JP5724713B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JP5724713B2 JP5724713B2 JP2011161025A JP2011161025A JP5724713B2 JP 5724713 B2 JP5724713 B2 JP 5724713B2 JP 2011161025 A JP2011161025 A JP 2011161025A JP 2011161025 A JP2011161025 A JP 2011161025A JP 5724713 B2 JP5724713 B2 JP 5724713B2
- Authority
- JP
- Japan
- Prior art keywords
- lid
- heat treatment
- treatment furnace
- furnace
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims description 128
- 238000004140 cleaning Methods 0.000 claims description 105
- 230000007246 mechanism Effects 0.000 claims description 99
- 239000002245 particle Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 91
- 239000007789 gas Substances 0.000 description 54
- 238000000034 method Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 24
- 238000012545 processing Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000002826 coolant Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 230000009471 action Effects 0.000 description 7
- 238000013459 approach Methods 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 7
- 230000003028 elevating effect Effects 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 7
- 238000009423 ventilation Methods 0.000 description 6
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
前記熱処理炉の下方側に位置するローディング室と、
このローディング室内に設けられ、熱処理炉内と熱処理炉の下方側との間で前記基板保持具を昇降させる保持具昇降機構と、
前記基板保持具が前記熱処理炉の下方側に位置しているときに、前記開口部を塞ぐ蓋体と、
前記蓋体を、前記開口部を塞ぐ位置と、前記開口部を開く位置との間で移動させる蓋体移動機構と、
前記ローディング室内に設けられ、前記蓋体が前記開口部を塞ぐ位置から外れているときに、当該蓋体の上面のパーティクルを吸引して除去するパーティクル除去機構と、
前記パーティクル除去機構を冷却する冷却機構と、を備えたことを特徴とする。
上述の図1〜図3に示す縦型熱処理装置を用い、パーティクルとして二酸化チタン(TiO2)の粉末を熱処理炉2内に強制的に付着させ、ウエハWへのパーティクルの付着状況について検証した。この際、熱処理炉2内に供給路2Aを介してN2ガスを供給する一方、熱処理炉2内を排気路2Bを介して排気して、熱処理炉内2の圧力を変え、実験を行った。また、パーティクルを蓋体61の上面に付着させた場合(実施例1−1)、ウエハボート3の底板32に付着させた場合(実施例1−2)、熱処理炉2の排気路2B内に付着させた場合(実施例1−3)について、夫々ウエハWのパーティクル数を測定した。
(実施例2)
図1に示す熱処理炉2において、熱処理炉2の内壁に形成された膜の累積膜厚が4μmとなったときに、当該熱処理炉2にクリーニングガスを供給して所定のクリーニング処理を行い、その後、蓋体61に付着したパーティクルの検証を行った。前記クリーニング処理は、第1のクリーニング処理と第2のクリーニング処理の2段階とした。第1のクリーニング処理では、クリーニングガスとしてフッ素(F2)ガスとフッ化水素(HF)ガスとを1:1の流量で供給し、圧力:150Torr(20kPa)、温度:300℃の下、240分間クリーニングを行った。また、第2のクリーニング処理では、クリーニングガスとしてフッ素ガスとフッ化水素ガスとを3:1の流量で供給すると共に、窒素(N2)ガスも供給し、3種のガスを合わせて3slmの流量で供給した。そして、圧力:150Torr(20kPa)、温度:475℃の下、80分間クリーニングを行った。
C FOUP
2 熱処理炉
3A,3B ウエボート
41 ボートエレベータ
6 蓋体開閉機構
61 蓋体
移動機構
7 クリーニングノズル
71 ノズル本体
72a 吸引孔
75 ノズル移動機構
口
Claims (4)
- 複数の基板が棚状に保持された基板保持具を縦型の熱処理炉内に、当該熱処理炉の下方側に形成された開口部から搬入し、基板に対して熱処理を行う装置において、
前記熱処理炉の下方側に位置するローディング室と、
このローディング室内に設けられ、熱処理炉内と熱処理炉の下方側との間で前記基板保持具を昇降させる保持具昇降機構と、
前記基板保持具が前記熱処理炉の下方側に位置しているときに、前記開口部を塞ぐ蓋体と、
前記蓋体を、前記開口部を塞ぐ位置と、前記開口部を開く位置との間で移動させる蓋体移動機構と、
前記ローディング室内に設けられ、前記蓋体が前記開口部を塞ぐ位置から外れているときに、当該蓋体の上面のパーティクルを吸引して除去するパーティクル除去機構と、
前記パーティクル除去機構を冷却する冷却機構と、を備えたことを特徴とする熱処理装置。 - 前記パーティクル除去機構は、前記蓋体の上面側の雰囲気を吸引するための吸引孔が形成されたクリーニングノズルを備えたことを特徴とする請求項1記載の熱処理装置。
- 前記パーティクル除去機構を前記蓋体に対して移動させる移動機構を備えたことを特徴とする請求項1または2に記載の熱処理装置。
- 前記パーティクル除去機構を蓋体に対して相対的に接離させる接離機構を備えることを特徴とする請求項1ないし3のいずれか一つに記載の熱処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011161025A JP5724713B2 (ja) | 2011-07-22 | 2011-07-22 | 熱処理装置 |
KR20120079183A KR101509858B1 (ko) | 2011-07-22 | 2012-07-20 | 열처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011161025A JP5724713B2 (ja) | 2011-07-22 | 2011-07-22 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013026504A JP2013026504A (ja) | 2013-02-04 |
JP5724713B2 true JP5724713B2 (ja) | 2015-05-27 |
Family
ID=47784475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011161025A Active JP5724713B2 (ja) | 2011-07-22 | 2011-07-22 | 熱処理装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5724713B2 (ja) |
KR (1) | KR101509858B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101390474B1 (ko) * | 2013-04-08 | 2014-05-07 | 주식회사 유진테크 | 기판처리장치 |
CN104342631B (zh) * | 2013-07-24 | 2016-12-07 | 广东先导稀材股份有限公司 | 化学气相沉积炉 |
JP6675948B2 (ja) * | 2016-08-03 | 2020-04-08 | 東京エレクトロン株式会社 | 蓋体及びこれを用いた基板処理装置 |
JP2019009370A (ja) * | 2017-06-28 | 2019-01-17 | 東京エレクトロン株式会社 | クリーニングノズル付蓋体、熱処理装置及び熱処理装置用蓋体のクリーニング方法 |
CN112011831B (zh) * | 2019-05-30 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 一种用于立式热处理炉的开关门组件及立式热处理炉 |
KR102564121B1 (ko) * | 2021-08-27 | 2023-08-08 | 주식회사 안머터리얼즈 | 다공성 물질의 제조를 위한 열팽창 반응기 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10189558A (ja) * | 1996-12-20 | 1998-07-21 | Sony Corp | 半導体装置製造装置用のクリーニング装置 |
JP2005093489A (ja) | 2003-09-12 | 2005-04-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
CN101914760B (zh) | 2003-09-19 | 2012-08-29 | 株式会社日立国际电气 | 半导体装置的制造方法及衬底处理装置 |
-
2011
- 2011-07-22 JP JP2011161025A patent/JP5724713B2/ja active Active
-
2012
- 2012-07-20 KR KR20120079183A patent/KR101509858B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2013026504A (ja) | 2013-02-04 |
KR101509858B1 (ko) | 2015-04-07 |
KR20130011969A (ko) | 2013-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5421825B2 (ja) | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 | |
JP4498362B2 (ja) | 基板処理装置および半導体デバイスの製造方法 | |
JP5724713B2 (ja) | 熱処理装置 | |
JP5625981B2 (ja) | 熱処理装置及び熱処理方法 | |
JP5048590B2 (ja) | 基板処理装置 | |
KR101155535B1 (ko) | 진공처리시스템 | |
JP2010219228A (ja) | 基板処理装置 | |
JP6294761B2 (ja) | 熱処理装置及び成膜システム | |
JP4005609B2 (ja) | 基板処理装置及び基板処理方法並びに基板の製造方法 | |
JP2007095879A (ja) | 基板処理装置 | |
JP2009200142A (ja) | 成膜装置および成膜方法 | |
JP2012138540A (ja) | 真空処理装置 | |
KR20110072354A (ko) | 기판처리시스템 및 그에 사용되는 세정모듈 | |
JP2015035583A (ja) | 熱処理装置及び成膜システム | |
JP2005268244A (ja) | 基板処理装置 | |
JP2005347667A (ja) | 半導体製造装置 | |
JP3856726B2 (ja) | 半導体製造装置 | |
JP3966884B2 (ja) | 基板処理装置及び基板処理方法並びに基板の製造方法 | |
JP4283973B2 (ja) | 基板処理装置および半導体装置の製造方法 | |
JP6345134B2 (ja) | 冷却装置及びこれを用いた熱処理装置、並びに冷却方法 | |
KR20120030917A (ko) | 진공처리장치 | |
JP7286847B1 (ja) | 成膜装置及び膜付きウェハの製造方法 | |
WO2024018986A1 (ja) | 基板処理装置および基板処理方法 | |
JP2005175068A (ja) | 基板処理装置 | |
KR20160149708A (ko) | 버퍼챔버를 이용한 건식 및 습식처리 시스템 및 이를 이용한 기판처리 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131210 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140723 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140819 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150303 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150316 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5724713 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |