CN108389798B - 刻蚀方法、低温多晶硅薄膜晶体管及amoled面板 - Google Patents
刻蚀方法、低温多晶硅薄膜晶体管及amoled面板 Download PDFInfo
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Abstract
本发明公开一种刻蚀方法、低温多晶硅薄膜晶体管及AMOLED面板。该刻蚀方法包括:向工艺腔室通入六氟化硫SF6和氧气O2对金属钼Mo层进行刻蚀,得到氟化钼MoFx;通入氯气Cl2和氧气O2对金属钼Mo层进行刻蚀,得到氯化钼MoClx;通入氟基刻蚀气体和氧气O2与所述MoClx反应,得到易挥发的氟氧化钼MoFxOy。本发明提供的方案,能减少干法刻蚀生成物的残留,解决AMOLED面板显示屏的显示异常现象。
Description
技术领域
本发明涉及平板显示技术领域,具体涉及一种刻蚀方法、低温多晶硅薄膜晶体管及AMOLED面板。
背景技术
AMOLED(Active Matrix Organic Light Emitting Diode,有源矩阵有机发光二极管)是新一代显示面板,相比于一般的液晶面板,具有响应速度快、无需背光源、对比度更高、整体结构轻薄、视角广阔以及柔性等优点,具有更为广阔的应用前景。
在AMOLED中,一般使用TFT(Thin Film Transistor,薄膜晶体管)进行驱动,而多晶硅(p-Si)薄膜具有远大于非晶硅(a-Si)、并与单晶硅可相比拟的高载流子迁移率,常代替非晶硅应用于TFT的有源层。目前平板显示器的多晶硅薄膜的衬底是难以承受高温工艺的玻璃,受此限制,业界一般都是使用LTPS(Low Temperature Poly-silicon,低温多晶硅)。
在LTPS-TFT(低温多晶硅薄膜晶体管)的工艺制程中,一般包括10道MASK(掩膜),相当于10个工序。在完成10道MASK(掩膜)之后,再经过OLED封装流程与真空蒸镀流程,最后得到AMOLED面板。其中,上述第二道MASK是制作栅极(Gate)层,该层用于形成TFT开关与电容。第二道MASK的过程包括:金属钼MO层成膜-成像-干法刻蚀-脱膜完成。其中,干法刻蚀是比较重要的一个工艺步骤。所谓刻蚀,是指用化学或物理方法有选择地从硅片表面去除不需要的材料的过程,刻蚀的基本目的是在涂胶(或有掩膜)的硅片上正确的复制出掩膜图形。干法刻蚀,是指利用气态中产生的等离子体,通过经光刻而开出的掩蔽层窗口,与暴露于等离子体中的硅片行物理和化学反应,刻蚀掉硅片上暴露的表面材料的一种工艺技术方法。
目前LTPS工艺制程中的干法刻蚀工艺,是采用SF6+O2及Cl2+O2来进行刻蚀。但是,经本发明研究人员发现,该干法刻蚀的生成物MoCl5的蒸气压比较低,在刻蚀中很容易沉积在薄膜上面造成残留,使得AMOLED面板的大板显示屏在点亮时出现了中间区域黑斑现象,同时伴随产生底部印迹点状Mura(斑点,统指显示器亮度不均匀、造成各种痕迹的现象)问题,从而造成产品良率下降,影响产品良率及性能。
发明内容
有鉴于此,本发明的目的在于提出一种刻蚀方法、低温多晶硅薄膜晶体管及AMOLED面板,能减少干法刻蚀生成物的残留,解决AMOLED面板显示屏的显示异常现象。
根据本发明的一个方面,提供一种刻蚀方法,包括:
向工艺腔室通入六氟化硫SF6和氧气O2对金属钼Mo层进行刻蚀,得到氟化钼MoFx;
通入氯气Cl2和氧气O2对金属钼Mo层进行刻蚀,得到氯化钼MoClx;
通入氟基刻蚀气体和氧气O2与所述MoClx反应,得到易挥发的氟氧化钼MoFxOy。
可选的,所述通入的氟基刻蚀气体包括:四氟化碳CF4、三氟甲烷CHF3、八氟环丁烷C4F8、六氟丁二烯C4F6或五氟乙烷C2HF5。
可选的,所述氟基刻蚀气体和氧气O2的比例范围为从2:1到4:1之间。
可选的,所述通入的氟基刻蚀气体和氧气O2中,所述氟基刻蚀气体的流量为200-2400 SCCM,所述氧气O2的流量为50-600 SCCM。
可选的,所述方法还包括:
降低所述工艺腔室底部温度,和/或,提高所述工艺腔室中部温度。
可选的,所述降低所述工艺腔室底部温度包括:将工艺腔室底部温度降低为70℃;
所述提高所述工艺腔室中部温度包括:将所述工艺腔室中部温度提高为100℃。
可选的,所述方法还包括:
调整氧气O2和氯气Cl2的比值。
可选的,所述调整氧气O2和氯气Cl2的比值包括:将通入的氧气O2与氯气Cl2的比值调整为1.35-5之间。
根据本发明的另一个方面,提供一种低温多晶硅薄膜晶体管,采用上述刻蚀方法制备得到。
根据本发明的另一个方面,提供一种AMOLED面板,包括低温多晶硅薄膜晶体管LTPS-TFT和有机发光二极管OLED,其中所述低温多晶硅薄膜晶体管采用上述刻蚀方法制备得到。
可以发现,本发明实施例的技术方案,在现有技术LTPS钼层工艺采用六氟化硫SF6+氧气O2及氯气Cl2+氧气O2刻蚀方法来对金属钼Mo层进行刻蚀的基础上,增加氟基刻蚀气体+氧气O2与前面刻蚀步骤产生的MoClx进行反应,得到易挥发的MoFxOy,该MoFxOy蒸气压比较高,很容易挥发,另外又可以使刻蚀中残留的氯气得以挥发掉,这样不仅能达到工艺要求,同时还可以对残留的MoClx进行有效处理,防止残留的MoClx导致大板显示屏点亮时产生黑斑和底部印迹点状Mura问题,从而解决了因钼层生成物MoClx造成大板显示屏异常的问题,提高了产品良率和产品性能。
进一步的,本发明实施例还可以调整工艺腔室温度,例如提高工艺腔室中部温度工艺使得可以进一步增强刻蚀反应生成物的挥发效果,及降低工艺腔室底部温度可以进一步避免因下部电极温度升高导致底部印迹点状Mura问题,实现更优化的效果。
进一步的,本发明实施例还可以通过增加氧气O2和氯气Cl2的比值,使得增加氧气后可以产生更多容易挥发的MoClxOy,可以更好的排出工艺腔室,进一步减少残留的MoClx;同时也可以提高工艺刻蚀腔室的洁净度。
附图说明
通过结合附图对本公开示例性实施方式进行更详细的描述,本公开的上述以及其它目的、特征和优势将变得更加明显,其中,在本公开示例性实施方式中,相同的参考标号通常代表相同部件。
图1是根据本发明的一个实施例的一种刻蚀方法的示意性流程图;
图2是根据本发明的一个实施例的一种刻蚀方法的另一示意性流程图;
图3是根据本发明的一个实施例的一种刻蚀方法的另一示意性流程图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,以下结合具体实施例,并参照附图,对本发明进一步详细说明。
虽然附图中显示了本公开的优选实施方式,然而应该理解,可以以各种形式实现本公开而不应被这里阐述的实施方式所限制。相反,提供这些实施方式是为了使本公开更加透彻和完整,并且能够将本公开的范围完整地传达给本领域的技术人员。
本发明提供一种刻蚀方法,能减少干法刻蚀生成物的残留,解决AMOLED面板显示屏的显示异常现象。
以下结合附图详细描述本发明实施例的技术方案。
图1是根据本发明的一个实施例的一种刻蚀方法的示意性流程图。该方法可以应用在低温多晶硅薄膜晶体管LTPS-TFT工艺制程的干法刻蚀阶段但不局限于此。
参照图1,所述方法包括:
在步骤101中,向工艺腔室通入六氟化硫SF6和氧气O2对金属钼Mo层进行刻蚀,得到氟化钼MoFx。
该步骤中,工艺腔室上部的电极功率可以设置为2000-10000W,工艺腔室下部的电极功率可以设置为200-5000W。通入的SF6流量可以为400-2000 SCC(流量单位),通入的O2流量可以为100-800 SCCM。其中,SF6和O2的比例可以设置为1:2。
通入SF6和O2后与Mo的反应过程包括:
Mo+SF6+O2:
Mo+6F*→MoF6↑
Mo+4F*+O*→MoF4O↑
Mo+5F→MoF5↑
常温下,MoF6沸点35℃。对于Mo的含氟化合物(如Mo的氟化物和Mo的氟氧化合物),氟含量越高,沸点越低,蒸汽压越高,越容易挥发去除。该反应过程的生成物蒸气压都比较高,很容易挥发从工艺腔室被抽走。
在步骤102中,通入氯气Cl2和氧气O2对金属钼Mo层进行刻蚀,得到氯化钼MoClx。
该步骤中,工艺腔室上部的电极功率可以设置为3000-10000W,工艺腔室下部的电极功率可以设置为500-5000W。通入的Cl2流量可以为400-2000 SCC(流量单位),通入的O2流量可以为200-900 SCCM。其中,Cl2和O2的比例可以设置为1.42:1。
通入Cl2和O2后与Mo的反应过程包括:
Mo+Cl2+O2:
Mo+2O+2Cl*→MoCl2O2↑
Mo+5Cl*→MoCl5↑
Mo+4Cl+O→MoCl4O↑
常温下,MoCl5沸点268℃。对于Mo的含氯化合物(如Mo的氯化物和Mo的氯氧化合物),氯含量越高,沸点越高,蒸汽压越低,越难以挥发去除。上述反应产生的氯化钼MoClx为MoCl5,MoCl5的蒸气压比较低,在刻蚀中很容易沉积在薄膜上面造成残留,也容易附着在工艺腔室内壁难以挥发完全。
在步骤103中,通入氟基刻蚀气体和氧气O2与所述MoClx反应,得到易挥发的氟氧化钼MoFxOy。
本发明实施例考虑到刻蚀工艺要求一定的均匀性、选择比、坡度角、线宽等因素,不更改原有刻蚀工艺,在原刻蚀工艺基础上增加刻蚀步骤,采用氟基刻蚀气体作为后处理气体与残余的MoClx例如MoCl5进行反应。
本发明实施例所说的氟基刻蚀气体,可以包括:四氟化碳CF4、三氟甲烷CHF3、八氟环丁烷C4F8、六氟丁二烯C4F6或五氟乙烷C2HF5等各种含F基(氟基)的气体。
其中,氟基刻蚀气体的流量可以为200-2400 SCCM,氧气O2的流量可以为50-600SCCM。氟基刻蚀气体和氧气O2的比例范围可以为从2:1到4:1之间;例如比例可以选4:1、3:1或者2:1等。
以下以氟基刻蚀气体为CF4举例说明但不局限于此,其中CF4与O2的比例可以为4:1、3:1或者2:1;CF4的流量可以为200-2400 SCCM,O2的流量可以为50-600 SCCM。
通入CF4+O2与残余的MoCl5的反应过程包括:
CF4→CFX ++CFY -+F-+F++F
O2→O*+O*
MoCl5+4F*+O*→MoFxOy
上述反应产生的MoFxOy,蒸气压比较高,很容易挥发,因此通过该新增刻蚀反应步骤,实现对残留的MoClx进行有效处理,防止残留的MoClx导致大板显示屏点亮时产生黑斑和底部印迹点状Mura问题;另外又可以使刻蚀中残留的氯气得以挥发。其中,上述MoFxOy中的x和y的取值为大于0的整数。
需说明的是,上述是以氟基刻蚀气体为CF4举例说明,其他例如三氟甲烷CHF3、八氟环丁烷C4F8、六氟丁二烯C4F6或五氟乙烷C2HF5等各种含F基的气体与残余的MoCl5的反应过程是类似的,都可以产生容易挥发的生成物,实现对残留的MoClx进行有效处理。
例如,通入CHF3+O2与残余的MoCl5的反应过程包括:
CHF3→CHFX *+CFX *+F*+H*
O2→O*+O*
CFX *+O2→CO+CO2+F*
F*+H*→HF
MoCl5+4F*+O*→MoFxOy
还需说明的是,本发明实施例新增刻蚀步骤所采用的后处理气体选用CF4+O2而不选用SF6+O2,主要是考虑以下原因:CF4比SF6有更好的选择比,可以避免因F离子过多造成衬底层SIN2被多刻蚀掉,导致出现在源漏极掺杂的时候,过多的能量掺杂到p-Si层,使得接触电阻过大,影响导电性能,进而对显示效果产生不良影响。
可以发现,本发明实施例的技术方案,在现有技术LTPS钼层工艺采用六氟化硫SF6+氧气O2及氯气Cl2+氧气O2刻蚀方法来对金属钼Mo层进行刻蚀的基础上,增加氟基刻蚀气体+氧气O2与前面刻蚀步骤产生的MoClx进行反应,得到易挥发的MoFxOy,该MoFxOy蒸气压比较高,很容易挥发,另外又可以使刻蚀中残留的氯气得以挥发掉,这样不仅能达到工艺要求,同时还可以对残留的MoClx进行有效处理,防止残留的MoClx导致大板显示屏点亮时产生黑斑和底部印迹点状Mura问题,从而解决了因钼层生成物MoClx造成大板显示屏异常的问题,提高了产品良率和产品性能。
图2是根据本发明的一个实施例的一种刻蚀方法的另一示意性流程图。
图2所示方法相对于图1增加了调整工艺腔室温度的处理,例如可以降低工艺腔室底部温度,提高工艺腔室中部温度工艺,保持腔室顶部温度不变,从而可以进一步增强刻蚀反应生成物的挥发效果,及进一步避免因下部电极温度升高导致底部印迹点状Mura问题。
参照图2,所述方法包括:
在步骤201中,向工艺腔室通入六氟化硫SF6和氧气O2对金属钼Mo层进行刻蚀,得到MoFx。
该步骤通入SF6和O2后与Mo的反应过程包括:
Mo+6F*→MoF6↑
Mo+4F*+O*→MoF4O↑
Mo+5F→MoF5↑
该反应过程的生成物蒸气压比较高,很容易从工艺腔室被抽走。
该步骤的具体内容可以参见图1步骤101描述,此处不再赘述。
在步骤202中,通入氯气Cl2和氧气O2对金属钼Mo层进行刻蚀,得到MoClx。
该步骤通入Cl2和O2后与Mo的反应过程包括:
Mo+2O+2Cl*→MoCl2O2↑
Mo+5Cl*→MoCl5↑
Mo+4Cl+O→MoCl4O↑
上述反应产生的MoCl5的蒸气压比较低,在刻蚀中很容易沉积在薄膜上面造成残留。
该步骤的具体内容可以参见图1步骤102描述,此处不再赘述。
在步骤203中,通入氟基刻蚀气体和氧气O2与所述MoClx反应,得到易挥发的MoFxOy。
该步骤通入CF4+O2与残余的MoCl5的反应过程包括:
CF4→CFX ++CFY -+F-+F++F
O2→O*+O*
MoCl5+4F*+O*→MoFxOy
上述反应产生的MoFxOy,蒸气压比较高,很容易挥发,因此通过该新增刻蚀步骤,实现对残留的MoClx进行有效处理,防止残留的MoClx导致大板显示屏点亮时产生黑斑和底部印迹点状Mura问题;另外又可以使刻蚀中残留的氯气得以挥发掉。
该步骤的具体内容可以参见图1步骤103描述,此处不再赘述。
在步骤204中,调整工艺腔室温度以促进所述MoClx挥发。
该步骤中的工艺腔室温度调整方案,可以是降低工艺腔室底部温度,和/或,提高工艺腔室中部温度。
也就是说,可以是同时降低工艺腔室底部温度,提高工艺腔室中部温度,工艺腔室顶部温度不变;也可以是只降低工艺腔室底部温度;或者是只提高工艺腔室中部温度;或同时提高工艺腔室中部温度和工艺腔室顶部温度等;具体可以根据实际需求选择不同调整方式。
其中,降低工艺腔室底部温度包括:将工艺腔室底部温度降低为70℃;提高工艺腔室中部温度包括:将工艺腔室中部温度提高为100℃。
现有技术中的工艺腔室的底部/中部/顶部的温度一般设置为80℃/80℃/80℃,本发明实施例将工艺腔室的底部/中部/顶部的温度调整修改为70℃/100℃/80℃。
该步骤中一方面提高工艺腔室中部温度,可以使工艺腔室内的反应生成物得以很好的挥发,例如使工艺腔室中部残留的MoCl5更好挥发,因为MoCl5的蒸气压比较低,在刻蚀中很容易沉积在薄膜上面造成残留,提高工艺腔室温度就可以促进MoCl5挥发;另一方面降低工艺腔室底部温度,也可以避免因下部电极温度升高导致大板底部印迹点状Mura问题。
需说明的是,工艺腔室的温度调整,可以是在刻蚀反应后进行设置,也可以是在刻蚀反应前提前设置好。
可以发现,本发明实施例的技术方案,通过氟基刻蚀气体+氧气O2与前面刻蚀步骤产生的MoClx进行反应,得到易挥发的MoFxOy,防止残留的MoClx导致大板显示屏点亮时产生黑斑和底部印迹点状Mura问题,从而解决了因钼层生成物MoClx造成大板显示屏异常的问题。并且,该实施例通过调整工艺腔室温度,例如提高工艺腔室中部温度工艺,使得可以进一步增强刻蚀反应生成物的挥发效果,及降低工艺腔室底部温度,可以进一步避免因下部电极温度升高导致底部印迹点状Mura问题,实现更优化的效果。
图3是根据本发明的一个实施例的一种刻蚀方法的另一示意性流程图。
图3所示方法相对于图2增加了调整氯气Cl2和氧气O2的比例的步骤,通过增加氧气O2与氯气Cl2的比值,从而产生更多的易挥发的MoClxOy,进一步实现对残留的MoClx进行有效处理。
参照图3,所述方法包括:
在步骤301中,向工艺腔室通入六氟化硫SF6和氧气O2对金属钼Mo层进行刻蚀,得到MoFx。
该步骤通入SF6和O2后与Mo的反应过程包括:
Mo+6F*→MoF6↑
Mo+4F*+O*→MoF4O↑
Mo+5F→MoF5↑
该反应过程的生成物蒸气压比较高,很容易从工艺腔室被抽走。
该步骤的具体内容可以参见图1步骤101描述,此处不再赘述。
在步骤302中,调整氧气O2和氯气Cl2的比值,按调整后的比值通入氯气Cl2和氧气O2对金属钼Mo层进行刻蚀,得到MoClx。
Cl2+O2与Mo的反应过程包括:
Mo+2O+2Cl*→MoCl2O2↑
Mo+5Cl*→MoCl5↑
Mo+4Cl+O→MoCl4O↑
该步骤中,先调整氧气O2和氯气Cl2的比值,包括:将通入的氧气O2与氯气Cl2的比值调整为1.35-5之间。
现有技术该刻蚀步骤中,O2与Cl2的原总气体量为800 SCCM,O2与Cl2的比值为1.285,本发明实施例调整O2与Cl2的总气体量为850 SCCM,并将O2与Cl2比值调整设置为1.35-5之间,其中较优选择可以是设置比值为1.4-2之间,例如可以设置比值为1.42。这样调整的目的是增加氧气后可以产生更多的MoClxOy,蒸气压比较高,从而可以更好的排出工艺腔室。
在步骤303中,通入氟基刻蚀气体和氧气O2与所述MoClx反应,得到易挥发的MoFxOy。
该步骤通入CF4+O2与残余的MoCl5的反应过程包括:
CF4→CFX ++CFY -+F-+F++F
O2→O*+O*
MoCl5+4F*+O*→MoFxOy
上述反应产生的MoFxOy,蒸气压比较高,很容易挥发,实现了对残留的MoClx进行有效处理,防止残留的MoClx导致大板显示屏点亮时产生黑斑和底部印迹点状Mura问题。
该步骤的具体内容可以参见图1步骤103描述,此处不再赘述。
在步骤304中,调整工艺腔室温度以促进所述MoClx挥发。
该步骤中的工艺腔室温度调整方案,可以是降低工艺腔室底部温度,和/或,提高工艺腔室中部温度。
该步骤的具体内容可以参见图2步骤204描述,此处不再赘述。
可以发现,本发明提供的方案,通过在原有刻蚀工艺后增加CF4+O2组合气体与前面刻蚀步骤产生的MoClx进行反应,得到易挥发的MoFxOy,防止残留的MoClx导致大板显示屏点亮时产生黑斑和底部印迹点状Mura问题;另外通过提高工艺腔室中间温度,可以进一步增强刻蚀反应生成物的挥发效果,及降低工艺腔室底部温度,可进一步避免因下部电极温度升高导致底部印迹点状Mura问题;还有,通过增加氧气O2和氯气Cl2的比值,使得增加氧气后可以产生更多的MoClxOy,可以更好的排出工艺腔室,进一步减少残留的MoClx;最后,上述处理方法还可同时提高工艺刻蚀腔室的洁净度。
需说明的是,该实施例方案是以同时包括增加CF4+O2与MoClx进行反应、调整第二步刻蚀中O2和Cl2的比值、调整工艺腔室温度以促进MoClx挥发3个处理方式举例说明,本发明实施例也可以只包含增加CF4+O2与MoClx进行反应、调整第二步刻蚀中O2和Cl2的比值两个处理方式,也即可以只包含步骤301-303。
本发明实施例还提供一种低温多晶硅薄膜晶体管,该低温多晶硅薄膜晶体管包括:基板、有源层、栅极绝缘层、栅极、层间绝缘层及源漏极,其中所述栅极(Gate)采用上述刻蚀方法制备得到。
本发明实施例还提供一种AMOLED面板,包括低温多晶硅薄膜晶体管LTPS-TFT和有机发光二极管OLED,其中所述低温多晶硅薄膜晶体管采用上述刻蚀方法制备得到。
因为本发明实施例是增加氟基刻蚀气体+氧气O2与前序刻蚀步骤产生的MoClx进行反应,得到易挥发的MoFxOy,就对残留的MoClx进行有效处理,因此本发明实施例的AMOLED面板,可以避免残留的MoClx导致大板显示屏点亮时产生黑斑和底部印迹点状Mura问题,不再因钼层生成物MoClx造成大板显示屏异常。
上文中已经参考附图详细描述了根据本发明的技术方案。
本领域的普通技术人员应当理解:以上所述仅为本发明的具体实施例而已,并不用于限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (7)
1.一种刻蚀方法,其特征在于,包括:
向工艺腔室通入六氟化硫SF6和氧气O2对金属钼Mo层进行刻蚀,得到氟化钼MoFx;
通入氯气Cl2和氧气O2对金属钼Mo层进行刻蚀,得到氯化钼MoClx;
通入氟基刻蚀气体和氧气O2与所述MoClx反应,得到易挥发的氟氧化钼MoFxOy;
所述氟基刻蚀气体和氧气O2的比例范围为从2:1到4:1之间;
所述通入的氟基刻蚀气体和氧气O2中,所述氟基刻蚀气体的流量为200-2400 SCCM,所述氧气O2的流量为50-600 SCCM;
所述方法还包括降低所述工艺腔室底部温度和提高所述工艺腔室中部温度。
2.根据权利要求1所述的方法,其特征在于:
所述通入的氟基刻蚀气体包括:四氟化碳CF4、三氟甲烷CHF3、八氟环丁烷C4F8、六氟丁二烯C4F6或五氟乙烷C2HF5。
3.根据权利要求1所述的方法,其特征在于:
所述降低所述工艺腔室底部温度包括:将工艺腔室底部温度降低为70℃;
所述提高所述工艺腔室中部温度包括:将所述工艺腔室中部温度提高为100℃。
4.根据权利要求1所述的方法,其特征在于,所述方法还包括:
调整氧气O2和氯气Cl2的比值。
5.根据权利要求4所述的方法,其特征在于:
所述调整氧气O2和氯气Cl2的比值包括:将通入的氧气O2与氯气Cl2的比值调整为1.35-5之间。
6.一种低温多晶硅薄膜晶体管,其特征在于,采用权利要求1至5中任一项所述的刻蚀方法制备得到。
7.一种AMOLED面板,其特征在于,包括低温多晶硅薄膜晶体管和有机发光二极管,其中所述低温多晶硅薄膜晶体管采用权利要求1至5中任一项所述的刻蚀方法制备得到。
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