CN107256873B - 阵列基板的制作方法及显示装置的制作方法 - Google Patents

阵列基板的制作方法及显示装置的制作方法 Download PDF

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CN107256873B
CN107256873B CN201710590258.5A CN201710590258A CN107256873B CN 107256873 B CN107256873 B CN 107256873B CN 201710590258 A CN201710590258 A CN 201710590258A CN 107256873 B CN107256873 B CN 107256873B
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CN107256873A (zh
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李海旭
曹占锋
姚琪
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BOE Technology Group Co Ltd
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Abstract

本发明提供一种阵列基板的制作方法和显示装置的制作方法，其包括：在平坦化层上依次形成电极层的整层膜层和金属功能层的整层膜层；利用多灰阶掩膜层使金属功能层的整层膜层形成电极层所需图案；对多灰阶掩膜层进行灰化处理；利用具有电极层所需图案的金属功能层使电极层的整层膜层形成电极层所需图案；利用经灰化处理后的多灰阶掩膜层使具有电极层所需图案的金属功能层形成金属功能层所需图案；还包括：在对多灰阶掩膜层进行灰化处理之前，在电极层的整层膜层的未被具有电极层所需图案的金属功能层覆盖的部分之上形成绝缘保护层。本发明提供的阵列基板的制作方法，可以保证膜层的性质与产品特性，以及保证工艺顺利并安全的进行。

Description

阵列基板的制作方法及显示装置的制作方法
技术领域
本发明涉及显示技术领域，具体地，涉及一种阵列基板的制作方法及显示装置的制作方法。
背景技术
薄膜晶体管(TFT)是有源矩阵液晶显示屏(AMLCD)和有源矩阵有机发光二极管(AMOLED)显示屏的像素驱动部件，在实现大尺寸、高清晰度、高帧频率的显示中起着重要作用。目前TFT的有源层材料主要有氢化非晶硅、低温多晶硅、有机半导体和氧化物半导体，其中，氧化物半导体具有较高的电子迁移率和好的均匀性，适用于驱动AMLCD和AMOLED。为了实现高分辨率显示，TFT器件尺寸需要实现“小型化”，而实现背沟道刻蚀(BCE)结构是TFT器件尺寸“小型化”的关键。
在BCE结构中，为了减少电容串扰并降低功耗，通常在源极和漏极与电极层(像素电极或公共电极)之间增设有平坦化层。此外，电路设计中为了达到一定存储电容，会在电极层之上增加金属功能层。在制作这种结构的阵列基板的过程中，在进行电极层与金属功能层的刻蚀时，一般会选用HTM(Half tone工艺)工艺同时刻蚀电极层与金属功能层，以降低成本。而HTM工艺涉及一步灰化工序，即，在利用多灰阶掩膜层使金属功能层的整层膜层形成电极层所需图案之后，需要对该多灰阶掩膜层进行灰化处理；然后，利用经灰化处理后的多灰阶掩膜层使金属功能层的整层膜层形成金属功能层所需图案。
但是，由于灰化气体为氧气，在进行灰化处理时氧气被电离会产生大量的电荷。大量电荷在遇到电极层的整层膜层(ITO)之后极易产生电荷的聚集现象，从而在整层膜层的表面产生电弧放电，进而会影响膜层的性质与产品特性，严重时还会对设备产生损坏。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种阵列基板的制作方法及显示装置的制作方法，其可以保证膜层的性质与产品特性，以及保证工艺顺利并安全的进行。
为实现本发明的目的而提供一种阵列基板的制作方法，包括：
在平坦化层上依次形成电极层的整层膜层和金属功能层的整层膜层；
利用多灰阶掩膜层使所述金属功能层的整层膜层形成所述电极层所需图案；
对所述多灰阶掩膜层进行灰化处理；
利用具有所述电极层所需图案的所述金属功能层使所述电极层的整层膜层形成所述电极层所需图案；
利用经灰化处理后的所述多灰阶掩膜层使具有所述电极层所需图案的所述金属功能层形成所述金属功能层所需图案；
还包括：
在所述对所述多灰阶掩膜层进行灰化处理之前，在所述电极层的整层膜层的未被具有所述电极层所需图案的所述金属功能层覆盖的部分之上形成绝缘保护层。
优选的，所述绝缘保护层的形成包括：
在所述平坦化层上依次形成所述电极层的整层膜层、金属层的整层膜层和所述金属功能层的整层膜层；
利用所述多灰阶掩膜层使所述金属功能层的整层膜层形成所述电极层所需图案；
对所述金属层的整层膜层的未被具有所述电极层所需图案的所述金属功能层覆盖的部分进行氧化处理，获得透明、且绝缘的金属氧化层用作所述绝缘保护层。
优选的，所述金属层包括铝。
优选的，所述金属层的厚度在
Figure BDA0001354546640000031
。
优选的，采用磁控溅射方法沉积所述金属层的整层膜层。
优选的，采用离子注入设备对所述金属层的整层膜层的未被具有所述电极层所需图案的所述金属功能层覆盖的部分进行氧化处理。
优选的，在对所述金属层的整层膜层的未被具有所述电极层所需图案的所述金属功能层覆盖的部分进行氧化处理，获得透明、且绝缘的金属氧化层用作所述绝缘保护层之后，包括：
对所述多灰阶掩膜层进行灰化处理；
利用具有所述电极层所需图案的所述金属功能层同时去除所述金属氧化层，和所述电极层的整层膜层的未被所述金属功能层覆盖的部分，从而形成所述电极层所需图案；
利用经灰化处理后的所述多灰阶掩膜层使具有所述电极层所需图案的所述金属功能层形成所述金属功能层所需图案。
优选的，所述利用所述多灰阶掩膜层使所述金属功能层的整层膜层形成所述电极层所需图案，进一步包括：
在所述金属功能层的整层膜层上涂光刻胶层；
采用多灰阶掩膜版对光刻胶层进行曝光，以在所述金属功能层的整层膜层上形成具有所述电极层所需图案的所述多灰阶掩膜层；
去除所述金属功能层的整层膜层的未被所述多灰阶掩膜层覆盖的部分。
优选的，所述金属功能层包括Mo。
优选的，所述电极层包括ITO。
优选的在平坦化层上依次形成电极层的整层膜层和金属功能层的整层膜层之前，还包括：
提供一基板；
在所述基板上依次形成栅极、栅绝缘层、有源层、源极和漏极、钝化层和平坦化层。
作为另一个技术方案，本发明还提供一种显示装置的制作方法，其包括本发明提供的上述阵列基板的制作方法。
本发明具有以下有益效果：
本发明提供的阵列基板的制作方法，其在对多灰阶掩膜层进行灰化处理之前，在电极层的整层膜层的未被具有电极层所需图案的金属功能层覆盖的部分形成绝缘保护层，该绝缘保护层可以在进行灰化处理时，有效避免电弧放电现象，从而可以保证膜层的性质与产品特性，以及保证工艺顺利并安全的进行。
本发明提供的显示装置的制作方法，其通过采用本发明提供的上述阵列基板的制作方法，可以保证膜层的性质与产品特性，以及保证工艺顺利并安全的进行。
附图说明
图1A为本发明第一实施例提供的阵列基板的制作方法的第1步骤的过程图；
图1B为本发明第一实施例提供的阵列基板的制作方法的第2步骤的过程图；
图1C为本发明第一实施例提供的阵列基板的制作方法的第3步骤的过程图；
图1D为本发明第一实施例提供的阵列基板的制作方法的第4步骤的过程图；
图1E为本发明第一实施例提供的阵列基板的制作方法的第5步骤的过程图；
图1F为本发明第一实施例提供的阵列基板的制作方法的第6步骤的过程图；
图2A为本发明第一实施例提供的阵列基板的制作方法的第1步骤的过程图；
图2B为本发明第二实施例提供的阵列基板的制作方法的第2步骤的过程图；
图2C为本发明第二实施例提供的阵列基板的制作方法的第3步骤的过程图；
图2D为本发明第二实施例提供的阵列基板的制作方法的第4步骤的过程图；
图2E为本发明第二实施例提供的阵列基板的制作方法的第5步骤的过程图；
图2F为本发明第二实施例提供的阵列基板的制作方法的第6步骤的过程图；
图2G为本发明第二实施例提供的阵列基板的制作方法的第7步骤的过程图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的阵列基板的制作方法及显示装置的制作方法进行详细描述。
请一并参阅图1A～图1F，本发明第一实施例提供一种阵列基板的制作方法，其包括：
步骤101、在平坦化层1上依次形成电极层的整层膜层2和金属功能层的整层膜层3，如图1A所示。
上述电极层根据具体需要可以为像素电极或者公共电极，该电极层的整层膜层2通常采用ITO材料制作。
上述金属功能层(通常称Matel 3或者第三种金属层)，其通常在电路设计中为了达到一定存储电容而存在。该金属功能层可以采用Mo等金属材料制作。
步骤102、利用多灰阶掩膜层4使金属功能层的整层膜层3形成具有电极层所需图案的金属功能层3a，如图1B所示。
上述多灰阶掩膜层4通常包括光刻胶完全保留区、光刻胶部分保留区和光刻胶去除区，其中，光刻胶去除区对应的图案即为上述电极层所需图案。多灰阶掩膜层4通常采用光刻胶材料制作。
在上述步骤102中，通过刻蚀金属功能层的整层膜层3的未被多灰阶掩膜层4覆盖的部分，即，对应多灰阶掩膜层4的光刻胶去除区的部分，最终可以使金属功能层的整层膜层3形成电极层所需图案。
步骤103、在电极层的整层膜层2的未被具有电极层所需图案的金属功能层3a覆盖的部分之上形成绝缘保护层5a，即，在电极层的整层膜层2的所有的未被金属功能层3a覆盖的暴露区域上覆盖绝缘保护层5a，如图1C所示。
步骤104、对上述多灰阶掩膜层4进行灰化处理，如图1D所示。
通过灰化处理，以去除多灰阶掩膜层4的光刻胶部分保留区的光刻胶，并减薄光刻胶完全保留区的光刻胶的厚度，从而获得具有金属功能层所需图案的多灰阶掩膜层4a。
步骤105、利用具有电极层所需图案的金属功能层3a使电极层的整层膜层2形成具有电极层所需图案的电极层2a，如图1E所示。
在上述步骤105中，可以同时或者先后刻蚀绝缘保护层5a和电极层的整层膜层2的未被金属功能层3a覆盖的部分。
步骤106、利用经灰化处理后的多灰阶掩膜层4a使具有电极层所需图案的金属功能层3a形成具有金属功能层所需图案的金属功能层3b，如图1F所示。
在上述步骤106中，通过刻蚀金属功能层3a未被多灰阶掩膜层4a覆盖部分，可以获得具有金属功能层所需图案的金属功能层3b。
综上所述，通过在对多灰阶掩膜层4进行灰化处理(步骤104)之前，在电极层的整层膜层2的未被具有电极层所需图案的金属功能层3a覆盖的部分之上形成绝缘保护层5a(步骤103)，该绝缘保护层5a可以在进行灰化处理时，有效避免电弧放电现象，从而可以保证膜层的性质与产品特性，以及保证工艺顺利并安全的进行。
需要说明的是，在实际应用中，在平坦化层1上依次形成电极层的整层膜层2和金属功能层的整层膜层3之前，还包括：
提供一基板；
在该基板上依次形成栅极、栅绝缘层、有源层、源极和漏极、钝化层和平坦化层1。
上述基板、栅极、栅绝缘层、有源层、源极和漏极和钝化层属于阵列基板的常规设置，未在图中示出，且在此不进行详细描述。当然，在实际应用中，可以根据具体需要增减任意功能膜层。
请一并参阅图2A～2G，本发明第二实施例提供的阵列基板的制作方法，其在上述第一实施例的基础上，包含了对绝缘保护层5a的形成提出的一个具体实施方式。
具体地，上述绝缘保护层5a的形成包括：
步骤201、在平坦化层1上依次形成电极层的整层膜层2和金属层的整层膜层5，如图2A所示。
上述金属层包括铝。而且，该金属层的厚度在
Figure BDA0001354546640000071
。此外，可以采用磁控溅射方法沉积金属层的整层膜层5。
步骤202、在金属层的整层膜层5上形成金属功能层的整层膜层3，如图2B所示。
步骤203、利用多灰阶掩膜层4使金属功能层的整层膜层3形成具有电极层所需图案的金属功能层3a，如图2D所示。
上述步骤203具体可以包括：
步骤2031、在金属功能层的整层膜层3上涂光刻胶层；
步骤2032、采用多灰阶掩膜版对上述光刻胶层进行曝光，以金属功能层的整层膜层3上形成具有电极层所需图案的多灰阶掩膜层4，如图2C所示。
步骤2033、去除金属功能层的整层膜层3的未被多灰阶掩膜层4覆盖的部分，以获得具有电极层所需图案的金属功能层3a，如图2D所示。
步骤204、对金属层的整层膜层5的未被具有电极层所需图案的金属功能层3a覆盖的部分进行氧化处理，获得透明、且绝缘的金属氧化层用作所述绝缘保护层5a，如图2D所示。而金属层的整层膜层5的被具有电极层所需图案的金属功能层3a覆盖的部分5b仍然为金属材料。
例如，对于铝的金属层，通过上述氧化处理可以获得透明、且绝缘的三氧化二铝。
优选的，采用离子注入设备对金属层的整层膜层5的未被具有电极层所需图案的金属功能层3a覆盖的部分进行氧化处理。该离子注入设备能够产生氧离子，氧离子通过设置在金属层上方的电极板的加速作用，自金属层上方掺杂入该金属层中。
步骤205、对多灰阶掩膜层4进行灰化处理，如图2E所示。
通过灰化处理，以去除多灰阶掩膜层4的光刻胶部分保留区的光刻胶，并减薄光刻胶完全保留区的光刻胶的厚度，从而获得具有金属功能层所需图案的多灰阶掩膜层4a。
步骤206、利用具有电极层所需图案的金属功能层3a去除上述绝缘保护层5a，而仅保留金属层的整层膜层5的被具有电极层所需图案的金属功能层3a覆盖的部分5b；同时，去除电极层的整层膜层2的未被金属功能层覆盖的部分，从而形成具有电极层所需图案的电极层2a，如图2F所示。
由于绝缘保护层5a的厚度较薄(
Figure BDA0001354546640000081
)，同时刻蚀绝缘保护层5a和电极层的整层膜层2的未被金属功能层覆盖的部分对ITO材料的电极层的形貌产生的影响较小。尤其对于氧化铝材料的绝缘保护层5a，对ITO材料的电极层的形貌产生的影响更小。
步骤207、利用经灰化处理后的多灰阶掩膜层4a使具有电极层所需图案的金属功能层3a形成具有金属功能层所需图案的金属功能层3b，如图2G所示。
作为另一个技术方案，本发明还提供一种显示装置的制作方法，其包括本发明上述各个实施例提供的阵列基板的制作方法。
本发明实施例提供的显示装置的制作方法，其通过采用本发明上述各个实施例提供的阵列基板的制作方法，可以保证膜层的性质与产品特性，以及保证工艺顺利并安全的进行。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (11)

1.一种阵列基板的制作方法，其特征在于，包括：
在平坦化层上依次形成电极层的整层膜层、金属层的整层膜层和金属功能层的整层膜层；
利用多灰阶掩膜层使所述金属功能层的整层膜层形成所述电极层所需图案；
对所述金属层的整层膜层的未被具有所述电极层所需图案的所述金属功能层覆盖的部分进行氧化处理，获得透明、且绝缘的金属氧化层用作绝缘保护层；
对所述多灰阶掩膜层进行灰化处理；
利用具有所述电极层所需图案的所述金属功能层使所述电极层的整层膜层形成所述电极层所需图案；
利用经灰化处理后的所述多灰阶掩膜层使具有所述电极层所需图案的所述金属功能层形成所述金属功能层所需图案。
2.根据权利要求1所述的阵列基板的制作方法，其特征在于，所述金属层包括铝。
3.根据权利要求1所述的阵列基板的制作方法，其特征在于，所述金属层的厚度在
Figure FDA0002406458950000011
4.根据权利要求1所述的阵列基板的制作方法，其特征在于，采用磁控溅射方法沉积所述金属层的整层膜层。
5.根据权利要求1所述的阵列基板的制作方法，其特征在于，采用离子注入设备对所述金属层的整层膜层的未被具有所述电极层所需图案的所述金属功能层覆盖的部分进行氧化处理。
6.根据权利要求1所述的阵列基板的制作方法，其特征在于，在对所述金属层的整层膜层的未被具有所述电极层所需图案的所述金属功能层覆盖的部分进行氧化处理，获得透明、且绝缘的金属氧化层用作所述绝缘保护层之后，包括：
对所述多灰阶掩膜层进行灰化处理；
利用具有所述电极层所需图案的所述金属功能层同时去除所述金属氧化层，和所述电极层的整层膜层的未被所述金属功能层覆盖的部分，从而形成所述电极层所需图案；
利用经灰化处理后的所述多灰阶掩膜层使具有所述电极层所需图案的所述金属功能层形成所述金属功能层所需图案。
7.根据权利要求1所述的阵列基板的制作方法，其特征在于，所述利用所述多灰阶掩膜层使所述金属功能层的整层膜层形成所述电极层所需图案，进一步包括：
在所述金属功能层的整层膜层上涂光刻胶层；
采用多灰阶掩膜版对光刻胶层进行曝光，以在所述金属功能层的整层膜层上形成具有所述电极层所需图案的所述多灰阶掩膜层；
去除所述金属功能层的整层膜层的未被所述多灰阶掩膜层覆盖的部分。
8.根据权利要求1所述的阵列基板的制作方法，其特征在于，所述金属功能层包括Mo。
9.根据权利要求1所述的阵列基板的制作方法，其特征在于，所述电极层包括ITO。
10.根据权利要求1所述的阵列基板的制作方法，其特征在于，在平坦化层上依次形成电极层的整层膜层、金属层的整层膜层和金属功能层的整层膜层之前，还包括：
提供一基板；
在所述基板上依次形成栅极、栅绝缘层、有源层、源极和漏极、钝化层和平坦化层。
11.一种显示装置的制作方法，其特征在于，包括权利要求1-10任意一项所述的阵列基板的制作方法。
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