CN103715096A - 薄膜晶体管及其制作方法、阵列基板及其制作方法 - Google Patents
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Abstract
本发明涉及显示装置的制造领域,具体涉及一种薄膜晶体管及其制作方法、包括该薄膜晶体管的阵列基板及其制作方法;该薄膜晶体管的制作方法包括以下步骤:S1形成有源层和源漏电极层,并在源漏电极层上形成光刻胶层,并通过构图工艺形成光刻胶层的图案;S2利用所述光刻胶图案作为掩模对源漏电极层进行刻蚀,形成包括源极和漏极的源漏电极层的图案;S3将光刻胶剥离后,再利用源漏电极层的图案作为掩模对有源层进行刻蚀,形成有源层的图案。本发明能够利用源漏电极层的图案作为掩模,对有源层进行刻蚀,可针对性地防止和减少薄膜晶体管有源层源漏极之间区域的有机物的污染,提高薄膜晶体管的电学性能。
Description
技术领域
本发明涉及显示技术领域,特别涉及一种薄膜晶体管及其制作方法、阵列基板及其制作方法。
背景技术
目前设计的非晶硅TFT-LCD(Thin Film Transistor-Liquid Crystaldisplays,薄膜晶体管-液晶显示器)各类产品,采用背沟道刻蚀技术。
目前,薄膜晶体管制作方法通常包括:在衬底基板1上形成包括栅极2的栅极层图形,形成栅极绝缘层3,在栅极绝缘层3上依次形成有源层4,源漏电极层5和光刻胶层6,其中有源层可以包括半导体层41和欧姆接触层(掺杂半导体层)42(如图1所示)。利用灰阶掩模板或半阶掩模板对涂覆有光刻胶层6的基板曝光、显影,显影后,形成光刻胶保留区61、光刻胶半保留区62和光刻胶去除区63(如图2所示)。进行第一次刻蚀,光刻胶去除区内的源漏电极层和有源层没有光刻胶保护而被刻蚀(如图3所示);进行灰化处理,光刻胶半保留区62的光刻胶被去除,光刻胶保留区61的光刻胶被减薄(如图4所示),进行第二刻蚀,先刻蚀掉光刻胶半保留区的源漏电极层,形成源极51和漏极52,再刻蚀掉源极51和漏极52之间区域的部分有源层4,有源层中的掺杂半导体层42全部被刻蚀掉(如图5所示),最后剥离光刻胶(如图6所示)。
现有的形成源漏电极和有源层图形的构图工艺是在光刻胶涂覆后,进行曝光显影,利用光刻胶的图形的作为掩模,来进行源漏电极层和有源层的刻蚀,以形成所需的图案。在刻蚀的过程中,光刻胶内的有机物或者其他物质会被轰击和扩散到薄膜晶体管内源极和漏极之间区域的有源层内,所述区域的有源层膜质受到有机物及其他物质的污染,会导致薄膜晶体管的性能下降。
为了解决以上问题,本发明做了有益改进。
发明内容
(一)要解决的技术问题
本发明的目的是提供一种薄膜晶体管及其制作方法,包括该薄膜晶体管的阵列基板及其制作方法,能够防止和减少有源层上位于源极和漏极之间区域的有机物污染,提高薄膜晶体管的性能。
(二)技术方案
本发明是通过以下技术方案实现的:一种薄膜晶体管的制作方法,包括以下步骤:
S1形成有源层和源漏电极层,并在源漏电极层上形成光刻胶层,并通过构图工艺形成光刻胶层的图案;
S2利用所述光刻胶图案作为掩模对源漏电极层进行刻蚀,形成包括源极和漏极的源漏电极层的图案;
S3将光刻胶剥离后,再利用源漏电极层的图案作为掩模对有源层进行刻蚀,形成有源层的图案。
进一步,步骤S1中,所述光刻胶层为正性光刻胶;所述构图工艺包括利用灰阶掩模板或半阶掩模板对涂覆有光刻胶层的基板曝光、显影;再形成光刻胶保留区、光刻胶半保留区和光刻胶去除区。
再进一步,步骤S2中,包括以下步骤:
进行第一次刻蚀,光刻胶去除区内的源漏电极层和有源层被刻蚀;进行灰化处理,光刻胶半保留区的光刻胶被去除,光刻胶保留区的光刻胶被减薄;
进行第二次刻蚀,先刻蚀掉光刻胶半保留区的源漏电极层,形成源极和漏极。
其中,步骤S2所述对源漏电极层进行刻蚀采用湿法刻蚀工艺。
其中,在步骤S3对有源层进行刻蚀采用干法刻蚀工艺。
进一步,所述干法刻蚀工艺为利用化学气体等离子轰击所述有源层。
其中,在步骤3中,所述有源层包括半导体有源层和欧姆接触层,所述“对有源层进行刻蚀”步骤包括刻蚀掉所述源极和所述漏极之间区域的欧姆接触层。
进一步,所述制作方法还包括:
形成栅极层,通过一次构图工艺形成包括栅极的栅极层图案;
形成栅极绝缘层。
本发明还提供一种薄膜晶体管,包括栅极、栅极绝缘层、有源层和漏极、漏极,所述薄膜晶体管采用如上所述的制作方法制备,所述有源层未被污染。
本发明还提供一种阵列基板,所述阵列基板包括如上所述的薄膜晶体管。
本发明还提供一种如上所述的阵列基板的制作方法,所述制作方法包括:
形成栅极层,通过一次构图工艺形成包括栅极、栅线的栅极层图案;
形成栅极绝缘层;
形成有源层和源漏电极层,并在源漏电极层上形成光刻胶层,并通过构图工艺形成光刻胶层的图案;利用所述光刻胶图案作为掩模对源漏电极层进行刻蚀,形成包括源极、漏极、数据线的源漏电极层的图案,剥离光刻胶;
形成像素电极层,并通过构图工艺形成包括像素电极的像素电极层的图案;所述像素电极与所述漏极直接接触连接;
利用源漏电极层的图案作为掩模对有源层进行刻蚀,形成有源层的图案。
(三)有益效果
与现有技术和产品相比,本发明有如下优点:
1、本发明利用源漏电极层的图案为掩模,对有源层进行刻蚀,形成有源层图案,可针对性地防止和减少有源层上位于源极和漏极之间区域的有机物污染,提高薄膜晶体管的电学性能;
2、本发明提供的阵列基板制造方法,降低或防止薄膜晶体管的有源层的源漏电极之间区域遭受有机物污染,提高了阵列基板上薄膜晶体管的电学性能。
附图说明
图1是现有TFT制作过程中器件结构示意图一;
图2是现有TFT制作过程中器件结构示意图二;
图3是现有TFT制作过程中器件结构示意图三;
图4是现有TFT制作过程中器件结构示意图四;
图5是现有TFT制作过程中器件结构示意图五;
图6是现有TFT制作过程中器件结构示意图六;
图7是本发明的TFT制作过程中器件结构示意图一;
图8是本发明的TFT制作过程中器件结构示意图二;
图9是本发明的TFT制作过程中器件结构示意图三;
图10是本发明的TFT制作步骤框图;
图11是本发明的阵列基板的制作过程图。
具体实施方式
下面结合附图对本发明的具体实施方式做一个详细的说明。
如图10所示,本实施例提供一种薄膜晶体管的制作方法,包括以下步骤:
S1形成有源层和源漏电极层,并在源漏电极层上形成光刻胶层,并通过构图工艺形成光刻胶层的图案;
进一步,所述光刻胶层为正性光刻胶,
具体地,制作薄膜晶体管的过程中,栅极层和源漏电极层采用金属等导电材料,有源层采用非晶硅(a-Si)制成。栅极层和源漏电极层可以采用磁控溅射方法形成,有源层可以采用化学气相沉积方法形成。在该步骤中,所述光刻胶层为正性光刻胶,所述构图工艺包括利用灰阶掩模板或半阶掩模板对涂覆有光刻胶层的基板曝光、显影,显影后,形成光刻胶保留区、光刻胶半保留区和光刻胶去除区。
S2利用所述光刻胶6图案作为掩模对源漏电极层进行刻蚀,形成包括源极51和漏极52的源漏电极层的图案(如图7所示);
优选地,在刻蚀过程中采用湿法刻蚀工艺。
具体包括以下步骤:
进行第一次刻蚀,光刻胶去除区内的源漏电极层和有源层没有光刻胶保护而被刻蚀;进行灰化处理,光刻胶半保留区的光刻胶被去除,光刻胶保留区的光刻胶被减薄;
进行第二次刻蚀,先刻蚀掉光刻胶半保留区的源漏电极层,形成源极51和漏极52。
S3将光刻胶6剥离后(如图8所示),再利用源漏电极层的图案作为掩模对有源层4进行刻蚀,形成有源层4的图案(如图9所示)。
优选地,在该步骤中,对有源层进行刻蚀采用干法刻蚀工艺。干法刻蚀工艺是利用真空气体在射频功率的作为下产生气体等离子体进行反应产生原子和原子团,该原子和原子团与沉积在基板上的物质反应生成挥发性物质,利用该原理对物质进行刻蚀的方法为干法刻蚀。进一步,所述干法刻蚀工艺为利用化学气体等离子轰击所述有源层。因干法刻蚀工艺所用化学气体,只对非金属膜层刻蚀,对金属层没有影响,保证了刻蚀精度。
在步骤S3中,所述有源层4包括半导体层41和欧姆接触层42,源漏极之间区域的欧姆接触层42需要完全刻蚀,理论上半导体层(非晶硅层)是不需要刻蚀的。在实际工艺中,为保证欧姆接触层42完全被刻蚀,保证薄膜晶体管形成,半导体层也需要被部分刻蚀。具体地,所述“对有源层进行刻蚀”步骤包括刻蚀掉所述源极51和所述漏极52之间区域的欧姆接触层42。
上述的薄膜晶体管的制作方法,将光刻胶剥离后,再利用源漏电极层的图案作为掩模对有源层进行刻蚀,形成有源层的图案。有源层上的源漏极之间区域采用化学气体等离子轰击有源层进行刻蚀。这样,在刻蚀的过程中,由于光刻胶材料已经被剥离,就不存在光刻胶材料被轰击和扩散到源漏极之间区域的有源层7内的问题,避免影响到薄膜晶体管的特性。可见该薄膜晶体管的制作方法防止和减少了有源层上源漏极之间区域的有机物污染,从而达到实现薄膜晶体管性能提升的目的。
进一步,所述制作方法在所述步骤S1之前还包括以下步骤:
如图7、图8和图9所示,在衬底基板1上形成栅极层2,通过一次构图工艺形成包括栅极2的栅极层图案;再形成栅极绝缘层3。所述的构图工艺可以包括光刻胶涂覆、曝光、显影、刻蚀、光刻胶剥离。
本实施例还提供一种薄膜晶体管,包括栅极、栅极绝缘层、有源层和漏极、漏极,所述薄膜晶体管采用如上所述的制作方法制备,所述有源层未被污染。
本实施例还提供一种阵列基板,包括如上所述的薄膜晶体管。
本实施例还提供一种阵列基板的制作方法,能够解决新工艺流程的有源层上源漏电极之间区域的污染问题。
现有的ADS型(Advanced Super Dimension Switch,高级超维场转换技术)液晶面板,就是利用处于同一平面内的电极产生的横向电场使液晶产生偏转来实现图像显示的模式通过该技术,可提高液晶面板的开口率和透过率。ADS型液晶显示器中的阵列基板将透明像素电极层设置在阵列基板源漏电极层之上,像素电极与阵列基板上薄膜晶体管的漏极直接接触,而不是通过钝化层的过孔连接。ADS型液晶面板的阵列基板还包括公共电极层,公共电极层可以设置在像素电极层下方,也可以设置在像素电极层上方。公共电极层和像素电极层通常采用透明导电材料,例如氧化铟锡(ITO)。现有技术中,对于ADS型液晶显示器,其上的阵列基板的制作过程中,在形成源漏电极层后继续形成像素电极层,然后通过一次构图工艺形成像素电极层图案、源漏电极层的图案和有源层的图案,各层图案制作过程中也存在将像素电极层材料,例如ITO,轰击到源漏电极之间区域的有源层,造成有源层上源漏电极之间区域的有源层污染的问题。
为了解决上述的技术问题,本实施例提供的阵列基板的制作方法,如图11所示,包括以下步骤:
S100形成栅极层,再通过一次构图工艺形成包括栅极、栅线的栅极层图案;
所述构图工艺包括:在栅极层上涂覆光刻胶、曝光、显影,再对栅极层进行光刻,再去除光刻胶。
S200形成栅极绝缘层;
S300形成有源层和源漏电极层,并在源漏电极层上形成光刻胶层,并通过构图工艺形成光刻胶层的图案;利用所述光刻胶图案作为掩模对源漏电极层进行刻蚀,形成包括源极、漏极、数据线的源漏电极层的图案,剥离光刻胶;
S400形成像素电极层,通过一次构图工艺形成包括像素电极的像素电极层图案,所述像素电极与所述漏极直接接触连接。
所述构图工艺可包括:在像素电极层上涂覆光刻胶、曝光、显影,再对像素电极层进行刻蚀,最后去除光刻胶。
S500再利用源漏电极层的图案作为掩模对有源层进行刻蚀,形成有源层的图案。
上述阵列基板的制作方法,在形成源漏电极层后,并未形成像素电极层且通过一次构图工艺形成像素电极层图案、源漏电极层的图案和有源层的图案,而是在步骤S300中对源漏电极层进行刻蚀,形成包括源极、漏极、数据线的源漏电极层的图案,并去除光刻胶,在源漏电极层表面形成包括像素电极的像素电极层图案;然后,再利用源漏电极层的图案作为掩模,对有源层进行刻蚀,形成有源层的图案。这样的制作过程中,如果在像素电极层的形成过程中,使像素电极层的ITO材料或光刻胶的有机材料被轰击到有源层上源漏电极之间的区域中,那么在之后的步骤S500中利用源漏电极层的图案作为掩模对有源层进行刻蚀,则可将被ITO材料或有机材料渗透的位于源漏电极之间的区域的有源层刻蚀,避免了ITO材料或有机材料对有源层的污染,保证了薄膜晶体管的电学性能。
以上实施方式仅用于说明本发明,而并非对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由权利要求限定。
Claims (11)
1.一种薄膜晶体管的制作方法,其特征在于,包括以下步骤:
S1形成有源层和源漏电极层,并在源漏电极层上形成光刻胶层,并通过构图工艺形成光刻胶层的图案;
S2利用所述光刻胶图案作为掩模对源漏电极层进行刻蚀,形成包括源极和漏极的源漏电极层的图案;
S3将光刻胶剥离后,再利用源漏电极层的图案作为掩模对有源层进行刻蚀,形成有源层的图案。
2.根据权利要求1所述的薄膜晶体管的制作方法,其特征在于,步骤S1中,所述光刻胶层为正性光刻胶;所述构图工艺包括利用灰阶掩模板或半阶掩模板对涂覆有光刻胶层的基板曝光、显影;再形成光刻胶保留区、光刻胶半保留区和光刻胶去除区。
3.根据权利要求2所述的薄膜晶体管的制作方法,其特征在于,步骤S2中,包括以下步骤:
进行第一次刻蚀,光刻胶去除区内的源漏电极层和有源层被刻蚀;进行灰化处理,光刻胶半保留区的光刻胶被去除,光刻胶保留区的光刻胶被减薄;
进行第二次刻蚀,先刻蚀掉光刻胶半保留区的源漏电极层,形成源极和漏极。
4.根据权利要求1所述的薄膜晶体管的制作方法,其特征在于,步骤S2所述对源漏电极层进行刻蚀采用湿法刻蚀工艺。
5.根据权利要求1所述的薄膜晶体管的制作方法,其特征在于,在步骤S3对有源层进行刻蚀采用干法刻蚀工艺。
6.根据权利要求5所述的薄膜晶体管的制作方法,其特征在于,所述干法刻蚀工艺为利用化学气体等离子轰击所述有源层。
7.根据权利要求1所述的薄膜晶体管的制作方法,其特征在于,在步骤3中,所述有源层包括半导体有源层和欧姆接触层,所述“对有源层进行刻蚀”步骤包括刻蚀掉所述源极和所述漏极之间区域的欧姆接触层。
8.根据权利要求1所述的薄膜晶体管的制作方法,其特征在于,所述制作方法还包括:
形成栅极层,通过一次构图工艺形成包括栅极的栅极层图案;
形成栅极绝缘层。
9.一种薄膜晶体管,包括栅极、栅极绝缘层、有源层和漏极、漏极,其特征在于,所述薄膜晶体管采用如权利要求1-8任一项所述的制作方法制备,所述有源层未被污染。
10.一种阵列基板,其特征在于,所述阵列基板包括如权利要求9所述的薄膜晶体管。
11.一种如权利要求10所述的阵列基板的制作方法,其特征在于,所述制作方法包括:
形成栅极层,通过一次构图工艺形成包括栅极、栅线的栅极层图案;
形成栅极绝缘层;
形成有源层和源漏电极层,并在源漏电极层上形成光刻胶层,并通过构图工艺形成光刻胶层的图案;利用所述光刻胶图案作为掩模对源漏电极层进行刻蚀,形成包括源极、漏极、数据线的源漏电极层的图案,剥离光刻胶;
形成像素电极层,并通过构图工艺形成包括像素电极的像素电极层的图案;所述像素电极与所述漏极直接接触连接;
利用源漏电极层的图案作为掩模对有源层进行刻蚀,形成有源层的图案。
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CN110718466A (zh) * | 2019-09-23 | 2020-01-21 | 深圳市华星光电技术有限公司 | 显示面板及其制备方法 |
CN111261588A (zh) * | 2020-02-04 | 2020-06-09 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管阵列面板及其制作方法 |
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