CN107086181B - 薄膜晶体管及其制作方法、阵列基板和显示器 - Google Patents

薄膜晶体管及其制作方法、阵列基板和显示器 Download PDF

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CN107086181B
CN107086181B CN201710254487.XA CN201710254487A CN107086181B CN 107086181 B CN107086181 B CN 107086181B CN 201710254487 A CN201710254487 A CN 201710254487A CN 107086181 B CN107086181 B CN 107086181B
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李贺飞
段献学
王铖铖
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种薄膜晶体管及其制作方法、阵列基板和显示器，该薄膜晶体管的制作方法，包括：提供基板；在所述基板上通过一次构图工艺形成有源层和覆盖所述有源层的遮光层，所述遮光层由光刻胶材料形成；以及形成源漏电极层和覆盖所述源漏电极层的钝化层。本发明提供的薄膜晶体管及其制作方法，在有源层上制作遮光层，以减少有源层受到光照而产生的漏电流，提升显示品质，且遮光层为光刻胶材料，在制备有源层的过程中，采用光刻胶层为掩模，制作完成有源层之后，保留的光刻胶层即用作覆盖有源层的遮光层，遮光层与有源层通过一次构图工艺制作出来，无需增加构图工序，能够简化工艺流程，提高生产效率。

Description

薄膜晶体管及其制作方法、阵列基板和显示器
技术领域
本发明涉及显示装置技术领域，尤其涉及一种薄膜晶体管及其制作方法、阵列基板和显示器。
背景技术
TFT-LCD(薄膜晶体管液晶显示器)由于具备低功耗、轻薄易用、高亮度、高对比度和高响应速度等众多优点，近年来得到了迅速地发展，在当前的平板显示器市场中占据了主导地位。与此同时，为适应市场需求，TFT-LCD正向着高分辨率、轻薄化、低功耗和高品质的方向发展。其中，显示画面均匀、高解析度、无窜扰等是高品质TFT-LCD的关键要求，其漏电流(Ioff)大小是影响液晶屏性能的重要参数之一，漏电流偏高会影响TFT的开关特性，从而导致TFT-LCD出现显示不均、发白、窜扰等显示类缺陷。而有源层对光照非常敏感，即使受到微弱光线的照射，有源层中也会产生很大的漏电流，且随着光照强度以及时间的延长，TFT器件的特性会急剧下降，从而导致显示品质的降低。
现有技术中，液晶面板由阵列基板、彩膜基板和液晶层构成。部分来自背光源的光线会经过彩膜基板或者液晶层反射到有源层上，从而导致漏电流增加，影响显示品质。
发明内容
鉴于现有技术中的上述问题，本发明的目的在于提供一种薄膜晶体管及其制作方法、阵列基板和显示器，以避免有源层受到光照射而产生漏电流，改善串扰，提高显示品质。
为达上述目的，本发明采用以下技术方案。
本发明的实施例提供一种薄膜晶体管的制作方法，包括：提供基板；在所述基板上通过一次构图工艺形成有源层和覆盖所述有源层的遮光层，所述遮光层由光刻胶材料形成；以及形成源漏电极层和覆盖所述源漏电极层的钝化层。
其中，所述在所述绝缘层上通过一次构图工艺形成有源层和覆盖所述有源层的所述遮光层包括：在所述基板上沉积所述有源层；在所述有源层上涂覆光刻胶层；以及以所述光刻胶层为掩模刻蚀所述有源层，得到有源层和覆盖所述有源层的所述遮光层。
其中，所述以所述光刻胶层为掩模刻蚀所述有源层，得到有源层和覆盖所述有源层的所述遮光层包括：采用掩模板对所述光刻胶层进行曝光，使所述光刻胶层形成未曝光区域、部分曝光区域和完全曝光区域；对所述光刻胶层进行显影处理，使得所述光刻胶层形成与所述未曝光区域、部分曝光区域和完全曝光区域分别对应的完全保留区域、部分保留区域和完全去除区域；采用刻蚀工艺刻蚀掉完全曝光区域对应的有源层；以及对所述光刻胶进行灰化处理，使所述光刻胶层的所述完全保留区域形成所述遮光层。
其中，所述光刻胶材料为具有感光特性的正性光刻胶材料或负性光刻胶材料，所述遮光层的厚度为400nm。
本发明的实施例还提供一种薄膜晶体管，包括：基板；有源层，形成在所述基板之上；以及遮光层，形成在所述有源层之上，所述遮光层覆盖所述有源层，其中，所述遮光层由光刻胶材料组成。
其中，所述有源层与所述遮光层采用一次构图工艺形成，所述遮光层用作形成所述有源层的掩模。
其中，所述薄膜晶体管还包括：栅线，形成在所述基板上；绝缘层，形成在所述栅线之上；所述有源层形成在所述绝缘层之上；源漏电极层和钝化层，形成在所述遮光层之上；以及像素电极层，形成在所述基板上远离所述栅线的区域。
其中，所述光刻胶材料为具有感光特性的正性光刻胶材料或负性光刻胶材料，所述遮光层的厚度为400nm。
本发明还提供一种阵列基板，包括如前所述的薄膜晶体管。
本发明还提供一种显示器，包括如前所述的阵列基板。
本发明提供的薄膜晶体管及其制作方法，在有源层上制作遮光层，以减少有源层受到光照而产生的漏电流，提升显示品质，且遮光层为光刻胶材料，在制备有源层的过程中，采用光刻胶层为掩模，制作完成有源层之后，保留的光刻胶层即用作覆盖有源层的遮光层，遮光层与有源层通过一次构图工艺制作出来，无需增加构图工序，能够简化工艺流程，提高生产效率。
附图说明
图1至图7示出根据实施例的制作薄膜晶体管的工艺图。
图8示出根据实施例的薄膜晶体管的结构示意图。
具体实施方式
下面结合附图和实施例对本发明作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅用于解释本发明，而非对本发明的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与本发明相关的部分而非全部结构。
实施例一
本实施例提供一种薄膜晶体管的制作方法。图1至图7示出根据实施例的制作薄膜晶体管的工艺图。
根据本实施例的制作薄膜晶体管的方法包括如下步骤。
步骤1，选取一张玻璃基板1并清洗干净。
步骤2，在所述玻璃基板1上通过沉积、曝光、显影、刻蚀等工艺制作出栅线2，如图1所示。
步骤3，通过PECVD(等离子体增强化学气相沉积)在玻璃基板1上沉积绝缘层3，如图2所示。
步骤4，通过一次构图工艺制作有源层与覆盖有源层的遮光层。具体的做法是在所述有源层上涂覆光刻胶层，以所述光刻胶层为掩模刻蚀所述有源层，得到有源层，同时该光刻胶层保留的部分作为覆盖所述有源层的所述遮光层。
下面详细描述步骤4的具体过程如下：
1)：在所述基板上通过PECVD沉积有源层4，如图3所示；
2)：在所述有钝化层上涂覆一层黑色遮光层5，所述遮光层为具有感光特性的正性光刻胶材料或者负性光刻胶材料；
3)：对基板上的遮光层6进行设计，设计出要形成最后的遮光层的区域、后继要形成源极和漏极的区域，采用半色调或灰色调掩模板对所述玻璃基板进行曝光，使光刻胶形成未曝光区域R1，该区域与最后的遮光层的区域相对应；、部分曝光区域R2，该区域与后继要形成源极和漏极的区域相对应；和完全曝光区域R3，该区域中的遮光层后继会被全部去除，形成的结构如图4所示。也就是说，完全曝光区域R3对应硅岛(也就是薄膜晶体管上主动区域)以外图形所在区域，部分曝光区域对应于R2后续要形成源极和漏极的区域，未曝光区域R1对应于上述图形区域以外的所在区域，该区域中的光刻胶会保留形成最后的遮光层。
4)：对光刻胶进行显影处理，显影处理后，未曝光区域的光刻胶厚度没有变化，形成光刻胶完全保留区域S1(与前述R1区域相对应)，部分曝光区域的光刻胶厚度变薄，形成光刻胶部分保留区域S2(与前述R2区域相对应)，完全曝光区域的光刻胶被完全去除，形成光刻胶完全去除区域S3(与前述R3区域相对应)，形成的结构如图5所示；
5)：通过第一次刻蚀工艺完全刻蚀掉光刻胶完全去除区域S3对应的有源层，形成的结构如图6所示；
6)：灰化去除部分保留区域S2的光刻胶，使光刻胶部分保留区域S2的光刻胶完全去除，光刻胶完全保留区域的光刻胶厚度减薄，灰化完成后，无需进行剥离工序，保留下来的光刻胶即形成所需的遮光层5，如图7所示。最后形成的遮光层5的厚度为400nm，该厚度的遮光层能更加有效地减小有源层受到光照射而产生的漏电流，提高显示品质。
步骤5，依次通过沉积、曝光、显影、刻蚀等工艺制作出依次制作出源漏电极层6、钝化层7和像素电极8，完成所述薄膜晶体管的制作，得到薄膜晶体管的结构如图8所示。
在本实施例中，在有源层上制作遮光层，以减少有源层受到光照而产生的漏电流，提升显示品质，且遮光层为光刻胶材料，在制备有源层的过程中，采用光刻胶层为掩模，制作完成有源层之后，保留的光刻胶层即用作覆盖有源层的遮光层，遮光层与有源层通过一次构图工艺制作出来，无需增加构图工序，能够简化工艺流程，提高生产效率。
实施例二
本实施例提供一种薄膜晶体管。图8示出根据实施例的薄膜晶体管的结构示意图。
如图8所示，根据本实施例的薄膜晶体管包括：基板1；有源层4，形成在所述基板之上1；以及遮光层5，形成在所述有源层之上，所述遮光层5覆盖所述有源层1，遮光层5的厚度为400nm。其中，所述遮光层由光刻胶材料组成。采用由光刻胶材料构成的遮光层5覆盖有源层1，能够减小有源层受到光照射而产生的漏电流，提高显示品质。
在形成有源层1的过程中，采用光刻胶层作为掩模层，在有源层形成完成之后，保留的光刻胶层即作为遮光层5，覆盖所述有源层1，从而所述遮光层采用一次构图工艺形成，能够简化工艺流程。
根据本实施例的薄膜晶体还包括：栅线2，形成在所述基板1上；绝缘层3，形成在所述栅线之上；所述有源层4形成在所述绝缘层3之上；源漏电极层6和钝化层7，形成在所述遮光层5之上；以及像素电极层8，形成在基板上远离所述栅线2的区域。
在一实施方式中，根据本实施例的薄膜晶体管可以采用实施例一中的薄膜晶体管的制作方法来制备。
在本实施例的薄膜晶体管中，在有源层上具有遮光层，能够减少有源层受到光照而产生的漏电流，提升显示品质，且遮光层为光刻胶材料，在制备有源层的过程中，采用光刻胶层为掩模，制作完成有源层之后，保留的光刻胶层即用作覆盖有源层的遮光层，遮光层与有源层通过一次构图工艺制作出来，无需增加构图工序，能够简化工艺流程，提高生产效率。
注意，上述仅为本发明的较佳实施例及所运用技术的原理。本领域技术人员应当理解，本发明不限于这里所述的特定实施例，对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本发明的保护范围。因此，虽然通过以上实施例对本发明进行了较为详细的说明，但是本发明不仅仅限于以上实施例，在不脱离本发明构思的情况下，还可以包括更多其他等效实施例，而本发明的范围由所附的权利要求决定。

Claims (10)

1.一种薄膜晶体管的制作方法，包括：
提供基板；
在所述基板上通过一次构图工艺形成有源层和覆盖所述有源层的黑色遮光层，所述黑色遮光层由光刻胶材料形成，且所述黑色遮光层的厚度为400nm；所述黑色遮光层设置有两个相互隔离且暴露所述有源层的过孔，任一所述过孔在所述基板上的正投影位于所述黑色遮光层在所述基板上的正投影内；以及
形成源漏电极层和覆盖所述源漏电极层的钝化层。
2.如权利要求1所述的薄膜晶体管的制作方法，其中，所述在所述基板上通过一次构图工艺形成有源层和覆盖所述有源层的所述黑色遮光层包括：
在所述基板上沉积所述有源层；
在所述有源层上涂覆光刻胶层；以及
以所述光刻胶层为掩模刻蚀所述有源层，得到有源层和覆盖所述有源层的所述黑色遮光层。
3.如权利要求2所述的薄膜晶体管的制作方法，其中，所述以所述光刻胶层为掩模刻蚀所述有源层，得到有源层和覆盖所述有源层的所述黑色遮光层包括：
采用掩模板对所述光刻胶层进行曝光，使所述光刻胶层形成未曝光区域、部分曝光区域和完全曝光区域；
对所述光刻胶层进行显影处理，使得所述光刻胶层形成与所述未曝光区域、部分曝光区域和完全曝光区域分别对应的完全保留区域、部分保留区域和完全去除区域；
采用刻蚀工艺刻蚀掉完全曝光区域对应的有源层；以及
对所述光刻胶进行灰化处理，使所述光刻胶层的所述完全保留区域形成所述黑色遮光层。
4.如权利要求1-3中任一所述的薄膜晶体管的制作方法，其中，所述光刻胶材料为具有感光特性的正性光刻胶材料或负性光刻胶材料。
5.一种薄膜晶体管，包括：
基板；
有源层，形成在所述基板之上；以及
黑色遮光层，形成在所述有源层之上且为黑色，所述黑色遮光层覆盖所述有源层，其中，所述黑色遮光层由光刻胶材料组成，且所述黑色遮光层的厚度为400nm；所述黑色遮光层设置有两个相互隔离且暴露所述有源层的过孔，任一所述过孔在所述基板上的正投影位于所述黑色遮光层在所述基板上的正投影内。
6.如权利要求5所述的薄膜晶体管，其中，所述有源层与所述黑色遮光层采用一次构图工艺形成，所述黑色遮光层用作形成所述有源层的掩模。
7.如权利要求6所述的薄膜晶体管，其中所述薄膜晶体管还包括：
栅线，形成在所述基板上；
绝缘层，形成在所述栅线之上；
所述有源层形成在所述绝缘层之上；
源漏电极层和钝化层，形成在所述黑色遮光层之上；以及
像素电极层，形成在所述基板上远离所述栅线的区域。
8.如权利要求5-7中任一所述的薄膜晶体管，其中所述光刻胶材料为具有感光特性的正性光刻胶材料或负性光刻胶材料。
9.一种阵列基板，包括如权利要求5-8中任一所述的薄膜晶体管。
10.一种显示器，包括如权利要求9所述的阵列基板。
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