CN107438903A - 薄膜晶体管制造方法 - Google Patents

薄膜晶体管制造方法 Download PDF

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CN107438903A
CN107438903A CN201680015888.3A CN201680015888A CN107438903A CN 107438903 A CN107438903 A CN 107438903A CN 201680015888 A CN201680015888 A CN 201680015888A CN 107438903 A CN107438903 A CN 107438903A
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layer
metal level
etch stop
thin film
film transistor
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CN107438903B (zh
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赵继刚
袁泽
余晓军
魏鹏
古普塔阿米特
鲁萍
琼蒂娜
罗浩俊
游埃里克凯翔
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SHENZHEN ROYOLE DISPLAY TECHNOLOGY Co.,Ltd.
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Shenzhen Royole Technologies Co Ltd
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Abstract

薄膜晶体管制造方法，包括：在基板(10)的表面上依次形成栅极(11)、覆盖栅极(11)及基板(10)表面形成栅极绝缘层(12)、位于所述栅极(11)上方形成有源层(13)、正投影于有源层(13)中部的蚀刻阻挡层(14)及在有源层(13)、蚀刻阻挡层(14)及栅极绝缘层(12)上形成包括覆盖所述蚀刻阻挡层(14)的第一区域(151)以及连接所述第一区域(151)相对两侧的第二区域(152)，所述每一第二区域(152)与所述有源层(13)及蚀刻阻挡层(14)连接的金属层(15)；在金属层(15)上形成光阻层(16)并形成被光阻层(16)覆盖的与第一区域(151)连接的第三区域；去除部分光阻层(16)，保留覆盖第三区域的剩余光阻层(16)并以露出部分第一区域(151)；去除露出的第一区域(151)，保留位于蚀刻阻挡层(14)相对两侧的与剩余光阻层(16)连接且高度相同的剩余的第一区域(151)，同时露出蚀刻阻挡层(14)；去除剩余的光阻层(16)。

Description

薄膜晶体管制造方法
技术领域
本发明涉及薄膜晶体管的制造领域，尤其涉及一种薄膜晶体管制造方法。
背景技术
薄膜晶体管(Thin-fi lm trans istors，TFT)阵列基板被广泛应用于不同类型的显示屏中，如LCD或AMOLED显示屏。随着显示屏尺寸的越来越大，对于TFT而言需要有大的电流以支持较高的分辨率。对于底栅型的薄膜晶体管，蚀刻阻挡层设于有源层上，用于在制程中保护有源层，以保证有源层电学性能的稳定。而受到TFT常规设置的影响，蚀刻阻挡层会增大源漏极与有源层之间形成的沟道的长度，从而影响显示器的分辨率。
发明内容
本发明实施例提供一种薄膜晶体管制造方法，用以解决蚀刻阻挡层与源漏极连接增大沟道的长度，产生较大的寄生电容而影响分辨率的技术问题。
本发明所述薄膜晶体管制造方法包括：
在基板的上形成栅极、栅极绝缘层以及有源层；
在所述栅极绝缘层和有源层上形成保护层；
图案化所述保护层以在所述有源层上形成蚀刻阻挡层；
在所述有源层、蚀刻阻挡层及栅极绝缘层上形成金属层；
在所述金属层的第一区域涂覆光敏层；
去除部分所述光敏层显露覆盖所述蚀刻阻挡层上的部分所述金属层；以及去除所述金属层露出部分所述蚀刻阻挡层。
本申请的薄膜晶体管制造方法采用金属层上覆盖光阻层后通过等离子灰化工艺先去除部分蚀刻阻挡层以限定需要去除的金属层来形成源极与漏极，实现通过蚀刻阻挡层与源极、漏极自对准，可以准确定义源漏极位置；而且本申请直接将源极与漏极定义在有源层上，即减小源极与漏极到有源层之间的沟道区域的长度，进而减小寄生电容的产生。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明第一实施例提供的薄膜晶体管制造方法步骤图。
图2至图13是图1所示的薄膜晶体管制造方法的各个制造流程的截面示意图。
图14是本发明第二实施例的薄膜晶体管制造方法步骤图。
图15至图20是图14所示的薄膜晶体管制造方法的各个制造流程的截面示意图。
具体实施方式
下面将结合本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述。
本发明提供了薄膜晶体管用于液晶显示屏或者有机显示屏中。
请参阅图1，本发明第一实施例所述的薄膜晶体管制造方法包括如下步骤：
步骤S1：在基板的上形成栅极、栅极绝缘层以及有源层。
一并参阅图2，具体包括步骤S11：提供一基板10，在所述基板10的表面上形成栅极11。步骤S12：在所述栅极11及所述基板10表面上形成栅极绝缘层12(如图3)。所述基板10为柔性材料制成。所述基板10为聚酰亚胺或者聚萘二甲酸乙二醇酯制成。在其它实施例中，所述基板30包括柔性基层及支撑柔性基层的支撑层，所述支撑层由玻璃、金属、硅或者塑胶材料制成。所述栅极11为金属材料涂于基板10的表面上，再通过图案化工艺去除多余的部分形成。一下步骤中所述的图案化工艺包括光罩、显影、蚀刻等现有构图工艺。
参阅图4与图5，步骤S13：在所述栅极绝缘层12上位于所述栅极上方形成有源层13。具体的，在所述栅极绝缘层12背向所述基板10的表面上形成半导体层102；图案化所述半导体层102形成所述有源层13，其中有源层13位于所述栅极11正上方并且投影可以覆盖所述栅极11。其中，所述半导体层102的材料为氧化铟镓锌(IGZO)、氧化锌(ZnO)、氧化铟锌(InZnO)或氧化锌锡(ZnSnO)或者为低温多晶硅、非晶硅。所述栅极绝缘层12采用氧化硅(SiOx)、氮化硅(SiNx)与氮氧化硅(SiNxOy)中的一种制成。
参阅图6，步骤S2：在所述栅极绝缘层12和有源层13上形成保护层；所保护层可以是有机材料、无极材料或者有机材料无极材料混合。
步骤S3，图案化所述保护层12以在所述有源层13上形成蚀刻阻挡层14。该步骤具体包括：在所述有源层13及栅极绝缘层12上形成有机物层(图未示)，然后，图案化所述有机物层形成位于所述有源层13中部的所述蚀刻阻挡层14。所述蚀刻阻挡层14用于保护所述有源层13，蚀刻阻挡层材料为有机材料，如光阻抗蚀剂或其他光敏有机材料。它可以很容易地除去溶剂或其他化学物质，而不破坏活动的有源层13。可以理解，在其它实施方式中，所述蚀刻阻挡层14可以保留。
请参阅图7，步骤S4：在所述有源13、蚀刻阻挡层14及栅极绝缘层12上形成金属层15；所述金属层15包括正投影覆盖所述蚀刻阻挡层14及有源层13的第一区域151以及连接所述第一区域151相对两侧的第二区域152。
具体的，在形成第一区域151与第二区域152时，使所述第一区域151覆盖所述蚀刻阻挡层14外表面及所述有源层13整个外表面，所述第二区域152连接所述第一区域位于有源层13的两侧。
步骤S5：在所述金属层15的第一区域151涂覆光敏层16。请参阅图8，本步骤包括在所述金属层15的第一区域上覆盖光刻胶或光敏有机材料，再通过图案化光刻胶形成正投影覆盖所述有源层13及蚀刻阻挡层14的所述光敏层16，所述光敏层16覆盖所述金属层的第一区域151。
步骤S6：去除部分所述光敏层16以显露覆盖所述蚀刻阻挡层14上的部分所述金属层15的第一区域151。
请参阅图9，本步骤包括S61，去除露出所述光敏层16两侧的金属层15的第一区域151以外的金属层。本步可以通过湿蚀刻工艺或者干蚀刻工艺去除所述第一区域151以外的金属层部分，剩余的第一区域151被光敏层16覆盖。
请参阅图10，本步骤还包括S62，去除部分光敏层16露出部分所述第一区域151。本步骤中中采用等离子灰化工艺去除所述部分光敏层16以显露覆盖所述蚀刻阻挡层14的部分第一区域151，使剩余的光敏层覆盖金属层的另一部分第一区域，并且剩余的光敏层位于露出的部分金属层两侧形成自对准平面162。具体的，所述第一区域151包括位于所述正投影于有源层的部分及正投影位于有源层两侧的区域153。去除部分光敏层16露出部分位于正投影于有源层的第一区域部分，露出的第一区域151大致呈倒置U形并且高出剩余的光敏层16。剩余的光敏层位于区域153上构成自对准平面162。本步骤省去光罩方式的图案化工艺，采用等离子灰化工艺去除部分光敏层16，可以避免制造过程中对有源层13或者金属层15带来外来试剂等污染物。
请参阅图11，步骤S7：去除所述金属层露出部分所述蚀刻阻挡层14。通过蚀刻工艺去除所述露出的金属层的部分第一区域151并露出所述蚀刻阻挡层14，蚀刻后的剩余的金属层的表面154与所述自对准平面162对齐。
请参阅图12，步骤S8，所述方法还包括：去除剩余的光敏层显露剩余的金属层以形成所述源极和漏极。
位于所述蚀刻阻挡层14一侧的剩余的第一区域与其相连接的区域153构成源极17，位于所述蚀刻阻挡层14另一侧的剩余的第一区域与其相连接的区域153构成漏极18。本步骤是通过图案化工艺去除露出的所述第一区域151，留下位于所述蚀刻阻挡层14两侧的与所述区域153连接的剩余第一区域151，剩余第一区域151与所述区域153构成漏极18及源极17。本步骤中包括：
在所述露出的第一区域表面以及剩余光阻层的表面涂布光刻胶层；
图案化所述光刻胶层，移除覆盖所述露出的第一区域的部分光刻胶层；
以剩余的光刻胶层为掩膜保护剩余光阻层，对所述露出的第一区域进行蚀刻；剥离剩余的所述光刻胶层，形成剩余的第一区域。
本方法还包括步骤S9：去除剩余的光敏层16以露出所述源极17与所述漏极18。剩余的光敏层是指覆盖剩余第一区域的光敏层。所述源极17与所述漏极18间隔设置并连接所述有源层13相对两侧的部分。
请参阅图13，本方法中，还可以包括步骤S10(图1未示)去除所述蚀刻阻挡层以形成所述薄膜晶体管的沟道区域：具体为图案化工艺去除所述蚀刻阻挡层14，露出所述源极17与漏极18之间的间隙。此步骤中，同时包括对源极17、漏极18与所述蚀刻阻挡层14连接的部分进行平整化加工。
在其他实施例中，也可以不包括步骤S10，蚀刻阻挡层没有被去除，从而保留在所述薄膜晶体管的沟道区域上，蚀刻阻挡层被保留可以不需要最后再对蚀刻阻挡层进行光刻，从而节省光罩次数，减少工艺流程，而且蚀刻阻挡层被保留也能增强最后整个薄膜晶体管的强度。
本申请的薄膜晶体管制造方法采用金属层上覆盖蚀刻阻挡层后通过等离子灰化工艺先去除部分光敏层16以限定需要去除的金属层来形成源极17与漏极18，实现通过蚀刻阻挡层与源极17、漏极18自对准，可以准确定义源漏极位置；而且相较于现有技术的在蚀刻阻挡层上通过光罩形成连接部分蚀刻阻挡层的源漏极，本申请直接将源极与漏极定义在有源层13上，即减小源极17与漏极18到有源层13之间的沟道区域的长度，进而减小寄生电容的产生，另外可以节省了一道光罩式图案化工艺，减少工艺流程，节省成本。
请参阅图14，本发明第二实施例中，与第一实施例不同之处在于在形成蚀刻阻挡层44的同时形成支撑层45及支撑层46。本实施例中，支撑层为两个，最后形成一对源漏极连接有源层43。具体的步骤如下，与上述第一实施例相同的步骤再次不再做过多赘述，所述薄膜晶体管制造方法包括：
步骤S20：在所述栅极绝缘层和有源层上形成保护层；所保护层可以是有机材料、无极材料或者有机材料无极材料混合。在此步骤S20之前在基板的上形成栅极、栅极绝缘层以及有源层是与第一实施例的步骤S1的方法相同，本实施例中可以借鉴第一实施例的图1至图3。
请参阅图15，步骤S21，图案化所述保护层以在所述栅极绝缘层12上形成蚀刻阻挡层44及位于所述蚀刻阻挡层44两侧的支撑层45、46。形成蚀刻阻挡层44及支撑层45、46是通过同一道工艺完成，也就是本实施例中，在说形成蚀刻阻挡层44时就形成了两侧的支撑层45、46，如此节省光罩次数，减少工艺流程。
请参阅图16与图17，步骤S22，在所述蚀刻阻挡层44、支撑层45、46上形成金属层47以及在所述金属层47上形成光敏层48，其中光敏层可以用有平坦化功能的有机层代替。此步骤与所述步骤S4在所述有源层、蚀刻阻挡层及栅极绝缘层上形成金属层，及步骤S5在所述金属层的第一区域涂覆光敏层均是通过同一道工艺完成，也就是说步骤S4的金属层同样覆盖支撑层，支撑层上的金属层同样有光敏层或有机平坦化层，如此可以节省一步工艺。
请参阅图18，步骤S23，通过同一道工艺完成去除部分所述光敏层48显露位于所述支撑层上45、46以及蚀刻阻挡层44上的部分所述金属层47；本步骤与所述步骤S6去除部分所述光敏层显露覆盖所述蚀刻阻挡层上的部分所述金属层的第一区域是同一工艺。本步骤的另一种实施方式是通过涂布有机光敏平坦化层，并通过不完全曝光以及对应的显影，选择性的去除支撑层以及蚀刻阻挡层上的有机平坦化层。
请参阅图19，步骤S24，去除所述金属层47显露部分所述支撑层45、46蚀刻阻挡层44，本步骤是通过同一道工艺完成，如此节省光罩次数，减少工艺流程。
本实施例中可以包括S25步骤,去除所述支撑层。去除所述支撑层包括先去除剩余的光敏层的步骤。在其它实施方式中，可以保留所述支撑层，支撑层被保留可以不需要最后再对支撑层进行光刻，从而节省光罩次数，减少工艺流程，而且支撑层被保留也能增强最后整个薄膜晶体管的强度。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。

Claims (14)

1.一种薄膜晶体管制造方法，其特征在于，所述方法包括：
在基板的上形成栅极、栅极绝缘层以及有源层；
在所述栅极绝缘层和有源层上形成保护层；
图案化所述保护层以在所述有源层上形成蚀刻阻挡层；
在所述有源层、蚀刻阻挡层及栅极绝缘层上形成金属层；
在所述金属层的第一区域涂覆光敏层；
去除部分所述光敏层显露覆盖所述蚀刻阻挡层上的部分所述金属层的第一区域；以及
去除所述金属层露出部分所述蚀刻阻挡层。
2.如权利要求1所述的薄膜晶体管制造方法，其特征在于，所述方法还包括：去除剩余的光敏层显露剩余的金属层以形成所述源极和漏极。
3.如权利要求2所述的薄膜晶体管制造方法，其特征在于，所述方法还包括：去除所述蚀刻阻挡层以形成所述薄膜晶体管的沟道区域。
4.如权利要求2或3所述的薄膜晶体管制造方法，其特征在于，所述步骤去除部分所述光敏层显露覆盖所述蚀刻阻挡层上的部分所述金属层及去除所述金属层显露部分所述蚀刻阻挡层包括：
等离子灰化工艺去除部分所述光敏层以显露覆盖所述蚀刻阻挡层的部分第一区域，使剩余的光敏层覆盖金属层的另一部分第一区域，并且剩余的光敏层位于露出的部分金属层两侧形成自对准平面；
蚀刻工艺去除所述露出部分第一区域并露出所述蚀刻阻挡层，蚀刻后的剩余的金属层的表面与所述自对准平面对齐。
5.如权利要求2所述的薄膜晶体管制造方法，其特征在于，所述步骤在所述金属层的第一区域涂覆光敏层；包括：在所述金属层的第一区域形成有光刻胶层，图案化光刻胶层形成正投影覆盖所述有源层及蚀刻阻挡层的光阻敏层。
6.如权利要求5所述薄膜晶体管制造方法，其特征在于，所述方法还包括去除露出所述光敏层两侧的金属层第一区域以外的金属层的步骤。
7.如权利要求6所述薄膜晶体管制造方法，其特征在于，去除露出所述光阻层两侧的部分金属层中采用湿蚀刻工艺或者干蚀刻工艺。
8.如权利要求1所述的薄膜晶体管制造方法，其特征在于，所保护层可以是有机材料、无极材料或者有机材料无极材料混合。
9.如权利要求1-4任一项所述的薄膜晶体管制造方法，其特征在于，所述方法还包括：
图案化所述保护层以在所述栅极绝缘层上形成位于所述蚀刻阻挡层两侧的支撑层；
在所述支撑层上形成金属层以及在所述金属层上形成光敏层；
去除部分所述光敏层显露位于所述支撑层上的部分所述金属层；
去除所述金属层显露部分所述支持层；以及
去除所述支撑层。
10.如权利要求9所述的薄膜晶体管制造方法，其特征在于，所述步骤图案化所述保护层以在所述栅极绝缘层上形成蚀刻阻挡层及位于所述蚀刻阻挡层两侧的支撑层通过同一道工艺完成。
11.如权利要求9所述的薄膜晶体管制造方法，其特征在于，所述步骤在所述支撑层上形成金属层以及在所述金属层上形成光敏层与所述步骤在所述有源层、蚀刻阻挡层及栅极绝缘层上形成金属层，在所述金属层的第一区域涂覆光敏层均是通过同一道工艺完成。
12.如权利要求9所述的薄膜晶体管制造方法，其特征在于，步骤在去除部分所述光敏层显露位于所述支撑层上的部分所述金属层与所述步骤去除部分所述光敏层显露覆盖所述蚀刻阻挡层上的部分所述金属层是通过同一道工艺完成。
13.如权利要求9所述的薄膜晶体管制造方法，其特征在于，所述步骤去除所述金属层显露部分所述支持层与所述步骤去除所述金属层露出部分所述蚀刻阻挡层是通过同一道工艺完成。
14.如权利要求9所述的薄膜晶体管制造方法，其特征在于，所述步骤去除所述支撑层包括先去除剩余的光敏层的步骤。
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