CN109378271B - 图案化的金属膜层、薄膜晶体管、显示基板的制备方法 - Google Patents
图案化的金属膜层、薄膜晶体管、显示基板的制备方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 239000010408 film Substances 0.000 title claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 43
- 239000002184 metal Substances 0.000 title claims abstract description 43
- 239000010409 thin film Substances 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 125
- 239000007769 metal material Substances 0.000 claims abstract description 82
- 238000005530 etching Methods 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 30
- 230000014759 maintenance of location Effects 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供一种图案化的金属膜层、薄膜晶体管、显示基板的制备方法,属于显示技术领域。本发明的图案化的金属膜层的制备方法,包括:在基底上依次沉积金属材料和光刻胶材料,并对光刻胶材料进行曝光,形成光刻胶保留区和光刻胶未保留区,去除光刻胶未保留区的光刻胶材料,形成位于光刻胶保留区的图案化的光刻胶;对完成上述步骤的基底上的金属材料进行刻蚀,去除位于光刻胶保留区的边缘区域和位于光刻胶未保留区的第一厚度的金属材料;对图案化的光刻胶进行处理,以使位于光刻胶保留区的中间区域的金属材料的边缘与剩余的图案化的光刻胶分离;刻蚀去除基底上剩余的、且与剩余的图案化的光刻胶未接触的金属材料,以形成图案化的金属膜层。
Description
技术领域
本发明属于显示技术领域,具体涉及一种图案化的金属膜层、薄膜晶体管、显示基板的制备方法。
背景技术
显示基板中的无机绝缘层可选用氮化硅、氧化硅等材料。其中,由于氮化硅容易导致显示基板出现色偏现象,故通常采用二氧化硅(SiO2)作为无机绝缘层材料。在保证开口率的情况下,为减小线电阻和压降,在选择显示基板中的电极材料时,为了保证显示基板的开口率,并减小线电阻和压降,一般选择导电率比较高的铜(Cu)。
在金属层上方形成无机绝缘层时,由于铜的刻蚀坡度角比较大,易出现SiO2膜层边缘部分膜层过薄或者膜质较差的情况,导致在后续多次高温工艺时出现铜扩散的发生,或者容易使栅极与源漏电极之间容易出现短路,使显示基板的良率降低。
在实际的制备工艺过程中,由于光刻胶与Cu的粘附性好,顶部的Cu不易被刻蚀,刻蚀坡度较大。现有技术中一般依靠开发新的Cu刻蚀液来改善刻蚀坡度,此方法主要依赖刻蚀液厂商,开发周期长,会增加生产成本和降低生产效率。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一,提供一种能够减小金属膜层刻蚀坡度角的图案化的金属膜层的制备方法。
解决本发明技术问题所采用的技术方案是一种图案化的金属膜层的制备方法,包括:
在基底上依次沉积金属材料和光刻胶材料,并对所述光刻胶材料进行曝光,形成光刻胶保留区和光刻胶未保留区,去除所述光刻胶未保留区的光刻胶材料,形成位于光刻胶保留区的图案化的光刻胶;
对完成上述步骤的所述基底上的金属材料进行刻蚀,去除位于所述光刻胶保留区的边缘区域和位于所述光刻胶未保留区的第一厚度的金属材料;
对所述图案化的光刻胶进行处理,以使位于所述光刻胶保留区的中间区域的金属材料的边缘与剩余的图案化的光刻胶分离;
刻蚀去除所述基底上剩余的、且与所述剩余的图案化的光刻胶未接触的金属材料,以形成图案化的金属膜层。
优选的,所述对所述图案化的光刻胶进行处理以使位于所述光刻胶保留区的中间区域的金属材料的边缘与剩余的图案化的光刻胶分离的步骤具体包括:
将所述图案化的光刻胶在预制显影液中放置预设时间,以使所述预制显影液腐蚀去除部分所述图案化的光刻胶,且位于所述光刻胶保留区的中间区域的金属材料的边缘与剩余的图案化的光刻胶分离;其中,所述预制显影液不会与所述金属材料发生化学反应。
进一步优选的,所述预制显影液为碱性显影液。
进一步优选的,所述碱性显影液包括四甲基氢氧化铵或者氢氧化钾。
优选的,所述对完成上述步骤的所述基底上的金属材料进行刻蚀,去除位于所述光刻胶未保留区和所述光刻胶保留区的边缘区域的第一厚度的金属材料的步骤包括:
通过湿法刻蚀工艺去除位于所述光刻胶未保留区和所述光刻胶保留区的边缘区域的第一厚度的金属材料。
优选的,所述刻蚀去除所述基底上剩余的、且与所述剩余的图案化的光刻胶未接触的金属材料,以形成图案化的金属膜层的步骤包括:
通过湿法刻蚀工艺去除所述基底上剩余的、且与所述剩余的图案化的光刻胶未接触的金属材料,以形成图案化的金属膜层。
优选的,在基底上形成所述金属材料的步骤具体包括:
通过溅射工艺在基底上沉积形成金属材料。
优选的,所述金属材料包括铜和/或铝。
解决本发明技术问题所采用的技术方案是一种薄膜晶体管的制备方法,包括形成栅极,以及源、漏极的步骤,形成所述栅极的步骤包括上述任意一种图案化的金属膜层的制备方法;
和/或,形成所述源、漏极的步骤包括上述任意一种图案化的金属膜层的制备方法。
优选的,在形成栅极的步骤之后,还包括形成层间绝缘层的步骤;
在形成源、漏极的步骤之后,还包括形成钝化层的步骤。
优选的,所述层间绝缘层的材料包括二氧化硅;
所述钝化层的材料包括二氧化硅。
解决本发明技术问题所采用的技术方案是一种显示基板的制备方法,包括:
上述任意一种薄膜晶体管的制备方法。
附图说明
图1为本发明的实施例的图案化的金属膜层的制备方法中形成位于光刻胶保留区的图案化的光刻胶的结构示意图;
图2为本发明的实施例的图案化的金属膜层的制备方法中去除位于光刻胶保留区的边缘区域和位于光刻胶未保留区的第一厚度的金属材料的结构示意图;
图3为本发明的实施例的图案化的金属膜层的制备方法中对图案化的光刻胶进行处理后的结构示意图;
图4为本发明的实施例的图案化的金属膜层的制备方法中形成图案化的金属膜层的结构示意图;
其中附图标记为:1、基底;2、图案化的金属膜层;2a、金属材料;3、光刻胶。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1:
如图1至4所示,本实施例提供一种图案化的金属膜层2的制备方法,可用于制备显示基板中的薄膜晶体管等器件中的图案化的金属膜层2。
该图案化的金属膜层2的制备方法包括:
S11、在基底1上依次沉积金属材料2a和光刻胶3材料,并对光刻胶3材料进行曝光,形成光刻胶3保留区和光刻胶3未保留区,去除光刻胶3未保留区的光刻胶3材料,形成位于光刻胶3保留区的图案化的光刻胶3。
其中,基底1优选为透明基底1,其厚度可为50-1000um,材料可为康宁玻璃、旭硝子玻璃、石英玻璃等。金属材料2a的材料可包括铜、铜、钼铌靶材(MoNb),具体可为一层金属材料,也可为多层叠层设置的金属材料。光刻胶3可为正性光刻胶或者负性光刻胶,在此不做限制。
具体的,如图1所示,本步骤中,可通过溅射工艺在基底1上沉积形成厚度为200-1000nm的整层金属材料2a,可通过涂布工艺形成整层的光刻胶3材料,之后通过光刻工艺形成图案化的光刻胶3。
S12、对完成上述步骤的基底1上的金属材料2a进行刻蚀,去除位于光刻胶3保留区的边缘区域和位于光刻胶3未保留区的第一厚度的金属材料2a。
本实施例中,对金属材料2a进行两次刻蚀后最终形成图案化的金属膜层2。本步骤中为对金属材料2a的第一次刻蚀。优选的,本步骤中可通过湿法刻蚀工艺去除位于光刻胶3未保留区和光刻胶3保留区的边缘区域的第一厚度的金属材料2a。
如图2所示,具体的,可将完成步骤S11的基底1放置于盛放有刻蚀液的容器中,该刻蚀液可与金属材料2a发生反应,通过控制刻蚀液的材质和刻蚀时间的长短,即可去除形成于基底1上的一定厚度的金属材料2a。其中,由于金属材料2a上方还形成有图案化的光刻胶3,故在刻蚀过程中,理论上只会除去位于光刻胶3未保留区(即光刻胶3的图案)的金属材料2a,而在实际过程中,刻蚀液还会除去位于光刻胶3保留区的边缘区域的金属材料2a,即形成如图2所示的结构,光刻胶3保留区的中间位置处的光刻胶3与金属材料2a接触,而光刻胶3保留区的边缘位置处的光刻胶3不与金属材料2a接触。
S13、对图案化的光刻胶3进行处理,以使位于光刻胶3保留区的中间区域的金属材料2a的边缘与剩余的图案化的光刻胶3分离。
如图3所示,本步骤中,通过对光刻胶3进行处理,去除一部分光刻胶3,使步骤S11处理后的金属材料2a背离基底1侧面(本实施例中金属材料2a背离基底1侧面指金属材料2a背离基底1未被刻蚀的区域)的边缘与处理后的光刻胶3(剩余的图案化的光刻胶3)分离,从而相对步骤S11减小金属材料2a与光刻胶3的接触面积,且剩余的图案化的光刻胶3分离在基底1上的正投影应覆盖金属材料2a背离基底1的侧面在基底1上的正投影。
具体的,本步骤可通过以下方式实现:将图案化的光刻胶3在预制显影液中放置预设时间,以使预制显影液腐蚀去除部分图案化的光刻胶3,且位于光刻胶3保留区的中间区域的金属材料2a的边缘与剩余的图案化的光刻胶3分离。其中,预制显影液不会与金属材料2a层发生化学反应。
在利用显影液对光刻胶3进行处理时,由于预制显影液只与光刻胶3发生反应,而不与金属材料2a发生反应,故在本步骤中,显影液在去除部分光刻胶3的同时会将原本与光刻胶3接触的部分金属材料2a裸露出来。因此,只要通过控制显影液的材料及与光刻胶3的反应时间,即可使金属材料2a背离基底1侧面的边缘与处理后的光刻胶3分离,将金属材料2a背离基底1侧面的边缘裸露出来。
优选的,本步骤中所使用的预制显影液为碱性显影液。通常情况下,金属材料2a不会与碱性显影液(酸碱度大于7)发生反应,故本实施例中优选使用能去除光刻胶3材料的碱性显影液。具体的,碱性显影液包括四甲基氢氧化铵或者氢氧化钾,当然可以为其它能够实现去除光刻胶材料的物质,在此不再一一列举。
S14、刻蚀去除基底1上剩余的、且与剩余的图案化的光刻胶3未接触的金属材料2a,以形成图案化的金属膜层2。
如图4所示,本步骤中对去除第一厚度的部分金属材料2a后的剩余的金属材料2a进行刻蚀(即对金属材料2a的二次刻蚀),具体可通过湿法刻蚀工艺去除基底1上剩余的、且与剩余的图案化的光刻胶3未接触的金属材料2a,从而形成图案化的金属膜层2。其中,在对剩余的金属材料2a进行刻蚀时,由于金属材料2a背离基底1的侧面边缘被裸露出来,故刻蚀面积相对在步骤S12后直接进行二次刻蚀的刻蚀面积增大了,从而能够相对减小所形成的图案化的金属膜层2的刻蚀坡度角。
本实施例提供的图案化的金属膜层2的制备方法中,在对金属材料2a的两次刻蚀工艺中,增加一步对光刻胶3层的处理步骤,使金属材料2a与图案化的光刻胶3的接触边缘分离,裸露出金属材料2a背离基底1侧面的边缘部分,从而在第二次对金属材料2a刻蚀时刻蚀面积增大,进而使形成的图案化的金属膜层2的刻蚀坡度角更小。因此,当在该图案化的金属膜层2上方形成无机绝缘层时,其对应金属膜层刻蚀边缘处的膜厚可以更厚且膜质更好。
实施例2:
本实施例提供一种薄膜晶体管的制备方法,包括形成栅极,以及源、漏极的步骤。
特别的是,本实施例中的栅极和/或源、漏极是依照实施例1中提供的任意一种图案化的金属膜层的制备方法制备而成的。
以制备底栅型薄膜晶体管为例,具体的,本实施例中的薄膜晶体管的制备方法可包括以下步骤:
S21、在基底上形成栅极。
具体的,本步骤中,可通过实施例1中提供的图案化的金属膜层的制备方法形成栅极,具体形成步骤及材料可参考实施例1,在此不再详述。
S22、在基底上形成层间绝缘层。
具体的,本步骤中,层间绝缘层可采用等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式沉积形成,其材料可采用氧化硅材料、氮化硅材料等,优选为二氧化硅,以避免应用该薄膜晶体管的显示基板出现色偏现象。也就是说,本实施例中所形成的栅极图案的可是坡度角较小,和/或所形成的源、漏极图案的可是坡度角较小。
S23、在基底上形成有源层。
具体的,本步骤中,可通过沉积工艺形成非晶硅膜,对非晶硅膜进行晶化以形成多晶硅膜,并对多晶硅膜进行掺杂,采用一次构图工艺,形成包括有源层的图形。
S24、在完成步骤23的基底上形成源极、漏极。
与步骤S21相似的,本步骤中的源极、漏极的形成也可依照实施例1中提供的图案化的金属膜层的制备方法制备而成。其中国内,优选的,源极、漏极的材料为铜。
S25、在完成步骤24的基底上形成钝化层。
本步骤中,钝化层可与步骤S22中的层间绝缘层采用同种工艺形成,在此不再详述。其中,优选的,钝化层的材料的二氧化硅。
本实施例提供的薄膜晶体管的制备方法中,采用实施例1中提供的图案化的金属膜层的制备方法制备薄膜晶体管的栅极及源、漏极,能够使栅极及源、漏极的刻蚀坡度角较缓,从而使后续形成的层间绝缘层、钝化层等结构位于对应金属膜层刻蚀边缘处的膜厚可以更厚且膜质更好,从而可有效避免在后续的其它高温制备工艺中出现金属材料的扩散问题,进而提高薄膜晶体管的性能。
实施例3;
本实施例提供一种显示基板的制备方法,包括实施例2中提供的薄膜晶体管的制备方法。
由于本实施例的显示基板的制备方法包括实施例2中提供的薄膜晶体管的制备方法,故其所制备的显示基板的薄膜晶体管的性能更好,从而提高显示基板的产品性能。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (11)
1.一种图案化的金属膜层的制备方法,其特征在于,包括:
在基底上依次沉积金属材料和光刻胶材料,并对所述光刻胶材料进行曝光,形成光刻胶保留区和光刻胶未保留区,去除所述光刻胶未保留区的光刻胶材料,形成位于光刻胶保留区的图案化的光刻胶;
对完成上述步骤的所述基底上的金属材料进行刻蚀,去除位于所述光刻胶保留区的边缘区域和位于所述光刻胶未保留区的第一厚度的金属材料;
对所述图案化的光刻胶进行处理,以使位于所述光刻胶保留区的中间区域的金属材料的边缘与剩余的图案化的光刻胶分离;
刻蚀去除所述基底上剩余的、且与所述剩余的图案化的光刻胶未接触的金属材料,以形成图案化的金属膜层;
所述对所述图案化的光刻胶进行处理以使位于所述光刻胶保留区的中间区域的金属材料的边缘与剩余的图案化的光刻胶分离的步骤具体包括:
将所述图案化的光刻胶在预制显影液中放置预设时间,以使所述预制显影液腐蚀去除部分所述图案化的光刻胶,且位于所述光刻胶保留区的中间区域的金属材料的边缘与剩余的图案化的光刻胶分离;其中,所述预制显影液不会与所述金属材料发生化学反应。
2.根据权利要求1所述的图案化的金属膜层的制备方法,其特征在于,所述预制显影液为碱性显影液。
3.根据权利要求2所述的图案化的金属膜层的制备方法,其特征在于,所述碱性显影液包括四甲基氢氧化铵或者氢氧化钾。
4.根据权利要求1所述的图案化的金属膜层的制备方法,其特征在于,所述对完成上述步骤的所述基底上的金属材料进行刻蚀,去除位于所述光刻胶未保留区和所述光刻胶保留区的边缘区域的第一厚度的金属材料的步骤包括:
通过湿法刻蚀工艺去除位于所述光刻胶未保留区和所述光刻胶保留区的边缘区域的第一厚度的金属材料。
5.根据权利要求1所述的图案化的金属膜层的制备方法,其特征在于,所述刻蚀去除所述基底上剩余的、且与所述剩余的图案化的光刻胶未接触的金属材料,以形成图案化的金属膜层的步骤包括:
通过湿法刻蚀工艺去除所述基底上剩余的、且与所述剩余的图案化的光刻胶未接触的金属材料,以形成图案化的金属膜层。
6.根据权利要求1所述的图案化的金属膜层的制备方法,其特征在于,在基底上形成所述金属材料的步骤具体包括:
通过溅射工艺在基底上沉积形成金属材料。
7.根据权利要求1所述的图案化的金属膜层的制备方法,其特征在于,所述金属材料包括铜和/或铝。
8.一种薄膜晶体管的制备方法,包括形成栅极,以及源、漏极的步骤,其特征在于,
形成所述栅极的步骤包括权利要求1至7中任意一项所述的图案化的金属膜层的制备方法;
和/或,形成所述源、漏极的步骤包括权利要求1至7中任意一项所述的图案化的金属膜层的制备方法。
9.根据权利要求8所述的薄膜晶体管的制备方法,其特征在于,
在形成栅极的步骤之后,还包括形成层间绝缘层的步骤;
在形成源、漏极的步骤之后,还包括形成钝化层的步骤。
10.根据权利要求9所述的薄膜晶体管的制备方法,其特征在于,
所述层间绝缘层的材料包括二氧化硅;
所述钝化层的材料包括二氧化硅。
11.一种显示基板的制备方法,其特征在于,包括:
权利要求8-10中任意一项所述的薄膜晶体管的制备方法。
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