TWI639179B - 真空整合硬遮罩製程及設備 - Google Patents

真空整合硬遮罩製程及設備 Download PDF

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Publication number
TWI639179B
TWI639179B TW104103153A TW104103153A TWI639179B TW I639179 B TWI639179 B TW I639179B TW 104103153 A TW104103153 A TW 104103153A TW 104103153 A TW104103153 A TW 104103153A TW I639179 B TWI639179 B TW I639179B
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Taiwan
Prior art keywords
metal
hard mask
forming
module
patterning
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TW104103153A
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English (en)
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TW201539538A (zh
Inventor
傑弗瑞 馬克思
理查Ａ 古思喬
丹尼斯Ｍ 豪斯曼恩
艾里恩 拉芙依
湯瑪斯 尼斯利
瑟利西Ｋ 瑞迪
巴德里Ｎ 凡拉德拉彥
亞圖 寇力克斯
喬治 安祖 安東內利
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美商蘭姆研究公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1813—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by radiant energy
    • C23C18/182—Radiation, e.g. UV, laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Abstract

用以形成金屬硬遮罩的真空整合無光阻方法及設備可提供低於30 nm之圖案化解析度。將對圖案化媒介敏感之含金屬(例如，金屬鹽、或有機金屬化合物)膜沉積在半導體基板上。該含金屬膜接著直接藉由在真空環境中暴露於圖案化媒介而圖案化(換言之，無須使用光阻)以形成金屬遮罩。例如，該含金屬膜為光敏性地、且該圖案化係藉由使用低於30 nm波長之光微影(例如，極紫外線(EUV)微影)而進行。

Description

真空整合硬遮罩製程及設備
本申請案主張於2014年1月31日所提出之美國臨時專利申請案第61/934514號之優先權，發明名稱為VACUUM-INTEGRATED HARDMASK PROCESSES，其內容被完整納入本文中做為參照。
此揭露內容大致上涉及半導體處理之領域。具體而言，本揭露內容係針對用以形成金屬硬遮罩而沒有使用光阻之真空整合製程。
半導體處理中的薄膜圖案化經常為半導體製造與加工中的關鍵步驟。圖案化涉及了微影。在習知的光微影(例如193 nm光微影)中，圖案之印刷係藉由從光子源放射光子至遮罩上並將圖案印刷至光敏性的光阻上，從而引起了光阻中的化學反應，顯影後，移除光阻的某些部分以形成圖案。
先進技術節點(如國際半導體技術藍圖所定義)包括了節點22 nm、16nm、及更小的節點。在16nm節點中，舉例而言，金屬鑲嵌結構中一般的介層窗或線之寬度通常不大於約30nm。在先進的半導體積體電路(ICs)及其他元件上之特徵部的縮放正驅使著微影改善解析度。
本發明之態樣係針對用以形成金屬硬遮罩之真空整合無光阻方法及設備。這樣的方法及設備可提供低於30 nm的圖案化解析度。一般而言，在半導體基板上沉積對圖案化媒介(例如，光子、電子、質子、離子、或中性粒子物種)敏感之含金屬(例如，金屬鹽、或有機金屬化合物)膜，使得該膜可藉由暴露於這些物種其中一者而圖案化。該含金屬膜接著直接藉由在真空環境中暴露於圖案化媒介而圖案化(換言之，無須使用光阻)以形成金屬遮罩。例如，該含金屬膜為光敏性地、且該圖案化係藉由使用光微影(例如EUV微影)而進行。
在一實行例中，於半導體基板上沉積對EUV光敏的一含金屬膜。含金屬膜接著直接藉由在真空環境中的EUV曝光而圖案化以形成金屬硬遮罩。以此方式，吾人提供了一真空整合金屬硬遮罩製程及相關的真空整合硬體，該真空整合金屬硬遮罩製程及相關的真空整合硬體結合了成膜(沉積/凝結)與光微影之步驟而得到極大地改善了EUV微影(EUVL)性能之結果，例如減少線邊緣粗糙度。藉由使用含金屬硬遮罩、及藉由直接使用EUV光子通量將含金屬膜圖案化，該製程完全避免了對光阻的需要。
在另一實行例中，一用以進行無光阻的金屬硬遮罩形成之設備可提供真空整合以進行所述之製程。該設備包括一含金屬膜沉積模組、一含金屬膜圖案化模組、及連接該沉積模組與該圖案化模組的一真空傳遞模組。
以下將參照相關的圖式來詳述本發明之這些與其他的特徵及優點。
現在將對本發明的具體實施例進行詳細的說明。隨附圖式中繪示了具體實施例之範例。雖然吾人將配合這些具體實施例來描述本發明，但吾人應理解這並非意圖將本發明限制於這些具體實施例。相反地，其係意圖涵蓋可被包括在本發明之精神與範圍中之替代方案、修改、及同等物。在以下描述中，提出了許多的具體細節以提供對於本發明之周密理解。但本發明可被實行而無須部分或全部的特定細節。在其他情況下，為了不對本發明造成不必要地混淆，眾所周知的程序運作則沒有被詳述。 引言
極紫外線(EUV)微影可藉由移動至以現行的光微影方法可達之更小成像來源波長而將微影技術延伸超過其光學限制以圖案化小的關鍵尺寸特徵部。在約13.5 nm波長的EUV光源可用於尖端的微影工具(亦被稱為掃描機)。EUV輻射在廣泛的固體及流體材料(包括石英及水蒸氣)中被強烈地吸收，且因此在真空中運作。
EUV微影一般係利用使用習知光阻製程來圖案化的有機硬遮罩(例如，PECVD非晶氫化碳的可灰化硬遮罩)。於光阻曝光期間內，EUV輻射在阻劑及下面的晶圓中被吸收而產生了高能光電子(約100 eV)、並接著產生了一連串的低能二次電子(大約10 eV)，其中低能二次電子橫向擴散了幾個奈米。這些電子擴大了阻劑中化學反應的範圍，而這增加了其EUV劑量敏感度。然而，本質上隨機的二次電子圖案被疊加在光學圖像上。此不想要的二次電子曝光導致了解析度的損失、可觀察到的線邊緣粗糙度(LER)、及在圖案化之阻劑中的線寬變異。這些缺陷被複製在待於隨後的圖案轉移蝕刻期間內被圖案化之材料中 。
不像絕緣體(例如光阻)，金屬較不易受二次電子曝光效果影響(由於二次電子可藉由與傳導電子散射而迅速失去能量並熱能化)。適合此製程的金屬元素可包括(但不限於)：鋁、銀、鈀、鉑、銠、釕、銥、鈷、釕、錳、鎳、銅、鉿、鉭、鎢、鎵、鍺、錫、銻、或其任何組合。
然而，在用以將毯覆性金屬膜(blanket metal film)圖案化為遮罩之光阻中的電子散射仍會導致不可接受的影響，例如LER。
吾人揭露了一真空整合金屬硬遮罩製程及相關的真空整合硬體，該真空整合金屬硬遮罩製程及相關的真空整合硬體結合了成膜(沉積/凝結)與光微影而得到極大地改善了EUV微影(EUVL)性能之結果，例如減少線邊緣粗糙度。藉由使用含金屬的硬遮罩膜、及藉由直接使用EUV光子通量將含金屬膜圖案化，該製程完全避免了對光阻的需要。
在各樣的實施例中，沉積(例如，凝結)製程(舉例而言，在像Lam Vector®這樣的PECVD工具中實行的ALD或MOCVD)可用以形成像光敏金屬鹽或含金屬有機化合物(有機金屬化合物)這樣的含金屬膜之薄膜，該含金屬膜強烈地吸收EUV(例如波長在10-20 nm等級之EUV)，例如在EUVL光源波長(例如，13.5 nm= 91.8 eV)之EUV。此薄膜可依據EUV曝光而光分解並形成一金屬遮罩，該金屬遮罩在隨後的蝕刻(例如，在導體蝕刻工具中，如Lam 2300®Kiyo®)期間內為圖案轉移層。
可於與微影平台(例如，晶圓步進機，如由荷蘭Veldhoven的ASML所供應之TWINSCAN NXE: 3300B®平台)整合之腔室中沉積該含金屬膜、且可於真空下傳遞該含金屬膜以使其不會於曝光前反應。EUVL亦需要極大地被降低之壓力的事實(考慮到周圍氣體如H2 O、O2 等對於入射光子的強烈光吸收)促成了與微影工具之整合。
在一些實施例中，若出於光學或機械原因之需要，可於EUV曝光/分解步驟之後實行選擇性膜沉積以增加遮罩材料的厚度；被稱為圖案擴增(pattern amplification)的製程。以此看來，最初的硬遮罩接著起著種子層的作用，而最終遮罩係形成於其上，類似於無電沉積(ELD)或電化學沉積(ECD)的金屬種子層之使用。 真空整合無光阻金屬硬遮罩形成製程
圖1A-E繪示了真空整合無光阻硬遮罩形成製程的代表性處理流程圖。一般而言，吾人於半導體基板上沉積一含金屬膜，該含金屬膜對圖案化媒介(例如光子、電子、質子、離子、或中性粒子物種)敏感而使得該膜可藉由曝露於那些物種其中一者而被圖案化。該含金屬膜接著直接藉由在真空環境暴露於圖案化媒介而圖案化(換言之，沒有使用光阻)以形成金屬遮罩。此描述主要係參照藉由極紫外線微影(EUV微影(EUVL))而圖案化的含金屬膜(具體而言，其中金屬為Sn)，具體而言，該EUVL具有使用激發的Sn液滴之EUV來源。在本文中將這樣的膜稱為EUV光敏膜。然而，吾人應理解其他實行方式亦為可能的，其中包括了不同的含金屬膜及圖案化媒介/技術。
期望的硬遮罩金屬會是強的吸收體且會具有相當寬的吸收剖面(absorption profile)、高的熔點、低的延展性/高的物理穩定性、且可輕易被沉積。對於此揭露內容之目的而言，吾人需要注意放射一給定能量之光子的材料亦將吸收具有該能量的光子。強烈地被吸收的光將導致想要的分解、或者會使膜感光而使得曝光的區域可被以熱、濕化學品等來移除。圖2提供了使用激發的錫液滴之EUV來源的放射光譜。見R.W. Coons等人的”Comparison of EUV spectral and ion emission features from laser produced Sn and Li plasmas”, Proc. Of SPIE Vol. 7636 73636-1 (2010)；R.C. Spitzer等人的”Conversion efficiencies from laser-produced plasmas in the extreme ultraviolet region”, 79 J. Appl. Phys., 2251 (1996)；及H.C. Gerritsen等人的”Laser-generated plasma as soft x-ray source”, J. Appl. Phys. 59 2337 (1986)，吾人為了它們與各樣金屬的放射/吸收特性有關之揭露內容而將它們納入本文中做為參照。所放射的光子係在13.5 nm或91.8 eV之等級。因此，Sn對於此應用而言為期望的硬遮罩金屬。
參照圖1A，顯示了待圖案化之半導體基板100。在一般範例中，半導體基板100為包括了部分已形成之積體電路的矽晶圓。
圖1B繪示了沉積在半導體基板 100上之一含金屬膜102，該含金屬膜對於圖案化媒介敏感。該含金屬膜可為金屬鹽，例如對於暴露至圖案化媒介敏感的有機金屬化合物、或金屬鹵化物，使得含金屬膜被分解為卑金屬(base metal)或變得對於隨後的顯影製程敏感。合適的圖案化媒介可為光子、電子、質子、離子、或中性粒子物種，俾使含金屬膜102可藉由曝露於這些物種其中一者而分解為卑金屬或變得對於隨後的顯影製程敏感而被圖案化。如下面進一步說明，有效的金屬及圖案化媒介組合的一特定範例係沉積為金屬鹵化物(例如，SnBr4 )或有機金屬(例如，Sn(CH3 )4 )的錫，其中錫係由EUV微影來圖案化。一般而言，在沉積之前，半導體基板100係放置在反應器腔室中以進行在真空下的含金屬膜沉積。
含金屬膜102的毯覆層(blanket)可藉由從適當的前驅物凝結而形成(例如，在像可從Fremont， CA的Lam Research公司獲得的Altus® CVD工具這樣的非電漿CVD反應器中)。例如，錫溴化物(SnBr4 )，其具有在760Torr為205˚C的正常沸點及31˚C之熔點、及在10˚C為10Torr之蒸氣壓。可將其凝結至基板上以形成固體的SnBr4 膜，該SnBr4 膜具有取決於曝露時間及基板溫度之厚度，舉例在5至200 nm之等級，例如10 nm。此藉由凝結之沉積的適當製程條件包括了在約0與30˚C之間的沉積溫度(例如約20˚C)、及小於20 Torr的反應器壓力(例如於20˚C維持在14與15Torr之間)。將前驅物流率維持在約100與1000 sccm之間使得吾人得以控制沉積速率。
錫金屬之替代來源可為有機金屬。例如，四甲基錫(Sn(CH3 )4 )在760 Torr具有75˚C的正常沸點及-54˚C的熔點。亦可將其凝結至基板上以形成固體的Sn(CH3 )4 膜，該Sn(CH3 )4 膜具有取決於曝露時間及基板溫度之厚度，舉例而言在5至200 Å之等級，例如100Å。此藉由凝結之沉積的適當製程條件包括了在約-54與30˚C之間的沉積溫度(例如約20˚C)、及小於20 Torr的反應器壓力(例如在20˚C維持在1 Torr)。將前驅物流率維持在約100與1000 sccm之間使得吾人得以控制沉積速率。
另一適合用以形成金屬遮罩之金屬為鉿(Hf)。可將鉿氯化物HfCl4 (在190˚C為1 Torr的蒸汽壓與432˚C的熔點)凝結至基板上以形成固體的HfCl4 結晶膜，該HfCl4 膜具有取決於曝露時間及基板溫度之厚度，舉例而言在50至2000 nm之等級，例如1000 nm。此藉由凝結之沉積的適當製程條件包括了在約0與300˚C之間的沉積溫度(例如約100˚C)、及小於10 Torr的反應器壓力(例如在100˚C維持在0.1與1 Torr之間)。將前驅物流率維持在約10與100 sccm之間使得吾人得以控制沉積速率。
為了防止水蒸汽所導致的劣化，含Sn及含Hf膜之形成及傳遞係在真空環境下進行。所形成的膜接著被傳遞至EUV圖案化工具並藉由直接曝光而圖案化(如圖1C-D中所示，無需使用光阻)。
吾人應注意，EUVL工具一般在較沉積工具更高的真空下運作。如果是這樣，則期望於從沉積傳遞至圖案化工具的期間內增強基板的真空環境，俾使基板及沉積的含金屬膜得以於進入該圖案化工具中前脫氣。這係為了使圖案化工具的光學元件不被來自基板的廢氣(off-gassing)所污染。
參照圖1C，對於藉由EUVL而圖案化的金屬鹵化物Sn基含金屬膜而言，分解化學作用可藉由以下方程式而進行： SnBr4 → Sn + 2Br2 光子直接將SnBr4 分解為Sn(錫金屬)及溴氣(Br2 )。或者，一反應物X2 (例如，其中X為Cl、I、或H)可用以促進反應途徑SnBr4 + X2 → SnX4 + 2Br2 ，且最終藉由光分解而變成Sn，特別是其中SnX4 係較輕易凝結的SnBr4 更容易光活化的。在任一個情況下，副產物(Br2 )及反應物(X2 )皆需要抑制措施(例如真空)。
對於藉由EUVL而圖案化的有機金屬Sn基含金屬膜而言，光子直接將Sn(CH3 )4 分解為Sn(錫金屬)及乙烷氣體，分解化學作用藉由以下方程式而進行： Sn(CH3 )4 → Sn + 2C2 H6
對於藉由EUVL而圖案化的金屬鹵化物Hf基含金屬膜而言，分解化學作用可藉由以下方程式而進行： HfCl4 → Hf + 2Cl2 光子直接將HfCl4 分解為Hf金屬及氯氣(Cl2 )。或者，一反應物X2 (例如，其中X為Br、I、或H)可用以促進反應途徑HfCl4 + X2 → HfX4 + 2Cl2 ，且最終藉由光分解而變成Hf，特別是其中HfX4 係較輕易凝結的HfCl4 更容易光活化的。在任一個情況下，副產物(Cl2 )及反應物(X2 )皆需要抑制措施(例如真空)。
如圖1C中所示，圖案化產生了已曝光的含金屬膜區域及未曝光區域102b，其中已曝光的含金屬膜區域形成金屬遮罩102a、未曝光區域102b為待由圖案顯影移除之材料。
參照圖1D，接著可對圖案進行顯影。圖案之顯影可僅藉由將基板加熱以使含金屬膜的未曝光區域102b揮發而發生，使得僅有已曝光區域102a留下做為完全形成的金屬遮罩。吾人應注意，由於在熱及環境上穩定之圖案化金屬遮罩已被形成，因此此圖案顯影操作可不需要真空整合。在圖案化工具外面進行圖案顯影以避免含金屬膜分解的任何不相容副產物污染工具光學元件可為期望的。
參照圖1E，作為一可選性步驟，吾人可進行圖案擴增。例如，吾人可於圖1C及/或1D中所描繪的操作之後在圖案化的基板上執行選擇性ALD或無電沉積(ELD)以用額外的選擇性沉積金屬106來增加金屬遮罩的厚度。這可有助於減少遮罩的光透射、或使其更在機械上更為結實。這樣的擴增可藉由例如改編無電沉積製程(例如在美國專利第6911067、6794288、6902605、及4935312號中所描述的)而達成，其與此有關的揭露內容被納入本文中作為參照。
例如，初始為1 nm之種子可被以此方式放大至10 nm。像參照圖1D所討論的圖案顯影，由於在擴增之前，在熱及環境上穩定之圖案化金屬遮罩已經形成，此操作可不需要真空整合。 替代製程實施例
做為金屬鹽或有機金屬含金屬膜沉積之替代方案，可藉由使用合適前驅物之金屬有機CVD的多步驟製程(舉例而言，在一非電漿CVD反應器中，例如Altus® CVD工具或像Vector® PECVD工具這樣的PECVD反應器，兩者皆可從Fremont，CA的Lam Research公司獲得)而沉積一含金屬EUV光敏膜。舉例而言，烷基及胺基前驅物之電漿沉積(例如後面接著氨(NH3 /H2 )電漿的CH4 /H2 電漿沉積)可在半導體基板上產生胺基丙基三乙氧基矽烷(APTES，aminopropyltriethoxysilane)的胺基官能化自組裝單分子層(SAM)。這樣的胺端表面(amine terminated surface)使得保角無電沉積(ELD)得以進行。接著可將SAM傳遞至EUV圖案化工具並將其圖案化。圖案化SAM藉由ELD(例如，藉由暴露於PdCl2 /H2 O溶液以提供Pd催化劑、後面接著進行Ni或Co然後銅(Cu)的ELD(根據本技藝中已知的製程考慮這些參數))而進行之選擇性生長產生了無需使用光阻而形成的基於金屬之遮罩。這樣基於SAM之手段亦可被用於圖案擴增以做為為了該目的而參照圖1描述之ELD技術的替代方案。
吾人亦應注意，雖然本揭露內容主要參照EUVL做為圖案化技術，替代實施例可使用電子、離子、或中性粒子物種之聚焦束以直接將圖案寫在毯覆性遮罩上，這些步驟亦於真空中進行。若副產物凝結於EUVL系統的反射光學元件上，則可使用原位腔室清潔。 設備
圖3描繪了一半導體製程群集工具架構，該半導體製程群集工具架構具有真空整合金屬沉積與圖案化模組，該等真空整合金屬沉積與圖案化模組與適合實行本文中所描述的真空整合製程之真空傳遞模組相接合。可將用以在多個存儲設施與製程模組之間”傳遞”晶圓的傳遞模組之配置稱為”群集工具架構”系統。根據特定製程的需要，金屬沉積與圖案化模組為真空整合的。真空運輸模組(VTM) 338與四製程模組320a-320d相接合，可分別將該等製程模組最佳化以執行各樣的製造製程。舉例而言，可實行製程模組320a-320d以執行凝結、沉積、蒸發、ELD、蝕刻、及/或其它半導體製程。例如，模組320a可為如本文中所述適於進行含金屬膜之沉積的非電漿CVD反應器，例如可從Fremont，CA的Lam Research公司獲得的Altus® CVD工具。且模組320b可為PECVD工具，例如Lam Vector®。吾人應了解，圖式不一定係按比例繪製。
氣閘342及346(亦稱為負載鎖室或傳遞模組)與VTM 338及圖案化模組340相接合。例如，合適的圖案化模組可為由荷蘭Veldhoven的ASML所供應的TWINSCAN NXE: 3300B®平台。此工具架構使得吾人得以在真空下傳遞工作件(例如，具有沉積的含金屬膜之基板)，俾使工作件不在曝光前發生反應。EUVL亦需要極大地被降低之壓力的事實(考慮到周圍氣體如H2 O、O2 等對於入射光子的強烈光吸收)促成了沉積模組與微影工具之整合。
氣閘342可為”往外的”負載鎖室(意指基板離開服務沉積模組620a的VTM 338至圖案化模組340的傳遞)，且氣閘346可為”往內的”負載鎖室(意指基板從圖案化模組340回到VTM 338之傳遞)。往內的負載鎖室346亦可為基板之進入或外出提供至工具外部的接口。每一製程模組具有將該模組接合至VTM 338的一刻面(facet)。例如，沉積製程模組320a具有刻面336。當晶圓326在個別的站之間移動時，在每一刻面中使用感測器(例如，如所示的感測器1-18)來檢測該晶圓之通過。可用額外的刻面及感測器(未顯示)來對圖案化模組340、及氣閘342與346進行類似的裝配。
主要VTM機械臂322於模組之間(包括氣閘342及346)傳遞晶圓326。在一實施例中，機械臂322具有一臂，但在另一實施例中，機械臂322具有二臂，其中每一臂具有一末端作用器324以拾取晶圓(如晶圓3 26)用於傳遞。前端機械臂344，其係用以將晶圓326從往外的氣閘342傳遞至圖案化模組340中、從圖案化模組340傳遞至往內的氣閘346中。前端機械臂344亦可為了基板之進入或外出而在往內的負載鎖室與該工具的外部之間傳遞晶圓326。由於往內的氣閘模組346具有使環境在大氣與真空之間匹配的能力，因此晶圓326能夠在二壓力環境之間移動而不被損壞。
吾人應注意，EUVL工具一般在較沉積工具更高的真空運作。如果是這樣，則期望於從沉積傳遞至圖案化工具的期間內增強基板的真空環境，俾使基板及沉積的含金屬膜得以於進入該圖案化工具中前脫氣。向外的氣閘342可藉由將傳遞的晶圓保持在較低的壓力(不高於圖案化模組340中的壓力)一段時間、並排出任何廢氣而提供此功能，使得圖案化工具340的光學元件不被來自基板的廢氣污染。對於該往外的、排出廢氣的氣閘而言，合適的壓力不超過1E-8 Torr。
在一些實施例中，系統控制器350(其可包括一或更多物理或邏輯控制器)控制了群集工具及/或其個別的模組之操作其中的一些或全部。吾人應注意，控制器可能在群集架構的本機、或可位於在群集架構外面的製造廠區、或在遠端位置中且經由網路連接至群集架構。系統控制器650可包括一或更多記憶體裝置及一或更多處理器。處理器可包括中央處理單元(CPU)或電腦、類比及/或數位輸入/輸出連線、步進機馬達控制器板、及其他類似構件。用以實行適當控制操作的指令係在處理器上執行。這些指令可儲存在與控制器聯結的記憶體裝置中，或者可透過網路來提供它們。在某些實施例中，系統控制器執行系統控制軟體。
系統控制軟體可包括了用以控制應用的時序、及/或工具或模組操作的任何態樣之強度的指令。可以任何合適的方式對系統控制軟體進行配置。例如，可撰寫各樣的處理工具構件子程序或控制物件以控制用以實行各樣的處理工具製程所必須的處理工具構件之操作。可以任何合適的電腦可讀程式語言將系統控制軟體編碼。在一些實施例中，系統控制軟體包括了用以控制上述的各樣參數之輸入/輸出控制(IOC)序列指令。例如，半導體製造處理的每一階段可包括一或更多用以被系統控制器執行的指令。舉例而言，用以為凝結、沉積、蒸發、圖案化、及/或蝕刻階段設定製程條件之指令可被包括在一對應的配方階段中。 結論
本文中所描述的膜沉積及微影製程與設備之真空整合提供了EUV光敏金屬膜沉積及隨後的圖案化，該圖案化係直接藉由在真空環境中的直接EUV曝光而防止其分解或劣化。EUVL係在真空中完成以避免入射的13.5 nm光通量被周圍氣體的光吸收所削減。真空整合硬遮罩製程的優點包括了：EUV系統之真空操作開啟了使用對氧及濕氣敏感之化合物的可能性；在設備中的沉積系統與EUV系統之真空整合使得吾人得以使用這些材料。金屬前驅物的光分解產生了一非線性反應，其中光分解被金屬膜之增強的吸收所加強。金屬在高能二次電子之熱化上較光阻更佳，從而改善了對比度或LER。直接使用金屬膜做為遮罩(或與圖案擴增一起)使得薄許多的膜成為可能並減少了所需的曝露時間。從遮罩的觀點看來，金屬膜為蝕刻製做了更好的硬遮罩、且減少了所需的厚度。此外，根據本文中所描述之製程，可進一步發展及最佳化與EUV真空及光學元件相容之材料、具有用於金屬沉積的適當劑量臨界值之有機金屬前驅物、及具有用以消除給定空間中的成核位置的多重光分解事件之成核膜。
吾人應當理解，本文中所描述之範例及實施例僅是為了說明性之目的，且熟悉本技藝者可據其而聯想到各樣的修改或變化。雖然吾人為了清楚起見而省略了各樣的細節，但仍可實行各樣的設計替代方案。因此，該等實施例應被認為係說明性而非限制性的，且本發明不受限於本文中所提供的細節，而是可在隨附的申請專利範圍之範圍內對其進行修改。
1~18‧‧‧感測器
100‧‧‧半導體基板
102‧‧‧含金屬膜
102a‧‧‧金屬遮罩
102b‧‧‧未曝光區域
106‧‧‧選擇性沉積金屬
320a‧‧‧製程模組
320b‧‧‧製程模組
320c‧‧‧製程模組
320d‧‧‧製程模組
322‧‧‧機械臂
324‧‧‧末端作用器
326‧‧‧晶圓
336‧‧‧刻面
338‧‧‧真空運輸模組(VTM)
340‧‧‧圖案化模組
342‧‧‧氣閘
344‧‧‧前端機械臂
346‧‧‧氣閘
圖1A-E繪示了一真空整合無光阻硬遮罩形成製程的代表性處理流程圖。
圖2提供了一使用激發的Sn液滴之EUV來源的放射光譜。
圖3描繪了一適合實行本文中所述之真空整合製程的半導體製程群集架構，該半導體製程群集架構具有與真空傳遞模組相接合之金屬沉積及圖案化模組。

Claims (20)

  1. 一種形成金屬硬遮罩的無光阻方法，包含：沉積對極紫外線光敏(EUV-sensitive)的一含金屬膜於一半導體基板上；及直接藉由在真空環境中的EUV曝光而將該含金屬膜圖案化以形成該金屬硬遮罩；其中該半導體基板為包括了部分已形成之積體電路的一矽晶圓，且該方法更包含：在該沉積之步驟之前，將該半導體基板設置於一第一反應器腔室中以用於該含金屬膜沉積；及在該沉積之步驟之後，在真空下將該半導體基板傳遞至一微影製程腔室以用於該圖案化。
  2. 如申請專利範圍第1項之形成金屬硬遮罩的無光阻方法，其中該含金屬膜為一金屬鹽。
  3. 如申請專利範圍第2項之形成金屬硬遮罩的無光阻方法，其中該金屬鹽為一金屬鹵化物。
  4. 如申請專利範圍第3項之形成金屬硬遮罩的無光阻方法，其中該金屬為錫(Sn)。
  5. 如申請專利範圍第3項之形成金屬硬遮罩的無光阻方法，其中該金屬為鉿(Hf)。
  6. 如申請專利範圍第1項之形成金屬硬遮罩的無光阻方法，其中該含金屬膜為一有機金屬化合物。
  7. 如申請專利範圍第6項之形成金屬硬遮罩的無光阻方法，其中該有機金屬化合物之金屬為錫(Sn)。
  8. 如申請專利範圍第1項之形成金屬硬遮罩的無光阻方法，更包含於進入該微影製程腔室之前使該基板脫氣(outgassing)。
  9. 如申請專利範圍第8項之形成金屬硬遮罩的無光阻方法，其中該脫氣之步驟包含了將該基板周圍的壓力降低至不高於1E-8Torr。
  10. 如申請專利範圍第1項之形成金屬硬遮罩的無光阻方法，更包含了藉由在該金屬硬遮罩上進行一選擇性沉積而達成圖案擴增(pattern amplification)。
  11. 如申請專利範圍第10項之形成金屬硬遮罩的無光阻方法，其中該選擇性沉積包含了一無電沉積。
  12. 一種形成金屬硬遮罩的無光阻方法，包含：於一半導體基板上沉積一含金屬膜，該含金屬膜對一圖案化媒介敏感，該圖案化媒介包含了光子、電子、質子、離子、或中性粒子物種，使得該膜可藉由暴露於該等物種其中一者而圖案化；及直接藉由在真空環境中暴露於該圖案化媒介而將該含金屬膜圖案化。
  13. 如申請專利範圍第12項之形成金屬硬遮罩的無光阻方法，其中：該含金屬膜為光敏性的；及該圖案化之步驟係使用一光微影來進行。
  14. 如申請專利範圍第13項之形成金屬硬遮罩的無光阻方法，其中該光微影為EUV微影。
  15. 一種進行無光阻的金屬硬遮罩形成之設備，該設備包含：一含金屬膜沉積模組；一含金屬膜圖案化模組；一真空傳遞模組，連接該沉積模組及該圖案化模組。
  16. 如申請專利範圍第15項之進行無光阻的金屬硬遮罩形成之設備，其中：該沉積模組包含了一反應器腔室，該反應器腔室係用以沉積一光敏的金屬鹵化物或有機金屬化合物膜；及該圖案化模組包含了一光微影工具，該光微影工具具有低於30nm波長輻射之來源。
  17. 如申請專利範圍第16項之進行無光阻的金屬硬遮罩形成之設備，其中該圖案化模組為EUV微影工具。
  18. 如申請專利範圍第16項之進行無光阻的金屬硬遮罩形成之設備，其中該圖案化模組具有一圖案化媒介之來源，該圖案化媒介係選自由光子、電子、質子、離子、及中性粒子物種所組成之群組，使得該含金屬膜可藉由暴露於該圖案化媒介而圖案化。
  19. 如申請專利範圍第16項之進行無光阻的金屬硬遮罩形成之設備，更包含一往內之負載鎖室及一往外之負載鎖室，該往內之負載鎖室係用以將一基板從該圖案化模組傳遞至該真空傳遞模組，該往外之負載鎖室係用以將該基板從該真空傳遞模組傳遞至該圖案化模組；且其中該往外之負載鎖室起著一脫氣模組之功能。
  20. 如申請專利範圍第16項之進行無光阻的金屬硬遮罩形成之設備，更包含一控制器，該控制器包括了用以進行無光阻的金屬硬遮罩形成之複數指令，該等指令包含了用於以下目的之指令：於該含金屬膜沉積模組中沉積對EUV光敏的一含金屬膜在一半導體基板上；在真空下將該基板傳遞至該含金屬膜圖案化模組；及在該含金屬膜圖案化模組中直接藉由在真空環境中的EUV曝光而將該含金屬膜圖案化以形成該金屬硬遮罩。
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US9778561B2 (en) 2017-10-03
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US20150221519A1 (en) 2015-08-06
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US20230266662A1 (en) 2023-08-24
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