CN105047541A - 结合真空的硬掩模工艺和装置 - Google Patents

结合真空的硬掩模工艺和装置 Download PDF

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Publication number
CN105047541A
CN105047541A CN201510053668.7A CN201510053668A CN105047541A CN 105047541 A CN105047541 A CN 105047541A CN 201510053668 A CN201510053668 A CN 201510053668A CN 105047541 A CN105047541 A CN 105047541A
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China
Prior art keywords
patterning
module
metal film
containing metal
deposition
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CN201510053668.7A
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CN105047541B (zh
Inventor
杰弗里·马克斯
理查德·A·戈奇奥
丹尼斯·M·豪斯曼
阿德里安·拉瓦伊
托马斯·尼斯利
斯利士·K·雷迪
巴德里·N·瓦拉达拉简
阿尔图尔·科利奇
乔治·安德鲁·安东内利
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Lam Research Corp
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Lam Research Corp
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Priority to CN201810783756.6A priority Critical patent/CN109216170A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1813—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by radiant energy
    • C23C18/182—Radiation, e.g. UV, laser
    • G—PHYSICS
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    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
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    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G—PHYSICS
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01—ELECTRIC ELEMENTS
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Abstract

本发明涉及结合真空的硬掩模工艺和装置，具体而言，用于形成金属硬掩模的结合真空的无光致抗蚀剂的方法和装置可以提供低于30纳米图案的分辨率。在半导体衬底上沉积对图案化剂敏感的含金属(例如，金属盐或有机金属化合物)膜。含金属膜然后通过在真空环境下暴露于图案化剂而被直接图案化(即，不使用光致抗蚀剂)，从而形成所述金属掩模。例如，所述含金属膜是感光性的，图案化使用低于30nm波长的光的光刻(诸如EUV光刻)来进行。

Description

结合真空的硬掩模工艺和装置
相关申请的交叉引用
本申请要求于2014年1月31日提交的、名称为“VACUUM-INTEGRATEDHARDMASKPROCESSES”的美国临时专利申请No.61/934,514的优先权，在此通过参考引入其全部内容并用于所有目的。
技术领域
本发明总体涉及半导体处理领域。具体地，本发明涉及用于形成金属硬掩模而不使用光致抗蚀剂的结合真空的工艺。
背景技术
在半导体处理中膜的图案化在半导体的生产和制造中往往是关键步骤。图案化包括光刻。在常规的光刻中，如193nm的光刻，图案通过下列步骤印刻：通过从光子源发射光子到掩模并将图案印在感光性光致抗蚀剂上，从而造成光致抗蚀剂中的化学反应，在显影之后，去除光致抗蚀剂的某些部分以形成图案。
先进的技术节点(如国际半导体技术发展路线图所定义)包括节点22纳米、16纳米、以及小于16纳米。在16纳米节点中，例如，在镶嵌结构中典型的通孔或线的宽度通常不超过约30纳米。先进半导体集成电路(IC)和其它器件的特征的尺寸缩放推动光刻提高分辨率。
发明内容
本发明的方面涉及用于形成金属硬掩模的结合真空的无光致抗蚀剂的方法和装置。这样的方法和装置可以提供低于30纳米的图案化分辨率。通常，在半导体衬底沉积含金属(例如，金属盐或有机金属化合物)膜，该含金属膜对例如光子、电子、质子、离子或中性物质之类图案化剂敏感，使得所述膜可通过暴露于这些物质中的一种进行图案化。然后通过在真空环境中暴露于图案化剂将含金属膜直接图案化(即，不使用光致抗蚀剂)，以形成金属掩模。例如，所述含金属膜是感光性的，图案化使用光学光刻(诸如EUV光刻)进行。
在一种实施方案中，在半导体衬底上沉积EUV敏感含金属膜。然后含金属膜通过在真空气氛中EUV曝光而被直接图案化，从而形成金属硬掩模。以这种方式，提供了将膜形成(冷凝/沉积)和光学光刻的步骤结合的结合真空的金属硬掩模工艺和相关的结合真空的硬件，导致EUV光刻(EUVL)性能大大改善-例如线边缘粗糙度降低。通过使用含金属的硬掩模，并通过使用EUV光子通量直接图案化含金属膜，该方法完全不需要光致抗蚀剂。
在另一实施方案中，用于进行无光致抗蚀剂的金属硬掩模形成的装置可以结合真空以进行所描述的工艺。该装置包括含金属膜沉积模块，含金属膜图案化模块，以及连接所述沉积模块和所述图案化模块的真空传送模块。
在下文将参照有关附图更加详细地说明本发明的这些特征和优点以及其它特征和优点。
附图说明
图1A-E示出了用于结合真空的无光致抗蚀剂的硬掩模形成工艺的代表性的工艺流程。
图2提供使用激励的Sn液滴的EUV源的发光光谱。
图3描绘了半导体工艺集群结构体系，其具有与真空传送模块接口的金属沉积模块和图案化模块，适合于实施本文中所描述的结合真空的工艺。
具体实施方式
现在将详细地参考本发明的具体实施方式。具体实施方式的实例示于附图中。虽然本发明将结合这些具体实施方式描述，但应当理解，这并不意味着将本发明限制于这些具体实施方式。相反，它旨在覆盖可以被包括在本发明的精神和范围内的替换、修改和等同方案。在以下的描述中，许多具体细节被阐述以便提供本发明的充分理解。本发明可以在没有这些具体细节的一些或全部的情况下实施。在其他实例中，公知的处理操作未被详细描述，以便不会不必要地混淆本发明。
介绍
极紫外(EUV)光刻技术可通过调节到用目前的光刻方法可达到的较小的成像源的波长从而延伸光刻技术超越它的光学限制以图案化小的关键尺寸的特征。约13.5nm的波长的EUV光源可用于前缘光刻工具，也称为扫描器。极紫外辐射在包括石英和水蒸汽的大范围的固体和流体材料中被强烈吸收，并且在真空下操作也如此。
EUV光刻通常利用使用常规的光致抗蚀剂工艺图案化的有机硬掩模(例如，PECVD非晶氢化碳可灰化的硬掩模)。在光致抗蚀剂曝光期间，EUV辐射被吸收在抗蚀剂以及下方的衬底中，产生高能光电子(约100电子伏)，并进而产生侧向扩散几纳米的低能二次电子(约10电子伏特)。这些电子增加在抗蚀剂中化学反应的程度，从而提高其EUV剂量的灵敏度。然而，性质上是随机的二次电子图案被叠加在光学图像上。这种不必要的二次电子曝光导致分辨率的损失、在图案化的抗蚀剂中可观察到线边缘粗糙度(LER)变化和线宽变化。在随后的图案转印蚀刻过程中这些缺陷被复制到要图案化的材料中。
不同于如光致抗蚀剂之类绝缘体，金属不容易受到二次电子曝光效果的影响，因为二次电子可以通过与传导电子一起散射很快失去能量并热能化。用于这种过程的合适的金属元素可以包括但不限于：铝、银、钯、铂、铑、钌、铱、钴、钌、锰、镍、铜、铪、钽、钨、镓、锗、锡、锑，或它们的任意组合。
然而，在用于将覆盖金属膜图案化成掩模的光致抗蚀剂中的电子散射仍会导致不可接受的影响，如LER。
公开了结合膜形成(沉积/冷凝)与光学光刻的结合真空的金属硬掩模工艺和相关的结合真空的硬件，导致EUV光刻(EUVL)性能大大改善-例如线边缘粗糙度降低。通过使用含金属的硬掩模膜，并通过使用EUV光子通量直接图案化含金属膜，该工艺完全避免了对光致抗蚀剂的需求。
在各种实施方式中，沉积(例如，冷凝)工艺(例如，在如Lam之类PECVD工具中进行的ALD或MOCVD)可以被用于形成含金属膜薄膜，这种含金属膜如光敏的金属盐或含金属的有机化合物(有机金属化合物)，其在EUV(例如，在10-20纳米的数量级的波长)中，例如在EUVL光源(例如，13.5纳米＝91.8电子伏特)的波长下，具有强的吸收性。该膜一经EUV曝光就光分解并形成金属掩模，该金属掩模在随后的蚀刻过程中是图案传输层(例如，在导体蚀刻工具中，如Lam)。
含金属膜可在集成有光刻平台(例如，晶片步进机，如荷兰费尔德霍芬的ASML提供TWINSCANNXE：平台)的室中沉积并在真空下传送，以便在曝光之前不发生反应。与光刻工具集成是通过以下事实促进的：考虑到由周围的气体(如H2O，O2等)对入射光子的强的光吸收，EUVL也需要大大降低的压强。
在一些实施方式中，如果因为光学或机械原因需要，则可以在EUV曝光/分解步骤之后进行选择性的膜沉积，以增加掩模材料的厚度；这种工艺被称为图案扩增。在这样的背景下来看，初始的硬掩模然后用作在其上形成最终掩模的种子层，类似于使用用于无电(ELD)或电化学(ECD)沉积的金属籽晶层。
结合真空的无光致抗蚀剂金属硬掩模形成工艺
图1A-E示出了用于结合真空的无光致抗蚀剂的硬掩模形成工艺的代表性的工艺流程。通常，对例如光子、电子、质子、离子或中性物质之类图案化剂敏感的含金属膜可通过暴露于这些物质中的一种进行图案化，在半导体衬底上沉积该含金属膜。然后，含金属膜通过在真空环境下暴露于图案化剂而被直接图案化(即，不使用光致抗蚀剂)，从而形成金属掩模。本说明书中主要提及由极紫外光刻(EUV光刻(EUVL)，特别是具有采用激励的锡液滴的EUV源的EUVL)图案化的含金属膜，特别是其中的金属是锡的含金属膜。这样的膜在本文中称为EUV敏感膜。然而，应当理解，其他包括不同的含金属膜和图案化剂/技术的实施方案是可能的。
合乎期望的硬掩模金属将是强有力的吸收体并将有相对宽的吸收曲线、高熔点、低延展性/高物理稳定性并容易地沉积。为了本公开的目的，需要注意的是，发射给定能量的光子的材料也将吸收具有该能量的光子。强烈被吸收光将导致所需分解或以其他方式将使膜敏感，以使暴露区可以用热、湿化学过程等去除。图2提供了使用激励的Sn液滴的EUV源的发光光谱。见，R.W.Coon等人，“ComparisonofEUVspectralandionemissionfeaturesfromlaserproducedSnandLiplasmas”，Proc.OfSPIEVol.763673636-1(2010)；R.C.Spitzer,等人,“Conversionefficienciesfromlaser-producedplasmasintheextremeultravioletregion”,79J.Appl.Phys.,2251(1996)；以及H.C.Gerritsen等人,“Laser-generatedplasmaassoftx-raysource”,J.Appl.Phys.592337(1986)，在此就其涉及各种金属的发射/吸收特性的公开内容通过引用并入本文。所发射的光子为约13.5纳米或91.8电子伏特。因此，锡是用于这种应用的理想的硬掩模金属。
参照图1A，示出待图案化的半导体衬底100。在典型的例子中，半导体衬底100是包括部分形成的集成电路的硅晶片。
图1B示出了含金属膜102，其对沉积在半导体衬底100上的图案化剂敏感。含金属膜可以是对暴露于图案化剂敏感的金属盐(例如金属卤化物)或有机金属化合物，使得含金属膜被分解成碱金属或呈现出对随后的显影工艺敏感。合适的图案化剂可以是光子、电子、质子、离子或中性物质，使得所述含金属膜102可通过暴露于这些物质中的一种经由分解成碱金属或呈现对随后的显影工艺敏感而被图案化。如下面进一步说明的，有效的金属和图案化剂组合的一个具体的实例是通过EUV光刻图案化的沉积为金属卤化物(例如，SnBr4)或有机金属(例如，Sn(CH3)4)的Sn。在一般情况下，在沉积之前，半导体衬底100被放置在反应器室中用于在真空下沉积含金属膜。
含金属膜102覆盖层可以通过从适当的前体(例如，在非等离子体CVD反应器，例如可从加州佛利蒙市的朗姆研究公司购得的CVD工具)冷凝来形成。例如，锡溴化物，SnBr4，具有205℃的标准沸点和在760乇下的31℃的熔点，在10℃蒸气压为10乇。它可以冷凝到衬底上以形成固态SnBr4膜，厚度依赖于曝光时间和衬底温度，例如为约5至200纳米，例如10纳米。这种经由冷凝的沉积的合适的工艺条件包括介于约0和30℃之间的沉积温度，例如约20℃，和小于20乇的反应器压强，例如在20℃下维持14和15乇之间。保持在介于约100和1000sccm之间的前体流率使得能控制沉积速率。
Sn金属的替代来源可以是有机金属。例如，四甲基锡(Sn(CH3)4)具有75℃的标准沸点和在760乇的-54℃的熔点。它也可以被冷凝在衬底上，形成固态的(Sn(CH3)4)膜，厚度依赖于曝光时间和衬底温度，例如为约5至200埃，例如100埃。该经由冷凝的沉积的合适的工艺条件包括介于约-54℃至30℃之间，例如约20℃的沉积温度，和小于20乇的反应器压强，例如维持在约1乇在20℃下。保持在介于约100和1000sccm之间的前体流率使得能控制沉积速率。
用于形成金属掩模的另一种合适的金属是铪(Hf)。氯化铪，HfCl4(在190℃下，1乇的蒸气压，具有432℃的熔点)可以冷凝到衬底上以形成固态的HfCl4晶体膜，厚度取决于曝光时间和衬底温度，例如约50至2000nm，例如，1000nm。该通过冷凝的沉积的合适的工艺条件包括介于约0至300℃之间的沉积温度，例如约100℃，以及小于10乇的反应器压强，例如保持在100℃下介于0.1至1乇之间。保持在介于约10和100sccm之间的前体流率使得能控制沉积速率。
为了防止由于水蒸气造成的劣化，在真空环境下进行含Sn膜和含Hf膜的形成和传送。然后，所形成的膜传送至EUV图案化工具并通过无需使用光致抗蚀剂的直接曝光进行图案化，如图1C-D所示。
应当注意的是，EUVL工具通常相比于沉积工具在更高的真空下操作。如果是这种情况的话，合乎理想的是提高在从沉积传送到图案化工具的过程中的衬底的环境真空度，以允许衬底和沉积的含金属膜在进入图案化工具之前脱气。这使得图案化工具的光学器件不受到衬底脱气的污染。
参照图1C，对于通过EUVL图案化的金属卤化物Sn系含金属膜，分解化学过程按下式进行：
SnBr4→Sn+2Br2.
光子直接分解SnBr4成Sn(锡金属)和溴气(Br2)。可替代地，反应物X2(例如，其中X为Cl、I或H)可用于促进反应途径SnBr4+X2→SnX4+2Br2，通过光分解最终形成Sn，特别是其中SnX4比易凝结的SnBr4较容易光激活。在两种情况下，副产物(Br2)和反应物(X2)需要控制，如保持真空。
对于通过EUVL图案化的有机金属Sn系含金属膜，光子直接分解Sn(CH3)4成Sn(锡金属)和乙烷气体，分解化学过程按下式进行：
Sn(CH3)4→Sn+2C2H6.
对于通过EUVL图案化的金属卤化物Hf系含金属膜，分解化学过程按下式进行：
HfCl4→Hf+2Cl2.
光子直接分解HfCl4成Hf金属和氯气(Cl2)。替代地，反应物X2(例如，其中X为Br、I或H)可以用于促进反应途径HfCl4+X2→HfX4+2Cl2，通过光分解最终形成Hf，特别是其中HfX4比易凝结的HfCl4较容易光激活。在两种情况下，副产物(Cl2)和反应物(X2)需要密闭度，如真空。
如图1C所示，图案化导致金属掩模的暴露的含金属膜区域102a和要通过图案显影去除的材料的未暴露区域102b。
参照图1D，该图案随后可显影。图案的显影可通过下述方式而简单地发生：加热衬底以挥发含金属膜的未暴露区域102b，使得仅暴露的区域102a保持为完全成形的金属掩模。应当注意的是，因为将形成热稳定和环境稳定的图案化的金属掩模，所以这种图案显影操作可不需要结合真空。在图案化工具之外进行图案显影也可能合乎期望，以避免用含金属膜分解的任何不相容的副产物污染该工具的光学器件。
参照图1E，作为可选的步骤，可以进行图案扩增。例如可以在图1C和/或1D中所描绘的操作之后，在图案化的衬底上执行选择性ALD或无电沉积(ELD)，从而用额外的选择性沉积金属106增加该金属掩模的厚度。这可以有用于减少掩模的光传输，或使其机械上更加稳固。例如，通过无电沉积工艺的调整可以完成这样的扩增，例如在美国专利No.6,911,067，No.6,794,288，No.6,902,605和No.4,935,312中所描述的，其公开内容在这方面通过引用并入本文。
例如，以这种方式初始1nm的籽晶可以被放大到10nm。如参照图1D所讨论的图案显影，这种操作可以不需要结合真空，因为在扩增之前热稳定和环境稳定的图案化的金属掩模已经形成。
替代的工艺实施方式
作为金属盐或有机金属含金属膜沉积的替代方案，含金属的EUV敏感膜可以通过有机金属CVD的多步骤工艺用合适的前体(例如，在非等离子体CVD反应器中，诸如可以从加州佛利蒙市的朗姆(Lam)研究公司购得的CVD工具或PECVD反应器，例如PECVD工具)沉积。例如，烷基和氨基的前体的等离子体沉积，诸如CH4/H2等离子体沉积后进行氨(NH3/H2)等离子体沉积，可在半导体衬底上产生氨基丙基三乙氧基硅烷(APTES)的氨基官能化的自组装单层(SAM)。这样的胺终端表面使得能够保形无电沉积(ELD)。然后SAM可以被输送到EUV图案化工具并被图案化。例如根据在本领域中已知的方法通过ELD，例如通过PdCl2/H2O溶液曝光，以提供Pd催化剂，随后通过Ni或Co的ELD，然后铜(Cu)的ELD，在给定的参数的情况下，使该图案化的SAM选择性生长，导致金属基掩模形成，而无需使用光致抗蚀剂。为此目的，这样的基于SAM的方法也可用于作为参考图1E描述的ELD技术的替代方案的图案扩增。
还应当注意的是，虽然本公开主要引用EUVL用作为图形化技术，但替代的实施方式可以使用电子、离子或中性物质的聚焦束以直接将图案刻写到覆盖掩模上，这些步骤也是在真空中进行的。如果副产物凝结于EUVL系统的反射光学器件，则可以使用原位室清洁。
装置
图3描绘了具有与真空传送模块接口的结合真空的金属沉积和图案化模块的半导体工艺集群工具结构体系，其适合于执行本文所描述的结合真空的工艺。在多个存储设施中“传送”晶片的传送模块和处理模块的配置可以被称为“集群工具结构”系统。按照特定工艺的要求，金属沉积模块和图案化模块是结合真空的。真空传送模块(VTM)338与可以被单独优化以执行各种制造工艺的四个处理模块320a-320d接口。举例而言，处理模块320a-320d可被实施来执行冷凝、沉积、蒸发、ELD、蚀刻，和/或其它半导体工艺。例如，模块320a可以是适于进行如本文所述的含金属膜的沉积的非等离子体CVD反应器，例如可从加州佛利蒙市的朗姆研究公司购得的CVD工具。模块320b可以是PECVD工具，如Lam但是应当理解的是，该图不一定按比例绘制。
气锁342和346，也被称为装载锁或传送模块，其与VTM338和图案化模块340接口。例如，合适的图案化模块可以是由荷兰费尔德霍芬的ASML公司提供的TWINSCANNXE：平台。这个工具结构体系允许工件(如具有沉积的含金属膜的衬底)在真空下被传输，以便在暴露之前不发生反应。沉积模块与光刻工具集成是通过以下事实促进的：考虑到由周围的气体(如H2O，O2等)对入射光子的强的光吸收，EUVL也需要大大降低的压强。
气锁342可以是“出”装载锁，指的是将衬底从服务于沉积模块620a的VTM338传输出来到达图案化模块340，并且气锁346可以是“进”装载锁，指的是将衬底从图案化模块340传输回进到VTM338。进装载锁346也可提供到所述工具的外部的用于衬底进出的接口。每个处理模块具有使模块接口到VTM338的刻面。例如，沉积工艺模块320a具有刻面336。在每个刻面内部，传感器，例如，如图所示传感器1-18，用于当晶片626在各站之间移动时检测晶片626的通过。图案化模块340以及气锁342和346可以被类似地配备有其他刻面和传感器(未示出)。
主VTM机械手322在包括气锁342和346的模块之间传送晶片326。在一个实施方式中，机械手322具有一个臂，在另一实施方式中，机械手322具有两个臂，每个臂具有端部执行器324以拾取晶片(例如晶片326)用于运输。前端机械手344，用于将晶片326从出气锁342传输到图案化模块340，从图案化模块340传输进入进气锁346。前端机械手344还可以在进装载锁和工具的用于衬底进出的外部之间传输晶片326。因为进气锁模块346具有将大气与真空之间的环境相匹配的能力，所以晶片326能够在不被损坏的情况下在两种压强环境之间移动。
应当注意的是，EUVL工具通常比沉积工具在更高的真空下工作。如果是这种情况，合乎期望的是在从沉积到图案化工具的传输过程中提高衬底的环境真空，以允许在衬底和沉积的含金属膜进入图案化工具之前进行脱气。出气锁342可以通过将传输的晶片保持在不高于图案化模块340中的压强的较低的压强下持续一段时间以及排出任何抽气来提供这个功能，以使图案化工具340的光学元件不受到来自衬底抽气的污染。抽气出气锁的合适的压强不大于1E-8乇。
在一些实施方式中，系统控制器650(其可以包括一个或多个物理或逻辑控制器)控制群集工具和/或它的单独的模块的操作的部分或全部。应当注意的是，控制器可以相对于集群结构体系是本地的，或可以位于生产工厂中的集群结构体系的外部，或在远程位置并通过网络连接到集群结构体系。系统控制器650可以包括一个或多个存储器设备和一个或多个处理器。该处理器可以包括中央处理单元(CPU)或计算机、模拟和/或数字输入/输出连接，步进电机控制器板、以及其他类似部件。用于执行适当的控制操作的指令在处理器上执行。这些指令可以存储在与控制器相关联的存储器设备，或者它们可以通过网络提供。在某些实施方式中，系统控制器执行系统控制软件。
该系统控制软件可以包括用于控制工具或模块操作的任何方面的数量和/或应用的时序的指令。系统控制软件可以以任何合适的方式进行配置。例如，可以编写各种处理工具组件子程序或控制的对象，以控制进行各种处理工具工艺所需要的处理工具组件的操作。系统控制软件可以以任何合适的计算可读编程语言进行编码。在一些实施方式中，系统控制软件包括用于控制上述的各种参数的输入/输出控制(IOC)的排序指令。例如，半导体制造过程的各阶段可包括用于由系统控制器执行的一个或多个指令。例如，设定用于冷凝、沉积、蒸发、图案化和/或蚀刻阶段的工艺条件的指令可以被包括在相应的配方阶段中。
结论
本文所述的结合真空的膜沉积和光刻工艺及装置提供EUV敏感金属膜沉积，并随后在真空环境中通过EUV曝光直接图案化，以防止它们的分解或劣化。EUVL是在真空中完成的，以避免入射的13.5nm的光通量因受到环境气体的光吸收而劣化。其中描述结合真空的硬掩模工艺的优点尤其是：EUV系统的真空操作开辟了使用对氧和水分敏感的化合物的可能性；在装置中结合真空的沉积系统与EUV系统使得能够使用这些材料。金属前体的光分解产生非线性反应，其中光分解通过金属膜的增加的吸收而增强。金属在高能量的二次电子的热化方面比光致抗蚀剂好，从而改善对比度或LER。直接使用金属膜作为掩模或用图案扩增允许非常薄的膜，并减少所需的曝光时间。对于蚀刻来说金属膜是较好的硬掩模，并从掩模的角度来说减少了所需的厚度。此外，按照本文中所描述工艺可以继续进行与EUV真空和光学元件相容的材料、具有用于金属沉积的适当剂量阈值的有机金属前体、以及具有多个光分解事件以消除在一定空间中的成核点的成核膜的进一步的发展和优化。
应当理解，本文所述的示例和实施方式仅用于说明性的目的，并且根据所述的示例和实施方式的各种修改或变化，将启发本领域的技术人员。虽然为了清楚起见省略了各种细节，但可以实现各种设计替代方案。因此，这些实施例应被认为是说明性的而非限制性的，并且本发明并不限于本文给出的细节，而是可以在所附权利要求的范围内进行修改。

Claims (21)

1.一种形成金属硬掩模的无光致抗蚀剂的方法，其包括：
在半导体衬底上沉积EUV敏感的含金属膜；以及
在真空环境中通过EUV曝光直接图案化所述含金属膜以形成所述金属硬掩模。
2.根据权利要求1所述的方法，其中，所述含金属膜是金属盐。
3.根据权利要求2所述的方法，其中，所述金属盐是金属卤化物。
4.根据权利要求3所述的方法，其中，所述金属是锡(Sn)。
5.根据权利要求3所述的方法，其中，所述金属是铪(Hf)。
6.根据权利要求1所述的方法，其中，所述含金属膜是有机金属化合物。
7.根据权利要求6所述的方法，其中，所述有机金属化合物的所述金属是锡(Sn)。
8.根据权利要求1所述的方法，其中，所述半导体衬底是包括部分形成的集成电路的硅晶片，所述方法还包括：
在所述沉积之前，提供所述半导体衬底在第一反应器室中用于沉积含金属膜；和
在所述沉积之后，在真空下将所述衬底传送到光刻处理室以进行图案化。
9.根据权利要求8所述的方法，其还包括在进入所述光刻处理室之前，对所述衬底除气。
10.根据权利要求9所述的方法，其中，所述除气包括降低所述衬底周围的压强至不大于1E-8乇。
11.根据权利要求1所述的方法，其还包括通过在所述金属硬掩模上选择性沉积进行的图案扩增。
12.根据权利要求11所述的方法，其中，所述选择性沉积包括无电沉积。
13.一种形成金属硬掩模的无光致抗蚀剂的方法，其包括：
在半导体衬底上沉积对包含光子、电子、质子、离子或中性物质的图案化剂敏感的含金属膜，使得所述膜能通过暴露于这些物质中的一种被图案化；以及
通过在真空环境中暴露于所述图案化剂直接图案化所述含金属膜。
14.根据权利要求13所述的方法，其中：
所述含金属膜是感光性的；以及
所述图案化是利用光学光刻进行的。
15.根据权利要求14所述的方法，其中，所述光学光刻是EUV光刻。
16.一种用于进行无光致抗蚀剂的金属硬掩模的形成的装置，所述装置包括：
含金属膜沉积模块；
含金属膜图案化模块；
连接所述沉积模块和所述图案化模块的真空传送模块。
17.根据权利要求16所述的装置，其中：
所述沉积模块包括用于沉积感光性金属卤化物膜或有机金属化合物膜的反应器室；以及
所述图案化模块包括具有低于30nm的波长的辐射源的光刻工具。
18.根据权利要求17所述的装置，其中，所述图案化模块是EUV光刻工具。
19.根据权利要求17所述的装置，其中，所述图案化模块具有选自由光子、电子、质子、离子和中性物质组成的组中的图案化剂的源，使得所述含金属膜能通过暴露于所述图案化剂进行图案化。
20.根据权利要求17所述的装置，其还包括用于将衬底从所述图案化模块传送到所述真空传送模块的入装载锁，以及用于将衬底从所述真空传送模块传送到所述图形化模块的出装载锁；且其中所述出装载锁用作除气模块。
21.根据权利要求17所述的装置，其还包括控制器，该控制器包括用于进行无光致抗蚀剂的金属硬掩模形成的指令，所述指令包括用于以下操作的指令：
在所述含金属膜沉积模块中，在半导体衬底上沉积EUV敏感的含金属膜；
将所述衬底在真空下传送到所述含金属膜图案化模块；以及
在所述含金属膜图案化模块中，在真空环境中通过EUV曝光直接图案化所述含金属膜以形成所述金属硬掩模。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107365958A (zh) * 2017-07-13 2017-11-21 上海天马有机发光显示技术有限公司 金属掩膜板的制备方法
CN107689322A (zh) * 2016-08-05 2018-02-13 台湾积体电路制造股份有限公司 制造一半导体元件的方法
CN113039486A (zh) * 2018-11-14 2021-06-25 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
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Families Citing this family (274)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
KR102306612B1 (ko) 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
KR20230156842A (ko) 2014-10-23 2023-11-14 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
EP4089482A1 (en) * 2015-10-13 2022-11-16 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10224202B2 (en) * 2016-03-31 2019-03-05 Tokyo Electron Limited Forming method of hard mask, forming apparatus of hard mask and recording medium
JP6762831B2 (ja) * 2016-03-31 2020-09-30 東京エレクトロン株式会社 ハードマスクの形成方法、ハードマスクの形成装置及び記憶媒体
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859127B1 (en) * 2016-06-10 2018-01-02 Lam Research Corporation Line edge roughness improvement with photon-assisted plasma process
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US20180135183A1 (en) * 2016-11-13 2018-05-17 Applied Materials, Inc. Surface Treatment For EUV Lithography
CN106444934B (zh) * 2016-11-14 2019-02-19 北京北方华创微电子装备有限公司 一种基于状态管理的工艺控制系统调度装置及方法
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10163633B2 (en) * 2017-03-13 2018-12-25 Globalfoundries Inc. Non-mandrel cut formation
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US10199270B2 (en) * 2017-05-25 2019-02-05 Globalfoundries Inc. Multi-directional self-aligned multiple patterning
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
EP3503164A1 (en) * 2017-12-21 2019-06-26 IMEC vzw Selective deposition of metal-organic frameworks
US10109517B1 (en) 2018-01-10 2018-10-23 Lam Research Corporation Rotational indexer with additional rotational axes
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
JP2021529254A (ja) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
TW202016279A (zh) 2018-10-17 2020-05-01 美商英培雅股份有限公司 圖案化有機金屬光阻及圖案化的方法
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TW202037745A (zh) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成裝置結構之方法、其所形成之結構及施行其之系統
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR102638425B1 (ko) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치
JP2020136677A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
JP2020133004A (ja) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材を処理するための基材処理装置および方法
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (zh) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
CN116705595A (zh) 2020-01-15 2023-09-05 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
KR20220132638A (ko) * 2020-01-31 2022-09-30 램 리써치 코포레이션 합금 막 에칭
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
US20230031955A1 (en) * 2020-02-04 2023-02-02 Lam Research Corporation Post application/exposure treatments to improve dry development performance of metal-containing euv resist
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
WO2021178302A1 (en) 2020-03-02 2021-09-10 Inpria Corporation Process environment for inorganic resist patterning
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
WO2021202198A1 (en) * 2020-03-31 2021-10-07 Lam Research Corporation Apparatus and process for euv dry resist sensitization by gas phase infusion of a sensitizer
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210137276A (ko) * 2020-05-07 2021-11-17 삼성전자주식회사 반도체 소자
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202200837A (zh) 2020-05-22 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基材上形成薄膜之反應系統
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
CN115699255A (zh) * 2020-07-02 2023-02-03 应用材料公司 用于光刻应用的光刻胶层上的碳的选择性沉积
CN115004110A (zh) * 2020-07-07 2022-09-02 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
CN116171403A (zh) * 2020-07-17 2023-05-26 朗姆研究公司 来自Sn(II)前体的光致抗蚀剂
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
JP2023534961A (ja) * 2020-07-17 2023-08-15 ラム リサーチ コーポレーション タンタルを含むフォトレジスト
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US11886120B2 (en) 2020-07-21 2024-01-30 Applied Materials, Inc. Deposition of semiconductor integration films
US11562904B2 (en) 2020-07-21 2023-01-24 Applied Materials, Inc. Deposition of semiconductor integration films
TW202212623A (zh) 2020-08-26 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
KR20230113400A (ko) * 2020-12-08 2023-07-28 램 리써치 코포레이션 유기 증기를 사용한 포토레지스트 현상
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
JPWO2022209816A1 (zh) * 2021-04-01 2022-10-06
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US20230350303A1 (en) * 2022-04-27 2023-11-02 Tokyo Electron Limited Dry Developing Metal-Free Photoresists
WO2024070535A1 (ja) * 2022-09-28 2024-04-04 Jsr株式会社 レジストパターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162577A (en) * 1995-09-21 2000-12-19 Felter; T. E. Method for extreme ultraviolet lithography
JP2003213001A (ja) * 2001-11-13 2003-07-30 Sekisui Chem Co Ltd 光反応性組成物
US20060068173A1 (en) * 2004-09-30 2006-03-30 Ebara Corporation Methods for forming and patterning of metallic films
US20090208880A1 (en) * 2008-02-20 2009-08-20 Applied Materials, Inc. Process sequence for formation of patterned hard mask film (rfp) without need for photoresist or dry etch
TW201241555A (en) * 2011-02-15 2012-10-16 Shinetsu Chemical Co Resist composition and patterning process

Family Cites Families (150)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576755A (en) * 1964-09-24 1971-04-27 American Cyanamid Co Photochromism in plastic film containing inorganic materials
US3442648A (en) * 1965-06-16 1969-05-06 American Cyanamid Co Photographic dodging method
US3513010A (en) * 1966-07-11 1970-05-19 Kalvar Corp Conversion foil
US3529963A (en) * 1966-08-23 1970-09-22 Du Pont Image-yielding elements and processes
US3720515A (en) * 1971-10-20 1973-03-13 Trw Inc Microelectronic circuit production
US4241165A (en) * 1978-09-05 1980-12-23 Motorola, Inc. Plasma development process for photoresist
US4328298A (en) * 1979-06-27 1982-05-04 The Perkin-Elmer Corporation Process for manufacturing lithography masks
JPS60115222A (ja) * 1983-11-28 1985-06-21 Tokyo Ohka Kogyo Co Ltd 微細パタ−ン形成方法
JPH0778629B2 (ja) 1986-12-19 1995-08-23 ミノルタ株式会社 ポジ型レジスト膜及びそのレジストパターンの形成方法
US5077085A (en) * 1987-03-06 1991-12-31 Schnur Joel M High resolution metal patterning of ultra-thin films on solid substrates
US4834834A (en) * 1987-11-20 1989-05-30 Massachusetts Institute Of Technology Laser photochemical etching using surface halogenation
US4845053A (en) * 1988-01-25 1989-07-04 John Zajac Flame ashing process for stripping photoresist
US4940854A (en) * 1988-07-13 1990-07-10 Minnesota Mining And Manufacturing Company Organic thin film controlled molecular epitaxy
US5322765A (en) 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
GEP20002074B (en) * 1992-05-19 2000-05-10 Westaim Tech Inc Ca Modified Material and Method for its Production
EP0635884A1 (de) 1993-07-13 1995-01-25 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Grabens in einem Substrat und dessen Verwendung in der Smart-Power-Technologie
JP3654597B2 (ja) * 1993-07-15 2005-06-02 株式会社ルネサステクノロジ 製造システムおよび製造方法
JPH07106224A (ja) 1993-10-01 1995-04-21 Hitachi Ltd パターン形成方法
US5534312A (en) * 1994-11-14 1996-07-09 Simon Fraser University Method for directly depositing metal containing patterned films
US6261938B1 (en) * 1997-02-12 2001-07-17 Quantiscript, Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
WO1999004911A1 (en) * 1997-07-28 1999-02-04 Massachusetts Institute Of Technology Pyrolytic chemical vapor deposition of silicone films
US6290779B1 (en) 1998-06-12 2001-09-18 Tokyo Electron Limited Systems and methods for dry cleaning process chambers
US6348239B1 (en) * 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
WO2001059825A1 (en) 2000-02-08 2001-08-16 Matrix Integrated Systems, Inc. Method for removing photoresist and residues from semiconductor device surfaces
US20040191423A1 (en) * 2000-04-28 2004-09-30 Ruan Hai Xiong Methods for the deposition of silver and silver oxide films and patterned films
US20060001064A1 (en) 2000-04-28 2006-01-05 Hill Ross H Methods for the lithographic deposition of ferroelectric materials
KR100406174B1 (ko) 2000-06-15 2003-11-19 주식회사 하이닉스반도체 화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드
JP2002015971A (ja) * 2000-06-27 2002-01-18 Matsushita Electric Ind Co Ltd パターン形成方法及び半導体装置の製造装置
KR100398312B1 (ko) 2000-06-30 2003-09-19 한국과학기술원 유기금속을 함유하고 있는 노르보넨 단량체, 이들의고분자 중합체를 함유하는 포토레지스트, 및 그제조방법과, 포토레지스트 패턴 형성방법
US6797439B1 (en) * 2001-03-30 2004-09-28 Schott Lithotec Ag Photomask with back-side anti-reflective layer and method of manufacture
US6686132B2 (en) 2001-04-20 2004-02-03 The Regents Of The University Of California Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake
US6933673B2 (en) * 2001-04-27 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and process of manufacturing the same
US6926957B2 (en) 2001-06-29 2005-08-09 3M Innovative Properties Company Water-based ink-receptive coating
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
EP2189842B1 (en) * 2002-04-11 2017-08-23 Hoya Corporation Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
JP3806702B2 (ja) * 2002-04-11 2006-08-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
DE10219173A1 (de) * 2002-04-30 2003-11-20 Philips Intellectual Property Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung
KR101101698B1 (ko) * 2002-10-21 2011-12-30 나노잉크, 인크. 나노미터-수준으로 제어된 구조, 이의 제작을 위한 방법 및장치, 및 마스크 복구, 강화, 및 제작에의 적용
JP4153783B2 (ja) * 2002-12-09 2008-09-24 株式会社東芝 Ｘ線平面検出器
EP1609175A1 (en) 2003-03-31 2005-12-28 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
GB0323805D0 (en) * 2003-10-10 2003-11-12 Univ Southampton Synthesis of germanium sulphide and related compounds
US7307695B2 (en) * 2003-10-10 2007-12-11 Asml Netherlands B.V. Method and device for alignment of a substrate
US7126128B2 (en) * 2004-02-13 2006-10-24 Kabushiki Kaisha Toshiba Flat panel x-ray detector
JP2006253282A (ja) * 2005-03-09 2006-09-21 Ebara Corp 金属膜のパターン形成方法
US7885387B2 (en) * 2004-12-17 2011-02-08 Osaka University Extreme ultraviolet light and X-ray source target and manufacturing method thereof
KR100601979B1 (ko) 2004-12-30 2006-07-18 삼성전자주식회사 반도체 웨이퍼의 베이킹 장치
KR100607201B1 (ko) * 2005-01-04 2006-08-01 삼성전자주식회사 극자외선 리소그래피 공정에서 웨이퍼 상의 임계 치수편차를 보정하는 방법
US7365026B2 (en) 2005-02-01 2008-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. CxHy sacrificial layer for cu/low-k interconnects
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7482280B2 (en) 2005-08-15 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a lithography pattern
US7909960B2 (en) 2005-09-27 2011-03-22 Lam Research Corporation Apparatus and methods to remove films on bevel edge and backside of wafer
US8664124B2 (en) 2005-10-31 2014-03-04 Novellus Systems, Inc. Method for etching organic hardmasks
US20070117040A1 (en) 2005-11-21 2007-05-24 International Business Machines Corporation Water castable-water strippable top coats for 193 nm immersion lithography
US20110198756A1 (en) 2005-11-28 2011-08-18 Thenappan Ue Organometallic Precursors and Related Intermediates for Deposition Processes, Their Production and Methods of Use
JP2007207530A (ja) * 2006-01-31 2007-08-16 Toshiba Corp 異方性導電膜及びこれを用いたｘ線平面検出器、赤外線平面検出器及び表示装置
US7662718B2 (en) 2006-03-09 2010-02-16 Micron Technology, Inc. Trim process for critical dimension control for integrated circuits
US8664513B2 (en) * 2007-10-12 2014-03-04 OmniPV, Inc. Solar modules with enhanced efficiencies via use of spectral concentrators
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
KR100921932B1 (ko) 2007-10-25 2009-10-15 포항공과대학교 산학협력단 다원자분자를 이용한 패터닝방법
US7985513B2 (en) * 2008-03-18 2011-07-26 Advanced Micro Devices, Inc. Fluorine-passivated reticles for use in lithography and methods for fabricating the same
US20090286402A1 (en) 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
JP2009294439A (ja) * 2008-06-05 2009-12-17 Toshiba Corp レジストパターン形成方法
JP5171422B2 (ja) 2008-06-19 2013-03-27 ルネサスエレクトロニクス株式会社 感光性組成物、これを用いたパターン形成方法、半導体素子の製造方法
US20090321707A1 (en) 2008-06-25 2009-12-31 Matthew Metz Intersubstrate-dielectric nanolaminate layer for improved temperature stability of gate dielectric films
US20090325387A1 (en) 2008-06-26 2009-12-31 Applied Materials, Inc. Methods and apparatus for in-situ chamber dry clean during photomask plasma etching
KR20110050427A (ko) 2008-07-14 2011-05-13 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 ｅｕｖ 리소그래피용 반사형 마스크
KR20110046439A (ko) 2008-07-24 2011-05-04 코비오 인코포레이티드 알루미늄 잉크 및 이의 제조 방법, 알루미늄 잉크 증착 방법 및 알루미늄 잉크의 인쇄 및/또는 증착에 의해 형성된 필름
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
JP5193121B2 (ja) * 2009-04-17 2013-05-08 東京エレクトロン株式会社 レジスト塗布現像方法
US8114306B2 (en) 2009-05-22 2012-02-14 International Business Machines Corporation Method of forming sub-lithographic features using directed self-assembly of polymers
US20100304027A1 (en) * 2009-05-27 2010-12-02 Applied Materials, Inc. Substrate processing system and methods thereof
JP5682573B2 (ja) 2009-12-28 2015-03-11 旭硝子株式会社 感光性組成物、隔壁、カラーフィルタおよび有機ｅｌ素子
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
US8138097B1 (en) 2010-09-20 2012-03-20 Kabushiki Kaisha Toshiba Method for processing semiconductor structure and device based on the same
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
US8470711B2 (en) 2010-11-23 2013-06-25 International Business Machines Corporation Tone inversion with partial underlayer etch for semiconductor device formation
US8836082B2 (en) 2011-01-31 2014-09-16 Brewer Science Inc. Reversal lithography approach by selective deposition of nanoparticles
US8778816B2 (en) * 2011-02-04 2014-07-15 Applied Materials, Inc. In situ vapor phase surface activation of SiO2
US9281207B2 (en) * 2011-02-28 2016-03-08 Inpria Corporation Solution processible hardmasks for high resolution lithography
FR2975823B1 (fr) 2011-05-27 2014-11-21 Commissariat Energie Atomique Procede de realisation d'un motif a la surface d'un bloc d'un substrat utilisant des copolymeres a bloc
WO2012173699A1 (en) 2011-06-15 2012-12-20 Applied Materials, Inc. Methods and apparatus for performing multiple photoresist layer development and etching processes
KR102009869B1 (ko) 2011-07-08 2019-08-12 에이에스엠엘 네델란즈 비.브이. 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트
CN102610516B (zh) 2011-07-22 2015-01-21 上海华力微电子有限公司 一种提高光刻胶与金属/金属化合物表面之间粘附力的方法
WO2013078211A1 (en) 2011-11-21 2013-05-30 Brewer Science Inc. Assist layers for euv lithography
US8809994B2 (en) 2011-12-09 2014-08-19 International Business Machines Corporation Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate
US20130177847A1 (en) 2011-12-12 2013-07-11 Applied Materials, Inc. Photoresist for improved lithographic control
US8691476B2 (en) 2011-12-16 2014-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask and method for forming the same
SG193093A1 (en) * 2012-02-13 2013-09-30 Novellus Systems Inc Method for etching organic hardmasks
US8703386B2 (en) 2012-02-27 2014-04-22 International Business Machines Corporation Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
EP2851192A4 (en) * 2012-05-14 2015-12-23 Konica Minolta Inc GASPERRFILM, METHOD FOR THE PRODUCTION OF GASPERRFILMS AND ELECTRONIC DEVICE
SG195494A1 (en) 2012-05-18 2013-12-30 Novellus Systems Inc Carbon deposition-etch-ash gap fill process
SG2013083241A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Conformal film deposition for gapfill
US8969997B2 (en) 2012-11-14 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Isolation structures and methods of forming the same
US8927989B2 (en) 2012-11-28 2015-01-06 International Business Machines Corporation Voltage contrast inspection of deep trench isolation
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask
JP5913077B2 (ja) * 2012-12-18 2016-04-27 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
US9337068B2 (en) 2012-12-18 2016-05-10 Lam Research Corporation Oxygen-containing ceramic hard masks and associated wet-cleans
JP6134522B2 (ja) 2013-01-30 2017-05-24 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
US9607904B2 (en) * 2013-03-11 2017-03-28 Intermolecular, Inc. Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9223220B2 (en) 2013-03-12 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photo resist baking in lithography process
US10074544B2 (en) 2013-04-23 2018-09-11 Massachusetts Institute Of Technology Developer free positive tone lithography by thermal direct write
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
US9372402B2 (en) * 2013-09-13 2016-06-21 The Research Foundation For The State University Of New York Molecular organometallic resists for EUV
US9405204B2 (en) 2013-09-18 2016-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of overlay in extreme ultra-violet (EUV) lithography
JP5917477B2 (ja) 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
KR102306612B1 (ko) 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
US10685846B2 (en) 2014-05-16 2020-06-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor integrated circuit fabrication with pattern-reversing process
KR101989707B1 (ko) 2014-07-08 2019-06-14 도쿄엘렉트론가부시키가이샤 네거티브톤 현상제 겸용 포토레지스트 조성물 및 이용 방법
GB201412201D0 (en) * 2014-07-09 2014-08-20 Isis Innovation Two-step deposition process
KR20230156842A (ko) 2014-10-23 2023-11-14 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
US9609730B2 (en) 2014-11-12 2017-03-28 Lam Research Corporation Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas
US9551924B2 (en) * 2015-02-12 2017-01-24 International Business Machines Corporation Structure and method for fixing phase effects on EUV mask
CN107636852B (zh) 2015-03-09 2021-06-25 弗萨姆材料美国有限责任公司 用于沉积用作电阻随机存取存储器的多孔有机硅酸盐玻璃膜的方法
JP6404757B2 (ja) 2015-03-27 2018-10-17 信越化学工業株式会社 レジスト下層膜材料用重合体、レジスト下層膜材料、及びパターン形成方法
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US9829790B2 (en) 2015-06-08 2017-11-28 Applied Materials, Inc. Immersion field guided exposure and post-exposure bake process
US9659771B2 (en) 2015-06-11 2017-05-23 Applied Materials, Inc. Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning
US9922839B2 (en) 2015-06-23 2018-03-20 Lam Research Corporation Low roughness EUV lithography
WO2017002342A1 (ja) 2015-07-01 2017-01-05 パナソニックＩｐマネジメント株式会社 エアロゲルおよびそれを用いた部材とその製造方法
EP4089482A1 (en) 2015-10-13 2022-11-16 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
JP6603115B2 (ja) 2015-11-27 2019-11-06 信越化学工業株式会社 ケイ素含有縮合物、ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
US10503070B2 (en) 2015-12-10 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Photosensitive material and method of lithography
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
US10018920B2 (en) 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist
KR102394042B1 (ko) 2016-03-11 2022-05-03 인프리아 코포레이션 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법
WO2017198418A1 (en) 2016-05-19 2017-11-23 Asml Netherlands B.V. Resist compositions
WO2018004551A1 (en) 2016-06-28 2018-01-04 Intel Corporation Polysilane-, polygermane-, and polystannane-based materials for euv and ebeam lithography
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
KR20230166158A (ko) 2016-08-12 2023-12-06 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
US10755942B2 (en) 2016-11-02 2020-08-25 Massachusetts Institute Of Technology Method of forming topcoat for patterning
US9929012B1 (en) 2016-12-14 2018-03-27 International Business Machines Corporation Resist having tuned interface hardmask layer for EUV exposure
KR102047538B1 (ko) 2017-02-03 2019-11-21 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
US10176984B2 (en) 2017-02-14 2019-01-08 Lam Research Corporation Selective deposition of silicon oxide
US20180308687A1 (en) 2017-04-24 2018-10-25 Lam Research Corporation Euv photopatterning and selective deposition for negative pattern mask
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102634520B1 (ko) 2017-11-20 2024-02-06 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용
TW202348612A (zh) 2018-04-05 2023-12-16 美商英培雅股份有限公司 包含錫化合物的組合物及其應用
US10787466B2 (en) 2018-04-11 2020-09-29 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US11673903B2 (en) 2018-04-11 2023-06-13 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
JP2021523403A (ja) 2018-05-11 2021-09-02 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ｅｕｖパターン化可能ハードマスクを形成するための方法
JP7295891B2 (ja) 2018-06-21 2023-06-21 インプリア・コーポレイション モノアルキルスズアルコキシドの安定な溶液、並びにそれらの加水分解生成物及び縮合生成物
TW202016279A (zh) * 2018-10-17 2020-05-01 美商英培雅股份有限公司 圖案化有機金屬光阻及圖案化的方法
JP2022507368A (ja) 2018-11-14 2022-01-18 ラム リサーチ コーポレーション 次世代リソグラフィにおいて有用なハードマスクを作製する方法
US11966158B2 (en) 2019-01-30 2024-04-23 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with low metal contamination and/or particulate contamination, and corresponding methods
US11498934B2 (en) 2019-01-30 2022-11-15 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods
US20220308462A1 (en) 2019-06-27 2022-09-29 Lam Research Corporation Apparatus for photoresist dry deposition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162577A (en) * 1995-09-21 2000-12-19 Felter; T. E. Method for extreme ultraviolet lithography
JP2003213001A (ja) * 2001-11-13 2003-07-30 Sekisui Chem Co Ltd 光反応性組成物
US20060068173A1 (en) * 2004-09-30 2006-03-30 Ebara Corporation Methods for forming and patterning of metallic films
US20090208880A1 (en) * 2008-02-20 2009-08-20 Applied Materials, Inc. Process sequence for formation of patterned hard mask film (rfp) without need for photoresist or dry etch
TW201241555A (en) * 2011-02-15 2012-10-16 Shinetsu Chemical Co Resist composition and patterning process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107689322A (zh) * 2016-08-05 2018-02-13 台湾积体电路制造股份有限公司 制造一半导体元件的方法
CN107689322B (zh) * 2016-08-05 2021-07-16 台湾积体电路制造股份有限公司 制造一半导体元件的方法及其系统
CN107365958A (zh) * 2017-07-13 2017-11-21 上海天马有机发光显示技术有限公司 金属掩膜板的制备方法
CN113039486A (zh) * 2018-11-14 2021-06-25 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909A (zh) * 2018-12-20 2021-08-06 朗姆研究公司 抗蚀剂的干式显影

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US20200089104A1 (en) 2020-03-19
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US20150221519A1 (en) 2015-08-06
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US20180004083A1 (en) 2018-01-04
US20190094685A1 (en) 2019-03-28
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US9778561B2 (en) 2017-10-03
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