JP2021523403A - Euvパターン化可能ハードマスクを形成するための方法 - Google Patents
Euvパターン化可能ハードマスクを形成するための方法 Download PDFInfo
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- JP2021523403A JP2021523403A JP2020562160A JP2020562160A JP2021523403A JP 2021523403 A JP2021523403 A JP 2021523403A JP 2020562160 A JP2020562160 A JP 2020562160A JP 2020562160 A JP2020562160 A JP 2020562160A JP 2021523403 A JP2021523403 A JP 2021523403A
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- film
- euv
- organometallic
- exposed
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Images
Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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Abstract
【選択図】図2
Description
本出願は、2018年12月20日出願の米国仮出願第62/782,578号、および2018年5月11日出願の米国仮出願第62/670,644号の利益を主張する。上記出願の全ての開示は、参照として本明細書に援用される。
本技術は、EUV感光薄膜が基板上に堆積される方法を提供する。かかる膜は、後続のEUVリソグラフィおよび処理のためのレジストとして動作可能である。かかるEUV感光膜は、EUVに露光されると、低密度のM−OHに富む物質の金属原子に結合した嵩高いペンダント置換基の損失などの変化が起き、より高密度のM−O−M結合金属酸化物材料への架橋を可能にする。EUVパターニングによって、未露光領域に対して変化した物理的特性または化学的特性を有する膜領域が生成される。これらの特性は、未露光領域もしくは露光領域を溶解するため、または露光領域もしくは未露光領域に材料を選択的に堆積させるためなどの後続の処理で利用されてよい。いくつかの実施形態では、かかる後続処理が実施される条件下で、未露光膜は疎水性表面を有し、露光膜は親水性表面を有する(露光領域および未露光領域の親水性特性は相関関係にあるとされる)。例えば、材料の除去は、膜の化学組成、密度、および架橋における相違を利用することによって実施されてよい。除去は、以下にさらに説明されるウェット処理またはドライ処理によって行われてよい。
本技術の膜の堆積および処理のための例示的プロセスは、図2に示されている。いくつかの実施形態では、方法は、基板への膜の接着を向上させるための事前処理1を含む。EUV膜は、次に基板上に堆積2されてよい。
本技術は、堆積膜の一領域をEUV光に露光することによって膜がパターニングされる方法も提供する。図2をさらに参照すると、パターニング4は、膜の任意の露光後焼成3に続いてよい。かかるパターニングでは、EUV光は、被覆基板の1つ以上の領域に集光される。EUVへの露光は、通常、膜がEUV光に露光されない1つ以上の領域を含むように実施される。結果として生じた膜は、複数の露光領域および未露光領域を含んでよく、膜および基板の後続処理において基板への材料の追加または基板からの材料の除去によって形成される半導体デバイスのトランジスタまたは他のフィーチャの形成と一致するパターンを形成する。本明細書で有効なEUV装置および撮像方法は、当技術分野で周知の方法を含む。
EUVパターン化可能膜は、t−ブチル(ジメチルアミノ)スズを有機金属前駆体として、水蒸気を反反応剤として用いて、3つのシリコンウエハ基板上にCVDプロセスを用いて堆積される。基板および堆積チャンバ壁は、約70℃の温度で維持される。このプロセスは、約2トルの圧力で実行される。
EUVパターン化可能膜は、イソプロピルトリス(ジメチルアミノ)スズを有機金属前駆体として、水蒸気を反反応剤として用いて、2枚のシリコンウエハ基板上にCVDプロセスを用いて堆積される。2枚目のシリコンウエハは、50nmの非晶質炭素下地層を有する。基板および堆積チャンバ壁は、約70℃の温度で維持される。このプロセスは、約2トルの圧力で実行される。
EUVパターン化可能膜は、イソプロピルトリス(ジメチルアミノ)スズを有機金属前駆体として、水蒸気を反反応剤として用いて、シリコンウエハ基板上にCVDプロセスを用いて堆積される。シリコンウエハは、堆積より前に形成された50nmの深さのライン/スペーストポグラフィを有する。堆積条件は、例2で述べられたプロセスと同じである。
前述の説明は、本質的に単なる例示であり、本技術、その適用、または使用を限定する意図はない。広義の技術は、様々な形態で実施されうる。よって、本技術は特定の例を含むが、図面、明細書、および以下の特許請求の範囲を考察すると他の変更点が明らかになるため、本技術の真の範囲は、それほど限定されるべきでない。
本発明は、例えば、以下の形態によっても実現されてもよい。
[形態1]
基板の表面上にEUVパターン化可能膜を形成するための方法であって、
有機金属前駆体の蒸気流を反反応剤の蒸気流と混合させて重合有機金属材料を形成することと、
前記基板の前記表面上に前記有機金属材料を堆積させて、前記EUVパターン化可能膜を形成することと、
を含む、方法。
[形態2]
形態1に記載の方法であって、
前記有機金属前駆体は、式:M a R b L c を有し、Mは、1×10 7 cm 2 /mol以上の原子吸収断面積を有する金属であり、Rは、C n H 2n+1 などのアルキルであり、nは≧3であり、Lは、反反応剤と反応する配位子、イオン、または他の部分であり、a≧1であり、b≧1であり、c≧である、方法。
[形態3]
形態2に記載の方法であって、
Mは、スズ、ビスマス、アンチモン、およびこれらの組み合わせからなる群より選択され、Rは、i−プロピル、n−プロピル、t−ブチル、i−ブチル、n−ブチル、sec−ブチル、i−ペンチル、n−ペンチル、t−ペンチル、sec−ペンチル、およびこれらの混合物からなる群より選択され、Lは、アミン、アルコキシ、カルボン酸塩、ハロゲン、およびこれらの混合物からなる群より選択される、方法。
[形態4]
形態1または形態3に記載の方法であって、
前記有機金属前駆体は、t−ブチルトリス(ジメチルアミノ)スズ、i−ブチルトリス(ジメチルアミノ)スズ、n−ブチル(トリス)ジメチルアミノスズ、sec−ブチルトリス(ジメチルアミノ)スズ、i−プロピル(トリス)ジメチルアミノスズ、n−プロピル(トリス)ジメチルアミノスズ、および類似アルキル(トリス)(t−ブトキシ)スズ化合物である、方法。
[形態5]
形態1〜4のいずれか1項に記載の方法であって、
前記有機金属前駆体は、部分的にフッ素化されている、方法。
[形態6]
形態1〜5のいずれか1項に記載の方法であって、
前記反反応剤は、水、過酸化水素、ジヒドロキシアルコールまたはポリヒドロキシアルコール、硫化水素、二硫化水素、トリフルオロアセトアルデヒド一水和物、フッ化ジヒドロキシアルコールまたはフッ化ポリヒドロキシアルコール、およびフッ化グリコールからなる群より選択される、方法。
[形態7]
形態1〜6のいずれか1項に記載の方法であって、
前記混合および堆積は、連続化学気相堆積プロセスで実施される、方法。
[形態8]
形態1〜7のいずれか1項に記載の方法であって、
前記半導体基板は、下地トポグラフィフィーチャを備える、方法。
[形態9]
半導体基板の表面上にリソグラフィマスク前駆体を形成するための方法であって、
有機金属前駆体の蒸気流を反反応剤の蒸気流と混合させて重合有機金属材料を形成することと、
前記半導体基板の前記表面上に前記有機金属材料を堆積させて、EUVパターン化可能膜を形成することと、
任意で前記膜を加熱することと、
前記EUVパターン化可能膜がEUV光に露光されない未露光膜領域も含むように、前記EUVパターン化可能膜の一領域を前記EUV光に露光して露光膜領域を生成することと、
任意で前記EUVパターン化可能膜を加熱して、前記露光領域および前記未露光領域を含むマスク前駆体を形成することと、
を含む、方法。
[形態10]
形態9に記載の方法であって、
前記マスク前駆体の前記露光領域は、不溶性であり、前記マスク前駆体の前記未露光領域は、選択された溶剤において溶性である、方法。
[形態11]
形態10に記載の方法であって、さらに、
前記溶剤を用いて前記マスク前駆体の前記未露光領域を除去することを含む、方法。
[形態12]
形態9または形態10に記載の方法であって、
前記マスク前駆体の前記露光領域は、反応性表面部分を含む、方法。
[形態13]
形態12に記載の方法であって、さらに、
前記露光領域の前記表面上に副材料を選択的に堆積させることを含み、
溶解性コントラストまたはエッチング選択性は、前記露光領域と前記未露光領域との間で増加する、方法。
[形態14]
形態13に記載の方法であって、
前記副材料の前記堆積は、原子層堆積プロセスを用いて実施される、方法。
[形態15]
形態9または形態14に記載の方法であって、さらに、
前記露光後に前記EUVパターン化可能膜を乾式現像することを含む、方法。
[形態16]
形態9〜15のいずれか1項に記載の方法であって、
前記有機金属前駆体は、式:M a R b L c を有し、Mは、1×10 7 cm 2 /mol以上の原子吸収断面積を有する金属であり、Rは、C n H 2n+1 などのアルキルであり、nは≧3であり、Lは、反反応剤と反応する配位子、イオン、または他の部分であり、a≧1であり、b≧1であり、c≧1である、方法。
[形態17]
形態16に記載の方法であって、
Mは、スズ、ビスマス、アンチモン、およびこれらの組み合わせからなる群より選択され、Rは、i−プロピル、n−プロピル、t−ブチル、i−ブチル、n−ブチル、sec−ブチル、i−ペンチル、n−ペンチル、t−ペンチル、sec−ペンチル、およびこれらの混合物からなる群より選択され、Lは、アミン、アルコキシ、カルボン酸塩、ハロゲン、およびこれらの混合物からなる群より選択される、方法。
[形態18]
形態9〜17のいずれか1項に記載の方法であって、
前記有機金属前駆体は、t−ブチルトリス(ジメチルアミノ)スズ、i−ブチルトリス(ジメチルアミノ)スズ、n−ブチル(トリス)ジメチルアミノスズ、sec−ブチルトリス(ジメチルアミノ)スズ、i−プロピル(トリス)ジメチルアミノスズ、n−プロピル(トリス)ジメチルアミノスズ、および類似アルキル(トリス)(t−ブトキシ)スズ化合物である、方法。
[形態19]
半導体基板の表面上にリソグラフィマスク前駆体を形成するための方法であって、
(a)有機金属前駆体の蒸気流を反反応剤の蒸気流と混合させて重合有機金属材料を形成することであって、
(i)前記有機金属前駆体は、式:M a R b L c を有し、Mは、1×10 7 cm 2 /mol以上の原子吸収断面積を有する金属であり、Rは、C n H 2n+1 などのアルキルであり、nは≧3であり、Lは、反反応剤と反応する配位子、イオン、または他の部分であり、a≧1であり、b≧1であり、c≧1であり、
(ii)前記反反応剤は、水、過酸化物(例えば、過酸化水素)、ジヒドロキシアルコールまたはポリヒドロキシアルコール、フッ化ジヒドロキシアルコールまたはフッ化ポリヒドロキシアルコール、フッ化グリコール、およびこれらの混合物からなる群より選択されることと、
(b)前記基板の前記表面上に前記有機金属材料を堆積させて、EUVパターン化可能膜を形成することと、
(c)任意で前記膜を加熱することと、
(d)前記EUVパターン化可能膜がEUV光に露光されない未露光膜領域も含むように、前記EUVパターン化可能膜の一領域を前記EUV光に露光して露光膜領域を形成することと、
(e)前記EUVパターン化可能膜を乾式湿現像することと、
を含む、方法。
[形態20]
形態9〜19のいずれか1項に記載の方法であって、
前記有機金属前駆体は、部分的にフッ素化されている、方法。
Claims (20)
- 基板の表面上にEUVパターン化可能膜を形成するための方法であって、
有機金属前駆体の蒸気流を反反応剤の蒸気流と混合させて重合有機金属材料を形成することと、
前記基板の前記表面上に前記有機金属材料を堆積させて、前記EUVパターン化可能膜を形成することと、
を含む、方法。 - 請求項1に記載の方法であって、
前記有機金属前駆体は、式:MaRbLcを有し、Mは、1×107cm2/mol以上の原子吸収断面積を有する金属であり、Rは、CnH2n+1などのアルキルであり、nは≧3であり、Lは、反反応剤と反応する配位子、イオン、または他の部分であり、a≧1であり、b≧1であり、c≧である、方法。 - 請求項2に記載の方法であって、
Mは、スズ、ビスマス、アンチモン、およびこれらの組み合わせからなる群より選択され、Rは、i−プロピル、n−プロピル、t−ブチル、i−ブチル、n−ブチル、sec−ブチル、i−ペンチル、n−ペンチル、t−ペンチル、sec−ペンチル、およびこれらの混合物からなる群より選択され、Lは、アミン、アルコキシ、カルボン酸塩、ハロゲン、およびこれらの混合物からなる群より選択される、方法。 - 請求項1または請求項3に記載の方法であって、
前記有機金属前駆体は、t−ブチルトリス(ジメチルアミノ)スズ、i−ブチルトリス(ジメチルアミノ)スズ、n−ブチル(トリス)ジメチルアミノスズ、sec−ブチルトリス(ジメチルアミノ)スズ、i−プロピル(トリス)ジメチルアミノスズ、n−プロピル(トリス)ジメチルアミノスズ、および類似アルキル(トリス)(t−ブトキシ)スズ化合物である、方法。 - 請求項1〜4のいずれか1項に記載の方法であって、
前記有機金属前駆体は、部分的にフッ素化されている、方法。 - 請求項1〜5のいずれか1項に記載の方法であって、
前記反反応剤は、水、過酸化水素、ジヒドロキシアルコールまたはポリヒドロキシアルコール、硫化水素、二硫化水素、トリフルオロアセトアルデヒド一水和物、フッ化ジヒドロキシアルコールまたはフッ化ポリヒドロキシアルコール、およびフッ化グリコールからなる群より選択される、方法。 - 請求項1〜6のいずれか1項に記載の方法であって、
前記混合および堆積は、連続化学気相堆積プロセスで実施される、方法。 - 請求項1〜7のいずれか1項に記載の方法であって、
前記半導体基板は、下地トポグラフィフィーチャを備える、方法。 - 半導体基板の表面上にリソグラフィマスク前駆体を形成するための方法であって、
有機金属前駆体の蒸気流を反反応剤の蒸気流と混合させて重合有機金属材料を形成することと、
前記半導体基板の前記表面上に前記有機金属材料を堆積させて、EUVパターン化可能膜を形成することと、
任意で前記膜を加熱することと、
前記EUVパターン化可能膜がEUV光に露光されない未露光膜領域も含むように、前記EUVパターン化可能膜の一領域を前記EUV光に露光して露光膜領域を生成することと、
任意で前記EUVパターン化可能膜を加熱して、前記露光領域および前記未露光領域を含むマスク前駆体を形成することと、
を含む、方法。 - 請求項9に記載の方法であって、
前記マスク前駆体の前記露光領域は、不溶性であり、前記マスク前駆体の前記未露光領域は、選択された溶剤において溶性である、方法。 - 請求項10に記載の方法であって、さらに、
前記溶剤を用いて前記マスク前駆体の前記未露光領域を除去することを含む、方法。 - 請求項9または請求項10に記載の方法であって、
前記マスク前駆体の前記露光領域は、反応性表面部分を含む、方法。 - 請求項12に記載の方法であって、さらに、
前記露光領域の前記表面上に副材料を選択的に堆積させることを含み、
溶解性コントラストまたはエッチング選択性は、前記露光領域と前記未露光領域との間で増加する、方法。 - 請求項13に記載の方法であって、
前記副材料の前記堆積は、原子層堆積プロセスを用いて実施される、方法。 - 請求項9または請求項14に記載の方法であって、さらに、
前記露光後に前記EUVパターン化可能膜を乾式現像することを含む、方法。 - 請求項9〜15のいずれか1項に記載の方法であって、
前記有機金属前駆体は、式:MaRbLcを有し、Mは、1×107cm2/mol以上の原子吸収断面積を有する金属であり、Rは、CnH2n+1などのアルキルであり、nは≧3であり、Lは、反反応剤と反応する配位子、イオン、または他の部分であり、a≧1であり、b≧1であり、c≧1である、方法。 - 請求項16に記載の方法であって、
Mは、スズ、ビスマス、アンチモン、およびこれらの組み合わせからなる群より選択され、Rは、i−プロピル、n−プロピル、t−ブチル、i−ブチル、n−ブチル、sec−ブチル、i−ペンチル、n−ペンチル、t−ペンチル、sec−ペンチル、およびこれらの混合物からなる群より選択され、Lは、アミン、アルコキシ、カルボン酸塩、ハロゲン、およびこれらの混合物からなる群より選択される、方法。 - 請求項9〜17のいずれか1項に記載の方法であって、
前記有機金属前駆体は、t−ブチルトリス(ジメチルアミノ)スズ、i−ブチルトリス(ジメチルアミノ)スズ、n−ブチル(トリス)ジメチルアミノスズ、sec−ブチルトリス(ジメチルアミノ)スズ、i−プロピル(トリス)ジメチルアミノスズ、n−プロピル(トリス)ジメチルアミノスズ、および類似アルキル(トリス)(t−ブトキシ)スズ化合物である、方法。 - 半導体基板の表面上にリソグラフィマスク前駆体を形成するための方法であって、
(a)有機金属前駆体の蒸気流を反反応剤の蒸気流と混合させて重合有機金属材料を形成することであって、
(i)前記有機金属前駆体は、式:MaRbLcを有し、Mは、1×107cm2/mol以上の原子吸収断面積を有する金属であり、Rは、CnH2n+1などのアルキルであり、nは≧3であり、Lは、反反応剤と反応する配位子、イオン、または他の部分であり、a≧1であり、b≧1であり、c≧1であり、
(ii)前記反反応剤は、水、過酸化物(例えば、過酸化水素)、ジヒドロキシアルコールまたはポリヒドロキシアルコール、フッ化ジヒドロキシアルコールまたはフッ化ポリヒドロキシアルコール、フッ化グリコール、およびこれらの混合物からなる群より選択されることと、
(b)前記基板の前記表面上に前記有機金属材料を堆積させて、EUVパターン化可能膜を形成することと、
(c)任意で前記膜を加熱することと、
(d)前記EUVパターン化可能膜がEUV光に露光されない未露光膜領域も含むように、前記EUVパターン化可能膜の一領域を前記EUV光に露光して露光膜領域を形成することと、
(e)前記EUVパターン化可能膜を乾式湿現像することと、
を含む、方法。 - 請求項9〜19のいずれか1項に記載の方法であって、
前記有機金属前駆体は、部分的にフッ素化されている、方法。
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CN112020676A (zh) | 2020-12-01 |
TW202006168A (zh) | 2020-02-01 |
EP3791231A4 (en) | 2022-01-26 |
KR20200144580A (ko) | 2020-12-29 |
EP3791231A1 (en) | 2021-03-17 |
US20210013034A1 (en) | 2021-01-14 |
WO2019217749A1 (en) | 2019-11-14 |
SG11202009703QA (en) | 2020-10-29 |
JP2024045257A (ja) | 2024-04-02 |
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