JP5531353B2 - ポリシラザンを用いたリバーストーン画像の形成のためのハードマスク方法 - Google Patents
ポリシラザンを用いたリバーストーン画像の形成のためのハードマスク方法 Download PDFInfo
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- JP5531353B2 JP5531353B2 JP2011548793A JP2011548793A JP5531353B2 JP 5531353 B2 JP5531353 B2 JP 5531353B2 JP 2011548793 A JP2011548793 A JP 2011548793A JP 2011548793 A JP2011548793 A JP 2011548793A JP 5531353 B2 JP5531353 B2 JP 5531353B2
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- Prior art keywords
- photoresist
- polysilazane
- coating
- underlayer
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229920001709 polysilazane Polymers 0.000 title claims description 111
- 238000000034 method Methods 0.000 title claims description 62
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 claims description 195
- 229920000642 polymer Polymers 0.000 claims description 84
- 238000000576 coating method Methods 0.000 claims description 75
- 239000011248 coating agent Substances 0.000 claims description 72
- 238000005530 etching Methods 0.000 claims description 62
- 229910052710 silicon Inorganic materials 0.000 claims description 57
- 239000010703 silicon Substances 0.000 claims description 56
- 239000000203 mixture Substances 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 51
- 125000003118 aryl group Chemical group 0.000 claims description 41
- 125000000217 alkyl group Chemical group 0.000 claims description 31
- 239000002904 solvent Substances 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 239000008199 coating composition Substances 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 7
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 7
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- 125000003282 alkyl amino group Chemical group 0.000 claims description 5
- 125000005103 alkyl silyl group Chemical group 0.000 claims description 5
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 5
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 3
- 239000010410 layer Substances 0.000 description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 54
- 239000010408 film Substances 0.000 description 51
- -1 anthracyl groups Chemical group 0.000 description 20
- 230000008569 process Effects 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 125000001931 aliphatic group Chemical group 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 13
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 12
- 125000001424 substituent group Chemical group 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- 125000004122 cyclic group Chemical group 0.000 description 10
- 239000007787 solid Substances 0.000 description 9
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 125000002947 alkylene group Chemical group 0.000 description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical class C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000006117 anti-reflective coating Substances 0.000 description 7
- 238000004132 cross linking Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 6
- 229940116333 ethyl lactate Drugs 0.000 description 6
- 125000001624 naphthyl group Chemical group 0.000 description 6
- 125000000962 organic group Chemical group 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 125000002877 alkyl aryl group Chemical group 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 239000012776 electronic material Substances 0.000 description 5
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 4
- 238000000921 elemental analysis Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- AFABGHUZZDYHJO-UHFFFAOYSA-N 2-Methylpentane Chemical compound CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 229910007991 Si-N Inorganic materials 0.000 description 3
- 229910006294 Si—N Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000005910 alkyl carbonate group Chemical group 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000003431 cross linking reagent Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 125000001188 haloalkyl group Chemical group 0.000 description 3
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 3
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical compound FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 description 3
- 150000002576 ketones Chemical group 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- YRPLSAWATHBYFB-UHFFFAOYSA-N (2-methyl-2-adamantyl) prop-2-enoate Chemical compound C1C(C2)CC3CC1C(C)(OC(=O)C=C)C2C3 YRPLSAWATHBYFB-UHFFFAOYSA-N 0.000 description 2
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- ZTJNPDLOIVDEEL-UHFFFAOYSA-N 2-acetyloxyethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOC(C)=O ZTJNPDLOIVDEEL-UHFFFAOYSA-N 0.000 description 2
- DMMOZSFQHREDHM-UHFFFAOYSA-N 2-adamantyl 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC1C(OC(=O)C(=C)C)C2C3 DMMOZSFQHREDHM-UHFFFAOYSA-N 0.000 description 2
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- GXDHCNNESPLIKD-UHFFFAOYSA-N 2-methylhexane Natural products CCCCC(C)C GXDHCNNESPLIKD-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 150000001336 alkenes Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- MJYSISMEPNOHEG-UHFFFAOYSA-N anthracen-9-ylmethyl 2-methylprop-2-enoate Chemical compound C1=CC=C2C(COC(=O)C(=C)C)=C(C=CC=C3)C3=CC2=C1 MJYSISMEPNOHEG-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 150000001616 biphenylenes Chemical group 0.000 description 2
- DIKBFYAXUHHXCS-UHFFFAOYSA-N bromoform Chemical compound BrC(Br)Br DIKBFYAXUHHXCS-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007710 freezing Methods 0.000 description 2
- 230000008014 freezing Effects 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- GDOPTJXRTPNYNR-UHFFFAOYSA-N methylcyclopentane Chemical compound CC1CCCC1 GDOPTJXRTPNYNR-UHFFFAOYSA-N 0.000 description 2
- 125000004957 naphthylene group Chemical group 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
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- 229920000620 organic polymer Polymers 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 238000010526 radical polymerization reaction Methods 0.000 description 2
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- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- JYVXNLLUYHCIIH-UHFFFAOYSA-N (+/-)-mevalonolactone Natural products CC1(O)CCOC(=O)C1 JYVXNLLUYHCIIH-UHFFFAOYSA-N 0.000 description 1
- MQMLKROCNSLXFA-UHFFFAOYSA-N (1-ethyl-2-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC2C(OC(=O)C(C)=C)C1(CC)C3 MQMLKROCNSLXFA-UHFFFAOYSA-N 0.000 description 1
- VDDICZVAQMPRIB-UHFFFAOYSA-N (2-hydroxy-1-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC2C(O)C1(OC(=O)C(=C)C)C3 VDDICZVAQMPRIB-UHFFFAOYSA-N 0.000 description 1
- FDYDISGSYGFRJM-UHFFFAOYSA-N (2-methyl-2-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC1C(OC(=O)C(=C)C)(C)C2C3 FDYDISGSYGFRJM-UHFFFAOYSA-N 0.000 description 1
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- MQPLRNXGZXAKDQ-UHFFFAOYSA-N (3-hydroxy-5,7-dimethyl-1-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)(C)CC3(C)CC2(O)CC1(OC(=O)C(=C)C)C3 MQPLRNXGZXAKDQ-UHFFFAOYSA-N 0.000 description 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Description
a) 任意選択的に、吸光性有機下層(underlayer)を基材上に形成し;
b) 前記下層または基材上にフォトレジストのコーティングを形成し;
c) フォトレジスト層中にフォトレジストパターンを形成し;
d) フォトレジストパターン上に、ポリシラザンコーティング組成物からポリシラザンコーティングを形成し、ここで、ポリシラザンコーティングはフォトレジストパターンよりも厚く、更にここで、ポリシラザンコーティング組成物は、ケイ素/窒素ポリマー及び有機コーティング溶剤を含み;
e) ポリシラザンコーティングをエッチングして、少なくとも、フォトレジストパターンの上端が現れる高さまでポリシラザンコーティングを除去し; 及び
f) フォトレジスト、場合により及びフォトレジストの下にある下層をドライエッチングして除去し、フォトレジストパターンが存在していた所の下に開口を形成する、
ことを含む前記方法に関する。
ライン・ツー・トレンチ(Line to trench),10nm
ピラーズ・ツー・コンタクツ(Pillars to contacts),14nm
本発明は、Si/O/N/Hガラスまたはケイ素ハードマスクに転化でき、そうして酸化ドライエッチングに耐性のあるハードマスクを形成するポリシラザンコーティングを用いる方法を含むリバーストーン多層画像形成方法を用いて、電子デバイス、特に微細電子デバイス上に微細パターンを画像形成する発明的方法に関する。また、本発明は、該発明方法を用いて製造される製造物に関し、更に該発明方法から製造される微細電子デバイスに関する。
a) 任意選択的に、基材上に吸光性有機下層(1)を形成し;
b) 上記下層または基材上にフォトレジスト(2)のコーティングを形成し;
c) フォトレジスト層中にフォトレジストパターンを形成し;
d) 上記フォトレジストパターン上に、ポリシラザンコーティング組成物からポリシラザンコーティング(3)を形成し、ここで、ポリシラザンコーティングは、フォトレジストパターンの膜厚よりも厚い膜厚を有し、更にここで、ポリシラザンコーティング組成物は、ケイ素/窒素ポリマー及び有機コーティング溶剤を含み;
e) ポリシラザンコーティングをエッチングして、少なくとも、フォトレジストパターンの上端が現れる高さまでポリシラザンコーティングを除去し; そして
f) ドライエッチングを行い、フォトレジスト、及びフォトレジストの下にある任意選択の下層を基材に至るまで除去し、それによって、フォトレジストパターンが存在していた所の下に開口またはグルーブ(4)を形成する、
ことを含む上記方法に関する。
一つまたはそれ以上の有機置換基、例えばアルキル、アルキルアリール、エーテル、ハロアルキル、カルボン酸、カルボン酸のエステル、アルキルカーボネート、アルキルアルデヒド、ケトンで置換されていることができる。置換基の更に別の例は、−CH2−OH、−CH2Cl、−CH2Br、−CH2Oアルキル、−CH2−O−C=O(アルキル)、−CH2−O−C=O(O−アルキル)、−CH(アルキル)−OH、−CH(アルキル)−Cl、−CH(アルキル)−Br、−CH(アルキル)−O−アルキル、−CH(アルキル)−O−C=O−アルキル、−CH(アルキル)−O−C=O(O−アルキル)、−HC=O、−アルキル−CO2H、アルキル−C=O(O−アルキル)、−アルキル−OH、−アルキル−ハロゲン、−アルキル−O−C=O(アルキル)、−アルキル−O−C=O(O−アルキル)、アルキル−HC=Oである。該ポリマーの一つの態様では、縮合芳香族基は、含窒素側基部を含まない。芳香族環上の置換基は、コーティング溶剤中へのポリマーの可溶性を助け得る。縮合芳香族構造上の置換基の一部は、硬化の間に熱分解するものであってもよく、そうしてこれらは、硬化したコーティング中には残留しないが、なおも、エッチングプロセスの間に有用な高炭素含有フィルムを与え得る。縮合芳香族基は、より一般的には構造1’〜6’によって表される。ここで、Raは、有機置換基、例えば水素、ヒドロキシ、ヒドロキシアルキルアリール、アルキル、アルキルアリール、カルボン酸、カルボン酸のエステルなどであり、そしてnは環上の置換基の数である。置換基数nは1〜12の範囲であることができる。典型的には、nは1〜5の範囲であることができ、ここで、Raは、水素を除いて、アルキル、ヒドロキシ、ヒドロキシアルキル、ヒドロキシアルキルアリール、アルキルアリール、エーテル、ハロアルキル、アルコキシ、カルボン酸、カルボン酸のエステル、アルキルカーボネート、アルキルアルデヒド、ケトンなどの基から独立して選択される置換基である。置換基の更に別の例は、−CH2−OH、−CH2Cl、−CH2Br、−CH2Oアルキル、−CH2−O−C=O(アルキル)、−CH2−O−C=O(O−アルキル)、−CH(アルキル)−OH、−CH(アルキル)−Cl、−CH(アルキル)−Br、−CH(アルキル)−O−アルキル、−CH(アルキル)−O−C=O−アルキル、−CH(アルキル)−O−C=O(O−アルキル)、−HC=O、−アルキル−CO2H、アルキル−C=O(O−アルキル)、 −アルキル−OH、−アルキル−ハロゲン、−アルキル−O−C=O(アルキル)、−アルキル−O−C=O(O−アルキル)、アルキル−HC=Oである。
(i)構造(8)において: R1及びR2が水素原子を表し、そしてR3が上述の有機基を表すポリシラザン; 繰り返し単位として−(R2SiNH)−を含みかつ主として3〜5の重合度を有する環状構造を有するポリシラザン; 化学式(R3SiHNH)x[(R2SiH)1.5N]1−x(0.4<x<1)によって表されかつ同時にそれの分子内に鎖構造及び環状構造を有するポリシラザン;
(ii)一般式(8)によって表され、R1が水素原子を表し、R2及びR3が上記の有機基を表す、ポリシラザン; 及び
(iii)繰り返し単位として−(R1R2SiNR3)−(式中、R1及びR2は有機基であり、そしてR3は水素原子を表す)を含みかつ主として3〜5の重合度を有する環状構造を有するポリシラザン。
10gのMX−270(N,N',N'',N''''−(テトラメトキシメチル)グリコリル、Sanwa Chemical Co. LTD, Hiratsuka Factory(9−24−8,Tamura Hiratsuka−city Kanagawa Pref., Japan)から入手できる架橋剤、90gの70/30ポリ(メチルメタクリレート(MMA)−co−ヒドロキシスチレン(HS))(DuPont Corp社, 1007 Market Street, Wilmington, Delaware, USAの70MMA/30HS)、及び40gの10%ドデシルベンジルスルホニウムトリエチルアンモニウム塩を、ArFシンナー及び860gのArFシンナー(ArFシンナーは70:30PGME:PGMEAである。AZ(登録商標)Electronic Materials USA Corp,70 Meister Ave.,Somerville,NJ,USA)中に入れることによって、下層原液を調製した。
AZ(登録商標)AX2110P(AZ(登録商標)Electronic Materials USA Corp,70 Meister Ave.,Somerville,NJ,USAから入手できる193nmフォトレジスト)を、1:1重量比で、AZ(登録商標)ArF MPシンナー(AZ(登録商標)Electronic Materials USA Corp, 70 Meister Ave.,Somerville,NJ,USAから入手可能)で希釈した。次いでこのコーティング溶液を0.2μmPTFEフィルタに通して濾過した。
300ml四つ首フラスコに、ガス導入チューブ、機械的攪拌機及びDewar冷却器を装備した。この反応器を、酸素不含の乾燥窒素でパージした。150mlの脱ガスした無水ピリジンをこのフラスコ内に入れ、そして氷で冷却した。16.1gのジクロロシランをこれに添加して、白色の固形付加物(SiH2Cl2・2C5H6N)を生成した。この反応混合物を氷で冷却した。15.9gのアンモニア(ソーダ石灰チューブ及び活性炭チューブに通して精製したもの)と窒素ガスとの混合物をこのフラスコ中に導入した。反応の完了後、固形生成物を、遠心分離、その後の濾過によって取り除いた。溶剤を、減圧下(50℃、5mmHg、2時間)で濾液から除去して、ガラス様固形物の形の5.62gのポリシラザンポリマーを得た。分子量は、GPC(ゲル透過クロマトグラフィー)で930/1862(Mn/Mw)と測定された。Si/N比は化学分析によってSi/N=1.24と測定された。
例1からの炭素下層コーティングを、8インチ(0.2032m)ケイ素ウェハ上に1500rpmでスピンコートし、そして200℃で60秒間ベークして、200nmの膜厚を得た。例2からのフォトレジスト調合物を1500rpmでコーティングし、そして100℃/60秒間ソフトベークして、90nmの膜厚を得た。このスタックを、90nmのラインスペース図形と280nmのピッチの140nmピラーとからなる格子を有し及びTEL ACT12''トラックにインターフェースで接続されたArFスキャナー(Nikon NSR−306D: NA=0.85,ダイポールY照明,0.8s,a/R=0.63,レチクル:6%HTPSM(高透過性ハーフトーン位相シフトマスク))で過剰露光し、そしてAZ300MIF(テトラメチルアンモニウムヒドロキシドに基づく。AZ(登録商標)Electronic Materials USA Corp, 70 Meister Ave.,Somerville,NJから入手可能)で23℃で30秒間、現像した。これらの層を、110℃で60秒間、ポスト露光ベークした。ウェハの走査電子顕微鏡(SEM)写真からの断面は、140nmチェッカーボードマスクパターンを輪帯照明(0.82アウターシグマ、0.43インナーシグマ)で過剰露光することによってパターン化された、135nmスペースの45nmラインの図形及び280nmピッチの100nmピラーが、過剰露光モードで簡単に解像されたことを示した。
パターン転写及びエッチング速度測定
全ての画像反転三層(IRT)材料はAZ Electronic Materialsで調製した。SiHM1(ケイ素ハードマスク1)は、PGMEA中のシルセスキオキサン樹脂からなり、最適化ステップに使用した。炭素下層(CUL)(例1、炭素含有率70%)。CULの光学指数を、VASE(多入射角分光エリプソメータ)分析を用いて測定し、193nmでnが1.56、kが0.43であった。
過剰のポリシラザンフィルムをフォトレジスト表面に至るまで除去するために、リバーストーンリソグラフィスタックを有するウェハを、先ず、15秒間のポリシラザンエッチバックステップに付した。これは、表1の例Cに記載の他のプラズマ条件により、1:1CF4/O2エッチングガスコンビネーションを用いて達成した。このステップは、フォトレジスト図形の中央に40nmのチャネルを開口した。酸素富化第二エッチングを用いた次のエッチングは、ポリシラザンをSi、O、N複合ケイ素ハードマスクフィルムに転化することによって、これを硬化した。下層パターン転写エッチングステップは、他のプラズマ条件により15秒間のO2エッチングを用いて達成した。ここでエッチング条件は表2に記載のものである。ケイ素ハードマスク中のグルーブ開口D2を測定した。
例6の上記のプロセスを、様々な第一及び第二エッチング時間を用いて、そうして開口D2を制御することによって繰り返した。
図9は、SiHMのCULエッチングに関してのVASE検証を示す。
Claims (13)
- デバイス上にリバーストーン画像を形成する方法であって、
a)任意選択的に、基材上に吸光性有機下層を形成すること;
b)基材上に、または下層が存在する場合には下層上に、フォトレジストのコーティングを形成すること;
c)フォトレジストコーティングを像様露光にまたはインプリンティングに付すことによって、フォトレジスト図形の幅(D 1 )を有するフォトレジストパターンを形成すること;
d)フォトレジストパターン上に、ポリシラザンコーティング組成物からポリシラザンコーティングを形成すること、ここで、ポリシラザンコーティングはフォトレジストパターンよりも厚く、更にここで、ポリシラザンコーティング組成物は、ケイ素及び窒素含有ポリマー及び有機コーティング溶剤を含み;
e)ポリシラザンコーティングをエッチングして、少なくとも、フォトレジストパターンの上端が現れる高さまでポリシラザンコーティングを除去すること;及び
f)フォトレジストを、またはフォトレジストとフォトレジストの下に任意選択的に存在する下層との両方を、ドライエッチングにより除去して、フォトレジストパターンが存在していた所の下に開口(D 2 )を形成すること、
を含み、収縮率%={(D 1 −D 2 )/D 1 }*100が5〜80の範囲である、上記方法。 - 基材をドライエッチングするステップを更に含む、請求項1の方法。
- 下層が存在する、請求項1または2の方法。
- 下層が存在しない、請求項1または2の方法。
- ステップf)において、ドライエッチングが、フォトレジスト及び下層を一つの連続的なステップで除去するために同じガス組成物を使用することを含む、請求項1〜3のいずれか一つの方法。
- ステップf)において、ドライエッチングが、先ずフォトレジストを除去し、その後に下層を除去する別個のステップが続くことを含む、請求項1〜3のいずれか一つの方法。
- 下層が75重量%を超える炭素含有率を有する、請求項1〜3及び5〜9のいずれか一つの方法。
- 像様露光が、248nm、193nmもしくは157nmの波長を有する放射線を用いて、またはEUVを用いて、またはe−ビームを用いて行われる、請求項1〜10のいずれか一つの方法。
- ポリシラザンコーティングを除去するためのステップe)におけるドライエッチングガスがフルオロカーボンを含む、請求項1〜11のいずれか一つの方法。
- ステップf)におけるドライエッチングガスが酸素を含む、請求項1〜12のいずれか一つの方法。
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US20090253081A1 (en) * | 2008-04-02 | 2009-10-08 | David Abdallah | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step |
US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
US20100040838A1 (en) * | 2008-08-15 | 2010-02-18 | Abdallah David J | Hardmask Process for Forming a Reverse Tone Image |
US20100183851A1 (en) * | 2009-01-21 | 2010-07-22 | Yi Cao | Photoresist Image-forming Process Using Double Patterning |
KR101715343B1 (ko) * | 2009-03-11 | 2017-03-14 | 주식회사 동진쎄미켐 | 반도체 소자의 미세 패턴 형성 방법 |
US8435415B2 (en) * | 2009-11-24 | 2013-05-07 | The United States of America, as represented by the Secretary of Commerce, The National Institute of Standards and Technology | Nanofabrication process and nanodevice |
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CN102308260A (zh) | 2012-01-04 |
KR20110118781A (ko) | 2011-11-01 |
EP2396703A1 (en) | 2011-12-21 |
US8084186B2 (en) | 2011-12-27 |
TW201030804A (en) | 2010-08-16 |
WO2010092420A1 (en) | 2010-08-19 |
CN102308260B (zh) | 2013-10-23 |
JP2012517612A (ja) | 2012-08-02 |
TWI515767B (zh) | 2016-01-01 |
EP2396703B1 (en) | 2015-06-10 |
KR101628423B1 (ko) | 2016-06-08 |
US20100203299A1 (en) | 2010-08-12 |
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