JP5193121B2 - レジスト塗布現像方法 - Google Patents
レジスト塗布現像方法 Download PDFInfo
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/54—Lamp housings; Illuminating means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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Description
図1に示すように、レジスト塗布現像装置1は、カセットステーション2、処理ステーション3、およびインターフェイス部4を有している。
溶剤処理室62は、筐体62a内のほぼ中央部に設けられるカップ70と、カップ70内に配置される例えば温調加熱プレートであるサセプタ62Sと、サセプタ62Sに保持されるウエハWの表面に溶剤気体に供給する溶剤供給ノズル83とを有している。
先ず、ウエハ搬送体7(図1)によって、カセットCから未処理のウエハWが1枚取り出され、第3の処理装置群G3のエクステンション装置32(図3)に搬送される。次にウエハWは、主搬送装置13によって第3の処理装置群G3のアドヒージョン装置31に搬入され、ウエハWに対するレジスト液の密着性を向上させるため、ウエハWに例えばHMDSが塗布される。次に、ウエハWはクーリング装置30に搬送され、所定の温度に冷却された後、レジスト塗布装置17に搬送される。レジスト塗布装置17では、ウエハW上にArF用のレジスト液が回転塗布され、ArF用レジスト膜が形成される。
この後、ウエハWは、搬送アーム64Aにより、溶剤処理室62から予備室64へ搬出され、次いで、主搬送装置13により、第4の処理装置群G4のポストベーキング装置47に搬送されて、ここで、ポストベーキングが行われる。続けて、ウエハWは、主搬送装置13により第4の処理装置群G4のクーリング装置30に搬送されて冷却され、その後、エクステンション装置32を介してもとのカセットCに戻されて、ウエハWに対する一連のレジスト塗布/露光/現像を含む処理プロセスが終了する。
<実験例>
次に、上述のレジスト塗布現像方法の効果を確認するために行った実験と、その結果について説明する。
次いで、貯留タンク90(図8(b))に貯留したm−メチルフェノール(m−クレゾール)を窒素ガスでバブリングし、溶剤供給ノズル83からm−クレゾールを含む溶剤気体をウエハに吹き付けて、パターン化されたレジスト膜を溶剤気体に晒した。溶剤気体を吹き付けた時間(溶剤供給ノズル83の往復時間)は、約40秒とした。また、窒素ガスの供給量は4500sccmとし、貯留タンク90内のm−クレゾールの温度は約23℃とした。
この後、所定の経路を通してレジスト塗布現像装置1からウエハを取り出し、FT−IR(ATR)法による評価を行った。
図9(a)から図9(b)は、上記のウエハについてのFT−IR測定結果を示すグラフである。これらのグラフにおいて矢印Aaで示すピークは、レジスト膜中の芳香族炭化水素の伸縮振動に由来しており、これにより、当該レジスト膜中にベンゼン環が取り込まれていることが確認された。なお、図9(a)の矢印Ahで示すピークは、炭素−水素結合の伸縮振動に由来し、図9(b)の矢印Aoで示すピークは、炭素−酸素間の二重結合に由来している。
さらに、上述のレジスト膜処理装置60または変形例のレジスト膜処理装置(溶剤処理室620)は、レジスト塗布現像装置1の処理ステーション3に配置されていたが、インターフェイス部4に配置されても良く、レジスト塗布現像装置1の外部に独立に設け、所定の搬送機構によりレジスト塗布現像装置1との間でウエハWの受け渡しを行うようにしても良い。
Claims (4)
- 基板にレジスト膜を形成するステップと、
前記基板に形成された前記レジスト膜を露光するステップと、
露光された前記レジスト膜を現像してパターン化するステップと、
現像によりパターン化された前記レジスト膜に紫外域光を照射するステップと、
前記照射するステップ中または後に前記レジスト膜を加熱するステップと、
前記加熱するステップ中または後に、フェノール類に属するフェノール溶剤を含む溶剤気体に前記レジスト膜を晒すステップと、
を含むレジスト塗布現像方法。 - 前記フェノール溶剤がm−メチルフェノールである、請求項1に記載のレジスト塗布現像方法。
- 前記露光するステップにおいてアルゴンフッ素光源が使用される、請求項1又は2に記載のレジスト塗布現像方法。
- 前記紫外域光が150nmから450nmの波長成分を含む、請求項1から3のいずれか一項に記載のレジスト塗布現像方法。
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JP5890255B2 (ja) * | 2012-04-02 | 2016-03-22 | 株式会社Screenセミコンダクターソリューションズ | 露光装置、基板処理装置、基板の露光方法および基板処理方法 |
JP5655895B2 (ja) * | 2013-06-05 | 2015-01-21 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
KR102306612B1 (ko) * | 2014-01-31 | 2021-09-29 | 램 리써치 코포레이션 | 진공-통합된 하드마스크 프로세스 및 장치 |
JP6428466B2 (ja) * | 2014-06-23 | 2018-11-28 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理システム及び記憶媒体 |
JP6239466B2 (ja) * | 2014-08-15 | 2017-11-29 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
CN105118803B (zh) * | 2015-08-21 | 2019-01-22 | 京东方科技集团股份有限公司 | 顶针机构及支撑装置 |
US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
CN111036467A (zh) * | 2018-10-15 | 2020-04-21 | 许铭案 | 三合一喷涂机 |
US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
EP3908882A4 (en) | 2020-01-15 | 2022-03-16 | Lam Research Corporation | UNDERCOAT FOR PHOTOCOAT ADHESION AND DOSE REDUCTION |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4264725A (en) * | 1978-10-19 | 1981-04-28 | Eastman Kodak Company | Photothermographic composition and process |
US4239816A (en) * | 1978-12-01 | 1980-12-16 | Ppg Industries, Inc. | Organic additives for organometallic compositions |
US4324717A (en) * | 1980-06-23 | 1982-04-13 | The B. F. Goodrich Company | Norbornene polymers stabilized with hindered aromatic alcohols |
JPH04111423A (ja) * | 1990-08-31 | 1992-04-13 | Toshiba Corp | 短波長紫外線を用いるパターン形成法 |
GB9105561D0 (en) * | 1991-03-15 | 1991-05-01 | Coates Brothers Plc | Image formation |
JPH0669118A (ja) * | 1992-05-28 | 1994-03-11 | Nec Corp | レジストパターンの形成方法 |
JP2856240B2 (ja) * | 1992-10-30 | 1999-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレイション | プリント回路基板を再加工する方法 |
US5612303B1 (en) * | 1993-06-15 | 2000-07-18 | Nitto Chemical Industry Co Ltd | Solvent composition |
JP3812056B2 (ja) * | 1997-05-26 | 2006-08-23 | 住友化学株式会社 | レジストパターンの製造方法 |
JPH10333340A (ja) * | 1997-05-27 | 1998-12-18 | Sharp Corp | レジストパターンの形成方法 |
US5994597A (en) * | 1998-11-06 | 1999-11-30 | International Business Machines Corporation | Process for recovering high boiling solvents from a photolithographic waste stream comprising less than 10 percent by weight monomeric units |
US6187965B1 (en) * | 1998-11-06 | 2001-02-13 | International Business Machines Corporation | Process for recovering high boiling solvents from a photolithographic waste stream comprising at least 10 percent by weight of monomeric units |
US7129199B2 (en) * | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US6582891B1 (en) * | 1999-12-02 | 2003-06-24 | Axcelis Technologies, Inc. | Process for reducing edge roughness in patterned photoresist |
US6503693B1 (en) * | 1999-12-02 | 2003-01-07 | Axcelis Technologies, Inc. | UV assisted chemical modification of photoresist |
US6660646B1 (en) * | 2000-09-21 | 2003-12-09 | Northrop Grumman Corporation | Method for plasma hardening photoresist in etching of semiconductor and superconductor films |
JP4233314B2 (ja) | 2002-11-29 | 2009-03-04 | 東京応化工業株式会社 | レジスト組成物および溶解制御剤 |
JP4328667B2 (ja) * | 2003-06-06 | 2009-09-09 | 東京エレクトロン株式会社 | 基板の処理膜の表面荒れを改善する方法及び基板の処理装置 |
KR101006800B1 (ko) * | 2003-06-06 | 2011-01-10 | 도쿄엘렉트론가부시키가이샤 | 기판의 처리막의 표면 거침을 개선하는 방법 및 기판 처리장치 |
JP4583790B2 (ja) | 2003-06-26 | 2010-11-17 | 東京応化工業株式会社 | ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法 |
US20050084807A1 (en) * | 2003-10-17 | 2005-04-21 | Meagley Robert P. | Reducing photoresist line edge roughness using chemically-assisted reflow |
US6977219B2 (en) * | 2003-12-30 | 2005-12-20 | Intel Corporation | Solvent vapor-assisted plasticization of photoresist films to achieve critical dimension reduction during temperature reflow |
JP4343018B2 (ja) * | 2004-04-20 | 2009-10-14 | 東京エレクトロン株式会社 | 基板の処理方法及び基板の処理装置 |
US7312148B2 (en) * | 2005-08-08 | 2007-12-25 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
JP5148090B2 (ja) | 2005-11-16 | 2013-02-20 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
JP2010091638A (ja) * | 2008-10-03 | 2010-04-22 | Fujifilm Corp | レジストパターンの表面処理方法及び該表面処理方法を用いたレジストパターンの形成方法 |
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