JP7282830B2 - 蒸着金属酸化物含有ハードマスクのeuvフォトパターニング - Google Patents
蒸着金属酸化物含有ハードマスクのeuvフォトパターニング Download PDFInfo
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- 229910044991 metal oxide Inorganic materials 0.000 title description 88
- 150000004706 metal oxides Chemical class 0.000 title description 88
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical group O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 8
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- 238000000206 photolithography Methods 0.000 claims description 8
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 6
- KWTSZCJMWHGPOS-UHFFFAOYSA-M chloro(trimethyl)stannane Chemical group C[Sn](C)(C)Cl KWTSZCJMWHGPOS-UHFFFAOYSA-M 0.000 claims description 4
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 claims description 4
- HQFPMGPCIKGRON-UHFFFAOYSA-N n-methyl-n-trimethylstannylmethanamine Chemical compound CN(C)[Sn](C)(C)C HQFPMGPCIKGRON-UHFFFAOYSA-N 0.000 claims description 4
- YFRLQYJXUZRYDN-UHFFFAOYSA-K trichloro(methyl)stannane Chemical compound C[Sn](Cl)(Cl)Cl YFRLQYJXUZRYDN-UHFFFAOYSA-K 0.000 claims description 4
- RGSFVWDUFIGRSM-UHFFFAOYSA-N tris(dimethylamino)methyltin(3+) Chemical compound CN(C)C([Sn+3])(N(C)C)N(C)C RGSFVWDUFIGRSM-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 2
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- 150000002894 organic compounds Chemical class 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Description
極紫外線(EUV)リソグラフィは、現在のフォトリソグラフィ方法で達成可能な画像形成波長をより短い波長に移行することによって、リソグラフィ技術の光学限界を拡げることで、小さいクリティカルディメンションフィーチャをパターニングすることができる。約13.5nmの波長のEUV光源を最新のリソグラフィツール(スキャナとも呼ばれる)に利用できる。EUV放射は、石英および水蒸気を含む幅広い固体および流体の材料に強く吸収されるため、真空で用いられるる。
図1A~図1Dは、蒸着金属酸化物含有ハードマスク形成処理の代表的な処理の流れを示す。一般に、膜がEUV露光によってパターニングされうるEUV感光性の酸化金属含有膜が、半導体基板上に蒸着される。次いで、金属含有膜は、EUV露光によって直接的に(すなわち、フォトレジストを利用せずに)パターニングされ、続いて、パターン現像されて、金属酸化物含有マスクを形成する。この説明では、主に、金属酸化物含有膜を参照しており、特に、金属がSnである場合には、例えば、極紫外線リソグラフィ(EUVリソグラフィ(EUVL))によってパターニングされた有機スズ酸化物膜であり、特に、EUVLは、励起Sn液滴を用いたEUV源を有する。ここで、かかる膜をEUV感光性膜と呼ぶこととする。しかしながら、異なる金属含有膜など、別の実施例も可能であることを理解されたい。
図4は、真空移送モジュールと接続し、本明細書に記載した処理の実施に適した真空統合型の金属酸化物含有膜蒸着モジュールおよびパターニングモジュールを備えた半導体処理クラスタツール構造を示す。処理はかかる真空統合型装置を利用せずに行われてもよいが、かかる装置は、いくつかの実施例において有利でありうる。
EUV感光性の金属酸化物含有膜が、半導体基板上に蒸着されうる。次いで、かかる金属酸化物含有膜は、真空雰囲気内でEUV露光によって直接的にパターニングされ、パターンは現像されて、金属酸化物含有ハードマスクを形成しうる。このように、蒸着および光学リソグラフィによる膜形成の工程を組み合わせて、実質的に低コストで金属酸化物含有ハードマスクの直接フォトパターニングの結果を得る金属酸化物含有ハードマスク形成処理が提供されている。
[適用例1]金属酸化物含有ハードマスクを形成する方法であって、
蒸着処理によって半導体基板上にEUV感光性の金属酸化物含有膜を蒸着する工程と、
前記金属酸化物含有膜の一部をEUVに露光させて、前記金属酸化物含有膜にパターンを形成する工程と、
前記金属酸化物含有ハードマスクを形成するために、前記金属酸化物含有膜の前記パターンを現像して、露光した部分および露光していない部分の一方を除去する工程と
を備える方法。
[適用例2]適用例1に記載の方法であって、前記蒸着は、CVDまたはALDによって実行される方法。
[適用例3]適用例2に記載の方法であって、前記金属酸化物含有膜は、感光性の有機金属酸化物の膜である方法。
[適用例4]適用例3に記載の方法であって、前記有機金属酸化物は有機スズ酸化物である方法。
[適用例5]適用例4に記載の方法であって、前記蒸着する工程は、ハロアルキルSn、アルコキシアルキルSn、および、アミドアルキルSnからなる群より選択された有機スズ酸化物蒸着前駆体を含む方法。
[適用例6]適用例5に記載の方法であって、前記蒸着工程は、塩化トリメチルスズ、二塩化ジメチルスズ、三塩化メチルスズ、トリス(ジメチルアミノ)メチルスズ(IV)、および、(ジメチルアミノ)トリメチルスズ(IV)からなる群より選択された蒸着前駆体を含む方法。
[適用例7]適用例4に記載の方法であって、前記蒸着する工程は、RFプラズマ内での前記有機スズ酸化物と二酸化炭素との反応を含む方法。
[適用例8]適用例7に記載の方法であって、前記蒸着された有機スズ酸化物膜は、RFプラズマ内でSn(Cl) 3 CH 3 と二酸化炭素とのCVDによって形成されたCH 3 Sn(SnO) 3 を含む方法。
[適用例9]適用例4に記載の方法であって、前記EUVに露光させるEUV露光は、前記蒸着された有機スズ酸化物膜の前記露光された部分で二量化反応を引き起こす方法。
[適用例10]適用例9に記載の方法であって、前記蒸着された有機スズ酸化物膜は、CH 3 Sn(SnO) 3 を含み、前記EUV露光時の二量化は、Sn 2 ((SnO) 3 ) 2 を生成する方法。
[適用例11]適用例10に記載の方法であって、前記現像時に、前記Sn 2 ((SnO) 3 ) 2 の露光部分は除去される方法。
[適用例12]適用例11に記載の方法であって、前記Sn 2 ((SnO) 3 ) 2 の露光部分は、前記現像時に高温エタノールおよび水によって除去される方法。
[適用例13]適用例12に記載の方法であって、前記基板は、前記パターンの現像を実行するために、前記真空雰囲気の外に搬送される方法。
[適用例14]適用例1に記載の方法であって、前記露光させる工程は、フォトレジストを利用せずに真空雰囲気内でEUV露光によって直接的に前記金属酸化物含有膜のパターニングを行うことを提供し、その後、前記金属酸化物含有ハードマスクを形成するために前記現像を行なう工程が実行される方法。
[適用例15]適用例1に記載の方法であって、前記半導体基板は、製造途中の集積回路を含むシリコンウエハであり、前記方法は、さらに、
前記蒸着前に、金属酸化物含有膜蒸着用の第1リアクタチャンバ内に前記半導体基板を準備する工程と、
蒸着後に、真空下で前記半導体基板をパターニング用のリソグラフィ処理チャンバに移送する工程と
を備える方法。
[適用例16]金属酸化物含有ハードマスク形成を実行するための装置であって、
金属酸化物含有膜蒸着モジュールと、
金属酸化物含有膜パターニングモジュールと、
前記金属酸化物含有膜蒸着モジュールおよび前記金属酸化物含有膜パターニングモジュールを接続する真空移送モジュールと、
金属酸化物含有ハードマスクの形成を実行するための命令を備えたコントローラと
を備え、
前記命令は、
前記金属酸化物含有膜蒸着モジュールにおいて、蒸着処理によって半導体基板上にEUV感光性の金属酸化物含有膜を蒸着するためのコードと、
真空下で前記半導体基板を前記金属酸化物含有膜パターニングモジュールに移送するためのコードと、
前記金属酸化物含有膜パターニングモジュールにおいて、真空雰囲気内でパターンを形成するためにEUV露光によって直接的に前記金属酸化物含有膜をパターニングするためのコードと、
前記金属酸化物含有ハードマスクを形成するために前記パターンを現像するためのコードと
を備える装置。
[適用例17]適用例16に記載の装置であって、
前記金属酸化物含有膜蒸着モジュールは、感光性の有機スズ酸化物膜を蒸着するためのリアクタチャンバを備え、
前記パターニングモジュールは、30nm未満の波長の放射源を備えたフォトリソグラフィツールを備える装置。
[適用例18]適用例17に記載の装置であって、前記金属酸化物含有膜蒸着モジュールは、PECVDツールである装置。
[適用例19]適用例18に記載の装置であって、前記パターニングモジュールは、EUVリソグラフィツールである装置。
[適用例20]適用例19に記載の装置であって、前記命令は、さらに、前記パターンの現像を実行するために、前記半導体基板を前記EUVリソグラフィツールの外に移送するためのコードを備える装置。
Claims (14)
- 膜を形成する方法であって、
蒸着処理によって半導体基板上に感光性の有機スズ酸化物膜を蒸着する工程であって、前記蒸着する工程は、アルキルスズ含有前駆体および酸素含有前駆体を含む工程と、
前記蒸着する工程の後に、前記有機スズ酸化物膜の一部を放射に露光して、前記有機スズ酸化物膜にパターンを形成する工程と、
前記形成された前記有機スズ酸化物膜のパターンを乾式現像して、露光部分または未露光部分の一方を除去することにより、有機スズ酸化物ハードマスクを形成する工程と、
を備える方法。 - 請求項1に記載の方法であって、
前記アルキルスズ含有前駆体は、塩化トリメチルスズ、二塩化ジメチルスズ、三塩化メチルスズ、トリス(ジメチルアミノ)メチルスズ(IV)、または、(ジメチルアミノ)トリメチルスズ(IV)である、方法。 - 請求項1に記載の方法であって、
前記酸素含有前駆体は、二酸化炭素(CO2)または一酸化炭素(CO)である、方法。 - 請求項1に記載の方法であって、
前記膜は、スズ-酸素結合、スズ-アルキル結合、および、スズ-酸素-スズ結合を含む、方法。 - 請求項1から請求項4のいずれか一項に記載の方法であって、
前記膜の厚さは、100~2000Åである、方法。 - 請求項1から請求項4のいずれか一項に記載の方法であって、
前記蒸着する工程は、CVDまたはALDを含む、方法。 - 請求項1から請求項4のいずれか一項に記載の方法であって、
前記半導体基板は、製造途中の集積回路を含むシリコンウエハであり、前記方法は、さらに、
前記蒸着の前に、有機スズ酸化物膜蒸着用の第1リアクタチャンバ内に前記半導体基板を準備する工程と、
蒸着後に、真空下で前記半導体基板をパターニング用のリソグラフィ処理チャンバに移送する工程と、
を備える、方法。 - 請求項1に記載の方法であって、
前記露光させる工程は、フォトレジストを利用せずに真空雰囲気内でEUV露光またはUV露光によって直接的に前記有機スズ酸化物膜のパターニングを行うことを提供し、その後、前記有機スズ酸化物膜を形成するために前記乾式現像を行なう工程が実行される、方法。 - 請求項1に記載の方法であって、
前記乾式現像を行う工程は、熱を含む、方法。 - 請求項1に記載の膜を形成する方法を実行するための装置であって、
有機スズ酸化物膜蒸着モジュールと、
有機スズ酸化物膜パターニングモジュールと、
前記有機スズ酸化物膜蒸着モジュールおよび前記有機スズ酸化物膜パターニングモジュールを接続する真空移送モジュールと、
膜形成を実行するための命令を備えたコントローラと
を備え、
前記命令は、
前記有機スズ酸化物膜蒸着モジュールにおいて、蒸着処理によって半導体基板上に感光性の有機スズ酸化物膜を蒸着するためのコードであって、前記蒸着する工程は、アルキルスズ含有前駆体および酸素含有前駆体を含む、コードと、
真空下で前記半導体基板を前記有機スズ酸化物膜パターニングモジュールに移送するためのコードと、
前記有機スズ酸化物膜パターニングモジュールにおいて、真空雰囲気内でパターンを形成するために放射露光によって直接的に前記有機スズ酸化物膜をパターニングするためのコードと、
前記パターンを乾式現像するためのコードと
を備える、装置。 - 請求項4に記載の膜を形成する方法膜形成を実行するための装置であって、
有機スズ酸化物膜蒸着モジュールと、
有機スズ酸化物膜パターニングモジュールと、
前記有機スズ酸化物膜蒸着モジュールおよび前記有機スズ酸化物膜パターニングモジュールを接続する真空移送モジュールと、
膜形成を実行するための命令を備えたコントローラと
を備え、
前記命令は、
前記有機スズ酸化物膜蒸着モジュールにおいて、蒸着処理によって半導体基板上に感光性の有機スズ酸化物膜を蒸着するためのコードであって、前記膜は、スズ-酸素結合、スズ-アルキル結合、および、スズ-酸素-スズ結合を含む、コードと、
真空下で前記半導体基板を前記有機スズ酸化物膜パターニングモジュールに移送するためのコードと、
前記有機スズ酸化物膜パターニングモジュールにおいて、真空雰囲気内でパターンを形成するために放射露光によって直接的に前記有機スズ酸化物膜をパターニングするためのコードと、
前記パターンを乾式現像するためのコードと
を備える、装置。 - 請求項10または請求項11に記載の装置であって、
前記有機スズ酸化物膜蒸着モジュールは、感光性の有機スズ酸化物膜を蒸着するためのリアクタチャンバを備え、
前記有機スズ酸化物膜パターニングモジュールは、30nm未満の波長の放射源を備えたフォトリソグラフィツールを備える、装置。 - 請求項12に記載の装置であって、
前記有機スズ酸化物膜蒸着モジュールは、PECVDツールである、装置。 - 請求項13に記載の装置であって、
前記有機スズ酸化物膜パターニングモジュールは、EUVリソグラフィツールである、装置。
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US20170146909A1 (en) | 2017-05-25 |
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