TW201729006A - 氣相沉積的含金屬氧化物硬遮罩之極紫外光圖案化 - Google Patents
氣相沉積的含金屬氧化物硬遮罩之極紫外光圖案化 Download PDFInfo
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- TW201729006A TW201729006A TW105137362A TW105137362A TW201729006A TW 201729006 A TW201729006 A TW 201729006A TW 105137362 A TW105137362 A TW 105137362A TW 105137362 A TW105137362 A TW 105137362A TW 201729006 A TW201729006 A TW 201729006A
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 80
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 55
- 238000007740 vapor deposition Methods 0.000 claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 238000000206 photolithography Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims description 42
- 230000008021 deposition Effects 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 35
- 238000000059 patterning Methods 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000012546 transfer Methods 0.000 claims description 19
- 238000011161 development Methods 0.000 claims description 17
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 15
- 239000002243 precursor Substances 0.000 claims description 15
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 238000001459 lithography Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 238000006471 dimerization reaction Methods 0.000 claims description 6
- -1 alkyl tin halides Chemical class 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- KWTSZCJMWHGPOS-UHFFFAOYSA-M chloro(trimethyl)stannane Chemical compound C[Sn](C)(C)Cl KWTSZCJMWHGPOS-UHFFFAOYSA-M 0.000 claims description 3
- BOEGBYDAWIJZGT-UHFFFAOYSA-N trichloromethyltin Chemical compound ClC(Cl)(Cl)[Sn] BOEGBYDAWIJZGT-UHFFFAOYSA-N 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims 1
- CZRDZAGTSCUWNG-UHFFFAOYSA-M chloro(dimethyl)tin Chemical compound C[Sn](C)Cl CZRDZAGTSCUWNG-UHFFFAOYSA-M 0.000 claims 1
- HQFPMGPCIKGRON-UHFFFAOYSA-N n-methyl-n-trimethylstannylmethanamine Chemical compound CN(C)[Sn](C)(C)C HQFPMGPCIKGRON-UHFFFAOYSA-N 0.000 claims 1
- QTOMVMUPZXYEKG-UHFFFAOYSA-N tris(dimethylamino)methyltin Chemical compound CN(C)C([Sn])(N(C)C)N(C)C QTOMVMUPZXYEKG-UHFFFAOYSA-N 0.000 claims 1
- 238000005019 vapor deposition process Methods 0.000 claims 1
- 238000013459 approach Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 58
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 229910052718 tin Inorganic materials 0.000 description 13
- 210000002381 plasma Anatomy 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 238000007872 degassing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- 239000012636 effector Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- LYRCQNDYYRPFMF-UHFFFAOYSA-N trimethyltin Chemical compound C[Sn](C)C LYRCQNDYYRPFMF-UHFFFAOYSA-N 0.000 description 2
- RGSFVWDUFIGRSM-UHFFFAOYSA-N tris(dimethylamino)methyltin(3+) Chemical compound CN(C)C([Sn+3])(N(C)C)N(C)C RGSFVWDUFIGRSM-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
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- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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Abstract
真空整合的含金屬氧化物硬遮罩之形成製程與藉由氣相沉積與光微影技術結合之膜形成步驟之相關真空整合硬體,導致以相對於目前方法實質上減少之成本使含金屬氧化物硬遮罩直接光圖案化。
Description
本揭露內容通常關於半導體處理的領域。尤其,本揭露內容關於用以形成用於EUV圖案化的含金屬氧化物硬遮罩的製程。
半導體處理中之薄膜的圖案化通常為半導體製造中的關鍵步驟。 圖案化涉及微影技術。在習知的光微影技術中(如193nm微影技術),圖案係藉由以下方式印製:從光子源發射光子至遮罩上並將圖案印至光敏光阻上,藉此在光阻中導致化學反應,其在顯影後移除光阻某些部分以形成圖案。
先進技術節點(如國際半導體技術路線圖所定義)包括22nm、16nm、及以上之節點。在16nm節點中,例如鑲嵌結構(Damascene structure)中典型的洞或線寬通常不大於約30nm。先進半導體積體電路(IC)與其他元件上之特徵部的縮放驅使微影技術改善解析度。一種這樣的方法為使用極紫外(EUV)輻射直接圖案化光敏感膜(有時稱作EUV光阻)。
典型的現行EUV光阻為聚合物基礎的化學放大光阻(chemically amplified resists, CARs)。 CARs的改善已透過藉由使用具有高表面黏著性與結構完整性減少光阻模糊(酸擴散)與圖案坍塌而完成。然而,薄的CARs指定製程視窗與複雜度,其讓使用附加膜層以支持多重步驟的圖案移轉成為必要。
CARs的替代物為直接可光圖案化的金屬氧化物膜。目前這樣的膜層為藉由旋塗式技術產生,並且消耗大量的錯合物金屬群集前驅物,而導致非常高的成本。
本揭露內容的實施態樣關於氣相沉積的含金屬氧化物硬遮罩之直接EUV光圖案化的方法與設備。這樣的方法與設備可提供次30nm圖案化的解析度。含金屬氧化物膜係在真空環境中藉由EUV曝光直接圖案化(亦即,無單獨光阻的使用)。例如,圖案化的EUV曝光使用EUV微影技術進行。該方法與相關的設備大幅減少所需之硬遮罩前驅物的量,並亦使導致相對於CARs更低淨成本之更簡單的前驅物得以使用。
在一實施例中, EUV敏感的含金屬氧化物膜於半導體基板上氣相沉積。含金屬氧化物膜隨後在真空環境中藉由EUV曝光直接圖案化,並顯影圖案以形成含金屬氧化物硬遮罩。依此方法,提供含金屬氧化物硬遮罩的形成製程,其結合藉由氣相沉積與光學微影技術之膜形成步驟,而具有以實質上降低之成本使含金屬氧化物硬遮罩直接光圖案化的結果。在另一實施態樣中,提供真空整合硬體以執行這樣的製程。
在各種實施例中,氣相沉積可藉由CVD或ALD進行。含金屬氧化物膜可為光敏感的有機金屬氧化物膜,像是有機錫氧化物(如鹵化烷基錫、烷氧基烷基錫、或醯胺基烷基錫)。一些合適的前驅物之具體範例包括三甲基氯化錫、二甲基二氯化錫(dimethyletin dichloride)、三氯甲基錫、三(二甲胺基)甲基錫(IV)、與(二甲胺基)三甲基錫(IV)。沉積可包括有機錫氧化物與RF電漿中之二氧化碳的反應,例如藉由Sn(Cl)3
CH3
與RF電漿中之二氧化碳的CVD所形成的CH3
Sn(SnO)3
。
在各種實施例中,EUV曝光造成在沉積的有機錫氧化物膜之已曝光部分中的二聚反應,例如沉積的有機錫氧化物膜可為CH3
Sn(SnO)3
,而在EUV曝光時的二聚作用可在曝光部分產生Sn2
((SnO)3
)2
。在各種實施例中,曝光提供真空環境中直接藉由EUV曝光(而無光阻的使用)之含金屬氧化物膜的圖案化,並接續顯影以形成含金屬氧化物硬遮罩。
在顯影中,移除含金屬氧化物膜的曝光或未曝光部分。可將基板移轉至真空環境外以進行圖案顯影。例如,Sn2
((SnO)3
)2
的曝光部分可藉由顯影中的熱乙醇與水在真空環境外移除。
在另一實施例中,用以進行含金屬氧化物硬遮罩形成的設備可提供真空整合以進行所述製程。設備包括含金屬氧化物膜的氣相沉積模組、含金屬氧化物膜的圖案化模組、與連接沉積模組與圖案化模組的真空輸送模組。氣相沉積模組可包括用以氣相沉積光敏感有機錫氧化物膜的反應器腔室(如PECVD工具)。圖案化模組可包括具有次30nm波長輻射源的光微影工具(如EUV微影工具)。
設備更可包括包含用以進行含金屬氧化物硬遮罩形成的指令的控制器。指令包括用於以下的編碼:在含金屬氧化物膜的氣相沉積模組中,在半導體基板上氣相沉積EUV敏感的含金屬氧化物膜;在真空下移轉基板至含金屬氧化物膜的圖案化模組;在含金屬氧化物膜的圖案化模組中,於真空環境中藉由EUV曝光直接圖案化含金屬氧化物膜;與顯影圖案以形成含金屬氧化物硬遮罩。指令更可包括用以移轉基板至EUV微影工具外以進行圖案顯影的編碼。
本揭露內容的這些及其他的特徵與優點將於以下參照相關圖式更詳細地描述。
現將詳細參照本揭露內容之具體實施例。具體實施例之範例係於附圖中說明。雖本揭露內容將結合這些具體實施例描述,然應理解不欲使將本揭露內容限制於這樣的具體實施例。相反地,欲使涵蓋可包括在本揭露內容之精神與範疇內的置換、變更、與均等物。在以下說明中,提出許多特定細節以提供對本揭露內容之徹底了解。本揭露內容可在缺少一些或所有這些特定細節下實施。在其他情況下,為人熟知的製程操作並未詳加描述以免不必要地模糊本揭露內容。前言
極紫外光(EUV)微影可藉由移動至利用目前光微影方法可達到之更小的成像源波長而將微影技術技術擴展超過其光學限制,以圖案化小臨界尺寸特徵部。在約13.5nm波長的EUV光源可用於尖端微影工具(亦稱為掃描器)。EUV輻射在許多固體與流體材料(包括石英與水蒸氣)中極度受到強吸收,並因此在真空中操作。
EUV微影通常利用使用習知光阻製程圖案化的有機硬遮罩(例如,PECVD之非晶氫化碳的可灰化硬遮罩)。在光阻曝光期間,EUV輻射於光阻與下方的基板中被吸收,產生高能光電子(約100eV)且又產生側向擴散數奈米之一級聯之低能量二次電子(約10eV)。這些電子增加光阻中化學反應的程度,此增加其EUV劑量靈敏度。然而,本質上隨機的二次電子圖案在光學圖像上重疊。此多餘的二次電子曝光導致圖案化光阻中之解析度、可觀察的線邊緣粗糙度(LER)、與線寬變化的損失。這些缺陷在後續的圖案移轉蝕刻期間,於待圖案化的材料中複製。
與絕緣體(如光阻)不同,因二次電子可藉由利用傳導電子的散射快速失去能量並熱化,故含金屬氧化物材料較不易受到二次電子曝光效應的影響。然而,用以使覆蓋的金屬膜圖案化成遮罩之光阻中的電子散射仍將造成不可接受的影響(如LER)。
如上所述,典型的現行含金屬氧化物EUV光阻為藉由液體基礎之旋塗式技術產生的聚合物基礎的化學放大光阻(CARs),其以非常高的成本消耗大量的錯合物金屬群集前驅物。
如本文所述,已發現氣相沉積的含金屬氧化物膜(如藉由CVD或ALD沉積的有機錫氧化物),特別適用於直接的EUV光圖案化。在一實施例中, EUV敏感的含金屬氧化物膜在半導體基板上氣相沉積。含金屬氧化物膜隨後在真空環境中藉由EUV曝光直接圖案化,並顯影圖案以形成含金屬氧化物硬遮罩。以此方式,提供含金屬氧化物硬遮罩的形成製程,其結合藉由氣相沉積與光學微影技術之膜形成步驟,而具有以實質上降低之成本使含金屬氧化物硬遮罩直接光圖案化的結果。
在各種實施例中,氣相基礎的沉積製程(例如,CVD或ALD)可在PECVD工具中執行,像是Lam Vector®可用以形成含金屬氧化物膜的薄膜,例如在EUVL光源(例如,13.5nm等於91.8eV)的波長,這樣包含有機化合物(有機金屬氧化化合物)的光敏感的金屬氧化物,在EUV(例如在約10至20nm的波長)中具有強吸收性。此光圖案化形成含金屬氧化物遮罩,其在後續的蝕刻期間(例如,在如Lam 2300® Kiyo®之導體蝕刻工具中)為圖案移轉層。
在一些實施例中,沉積可在與微影平台(例如,晶圓步進器,像是如由ASML of Veldhoven, NL提供的TWINSCAN NXE: 3300B®平台)整合的腔室中進行,並在真空下傳送以在曝光前不反應。與微影工具的整合係由以下事實促進:在環境氣體(如H2
O、O2
等)造成入射光子之強光學吸收性的條件下,EUVL亦需要大幅降低的壓力。氣相沉積之含金屬氧化物硬遮罩的形成
圖1A至D說明用於氣相沉積之含金屬氧化物硬遮罩的形成製程的代表性製程。通常,EUV敏感的含金屬氧化物膜在半導體基板上沉積,使得該膜可藉由EUV曝光圖案化。含金屬膜隨後藉由EUV曝光直接圖案化(亦即,缺少光阻的使用),接著圖案顯影以形成含金屬氧化物遮罩。本發明內容主要涉及含金屬氧化物膜(尤其其中金屬為錫,例如有機錫氧化物膜),其藉由極紫外光微影技術(EUV lithography, EUVL)圖案化,尤其具有使用激發錫液滴之EUV源的EUVL。本文中這樣的膜稱作EUV敏感的膜。然而,應理解其他實施例亦有可能,包括不同含金屬膜。
期望的硬遮罩金屬將為強吸收體並將具有相對寬的吸收曲線、高熔點、與低延展性/高物理穩定性、且易於沉積。為了本揭露內容之目的,注意發射給定能量之光子的材料亦將吸收該能量之光子係重要的。強吸收的光將導致期望的分解或又將使膜層敏感化,使得受曝光區域可以熱、濕式化學等移除。圖2提供使用激發的錫液滴之EUV源的發射光譜。參見Proc. Of SPIE Vol. 7636 73636-1 (2010)之R.W. Coons等人的「Comparison of EUV spectral and ion emission features from laser produced Sn and Li plasmas」;79 J. Appl. Phys., 2251 (1996)之R.C. Spitzer等人的「Conversion efficiencies from laser-produced plasmas in the extreme ultraviolet region」;與J. Appl. Phys. 59 2337 (1986)之H.C. Gerritsen等人的「Laser-generated plasma as soft x-ray source」,其關於各種金屬之發射/吸收性質的揭露內容以參考文獻合併於此。發射的光子係在13.5nm或91.8eV的量級上。因此,錫為此申請案之期望的硬遮罩金屬。
參照圖1A,顯示待圖案化之半導體基板100。在一典型的範例中,半導體基板100為包括部分形成的積體電路的矽晶圓。
圖1B說明EUV敏感的金屬氧化物膜102在半導體基板100上氣相沉積。通常在沉積之前,會將半導體基板100放置在用於真空下含金屬氧化物膜之氣相沉積的反應器腔室中。氣相沉積可藉由CVD或ALD進行。含金屬氧化物膜可為光敏金屬有機氧化物膜,像是例如有機錫氧化物(如鹵化烷基錫、烷氧基烷基錫、或醯胺基烷基錫)。一些合適的前驅物的具體範例包括三甲基氯化錫、二甲基二氯化錫、三氯甲基錫、三(二甲胺基)甲基錫(IV)、與(二甲胺基)三甲基錫(IV)。膜層可藉由PECVD或PEALD沉積(例如使用Lam Vector®工具),在ALD實施例中將錫氧化物前驅物與氧前驅物/電漿分離。沉積溫度可介於50℃與600℃之間。沉積壓力可在100與6000mtorr之間變化。含金屬氧化物膜之前驅物液體流速(例如有機錫氧化物前驅物)可介於0.01與10ccm之間,而氣體流速(CO2
、CO、Ar、N2
)可介於100與10000sccm之間。在使用高頻電漿(例如,13.56MHz、27.1MHz、或更高)之情形下,電漿功率可介於每300mm晶圓站200與1000W之間。沉積厚度可介於100與2000Å之間。
在一實施例中,含金屬氧化物膜102的覆蓋層可在電漿增強化學氣相沉積(PECVD)反應器(如可由Lam Research Corporation, Fremont, CA取得的Vector® CVD工具)中藉由合適的前驅物之沉積形成。例如,沉積可包括有機錫氧化物與RF電漿中之二氧化碳的反應,像是藉由Sn(Cl)3
CH3
與RF電漿中之二氧化碳的CVD所形成的CH3
Sn(SnO)3
。用於此沉積之合適的製程條件包括介於約250℃與350℃之間(例如約350℃)的沉積溫度,及小於6Torr(例如在350℃下維持在介於1.5與2.5Torr之間)的反應器壓力、在使用高頻電漿(例如,13.56MHz或更高)之情形下之每300mm站200W的電漿功率/偏壓、介於約100與500ccm之間的有機錫氧化物前驅物流速、與介於約1000與2000sccm之間的CO2
流速。沉積厚度可介於約250與750Å之間。
為避免因水蒸氣之裂解,含錫氧化物膜之形成與移轉在真空環境中進行。所形成的膜層隨後移轉至EUV圖案化工具,並經由直接曝光圖案化(不使用光阻)並顯影(如圖1C至D所示)。
應注意EUVL工具通常在比沉積工具更高的真空下操作。若為此情況,則期望在自沉積移轉至圖案化工具期間增加基板的真空環境,以允許基板與沉積的含金屬氧化物膜在進入圖案化工具之前脫氣。這使得圖案化工具的光學件不因來自基板的脫氣而污染。
如圖1C所示,圖案化產生材料之未曝光的含金屬氧化物膜區域102a與曝光區域102b,其一者將藉由圖案顯影移除。在各種實施例中,EUV曝光在沉積的有機錫氧化物膜的已曝光部分中導致二聚反應。例如,沉積的有機錫氧化物膜可為CH3
Sn(SnO)3
,且在EUV曝光時的二聚作用可在曝光部分中產生Sn2
((SnO)3
)2
。在各種實施例中,曝光在真空環境中藉由EUV曝光(不使用光阻)直接圖案化含金屬氧化物膜,接著顯影以形成含金屬氧化物硬遮罩。
參照圖1D,在EUV曝光之後可隨後顯影圖案。基板可轉移至真空環境之外以進行圖案顯影。例如,Sn2
((SnO)3
)2
的曝光部分102b可在真空環境之外藉由在顯影中的熱乙醇與水移除。期望可在圖案化工具之外進行圖案顯影,以避免含金屬氧化物膜裂解之任何不相容的副產物污染工具光學件。
圖3說明這些沉積、曝光/圖案化、與顯影製程(包括樣品前驅物與相關的反應)的化學。設備
圖4描繪具有真空整合之含金屬氧化物膜的氣相沉積與圖案化模組的半導體製程群集工具架構,其與真空傳送模組接合並適合執行本文所述製程。雖製程可在缺少這樣的真空整合設備下進行,然這樣的裝置在一些實施例中可具有優勢。
在多重儲存設施與工具處理模組之間「傳送」晶圓之傳送模組的配置可稱作「群集工具架構」系統。依據特定製程,含金屬氧化物膜沉積與圖案化模組為真空整合。真空傳送模組(VTM)438與四個處理模組420a至420d接合,其可個別最佳化以執行各種生產製程。作為範例,可執行處理模組420a至420d以執行凝結、沉積、蒸發、ELD、蝕刻、及/或其他半導體製程。例如,模組420a可為可自Lam Research Corporation, Fremont, CA取得的PECVD反應器(如Vector®工具),其適合用以進行如本文所述之含金屬氧化物膜的CVD沉積。且模組420b可為PEALD工具(如Lam Vector® ALD氧化物工具,適合進行如本文所述之含金屬氧化物膜的ALD沉積)。應理解圖式未必按比例繪製。
氣室442與446(亦稱為負載鎖或傳送模組)與VTM 438及圖案化模組440接合。例如,合適的圖案化模組可為TWINSCAN NXE: 3300B®平台(由ASML of Veldhoven, NL提供)。此工具結構允許工作件(如具有沉積的含金屬氧化物膜的基板)在真空下移轉,以不在曝光前反應。具有微影工具之沉積模組的整合藉由以下事實促進:在環境氣體(如H2
O、O2
等)造成入射光子之強光學吸收性的條件下,EUVL亦需要大幅降低的壓力。
氣室442可為「輸出」負載鎖,代表將基板自作為沉積模組420a的VTM 438傳送至圖案化模組440,而氣室446可為「進入」負載鎖,表示將基板自圖案化模組440傳送回VTM 438。為了基板的進入與外出,進入負載鎖446亦可提供至工具外部的接口。每一製程模組具有將模組接合至VTM 438的平面。例如,沉積製程模組420a具有平面436。在每一平面內,感測器(例如所示的感測器1至18)用以偵測當晶圓426在相對應站之間移動時的通過。圖案化模組440及氣室442與446可類似地裝配額外的平面與感測器(未顯示)。
主要VTM機器人422在模組(包括氣室442與446)之間傳送晶圓426。在一實施例中,機器人422具有一手臂,而在另一實施例中,機器人422具有兩手臂,其中每一手臂具有末端效應器424以挑選輸送用的晶圓(如晶圓426)。前端機器人444用以將晶圓426自輸出氣室442傳送至圖案化模組440中、自圖案化模組440傳送至進入氣室446。為了基板的進入與外出,前端機器人444亦可在進入負載鎖與工具外部之間輸送晶圓426。因進入氣室模組446具有匹配大氣與真空之間環境的能力,故晶圓426能在兩壓力環境之間移動而不受損。
應注意EUVL工具通常在比沉積工具更高的真空下操作。若為此情況,則期望在自沉積傳送至圖案化工具期間增加基板的真空環境,以允許基板與沉積的含金屬膜在進入圖案化工具之前脫氣。輸出氣室442可藉由將傳送的晶圓維持在較低壓力(不高於圖案化模組440中的壓力)一段時間並排出任何脫氣而提供此功能,使得圖案化工具440的光學件不受來自基板的脫氣污染。合適的輸出脫氣氣室壓力不超過1E-8 Torr。
在一些實施例中,系統控制器450(其可包括一或更多物理或邏輯控制器)控制一些或所有群集工具及/或其單獨模組的操作。應注意,控制器可在集群架構本地、或可位在製造樓層中之集群架構的外部、或位在遠端位置並經由網路連接至集群架構。系統控制器450可包括一或更多記憶裝置與一或更多處理器。處理器可包括中央處理單元(CPU)或電腦、類比及/或數位輸入/輸出連接件、步進馬達控制板、與其他類似元件。用以執行適當的控制操作之指令在處理器上執行。這些指令可在與控制器相關的記憶裝置上儲存成編碼,或可透過網路提供該等。在某些實施例中,系統控制器執行系統控制軟體。
系統控制軟體可包括用以控制任何工具或模組操作之實施態樣的應用與大小之時序的指令。系統控制軟體可以任何適當的方式配置。例如,可寫入各種處理工具元件子程序或控制物件以控制執行各種製程工具製程所需之製程工具元件的操作。系統控制軟體可以任何合適的計算可讀編程語言編碼。 在一些實施例中,系統控制軟體包括用以控制上述各種參數之輸入/輸出控制(IOC)次序指令。例如,半導體製造製程之每一階段可包括以系統控制器執行的一或更多指令。例如,用以設定用於沉積、圖案化及/或顯影階段之製程條件的指令可包括在相對應的配方階段中。結論
EUV敏感的含金屬氧化物膜可在半導體基板上氣相沉積。 這樣的含金屬氧化物膜可隨後在真空環境中藉由EUV曝光直接圖案化,並顯影圖案以形成含金屬氧化物硬遮罩。以此方式,提供含金屬氧化物硬遮罩的形成製程,其結合藉由氣相沉積與光學微影技術之膜形成的步驟,而具有以實質上降低之成本使含金屬氧化物硬遮罩直接光圖案化的結果。
應理解,本文所述範例與實施例僅為說明性目的,並向該領域之技術人員建議各種變更或改變。雖各種細節為清楚之目的予以省略,然可實施各種設計替代例。因此,本範例應視為說明性而非限制性,且本揭露內容不受限於本文所提出之細節,而是可在隨附請求項之範圍中進行變更。
100‧‧‧基板
102‧‧‧膜層
102a‧‧‧區域
102b‧‧‧區域
420a‧‧‧模組
420b‧‧‧模組
420c‧‧‧模組
420d‧‧‧模組
422‧‧‧機械人
424‧‧‧效應器
426‧‧‧晶圓
436‧‧‧面
438‧‧‧模組
440‧‧‧模組
442‧‧‧氣室
444‧‧‧機械人
446‧‧‧氣室
450‧‧‧系統控制器
102‧‧‧膜層
102a‧‧‧區域
102b‧‧‧區域
420a‧‧‧模組
420b‧‧‧模組
420c‧‧‧模組
420d‧‧‧模組
422‧‧‧機械人
424‧‧‧效應器
426‧‧‧晶圓
436‧‧‧面
438‧‧‧模組
440‧‧‧模組
442‧‧‧氣室
444‧‧‧機械人
446‧‧‧氣室
450‧‧‧系統控制器
圖1A至D說明氣相沉積之含金屬氧化物硬遮罩的形成製程的代表性流程。
圖2提供使用激發的錫液滴之EUV源的發射光譜。
圖3說明所揭沉積、曝光/圖案化、與顯影製程(包括樣品前驅物與相關反應)之實施例的化學。
圖4描繪具有與真空輸送模組接合之氣相沉積與圖案化模組之半導體製程群集架構,其適合在真空整合設備中執行本文所述的製程。
100‧‧‧基板
102a‧‧‧區域
102b‧‧‧區域
Claims (20)
- 一種含金屬氧化物硬遮罩的形成方法,包含: 藉由一氣相沉積製程,在一半導體基板上沉積一EUV敏感的含金屬氧化物膜; 使該含金屬氧化物膜之一部分對EUV曝光,以在該金屬氧化物膜中形成一圖案; 顯影該含金屬氧化物膜中之該圖案,以移除已曝光或未曝光的部分其中一者,以形成該含金屬氧化物硬遮罩。
- 如申請專利範圍第1項之含金屬氧化物硬遮罩的形成方法,其中該沉積係以CVD或ALD進行。
- 如申請專利範圍第2項之含金屬氧化物硬遮罩的形成方法,其中該含金屬氧化物膜係一光敏感金屬有機氧化物之膜。
- 如申請專利範圍第3項之含金屬氧化物硬遮罩的形成方法,其中該金屬有機氧化物為有機錫氧化物。
- 如申請專利範圍第4項之含金屬氧化物硬遮罩的形成方法,其中該沉積包含選擇自以下者組成之群組的有機錫氧化物沉積前驅物:鹵化烷基錫、烷氧基烷基錫、與醯胺基烷基錫。
- 如申請專利範圍第5項之含金屬氧化物硬遮罩的形成方法,其中該沉積包含選擇自以下者組成之群組的沉積前驅物:三甲基氯化錫、二甲基二氯化錫、三氯甲基錫、三(二甲胺基)甲基錫(IV)、與(二甲胺基)三甲基錫(IV)。
- 如申請專利範圍第4項之含金屬氧化物硬遮罩的形成方法,其中該沉積包含有機錫氧化物與RF電漿中之二氧化碳的反應。
- 如申請專利範圍第7項之含金屬氧化物硬遮罩的形成方法,其中沉積的該有機錫氧化物膜包含由Sn(Cl)3 CH3 與RF電漿中之二氧化碳的CVD所形成的CH3 Sn(SnO)3 。
- 如申請專利範圍第4項之含金屬氧化物硬遮罩的形成方法,其中EUV曝光在沉積的該有機錫氧化物膜之已曝光部分中導致一二聚反應。
- 如申請專利範圍第9項之含金屬氧化物硬遮罩的形成方法,其中沉積的該有機錫氧化物膜包含CH3 Sn(SnO)3 ,且在EUV曝光時的二聚作用產生Sn2 ((SnO)3 )2 。
- 如申請專利範圍第10項之含金屬氧化物硬遮罩的形成方法,其中在顯影步驟中,移除Sn2 ((SnO)3 )2 曝光部分。
- 如申請專利範圍第11項之含金屬氧化物硬遮罩的形成方法,其中在顯影步驟中,該Sn2 ((SnO)3 )2 曝光部分係藉由熱乙醇與水移除。
- 如申請專利範圍第12項之含金屬氧化物硬遮罩的形成方法,其中該基板係傳送至真空環境之外以進行該圖案之顯影。
- 如申請專利範圍第1項之含金屬氧化物硬遮罩的形成方法,其中該曝光係在真空環境中藉由EUV曝光提供該含金屬氧化物膜的直接圖案化。
- 如申請專利範圍第1項之含金屬氧化物硬遮罩的形成方法,其中該半導體基板為包括部分形成的積體電路之一矽晶圓,且更包含: 在沉積之前,在用於含金屬氧化物膜沉積之一第一反應器腔室中提供該半導體基板;及 接續沉積之後,在真空下傳送該基板至用以圖案化之一微影處理腔室。
- 一種用以進行含金屬氧化物硬遮罩形成的設備,該設備包含: 一含金屬氧化物膜之氣相基礎的沉積模組; 一含金屬氧化物膜的圖案化模組; 一真空傳送模組,該真空傳送模組連接該沉積模組與該圖案化模組;及 一控制器,該控制器包含用以進行含金屬氧化物硬遮罩形成的指令,該指令包含用於以下者之編碼: 在該含金屬氧化物膜之氣相基礎的沉積模組中,在一半導體基板上藉由一氣相基礎之沉積製程沉積一EUV敏感的含金屬氧化物膜; 在真空下傳送該基板至該含金屬氧化物膜的圖案化模組; 在該含金屬氧化物膜的圖案化模組中,於真空環境中藉由EUV曝光直接地圖案化該含金屬氧化物膜;及 顯影該圖案以形成該含金屬氧化物硬遮罩。
- 如申請專利範圍第16項之用以進行含金屬氧化物硬遮罩形成的設備,其中: 該沉積模組包含用以氣相沉積一光敏有機錫氧化物膜的反應器腔室;及 該圖案化模組包含具有次30nm波長輻射源之一光微影工具。
- 如申請專利範圍第17項之用以進行含金屬氧化物硬遮罩形成的設備,其中該沉積模組為一PECVD工具。
- 如申請專利範圍第18項之用以進行含金屬氧化物硬遮罩形成的設備,其中該圖案化模組為一EUV微影工具。
- 如申請專利範圍第19項之用以進行含金屬氧化物硬遮罩形成的設備,其中該指令更包含用於以下者之指令:傳送該基板至該EUV微影工具之外以進行該圖案的顯影。
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2016
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- 2016-11-16 TW TW105137362A patent/TWI730015B/zh active
- 2016-11-16 TW TW110118172A patent/TWI787829B/zh active
- 2016-11-16 KR KR1020160152489A patent/KR20170066225A/ko not_active Application Discontinuation
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2021
- 2021-06-22 JP JP2021102822A patent/JP7282830B2/ja active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111123652A (zh) * | 2018-10-30 | 2020-05-08 | 台湾积体电路制造股份有限公司 | 微影图案化的方法 |
US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
CN114026501A (zh) * | 2019-06-26 | 2022-02-08 | 朗姆研究公司 | 利用卤化物化学品的光致抗蚀剂显影 |
TWI837391B (zh) * | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
US11988965B2 (en) | 2020-01-15 | 2024-05-21 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
Also Published As
Publication number | Publication date |
---|---|
TW202134467A (zh) | 2021-09-16 |
US20170146909A1 (en) | 2017-05-25 |
KR20170066225A (ko) | 2017-06-14 |
US9996004B2 (en) | 2018-06-12 |
JP7282830B2 (ja) | 2023-05-29 |
TWI730015B (zh) | 2021-06-11 |
JP6902849B2 (ja) | 2021-07-14 |
JP2021165842A (ja) | 2021-10-14 |
JP2017116923A (ja) | 2017-06-29 |
TWI787829B (zh) | 2022-12-21 |
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