JP7213642B2 - レジスト膜の製造方法 - Google Patents
レジスト膜の製造方法 Download PDFInfo
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- JP7213642B2 JP7213642B2 JP2018166018A JP2018166018A JP7213642B2 JP 7213642 B2 JP7213642 B2 JP 7213642B2 JP 2018166018 A JP2018166018 A JP 2018166018A JP 2018166018 A JP2018166018 A JP 2018166018A JP 7213642 B2 JP7213642 B2 JP 7213642B2
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- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
Description
[レジスト膜の製造方法]
図1は、本開示の第1の実施形態におけるレジスト膜の製造方法の一例を示すフローチャートである。
被処理体Wの温度:室温~150℃
チャンバ11内の圧力:0.05~760Torr
前駆体ガスの流量:5~500sccm
浸潤時間:3~30分
被処理体Wの温度:90℃
チャンバ11内の圧力:2Torr
前駆体ガスの流量:10sccm
浸潤時間:30分
被処理体Wの温度:110℃
チャンバ11内の圧力:15Torr
前駆体ガスの流量:500sccm
浸潤時間:3分
被処理体Wの温度:室温~150℃
チャンバ11内の圧力:0.05~760Torr
水蒸気の流量:10~100sccm
暴露時間:1~10分
被処理体Wの温度:90℃
チャンバ11内の圧力:2Torr
水蒸気の流量:10sccm
浸潤時間:10分
被処理体Wの温度:110℃
チャンバ11内の圧力:15Torr
前駆体ガスの流量:100sccm
浸潤時間:1分
図5は、レジスト膜103の深さ方向におけるテルルの分布の一例を示す図である。図5には、テルルの同位体である128Teおよび130Teの発光強度が示されている。本実施形態における改質処理が行われる前のレジスト膜103には、例えば図5の太い破線および細い破線に示されるように、ある程度の量のテルルが含まれている。これに対し、改質処理が行われた後では、例えば図5の太い実線および細い実線に示されるように、レジスト膜103内のテルルの量は、改質処理前よりも増加している。従って、前駆体のガスによる浸潤と、水蒸気への暴露とを行うことにより、レジスト膜103内にテルルの原子を入り込ませることができる。
第1の実施形態のレジスト膜103の製造方法では、浸潤工程と暴露工程とが1回ずつ行われたが、本実施形態のレジスト膜103の製造方法では、浸潤工程と暴露工程とが交互にそれぞれ2回以上行われる点が第1の実施形態とは異なる。
被処理体Wの温度:90℃
チャンバ11内の圧力:2Torr
前駆体ガスの流量:10sccm
浸潤時間:15分
被処理体Wの温度:110℃
チャンバ11内の圧力:15Torr
前駆体ガスの流量:500sccm
浸潤時間:90秒
被処理体Wの温度:90℃
チャンバ11内の圧力:2Torr
水蒸気の流量:10sccm
浸潤時間:5分
被処理体Wの温度:110℃
チャンバ11内の圧力:15Torr
前駆体ガスの流量:100sccm
浸潤時間:30秒
なお、本願に開示された技術は、上記した実施形態に限定されるものではなく、その要旨の範囲内で数々の変形が可能である。
10 改質装置
11 チャンバ
12 開口
13 ゲートバルブ
14 排気口
15 載置台
15a 温度制御機構
16 配管
17 拡散室
18 シャワープレート
18a 吐出口
20a、20b、20c 原料供給源
21a、21b 気化器
22a、22b、22c 流量制御器
23a、23b、23c バルブ
24 供給配管
100 シリコン基板
101 SOC
102 SOG
103 レジスト膜
30 排気装置
40 制御装置
Claims (5)
- エッチング対象膜の上に金属粒子を含まない液体状の有機系の樹脂材料を用いてレジスト膜を積層することにより被処理体を作成する積層工程と、
前記被処理体を、原子1個当たりのEUV光の吸収率が炭素よりも高い金属を含有する前駆体のガスに晒すことにより、前記レジスト膜に前記金属を浸潤させる浸潤工程と、
前記被処理体を水蒸気の雰囲気に暴露する暴露工程と、
前記被処理体をEUV光で露光する露光工程と
を含み、
前記金属は、スズまたはテルルであるレジスト膜の製造方法。 - 前記浸潤工程の後であって、前記暴露工程の前に、不活性ガスにより前記被処理体の表面をパージする第1のパージ工程をさらに含む請求項1に記載のレジスト膜の製造方法。
- 前記暴露工程の後であって、前記露光工程の前に、不活性ガスにより前記被処理体の表面をパージする第2のパージ工程をさらに含む請求項2に記載のレジスト膜の製造方法。
- 前記浸潤工程、前記第1のパージ工程、前記暴露工程、および前記第2のパージ工程は、この順番で2回以上繰り返される請求項3に記載のレジスト膜の製造方法。
- 前記前駆体は、トリブチルスズ、ビス(トリメチルシリル)テルリド、またはジイソプロピルテルルである請求項1から4のいずれか一項に記載のレジスト膜の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2018166018A JP7213642B2 (ja) | 2018-09-05 | 2018-09-05 | レジスト膜の製造方法 |
KR1020217008706A KR102473382B1 (ko) | 2018-09-05 | 2019-08-22 | 레지스트막의 제조 방법 |
PCT/JP2019/032733 WO2020050035A1 (ja) | 2018-09-05 | 2019-08-22 | レジスト膜の製造方法 |
US17/273,183 US20210325780A1 (en) | 2018-09-05 | 2019-08-22 | Method for producing resist film |
TW108131625A TWI822845B (zh) | 2018-09-05 | 2019-09-03 | 阻劑膜之製造方法 |
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JP2018166018A JP7213642B2 (ja) | 2018-09-05 | 2018-09-05 | レジスト膜の製造方法 |
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JP2020038320A JP2020038320A (ja) | 2020-03-12 |
JP7213642B2 true JP7213642B2 (ja) | 2023-01-27 |
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US (1) | US20210325780A1 (ja) |
JP (1) | JP7213642B2 (ja) |
KR (1) | KR102473382B1 (ja) |
TW (1) | TWI822845B (ja) |
WO (1) | WO2020050035A1 (ja) |
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JP2022507368A (ja) | 2018-11-14 | 2022-01-18 | ラム リサーチ コーポレーション | 次世代リソグラフィにおいて有用なハードマスクを作製する方法 |
DE102020129681B4 (de) * | 2020-03-30 | 2023-03-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Verfahren zur herstellung einer halbleitervorrichtung |
US11822237B2 (en) * | 2020-03-30 | 2023-11-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device |
US20220028684A1 (en) * | 2020-06-18 | 2022-01-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist layer outgassing prevention |
WO2022182473A1 (en) * | 2021-02-23 | 2022-09-01 | Lam Research Corporation | Halogen-and aliphatic-containing organotin photoresists and methods thereof |
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JP2815024B2 (ja) * | 1989-11-13 | 1998-10-27 | 富士通株式会社 | レジストパターンの形成方法 |
JP2549317B2 (ja) * | 1990-03-29 | 1996-10-30 | ホーヤ株式会社 | レジストパターンの形成方法 |
JP3280061B2 (ja) | 1992-03-13 | 2002-04-30 | 理想科学工業株式会社 | 孔版原紙給送排版装置 |
JPH10321644A (ja) * | 1997-05-19 | 1998-12-04 | Sony Corp | 半導体装置の製造方法 |
JP4836363B2 (ja) * | 2000-08-11 | 2011-12-14 | 和之 杉田 | レジストパターンの形成方法 |
US7972957B2 (en) * | 2006-02-27 | 2011-07-05 | Taiwan Semiconductor Manufacturing Company | Method of making openings in a layer of a semiconductor device |
US7674573B2 (en) * | 2006-08-08 | 2010-03-09 | Canon Kabushiki Kaisha | Method for manufacturing layered periodic structures |
US20080203386A1 (en) * | 2007-02-28 | 2008-08-28 | Ulrich Klostermann | Method of forming a patterned resist layer for patterning a semiconductor product |
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JP5534701B2 (ja) * | 2009-04-14 | 2014-07-02 | 三菱電機株式会社 | 半導体装置 |
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EP2367203A1 (en) * | 2010-02-26 | 2011-09-21 | Samsung LED Co., Ltd. | Semiconductor light emitting device having multi-cell array and method for manufacturing the same |
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KR20180054509A (ko) * | 2015-04-22 | 2018-05-24 | 알렉스 필립 그레이엄 로빈손 | 감도 강화 포토레지스트 |
US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
JP2019053228A (ja) * | 2017-09-15 | 2019-04-04 | 東芝メモリ株式会社 | パターン形成方法及びパターン形成材料 |
US10395925B2 (en) * | 2017-12-28 | 2019-08-27 | International Business Machines Corporation | Patterning material film stack comprising hard mask layer having high metal content interface to resist layer |
US10845704B2 (en) * | 2018-10-30 | 2020-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet photolithography method with infiltration for enhanced sensitivity and etch resistance |
KR20220029663A (ko) * | 2019-07-02 | 2022-03-08 | 오지 홀딩스 가부시키가이샤 | 패턴 형성 방법, 레지스트 재료, 및 패턴 형성 장치 |
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- 2019-08-22 KR KR1020217008706A patent/KR102473382B1/ko active IP Right Grant
- 2019-08-22 WO PCT/JP2019/032733 patent/WO2020050035A1/ja active Application Filing
- 2019-08-22 US US17/273,183 patent/US20210325780A1/en active Pending
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TWI822845B (zh) | 2023-11-21 |
JP2020038320A (ja) | 2020-03-12 |
US20210325780A1 (en) | 2021-10-21 |
TW202031756A (zh) | 2020-09-01 |
KR20210046748A (ko) | 2021-04-28 |
KR102473382B1 (ko) | 2022-12-06 |
WO2020050035A1 (ja) | 2020-03-12 |
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