JP2020038320A - レジスト膜の製造方法 - Google Patents
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Abstract
Description
[レジスト膜の製造方法]
図1は、本開示の第1の実施形態におけるレジスト膜の製造方法の一例を示すフローチャートである。
被処理体Wの温度:室温〜150℃
チャンバ11内の圧力:0.05〜760Torr
前駆体ガスの流量:5〜500sccm
浸潤時間:3〜30分
被処理体Wの温度:90℃
チャンバ11内の圧力:2Torr
前駆体ガスの流量:10sccm
浸潤時間:30分
被処理体Wの温度:110℃
チャンバ11内の圧力:15Torr
前駆体ガスの流量:500sccm
浸潤時間:3分
被処理体Wの温度:室温〜150℃
チャンバ11内の圧力:0.05〜760Torr
水蒸気の流量:10〜100sccm
暴露時間:1〜10分
被処理体Wの温度:90℃
チャンバ11内の圧力:2Torr
水蒸気の流量:10sccm
浸潤時間:10分
被処理体Wの温度:110℃
チャンバ11内の圧力:15Torr
前駆体ガスの流量:100sccm
浸潤時間:1分
図5は、レジスト膜103の深さ方向におけるテルルの分布の一例を示す図である。図5には、テルルの同位体である128Teおよび130Teの発光強度が示されている。本実施形態における改質処理が行われる前のレジスト膜103には、例えば図5の太い破線および細い破線に示されるように、ある程度の量のテルルが含まれている。これに対し、改質処理が行われた後では、例えば図5の太い実線および細い実線に示されるように、レジスト膜103内のテルルの量は、改質処理前よりも増加している。従って、前駆体のガスによる浸潤と、水蒸気への暴露とを行うことにより、レジスト膜103内にテルルの原子を入り込ませることができる。
第1の実施形態のレジスト膜103の製造方法では、浸潤工程と暴露工程とが1回ずつ行われたが、本実施形態のレジスト膜103の製造方法では、浸潤工程と暴露工程とが交互にそれぞれ2回以上行われる点が第1の実施形態とは異なる。
被処理体Wの温度:90℃
チャンバ11内の圧力:2Torr
前駆体ガスの流量:10sccm
浸潤時間:15分
被処理体Wの温度:110℃
チャンバ11内の圧力:15Torr
前駆体ガスの流量:500sccm
浸潤時間:90秒
被処理体Wの温度:90℃
チャンバ11内の圧力:2Torr
水蒸気の流量:10sccm
浸潤時間:5分
被処理体Wの温度:110℃
チャンバ11内の圧力:15Torr
前駆体ガスの流量:100sccm
浸潤時間:30秒
なお、本願に開示された技術は、上記した実施形態に限定されるものではなく、その要旨の範囲内で数々の変形が可能である。
10 改質装置
11 チャンバ
12 開口
13 ゲートバルブ
14 排気口
15 載置台
15a 温度制御機構
16 配管
17 拡散室
18 シャワープレート
18a 吐出口
20a、20b、20c 原料供給源
21a、21b 気化器
22a、22b、22c 流量制御器
23a、23b、23c バルブ
24 供給配管
100 シリコン基板
101 SOC
102 SOG
103 レジスト膜
30 排気装置
40 制御装置
Claims (7)
- エッチング対象膜の上にレジスト膜を積層することにより被処理体を作成する積層工程と、
前記被処理体を、炭素よりもEUV光の吸収率が高い金属を含有する前駆体のガスに晒すことにより、前記レジスト膜に前記金属を浸潤させる浸潤工程と
を含むレジスト膜の製造方法。 - 前記浸潤工程の後に、前記被処理体を水蒸気の雰囲気に暴露する暴露工程をさらに含む請求項1に記載のレジスト膜の製造方法。
- 前記浸潤工程の後であって、前記暴露工程の前に、不活性ガスにより前記被処理体の表面をパージする第1のパージ工程をさらに含む請求項2に記載のレジスト膜の製造方法。
- 前記暴露工程の後に、不活性ガスにより前記被処理体の表面をパージする第2のパージ工程をさらに含む請求項3に記載のレジスト膜の製造方法。
- 前記浸潤工程、前記第1のパージ工程、前記暴露工程、および前記第2のパージ工程は、この順番で2回以上繰り返される請求項4に記載のレジスト膜の製造方法。
- 前記金属は、スズまたはテルルである請求項1から5のいずれか一項に記載のレジスト膜の製造方法。
- 前記前駆体は、トリブチルスズ、ビス(トリメチルシリル)テルリド、またはジイソプロピルテルルである請求項1から6のいずれか一項に記載のレジスト膜の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2018166018A JP7213642B2 (ja) | 2018-09-05 | 2018-09-05 | レジスト膜の製造方法 |
KR1020217008706A KR102473382B1 (ko) | 2018-09-05 | 2019-08-22 | 레지스트막의 제조 방법 |
US17/273,183 US20210325780A1 (en) | 2018-09-05 | 2019-08-22 | Method for producing resist film |
PCT/JP2019/032733 WO2020050035A1 (ja) | 2018-09-05 | 2019-08-22 | レジスト膜の製造方法 |
TW108131625A TWI822845B (zh) | 2018-09-05 | 2019-09-03 | 阻劑膜之製造方法 |
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JP2018166018A JP7213642B2 (ja) | 2018-09-05 | 2018-09-05 | レジスト膜の製造方法 |
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JP2020038320A true JP2020038320A (ja) | 2020-03-12 |
JP7213642B2 JP7213642B2 (ja) | 2023-01-27 |
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JP (1) | JP7213642B2 (ja) |
KR (1) | KR102473382B1 (ja) |
TW (1) | TWI822845B (ja) |
WO (1) | WO2020050035A1 (ja) |
Cited By (3)
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CN113050369A (zh) * | 2020-03-30 | 2021-06-29 | 台湾积体电路制造股份有限公司 | 制造半导体器件的方法 |
KR20210122649A (ko) * | 2020-03-30 | 2021-10-12 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 디바이스 제조 방법 |
US12002675B2 (en) | 2020-06-18 | 2024-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer outgassing prevention |
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WO2020102085A1 (en) | 2018-11-14 | 2020-05-22 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
CN116705595A (zh) | 2020-01-15 | 2023-09-05 | 朗姆研究公司 | 用于光刻胶粘附和剂量减少的底层 |
KR20230148424A (ko) * | 2021-02-23 | 2023-10-24 | 램 리써치 코포레이션 | 할로겐-함유 유기주석 포토레지스트 및 지방족-함유 유기주석 포토레지스트 및 이의 방법들 |
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CN113050369A (zh) * | 2020-03-30 | 2021-06-29 | 台湾积体电路制造股份有限公司 | 制造半导体器件的方法 |
KR20210122649A (ko) * | 2020-03-30 | 2021-10-12 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 디바이스 제조 방법 |
KR102405489B1 (ko) * | 2020-03-30 | 2022-06-08 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 반도체 디바이스 제조 방법 |
TWI804806B (zh) * | 2020-03-30 | 2023-06-11 | 台灣積體電路製造股份有限公司 | 製造半導體元件的方法 |
US11822237B2 (en) | 2020-03-30 | 2023-11-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device |
US12002675B2 (en) | 2020-06-18 | 2024-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer outgassing prevention |
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WO2020050035A1 (ja) | 2020-03-12 |
TW202031756A (zh) | 2020-09-01 |
US20210325780A1 (en) | 2021-10-21 |
KR102473382B1 (ko) | 2022-12-06 |
TWI822845B (zh) | 2023-11-21 |
JP7213642B2 (ja) | 2023-01-27 |
KR20210046748A (ko) | 2021-04-28 |
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