CN102859034B - 垂直直列cvd系统 - Google Patents

垂直直列cvd系统 Download PDF

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CN102859034B
CN102859034B CN201180020889.4A CN201180020889A CN102859034B CN 102859034 B CN102859034 B CN 102859034B CN 201180020889 A CN201180020889 A CN 201180020889A CN 102859034 B CN102859034 B CN 102859034B
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chamber body
microwave antenna
coupled
microwave
source
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CN102859034A (zh
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栗田真一
J·库德拉
S·安瓦尔
J·M·怀特
任东吉
H·沃尔夫
D·兹瓦罗
稻川真
I·莫里
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Applied Materials Inc
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Abstract

本发明大体上关于一种垂直CVD系统，所述CVD系统具有能够处理多个基板的处理腔室。尽管将所述多个基板安置于所述处理腔室内的处理源的相对侧上，但未使处理环境彼此隔离。所述处理源为水平居中的垂直等离子体发生器，所述垂直等离子体发生器允许在所述等离子体发生器的任一侧上同时但以彼此独立的方式处理多个基板。将所述系统配置为双系统，凭借所述双系统将各自具有它们自己的处理腔室的两个相同的处理线配置为彼此邻近。多个机器人用以从处理系统装载且卸载所述基板。每一个机器人可使用所述系统内的两个处理线。

Description

垂直直列CVD系统
发明背景
发明领域
本发明的实施例大体上关于一种垂直化学气相沉积(CVD)系统。
现有技术的描述
CVD为这样一种工艺，凭借所述工艺将化学前驱物引入处理腔室中、发生化学反应以形成预定化合物或材料，及将所述化学前驱物沉积于处理腔室内的基板上。存在若干种CVD工艺。一种CVD工艺为等离子体增强化学气相沉积(PECVD)，凭借所述工艺在腔室中点燃等离子体以增强前驱物之间的反应。可通过使用感应耦合的等离子体源或电容耦合的等离子体源而完成PECVD。
CVD工艺可用以处理大面积基板，诸如平板显示器或太阳电池板。CVD可用以沉积多层，诸如用于晶体管的硅基膜。在此项技术中需要一种降低平板显示器装置的制造成本的方法及设备。
发明内容
本发明大体上关于一种垂直CVD系统，所述系统具有能够处理多个基板的处理腔室。尽管将所述多个基板安置于所述处理腔室内的处理源的相对侧上，但未使处理环境彼此隔离。所述处理源为水平居中心的垂直等离子体发生器，所述垂直等离子体发生器允许在所述等离子体发生器的任一侧上同时但以彼此独立的方式处理多个基板。将所述系统配置为双系统，凭借所述双系统，将各自具有它们自己的处理腔室的两个相同的处理线配置为彼此邻近。多个机器人用以从处理系统装载且卸载基板。每一个机器人可使用所述系统内的两个处理线。
在一个实施例中，一种设备包括：腔室主体；多个等离子体发生器；第一波导，耦合至每一个等离子体发生器的第一端；第二波导，耦合至每一个等离子体发生器的第二端；第一电源，耦合至所述第一波导，所述第一电源安置于所述腔室主体外；以及第二电源，耦合至所述第二波导。所述多个等离子体发生器水平位于所述腔室主体内的中心且在所述腔室主体内垂直延伸，以使得在所述腔室主体内保留足够的空间用于在所述多个等离子体发生器的相对侧上处理的一个或多个基板。每一个等离子体发生器具有第一端，所述第一端邻近于所述腔室主体的底部；以及第二端，所述第二端邻近于所述腔室主体的顶部。第二电源安置于所述腔室主体外。第二电源以交错图案进行共同配置，以使得邻近的第二波导沿相反方向从等离子体发生器延伸至相应的第二电源。
在另一个实施例中，一种设备包括：腔室主体；多个等离子体发生器；第一波导，耦合至每一个等离子体发生器的第一端；第二波导，耦合至每一个等离子体发生器的第二端；第一电源，耦合至所述第一波导，所述第一电源安置于所述腔室主体外；以及第二电源，耦合至所述第二波导。所述多个等离子体发生器水平位于所述腔室主体内的中心且在所述腔室主体内垂直延伸，以使得在所述腔室主体内保留足够的空间用于在所述多个等离子体发生器的相对侧上处理的一个或多个基板。每一个等离子体发生器具有第一端，所述第一端邻近于所述腔室主体的底部；以及第二端，所述第二端邻近于所述腔室主体的顶部。第二电源安置于所述腔室主体外。第二电源以一图案进行共同配置，以使得邻近的第二波导沿相同方向从等离子体发生器延伸至相应的第二电源。
在另一个实施例中，一种设备包括：腔室主体；多个等离子体发生器；第一倾斜波导，耦合至每一个等离子体发生器的第一端；第二倾斜波导，耦合至每一个等离子体发生器的第二端；第一电源，耦合至所述第一波导，所述第一电源安置于所述腔室主体外；以及第二电源，耦合至所述第二波导。所述多个等离子体发生器水平位于所述腔室主体内的中心且在所述腔室主体内垂直延伸，以使得在所述腔室主体内保留足够的空间用于在所述多个等离子体发生器的相对侧上处理的一个或多个基板。每一个等离子体发生器具有第一端，所述第一端邻近于所述腔室主体的底部；以及第二端，所述第二端邻近于所述腔室主体的顶部。第二电源安置于所述腔室主体外。第二电源以交错图案进行共同配置，以使得每一个第二波导沿所述腔室主体的一侧及沿所述腔室主体的一顶壁向上延伸至每一个等离子体发生器的所述第一端。
附图简述
因此，可详细理解本发明的上述特征结构的方式，即上文简要概述的本发明的更特定描述可参照实施例进行，其中一些实施例示于附图中。然而，应注意，附图仅示出本发明的典型实施例，且因此不会被视为限制本发明的范围，因为本发明可允许其它同等有效的实施例。
图1为根据一个实施例的处理系统的示意图。
图2为图1的处理系统的示意俯视图。
图3为图1的处理系统的示意侧视图。
图4为图1的处理腔室的近视图。
图5为图1的处理系统的示意后视图。
图6A为图1的处理腔室的示意横截面图。
图6B为图1的处理腔室的部分侧视图。
图7为用于图1的处理系统的抽空系统的图解说明。
图8为图1的处理腔室的等距视图。
图9为用于图1的处理系统的基板定序的俯视图解说明。
图10A－10C为图1的处理腔室的示意图。
图11A及11B为根据另一个实施例的处理腔室的示意图。
图12A及12B为根据另一个实施例的处理腔室的示意图。
图13A及13B为根据另一个实施例的处理腔室的示意图。
为促进理解，在可能的情况下已使用相同标记来指定为附图所共享的相同元件。预期可将一个实施例的元件及特征结构有益地并入未进一步叙述的其它实施例中。
详细描述
本发明大体上关于一种垂直CVD系统，所述系统具有能够处理多个基板的处理腔室。尽管将所述多个基板安置于所述处理腔室内的处理源的相对侧上，但未使处理环境彼此隔离。所述处理源为水平居中的垂直等离子体发生器，所述垂直等离子体发生器允许在所述等离子体发生器的任一侧上同时但以彼此独立的方式处理多个基板。将所述系统配置为双系统，凭借所述双系统，将各自具有它们自己的处理腔室的两个相同处理线配置为彼此邻近。多个机器人用以从处理系统装载且卸载基板。每一个机器人可使用所述系统内的两个处理线。
水平居中的垂直等离子体发生器为具有在处理腔室内垂直的等离子体源的等离子体发生器。应理解，由于垂直，所以等离子体源从接近或处于腔室底部的第一端延伸至接近或处于腔室顶部的第二端。应理解，由于水平居中，所以等离子体源等间隔地介于处理腔室的两个壁或两个端之间。
可在从加利福尼Santa Clara的应用材料公司获得的改进的AKT Aristo系统中通过使用垂直CVD腔室来实施本文所论述的实施例。应理解，也可在其它系统（包括由其它制造商出售的那些系统）中实施实施例。
图1为根据一个实施例的垂直、线性CVD系统100的示意图。系统100可经设置尺寸以在沉积2,000埃厚度的氮化硅膜时处理具有大于约90,000mm2的表面积的基板，且能够每小时处理大于90个基板。系统100较佳包括两个分离的处理线114A、114B，所述处理线114A、114B通过公共系统控制平台112耦合在一起以形成双处理线配置/布局。公共电源（诸如，交流电源）、公共及/或共享泵送及排气组件和公共气体面板可用于双处理线114A、114B。对每小时大于90个基板的系统总量而言，每一个处理线114A、114B每小时可处理大于45个基板。也预期，可使用单个处理线或大于两个处理线来配置系统。
用于垂直基板处理的双处理线114A、114B存在若干益处。因为腔室是垂直配置的，所以系统100的占位大约与单个、常规水平处理线相同。因此，在大致相同的占位内，存在两个处理线114A、114B，这有益于制造商在半导体代工厂中保存占地面积。为帮助理解术语“垂直”的含义，考虑平板显示器。诸如计算机监视器之类的平板显示器具有长度、宽度及厚度。当平板显示器为垂直时，长度或宽度从地平面垂直延伸，而厚度平行于地平面。相反地，当平板显示器为水平时，长度与宽度都平行于地平面，而厚度垂直于地平面。对大面积的基板而言，基板的长度及宽度比基板的厚度大许多倍。
每一个处理线114A、114B包括基板堆栈模块102A、102B，从基板堆栈模块102A、102B取回新的基板（即，尚未在系统100内处理的基板）且存储经处理的基板。大气机器人104A、104B从基板堆栈模块102A、102B取回基板且将基板置放于双基板装载站106A、106B中。应理解，尽管基板堆栈模块102A、102B图示为具有沿水平定向堆栈的基板，但安置于基板堆栈模块102A、102B中的基板可类似于基板在双基板装载站106A、106B中所保持的方式沿垂直定向维持。随后，将新的基板移入双基板装载锁定腔室108A、108B中，且随后移动至双基板处理腔室1010A、1010B。随后，现在处理的基板穿过双基板装载锁定腔室108A、108B中的一个而返回至双基板装载站106A、106B中的一个，其中所述基板由大气机器人104A、104B中的一个取回且返回至基板堆栈模块102A、102B中的一个。
图2为图1的实施例的平面图。将同时就两个处理线114A、114B来论述顺序，即便基板仅沿一个路径下降。每一个机器人104A、104B可沿公共轨道202移动。如将在下文所论述地，每一个机器人104A、104B可使用两个基板装载站106A、106B。有时候，用以经由处理线114A、114B输送基板的基板载体将需要维护用于修理、清洁或替换。因此，基板载体维护站204A、204B沿与装载锁定腔室108A、108B相对的处理线114A、114B耦合至处理腔室110A、110B。
为抽空装载锁定腔室108A、108B以及处理腔室110A、110B，一个或多个真空泵206可耦合至装载锁定腔室108A、108B及处理腔室110A、110B。为抽空装载锁定腔室108A、108B，真空泵206从耦合至两个装载锁定腔室106A、106B的抽空线210抽出真空。为抽空处理腔室110A、110B，抽空线212、214、216、218、220、222、224、226耦合至处理腔室110A、110B。将在下文参考图7进一步论述装载锁定腔室108A、108B及处理腔室110A、110B的抽空。
图3为系统100的侧视图。在操作期间，处理腔室110A、110B的温度可升高，且因此经受热膨胀。类似地，具有升高温度的基板可从处理腔室110A、110B进入装载锁定腔室108A、108B，这可使装载锁定腔室108A、108B经历热膨胀。为补偿装载锁定腔室108A、108B的热膨胀，装载锁定腔室108A、108B可具有端302，端302邻近于处理腔室110A、110B固定但允许装载锁定腔室108A、108B的剩余物以及邻近的基板装载站106A、106B在由箭头“A”所示的方向上移动。类似地，处理腔室110A、110B可具有端304，端304邻近于装载锁定腔室108A、108B固定，而处理腔室110A、110B的另一端以及基板载体维护站204A、204B可由于热膨胀在由箭头“B”所示的方向上移动。当处理腔室110A、110B因热膨胀而膨胀时，基板载体维护站204A、204B也移动以允许处理腔室110A、110B膨胀。若当处理腔室110A、110B膨胀时基板载体维护站204A、204B未移动，则在炎热的夏日处理线114A、114B可非常类似铁路轨道地弯曲。类似地，当装载锁定腔室108A、108B膨胀时，基板装载站106A、106B也移动以允许装载锁定腔室108A、108B膨胀。
图4为图示允许处理腔室110B因热膨胀而移动的装备的处理腔室110B的近视图。应理解，尽管参考处理腔室110B进行描述，但所述描述将同样地适用于装载锁定腔室108B。将处理腔室110B安置于框架402上。处理腔室110B的端304具有固定点404及可沿安置于框架402上的一块低摩擦材料408移动的底座部分406。可用于低摩擦材料408的合适材料包括聚四氟乙烯。将理解，还预期其它低摩擦材料。将理解，两个基板载体维护站204A、204B以及基板装载站106A、106B将具有安置于框架上的底座部分，所述框架具有低摩擦材料以允许基板载体维护站204A、204B以及基板装载站106A、106B移动。
图5为图示抽空系统的处理系统100的后视图。图6A及6B为图示用于将真空系统连接至处理腔室110B的抽空位置的处理腔室110B的俯视图及部分侧视图。抽空线212、214、216、218、220、222、224、226各自具有随后耦合至分离器导管504A-504D  的垂直导管502A-502D。每一个分离器导管504A-504D具有耦合至处理腔室110A、110B的两个连接点506A-506H。因此，对每一个处理腔室110A、110B的每一侧而言存在四个连接点。
图6A示出用于处理腔室110B的连接点602A-602D。处理腔室110B图示为具有两个基板载体604A、604B，在所述基板载体604A、604B上各自具有基板606A、606B。等离子体发生器608与气体引入导管610一样位于中心。等离子体发生器608为针对CVD在处理腔室110A、110B内产生等离子体的微波源。电源614为等离子体发生器608供电。如图6B所示，连接点602A、602I安置于腔室盖612的角落附近。因为连接点602A-602D安置于处理腔室110B的角落附近，所以可在腔室110B的所有区域中大体上均匀地抽空处理腔室110B。若仅使用一个抽空点，则与更远的位置相比在抽空点附近可存在更大的真空。预期，可能存在其它抽空连接，包括额外连接。
图7为根据一个实施例的抽空系统700的图解说明。每一个处理腔室110A、110B可具有若干个真空泵702A-702H，而非单个真空泵。每一个垂直线502A-502H在耦合至连接点602A-602P之前分裂成分离器导管504A-504H。节流阀704可定位于连接点602A-602P与分离器导管504A-504H之间，以控制各个处理腔室110A、110B的真空度。将理解，抽空系统700适用于具有较少真空泵的系统。若耦合至处理腔室的真空泵中的一个不工作，则耦合至处理腔室的其它真空泵可能补偿不工作的泵，以使处理腔室可维持预定的真空度。
装载锁定腔室108A、108B可由耦合至装载锁定腔室108A、108B的连接点708A、708B的公共真空泵706抽空。双向阀710可存在于真空泵706与连接点708A、708B之间，以控制装载锁定腔室108A、108B的真空度。
图8为与处理腔室110B间隔开的腔室盖612的侧面透视图。为维护处理腔室110B，盖612可如箭头“C”所示通过在点802A、802B处使垂直导管502A、502E与抽空线224、226断开连接而加以移动。因此，在不必拆卸整个抽空系统700或移动大量、重型系统组件的情况下，可移动盖612。可通过使用诸如起重机或液压升降机之类的移动装置使盖612滑动离开处理腔室110B来移动盖612。
图9图示机器人104A、104B从基板堆栈模块102A、102B移除基板906将基板906置放于基板装载站环境902A-902D中的顺序。基板装载站106A、106B图示为具有两个分离环境902A-902D。在每一个环境中，基板载体904面向不同的方向。因此，当基板906安置于基板装载站环境902A-902D内时，基板906由每一个分离基板装载站106A、106B内的载体904间隔开。
机器人104A从基板堆栈模块102A取回基板906且沿轨道202移动以将基板906置放于环境902B或902D中。当机器人104A将基板906置放于环境902B、902D中时，基板906置放于载体904上，以使得基板906面向离开载体904的箭头“E”的方向。类似地，机器人104B从基板堆栈模块102B取回基板906且沿轨道202移动以将基板906置放于环境902A或环境902C中。当机器人104B将基板906置放于环境902A、902C中时，基板906置放于载体904上，以使得基板906面向离开载体904的箭头“D”的方向。因此，两个机器人104A、104B都可使用相同的基板装载站106A、106B且沿相同的轨道202移动。然而，每一个机器人104A、104B使用基板装载站106A、106B的分离环境902A-902D且仅可将基板906置放于面向特定方向的各个载体904上。
图10A－10C为根据一个实施例的双处理腔室110A、110B的示意图。双处理腔室110A、110B包括以线性配置安置于每一个处理腔室110A、110B的中心的多个微波天线1010。天线1010从处理腔室的顶部垂直延伸至处理腔室的底部。每一个微波天线1010在耦合至微波天线1010的处理腔室的顶部与底部都具有相应的微波功率头1012。如图10B中所示，微波功率头1012为交错的。所述交错可归因于空间限制。可经由每一个功率头1012将功率独立地施加于天线1010的每一端。微波天线1010可在300MHz及300GHz的范围内的频率下操作。
处理腔室的每一个经配置以能够处理两个基板，在微波天线1010的每一侧上有一个基板。基板通过压板1008及遮蔽框架1004保持在处理腔室中的适当位置。气体引入管1014安置于邻近的微波天线1010之间。气体引入管1014从平行于微波天线1010的处理腔室的底部垂直延伸至顶部。气体引入管1014允许引入诸如硅前驱物及氮前驱物的处理气体。尽管未图示于图10A－10C中，但可经由位于基板载体1008之后的泵送口来抽空处理腔室110A、110B。
图11A及11B为根据另一个实施例的处理腔室1100的示意图。处理腔室1100包括诸如微波天线之类的多个等离子体发生器，所述多个等离子体发生器在腔室主体内从第一端1108垂直延伸至第二端1118。处理腔室1100包括遮蔽框架1104，所述遮蔽框架1104位于等离子体发生器1102的每一侧上以用于处理基板。如图11B中所示，遮蔽框架1104安置于多个等离子体发生器1102的相对侧上，以便两个大面积的基板可在单个处理腔室1100内得以处理，且因此同时或连续地暴露于相同的处理环境。
每一个等离子体发生器1102在所述等离子体发生器1102的第一端1108处耦合至第一波导1110，且在所述等离子体发生器1102的第二端1118处耦合至第二波导1116。每一个第一波导1110耦合至第一电源1112，而每一个第二波导则耦合至第二电源1114。电源1112、1114可耦合至封壳1106内的波导1110、1116。如最佳在图11B中可见，封壳1106为交错的“T”形封壳。由于空间限制，交错的“T”形封壳可为必需的。在此配置中，邻近的波导1110、1116以相反、平行的方向从端1108、1118延伸至各个电源1112、1114。气体引入管也可以上文关于图10C所论述的方式安置于处理腔室1100内。
图12A及12B为根据另一个实施例的处理腔室1200的示意图。处理腔室1200包括诸如微波天线之类的多个等离子体发生器，所述多个等离子体发生器在腔室主体内从第一端1208垂直延伸至第二端1218。处理腔室1200包括遮蔽框架1204，所述遮蔽框架1204位于等离子体发生器1202的每一侧上以用于处理基板。如图12B中所示，遮蔽框架1204安置于多个等离子体发生器1202的相对侧上，以便两个大面积的基板可在单个处理腔室1200内得以处理，且因此同时或连续地暴露于相同的处理环境。
每一个等离子体发生器1202在所述等离子体发生器1202的第一端1208处耦合至第一波导1210，且在所述等离子体发生器1202的第二端1218处耦合至第二波导1216。每一个第一波导1210耦合至第一电源1212，而每一个第二波导耦合至第二电源1214。电源1212、1214可耦合至封壳1206内的波导1210、1216。如最佳在图12B中可见，封壳1206都从处理腔室1200的相同侧延伸。在此配置中，邻近的波导1210、1216以相同、平行的方向从端1208、1218延伸至各个电源1212、1214。气体引入管也可以上文关于图10C所论述的方式安置于处理腔室1200内。
图13A及13B为根据另一个实施例的处理腔室1300的示意图。处理腔室1300包括诸如微波天线之类的多个等离子体发生器，所述多个等离子体发生器在腔室主体内从第一端1308垂直延伸至第二端1318。处理腔室1300包括遮蔽框架1304，所述遮蔽框架1304位于等离子体发生器1302的每一侧上以用于处理基板。如图13B中所示，遮蔽框架1304安置于多个等离子体发生器1302的相对侧上，以便两个大面积的基板可在单个处理腔室1300内得以处理，且因此同时或连续地暴露于相同的处理环境。
每一个等离子体发生器1302在所述等离子体发生器1302的第一端1308处耦合至第一倾斜波导1310，且在所述等离子体发生器1302的第二端1318处耦合至第二倾斜波导1316。每一个第一倾斜波导1310耦合至第一电源1312，而每一个第二倾斜波导耦合至第二电源1314。封壳1306通过已从腔室侧面移除而图示于腔室1300的顶部及底部上，以便清楚地观察波导1310、1316。如最佳在图13B中可见，波导1310、1316沿处理腔室1300的顶部延伸，且沿处理腔室1300的侧面向下延伸至各个电源1312、1314。由于电源1312、1314相对于等离子体发生器1302的第一端1308及第二端1318的位置，波导1310、1316为倾斜的。气体引入管也可以上文关于图10C所论述的方式安置于处理腔室1300内。
通过使用垂直CVD系统，可同时处理多个基板。同时处理多个基板降低了制造成本，这可增加制造商的利润。
尽管上述内容针对本发明的实施例，但在不脱离本发明的基本范围的情况下，可设计本发明的其它及另外的实施例，且本发明的范围是由以下的权利要求书来决定的。

Claims (8)

1.一种设备，包括：
腔室主体；
多个微波天线，所述多个微波天线水平位于所述腔室主体内的中心且在所述腔室主体内垂直延伸，以使得在所述腔室主体内保留足够的空间用于在所述多个微波天线的相对侧上处理的一个或多个基板，每一个微波天线具有第一端和第二端，所述第一端邻近于所述腔室主体的底部，所述第二端邻近于所述腔室主体的顶部；
第一微波功率头，耦合至每一个微波天线的所述第一端；
第二微波功率头，耦合至每一个微波天线的所述第二端；
第一电源，耦合至每一个第一微波功率头，所述第一电源安置于所述腔室主体外；以及
第二电源，耦合至每一个第二微波功率头，所述第二电源安置于所述腔室主体外，所述第二电源以交错图案进行共同配置，以使得邻近的第二微波功率头沿相反方向从所述微波天线延伸至相应的第二电源。
2.一种设备，包括：
腔室主体；
多个微波天线，所述多个微波天线水平位于所述腔室主体内的中心且在所述腔室主体内垂直延伸，以使得在所述腔室主体内保留足够的空间用于在所述多个微波天线的相对侧上处理的一个或多个基板，每一个微波天线具有第一端和第二端，所述第一端邻近于所述腔室主体的底部，所述第二端邻近于所述腔室主体的顶部；
第一微波功率头，耦合至每一个微波天线的所述第一端；
第二微波功率头，耦合至每一个微波天线的所述第二端；
第一电源，耦合至每一个第一微波功率头，所述第一电源安置于所述腔室主体外；以及
第二电源，耦合至每一个第二微波功率头，所述第二电源安置于所述腔室主体外，所述第二电源以一图案进行共同配置，以使得邻近的第二微波功率头沿相同方向从所述微波天线延伸至相应的第二电源。
3.一种设备，包括：
腔室主体；
多个微波天线，所述多个微波天线水平位于所述腔室主体内的中心且在所述腔室主体内垂直延伸，以使得在所述腔室主体内保留足够的空间用于在所述多个微波天线的相对侧上处理的一个或多个基板，每一个微波天线具有第一端和第二端，所述第一端邻近于所述腔室主体的底部，所述第二端邻近于所述腔室主体的顶部；
第一倾斜微波功率头，耦合至每一个微波天线的所述第一端；
第二倾斜微波功率头，耦合至每一个微波天线的所述第二端；
第一电源，耦合至每一个第一微波功率头，所述第一电源安置于所述腔室主体外；以及
第二电源，耦合至每一个第二微波功率头，所述第二电源安置于所述腔室主体外，所述第二电源以交错图案进行共同配置，以使得每一个第二微波功率头沿所述腔室主体的侧面及沿所述腔室主体的顶壁向上延伸至每一个微波天线的所述第一端。
4.如权利要求1或权利要求2或权利要求3所述的设备，其特征在于进一步包括多个气体引入管，所述多个气体引入管安置于所述腔室主体内且邻近于所述多个微波天线。
5.如权利要求4所述的设备，其特征在于，所述腔室主体包括一个或多个盖，所述一个或多个盖可移除以使用所述多个微波天线，其中每一个盖具有延伸穿过所述盖的多个开口。
6.如权利要求5所述的设备，其特征在于进一步包括一个或多个真空泵，所述一个或多个真空泵与所述腔室主体耦合，以使得所述腔室主体可经由延伸穿过每一个盖的所述多个开口得以抽空。
7.如权利要求6所述的设备，其特征在于，所述腔室主体安置于框架上，且其中所述腔室主体具有第一端，所述第一端固定至所述框架。
8.如权利要求7所述的设备，其特征在于进一步包括安置在所述框架上的聚四氟乙烯元件，且其中所述腔室主体具有第二端，所述第二端安置于所述聚四氟乙烯元件上且可沿所述聚四氟乙烯元件移动。
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