TWI551718B - 豎立直線ｃｖｄ系統 - Google Patents

豎立直線ｃｖｄ系統 Download PDF

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TWI551718B
TWI551718B TW100115152A TW100115152A TWI551718B TW I551718 B TWI551718 B TW I551718B TW 100115152 A TW100115152 A TW 100115152A TW 100115152 A TW100115152 A TW 100115152A TW I551718 B TWI551718 B TW I551718B
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chamber body
chamber
coupled
processing
gas introduction
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TW201204865A (en
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栗田真一
庫德拉裘茲福
安瓦蘇華
懷特約翰Ｍ
任東吉
沃夫漢斯
瓦洛丹尼斯
稻川真
森育雄
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應用材料股份有限公司
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Description

豎立直線CVD系統
本發明之實施例大體而言係關於一種豎立化學氣相沈積(chemical vapor deposition;CVD)系統。
CVD為一種將化學前驅物引入處理腔室中、發生化學反應以形成預定化合物或材料，及將其沈積於處理腔室內之基板上的製程。存在若干個CVD製程。一個CVD製程為在腔室中點燃電漿以增強前驅物之間的反應的電漿增強化學氣相沈積(plasma enhanced chemical vapor deposition;PECVD)。可藉由使用感應耦合電漿源或電容耦合電漿源而完成PECVD。
CVD製程可用以處理大面積基板，諸如平板顯示器或太陽電池板。CVD可用以沈積多層，諸如用於電晶體之矽基薄膜。在此項技術中需要一種降低平板顯示器裝置之製造成本的方法及設備。
本發明大體而言係關於一種豎立CVD系統，其具有能夠處理多個基板之一處理腔室。儘管將該多個基板安置於該處理腔室內之處理源之相對側上，但未使處理環境彼此隔離。該處理源為一水平居中的豎立電漿產生器，其允許在該電漿產生器之任一側上同時但以彼此獨立之方式處理多個基板。將該系統配置為一雙系統，藉此將各自具有其自己的處理腔室之兩個相同處理線配置為彼此鄰近。多個機器人用以自處理系統裝載且卸載基板。每一機器人可使用該系統內之兩個處理線。
在一個實施例中，一種設備包括：一腔室主體；複數個電漿產生器；一第一波導，其耦合至每一電漿產生器之第一端；一第二波導，其耦合至每一電漿產生器之第二端；一第一功率源，其耦合至該第一波導，該第一功率源安置於該腔室主體外；以及一第二功率源，其耦合至該第二波導。該複數個電漿產生器水平居中於該腔室主體內且在該腔室主體內豎立延伸，以使得在該腔室主體內仍有足夠的間隔用於在該複數個電漿產生器之相對側上處理之一或多個基板。每一電漿產生器具有一第一端，其鄰近於該腔室主體之一底部；以及一第二端，其鄰近於該腔室主體之一頂部。第二功率源安置於該腔室主體外。第二功率源經共同配置為一交錯圖案，以使得鄰近第二波導沿相反方向自電漿產生器延伸至相應的第二功率源。
在另一實施例中，一種設備包括：一腔室主體；複數個電漿產生器；一第一波導，其耦合至每一電漿產生器之第一端；一第二波導，其耦合至每一電漿產生器之第二端；一第一功率源，其耦合至該第一波導，該第一功率源安置於該腔室主體外；以及一第二功率源，其耦合至該第二波導。該複數個電漿產生器水平居中於該腔室主體內且在該腔室主體內豎立延伸，以使得在該腔室主體內仍有足夠的間隔用於在該複數個電漿產生器之相對側上處理之一或多個基板。每一電漿產生器具有一第一端，其鄰近於該腔室主體之一底部；以及一第二端，其鄰近於該腔室主體之一頂部。第二功率源安置於該腔室主體外。第二功率源經共同配置為一圖案，以使得鄰近第二波導沿相同方向自電漿產生器延伸至相應的第二功率源。
在另一實施例中，一種設備包括：一腔室主體；複數個電漿產生器；一第一傾斜波導，其耦合至每一電漿產生器之第一端；一第二傾斜波導，其耦合至每一電漿產生器之第二端；一第一功率源，其耦合至該第一波導，該第一功率源安置於該腔室主體外；以及一第二功率源，其耦合至該第二波導。該複數個電漿產生器水平居中於該腔室主體內且在該腔室主體內豎立延伸，以使得在該腔室主體內仍有足夠的間隔用於在該複數個電漿產生器之相對側上處理之一或多個基板。每一電漿產生器具有一第一端，其鄰近於該腔室主體之一底部；以及一第二端，其鄰近於該腔室主體之一頂部。第二功率源安置於該腔室主體外。第二功率源經共同配置為一交錯圖案，以使得每一第二波導沿該腔室主體之一側面及沿該腔室主體之一頂壁向上延伸至每一電漿產生器之該第一端。
本發明大體而言係關於一種豎立CVD系統，其具有能夠處理多個基板之一處理腔室。儘管將該多個基板安置於該處理腔室內之處理源之相對側上，但未使處理環境彼此隔離。該處理源為一水平居中的豎立電漿產生器，其允許在該電漿產生器之任一側上同時但以彼此獨立之方式處理多個基板。將該系統配置為一雙系統，藉此將各自具有其自己的處理腔室之兩個相同處理線配置為彼此鄰近。多個機器人用以自處理系統裝載且卸載基板。每一機器人可使用該系統內之兩個處理線。
水平居中的豎立電漿產生器為具有豎立於處理腔室內之電漿源之電漿產生器。應理解，由於豎立，所以電漿源自接近或處於腔室底部之第一端延伸至接近或處於腔室頂部之第二端。應理解，由於水平居中，所以電漿源等間隔地介於處理腔室之兩個壁或端之間。
可在購自Applied Materials,Inc.(Santa Clara,California)之改進的AKT Aristo系統中使用豎立CVD腔室來實施本文所論述之實施例。應理解，亦可在其他系統(包括由其他製造商出售之彼等系統)中實施實施例。
第1圖為根據一個實施例之豎立、線性CVD系統100之示意圖。系統100可經定大小以在沈積2,000埃厚度之氮化矽薄膜時處理具有大於約90,000 mm2的表面積之基板，且能夠每小時處理大於90個基板。系統100較佳包括兩個分離處理線114A、114B，其由共用系統控制平臺112耦合在一起以形成雙處理線配置/佈局。共用電源供應器(諸如，交流電源供應器)、共用及/或共用泵送及排氣組件及共用氣體分配盤可用於雙處理線114A、114B。對每小時大於90個基板之系統總量而言，每一處理線114A、114B每小時可處理大於45個基板。亦預期，可使用單個處理線或大於兩個處理線來配置系統。
用於豎立基板處理之雙處理線114A、114B存在若干益處。因為腔室經豎立地配置，所以系統100之佔地面積大約與單個、習知水平處理線相同。因此，在大致相同的佔地面積內，存在兩個處理線114A、114B，此舉有益於製造商在晶圓廠中節省佔用面積。為幫助理解術語「豎立」之意義，考慮平板顯示器。諸如電腦監視器之平板顯示器具有長度、寬度及厚度。當平板顯示器為豎立時，長度或寬度自地平面垂直延伸而厚度平行於地平面。相反地，當平板顯示器為水平時，長度與寬度皆平行於地平面而厚度垂直於地平面。對大面積的基板而言，基板之長度及寬度比基板之厚度大許多倍。
每一處理線114A、114B包括基板堆疊模組102A、102B，自基板堆疊模組102A、102B取得新的基板(亦即，尚未在系統100內處理之基板)且儲存經處理基板。大氣機器人104A、104B自基板堆疊模組102A、102B取得基板且將基板置放於雙基板裝載站106A、106B中。應理解，儘管將基板堆疊模組102A、102B圖示為具有沿水平定向堆疊之基板，但安置於基板堆疊模組102A、102B中之基板可類似於基板在雙基板裝載站106A、106B中所固持的方式沿豎立定向維持。隨後，將新的基板移入雙基板負載鎖定室108A、108B中，且隨後移動至雙基板處理腔室1010A、1010B。隨後，目前處理之基板穿過雙基板負載鎖定室108A、108B中之一者而返回至雙基板裝載站106A、106B中之一者，其中該基板由大氣機器人104A、104B中之一者取得且返回至基板堆疊模組102A、102B中之一者。
第2圖為第1圖之實施例之平面圖。將同時就兩個處理線114A、114B來論述順序，即便基板僅沿一個路徑下降。每一機器人104A、104B可沿共用軌道202移動。如將在下文所論述，每一機器人104A、104B可使用兩個基板裝載站106A、106B。有時候，用以經由處理線114A、114B輸送基板之基板載體將需要維護以便修理、清潔或替換。因此，基板載體維護站204A、204B沿與負載鎖定室108A、108B相對之處理線114A、114B耦合至處理腔室110A、110B。
為抽空負載鎖定室108A、108B以及處理腔室110A、110B，一或多個真空泵206可耦合至負載鎖定室108A、108B及處理腔室110A、110B。為抽空負載鎖定室108A、108B，真空泵206自耦合至兩個負載鎖定室108A、108B之抽空線210抽出真空。為抽空處理腔室110A、110B，抽空線212、214、216、218、220、222、224、226耦合至處理腔室110A、110B。將在下文參閱第7圖進一步論述負載鎖定室108A、108B及處理腔室110A、110B之抽空。
第3圖為系統100之側視圖。在操作期間，處理腔室110A、110B之溫度可升高，且因此經受熱膨脹。類似地，具有高溫之基板可自處理腔室110A、110B進入負載鎖定室108A、108B，此舉可使負載鎖定室108A、108B經受熱膨脹。為補償負載鎖定室108A、108B之熱膨脹，負載鎖定室108A、108B可具有端302，端302鄰近於處理腔室110A、110B固定但允許負載鎖定室108A、108B之剩餘物以及鄰近基板裝載站106A、106B在由箭頭「A」所示之方向上移動。類似地，處理腔室110A、110B可具有端304，端304鄰近於負載鎖定室108A、108B固定，而處理腔室110A、110B之另一端以及基板載體維護站204A、204B可由於熱膨脹在由箭頭「B」所示之方向上移動。當處理腔室110A、110B因熱膨脹而膨脹時，基板載體維護站204A、204B亦移動以允許處理腔室110A、110B膨脹。若當處理腔室110A、110B膨脹時基板載體維護站204A、204B未移動，則在炎熱的夏日處理線114A、114B可非常類似鐵路軌道而彎曲。類似地，當負載鎖定室108A、108B膨脹時，基板裝載站106A、106B亦移動以允許負載鎖定室108A、108B膨脹。
第4圖為圖示允許處理腔室110B因熱膨脹而移動之裝備之處理腔室110B的近視圖。應理解，儘管就處理腔室110B進行描述，但該描述將同樣地適用於負載鎖定室108B。將處理腔室110B安置於框架402上。處理腔室110B之端304具有固定點404及可沿安置於框架402上之一塊低摩擦材料408移動之底座部分406。可用於低摩擦材料408之合適材料包括聚四氟乙烯。應理解，亦涵蓋其他低摩擦材料。應理解，兩個基板載體維護站204A、204B以及基板裝載站106A、106B將具有安置於框架上之底座部分，該框架具有低摩擦材料以允許基板載體維護站204A、204B以及基板裝載站106A、106B移動。
第5圖為圖示抽空系統之處理系統100之後視圖。第6A圖及第6B圖為圖示用於將真空系統連接至其之抽空位置之處理腔室110B之俯視圖及部分側視圖。抽空線212、214、216、218、220、222、224、226各自具有隨後耦合至分離器導管504A-504D之豎立導管502A-502D。每一分離器導管504A-504D具有耦合至處理腔室110A、110B之兩個連接點506A-506H。因此，對每一處理腔室110A、110B之每一側面而言存在四個連接點。
第6A圖圖示用於處理腔室110B之連接點602A-602D。處理腔室110B圖示為具有兩個基板載體604A、604B，在其上各自具有基板606A、606B。電漿產生器608與氣體引入導管610一樣位於中心。電漿產生器608為針對CVD在處理腔室110A、110B內產生電漿之微波源。功率源614為電漿產生器608供電。如第6B圖中所示，連接點602A、602I安置於腔室蓋612之轉角附近。因為連接點602A-602D安置於處理腔室110B之轉角附近，所以可在腔室110B之所有區域中大體上均勻地抽空處理腔室110B。若僅使用一個抽空點，則與更遠的位置相比在抽空點附近可存在更多真空。預期，可能存在其他抽空連接，包括額外連接。
第7圖為根據一個實施例之抽空系統700之圖解說明。每一處理腔室110A、110B可具有若干個真空泵702A-702H，而非單個真空泵。每一豎立線502A-502H在耦合至連接點602A-602P之前分成分離器導管504A-504H。節流閥704可定位於連接點602A-602P與分離器導管504A-504H之間以控制各別處理腔室110A、110B之真空度。應理解，抽空系統700適用於具有較少真空泵之系統。若耦合至處理腔室之真空泵中之一者不工作，則耦合至處理腔室之其他真空泵可能補償不工作的泵，以便處理腔室可維持預定的真空度。
負載鎖定室108A、108B可由耦合至負載鎖定室108A、108B之連接點708A、708B的共用真空泵706抽空。雙向閥710可存在於真空泵706與連接點708A、708B之間以控制負載鎖定室108A、108B之真空度。
第8圖為與處理腔室110B間隔之腔室蓋612之側面透視圖。為維護處理腔室110B，蓋612可如箭頭「C」所示藉由在點802A、802B處使豎立導管502A、502E與抽空線224、226分離而加以移動。因此，在不必拆卸整個抽空系統700或移動大量、重型系統元件之情況下，可移動蓋612。可藉由使用諸如起重機或液壓升降機之移動裝置使蓋612滑動離開處理腔室110B來移動蓋612。
第9圖圖示機器人104A、104B自基板堆疊模組102A、102B移除基板906且將基板906置放於基板裝載站環境902A-902D中之順序。基板裝載站106A、106B圖示為具有兩個分離環境902A-902D。在每一環境中，基板載體904面向不同的方向。因此，當基板906安置於基板裝載站環境902A-902D內時，基板906由每一分離基板裝載站106A、106B內之載體904間隔開。
機器人104A自基板堆疊模組102A取得基板906且沿軌道202移動以將基板906置放於環境902B或環境902D中。當機器人104A將基板906置放於環境902B、902D中時，基板906經置放於載體904上，以使得基板906面向離開載體904之箭頭「E」之方向。類似地，機器人104B自基板堆疊模組102B取得基板906且沿軌道202移動以將基板906置放於環境902A或環境902C中。當機器人104B將基板906置放於環境902A、902C中時，基板906經置放於載體904上，以使得基板906面向離開載體904之箭頭「D」之方向。因此，兩個機器人104A、104B皆可使用相同的基板裝載站106A、106B且沿相同的軌道202移動。然而，每一機器人104A、104B使用基板裝載站106A、106B之分離環境902A-902D且僅可將基板906置放於面向特定方向之個別載體904上。
第10A圖至第10C圖為根據一個實施例之雙處理腔室110A、110B之示意圖。雙處理腔室110A、110B包括以線性配置安置於每一處理腔室110A、110B之中心的複數個微波天線1010。天線1010自處理腔室之頂部豎立延伸至處理腔室之底部。每一微波天線1010在耦合至微波天線1010之處理腔室之頂部與底部皆具有相應的微波功率頭1012。如第10B圖中所示，微波功率頭1012為交錯的。交錯可歸因於間隔限制。可經由每一功率頭1012將功率獨立地施加於天線1010之每一端。微波天線1010可在300MHz至300GHz之範圍內的頻率下操作。
處理腔室之每一者經配置以能夠處理兩個基板，一個基板位於微波天線1010之每一側上。基板藉由平臺1008及遮蔽框架1004固持於處理腔室中之適當位置。氣體引入管1014安置於鄰近微波天線1010之間。氣體引入管1014自平行於微波天線1010之處理腔室之底部豎立延伸至頂部。氣體引入管1014允許引入諸如矽前驅物及氮前驅物之處理氣體。儘管處理腔室110A、110B未圖示於第10A圖至第10C圖中，但可經由位於基板載體1008之後的泵送口來抽空。
第11A圖及第11B圖為根據另一實施例之處理腔室1100之示意圖。處理腔室1100包括諸如微波天線之複數個電漿產生器，其在腔室主體內自第一端1108豎立延伸至第二端1118。處理腔室1100包括遮蔽框架1104，其位於電漿產生器1102之每一側上以用於處理基板。如第11B圖中所示，遮蔽框架1104安置於複數個電漿產生器1102之相對側上，以便兩個大面積的基板可在單個處理腔室1100內得以處理，且因此同時或連續地暴露於相同的處理環境。
每一電漿產生器1102在其第一端1108處耦合至第一波導1110，且在其第二端1118處耦合至第二波導1116。每一第一波導1110耦合至第一功率源1112，而每一第二波導耦合至第二功率源1114。功率源1112、1114可耦合至外殼1106內之波導1110、1116。如最佳在第11B圖中可見，外殼1106為交錯的「T」形外殼。由於間隔限制，交錯的「T」形外殼可為必需的。在此配置中，鄰近波導1110、1116以相反、平行方向自端1108、1118延伸至各別功率源1112、1114。氣體引入管亦可以上文關於第10C圖所論述之方式安置於處理腔室1100內。
第12A圖及第12B圖為根據另一實施例之處理腔室1200之示意圖。處理腔室1200包括諸如微波天線之複數個電漿產生器，其在腔室主體內自第一端1208豎立延伸至第二端1218。處理腔室1200包括遮蔽框架1204，其位於電漿產生器1202之每一側上以用於處理基板。如第12B圖中所示，遮蔽框架1204安置於複數個電漿產生器1202之相對側上，以便兩個大面積的基板可在單個處理腔室1200內得以處理，且因此同時或連續地暴露於相同的處理環境。
每一電漿產生器1202在其第一端1208處耦合至第一波導1210，且在其第二端1218處耦合至第二波導1216。每一第一波導1210耦合至第一功率源1212，而每一第二波導耦合至第二功率源1214。功率源1212、1214可耦合至外殼1206內之波導1210、1216。如最佳在第12B圖中可見，外殼1206皆自處理腔室1200之相同側延伸。在此配置中，鄰近波導1210、1216以相同、平行方向自端1208、1218延伸至各別功率源1212、1214。氣體引入管亦可以上文關於第10C圖所論述之方式安置於處理腔室1200內。
第13A圖及第13B圖為根據另一實施例之處理腔室1300之示意圖。處理腔室1300包括諸如微波天線之複數個電漿產生器，其在腔室主體內自第一端1308豎立延伸至第二端1318。處理腔室1300包括遮蔽框架1304，其位於電漿產生器1302之每一側上以用於處理基板。如第13B圖中所示，遮蔽框架1304安置於複數個電漿產生器1302之相對側上，以便兩個大面積的基板可在單個處理腔室1300內得以處理，且因此同時或連續地暴露於相同的處理環境。
每一電漿產生器1302在其第一端1308處耦合至第一傾斜波導1310，且在其第二端1318處耦合至第二傾斜波導1316。每一第一傾斜波導1310耦合至第一功率源1312，而每一第二傾斜波導耦合至第二功率源1314。外殼1306藉由已自腔室側面加以移除而圖示於腔室1300之頂部及底部上，以便清楚地觀察波導1310、1316。如最佳在第13B圖中可見，波導1310、1316沿處理腔室1300之頂部延伸，且沿處理腔室1300之側面向下延伸至各別功率源1312、1314。歸因於功率源1312、1314相對於電漿產生器1302之第一端1308及第二端1318的位置，波導1310、1316為傾斜的。氣體引入管亦可以上文關於第10C圖所論述之方式安置於處理腔室1300內。
藉由使用豎立CVD系統，可同時處理多個基板。同時處理多個基板降低了製造成本，從而可增加製造商的利潤。
儘管上述內容係針對本發明之實施例，但在不脫離本發明之基本範疇之情況下，可設計本發明之其他及另外實施例，且本發明之範疇係由以下申請專利範圍來決定。
100．．．系統
102A．．．基板堆疊模組
102B．．．基板堆疊模組
104A．．．機器人
104B．．．機器人
106A．．．基板裝載站
106B．．．基板裝載站
108A．．．負載鎖定室
108B．．．負載鎖定室
110A．．．處理腔室
110B．．．處理腔室
112．．．系統控制平臺
114A．．．處理線
114B．．．處理線
202．．．軌道
204A．．．基板載體維護站
204B．．．基板載體維護站
206．．．真空泵
210．．．抽空線
212．．．抽空線
214．．．抽空線
216．．．抽空線
218．．．抽空線
220．．．抽空線
222．．．抽空線
224．．．抽空線
226．．．抽空線
302．．．端
304．．．端
402．．．框架
404．．．固定點
406．．．底座部分
408．．．低摩擦材料
502A．．．豎立導管
502B．．．豎立導管
502C．．．豎立導管
502D．．．豎立導管
502E．．．豎立導管
502F．．．豎立導管
502G．．．豎立導管
502H．．．豎立導管
504A．．．分離器導管
504B．．．分離器導管
504C．．．分離器導管
504D．．．分離器導管
504E．．．分離器導管
504F．．．分離器導管
504G．．．分離器導管
504H．．．分離器導管
506A．．．連接點
506B．．．連接點
506C．．．連接點
506D．．．連接點
506E．．．連接點
506F．．．連接點
506G．．．連接點
506H．．．連接點
602A．．．連接點
602B．．．連接點
602C．．．連接點
602D．．．連接點
602E．．．連接點
602F．．．連接點
602G．．．連接點
602H．．．連接點
602I．．．連接點
602J．．．連接點
602K．．．連接點
602L．．．連接點
602M．．．連接點
602N．．．連接點
602O．．．連接點
602P．．．連接點
604A．．．基板載體
604B．．．基板載體
606A．．．基板
606B．．．基板
608．．．電漿產生器
610．．．氣體引入導管
612．．．腔室蓋
614．．．功率源
700．．．抽空系統
702A．．．真空泵
702B．．．真空泵
702C．．．真空泵
702D．．．真空泵
702E．．．真空泵
702F．．．真空泵
702G．．．真空泵
702H．．．真空泵
704．．．節流閥
706．．．真空泵
708A．．．連接點
708B．．．連接點
710．．．雙向閥
802A．．．點
802B．．．點
902A．．．環境
902B．．．環境
902C．．．環境
902D．．．環境
904．．．載體
906．．．基板
1004．．．遮蔽框架
1008．．．平臺
1010．．．微波天線
1010A．．．處理腔室
1010B．．．處理腔室
1012．．．微波功率頭
1014．．．氣體引入管
1100．．．處理腔室
1102．．．電漿產生器
1104．．．遮蔽框架
1106．．．外殼
1108．．．第一端
1110．．．第一波導
1112．．．第一功率源
1114．．．第二功率源
1116．．．第二波導
1118．．．第二端
1200．．．處理腔室
1202．．．電漿產生器
1204．．．遮蔽框架
1206．．．外殼
1208．．．第一端
1210．．．第一波導
1212．．．第一功率源
1214．．．第二功率源
1216．．．第二波導
1218．．．第二端
1300．．．處理腔室
1302．．．電漿產生器
1304．．．遮蔽框架
1306．．．外殼
1308．．．第一端
1310．．．第一傾斜波導
1312．．．第一功率源
1314．．．第二功率源
1316．．．第二傾斜波導
1318．．．第二端
A．．．箭頭
B．．．箭頭
C．．．箭頭
D．．．箭頭
E．．．箭頭
因此，可詳細理解本發明之上述特徵結構之方式，即上文簡要概述之本發明之更特定描述可參照實施例進行，其中一些實施例圖示於附加圖式中。然而，應注意，附加圖式僅圖示本發明之典型實施例，且因此不欲視為其範疇之限制，因為本發明可允許其他同等有效之實施例。
第1圖為根據一個實施例之處理系統之示意圖。
第2圖為第1圖之處理系統之示意俯視圖。
第3圖為第1圖之處理系統之示意側視圖。
第4圖為第1圖之處理腔室之近視圖。
第5圖為第1圖之處理系統之示意後視圖。
第6A圖為第1圖之處理腔室之示意橫截面圖。
第6B圖為第1圖之處理腔室之部分側視圖。
第7圖為用於第1圖之處理系統之抽空系統的圖解說明。
第8圖為第1圖之處理腔室之等角視圖。
第9圖為用於第1圖之處理系統之基板定序的俯視圖解說明。
第10A圖至第10C圖為第1圖之處理腔室之示意圖。
第11A圖及第11B圖為根據另一實施例之處理腔室之示意圖。
第12A圖及第12B圖為根據另一實施例之處理腔室之示意圖。
第13A圖及第13B圖為根據另一實施例之處理腔室之示意圖。
為促進理解，在可能情況下已使用相同元件符號來指定為圖式所共用的相同元件。預期可將一個實施例之元件及特徵結構有益地併入未進一步敍述之其他實施例中。
1100．．．處理腔室
1102．．．電漿產生器
1104．．．遮蔽框架
1106．．．外殼
1108．．．第一端
1110．．．第一波導

Claims (20)

  1. 一種豎立直線CVD系統之設備，其包含：一腔室主體，其包括一或多個可移除的蓋，每一蓋形成該腔室主體的一個別的側壁，且每一蓋包括複數個開口以供利用一或多個抽空線來抽空該腔室主體；複數個電漿產生器，其水平居中於該腔室主體內且在該腔室主體內豎立延伸，以使得在該腔室主體內仍有足夠的間隔用於在該複數個電漿產生器之相對側上處理之一或多個基板，每一電漿產生器具有鄰近於該腔室主體之一底部的一第一端與鄰近於該腔室主體之一頂部的一第二端；一第一波導，其耦合至每一電漿產生器之該第一端；一第二波導，其耦合至每一電漿產生器之該第二端；一第一功率源，其耦合至每一第一波導，該第一功率源安置於該腔室主體外；以及一第二功率源，其耦合至每一第二波導，該第二功率源安置於該腔室主體外，該等第二功率源經共同配置為一圖案，以使得鄰近第二波導沿一共同方向自該等電漿產生器延伸至相應的第二功率源；以及一或多個豎立導管，其耦合至該複數個開口，並經配置以當在移除該一或多個可移除的蓋時從該一或多個抽空線分離。
  2. 如請求項1所述之設備，其中該複數個電漿產生器為微波產生器。
  3. 如請求項2所述之設備，其進一步包含複數個氣體引入管，其安置於該腔室主體內且鄰近於該複數個微波產生器。
  4. 如請求項3所述之設備，其中該一或多個蓋可移除以使用位於該腔室主體之內的該複數個微波產生器。
  5. 如請求項4所述之設備，其進一步包含一或多個真空泵，其與該腔室主體耦合，以使得該腔室主體可經由延伸穿過每一蓋之該複數個開口得以抽空。
  6. 如請求項5所述之設備，其中該腔室主體安置於一框架上，且其中該腔室主體具有固定至該框架之一第一端。
  7. 如請求項6所述之設備，其進一步包含一聚四氟乙烯元件，其安置於該框架上，且其中該腔室主體具有一第二端，其安置於該聚四氟乙烯元件上且可沿該聚四氟乙烯元件移動。
  8. 如請求項1所述之設備，其中該腔室主體更包括一通口以輸送一基板進入該腔室主體，其中該通口係位於該腔 室主體的一側壁上，該側壁不同於包括該一或多個可移除的蓋的其中一者的一側壁。
  9. 一種豎立直線CVD系統之設備，其包含：一腔室主體，其包括一或多個可移除的蓋，每一蓋形成該腔室主體的一個別的側壁，且每一蓋包括複數個開口以供利用一或多個抽空線來抽空該腔室主體；複數個電漿產生器，其水平居中於該腔室主體內且在該腔室主體內豎立延伸，以使得在該腔室主體內仍有足夠的間隔用於在該複數個電漿產生器之相對側上處理之一或多個基板，每一電漿產生器具有鄰近於該腔室主體之一底部的一第一端與鄰近於該腔室主體之一頂部的一第二端；複數個氣體引入管，其設置於該腔室主體內，且在大致平行於該一或多個基板的一縱向表面的一方向上延伸；一第一波導，其耦合至每一電漿產生器之該第一端；一第二波導，其耦合至每一電漿產生器之該第二端；一第一功率源，其耦合至每一第一波導，該第一功率源安置於該腔室主體外；以及一或多個豎立導管，其耦合至該複數個開口，並經配置以當在移除該一或多個可移除的蓋時從該一或多個抽空線分離。
  10. 如請求項9所述之設備，其中該複數個氣體引入管垂直地延伸於該腔室主體內。
  11. 如請求項9所述之設備，其中該複數個氣體引入管鄰近於該複數個電漿產生器。
  12. 如請求項9所述之設備，其中每個氣體引入管的一水平位置係位於該等電漿產生器與該腔室主體內所剩餘的用來處理該一或多個基板的其中一者的間隔之間。
  13. 如請求項12所述之設備，其中該複數個氣體引入管係安置於該複數個電漿產生器的該等相對側上。
  14. 如請求項13所述之設備，其中該等相對側的每一者對應於一個別基板的一縱向表面，且其中在該等相對側的每一者上的氣體引入管係沿著該個別基板的該縱向表面的一方向而平均地間隔開。
  15. 一種豎立直線CVD系統之設備，其包含：一腔室主體，其包括一或多個可移除的蓋，每一蓋形成該腔室主體的一個別的側壁，且每一蓋包括複數個開口以供利用一或多個抽空線來抽空該腔室主體；複數個電漿產生器，其水平居中於該腔室主體內且在該腔室主體內豎立延伸，以使得在該腔室主體內仍有 足夠的間隔用於在該複數個電漿產生器之水平相對側的每一側上處理之一或多個基板，每一電漿產生器具有鄰近於該腔室主體之一底部的一第一端與鄰近於該腔室主體之一頂部的一第二端；複數個氣體引入管設置於該腔室主體內，且經配置以維護該等水平相對側的每一者；一第一波導，其耦合至每一電漿產生器之該第一端；一第二波導，其耦合至每一電漿產生器之該第二端；一第一功率源，其耦合至每一第一波導，該第一功率源安置於該腔室主體外；一第二功率源，其耦合至每一第二波導，該第二功率源安置於該腔室主體外，該等第二功率源經共同配置為一圖案，以使得鄰近第二波導沿相同方向自該等電漿產生器延伸至相應的第二功率源；以及一或多個豎立導管，其耦合至該複數個開口，並經配置以當在移除該一或多個可移除的蓋時從該一或多個抽空線分離。
  16. 如請求項15所述之設備，其中該複數個氣體引入管在大致平行於該一或多個基板的一縱向表面的一方向上延伸。
  17. 如請求項16所述之設備，其中該複數個氣體引入管垂直地延伸於該腔室主體內。
  18. 如請求項15所述之設備，其中該複數個氣體引入管鄰近於該複數個電漿產生器。
  19. 如請求項15所述之設備，其中每個氣體引入管的一水平位置係位於該等電漿產生器與該腔室主體內所剩餘的用來處理該一或多個基板的其中一者的間隔之間。
  20. 如請求項19所述之設備，其中該等水平相對側的每一者對應於一個別基板的一縱向表面，且其中在該等水平相對側的每一者上的氣體引入管係沿著該個別基板的該縱向表面的一方向而平均地間隔開。
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CN102859034A (zh) 2013-01-02
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WO2011137373A3 (en) 2012-02-09
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US20120031333A1 (en) 2012-02-09
US9922854B2 (en) 2018-03-20
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