CN110318041A - 基底处理方法 - Google Patents
基底处理方法 Download PDFInfo
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- CN110318041A CN110318041A CN201910250125.2A CN201910250125A CN110318041A CN 110318041 A CN110318041 A CN 110318041A CN 201910250125 A CN201910250125 A CN 201910250125A CN 110318041 A CN110318041 A CN 110318041A
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- gas
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- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
一种能够均匀地维持对基底上形成的薄膜下方的图案结构的损害的基底处理方法包含:将源材料供应到其上形成有与反应物发生反应的图案结构的基底;以及在等离子体气氛中通过供应单元的至少一个中心进气口供应反应物,其中,在反应物的供应期间,与反应物不同的阻挡材料通过与供应单元的中心进气口隔开的额外进气口供应,且基底的边缘处的阻挡材料的流量增加,从而增加基底的中心附近的反应物的自由基密度。
Description
相关申请的交叉参考
本申请要求2018年3月30日在韩国知识产权局申请的韩国专利申请第10-2018-0037762号的权益,所述申请的公开内容以全文引用的方式并入本文中。
技术领域
一个或多个实施例涉及一种基底处理方法,且更具体地说,涉及一种能够改善薄膜层的特征的基底处理方法。
背景技术
在基底上沉积及蚀刻薄膜的基底处理工艺中,为了在制造工艺中增加半导体装置的产量,使基底的每一部分的均匀性保持不变极为重要。具体来说,在等离子体工艺中由于活性自由基而出现对下层的损害。在一些情况下,损害程度根据基底的每一部分而变化。由于损害的不均匀性,因此薄膜和装置的特征可能变得在位置上不均匀。也就是说,在损害均匀性总体上较低时,制造工艺的产量管理会受到不利影响。
发明内容
一个或多个实施例包含一种在基底上沉积具有均匀特征的薄膜的方法,且更具体地说,一种控制基底上的每一部分处的等离子体的密度以在等离子体沉积工艺中均匀地控制基底上的每一部分处的薄膜的特征的方法。
额外方面将部分地在以下描述中得到阐述,并且部分地将从所述描述中显而易见,或者可通过对所呈现实施例的实践而习得。
根据一个或多个实施例,一种基底处理方法包含:将第一气体供应到其上形成有图案结构的基底;对第一气体进行吹扫;供应第二气体和第三气体以在等离子体气氛中在图案结构上形成薄膜,其中第二气体与第一气体发生反应;以及对第二气体进行吹扫,其中,在薄膜的形成期间,第二气体通过气体供应单元的至少一个中心进气口供应,且第三气体通过与气体供应单元的所述中心进气口隔开的额外进气口供应,且第三气体是与第一气体和第二气体不同的气体且其电离能比惰性气体的电离能大。
在第三气体通过额外进气口供应时,在基底的边缘处的第三气体的流量可能增加,且因此基底的中心附近的自由基密度可能增加。
第三气体可包含氮成分。
第三气体可包含一氧化二氮气体和氮气中的至少一种。
第二气体可包含氧成分,且第三气体包括氮成分,且薄膜可为在约100℃或者小于100℃的基底温度下形成的氧化膜。
第二气体可为氧气,且第三气体可为一氧化二氮气体,且氧气与一氧化二氮气体的流量比可为1:0.625到1:1.25。
第二气体可为氧气,且第三气体可为氮气,且氧气与氮气的流量比可为1:0.625到1:1.25。
在等离子体气氛中可出现对图案结构的损害。
对图案结构的损害可由通过额外进气口供应的第三气体改变。
图案结构可包含旋涂硬掩模(spin-on hardmask;SOH)。
所述基底处理方法可更包含使用在图案结构上形成的薄膜执行的双重图案化工艺或四重图案化工艺。
在等离子体气氛中,第二气体可经电离,且第三气体可未经电离。
第一气体在第一温度下可与第二气体反应,且第一气体在第一温度下可不与第三气体反应。
第三气体的电离能可比第一气体和第二气体的电离能大。
根据一个或多个实施例,一种基底处理方法包含:将含硅气体供应到其上形成有与氧气发生反应的图案结构的基底;对含硅气体进行吹扫;在约100℃或低于100℃的基底温度下在等离子体气氛中供应含氧气体和含氮气体,从而在图案结构上形成氧化硅膜;以及对含氧气体进行吹扫,其中,在氧化硅膜的形成期间,含氧气体通过气体供应单元的至少一个中心进气口供应,且含氮气体通过与气体供应单元的所述中心进气口隔开的额外进气口供应。
与氧自由基发生反应的图案结构可为旋涂硬掩模,含氧气体可为氧气,且含氮气体可为一氧化二氮气体,且在等离子体气氛中氧气与一氧化二氮气体的流量比可为1:0.625到1:1.25。
在氧化硅膜的形成期间,吸附在基底的图案结构上的含硅气体可与含氧气体反应且不与含氮气体反应。
含氮气体可通过额外进气口供应以增加基底的边缘处的流量,由于在基底的边缘处的含氮气体的流量增加,因此与基底的边缘处的图案结构发生反应的自由基的密度可减小,且由于在基底的边缘处的含氮气体的流量增加,因此与基底的中心处的图案结构发生反应的自由基的密度可增加,且因此,对基底的边缘处的图案结构的损害和对基底的中心附近的图案结构的损害可变得均匀。
根据一个或多个实施例,一种基底处理方法包含:将源材料供应到其上形成有与反应物发生反应的图案结构的基底;以及在等离子体气氛中通过供应单元的至少一个中心进气口供应反应物,其中,在反应物的供应期间,与反应物不同的阻挡材料通过与供应单元的所述中心进气口隔开的额外进气口供应,且基底的边缘处的阻挡材料的流量增加,从而增加基底的中心附近的反应物的自由基密度。
阻挡材料的电离能可比惰性气体的电离能大。
附图说明
根据结合附图进行的实施例的以下描述,这些和/或其它方面将变得显而易见并且更加容易了解,在所述附图中:
图1是根据本发明的实施例的基底处理方法的流程图。
图2是根据其它实施例的基底处理方法的流程图。
图3到图6是用于根据实施例的基底处理方法的气体供应单元和包含所述气体供应单元的基底处理装置的横截面视图。
图7是示出在氧化硅(SiO2)膜沉积于基底上的SOH膜上时由等离子体自由基所导致的对下部旋涂硬掩模(SOH)膜的损害程度的图。
图8是示出在27兆赫和600瓦的等离子体条件下在SiO2膜沉积于基底上的SOH结构上时基底的每一区域中的SOH损耗程度的图。
图9是示出根据另一实施例的在供应N2气体替代一氧化二氮(N2O)时基底上的SOH损耗均匀性的变化的图。
图10是示意性地示出根据其它实施例的基底处理装置的图。
附图标号说明
1:反应器;
2:反应器壁;
3、200:基座;
4:第一进气口;
5、6、7:第二进气口;
8:第二气体供应口;
9:背板;
10、125:气体通道;
11:喷淋头;
12、170:气流通道;
13、160:反应空间;
14:排气通道;
15:排气孔;
16、140:排气路径;
110:隔离壁;
120:气体供应单元;
127:气体供应板;
130:RF杆;
150:气体供应通道;
180:第一通孔;
185:第二通孔;
190:缓冲空间;
210:基座支架;
220:孔;
240:第一封盖;
250:第二封盖;
S10、S20、S23、S25、S50、S60、S70、S73、S75、S80:操作;
W:反应器侧壁。
具体实施方式
现在将对实施例进行详细参考,所述实施例的实例在附图中说明,其中在全文中相同的附图标记指代相同的元件。就此而言,本发明实施例可具有不同形式并且不应被解释为限于本文中所阐述的描述。因此,这些实施例仅通过参考附图在下文中描述以解释本说明书的各方面。如本文中所使用,术语“和/或”包含相关联的所列项中的一个或多个的任何和所有组合。诸如“中的至少一个”等表述当置在元件清单后时修饰整个元件清单而不是修饰清单的个别元件。
本文中所使用的术语是出于描述特定实施例的目的且并不旨在限制本公开。如本文中所使用,除非上下文另外清晰地指示,否则单数形式“一”和“所述”同样旨在包含复数形式。应进一步理解,本文中所使用的术语“包含(includes/including)”和/或“包括(comprises/comprising)”阐明存在所陈述的特征、整数、步骤、操作、部件、组件和/或其群组,但不排除存在或添加一个或多个其它特征、整数、步骤、操作、部件、组件和/或其群组。如本文中所使用,术语“和/或”包含相关联的所列项中的一个或多个的任何和所有组合。
应理解,尽管术语第一、第二等可在本文中使用以描述各个部件、组件、区域、层和/或区段,但这些部件、组件、区域、层和/或区段不应受这些术语限制。这些术语并不表示任何次序、数目或重要性,而是仅用于区分一个组件、区域、层和/或区段与另一组件、区域、层和/或区段。因此,在不脱离实施例的教导的情况下,下文论述的第一部件、组件、区域、层或区段可称为第二部件、组件、区域、层或区段。
在本公开中,“气体”可包含气化固体和/或液体,且可包含单种气体或气体混合物。在本公开中,通过气体供应单元引入到反应腔室中的处理气体可包含前体气体和添加气体。前体气体和添加气体通常可作为混合气体引入或可单独地引入到反应空间中。前体气体可与诸如惰性气体的运载气体一起引入。添加气体可包含诸如反应气体和惰性气体的稀释气体。反应气体和稀释气体可混合地或单独地引入到反应空间中。前体可包含两个或多于两个前体,且反应气体可包含两种或多于两种反应气体。前体可为化学吸附到基底上且通常含有构成介电膜基质主要结构的类金属或金属元素的气体,并且用于沉积的反应气体可为在气体被激发时与化学吸附到基底上的前体发生反应以将原子层或单层固定在基底上的气体。术语“化学吸附”可指代化学饱和吸附。除处理气体外的气体(也就是说,不穿过气体供应单元引入的气体)可用于密封反应空间,且其可包含诸如惰性气体的密封气体。在一些实施例中,术语“膜”可指代在与厚度方向垂直的方向上持续延伸以覆盖整个目标或相关表面而大体上不具有针孔的层或可指代仅覆盖目标或相关表面的层。在一些实施例中,术语“层”可指代结构,或膜的同义词,或具有形成于表面上的任何厚度的非膜结构。膜或层可包含具有一些特征的离散的单个膜或层或多个膜或层,并且相邻膜或层之间的边界可为透明的或不透明的,并且可基于物理、化学和/或一些其它特征、形成工艺或次序和/或相邻膜或层的功能或目的而设定。
在本公开中,应该将表述“相同材料”解释为意指主要成分(组分)相同。举例来说,当第一层和第二层均为氮化硅层且由相同材料形成时,第一层可从由Si2N、SiN、Si3N4以及Si2N3组成的族群中选出,且第二层也可选自以上族群,但其具体膜质量可与第一层的具体膜质量不同。
此外,在本公开中,根据可基于常规作业来判定可操作范围,任意两个变量均可构成变量的可操作范围,且任何指定范围可包含或不包含端点。此外,任何指定变量的值可指代精确值或近似值(不论是否将这些值表示为“约”),可包含等效值(equivalent),并且可指代平均值、中位值、代表值、多数值,或类似值。
在本公开未阐明条件和/或结构处中,鉴于本公开,本领域的普通技术人员可按照常规实验容易地提供这类条件和/或结构。在所有所描述的实施例中,在实施例中所使用的任何成分均可经其任何等效成分(包含本文中明确、必要或主要描述的这类成分)置换以便实现预期目的,此外,本公开同样可适用于装置和方法。
在下文中,将参考附图描述本公开的实施例。在附图中,可预期例如由制造技术和/或公差造成的所说明的形状的变化。因而,本公开的实施例不应解释为限于本文中所说明的区域的特定形状,而是可包含例如因制造工艺引起的形状偏差。
图1是根据本发明的实施例的基底处理方法的流程图。
参看图1,在操作S10中,将第一材料供应到其上形成有图案结构的基底。第一材料可为例如源材料,且可包含与稍后将供应的第二材料发生反应的材料。第一材料可为气体、液体或介于气体与液体之间的状态下的材料。可将第一材料供应到其上形成有图案结构的基底。因此,可将第一材料涂覆在图案结构的顶部表面和底部表面上以及连接所述顶部表面和底部表面的侧边上。
此后,在操作S20中,将第二材料供应到基底。在实施例中,第二材料可为反应物,且图案结构可包含与反应物发生反应的材料。在实施例中,图案结构可包含光阻。第二材料可为气体,且在替代实施例中可为液体,或可为介于气体与液体之间的状态下的材料。可在等离子体气氛中供应第二材料。第二材料还可以通过供应单元(例如,气体供应单元)至少在基底的中心附近供应。在操作S23中,根据实施例,可通过供应单元的中心进气口将第二材料供应到基底的中心。此外,可通过供应单元的另一进气口将第二材料供应到除基底的中心外的部分。
在操作S20中,在第二材料的供应期间,还可将除第二材料外的阻挡材料供应到基底。阻挡材料可用以防止反应物聚集在基底的边缘附近(且因此,基底上的图案结构的边缘受到较多损害)的现象。阻挡材料可包含与第一材料和第二材料不同的材料。
在实施例中,阻挡材料的电离能可比第一材料的电离能和第二材料的电离能大。在另一实施例中,阻挡材料的电离能可比惰性气体的电离能大。可通过供应具有这种高电离能的阻挡材料来抑制在基底上的图案结构的边缘附近生成自由基。因此,可防止对与自由基发生反应的图案结构的损害。
如上文所描述,阻挡材料为供应以阻挡反应物聚集在基底的边缘附近(因而自由基形成)的材料。为此,在操作S25中,在实施例中,阻挡材料可通过与供应单元的中心进气口隔开的额外进气口供应。额外进气口可位于供应单元的中心进气口与供应单元的边缘之间。阻挡材料可增加基底的边缘处的流量。因此,基底的边缘附近的反应物的自由基密度可相对减小。此外,对基底的中心附近的反应物的自由基密度的屏蔽效果可通过向基底的边缘供应阻挡材料而出现。因此,基底的中心附近的反应物的自由基密度可增加。
图2是根据其它实施例的基底处理方法的流程图。根据其它实施例的基底处理方法可为根据上述实施例的基底处理方法的变型。在下文中,本文将不再给出对实施例的重复描述。
参看图2,在操作S50中,将第一气体供应到其上形成有图案结构的基底。在实施例中,图案结构可包含与氧气发生反应的材料,且图案结构的一部分可通过反应而去除。在另一实施例中,图案结构可包含与除氧气外的材料(例如,氮气)发生反应的材料。在实施例中,图案结构可包含旋涂硬掩模(SOH)。
第一气体可为如上文所描述的源气体,且在将第一气体供应到反应空间时,可将第一气体吸附在基底上。此后,在操作S60中,对第一气体进行吹扫。第一气体可包含待形成于基底上的薄膜的成分。在实施例中,当要在基底上形成氧化硅膜时,第一气体可为含硅气体。
在对第一气体进行吹扫之后,在操作S70中,供应第二气体和第三气体。可在等离子体气氛中供应第二气体和第三气体。在工艺期间的基底温度可低于或等于100℃,且在更具体实例中,低于或等于50℃。等离子体的频率可为例如27兆赫,且等离子体的功率可为600瓦。然而,应注意,本公开不限于上述参数且可利用不同参数进行调整。
第二气体可为与第一气体发生反应的气体。另一方面,第三气体可为不与第一气体发生反应的气体。在供应第二气体时,吸附在基底上的第一气体与第二气体反应,从而使得可在图案结构上形成薄膜。由于吸附在基底上的第一气体不与第三气体反应,因此形成于图案结构上的薄膜可不包含第三气体的成分。
第三气体可为除第一气体和第二气体外的气体。为了防止薄膜含有第三气体的成分,可选择第三气体作为具有高电离能的材料。在实施例中,第三气体的电离能可比第一气体的电离能和/或第二气体的电离能大。在另一实施例中,第三气体的电离能可比惰性气体的电离能大。因此,在薄膜形成工艺期间,第二气体可在等离子体气氛中被电离,而第三气体可不被电离。
在实施例中,当第一气体为含硅气体且待形成的薄膜为氧化硅膜时,第二气体可为含氧气体且第三气体可为含氮气体。在实施例中,第三气体可包含一氧化二氮(N2O)气体和N2气体中的至少一种。
在这种情况下,在氧化硅膜的形成期间,吸附在基底的图案结构上的含硅气体可与含氧气体反应且不与含氮气体反应。这可能是因为含氮气体的电离能比含硅气体的电离能和含氧气体的电离能大。也就是说,在等离子体气氛中只有含氧气体被电离以与吸附在基底上的含硅气体反应以形成氧化硅膜,且可能不会形成氮化硅膜和/或氮氧化硅膜。
在实施例中,当第二气体为氧气且第三气体为N2O气体时,氧气与N2O气体的流量比可为1:0.625到1:1.25。在实施例中,当氧气的流量为160sccm时,N2O气体的流量可为100sccm到200sccm。在另一实例中,当第二气体为氧气且第三气体为N2气体时,氧气的流量与N2气体的流量比可为1:0.625到1:1.25。在实施例中,当氧气的流量为160sccm时,N2气体的流量可为100sccm到200sccm。然而,应注意,本公开不限于上述参数且可利用不同参数进行调整。
尽管已经基于用于形成氧化硅膜的工艺描述上述实施例,但应注意本公开不限于此。本公开可为用于形成任何氧化膜的工艺,在此情况下,第二气体可包含氧成分且第三气体可包含氮成分。在另一实施例中,本公开可包含用于形成任何氮化膜的工艺。
在另一实施例中,在等离子体气氛中的温度参数可以是针对第三气体的反应性的限制因素。举例来说,可将等离子体气氛设置成第一温度,其中,第一气体(即,吸附在图案结构上的第一气体)在第一温度下与第二气体反应,而第一气体在第一温度下可不与第三气体反应。第一温度可为例如100℃或低于100℃。
在实施例中,在100℃或低于100℃的温度下在等离子体气氛中供应的氧气可与吸附在基底的图案结构上的含硅气体反应以形成氧化硅膜。在100℃或低于100℃的温度下在等离子体气氛中供应的N2气体和/或N2O气体可不与吸附在基底的图案结构上的含硅气体反应。
在薄膜形成工艺期间,在操作S73中,第二气体可通过气体供应单元的至少一个中心进气口供应。另一方面,在操作S75中,第三气体可通过与气体供应单元的所述中心进气口隔开的额外进气口供应。在第三气体通过额外进气口供应时,基底的边缘处的流量增加,且因此基底的中心附近的反应物的自由基密度可增加。这可导致对基底的中心的损害增加。
更具体地,当在等离子体气氛中供应与图案结构发生反应的第二气体时,可在第二气体的自由基与图案结构反应时去除图案结构或使图案结构受损。对这种图案结构的损害可能受到供应第二气体的位置影响,而且还可能受供应不参与反应的第三气体的位置影响。具体来说,当第三气体通过额外进气口供应时,可抑制边缘处生成可与图案结构反应的自由基,且因此可减少对位于基底的边缘处的图案结构的损害。
举例来说,如果第一气体为含硅气体,第二气体为含氧气体且第三气体为含氮气体,那么含氧气体可至少通过中心进气口供应。含氮气体可通过与气体供应单元的中心进气口隔开的额外进气口供应。
在这种情况下,含氮气体可通过额外进气口供应以增加基底的边缘处的流量。由于基底的边缘处的流量增加,因此与图案结构发生反应的自由基于基底的边缘处的密度可减小。同时,由于基底的边缘处的流量增加,因此与图案结构发生反应的自由基于基底的中心附近的密度可增加。因此,对基底的边缘处的图案结构的损害减少,且对基底的中心附近的图案结构的损害可增加,且因此二者可以变得均匀。
在另一实施例中,含氧气体可通过额外进气口以及中心进气口供应。也就是说,为了控制对基底的中心附近的图案结构的损害和对基底的边缘附近的图案结构的损害的偏差,与图案结构发生反应的第二气体((例如,含氧气体)和/或不与图案结构发生反应的第三气体(例如,含氮气体))可通过额外进气口供应。
供应第二气体和第三气体以在图案结构上形成薄膜,且在操作S80中,对第二气体和第三气体进行吹扫。这完成用于在图案结构上形成薄膜的一个循环,且可将此循环重复预定次数。通过重复此循环,可增加形成于图案结构上的薄膜的厚度。
形成于图案结构上的薄膜可用于双重图案化工艺或四重图案化工艺。也就是说,在后续工艺中,去除图案结构,且形成于图案结构的侧壁上的薄膜充当掩模,从而使得基底可被图案化。
如以上实施例所描述,可在交换气体的工艺中间歇地执行吹扫气体的供应。举例来说,可在第一气体的供应操作与第二气体和第三气体的供应操作之间间歇地供应用于对第一气体进行吹扫的吹扫气体。在下一循环中还可以在第二气体和第三气体的供应操作与第一气体的供应操作之间供应用于对第二气体和第三气体进行吹扫的吹扫气体。
在另一实施例中,可在整个薄膜形成工艺中持续执行吹扫气体的供应。举例来说,可在所述工艺期间持续供应用于对第一气体进行吹扫的吹扫气体。在这种情况下,在从第一气体的供应操作到第二气体和第三气体的供应操作的预定时段内可通过不供应另一气体来执行第一气体的吹扫。在下一循环中在从第二气体和第三气体的供应操作到第一气体的供应操作的预定时段内可通过不供应另一气体来执行第二气体和第三气体的吹扫。
如同吹扫气体那样,还可以间歇地执行第三气体的供应。举例来说,在下一循环中可在第二气体的供应操作与第一气体的供应操作之间供应第三气体。而且,可持续地执行第三气体的供应。换句话说,可在整个薄膜形成工艺中持续地供应第三气体。
图3示出用于根据实施例的基底处理方法的气体供应单元和包含所述气体供应单元的基底处理装置。
参看图3,基底处理装置可包含隔离壁110、气体供应单元120、RF杆130以及排气路径140。尽管半导体或显示器基底的沉积装置在本文中描述为基底处理装置,但应理解,本公开不限于此。基底处理装置可为执行材料的沉积以形成薄膜所需的任何装置,且可指代其中均匀地供应用于对材料进行蚀刻或抛光的原材料的装置。在下文中,为描述方便起见,假定基底处理装置为半导体沉积装置。
隔离壁110可为反应器的组件。换句话说,用于基底的处理(例如,沉积、蚀刻、抛光)的反应空间可由隔离壁110形成。举例来说,隔离壁110可包含反应器的侧壁和/或上壁。隔离壁110中的反应器的上壁可提供气体供应通道150,源气体、吹扫气体和/或反应气体可通过所述气体供应通道供应。
气体供应单元120可连接到气体供应通道150。气体供应单元120可固定到反应器。举例来说,气体供应单元120可经由固定构件(未示出)固定到隔离壁110。气体供应单元120可经配置以将气体供应到反应空间160中的待处理的物体。举例来说,气体供应单元120可为喷淋头组合件。
与气体供应通道150连通的气流通道170可形成于气体供应单元120中。气流通道170可形成于气体供应单元120的气体通道125(上部部分)与气体供应单元120的气体供应板127(下部部分)之间。尽管气体通道125和气体供应板127在附图中示出为分开的结构,但气体通道125和气体供应板127可形成于一体化结构中。
气体通道125可提供连接到气体供应通道150的中心进气口。中心进气口可连接到气流通道170,从而使得气流通道170可通过中心进气口连接到气体供应通道150。
如上文所描述,气体供应通道150可形成于隔离壁110中。除气体供应通道150之外,第一通孔180可经形成为穿透隔离壁110的至少一部分。举例来说,第一通孔180可经形成为穿透隔离壁110中的反应器的上壁。在优选实施例中,第一通孔180的直径可比气体供应通道150的直径小。
第二通孔185可经形成为穿透气体供应单元120的至少一部分。举例来说,第二通孔185可经形成为通过气体通道125与气流通道170连接。因此,第一通孔180可通过第二通孔185与气流通道170连通。
第二通孔185可在气流通道170的中心与边缘之间。具体来说,第二通孔185可与气流通道170的边缘隔开。通过第二通孔185的位置结构,可将薄膜沉积控制在基底的具体部分处(也就是说,在对应于其中布置有第二通孔185的部分的部分处)。
在实施例中,通过第二通孔185供应的气体可影响对下部部分处的图案结构(例如,沉积于基底的中心与边缘之间的薄膜的下层,诸如旋涂硬掩模或SOH)的损害程度。当气体为具有高电离能的阻挡气体时,可减小对基底的中心与边缘之间的图案结构的损害程度。
喷淋头结构通常采用其中反应气体通过中心部分供应且通过边缘排出的结构。这种结构可产生对基底的边缘处的图案结构的损害和对基底的中心处的图案结构的损害变得不均等的问题。然而,根据本公开,可添加分开的气体供应路径,阻挡气体可通过所述分开的气体供应路径来在反应空间的中心部分与边缘之间供应。所供应的阻挡气体可引起限制在反应空间周围生成自由基的阻挡效果,从而可以减小对基底边缘附近形成的图案结构的损害。因此,对存在于基底的中心与边缘之间的图案结构的损害的偏差问题可以得到改善。
在另一实施例中,多个第二通孔185可沿以预定距离与中心进气口的中心隔开的外周形成。在另一替代实施例中,第二通孔185可沿以预定距离与中心进气口的中心隔开的外周持续布置。在这种情况下,气体通道125可包含由第二通孔185间隔开的多个组件。
第二通孔185可经形成为在相对于气体供应板127(或相对于气流通道170)垂直或倾斜的方向上穿透气体通道125。举例来说,第二通孔185可形成为相对于气体供应板127的延伸方向(也就是说,水平方向)以15°到45°的角度朝向气体供应板127的中心来穿透气体通道125。换句话说,通过调整第二通孔185穿透气体通道125的穿透角,可控制等离子体对在基底上且在薄膜下的图案结构的损害的均匀性。
在实施例中,第二通孔185可形成为相对于气体供应127的延伸方向(也就是说,水平方向)以30°的角度穿透气体通道125。在这种情况下,第二通孔185可沿在气体通道125的第一表面(例如,上部表面)上具有第一直径的第一外周布置或形成,或可沿在气体通道125的第二表面(例如,下部表面)上具有第二直径的第二外周布置或形成,其中第一直径和第二直径可彼此不同。
如此,可通过调整第二通孔185的数目、形状以及布置位置和供应到第二通孔185的气体的种类和流量来更精确地控制对图案结构的损害均匀性。因此,可沉积所需形状和质量的薄膜。
在另一实施例中,缓冲空间190可进一步形成于第一通孔180与第二通孔185之间。缓冲空间190可暂时容纳气体,使得可将通过第一通孔180供应的气体均匀地供应到第二通孔185。缓冲空间190的直径和宽度可比第一通孔180的直径和宽度大且还可比第二通孔185的直径和宽度大。此外,缓冲空间190可沿以预定距离与气体供应通道150的中心隔开的外周持续形成。
基底处理装置可进一步包含气体供应通道150、连接到气体供应通道150的第一气体供应单元(未示出)以及连接到第一通孔180的第二气体供应单元(未示出)。基底处理装置可进一步包含经配置以控制第一气体供应单元和第二气体供应单元的控制器(未示出)。在实施例中,控制器可进一步经配置以独立地控制第一气体供应单元和第二气体供应单元。在实施例中,第一气体供应单元可经配置以供应源气体和/或反应气体,且第二气体供应单元可经配置以供应阻挡气体。
基底处理装置可进一步包含RF杆130。RF杆130可通过隔离壁110的至少一部分连接到气体供应单元120。RF杆130可连接到外部等离子体供应单元(未示出)。尽管在附图中示出两个RF杆130,但本公开不限于此,且可安装至少一个或多个RF杆130以改善供应到反应空间160的等离子体功率的均匀性。
基底处理装置可进一步包含基座200,所述基座经配置以与隔离壁110的下部表面接触。基座200可由基座支架210支撑,且基座支架210可上下移动和转动。基座200可与隔离壁110间隔开或通过向上移动和向下移动基座支架210与隔离壁110接触,使得可打开或关闭反应空间160。
基底处理装置可进一步包含排气单元(未示出)。在反应空间160中,在与基底发生化学反应之后剩余的残余气体可由排气单元通过排气路径140排放到外部。
图4示意性地示出根据本公开的其它实施例的气体供应单元和包含所述气体供应单元的基底处理装置。根据实施例的气体供应单元和基底处理装置可为根据上述实施例的基底处理装置的变型。在下文中,本文将不再给出对实例实施例的重复描述。
参看图4,基底处理装置可包含隔离壁110、气体供应单元120以及基座200,所述气体供应单元大体上水平地布置在隔离壁110中,所述基座大体上与隔离壁110中的气体供应单元120相对布置。
设置于隔离壁110中且由真空泵连接的排气路径140可用于抽出隔离壁110中的反应空间160中的残余气体。
气体供应单元120可为喷淋头,且喷淋头的底座可包含经形成为喷射原料气体的多个孔220。喷淋头可通过气体供应通道150连接到原料气体供应罐。高频(RF)功率可电性连接到充当一个电极的喷淋头。
基座200由支架支撑且可充当另一电极。可将待处理的基底(诸如,半导体基底)装载在基座200的表面上,且待处理的基底可通过真空吸附或类似方式固定。
而且,如上文所描述,第二通孔185可经形成为穿透喷淋头的上部部分的至少一部分。因此,第一通孔180可通过第二通孔185与喷淋头的气流通道170连通。
图5示意性地示出根据本公开的其它实施例的气体供应单元和包含所述气体供应单元的基底处理装置。根据所述实施例的气体供应单元和基底处理装置可为根据上述实施例的基底处理装置的变型。在下文中,本文将不再给出对实例实施例的重复描述。
参看图5,包含隔离壁110的第一封盖240和第二封盖250可与基座200一起形成反应空间160。更详细地说,反应空间160的下部部分可由基座200形成,反应空间160的上部部分可由第一封盖240形成,且反应空间160的两侧可由第二封盖250形成。
当基底处理装置为沉积装置时,第一封盖240可包含喷淋头。第二封盖250可包含反应侧壁W和排气路径140。
基底处理装置的排气结构可配置有下游排气结构,其中下游排气结构可由第二封盖250实施。在这种情况下,可通过第一封盖240的喷淋头将用于沉积的气体注入待处理的基底中,且接着通过第二封盖250的排气路径140将其排放到下游。
另外,如上文所描述,第二通孔185可经形成为穿透气体供应单元125的上部部分的至少一部分。因此,第一通孔180可通过第二通孔185与喷淋头的气流通道170连通。
图6示意性地示出根据本公开的其它实施例的气体供应单元和包含所述气体供应单元的基底处理装置。根据所述实施例的气体供应单元和基底处理装置可为根据上述实施例的基底处理装置的变型。在下文中,本文将不再给出对实例实施例的重复描述。
如上文所描述,本公开公开一种控制沉积在基底上的薄膜的每一部分的特征的方法。根据本公开,在设置有用于将气体供应到基底的气体供应装置的反应器中,在基底上执行使用等离子体的薄膜沉积。更详细地说,气体供应装置为喷淋头,且使用等离子体的薄膜沉积可为等离子体原子层沉积(plasma atomic layer deposition;PEALD)、等离子体增强式化学气相沉积(plasma enhanced chemical vapor deposition;PECVD)、脉冲PECVD以及环状脉冲PECVD中的一种或这些方法的合适组合,或可为这些方法的合适变型。
参看图6,反应空间13由反应器1通过反应器壁2与基座3之间的表面接触而形成。通过位于反应器1的中心处的第一进气口4和位于反应器1周围的第二气体供应口8与第二进气口5、第二进气口6以及第二进气口7,以及位于其下的喷淋头11的孔(未示出)将气体供应到反应空间13。
供应到反应空间13的气体与装载在基座3上的基底(未示出)的表面反应,且其后通过排气通道14、排气孔15、排气路径16以及排气口排出。第二进气口5、第二进气口6以及第二进气口7可通过反应器壁2、背板9以及气体通道10连接到气流通道12。举例来说,贯通气体通道10的第二进气口7可相对于基底表面以不同角度形成。由此,可控制供应到基底上的具体部分的气体的流量,且可控制沉积于基底上的具体部分上的薄膜的特征。
贯通反应器壁的第二进气口5可穿透反应器的一个表面。可相对于反应器的中心环状地布置第二进气口6和第二进气口7,由此可将第二气体均匀地供应到基底的外围部分。
图7示出在SiO2膜在图6的反应器中通过PEALD方法沉积于基底上的SOH(一种类型的光致抗蚀剂)膜上时由等离子体自由基所导致的对下层SOH膜的损害程度。损害程度通过对所沉积的SiO2膜进行湿蚀刻来测量。
参看图7,在SiO2膜通过等离子体ALD方法沉积时,横轴表示在从具有300毫米的直径的基底的中心的两个方向上的位置,且纵轴表示下层SOH膜根据通过图6的第二气体供应路径供应的氧气或惰性气体(例如,氩气(Ar))的流量的损耗程度。在图6的反应器中,50sccm的氧气、250sccm的氧气、600sccm的Ar以及1000accm的Ar通过第二进气口供应,但不论气体类型和流量如何,整个基底上方的SOH膜损耗的形态和程度是类似的。
更详细地,参看图7,下层SOH膜的SOH损耗均匀性在整个基底上方并不均匀,且基底的边缘处的SOH膜损耗较大。这意味着在等离子体处理期间在整个反应空间中的等离子体自由基密度并不恒定,且基底的边缘处的自由基密度特别高。因此,在本公开中,公开一种通过控制基底的边缘处的自由基密度来在总体上增加SOH损耗均匀性的方法。
为了控制或降低基底的外围部分(基底的中心部分与基底的边缘之间的区域)中的自由基密度,在本公开中供应用于抑制自由基生成的气体。根据本公开的实施例,当使用等离子体在SOH膜上沉积SiO2膜时,含氮气体通过第二进气口供应。更详细地,当源气体、氧气反应气体以及Ar运载气体或吹扫气体通过第一进气口供应时,N2气体通过第二进气口供应。N2气体的电离能为1,503兆焦/摩尔(MJ/mol),Ar气体的电离能为1,520.6千焦/摩尔(KJ/mol),且氧气的电离能为493.4千焦/摩尔。N2气体的解离能比其它气体的解离能大得多。因此,与供应氩气或氧气的情况相比,在供应N2时,可抑制等离子体生成。除N2气体以外,电离能比Ar运载气体、吹扫气体或氧气反应气体的电离能大的气体可通过第二进气口供应。
如此,根据本公开,与基底的中心部分相比,可通过抑制在对应于第二进气口的基底的外围部分中生成自由基来防止外围部分中的SOH损耗,且可以在总体上实现更均匀的SOH损耗均匀性。
图8是示出在27兆赫和600瓦的等离子体条件下在SiO2膜沉积于基底上的SOH结构上时基底的每一区域中的SOH损耗程度的图。基底具有300毫米的直径,且在横轴的中心(也就是说,基底的中心)的两侧上距离为150毫米的每一位置处测量SOH损耗。纵轴表示以埃为单位测量的SOH损耗程度。
参看图8,当供应氧气和Ar气体且根据通过第二进气口供应到基底的外围部分的含氮气体(例如,N2O)的量来测量SOH损耗时,基底的外围部分处的SOH损耗随着含氮流量增加而减少。也就是说,当仅供应氧气和Ar气体时,基底上的SOH损耗均匀性欠佳。然而,当增加含氮气体的比率替代Ar时,抑制在基底的外围部分处生成等离子体,因而可减小自由基对SOH层的损害。因此,可以看出SOH损耗均匀性总体上可得到控制并逐步改善。另外,参看图8,在N2O气体的供应量增加时,基底的边缘处的SOH损耗减少,但中心处的SOH损耗却增加。可以理解,在供应到基底的外围部分的N2O气体包围供应到中心部分的氧气时,中心部分中的氧自由基密度相对增大且SOH损耗增加。因此,这表明,可以通过适当地控制供应到基底的外围部分的含氮气体的流量比来控制基底的中心处的自由基密度,且可适当地控制SOH损耗均匀性或下层变形均匀性。
图9是示出在供应N2气体替代N2O时基底上的SOH损耗均匀性的变化的图。参看图9,可以看出,可在通过第一进气口和第二进气口将N2气体供应到反应空间的外围部分时根据边缘N2气体EN的流量来控制SOH损耗均匀性。
图10是示意性地示出根据其它实施例的基底处理装置的图。根据其它实施例的基底处理方法可以是根据上述实施例的基底处理方法的变型。在下文中,本文将不再给出对实例实施例的重复描述。
参看图10,通过在反应空间的中心处的第一进气口将Si源气体、氧气以及Ar气体供应到反应空间,且通过在反应空间附近的第二进气口将N2或N2O供应到反应空间的外围部分。如图10所示出,氧气可通过第一进气口以脉冲形式供应,或可持续供应。根据本公开,当比较在基底的中心和边缘处的N2气体的比率和自由基生成程度时,在基底的外围部分中的N2气体的比率相对较高,且自由基生成程度相对较小。因此,可减少外围部分处的SOH损耗且可改善整体SOH损耗均匀性(见图8和图9)。
如此,根据本公开,在等离子体沉积工艺中,通过将电离能比反应气体和运载气体的电离能大的气体供应到基底的中心与边缘之间的外围部分,相对于在中心和边缘中生成自由基而抑制在外围部分中生成自由基,且可通过控制外围部分处的下层损耗来改善整个基底的下层损耗均匀性。
用于清晰地理解本公开的附图的每一部分的形状应在描述意义上考虑,但可被修改成除所示出的形状外的各种形状。
应理解,本文中所描述的实施例应仅在描述性意义上考虑,而非出于限制的目的。每一个实施例内的特征或方面的描述通常应被认为是可用于其它实施例中的其它类似特征或方面。
尽管已参考附图描述一个或多个实施例,但本领域的普通技术人员应了解,可在不脱离由随附权利要求所定义的本公开的精神和范围的情况下在本文中对形式和细节进行各种改变。
Claims (20)
1.一种基底处理方法,包括:
将第一气体供应到其上形成有图案结构的基底;
对所述第一气体进行吹扫;
供应第二气体及第三气体以在等离子体气氛中在所述图案结构上形成薄膜,其中所述第二气体与所述第一气体发生反应;以及
对所述第二气体进行吹扫,
其中,在所述薄膜的形成期间,所述第二气体通过气体供应单元的至少一个中心进气口供应,且所述第三气体通过与所述气体供应单元的所述中心进气口隔开的额外进气口供应,以及
所述第三气体是与所述第一气体及所述第二气体不同的气体,且其电离能比惰性气体的电离能大。
2.根据权利要求1所述的基底处理方法,其中,在所述第三气体通过所述额外进气口供应时,在所述基底的边缘处的所述第三气体的流量增加,且因此在所述基底的中心附近的自由基密度增加。
3.根据权利要求2所述的基底处理方法,其中所述第三气体包括氮成分。
4.根据权利要求3所述的基底处理方法,其中所述第三气体包括一氧化二氮气体及氮气中的至少一种。
5.根据权利要求1所述的基底处理方法,其中所述第二气体包括氧成分,且所述第三气体包括氮成分,以及
所述薄膜是在100℃或低于100℃的温度下形成的氧化膜。
6.根据权利要求5所述的基底处理方法,其中所述第二气体为氧气,且所述第三气体为一氧化二氮气体,以及
所述氧气与所述一氧化二氮气体的流量比为1:0.625到1:1.25。
7.根据权利要求5所述的基底处理方法,其中所述第二气体为氧气,且所述第三气体为氮气,以及
所述氧气与所述氮气的流量比是1:0.625到1:1.25。
8.根据权利要求1所述的基底处理方法,其中在所述等离子体气氛中出现对所述图案结构的损害。
9.根据权利要求8所述的基底处理方法,其中对所述图案结构的所述损害由通过所述额外进气口供应的所述第三气体改变。
10.根据权利要求8所述的基底处理方法,其中所述图案结构包括旋涂硬掩模。
11.根据权利要求1所述的基底处理方法,更包括使用在所述图案结构上形成的所述薄膜执行的双重图案化工艺或四重图案化工艺。
12.根据权利要求1所述的基底处理方法,其中,在所述等离子体气氛中,所述第二气体经电离,且所述第三气体未经电离。
13.根据权利要求1所述的基底处理方法,其中所述第一气体在第一温度下与所述第二气体反应,以及
所述第一气体在所述第一温度下不与所述第三气体反应。
14.根据权利要求1所述的基底处理方法,其中所述第三气体的电离能比所述第一气体及所述第二气体的电离能大。
15.一种基底处理方法,包括:
将含硅气体供应到其上形成有与氧气发生反应的图案结构的基底;
对所述含硅气体进行吹扫;
在100℃或低于100℃的温度下在等离子体气氛中供应含氧气体及含氮气体,且在所述图案结构上形成氧化硅膜;以及
对所述含氧气体进行吹扫,
其中,在所述氧化硅膜的形成期间,所述含氧气体通过气体供应单元的至少一个中心进气口供应,且所述含氮气体通过与所述气体供应单元的所述中心进气口隔开的额外进气口供应。
16.根据权利要求15所述的基底处理方法,其中与氧气发生反应的所述图案结构为旋涂硬掩模,
所述含氧气体为氧气,且所述含氮气体为一氧化二氮气体,以及
在所述等离子体气氛中所述氧气与所述一氧化二氮气体的流量比为1:0.625到1:1.25。
17.根据权利要求15所述的基底处理方法,其中,在所述氧化硅膜的形成期间,吸附在所述基底的所述图案结构上的所述含硅气体与所述含氧气体反应,且不与所述含氮气体反应。
18.根据权利要求15所述的基底处理方法,其中所述含氮气体通过所述额外进气口供应以增加所述基底的边缘处的流量,
由于在所述基底的所述边缘处的含氮气体的流量增加,因此在所述基底的所述边缘处与所述图案结构发生反应的自由基的密度减小,
由于在所述基底的所述边缘处的含氮气体的流量增加,因此在所述基底的中心处与所述图案结构发生反应的自由基的密度增加,以及
在所述基底的所述边缘处对所述图案结构的损害及在所述基底的所述中心附近对所述图案结构的损害变得均匀。
19.一种基底处理方法,包括:
将源材料供应到其上形成有与反应物发生反应的图案结构的基底;以及
在等离子体气氛中通过供应单元的至少一个中心进气口供应所述反应物,
其中,在所述反应物的供应期间,与所述反应物不同的阻挡材料通过与所述供应单元的所述中心进气口隔开的额外进气口供应,以及
所述基底的边缘处的所述阻挡材料的流量增加,从而增加所述基底的中心附近的所述反应物的自由基密度。
20.根据权利要求19所述的基底处理方法,其中所述阻挡材料的电离能比惰性气体的电离能大。
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SG10201901224SA (en) | 2019-10-30 |
TWI736840B (zh) | 2021-08-21 |
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JP2019186541A (ja) | 2019-10-24 |
US20190304776A1 (en) | 2019-10-03 |
US10867786B2 (en) | 2020-12-15 |
JP6782320B2 (ja) | 2020-11-11 |
KR102501472B1 (ko) | 2023-02-20 |
TW201942947A (zh) | 2019-11-01 |
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