CN105190847A - 具有适于保护抵抗氟等离子体的保护涂层的腔室部件 - Google Patents

具有适于保护抵抗氟等离子体的保护涂层的腔室部件 Download PDF

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CN105190847A
CN105190847A CN201480013077.0A CN201480013077A CN105190847A CN 105190847 A CN105190847 A CN 105190847A CN 201480013077 A CN201480013077 A CN 201480013077A CN 105190847 A CN105190847 A CN 105190847A
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松·T·阮
迈克尔·方
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Abstract

本文所述的实施方式关于一种保护涂层，所述保护涂层保护腐蚀环境内的下伏腔室部件免于受到腐蚀或劣化。所述腔室部件具有包含陶瓷材料的表面。设置在所述表面的涂层包含氧化镁、氧化镧或氟化镧。

Description

具有适于保护抵抗氟等离子体的保护涂层的腔室部件
发明背景
技术领域
本文所述的实施方式关于一种保护涂层，所述保护涂层保护腐蚀环境内的下伏(underlying)腔室部件(即，涂层被沉积在其上的对象)或部件部分免受腐蚀或劣化。
先前技术
在半导体腔室部件处理系统中，处理腔室的内部经常暴露于各种腐蚀性或反应性环境。这些反应性环境可由稳定的腐蚀性气体(诸如，Cl2)或其他反应性物种(包括由工艺反应产生的自由基或副产物)引起。在等离子体处理应用(诸如，蚀刻或化学气相沉积(CVD))中，通过其他分子的分解也产生反应性物种，所述分子本身可具有或可不具有腐蚀性或反应性。需要保护性及抗腐蚀措施来确保处理腔室或腔室内的部件的工艺性能及耐久性。
降低对腔室或腔室内的部件的腐蚀也减少腔室内的不希望有的颗粒的存在。例如，通常在处理腔室中使用镀镍部件来防止受到Cl2腐蚀。含氟气体(诸如，NF3或CHF3等)产生高度反应性的原子氟(F)。高温CVD工艺经常使用AlN加热器，所述AlN加热器易受来自诸如氟基清洁气体的元素的侵蚀。例如，由AlN制成的陶瓷加热器受NF3侵蚀，NF3经常在某些腔室部件处理系统中用作清洁气体。AlN加热器通常价格昂贵，且希望增加加热器表面的使用寿命以及减少腔室中的不希望有的颗粒的存在。
因此，在本领域中存在对于具有提高的对元素(诸如氟)抗性的半导体处理部件(诸如陶瓷加热器)的需求。
发明内容
本文所述的实施方式通常关于用于半导体腔室部件的保护涂层。更具体地，本文所述的实施方式关于一种适用于提高对氟等离子体抗性的氮化铝(AlN)加热器保护涂层。
在一个实施方式中，提供一种用于半导体处理腔室中的腔室部件。所述腔室部件具有由氮化铝组成的表面。所述表面具有涂层，且所述涂层包含氟化镁或氟化镧。
在另一实施方式中，提供一种在用于半导体处理腔室中的腔室部件上形成涂层的方法。所述方法包括以下步骤：在腔室部件的表面上沉积涂层。所述涂层包含氧化镁、氧化镧或氟化镧中的至少一种。所述涂层可视情况暴露于含氟等离子体。
附图说明
通过参考实施方式(一些实施方式在附图中说明)，可获得在上文中简要总结的本发明的更具体的说明，而能详细了解上述的本发明的特征。然而应注意，附图仅说明本发明的典型实施方式，因而不应将这些附图视为限制本发明的范围，因为本发明可容许其它等效实施方式。
图1A表示暴露于通常为腐蚀性或反应性环境的已知处理腔室的部分横截面视图；
图1B表示暴露于腐蚀性环境的具有保护涂层的处理腔室部件的部分横截面视图；
图2表示具有处理腔室部件的本发明的某些实施方式，所述处理腔室部件具有设置在等离子体处理腔室中的保护涂层；及
图3表示用于在腔室部件上形成保护涂层的方法步骤。
为了助于理解，已尽可能使用相同的元件符号指定各图共有的相同元件。应考虑一个实施方式的元件与特征可有利地并入其它实施方式而无需进一步说明。
实施方式
本文所述的实施方式关于一种在腐蚀环境中保护下伏腔室部件(即，涂层被沉积在其上的对象)或部件部分免受腐蚀或劣化的保护涂层。
图1A-B示意性地图示在腔室部件上的涂层的保护效果。图1A表示暴露于通常为腐蚀性或反应性环境110的已知处理腔室部件100的部分横截面视图。例如，腔室部件100可能受到周围环境110中的物种侵蚀，所述侵蚀可引起形成在腔室部件100的表面101上的凹点102或其他缺陷104。取决于反应性环境110，腔室部件100的劣化可能起因于化学或物理侵蚀，且腔室部件100的劣化可能未必引起诸如在图1A中图示的容易看见的缺陷。例如，腔室部件100的化学或物理性质可能被环境110中诸如氟(F)的物种或其他反应性物种(通常表示为“X”)与腔室部件100之间的化学反应所改变，或者被高能物种(即，+离子及-离子)的物理轰击所改变。
图1B表示在腔室部件190上形成涂层150之后，暴露于腐蚀性环境110的腔室部件190的横截面视图。本发明的涂层150可抵抗反应性或腐蚀性环境110的侵蚀，且可降低或避免下伏腔室部件190的劣化。腔室部件190可以是底座、基座、升降销、衬里、加热器、静电夹盘、屏蔽件、边缘环、喷头、圆顶、腔室主体，或其他腔室部件。
在一个实施方式中，涂层150包含氧化镁(MgO)或氧化镧(La2O3)。在另一实施方式中，所述涂层包含氟化镧(LaF3)。涂层150可用于涂布可能暴露于等离子体环境的腔室部件190的内表面。例如，涂层150可施加至铝(Al)或氮化铝(AlN)腔室部件，诸如于CVD腔室内使用的陶瓷加热器。Al及AlN在重复地暴露于高温CVD工艺环境时，通常随时间腐蚀且劣化。涂层150防止加热器表面暴露于腐蚀环境110时的腐蚀。腐蚀环境110的例子可以是在高于400℃的温度下含氟化物等离子体的存在。
可通过不同工艺在腔室部件上形成MgO、La2O3或LaF3的涂层150。涂布工艺通常包括以下步骤：例如，高温蒸发及溅镀，诸如物理气相沉积(PVD)、CVD、等离子体增强CVD(PECVD)、混合CVD、原子层沉积(ALD)、电子束蒸镀，或适用于在腔室部件上沉积涂层的其他工艺。然而只要所述工艺产生具有所需的防腐蚀特性的高质量涂层，特定涂布工艺对本文所述实施方式的实践并非是关键的。
在一个实施方式中，可通过CVD工艺执行涂布工艺以涂布腔室或腔室部件部分。若腔室或腔室部件部分由于CVD沉积工艺的保形性而展现不平坦的表面形貌，则可有利地执行CVD沉积。CVD沉积也适合于在大体平坦表面上的沉积。在使用CVD涂布工艺的实施方式中，可通过提供含镁前驱物及含氧前驱物在腔室部件190上形成包含MgO的涂层150。在使用CVD涂布工艺的实施方式中，可通过提供含镧前驱物及含氧前驱物在腔室部件190上形成包含La2O3的涂层150。
在使用CVD涂布工艺的实施方式中，可通过提供含镧前驱物及含氟前驱物在腔室部件190上形成包含LaF3的涂层150。在所有上述实施方式中，前驱物可以是适用于提供所要涂层的任何前驱物。另外，可连同沉积前驱物气体一起提供诸如惰性气体的载气。
图2表示其中在腔室部件190上形成涂层150的本发明的某些实施方式。在图示的实施方式中，保护涂层150以基板支撑件210形式设置在腔室部件190上。更具体地，基板支撑件210可包含陶瓷主体，所述陶瓷主体由AlN制成且具有嵌入式加热器。基板支撑件210可用于等离子体处理腔室250(诸如，CVD腔室)中，以将腔室部件加热至高处理温度。基板支撑件210的任何暴露表面，在暴露于腐蚀性环境110(诸如，处理气体中的组分，或含有诸如NF3的腔室清洁气体的等离子体)时，易受侵蚀。
在被配置为用于氧化物(即，SiO2)沉积的CVD腔室中，氧化物沉积在腔室部件的表面上，以及腔室250的内表面252及腔室250内部的其他腔室部件(诸如，基板支撑件210)上。为维持高效的工艺及腔室操作，必须自内部腔室表面252及腔室部件移除氧化物沉积物。通常通过使用含氟气体(诸如，NF3)蚀刻掉氧化物沉积物的清洁步骤实现氧化物移除。
在某些实施方式中，通过远程等离子体源(RPS)提供氟给腔室250。RPS从前驱物气体形成等离子体，所述等离子体引起前驱物气体的分解以形成清洁自由基。在一个实施方式中，清洁自由基是F原子或自诸如NF3或CxFy的前驱物气体衍生的F+离子。或者，前驱物气体可为可经反应以形成清洁自由基的任何液体、气体或固体。可在本领域中通常已知的条件下执行RPS清洁以清洁CVD处理腔室250。此类清洁工艺通常使用大于约400℃的温度的氟等离子体。
在氟等离子体清洁腔室250时，氟原子或自由基与存在于腔室250中的其他化合物反应。在一个实施方式中，氟等离子体与已涂布于基板支撑件210的表面上的MgO或La2O3反应。由于MgO或La2O3的化学性质，氟原子与镁或镧键结且置换原先存在于涂层150中的氧。因此，基板支撑件210上的涂层150转换成氟化镁(MgF2)或氟化镧(LaF3)。在基板支撑件210原先涂布有LaF3的实施方式中，LaF3充当保护涂层且LaF3通常是惰性的且在氟等离子体中为不反应的，从而保护AlN加热器免受腐蚀性清洁环境110的影响。
图3表示用于在腔室部件上形成保护涂层的方法步骤。方法300通过提供腔室部件在步骤310处开始。在一个实施方式中，腔室部件包含AlN的陶瓷加热器。在步骤320处，执行涂布工艺以在腔室部件的表面上设置涂层。如上文所论述的涂层可为MgO、La2O3或LaF3中的任一种，或以上各涂层的任何组合。在一个实施方式中，沉积工艺(诸如，CVD工艺)可用于涂布AlN加热器。
随后，在步骤330处，视情况将涂层暴露在含氟等离子体。含氟等离子体与先前沉积的MgO或La2O3涂层反应以形成氟化镁或氟化镧涂层。含氟等离子体可以是在大于约400℃的温度执行的腔室清洁工艺的一部分。在示例性实施方式中，氟化镁或氟化镧抗腐蚀保护涂层被设置在AlN加热器的表面上。
氟化镁及氟化镧涂层可抗CVD腔室处理环境内的反应性物种的侵蚀(化学上或物理上)。因此，氟化镁或氟化镧提供改进的保护，所述改进的保护在存在含氟等离子体的情况下实质上降低AlN加热器的劣化及腐蚀。此外，保护涂层在高于400℃的处理环境中是有效的。
所公开的以便用于高温条件下的CVD腔室的特定实施方式仅为说明性的目的。本文所述的实施方式通常适用于其他腐蚀性环境，诸如在蚀刻、等离子体或反应性工艺中常见的那些腐蚀性环境。
尽管以上针对本发明的实施方式，但可在并未背离本发明的基本范畴的情况下设计本发明的其它及进一步的实施方式，且本发明的范围由以下专利申请范围确定。

Claims (15)

1.一种供用于等离子体处理腔室中的装置，所述装置包含：
腔室部件，所述腔室部件具有表面，其中所述表面包含陶瓷材料；及
涂层，所述涂层设置于所述腔室部件的所述表面上，所述涂层包含氧化镁、氧化镧或氟化镧。
2.如权利要求1所述的装置，其中所述陶瓷表面包含氮化铝。
3.如权利要求1所述的装置，其中所述涂层因暴露于含氟等离子体而包含氟化镁或氟化镧。
4.如权利要求1所述的装置，其中所述腔室部件选自下列所组成之群组底座、基座、升降销、衬里、加热器、静电夹盘、屏蔽件、边缘环、喷头、圆顶及腔室主体。
5.一种在适用于等离子体处理腔室中的腔室部件上形成涂层的方法，所述方法包含以下步骤：
用氧化镁、氧化镧或氟化镧中的至少一种在等离子体处理腔室部件的表面上沉积涂层。
6.如权利要求5所述的方法，所述方法进一步包含以下步骤：将所述涂层暴露于含氟等离子体。
7.如权利要求5所述的方法，其中将所述涂层暴露于含氟等离子体的所述步骤在大于约400℃的温度执行。
8.如权利要求5所述的方法，其中所述腔室部件包含氮化铝。
9.如权利要求5所述的方法，其中沉积所述涂层的所述步骤进一步包含以下步骤：提供含镁前驱物及含氧前驱物。
10.如权利要求5所述的方法，其中沉积所述涂层的所述步骤进一步包含以下步骤：提供含镧前驱物及含氧前驱物。
11.如权利要求5所述的方法，其中沉积所述涂层的所述步骤进一步包含以下步骤：提供含镧前驱物及含氟前驱物。
12.如权利要求5所述的方法，其中所述沉积步骤进一步包含以下步骤：
执行CVD工艺以沉积所述涂层。
13.如权利要求6所述的方法，其中将所述涂层暴露于含氟等离子体的步骤包含以下步骤：用远程等离子体源产生所述含氟等离子体。
14.如权利要求5所述的方法，所述方法进一步包含以下步骤：
通过暴露于含氟等离子体将所述涂层的至少一部分转换成氟化镁。
15.如权利要求5所述的方法，所述方法进一步包含以下步骤：
通过暴露于含氟等离子体将所述涂层的至少一部分转换成氟化镧。
CN201480013077.0A 2013-03-08 2014-02-06 具有适于保护抵抗氟等离子体的保护涂层的腔室部件 Pending CN105190847A (zh)

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