TWI617694B - 用於保護對抗氟電漿之具保護塗層的腔室組件 - Google Patents

用於保護對抗氟電漿之具保護塗層的腔室組件 Download PDF

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TWI617694B
TWI617694B TW103107634A TW103107634A TWI617694B TW I617694 B TWI617694 B TW I617694B TW 103107634 A TW103107634 A TW 103107634A TW 103107634 A TW103107634 A TW 103107634A TW I617694 B TWI617694 B TW I617694B
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蓋葉頌Ｔ
方麥可
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Abstract

本文所述之實施例係關於一種在腐蝕環境內保護下伏腔室組件(亦即，塗層經沉積於其上之物件)免受腐蝕或劣化之保護塗層。

Description

用於保護對抗氟電漿之具保護塗層的腔室組件
本文所述之實施例係關於一種在腐蝕環境內保護下伏腔室組件(亦即，塗層經沉積於其上之物件)或組件部分免受腐蝕或劣化之保護塗層。
在半導體腔室組件處理系統中，處理腔室之內部往往曝露於各種腐蝕性或反應性環境。此等反應性環境可由穩定的腐蝕性氣體(諸如，Cl2)或其他反應性物種(包括自製程反應產生之自由基或副產物)引起。在電漿處理應用(諸如，蝕刻或化學氣相沉積(CVD))中，經由其他分子之分解亦產生反應性物種，該等分子本身可具有或可不具有腐蝕性或反應性。需要保護性及抗腐蝕措施來確保處理腔室或腔室內之組件的製程效能及耐久性。
降低對腔室或腔室內之組件之腐蝕亦減少腔室內之非所要粒子之存在。舉例而言，往往在處理腔室中使用鍍鎳組件來防止受到Cl2腐蝕。含氟氣體(諸如，NF3或CHF3等) 產生高度反應性的原子氟(F)。高溫CVD製程往往使用AlN加熱器，該等AlN加熱器易受來自諸如氟基清洗氣體之元素的侵蝕。舉例而言，由AlN製成之陶瓷加熱器受NF3侵蝕，NF3往往在某些腔室組件處理系統中用作清洗氣體。AlN加熱器通常係昂貴的，且需要增加加熱器表面之使用壽命且減少腔室中之非所要粒子的存在。
因此，在本領域中存在對諸如陶瓷加熱器之半導體處理組件的需要，該半導體處理組件具有對諸如氟之元素之經改良抗性。
本文所述之實施例通常係關於用於半導體腔室組件之保護塗層。更特定言之，本文所述之實施例係關於一種適用於對抗氟電漿之增加的抗性之氮化鋁(AlN)加熱器之保護塗層。
在一個實施例中，提供一種供用於半導體處理腔室中之腔室組件。該腔室組件具有由氮化鋁組成之表面。該表面具有一塗層且該塗層包含氟化鎂或氟化鑭。
在另一實施例中，提供一種在供用於半導體處理腔室中之腔室組件上形成塗層之方法。該方法包括以下步驟：在腔室組件之表面上沉積塗層。該塗層包含氧化鎂、氧化鑭或氟化鑭中之至少一者。該塗層可視情況曝露於含氟電漿。
100‧‧‧習知處理腔室組件/腔室組件
101‧‧‧表面
102‧‧‧凹點
104‧‧‧其他缺陷
110‧‧‧腐蝕性或反應性環境
150‧‧‧塗層
190‧‧‧腔室組件
210‧‧‧基板支撐件
250‧‧‧電漿處理腔室
300‧‧‧方法
310‧‧‧步驟
320‧‧‧步驟
330‧‧‧步驟
為了以可詳細理解本發明之上述特徵結構的方式，可參照實施例對簡要概述於上文中之本發明進行更加詳細的 描述，該等實施例中之一些實施例圖示於附圖中。然而應注意的是，附圖僅圖示本發明之典型實施例且因此附圖不被視為限制本發明之範疇，因為本發明可允許其他等效實施例。
第1A圖圖示曝露於通常為腐蝕性或反應性環境之習知處理腔室之部分橫剖面視圖；第1B圖圖示曝露於具有保護塗層之腐蝕性環境之處理腔室組件的部分橫剖面視圖；第2圖圖示具有處理腔室組件之本發明的某些實施例，該處理腔室組件具有設置在電漿處理腔室中之保護塗層；及第3圖圖示用於在腔室組件上形成保護塗層的方法步驟。
為了促進理解，在可能的情況下，已使用相同的元件符號指示諸圖所共用之相同元件。可以預期，一個實施例之元件及特徵結構可有利地併入其他實施例而無需進一步詳述。
本文所述之實施例係關於一種在腐蝕環境內保護下伏腔室組件(亦即，塗層經沉積於其上之物件)或組件部分免受腐蝕或劣化之保護塗層。
第1A-B圖示意性圖示在腔室組件上之塗層的保護作用。第1A圖圖示曝露於通常為腐蝕性或反應性環境110之習知處理腔室組件100之部分橫剖面視圖。舉例而言，腔室組件100可經歷周圍環境110中之物種侵蝕，此侵蝕可引起 形成在腔室組件100之表面101上之凹點102或其他缺陷104。取決於反應性環境110，腔室組件100之劣化可起因於化學或物理侵蝕，且腔室組件100之劣化可未必引起諸如在第1A圖中圖示之易見缺陷。舉例而言，可藉由環境110中之諸如氟(F)之物種或其他反應性物種(通常表示為「X」)與腔室組件100之間的化學反應或藉由高能物種(亦即，+離子及-離子)之物理轟擊來變更腔室組件100之化學或物理性質。
第1B圖圖示在已於腔室組件190上形成塗層150之後，曝露於腐蝕性環境110之腔室組件190的橫剖面視圖。本發明之塗層150係抗反應性或腐蝕環境110侵蝕的，且可降低或避免下伏腔室組件190之劣化。腔室組件190可為底座、基座、舉升銷、襯墊、加熱器、靜電夾盤、遮蔽件、邊緣環、噴淋頭、圓頂、腔室主體，或其他腔室組件。
在一個實施例中，塗層150包含氧化鎂(MgO)或氧化鑭(La2O3)。在另一實施例中，該塗層包含氟化鑭(LaF3)。塗層150可用於塗佈可能曝露於電漿環境之腔室組件190之內表面。舉例而言，塗層150可施加至鋁(Al)或氮化鋁(AlN)腔室組件，諸如用於CVD腔室內之陶瓷加熱器。Al及AlN在重複曝露於高溫CVD製程環境時通常隨時間腐蝕且劣化。塗層150防止加熱器表面曝露於腐蝕環境110時之腐蝕。腐蝕環境110之實例可為在高於400℃之溫度下含氟化物電漿之存在。
可藉由不同製程在腔室組件上形成MgO、La2O3或LaF3之塗層150。塗佈製程通常包括以下步驟：例如，高溫蒸發及濺鍍，諸如物理氣相沈積(PVD)、CVD、電漿增強CVD (PECVD)、混合CVD、原子層沉積(ALD)、電子束蒸鍍，或適用於在腔室組件上沉積塗層之其他製程。然而，特定塗佈製程對本文所述之實施例之實踐並非關鍵的，只要該製程產生具有所要防腐蝕特性之高品質塗層。
在一個實施例中，可藉由CVD製程執行塗佈製程以塗佈腔室或腔室組件部分。若腔室或腔室組件部分由於CVD沉積製程之正形性而展現不平坦構形，則可有利地執行CVD沉積。CVD沉積亦適合於在大體平坦表面上之沉積。在使用CVD塗佈製程之實施例中，可藉由提供含鎂前驅物及含氧前驅物在腔室組件190上形成包含MgO之塗層150。在使用CVD塗佈製程之實施例中，可藉由提供含鑭前驅物及含氧前驅物在腔室組件190上形成包含La2O3之塗層150。
在使用CVD塗佈製程之實施例中，可藉由提供含鑭前驅物及含氟前驅物在腔室組件190上形成包含LaF3之塗層150。在所有上述實施例中，前驅物可為適用於提供所要塗層之任何前驅物。另外，可連同沉積前驅物氣體一起提供諸如惰性氣體之載氣。
第2圖圖示其中在腔室組件190上形成塗層150之本發明的某些實施例。在所圖示之實施例中，保護塗層150以基板支撐件210形式設置在腔室組件190上。更特定言之，基板支撐件210可包含陶瓷主體，該陶瓷主體由AlN製成且具有嵌入式加熱器。基板支撐件210可用於電漿處理腔室250(諸如，CVD腔室)中，以將腔室組件加熱至高處理溫度。基板支撐件210之任何曝露表面在曝露於腐蝕性環境110(諸 如，處理氣體中之組分，或含有諸如NF3之腔室清洗氣體之電漿)時易受侵蝕。
在經配置用於氧化物(亦即，SiO2)沉積之CVD腔室中，氧化物沉積於腔室組件之表面上，以及腔室250之內表面252及腔室250內部之其他腔室組件(諸如，基板支撐件210)上。為維持有效製程及腔室操作，必須自內部腔室表面252及腔室組件移除氧化物沉積物。通常經由採用含氟氣體(諸如，NF3)蝕刻掉氧化物沉積物之清洗步驟實現氧化物移除。
在某些實施例中，經由遠端電漿源(RPS)提供氟給腔室250。RPS自前驅物氣體形成電漿，該電漿引起前驅物氣體之分解以形成清洗自由基。在一個實施例中，清洗自由基係F原子或自諸如NF3或CxFy之前驅物氣體衍生之F+離子。或者，前驅物氣體可為可經反應以形成清洗自由基之任何液體、氣體或固體。可在本領域中通常已知之條件下執行RPS清洗以清洗CVD處理腔室250。此類清洗製程通常使用大於約400℃之溫度下的氟電漿。
在氟電漿清洗腔室250時，氟原子或自由基與存在於腔室250中之其他化合物反應。在一個實施例中，氟電漿與已塗佈於基板支撐件210之表面上的MgO或La2O3反應。由於MgO或La2O3之化學性質，氟原子與鎂或鑭鍵結且置換原先存在於塗層150中之氧。因此，基板支撐件210上之塗層150轉換成氟化鎂(MgF2)或氟化鑭(LaF3)。在基板支撐件210原先塗佈有LaF3之實施例中，LaF3充當保護塗層且LaF3 通常係惰性的且在氟電漿中為不反應的，從而保護AlN加熱器免受腐蝕性清洗環境110之影響。
第3圖圖示用於在腔室組件上形成保護塗層的方法步驟。方法300藉由提供腔室組件在步驟310處開始。在一個實施例中，腔室組件係包含AlN之陶瓷加熱器。在步驟320處，執行塗佈製程以在腔室組件之表面上設置塗層。如上文所論述之塗層可為MgO、La2O3或LaF3中之任一者，或以上各者之任何組合。在一個實施例中，沉積製程(諸如，CVD製程)可用於塗佈AlN加熱器。
隨後，在步驟330處，將塗層視情況曝露於含氟電漿。含氟電漿與先前沉積之MgO或La2O3塗層反應以形成氟化鎂或氟化鑭塗層。含氟電漿可為在大於約400℃之溫度下執行之腔室清洗製程的部分。在示例性實施例中，抗氟化鎂或氟化鑭腐蝕的保護塗層經設置在AlN加熱器之表面上。
氟化鎂及氟化鑭塗層可抗CVD腔室處理環境內之反應性物種之侵蝕(化學上或物理上)。因此，氟化鎂或氟化鑭提供改良的保護，該改良的保護在存在含氟電漿之情況下實質上降低AlN加熱器之劣化及腐蝕。此外，保護塗層在高於400℃之處理環境中係有效的。
所揭示之以便用於高溫條件下之CVD腔室的特定實施例意謂僅為說明性的。本文所述之實施例通常適用於其他腐蝕性環境，諸如在蝕刻、電漿或反應性製程中常見之彼等腐蝕性環境。
儘管上文針對本發明之實施例，但可在不脫離本發 明之基本範疇的情況下設計本發明之其他與進一步實施例，且本發明之範疇係由以下申請專利範圍決定。
300‧‧‧方法
310‧‧‧步驟
320‧‧‧步驟
330‧‧‧步驟

Claims (10)

  1. 一種電漿處理腔室組件，包含：一腔室組件，該腔室組件具有一表面，該表面包含氮化鋁；以及一塗層，該塗層設置於該腔室組件之該表面上，該塗層包含氧化鎂或氟化鑭。
  2. 如請求項1所述之電漿處理腔室組件，其中回應於曝露於一含氟電漿，該塗層包含氟化鎂或氟化鑭。
  3. 如請求項1所述之電漿處理腔室組件，其中該腔室組件係選自由以下各者組成之群組：一底座、一基座、一舉升銷、一襯墊、一加熱器、一靜電夾盤、一遮蔽件、一邊緣環、一噴淋頭、一圓頂及一腔室主體。
  4. 一種在供用於一電漿處理腔室中之一腔室組件上形成一塗層的方法，該方法包含以下步驟：用氧化鎂或氟化鑭中之至少一者在一氮化鋁電漿處理腔室組件之一表面上沉積一塗層。
  5. 如請求項4所述之方法，該方法進一步包含以下步驟：將該塗層曝露於一含氟電漿。
  6. 如請求項4所述之方法，其中將該塗層曝露於一含氟電 漿之該步驟係在大於約400℃之一溫度下執行。
  7. 如請求項4所述之方法，其中沉積該塗層之該步驟進一步包含以下步驟：提供一含鑭前驅物及一含氟前驅物。
  8. 如請求項4所述之方法，其中該沉積步驟進一步包含以下步驟：執行一CVD製程以沉積該塗層。
  9. 如請求項5所述之方法，其中將該塗層曝露於一含氟電漿之步驟包含以下步驟：在一遠端電漿源中產生該含氟電漿。
  10. 如請求項4所述之方法，該方法進一步包含以下步驟：經由曝露於一含氟電漿將該塗層之至少一部分轉換成氟化鎂。
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US20170204516A1 (en) 2017-07-20
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CN105190847A (zh) 2015-12-23
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