CN101335227A - 聚合物陶瓷e-吸盘 - Google Patents
聚合物陶瓷e-吸盘 Download PDFInfo
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- CN101335227A CN101335227A CN200810129521.1A CN200810129521A CN101335227A CN 101335227 A CN101335227 A CN 101335227A CN 200810129521 A CN200810129521 A CN 200810129521A CN 101335227 A CN101335227 A CN 101335227A
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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Abstract
本发明涉及用于夹持工作基底的聚合物陶瓷E-吸盘,包括三层,其中非导电层的介电常数选择成为吸盘提供总体低的电容。在吸盘组件中,与基底例如晶片接触的顶部介电层具有大于约5的介电常数,大于约1E6ohm.m的电阻率;但底部介电层具有小于约5的介电常数,大于约1E10ohm.m的电阻率。中间层具有电阻率小于约1ohm.m的导电层。静电吸盘可粘附于涂敷抗电弧电介质的散热器。散热器也可用作RF电极。散热器可提供有冷却剂和气体槽道以将冷却气体供应到晶片背部。散热器可具有供给通路以对静电吸盘内的分段电极充电。供给通路、供气孔和提升销用的通道可用陶瓷或聚合物衬里以防止对散热器的任何放电。静电吸盘用于在半导体工具中夹持工作基底如Si、GaAs、SiO2等。
Description
技术领域
本发明总体涉及一种用于半导体制造的静电吸盘(E-吸盘)。更具体来说,本发明涉及改进的多层静电和陶瓷吸盘的使用和制造,各层优选具有不同的介电常数和电阻率。
背景技术
静电吸盘是用于半导体制造过程的已知设备。这类吸盘消除了先前使用的机械夹持设备的需求,机械夹持设备通常很难精确地使用,并且通常向对半导体制造室引入污染物。吸盘支撑半导体晶片制造或加工室内的基底。设计者已经研发了静电吸盘,静电吸盘包括与埋置的金属导体结合的陶瓷。这些吸盘通常称作“陶瓷吸盘”。陶瓷吸盘保持静电电荷,静电电荷吸引住基底例如半导体制造室内的晶片。一些设计依靠粘结类型的组件连接,将金属导体固定在复合的陶瓷层内,从而形成吸盘。
已知的设备包含支撑在金属基体上的多层陶瓷组成部分。但是,这些已知的设计具有多至10秒或更久的延长的充放电周期。这样的充放电周期在要求更快产出的多数现代半导体制造工艺中被认为是不切实际的。实际上,吸盘结构中的金属基体容易产生短路或电弧,从而导致电极和基体之间的泄漏。这类电弧能够耗竭保持工件到位的存储电荷,并且暴露的金属基体在等离子室内产生电弧损害。
已经研发了利用静电电荷吸引住工件的混合型吸盘。共有的美国专利No.6,754,062公开了这样的混合型吸盘,包括用于支撑混合型吸盘的介电基体。混合型吸盘自身包含具有导电覆盖层的顶表面,导电覆盖层覆盖介电基体顶表面的至少一部分。导电层接收产生静电电荷的电流,并且是非金属的以在半导体制造过程中存在的动态静电场下维持电荷而没有显著的涡流损失。顶工作表面覆盖导电层并且是平的,当接收在导电层内产生静电电荷的电流时保持工件。
但是,在静电吸盘的设计中,越加需要减少使用静电吸盘的半导体工具上的总电容载荷。已知的吸盘没有提供这种所需的减少。另外,已知的静电吸盘伴随的电弧问题没有被完全解决,因为通常会在某种程度上发生金属基体散热片电弧。解决这些问题的改进的静电吸盘会是非常有利的。
发明内容
根据一种实施方式,本发明涉及一种利用静电电荷固定工件的静电吸盘,该吸盘包括设计成与工件接触的顶部介电层。顶部介电层具有大约5至大约10的介电常数,并且具有在大约1E6ohm.m至大约1E15ohm.m之间的电阻率。吸盘还包括底部介电层,具有优选大约2至大约7的介电常数,并且具有大约1E10ohm.m至大约1E15ohm.m的电阻率。吸盘还包括中间层,具有大约1.5E-8ohm.m至大约1ohm.m的电阻率。
附图说明
通过以下的优选实施方式的描述和附图,本领域技术人员会知道其它的目的、特征、实施方式和优点,其中:
图1示出了本发明一个实施方式的剖面侧视图。
图2示出了本发明一个实施方式的剖面侧视图,示出了连接于散热片的吸盘中的平台表面、气槽和陶瓷衬里气孔(沿图1的线3-3截取所示)。
图3示出了本发明一个实施方式的晶片夹持表面的俯视图,其中该表面具有各种平台结构、气槽、气孔、晶片提升销或晶片接地销用通孔。
图4示出了具有平台表面的晶片/吸盘布置的剖面侧视图,包括共形膜(conformal film)。示出的倾斜供气孔用陶瓷绝缘体衬里以防止电弧(沿图3的线4-4截取所示)。
具体实施方式
本发明公开了一种静电吸盘,或者e-吸盘,包括三层,其中包含的非导电层的介电常数选择成对吸盘提供总体低的电容。在本发明的吸盘组件中,与晶片接触的顶部介电层具有的介电常数为大约5至大约10,优选为大约8至大约10,具有的电阻率为大约1E6ohm.m至大约1E15ohm.m;而底部介电层具有的介电常数为优选大约2至大约7,更优选为大约3至大约5,具有的电阻率为大约1E10ohm.m至大约1E15ohm.m。中间层具有电阻率为大约1.5E-8ohm.m至大约1ohm.m的导电层。
更加精确地选择和调节吸盘复合层特性例如上面刚刚提及的那些特性的能力,允许制造顶部介电层可以是例如陶瓷材料的静电吸盘,其中陶瓷材料例如来自氧化物、氮化物和合金的族或其复合物。这些材料优选为氧化铝、二氧化硅、氧化锆、氧化钇、氧化铍、氮化铝、氮化硼、氮化硅、掺杂陶瓷等及其混合物。底部介电层应该是聚合物或低介电(K)陶瓷,K的范围优选为大约2至大约7,更优选为大约3至大约5。这类有用材料的实例包含聚酰亚胺、碳氟化合物、硅氧烷、SiO2等。
根据本发明设计的吸盘包含的顶部介电层具有比较高的介电常数。吸盘设计有用于冷却气体分布的特征、提升销孔、接地触点、传感器孔等。顶部接触表面可以优选具有平台结构,用于增强晶片背部冷却和减少对晶片的微粒传递。
中间导体层可以由电阻率优选小于大约1ohm.m的任何材料制成,例如W、Ti、Mo、Ta、Al、Ag、Cu、Nb、ITO、Al2O3-TiO2、导电聚合物等及其混合物。电极结构设计成增加存储在吸盘内的能量,其部分用作电容器。导体可以构造成单极、双极或多极结构。平衡电容的相同面积的双极结构是特别合适的。
根据本发明的进一步的实施例,吸盘底层优选是聚合物制成的介电层。优选聚合物具有的介电常数是大约2至大约7,优选是大约3至大约5。聚合物优选是聚酰亚胺膜、氟聚合物膜或硅氧烷膜。聚合物层可以是粘结剂、介电胶、硅树脂基粘结剂、热固化或UV固化粘结剂、催化激活或厌氧固化粘结剂等。陶瓷填充粘结剂是优选的,因为它们可以用来调节介电性能。底层必须能够经受住至少大约450Volts/mils(17KV/mm)的击穿电压。
优选陶瓷填料为介电材料,例如氧化铝、二氧化硅、氧化镁、氮化硼、氮化硅等。由氮化硼和氮化铝制成的陶瓷填料特别有利,其中可以得到增强的热传递。
根据需要,本发明的优选的三层e-吸盘结构可以粘结于金属或陶瓷基体。陶瓷基体用于高的热传递不必要的情况,或者厚膜陶瓷加热器需要在e-吸盘附近的情况。当在过程中需要较高的热传递速率时,需要金属基体散热。根据需要,除了用于液体或气体流动的冷却剂通道以外,金属基体还可以具有模铸加热器。金属基体也可以用作RF电极或参考电极。基体可以设计为散热器,具有冷却剂通道和将另一种冷却剂通过沟槽和孔带至晶片背部的通道。通过提供在可以发生电弧的表面上沉积的氧化铝涂层,可以防止金属基体电弧。这种抗电弧涂层优选利用等离子喷涂工艺进行沉积。除了介电材料的等离子喷涂涂层以外,散热器,当由铝制成时,可以被阳极化以在暴露于低电压的区域内形成阳极化铝膜。
本发明另一个重要的优点是,当粘结于金属基体时,使用聚合物作为底层电介质就不需要热匹配,而在大多数传统吸盘的情况下,底部电介质是陶瓷,这就需要在陶瓷和金属之间的热匹配。根据本发明,聚合物粘结剂层可以独立于陶瓷而膨胀或收缩,由此降低了热应力。
一些已知的静电吸盘可以使用陶瓷作为其顶部和底部电介质。根据本发明的实施方式,顶层包括陶瓷,但是底部介电层是聚合物。优选聚合物填充有陶瓷。这种聚合物陶瓷层允许在给定应用中更好地控制电容储存。聚合层还减轻了来自顶部陶瓷层和底部金属散热器之间的潜在的不同热膨胀的应力。聚合物陶瓷结构可以粘结于金属,金属可以由热喷涂的介电材料涂层保护,介电材料例如是氧化铝、氧化钇、氧化镁、氧化钛和其它合金介电陶瓷等。
本发明的静电吸盘控制半导体室内的由吸盘施加的电容载荷。通过降低电容,减少了电抗性电容部分,因此减轻了匹配不同部分的RF载荷中的典型困难。相比传统的吸盘,本发明的吸盘可以在低熔化温度下制造,获得了显著降低的制造时间和相当的制造成本。使用聚合物或填充陶瓷的聚合物粘结剂允许吸盘中的层被粘结于散热器而不需要匹配各组成层的热膨胀。具有低热膨胀的多数材料也具有低的导热率,这样对陶瓷的热匹配也减小了散热器的导热率。如果在制造吸盘的过程中不需要热匹配,就可以为散热器选择具有高导热率的材料,如本发明的实施方式所提出的那样。
本发明的聚合物陶瓷吸盘可以为吸盘制造提供低成本的方案,由于吸盘需要的电容性电抗补偿较低,因此降低了RF匹配网络的成本。本发明的吸盘具有抗电弧特征,其提供了长的使用寿命和低的所有权成本。图1剖面示出了根据本发明优选实施方式制成的优选聚合物陶瓷e-吸盘。可以通过使用由纯度至少大约99.5%的氧化铝制成的烧结陶瓷顶部介电层1来制造这种结构,具有用于对分段的电极2提供电隔离的隔离肋结构11。通过在隔离肋结构11内溅射钨来沉积电极2。电极也可以通过金属化陶瓷来形成。电极2随后由聚合物陶瓷粘结剂3来包覆,这种陶瓷、金属和聚合物陶瓷层状结构随后粘结于金属散热器14。散热器14由606Al或其它合适的导热合金制成。散热器包括冷却气体槽道4,来自散热器基体处的入口18的冷却气体供给槽道4。散热器被钎焊以形成冷却液体槽道5,槽道5具有用于连通热控制器例如冷却器的入口16和出口17。使用热喷涂设备对散热器涂敷如氧化铝的介电材料层,称作抗电弧涂层6。散热器14的顶部表面19上可以使用介电材料例如烧结陶瓷或热喷涂涂层。暴露于低电压的铝散热器的背部或区域被阳极化13。粘附的ESC通过散热器14连接于DC电力销10A和10B。电力销10A和10B用于对分段的电极2提供能量。根据需要可以对单极或多极e-吸盘的相应分段电极提供一个或多个电力销。散热器14具有用于提升销的通孔8。这些通孔优选由如氧化铝的介电材料衬里。静电吸盘用于真空室内,这样它们需要O形环来相对大气密封真空室。散热器14具有用于RF连接15的构造。
图2剖面示出了晶片夹持表面的细节。另外,示出了本发明的一个关键特征,其中冷却气体通道由例如陶瓷或聚合物的介电材料21衬里。气孔25内部的介电插件防止了对金属基体或散热器14的电弧,这种电弧来自于由于施加在晶片上的偏置电压而会在晶片下面出现的任何等离子电弧。示出的本发明的另一个关键特征是平台结构23,伴随有在晶片夹持表面22上的气槽26。平台结构23是顶部介电表面的一体化部分。但是,平台结构23也可以通过各种薄膜沉积工艺如PVD或CVD沉积在介电表面上,这会被薄膜材料沉积领域的技术人员容易地理解。一体化平台结构23可以包覆在共形膜内,这些膜由包含例如碳、二氧化硅、氮化硅、氮化铝、聚酰亚胺、碳氟化合物或硅氧烷或其组合的材料制成。
平台结构用于减少大约1%至大约25%范围的接触区域。接触区域的减小导致夹持力降低,但是提供了获得快速释放时间的优点。由于接触区域的减小,平台结构还减少了传送到晶片背部的微粒数量。另外,平台结构还尤其允许在晶片夹持过程中冷却气体分布在晶片表面的后面,从而增强了从晶片到顶部介电表面的热传递。
图3示出了聚合物陶瓷e-吸盘的顶部表面。相同的表面在图4中剖面示出。关键的特征是气体密封表面或晶片夹持表面31,升降晶片的提升销或者接触晶片的接地销用的通孔37,用于背部冷却气体均匀压力分布的环形气槽32和径向气槽36的图案,平台结构33,其中平台可以是圆形3A或矩形3B或细长梯形垫3C,以及通过图2中标记为21或图4中标记为45的供气孔连接于冷却气体槽道(如图2的标记4或图4的标记46所示)的一系列气孔35。在散热器内,气孔可以优选由在图2中标记为21或图4中标记为47的介电绝缘体衬里。平台结构可以由共形膜44形成或包覆,共形膜44由碳、二氧化硅、氮化硅或氮化铝、聚酰亚胺、碳氟混合物或硅氧烷等制成。共形膜的存在允许减少传送到晶片背部的微粒。图4也示出了供气孔的变型,其中供气孔45以相对于夹持表面离开法线2至45度的角度由绝缘体47衬里。倾斜的绝缘供气孔允许e-吸盘经受高偏压加工而在供气孔内部不产生电弧。绝缘体47的长度根据给定工艺用的偏置电压量而变化。
在半导体处理室例如蚀刻室内,粘附于e-吸盘的散热器安装在真空室内。散热器连通于图1所示的位置16和17处的介电冷却剂。冷却气体流,例如氦流,随后连通于冷却气体入口18。RF电力施加于位置15处的散热器。e-吸盘电极2被10A和10B处的DC或AC电源充电。在操作过程中,优选晶片以机械化形式,例如用机械手,被带至真空室内并安放在提升销上。提升销随后降低,施加夹持电压以将晶片夹持到位。机械手和提升销缩回。打开背部气体例如氦,优选至5torr至30torr或更高的背部压力。等离子化学的发展产生了制造半导体设备所需要的导电或介电膜的蚀刻。冷却器系统优选用于在整个过程中利用冷却剂循环通过槽道来将散热器维持在稳定的温度。在晶片已经被处理以后,所有的工作气体和RF电压关闭。背部气体随后被关闭并被抽出。这时,夹持电压被关闭以释放晶片。提升销随后优选用于提升晶片,机械手将晶片从处理室取走。根据需要重复晶片夹持、处理和释放循环。在此所限定的聚合物陶瓷吸盘可以用在各种半导体室内,包括例如用于导体或电介质蚀刻、PVD、CVD、离子植入、计量等。
实施例
实施例1
在本发明的一个优选方法中,顶层由纯度至少为大约99.58%的陶瓷氧化铝制成,具有大约8.5至大约9.5的介电常数,1E12ohm.m的电阻率和22KV/mm的击穿电压。电极包括电阻率大约为0.06micro-ohm-m的钨(W)。优选电极可以是单极,或者电极是分段的以优选产生甚至多个极并具有相同的面积并且因此具有相同的电容。底部电介质由聚合物陶瓷层制成,具有3.5的介电常数,大约1E15ohm.m的电阻率和300KV/mm的击穿电压。聚合物陶瓷由填充有氧化铝的硅氧烷化合物制成。这种组件在由6061T6铝制成的散热器上制造和测试。300mm的Si晶片被夹持在真空室内。散热器的暴露表面上使用氧化铝热喷涂层来防止在等离子室内对金属基体的电弧。
实施例2
在另一个优选组装方法中,大约99.5%的陶瓷氧化铝用作顶部电介质,具有大于大约8的介电常数,1E15ohm.m的电阻率和大约22KV/mm的击穿电压。电极由电阻率为0.06micro-ohm-m的钨(W)制成。底部电介质由聚酰亚胺制成,具有3.5的介电常数,1E16ohm.m的电阻率和300KV/mm的击穿电压。这种组件在由6061T6铝制成的散热器上制造和测试。300mm的Si晶片被夹持在真空室内。
在另一个实施例中,制成的吸盘的结构与上述限定的相同,其中聚合物的填料是氮化硼。在又一个实施例中,制成的吸盘的结构与上述限定的相同,其中聚合物的填料是氮化铝。
在进一步的实施例中,制成的吸盘具有由介电常数为6.5的硅酸盐玻璃制成的顶部电介质,带有银导体。介电常数为2.0和介电强度为170KV/mm的碳氟化合物膜用于包覆电极并将顶部的两层粘附于包括6061Al的金属基体。该系统被充电用作双极吸盘,Si晶片被夹持。所测电容从电力销至晶片为5nf,从电力销至支架为2nf。所测电容从支架至晶片也为7nf。当充电至极-极2KV时,自DC供电装置的电流消耗(current draw)小于1μA。晶片被5torr的背压夹持,氦泄漏率小于1sccm。所测的夹持时间小于1秒,所测的松夹时间也小于1秒。
在另一个实验中,Si晶片被直径150mm的GaAs晶片取代。吸盘能够在真空室内以10torr的氮背压夹持晶片,泄漏率大约2sccm。
在另一个实施例中,聚合物陶瓷吸盘粘附于铝散热器。铝表面没有被涂敷。该吸盘在真空室内利用施加于铝支架的RF能量进行了测试。300mm的Si晶片以极-极2KV被夹持在吸盘上。已经发现当仅仅施加DC电压时没有电流消耗,但是已经发现,当RF等离子被激发时,自供电装置就有多余的电流消耗。这表明了从铝支架到地面的放电可能性。在另一个实施例中,同样的聚合物陶瓷吸盘被粘附于铝散热器。铝表面利用热喷涂设备涂敷有大约250μm厚的氧化铝层。该吸盘同样在真空室内利用施加于铝支架的RF能量进行了测试。300mm的Si晶片以极-极2KV被夹持在吸盘上。已经发现,当介电涂层出现在铝表面上时,自供电装置没有电流消耗,表示从铝支架到地面没有放电。该实验表明了热喷涂介电涂层的能力,提供了对金属支架的抗电弧能力。
制成的聚合物陶瓷吸盘也具有大约500μm厚的顶部介电层,大约0.5μm厚的导电层和大约500μm厚的聚合物陶瓷层。制成的吸盘具有两个矩形同心电极。制成的吸盘夹持用于平板显示器的玻璃基底。玻璃基底沉积有ITO膜。该玻璃基底以5KV的极-极电压被夹持,夹持力为10gms/cm2。
在本发明的另一个实施例中,直径大约300mm的静电吸盘由600μm厚的氮化铝制成,具有大约1E10ohm.m的电阻率,并且包括大约沉积1μm厚的钽导电层。电极随后由聚合物陶瓷层包覆,该组件随后粘附于6mm厚的氧化铝盘。氧化铝盘的电阻率是1E14ohm.m。在该结构中,两个相同面积的同心电极以极-极1KV被充电并且硅晶片被夹持在真空室内。夹持力通过剪切力计来测量。晶片以大于50N的剪切力被夹持。该结构表明朝向晶片夹持表面的高电流消耗,但通过下部电介质的电流消耗很低。这示例了本发明的优点,由此顶部和下部电介质的电阻率可以独立地选择以获得用于半导体工具设计和工艺的某些优点。
使用烧结陶瓷包括例如氧化钇、氮化硅和氮化铝来制造顶部介电材料。根据本发明的方法制成的吸盘可以使用各种陶瓷来获得不同于顶部的电介质,来包覆电极,而这使用已知的陶瓷或玻璃陶瓷熔融结构是不可行的。
为了增强热传递并减少从e-吸盘到晶片的微粒传递,多种特征被添加于顶部表面。该表面提供有冷却气体流例如氦、氮或氩。气孔通过该三层结构被设置。吸盘表面设置有径向和周向气槽以改善与晶片接触的整个吸盘表面的气体传递。
顶部介电表面也可以有纹理,伴随有气槽和孔。纹理通过机械加工、腐蚀和/蚀刻顶部介电表面产生。薄介电膜例如DLC、SiO2、AlN、Al2O3和Si3N4随后沉积在晶片夹持表面上以产生纹理。在本发明的一个实施方式中,吸盘的表面首先涂敷SiN。随后利用SiO2产生升高的区域,高度与密封区域的高度相同以最小化气体泄漏率并减少微粒传递。
此外,根据本发明,如下面的表1所示,电极材料和结构也可以改变,各种其它特征以可以改变,但仍然在本教导内容的精神之内。例如,散热器可以被去除或改变,或者可以设计成具有独特的冷却剂通道来获得所需的温度特性,例如提高的温度均匀性。此外,聚酰亚胺挠性加热器可以粘附于这种组件,或者厚膜加热器可以粘附于这种组件。在该模块化结构中,可以在散热器内形成热量,并且聚合物陶瓷e-吸盘可以粘附于散热器。聚合物陶瓷粘结剂的存在会优选提供热阻和介电阻以在例如用于半导体处理的蚀刻或沉积工具中提高温度均匀性。
表1
顶部电介质 | 中间导体 | 底部电介质 | 散热器 | 抗电弧 |
Al2O3Al2O3 +TiO2Y2O3MgOZrOSiNAlNSiO2SiC | WTaMoAlAgCuAlxTiOyNbInITO | 聚合物(聚酰亚胺、碳氟化合物、硅氧烷),陶瓷填充的聚合物 | 陶瓷,例如Al2O3、BN、AlN、SiC、SiN金属或合金,例如Al 6061、T6-4、Inconel、Monel等金属复合物SiCAl | 热喷涂的Al2O3、Y2O3、MgO、TiO2、ZrO或者氧化物的组合,例如Al2O3+TiO2等阳极化区域,聚合物膜或环 |
虽然已经参照具体实施方式描述了本发明,但是本领域技术人员会明白,可以进行各种改变、改型和替换以及可以使用等同物,而不会脱离并且认为包含在权利要求的范围内。
Claims (12)
1.一种利用静电电荷固定工件的静电吸盘,该吸盘包括:
顶部介电层,设计成与工件接触,所述顶层具有大约5至大约10的介电常数,并且具有在大约1E6 ohm.m至大约1E15ohm.m之间的电阻率;
底部介电层,具有优选大约2至大约7的介电常数,并且具有大约1E12ohm.m至大约1E15ohm.m的电阻率;和
中间层,具有大约1.5E-8ohm.m至大约1ohm.m的电阻率。
2.权利要求1的静电吸盘,其中中间层是导电的。
3.权利要求1的静电吸盘,其中工件包含的材料选自:Si、GaAs和玻璃。
4.权利要求1的静电吸盘,其中顶层包含的材料选自:氧化物、氮化物、合金氧化物、合金氮化物及其组合。
5.权利要求1的静电吸盘,其中顶层包含的材料选自:氧化铝、氧化钛、二氧化硅、氧化锆、氧化钇、氧化铍、氮化铝、氮化硼、氮化硅及其组合。
6.权利要求1的静电吸盘,其中顶层包含的材料选自由掺杂陶瓷组成的组。
7.权利要求1的静电吸盘,其中底层包含介电常数在大约2至大约7之间的聚合物。
8.权利要求1的静电吸盘,其中底层包含的材料选自:聚酰亚胺、碳氟化合物、硅氧烷、二氧化硅、玻璃陶瓷及其组合。
9.权利要求1的静电吸盘,其中中间层包含的材料选自:钨、钛、钼、钽、银、铜、铝、铟、铌、ITO、掺杂二氧化钛的氧化铝及其组合。
10.权利要求1的静电吸盘,其中中间层包含导电聚合物。
11.权利要求1的静电吸盘,还包括顶部介电陶瓷,顶部介电陶瓷包含用于减少晶片接触区域的平台结构。
12.权利要求1的静电吸盘,其中平台结构由薄膜包覆,所述薄膜包含的材料选自:碳、二氧化硅、氮化硅、氮化铝、硅氧烷、聚酰亚胺、碳氟化合物或其组合。
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JP2004503450A (ja) * | 2000-06-14 | 2004-02-05 | アリソン ハーマン | 電気付着デバイス |
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Also Published As
Publication number | Publication date |
---|---|
CN101335227B (zh) | 2012-01-18 |
TW200915473A (en) | 2009-04-01 |
US7667944B2 (en) | 2010-02-23 |
WO2009005921A3 (en) | 2009-02-12 |
US20090002913A1 (en) | 2009-01-01 |
WO2009005921A2 (en) | 2009-01-08 |
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