CN112219273B - 静电吸盘及其制造方法 - Google Patents
静电吸盘及其制造方法 Download PDFInfo
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- CN112219273B CN112219273B CN201980037612.9A CN201980037612A CN112219273B CN 112219273 B CN112219273 B CN 112219273B CN 201980037612 A CN201980037612 A CN 201980037612A CN 112219273 B CN112219273 B CN 112219273B
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- Prior art keywords
- rare earth
- composite oxide
- electrostatic chuck
- alumina
- oxide
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002131 composite material Substances 0.000 claims abstract description 77
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 67
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 67
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000005245 sintering Methods 0.000 claims abstract description 33
- 238000001179 sorption measurement Methods 0.000 claims abstract description 24
- 238000003795 desorption Methods 0.000 claims abstract description 22
- 230000004044 response Effects 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 28
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 28
- 239000000395 magnesium oxide Substances 0.000 claims description 22
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 7
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- 238000005238 degreasing Methods 0.000 claims description 4
- 239000011363 dried mixture Substances 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- ZZPXFOQZGDDSMP-UHFFFAOYSA-N [Eu].[Gd].[Sm].[Ce].[La] Chemical compound [Eu].[Gd].[Sm].[Ce].[La] ZZPXFOQZGDDSMP-UHFFFAOYSA-N 0.000 claims description 3
- OVGLRMYXYZUWSK-UHFFFAOYSA-N [Eu].[Sm].[Ce] Chemical compound [Eu].[Sm].[Ce] OVGLRMYXYZUWSK-UHFFFAOYSA-N 0.000 claims description 3
- 230000001476 alcoholic effect Effects 0.000 claims description 3
- QFOPTAFTJSCRME-UHFFFAOYSA-N [Eu].[Gd].[Ce].[Sm] Chemical compound [Eu].[Gd].[Ce].[Sm] QFOPTAFTJSCRME-UHFFFAOYSA-N 0.000 claims description 2
- OYHRMHNAGVKNDN-UHFFFAOYSA-N [Gd].[Ce].[La] Chemical compound [Gd].[Ce].[La] OYHRMHNAGVKNDN-UHFFFAOYSA-N 0.000 claims description 2
- CJQQXUHOWONEDF-UHFFFAOYSA-N [Gd].[Eu].[Sm] Chemical compound [Gd].[Eu].[Sm] CJQQXUHOWONEDF-UHFFFAOYSA-N 0.000 claims description 2
- NLBBKOXMTCLASE-UHFFFAOYSA-N [La].[Eu].[Sm].[Gd] Chemical compound [La].[Eu].[Sm].[Gd] NLBBKOXMTCLASE-UHFFFAOYSA-N 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 27
- 239000000758 substrate Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 238000000465 moulding Methods 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910001954 samarium oxide Inorganic materials 0.000 description 5
- 229940075630 samarium oxide Drugs 0.000 description 5
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- MAMCHKZYNGWYAS-UHFFFAOYSA-N [Sm].[Ce] Chemical compound [Sm].[Ce] MAMCHKZYNGWYAS-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- TVYNCCPJWWBXRT-UHFFFAOYSA-N [Sm].[Gd] Chemical compound [Sm].[Gd] TVYNCCPJWWBXRT-UHFFFAOYSA-N 0.000 description 2
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001940 europium oxide Inorganic materials 0.000 description 2
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000001694 spray drying Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- IZCUOLNYELHOEC-UHFFFAOYSA-N [Eu].[Ce] Chemical compound [Eu].[Ce] IZCUOLNYELHOEC-UHFFFAOYSA-N 0.000 description 1
- WMOHXRDWCVHXGS-UHFFFAOYSA-N [La].[Ce] Chemical compound [La].[Ce] WMOHXRDWCVHXGS-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- -1 alumina (Al) Chemical compound 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- MDFCXYVJUZMYCJ-UHFFFAOYSA-N europium gadolinium Chemical compound [Eu][Gd] MDFCXYVJUZMYCJ-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种静电吸盘及其制造方法,所述静电吸盘具有高体积电阻率以降低漏电流,从而改善半导体晶片的吸附和解吸响应特性。所述静电吸盘是烧结体,在所述烧结体中浸有电极以通过静电力固定半导体晶片,并且所述静电吸盘包括氧化铝、烧结助剂和包含2至5种不同的稀土金属的稀土复合氧化物,具有2秒以下的半导体晶片的吸附和解吸响应特性,并且室温下的体积电阻率为1.0×1016Ω·cm至1.0×1017Ω·cm。
Description
技术领域
本申请要求基于在2018年11月8日递交的韩国专利申请10-2018-0136671号的优先权的权益,其全部内容在此通过引用并入。
本发明涉及一种用于通过静电力固定半导体晶片等的静电吸盘,更具体地,涉及一种能够通过高体积电阻率减少漏电流来改善半导体晶片的吸附和解吸响应特性的静电吸盘及其制造方法。
背景技术
静电吸盘(ESC)是通过使用静电力水平固定半导体晶片或LCD玻璃衬底的装置,并且根据吸附方法主要分为库仑型静电吸盘和Johnson-Rahbek型静电吸盘。其中,Johnson-Rahbek型静电吸盘通常具有1×109~1×1012Ω·cm的低体积电阻率特性,由于其低体积电阻率特性,使晶片吸附电介质表面上的电荷带电,并通过这些表面电荷的静电吸引来固定晶片。另一方面,库仑型静电吸盘通过利用电介质的上表面和下表面上存在的不同电荷之间的静电吸引来固定晶片。在库仑型静电吸盘中,只有当电介质的体积电阻率为1×1015Ω·cm以上时,漏电流才小且晶片解吸性能才优异,并且随着半导体晶片尺寸的增大,在整个晶片接触表面上可能不能均匀地形成足够的静电吸附力。
同时,对于静电吸盘,使用主要由铝制成的材料,例如氧化铝(Al2O3)或氮化铝(AlN)。然而,由于氧化铝烧结体在室温下具有1×1014Ω·cm以上的体积电阻率,因此为了使用氧化铝作为主要原料并具有足够的吸附速率和优良的电流响应特性,静电吸盘应使用库仑型方法而不是Johnson-Rahbek型方法制造。
然而,传统的库仑型静电吸盘的问题在于,当超出特定温度范围时,体积电阻率不高,并且即使在特定温度下也不容易保持体积电阻率,因此吸附力不稳定。此外,传统的静电吸盘的缺点在于,存在大量的电流从静电吸盘泄漏到衬底,并且衬底解吸时的响应速度慢,因此不能获得良好的解吸响应。因此,需要开发一种能够解决上述问题的新型库仑型静电吸盘。
发明内容
技术问题
因此,本发明涉及一种静电吸盘及其制造方法,该静电吸盘能够通过高体积电阻率减小漏电流来改善半导体晶片的吸附和解吸响应特性。
技术方案
为了实现上述目的,本发明涉及一种静电吸盘,该静电吸盘是烧结体,在该烧结体中浸有电极以通过静电力固定半导体晶片,并且该静电吸盘包括:氧化铝;烧结助剂;和包含2至5种不同的稀土金属的稀土复合氧化物,该静电吸盘具有2秒以下的半导体晶片的吸附和解吸响应特性,并且室温下的体积电阻率为1.0×1016至1.0×1017Ω·cm。
另外,本发明提供了一种制造静电吸盘的方法,其包括:步骤a)在研磨下将两种以上不同的稀土金属氧化物粉末和溶剂湿混合,然后将其干燥、造粒和热处理,从而制备含有2至5种不同的稀土金属的稀土复合氧化物;b)向制得的稀土复合氧化物中提供氧化铝、烧结助剂、醇和粘合剂,然后将它们混合;c)将步骤b)中的混合物干燥以去除醇组分;d)将经干燥的混合物成型并加工以制成预成型体;e)对预成型体进行脱脂以去除粘合剂组分;和f)将经脱脂的预成型体烧结,然后抛光。
有利效果
根据本发明的静电吸盘及其制造方法,由于高体积电阻率而减少了漏电流,因此可以改善半导体晶片的吸附和解吸响应特性。
附图说明
图1是比对本发明的一个实施例的静电吸盘的衬底吸附和解吸时间与比较例的静电吸盘的衬底吸附和解吸时间的图表。
具体实施方式
以下将详细描述本发明。
本发明的静电吸盘是库仑型静电吸盘,该静电吸盘是烧结体,在该烧结体中浸有电极以通过静电力固定半导体晶片,并且该静电吸盘包括:氧化铝;烧结助剂;和包含2至5种不同的稀土金属的稀土复合氧化物,该静电吸盘具有2秒以下的半导体晶片的吸附和解吸响应特性,并且室温下的体积电阻率为1.0×1016至1.0×1017Ω·cm。
稀土复合氧化物用于降低静电吸盘的导电性,并且可以以非常小的量使用,并且可以包括两种以上、优选2至5种不同的稀土金属氧化物。稀土金属可以是钪(Sc)、钇(Y)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)和镥(Lu)等。此外,含有这种稀土金属的稀土金属氧化物的纯度优选为99%以上,但不限于此。另外,稀土金属氧化物的相为粉末,并且其粒度优选为10μm以下,但不限于此。
因此,稀土复合氧化物没有特别的限制,只要其是2至5种不同的稀土金属氧化物的复合氧化物即可,例如,包含两种不同的稀土金属的复合氧化物,如铕-钆复合氧化物(EuGdOX)、钐-钆复合氧化物(SmGdOX)、铈-铕复合氧化物(CeEuOX)、钐-铈复合氧化物(SmCeOX)、钆-钐复合氧化物(GdSmOX)和镧-铈复合氧化物(LaCeOX);包含三种不同的稀土金属的复合氧化物,如钐-铈-铕复合氧化物(SmCeEuOX)、钆-铈-镧复合氧化物(GdCeLaOX)和铕-钆-钐复合氧化物(EuGdSmOX);包含四种不同稀土金属的复合氧化物,如钐-铈-钆-铕复合氧化物(SmCeGdEuOX)和钆-钐-铕-镧复合氧化物(GdSmEuLaOX);包含五种不同稀土金属的复合氧化物,例如钐-铈-铕-钆-镧复合氧化物(SmCeEuGdLaOX)等。
如果稀土复合氧化物包含两种以上不同的稀土金属氧化物,则一种稀土金属可以固溶在另一种(或任何一种)稀土金属氧化物中。由此,任何一种稀土金属氧化物的晶体发生改变,因此,与单一稀土金属氧化物相比,稀土复合氧化物可以具有增加的氧晶格缺陷。也就是说,用于本发明的稀土复合氧化物不同于两种稀土金属氧化物的简单混合物以及单一稀土金属氧化物。
这样,具有增加的氧晶格缺陷的稀土复合氧化物提高了界面反应性,从而有效地与氧化铝或晶格氧的界面反应,使得复合氧化物可以沿氧化铝的晶界形成(即,导电晶相沿氧化铝的晶界形成)。同时,导电率可根据稀土复合氧化物的含量而增加或降低。具体地,如果稀土复合氧化物的使用量为1%重量以下,则其可以位于界面处以降低导电率,如果稀土复合氧化物的使用量为几重量%,则导电率反而增加,并且如果稀土复合氧化物的使用量为几十重量%,则导电率再次降低。因此,在涉及库仑型静电吸盘的本发明中,相对于烧结体的总重量(氧化铝+烧结助剂如氧化镁+稀土复合氧化物),稀土复合氧化物可以以大于0%重量至1%重量以下(优选0.01重量%至1重量%,更优选0.1重量%至1重量%)的非常少量或以几十重量%的量使用。
此外,稀土复合氧化物可以以各种混合比含有不同类型的稀土金属氧化物。例如,稀土复合氧化物可通过适当混合单种稀土金属氧化物以使稀土复合氧化物的目标效果最大化来制备,例如,稀土复合氧化物可包含重量比为2.5~3.5:1的两种稀土金属氧化物,重量比为1~3.5:0.5~2.5:1的三种稀土金属氧化物,重量比为1.5~3.5:0.5~2.5:1~2.5:1的四种稀土金属氧化物,或重量比为1~3:0.5~1.5:0.5~1.5:1~2:1的五种稀土金属氧化物等。
更具体地,SmCeEuOX包含的各稀土金属氧化物的重量比为2:1:1,GdCeLaOX包含的重量比为3:2:1,EuGdSmOX包含的重量比为1.5:1.5:1,SmCeGdEuOX包含的重量比为2:1:1.5:1,GdSmEuLaOX包含的重量比为3:2:2:1,SmCeEuGdLaOX包含的重量比为2:1:1:1.5:1。
氧化铝(Al2O3)是静电吸盘的主要成分,其用于均匀地保持静电吸盘的表面温度。优选氧化铝(Al2O3)具有99%以上的纯度,优选99.5%以上。此外,基于烧结体的总重量,氧化铝的含量为90重量%至99重量%,优选92重量%至99重量%,更优选95重量%至99重量%。如果氧化铝的含量小于90重量%,则氧化铝的原始物理特性如体积电阻率和响应特性可能随着剩余烧结助剂等的含量增加而变差。如果氧化铝含量超过99重量%,则可能存在难以获得均匀烧结体的问题。此外,在此未描述的与氧化铝相关的描述可以比照适用于本领域已知的描述。
烧结助剂包含选自由氧化镁(MgO)、氧化钇(Y2O3)和二氧化硅(SiO2)组成的组中的至少一种,并且烧结助剂用于增加稀土复合氧化物中稀土金属的固溶量,并用于在烧结期间产生液相,抑制晶界迁移和加快材料输送速率。基于烧结体的总重量,烧结助剂的含量大于0重量%至10重量%以下,优选0.5重量%至10重量%以下,更优选1重量%至10重量%以下。如果烧结助剂的含量在上述范围之外,则可能存在静电吸盘的体积电阻率降低的问题。另外,与本文未描述的氧化镁相关的描述可以比照适用于本领域已知的描述。
同时,如上所述,本发明的静电吸盘的室温下的体积电阻率为1.0×1016至1.0×1017Ω·cm,优选为约1.0×1017Ω·cm。另外,本发明的静电吸盘的特征在于漏电流量小于0.08μA,优选为0.03至0.075μA。
同时,氧化铝和烧结助剂可由各种相组成,但粉末相是最优选的,并且粉末颗粒可具有纳米至微米的尺寸。因此,氧化铝和烧结助剂可以是纳米-纳米、纳米-微米、微米-纳米和微米-微米的尺寸。如果氧化铝和烧结助剂中的至少一种具有纳米尺寸,则静电吸盘的响应特性、体积电阻率等可以是优异的。如果氧化铝和烧结助剂都具有纳米尺寸颗粒,则它们可以具有最好的特性。原因在于,纳米尺寸的壳体具有比微米尺寸的壳体更复杂的微观结构,并且在电荷的产生和转移方面更受限制。此外,例如,如果氧化铝和烧结助剂都设定为纳米尺寸,则烧结温度为约1450℃至1550℃,如果氧化铝和烧结助剂都设定为微米尺寸,则烧结温度为约1600℃至1700℃。当在相对低的温度下烧结时,具有缩短工艺所需的时长等优点,并且当烧结纳米粉末时,可以获得均匀的颗粒。因此,优选的是氧化铝和烧结助剂均为纳米尺寸。
接下来,将描述本发明的静电吸盘的制造方法。本发明的静电吸盘的制造方法包括:步骤a)在研磨下将两种以上不同的稀土金属氧化物粉末和溶剂湿混合,然后将其干燥、造粒和热处理,从而制备含有2至5种不同的稀土金属的稀土复合氧化物;b)向制得的稀土复合氧化物中提供氧化铝、烧结助剂、醇和粘合剂,然后将它们混合;c)将步骤b)中的混合物干燥以去除醇组分;d)将经干燥的混合物成型(第一成型)并加工以制成预成型体;e)对预成型体进行脱脂以去除粘合剂组分;和f)将经脱脂的预成型体烧结(第二成型),然后抛光。
步骤a)中使用的稀土金属氧化物和产生的稀土复合氧化物以及步骤b)中的烧结助剂的描述如上所述,溶剂的实例可以是本领域中常规使用的那些。具体地,可例举常用的有机溶剂如异丙醇(IPA)、乙醇、甲醇和DI水。此外,稀土复合氧化物、氧化铝和烧结助剂可由各种相组成,但最优选粉末相。
步骤a)中的研磨可通过常规研磨方法如球磨机、行星式磨机和磨碎机进行。其中,在球磨机中使用的球是氧化锆,并且球的尺寸可以相同或不同,并且考虑到目标颗粒的尺寸,可以适当地设定研磨时长或研磨机的旋转速度。此外,可以进行湿混合12小时以上,可以在100℃以下的温度下进行干燥以使粉末颗粒化,并且可以在1000℃以下的温度下进行热处理5至10小时。另外,步骤a)中产生的稀土复合氧化物必要时可以是通过另外的研磨工序产生的颗粒形式。
在步骤b)中加入的醇(化合物)用于稀土氧化物之间的适当混合,例如乙醇、甲醇、异丙醇等。同样,在步骤b)中加入的粘合剂用于通过提高稀土复合氧化物、氧化铝和氧化镁的粘合强度来制造成型体,并且可以例举为聚乙烯醇(PVA)、聚乙烯醇缩丁醛(PVB)等。同时,在步骤b)中混合的稀土复合氧化物、氧化铝和烧结助剂的混合量可以分别为1重量%以下、90重量%至99重量%以及大于0重量%且10重量%以下。
步骤c)中的干燥可通过本领域已知的方法进行,例如喷雾干燥法和真空干燥法,干燥时间可根据用于该目的的静电吸盘的物理性质以各种方式应用。
步骤d)中的成型是将步骤c)中干燥的混合物的尺寸和形状控制为目标尺寸和形状的第一成型工序,并且可以通过压制成型等来说明。此时,为了制造更紧凑标准的产品,必要时可以另外进行冷等静压(CIP)成型。压制成型优选在室温和一般气氛下进行,但不限于此,并且成型过程中的气氛应当不影响混合物的成型。另外,在进行步骤d)中的成型工序之后,可以通过使用生坯处理(在烧结之前进行)方法等进行处理来制造预成型体。
步骤e)的脱脂是除去具有油性特征的粘合剂和污染物的方法,可以在350℃至600℃的温度下进行60小时的时间。最后,步骤f)的烧结是进一步改善静电吸盘(热压机)的体积电阻率的第二成型工序,并且可以在300巴以下的压力和1400℃至1700℃的温度下在高温加压烧结炉中进行。
如上所述,根据本发明的静电吸盘及其制造方法,库仑型静电吸盘不仅即使在宽温度范围内也具有非常高的体积电阻率,而且可以提供稳定的吸附力。另外,本发明的静电吸盘可以减少从静电吸盘到衬底的漏电流,并且由于在衬底吸附和解吸时的2秒内的快速响应速度等,可以获得良好的吸附响应特性和解吸响应特性,因此可以说本发明是一种与传统静电吸盘相比具有显著效果的独特技术。
在下文中,将通过具体实施例更详细地描述本发明。以下实施例旨在说明本发明,本发明不受以下实施例的限制。
实施例1:使用稀土复合氧化物制造静电吸盘
首先,在球磨机中,将重量比为3:1的氧化钐和氧化铈与乙醇(溶剂)湿混,然后喷雾干燥,在800℃下热处理3小时,以制备钐-铈复合氧化物(SmCeOX)。随后,将0.5重量%的所制备的钐-铈复合氧化物与98.5重量%的氧化铝、1重量%的氧化镁、乙醇和聚乙烯醇缩丁醛混合并干燥,将干燥的混合物压制成型并加工以制备预成型体。将预成型体在500℃的温度下脱脂30小时,最后将脱脂的预成型体在高温加压烧结炉(压力250巴,温度1700℃)中烧结和抛光,以制造库仑型静电吸盘。
实施例2:使用稀土复合氧化物制造静电吸盘
以与上述实施例1相同的方式制造库仑型静电吸盘,不同之处在于,通过以2:1:1的重量比混合氧化钐、氧化铈和氧化铕而不是仅混合氧化钐和氧化铈来制备钐-铈-铕复合氧化物(SmCeEuOX)。
实施例3:使用稀土复合氧化物制造静电吸盘
以与上述实施例1相同的方式制造库仑型静电吸盘,不同之处在于,通过以2:1:1:1.5:1的重量比混合氧化钐、氧化铈、氧化铕、氧化钆和氧化镧而不是仅混合氧化钐和氧化铈来制备钐-铈-铕-钆-镧复合氧化物(SmCeEuGdLaOX)。
比较例1:制造不含稀土金属氧化物的静电吸盘
制造仅含有氧化铝和二氧化钛(TiO2)的常规库仑型静电吸盘。
比较例2:制造不含氧化镁的静电吸盘
以与上述实施例1相同的方式制造库仑型静电吸盘,不同之处在于,使用二氧化钛代替氧化镁。
比较例3:制造不含稀土金属氧化物的静电吸盘
制造仅含有氧化铝和氧化镁的常规库仑型静电吸盘。
比较例4:制造不含氧化镁的静电吸盘
以与上述实施例1相同的方式制造库仑型静电吸盘,不同之处在于,使用氧化钇(Y2O3)代替氧化镁。
比较例5:制造不含稀土金属氧化物和氧化镁的静电吸盘
用氧化钇(Y2O3)代替稀土复合氧化物和氧化镁制备库仑型静电吸盘。
比较例6:仅使用氧化铝制造静电吸盘
仅使用氧化铝制造库仑型静电吸盘,而不使用稀土复合氧化物和氧化镁。
实验例1:静电吸盘的衬底吸附和解吸响应特性的评价
将硅衬底(半导体晶片)吸附到由实施例1至3和比较例1至6制备的每个静电吸盘(各组成示于下表1中)并随后将其解吸的过程重复五次,从而评价衬底的吸附和解吸响应特性,结果示于下表2中。同时,为了评价衬底的吸附和解吸响应特性,使用施加ESC电压的电源(ESC 3D,COMDEL公司),并且在施加1000V的电压之后,探查Si晶片在ESC上的吸附和解吸的时长。
表1
Al<sub>2</sub>O<sub>3</sub> | MgO | Y<sub>2</sub>O<sub>3</sub> | TiO<sub>2</sub> | 稀土复合氧化物 | |
实施例1 | 98.5 | 1 | 0 | 0 | 0.5 |
实施例2 | 98.5 | 1 | 0 | 0 | 0.5 |
实施例3 | 98.9 | 1 | 0 | 0 | 0.1 |
比较例1 | 99 | 0 | 0 | 1 | 0 |
比较例2 | 98.5 | 0 | 0 | 1 | 0.5 |
比较例3 | 99 | 1 | 0 | 0 | 0 |
比较例4 | 97.9 | 0 | 2 | 0 | 0.1 |
比较例5 | 98 | 0 | 2 | 0 | 0 |
比较例6 | 100 | 0 | 0 | 0 | 0 |
(单位:重量%)
表2
图1是比对本发明的一个实施例的静电吸盘(Al2O3+MgO+稀土复合氧化物,实施例1)的衬底吸附和解吸时长与比较例的静电吸盘(Al2O3+MgO,比较例3)的衬底吸附和解吸时长的图表。从表2和图1中可以看出,对于不包含氧化铝、氧化镁或稀土复合氧化物的比较例1至6的静电吸盘,证实了在初始电压施加之后的稳定化时长和在去除电压之后的稳定化时长为约5至10秒,而本发明的静电吸盘的电压施加和去除之后的稳定化时长在2秒内。这是由于通过使用稀土复合氧化物以及特定含量的氧化铝、氧化镁和稀土复合氧化物,衬底的夹持(chucking)时间和脱离(de-chucking)时间快速稳定化。
实验例2:静电吸盘的漏电流量的评价
使用DMM-4020万用表(Tektronix Company,USA)测量实施例1至3和比较例1至6制备的硅衬底吸附到每个静电卡盘上并随后供应电力后的漏电流量,结果如下表3所示。下面将更详细地描述上述测量漏电流量的方法。首先,在室温下将陶瓷圆盘安装在设备上,然后在其上放置Si晶片,然后使用电源设备将1500V的电压施加到氧化铝圆盘上,以施加实验例1中使用的ESC电压,最后,使用DMM-4020万用表设备测量施加到硅晶片两端的漏电流。此时,通过在施加1500V电压后10秒测量电流值来进行测量。
表3
漏电流量(单位:μA) | |
实施例1 | 0.065 |
实施例2 | 0.061 |
实施例3 | 0.072 |
比较例1 | 1.452 |
比较例2 | 1.523 |
比较例3 | 0.785 |
比较例4 | 0.095 |
比较例5 | 0.522 |
比较例6 | 0.688 |
从表3可以看出,在不包含氧化铝、氧化镁或稀土复合氧化物的比较例1至6的静电吸盘的情况中,漏电流为约0.09至1.5μA,而本发明的静电吸盘的漏电流量仅为0.06至0.07μA。漏电流的量越大,衬底可能受到的影响越大或者工艺可能受到的影响越大。因此,对于ESC或加热器,更好的是工艺中的漏电流量尽可能小。因此,通过上述结果,可以确认本发明的优点。
实验例3:静电吸盘的体积电阻率的评价
当将500V/mm的电压施加到由实施例1至3和比较例1至6制造的每个静电吸盘后经过1分钟时,通过测量电流(在真空气氛和室温下测量)计算体积电阻率,结果示于下表4中。
表4
如表4所示,在室温和300℃下,本发明的使用稀土复合氧化物的实施例1至3的静电吸盘的所有体积电阻率显示出与比较例相似的值。由此,发现即使在静电吸盘中包含稀土复合氧化物,由于体积电阻率既不降低也不增加,本发明的静电吸盘的体积电阻率几乎等于现有的具有优异体积电阻率的库仑型静电吸盘的体积电阻率。换言之,即使本发明的静电吸盘与现有的静电卡盘相比具有相似的体积电阻率,这也意味着衬底吸附和解吸响应特性以及漏电流量得到了改善。
Claims (6)
1.一种静电吸盘,所述静电吸盘是烧结体,在所述烧结体中浸有电极以通过静电力固定半导体晶片,并且
所述静电吸盘包括:氧化铝;作为烧结助剂的氧化镁(MgO);和包含3至5种不同的稀土金属的稀土复合氧化物,并且
所述氧化铝的含量基于所述烧结体的总重量为90重量%至99重量%,并且
所述稀土复合氧化物的含量基于所述烧结体的总重量为大于0重量%且1重量%以下,并且
所述静电吸盘具有2秒以下的半导体晶片的吸附和解吸响应特性,并且室温下的体积电阻率为1.0×1016Ω·cm至1.0×1017Ω·cm,并且
所述稀土复合氧化物选自由以下物质组成的组:包含三种不同的稀土金属的复合氧化物,其选自由钐-铈-铕复合氧化物(SmCeEuOX)、钆-铈-镧复合氧化物(GdCeLaOX)和铕-钆-钐复合氧化物(EuGdSmOX)组成的组;包含四种不同稀土金属的复合氧化物,其是钐-铈-钆-铕复合氧化物(SmCeGdEuOX)或钆-钐-铕-镧复合氧化物(GdSmEuLaOX);和包含五种不同稀土金属的复合氧化物,其是钐-铈-铕-钆-镧复合氧化物(SmCeEuGdLaOX),并且
所述稀土复合氧化物包含重量比为1~3.5:0.5~2.5:1的三种稀土金属氧化物、重量比为1.5~3.5:0.5~2.5:1~2.5:1的四种稀土金属氧化物,或重量比为1~3:0.5~1.5:0.5~1.5:1~2:1的五种稀土金属氧化物。
2.如权利要求1所述的静电吸盘,其中,所述静电吸盘的漏电流量小于0.08μA。
3.如权利要求1所述的静电吸盘,其中,所述烧结助剂的含量基于所述烧结体的总重量为大于0重量%且9重量%以下。
4.一种制造权利要求1至3中任一项所述的静电吸盘的方法,其包括以下步骤:
a)在研磨下将三种以上不同的稀土金属氧化物粉末和溶剂湿混合,然后将其干燥、造粒和热处理,从而制备含有3至5种不同的稀土金属的稀土复合氧化物;
b)向制得的稀土复合氧化物中提供氧化铝、烧结助剂、醇和粘合剂,然后将它们混合;
c)将步骤b)中的混合物干燥以去除醇组分;
d)将经干燥的混合物成型并加工以制成预成型体;
e)对所述预成型体进行脱脂以去除粘合剂组分;和
f)将经脱脂的预成型体烧结,然后抛光。
5.如权利要求4所述的制造静电吸盘的方法,其中,所述粘合剂为聚乙烯醇(PVA)或聚乙烯醇缩丁醛(PVB)。
6.如权利要求4所述的制造静电吸盘的方法,其中,所述稀土复合氧化物、所述氧化铝和所述烧结助剂为粉末相。
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EP3792964A1 (en) | 2021-03-17 |
JP2021521653A (ja) | 2021-08-26 |
WO2020096267A1 (ko) | 2020-05-14 |
US11251061B2 (en) | 2022-02-15 |
EP3792964A4 (en) | 2021-08-18 |
US20210249260A1 (en) | 2021-08-12 |
JP6901642B1 (ja) | 2021-07-14 |
KR101965895B1 (ko) | 2019-04-04 |
CN112219273A (zh) | 2021-01-12 |
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