JP6901642B1 - 静電チャック及びその製造方法 - Google Patents
静電チャック及びその製造方法 Download PDFInfo
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- JP6901642B1 JP6901642B1 JP2020568788A JP2020568788A JP6901642B1 JP 6901642 B1 JP6901642 B1 JP 6901642B1 JP 2020568788 A JP2020568788 A JP 2020568788A JP 2020568788 A JP2020568788 A JP 2020568788A JP 6901642 B1 JP6901642 B1 JP 6901642B1
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- Prior art keywords
- rare earth
- composite oxide
- electrostatic chuck
- samarium
- oxide
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002131 composite material Substances 0.000 claims abstract description 76
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 63
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 63
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000005245 sintering Methods 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000001179 sorption measurement Methods 0.000 claims abstract description 20
- 230000004044 response Effects 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000003795 desorption Methods 0.000 claims abstract description 12
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 29
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 21
- 239000000395 magnesium oxide Substances 0.000 claims description 21
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000465 moulding Methods 0.000 claims description 16
- 239000011230 binding agent Substances 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 8
- 238000003801 milling Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052772 Samarium Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 4
- 239000011363 dried mixture Substances 0.000 claims description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 4
- MAMCHKZYNGWYAS-UHFFFAOYSA-N [Sm].[Ce] Chemical compound [Sm].[Ce] MAMCHKZYNGWYAS-UHFFFAOYSA-N 0.000 claims description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005238 degreasing Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052773 Promethium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- IZCUOLNYELHOEC-UHFFFAOYSA-N [Eu].[Ce] Chemical compound [Eu].[Ce] IZCUOLNYELHOEC-UHFFFAOYSA-N 0.000 claims description 2
- OVGLRMYXYZUWSK-UHFFFAOYSA-N [Eu].[Sm].[Ce] Chemical compound [Eu].[Sm].[Ce] OVGLRMYXYZUWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 2
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 claims description 2
- KZUHZYQKJUMOKI-UHFFFAOYSA-N samarium Chemical compound [Sm].[Sm].[Sm] KZUHZYQKJUMOKI-UHFFFAOYSA-N 0.000 claims 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims 1
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- 229910052765 Lutetium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- DFRLLAPINYLOOR-UHFFFAOYSA-N [Sm][Eu][Sm] Chemical compound [Sm][Eu][Sm] DFRLLAPINYLOOR-UHFFFAOYSA-N 0.000 claims 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910001954 samarium oxide Inorganic materials 0.000 description 5
- 229940075630 samarium oxide Drugs 0.000 description 5
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 238000002336 sorption--desorption measurement Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- -1 (SmCeO X ) Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- 229910001940 europium oxide Inorganic materials 0.000 description 2
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ZZPXFOQZGDDSMP-UHFFFAOYSA-N [Eu].[Gd].[Sm].[Ce].[La] Chemical compound [Eu].[Gd].[Sm].[Ce].[La] ZZPXFOQZGDDSMP-UHFFFAOYSA-N 0.000 description 1
- WMOHXRDWCVHXGS-UHFFFAOYSA-N [La].[Ce] Chemical compound [La].[Ce] WMOHXRDWCVHXGS-UHFFFAOYSA-N 0.000 description 1
- NLBBKOXMTCLASE-UHFFFAOYSA-N [La].[Eu].[Sm].[Gd] Chemical compound [La].[Eu].[Sm].[Gd] NLBBKOXMTCLASE-UHFFFAOYSA-N 0.000 description 1
- TVYNCCPJWWBXRT-UHFFFAOYSA-N [Sm].[Gd] Chemical compound [Sm].[Gd] TVYNCCPJWWBXRT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
まず、ボールミルの存在下で3:1の重量比のサマリウム酸化物及びセリウム酸化物とエタノール(溶媒)を湿式混合した後、噴霧乾燥方法で乾燥させ、800℃の温度下で3時間熱処理して、サマリウム−セリウム複合酸化物(SmCeOX)を製造した。続いて、前記製造されたサマリウム−セリウム複合酸化物0.5重量%とアルミナ98.5重量%、酸化マグネシウム1重量%、エタノール及びポリビニルブチラルを混合及び乾燥させ、前記乾燥された混合物をプレス成形及び加工して予備成形体を製造し、次いで500℃の温度で30時間脱脂させ、最後に、脱脂された予備成形体を高温加圧焼結炉(250barの圧力、1,700℃の温度)で焼結させ、研磨して、クーロン型タイプの静電チャックを製造した。
サマリウム酸化物とセリウム酸化物のみを混合する代わりに、サマリウム酸化物、セリウム酸化物及びユウロピウム酸化物を2:1:1の重量比で混合してサマリウム−セリウム−ユウロピウム複合酸化物(SmCeEuOX)を製造したことを除いては、前記実施例1と同様に行い、クーロン型タイプの静電チャックを製造した。
サマリウム酸化物とセリウム酸化物のみを混合する代わりに、サマリウム酸化物、セリウム酸化物、ユウロピウム酸化物、ガドリニウム酸化物及びランタン酸化物を2:1:1:1.5:1の重量比で混合してサマリウム−セリウム−ユウロピウム−ガドリニウム−ランタン複合酸化物(SmCeEuGdLaOX)を製造したことを除いては、前記実施例1と同様に行い、クーロン型タイプの静電チャックを製造した。
アルミナと二酸化チタン(TiO2)のみを含む通常のクーロン型静電チャックを製造した。
酸化マグネシウムの代わりに二酸化チタンを用いたことを除いては、前記実施例1と同様に行い、クーロン型タイプの静電チャックを製造した。
アルミナと酸化マグネシウムのみを含む通常のクーロン型静電チャックを製造した。
酸化マグネシウムの代わりにニットリア(Y2O3)を用いたことを除いては、前記実施例1と同様に行い、クーロン型タイプの静電チャックを製造した。
希土類複合酸化物と酸化マグネシウムの代わりにイットリア(Y2O3)を用いて、クーロン型タイプの静電チャックを製造した。
希土類複合酸化物と酸化マグネシウムを排除し、アルミナのみを用いて、クーロン型タイプの静電チャックを製造した。
前記実施例1〜3、比較例1〜6から製造されたそれぞれの静電チャック(下記表1に各組成を示す)にシリコン基板(半導体ウエハ)を吸着させた後、脱着する過程を5回繰り返して基板の吸脱着応答特性を評価し、その結果を下記表2に示した。一方、基板の吸着及び脱着応答特性の評価には、ESC電圧印加用パワーソース(ESC 3D、COMDEL社)が用いられ、1,000Vの電圧を印加した後、ESC上Siウェハの吸脱着時間を調査した。
前記実施例1〜3、比較例1〜6から製造されたそれぞれの静電チャックにシリコン基板を吸着させ、電力を供給した後、DMM−4020マルチメータ装備(Tektronix社、米国)を利用して漏れる電流の量を測定し、その結果を下記表3に示した。前記の漏れ電流量を測定する方法をより具体的に説明すると、まず、常温でセラミックpuckを当該装備に設置した後、Si waferを上に位置させ、次いで、前記実験例1で用いられたESC電圧印加用パワーソース装備を利用してアルミナpuckに1,500Vを印加し、最後に、DMM−4020マルチメータ装備と利用して、シリコンウエハの両端にかかる漏れ電流を測定し、このとき、測定は1,500V印加後10秒後の電流値を測定したものである。
前記実施例1〜3、比較例1〜6から製造されたそれぞれの静電チャックに500V/mmの電圧を印加した後、1分が経過した時点で電流を測定(真空雰囲気及び室温下で測定)して体積抵抗率を算出し、その結果を下記表4に示した。
Claims (9)
- 内部に電極が含浸されて静電気力により半導体ウェハを固定させる焼結体であって、
アルミナ;焼結助剤としての酸化マグネシウム(MgO);及び2〜5個の互いに異なる希土類金属を含む希土類複合酸化物;を含み、
前記希土類複合酸化物の含有量は、焼結体全体の重量に対して0超過1重量%以下であり、
半導体ウェハの吸着及び脱着応答特性が2秒以内であり、常温での体積抵抗率が1.0E+16〜1.0E+17Ω・cmであることを特徴とする、静電チャック。 - 前記静電チャックの漏れ電流量は、0.08μA未満であることを特徴とする、請求項1に記載の静電チャック。
- 前記希土類金属はスカンジウム(Sc)、イットリウム(Y)、ランタン(La)、セリウム(Ce)、プラセオジム(Pr)、ネオジム(Nd)、プロメチウム(Pm)、サマリウム(Sm)、ユウロピウム(Eu)、ガドリニウム(Gd)、テルビウム(Tb)、ジスプロシウム(Dy)、ホルミウム(Ho)、エルビウム(Er)、ツリウム(Tm)、イッテルビウム(Yb)及びルテチウム(Lu)からなる群より選択されることを特徴とする、請求項1に記載の静電チャック。
- 前記希土類複合酸化物は、ユウロピウム−ガドリニウム複合酸化物(EuGdOX)、サマリウム−ガドリニウム複合酸化物(SmGdOX)、セリウム−ユウロピウム複合酸化物(CeEuOX)、サマリウム−セリウム複合酸化物(SmCeOX)、ガドリニウム−サマリウム複合酸化物(GdSmOX)及びランタン−セリウム複合酸化物(LaCeOX)からなる群より選択される2種の互いに異なる希土類金属を含む複合酸化物;サマリウム−セリウム−ユウロピウム複合酸化物(SmCeEuOX)、ガドリニウム−セリウム−ランタン複合酸化物(GdCeLaOX)及びユウロピウム−ガドリニウム−サマリウム複合酸化物(EuGdSmOX)からなる群より選択される3種の互いに異なる希土類金属を含む複合酸化物;サマリウム−セリウム−ガドリニウム−ユウロピウム複合酸化物(SmCeGdEuOX)またはガドリニウム−サマリウム−ユウロピウム−ランタン複合酸化物(GdSmEuLaOX)である4種の互いに異なる希土類金属を含む複合酸化物;及びサマリウム−セリウム−ユウロピウム−ガドリニウム−ランタン複合酸化物(SmCeEuGdLaOX)である5種の互いに異なる希土類金属を含む複合酸化物;からなる群より選択されることを特徴とする、請求項1に記載の静電チャック。
- 前記アルミナの含有量は焼結体全体の重量に対して90〜99重量%であり、前記焼結助剤の含有量は焼結体全体の重量に対して0超過9重量%以下であることを特徴とする、請求項1に記載の静電チャック。
- 前記希土類複合酸化物は、2種の希土類金属酸化物を2.5〜3.5:1の重量比で含むか、3種の希土類金属酸化物を1〜3.5:0.5〜2.5:1の重量比で含むか、4種の希土類金属酸化物を1.5〜3.5:0.5〜2.5:1〜2.5:1の重量比で含むか、5種の希土類金属酸化物を1〜3:0.5〜1.5:0.5〜1.5:1〜2:1の重量比で含むことを特徴とする、請求項1に記載の静電チャック。
- a)ミーリング下で2種以上の互いに異なる希土類金属酸化物パウダー及び溶媒を湿式混合した後、乾燥させて顆粒化し、熱処理して、2〜5個の互いに異なる希土類金属を含む希土類複合酸化物を製造する段階;
b)前記製造された希土類複合酸化物にアルミナ、焼結助剤、アルコール及びバインダーを供給した後、混合する段階;
c)前記b)段階の混合物を乾燥させてアルコール成分を除去する段階;
d)前記乾燥された混合物を成形及び加工して予備成形体を製造する段階;
e)前記予備成形体を脱脂してバインダー成分を除去する段階;及び
f)前記脱脂された予備成形体を焼結した後、研磨する段階;を含む、静電チャックの製造方法。 - 前記バインダーは、ポリビニルアルコール(PVA)またはポリビニルブチラル(PVB)であることを特徴とする、請求項7に記載の静電チャックの製造方法。
- 前記希土類複合酸化物、アルミナ及び焼結助剤はパウダー性状であることを特徴とする、請求項7に記載の静電チャックの製造方法。
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KR20170127636A (ko) | 2016-05-12 | 2017-11-22 | 한국세라믹기술원 | 정전척용 세라믹 복합소재의 제조방법 |
JP6495536B2 (ja) | 2016-07-20 | 2019-04-03 | 日本特殊陶業株式会社 | 半導体製造装置用部品の製造方法、および、半導体製造装置用部品 |
KR101769608B1 (ko) * | 2016-10-05 | 2017-08-21 | 주식회사 케이에스엠컴포넌트 | 정전척의 제조 방법 |
CN108346611B (zh) | 2017-01-24 | 2021-05-18 | 中微半导体设备(上海)股份有限公司 | 静电吸盘及其制作方法与等离子体处理装置 |
KR20180136671A (ko) | 2017-06-15 | 2018-12-26 | 주식회사 와이즈박스 | 영상분석 기법을 이용한 지진감시 대응 안내시스템 |
KR101797232B1 (ko) | 2017-07-10 | 2017-11-13 | 주식회사 케이에스엠컴포넌트 | 정전척 |
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- 2019-10-31 JP JP2020568788A patent/JP6901642B1/ja active Active
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- 2019-10-31 WO PCT/KR2019/014528 patent/WO2020096267A1/ko unknown
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US11251061B2 (en) | 2022-02-15 |
WO2020096267A1 (ko) | 2020-05-14 |
EP3792964A4 (en) | 2021-08-18 |
CN112219273B (zh) | 2022-01-21 |
US20210249260A1 (en) | 2021-08-12 |
JP2021521653A (ja) | 2021-08-26 |
CN112219273A (zh) | 2021-01-12 |
KR101965895B1 (ko) | 2019-04-04 |
EP3792964A1 (en) | 2021-03-17 |
EP3792964B1 (en) | 2022-08-03 |
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