JP2019186541A - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
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- JP2019186541A JP2019186541A JP2019062296A JP2019062296A JP2019186541A JP 2019186541 A JP2019186541 A JP 2019186541A JP 2019062296 A JP2019062296 A JP 2019062296A JP 2019062296 A JP2019062296 A JP 2019062296A JP 2019186541 A JP2019186541 A JP 2019186541A
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- 239000000758 substrate Substances 0.000 title claims abstract description 217
- 238000003672 processing method Methods 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 34
- 239000000126 substance Substances 0.000 claims abstract description 28
- 230000000903 blocking effect Effects 0.000 claims abstract description 19
- 239000000376 reactant Substances 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims description 470
- 239000010408 film Substances 0.000 claims description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 239000001301 oxygen Substances 0.000 claims description 39
- 229910052760 oxygen Inorganic materials 0.000 claims description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 38
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 30
- 238000010926 purge Methods 0.000 claims description 21
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 20
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 18
- 229910001882 dioxygen Inorganic materials 0.000 claims description 18
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 16
- 239000001272 nitrous oxide Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 8
- 230000009257 reactivity Effects 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 33
- 150000003254 radicals Chemical class 0.000 description 30
- 238000005192 partition Methods 0.000 description 19
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- 239000012495 reaction gas Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
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- 239000000654 additive Substances 0.000 description 3
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- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 oxygen radicals Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
前記基板処理方法の一例によれば、前記第3ガスが前記追加ガス流入口を介して供給され、基板エッジの流量が増加し、それにより、基板中心近辺のラジカル密度が上昇することができる。
前記基板処理方法の他の例によれば、前記第3ガスは、窒素成分を含んでもよい。
前記第3ガスは、亜酸化窒素ガス及び窒素ガスのうち少なくとも一つを含んでもよい。
前記基板処理方法の他の例によれば、前記第2ガスは、酸素成分を含み、前記第3ガスは、窒素成分を含み、前記薄膜は、100℃以下の温度条件で形成された酸化膜でもある。
前記基板処理方法の他の例によれば、前記第2ガスは、酸素であり、前記第3ガスは、亜酸化窒素であり、前記プラズマ雰囲気において、前記酸素ガスと前記亜酸化窒素ガスとの流量比は、1:0.625ないし1:1.25でもある。
前記基板処理方法の他の例によれば、前記第2ガスは、酸素であり、前記第3ガスは、窒素であり、前記プラズマ雰囲気において、前記酸素ガスと前記窒素ガスの流量費は1:0.625ないし1:1.25でもある。
前記基板処理方法の他の例によれば、前記プラズマ雰囲気下において、前記パターン構造物の損傷が生じうる。
前記パターン構造物の損傷は、前記追加ガス流入口を介して供給される前記第3ガスによって変化することができる。
前記基板処理方法の他の例によれば、前記パターン構造物はスピンオンハードマスク(SOH)を含んでもよい。
前記基板処理方法の他の例によれば、前記基板処理方法は、前記パターン構造物上に形成された前記薄膜を利用して遂行されるダブルパターニング工程またはクワドループルパターニング工程をさらに含んでもよい。
前記基板処理方法の他の例によれば、前記プラズマ雰囲気下で、前記第2ガスは、イオン化され、前記第3ガスは、イオン化されない。
前記基板処理方法の他の例によれば、前記第1ガスは、第1温度で、前記第2ガスとは反応し、前記第1ガスは、前記第1温度で、前記第3ガスとは反応しない。
前記基板処理方法の他の例によれば、前記第3ガスは、前記第1ガス及び前記第2ガスのイオン化エネルギーより高いイオン化エネルギーを有することができる。
本発明の技術的思想による実施形態の他の側面によれば、基板処理方法は、酸素と反応するパターン構造物が形成された基板上に、シリコン含有ガスを供給する段階と、前記シリコン含有ガスをパージする段階と、酸素含有ガス及び窒素含有ガスを100℃以下のプラズマ雰囲気下で供給し、前記パターン構造物上にシリコン酸化膜を形成する段階と、前記酸素含有ガスをパージする段階と、を含み、少なくとも前記シリコン酸化膜を形成する段階の間、前記酸素含有ガスは、ガス供給ユニットの少なくとも中心ガス流入口を介して供給され、前記窒素含有ガスは、前記ガス供給ユニットの前記中心ガス流入口と離隔された追加ガス流入口を介しても供給される。
前記基板処理方法の一例によれば、前記酸素と反応するパターン構造物は、スピンオンハードマスクであり、前記酸素含有ガスは、酸素であり、前記窒素含有ガスは、亜酸化窒素であり、前記プラズマ雰囲気において、前記酸素ガスと前記亜酸化窒素ガスとの流量比は、1:0.625ないし1:1.25でもある。
前記基板処理方法の他の例によれば、前記シリコン酸化膜を形成する段階の間、前記基板の前記パターン構造物上に吸着されたシリコン含有ガスは、酸素含有ガスとは反応し、窒素含有ガスとは反応しない。
前記基板処理方法の他の例によれば、前記窒素含有ガスが前記追加ガス流入口を介して供給され、基板エッジの流量が増加し、前記基板エッジの流量増加により、基板エッジ部分でのパターン構造物と反応するラジカル密度は低下し、前記基板エッジの流量増加により、基板中心近辺でのパターン構造物と反応するラジカル密度は上昇し、結果として、基板エッジ部分でのパターン構造物の損傷と、基板中心近辺でのパターン構造物の損傷とが均一にもなる。
本発明の技術的思想による実施形態のさらに他の側面によれば、基板処理方法は、反応物質と反応するパターン構造物が形成された基板上に、ソース物質を供給する段階と、プラズマ雰囲気下で、供給ユニットの少なくとも中心流入口を介して、前記反応物質を供給する段階と、を含み、前記反応物質を供給する段階の間、前記反応物質と異なる遮断物質が、前記供給ユニットの前記中心ガス流入口と離隔された追加ガス流入口を介して供給され、前記遮断物質により、基板エッジの流量が増加し、それにより、基板中心近辺の反応物質のラジカル密度が上昇することができる。
前記基板処理方法の一例によれば、前記遮断物質は、非活性ガスのイオン化エネルギーより高いイオン化エネルギーを有することができる。
図2を参照すれば、まず、パターン構造物が形成された基板上に、第1ガスが供給される(S50)。例えば、該パターン構造物は、酸素と反応する物質を含んでもよく、前記反応により、該パターン構造物の一部が除去される。他の実施形態において、該パターン構造物は、酸素以外の物質(例えば、窒素)と反応する物質を含んでもよい。例えば、該パターン構造物は、スピンオンハードマスク(SOH)を含んでもよい。
隔壁110内に設けられ、真空ポンプに連結された排気通路140は、隔壁110内の反応空間160の残留ガスを真空排出させるのにも利用される。
2 反応器壁
3,200 サセプタ
4 第1ガス流入口
5,6,7 第2ガス流入口
8 第2ガス供給ポート
9 バックプレート
10,125 ガスチャネル
11 シャワーヘッド
12,170 ガスフローチャネル
13,160 反応空間
14 排気チャネル
15 排気ホール
16,140 排気通路
18 排気ポート
110 隔壁
120 ガス供給ユニット
125 ガスチャネル
127 ガス供給プレート
130 RFロッド
150 ガス供給チャネル
180 第1貫通ホール
185 第2貫通ホール
190 バッファ空間
210 サセプタ支持部
220 微細孔
240 第1蓋
250 第1蓋
Claims (20)
- パターン構造物が形成された基板上に、第1ガスを供給する段階と、
前記第1ガスをパージする段階と、
前記第1ガスと反応性を有する第2ガス及び第3ガスを、プラズマ雰囲気下で供給し、前記パターン構造物上に薄膜を形成する段階と、
前記第2ガスをパージする段階と、を含み、
前記薄膜を形成する段階の間、前記第2ガスは、ガス供給ユニットの少なくとも中心ガス流入口を介して供給され、前記第3ガスは、前記ガス供給ユニットの前記中心ガス流入口と離隔された追加ガス流入口を介して供給され、
前記第3ガスは、前記第1ガス及び前記第2ガスと異なるガスであり、非活性ガスのイオン化エネルギーより高いイオン化エネルギーを有する基板処理方法。 - 前記第3ガスが前記追加ガス流入口を介して供給され、基板エッジの流量が増加し、それにより、基板中心近辺のラジカル密度が上昇することを特徴とする請求項1に記載の基板処理方法。
- 前記第3ガスは、窒素成分を含むことを特徴とする請求項2に記載の基板処理方法。
- 前記第3ガスは、亜酸化窒素ガス及び窒素ガスのうち少なくとも一つを含むことを特徴とする請求項3に記載の基板処理方法。
- 前記第2ガスは、酸素成分を含み、前記第3ガスは、窒素成分を含み、
前記薄膜は、100℃以下の温度条件で形成された酸化膜であることを特徴とする請求項1に記載の基板処理方法。 - 前記第2ガスは、酸素であり、前記第3ガスは、亜酸化窒素であり、
前記プラズマ雰囲気において、前記酸素ガスと前記亜酸化窒素ガスとの流量比は、1:0.625ないし1:1.25であることを特徴とする請求項5に記載の基板処理方法。 - 前記第2ガスは、酸素であり、前記第3ガスは、窒素であり、
前記プラズマ雰囲気において、前記酸素ガスと前記窒素ガスとの流量比は、1:0.625ないし1:1.25であることを特徴とする請求項5に記載の基板処理方法。 - 前記プラズマ雰囲気下において、前記パターン構造物の損傷が生じることを特徴とする請求項1に記載の基板処理方法。
- 前記パターン構造物の損傷は、前記追加ガス流入口を介して供給される前記第3ガスによって変化することを特徴とする請求項8に記載の基板処理方法。
- 前記パターン構造物は、スピンオンハードマスク(SOH)を含むことを特徴とする請求項8に記載の基板処理方法。
- 前記パターン構造物上に形成された前記薄膜を利用して遂行されるダブルパターニング工程またはクワドループルパターニング工程をさらに含むことを特徴とする請求項1に記載の基板処理方法。
- 前記プラズマ雰囲気下で、前記第2ガスは、イオン化され、前記第3ガスは、イオン化されないことを特徴とする請求項1に記載の基板処理方法。
- 前記第1ガスは、第1温度で、前記第2ガスとは反応し、
前記第1ガスは、前記第1温度で、前記第3ガスとは反応しないことを特徴とする請求項1に記載の基板処理方法。 - 前記第3ガスは、前記第1ガス及び前記第2ガスのイオン化エネルギーより高いイオン化エネルギーを有することを特徴とする請求項1に記載の基板処理方法。
- 酸素と反応するパターン構造物が形成された基板上に、シリコン含有ガスを供給する段階と、
前記シリコン含有ガスをパージする段階と、
酸素含有ガス及び窒素含有ガスを100℃以下のプラズマ雰囲気下で供給し、前記パターン構造物上にシリコン酸化膜を形成する段階と、
前記酸素含有ガスをパージする段階と、を含み、
少なくとも前記シリコン酸化膜を形成する段階の間、前記酸素含有ガスは、ガス供給ユニットの少なくとも中心ガス流入口を介して供給され、前記窒素含有ガスは、前記ガス供給ユニットの前記中心ガス流入口と離隔された追加ガス流入口を介して供給される基板処理方法。 - 前記酸素と反応するパターン構造物は、スピンオンハードマスクであり、
前記酸素含有ガスは、酸素であり、前記窒素含有ガスは、亜酸化窒素であり、
前記プラズマ雰囲気において、前記酸素ガスと前記亜酸化窒素ガスとの流量比は、1:0.625ないし1:1.25であることを特徴とする請求項15に記載の基板処理方法。 - 前記シリコン酸化膜を形成する段階の間、前記基板の前記パターン構造物上に吸着されたシリコン含有ガスは、酸素含有ガスとは反応し、窒素含有ガスとは反応しないことを特徴とする請求項15に記載の基板処理方法。
- 前記窒素含有ガスが前記追加ガス流入口を介して供給され、基板エッジの流量が増加し、
前記基板エッジの流量増加により、基板エッジ部分でのパターン構造物と反応するラジカル密度は低下し、
前記基板エッジの流量増加により、基板中心近辺でのパターン構造物と反応するラジカル密度は上昇し、
結果として、基板エッジ部分でのパターン構造物の損傷と、基板中心近辺でのパターン構造物の損傷とが均一になることを特徴とする請求項15に記載の基板処理方法。 - 反応物質と反応するパターン構造物が形成された基板上に、ソース物質を供給する段階と、
プラズマ雰囲気下で、供給ユニットの少なくとも中心流入口を介して、前記反応物質を供給する段階と、を含み、
前記反応物質を供給する段階の間、前記反応物質と異なる遮断物質が、前記供給ユニットの前記中心ガス流入口と離隔された追加ガス流入口を介して供給され、
前記遮断物質により、基板エッジの流量が増加し、それにより、基板中心近辺の反応物質のラジカル密度が上昇する基板処理方法。 - 前記遮断物質は、非活性ガスのイオン化エネルギーより高いイオン化エネルギーを有することを特徴とする請求項19に記載の基板処理方法。
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US10867786B2 (en) | 2020-12-15 |
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KR20190114682A (ko) | 2019-10-10 |
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