JP5404772B2 - ツイン重合によって得られるLow−k誘電体 - Google Patents
ツイン重合によって得られるLow−k誘電体 Download PDFInfo
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- JP5404772B2 JP5404772B2 JP2011506680A JP2011506680A JP5404772B2 JP 5404772 B2 JP5404772 B2 JP 5404772B2 JP 2011506680 A JP2011506680 A JP 2011506680A JP 2011506680 A JP2011506680 A JP 2011506680A JP 5404772 B2 JP5404772 B2 JP 5404772B2
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- 0 C*c1c(*)c(*)c(CO)[o]1 Chemical compound C*c1c(*)c(*)c(CO)[o]1 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/441—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from alkenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
Description
−純粋に無機性質である、シリケートをベースとする材料、
−有機ポリマー及び
−無定形炭素。
a)金属又は半金属を有する第一のモノマー、及び
b)第一のモノマーに化学結合によって結合されている第二のモノマー
を有し、その際、該重合は、該ツインモノマーを、該化学結合の切断及び第一のモノマー単位を有する第一のポリマーの形成及び第二のモノマー単位を有する第二のポリマーの形成を伴いながら重合することを含み、且つ、その際、第一及び第二のモノマー単位は共通の機構によって重合する。
Mは、金属又は半金属、好ましくはSi、B、Ti、Zr又はHfであり、
nは、3〜Mの最大原子価Vまでの整数であり、
mは、0〜V−nの整数であり、
R1は、
又は2個の基R1が一緒になって
A1、A2、A3、A4は、それぞれ独立して水素又は直鎖状又は分枝鎖状の、脂肪族炭化水素基、芳香族炭化水素基又は芳香族−脂肪族炭化水素基であり、
R2は、水素又は線状又は分枝鎖状の、脂肪族炭化水素基、芳香族炭化水素基又は芳香族−脂肪族炭化水素基であり、
R3、R4は、それぞれ独立して水素又は1〜6個の炭素原子を有するアルキル基、好ましくはメチル又はHである。
・基R1のいずれも一緒になって環系を形成していないハイブリッドモノマーの場合、カチオン重合により、付加的に更なる低分子量の縮合物、例えば水が形成される。この反応は、従って縮合重合であり、これ以降でツイン重縮合とも称される。
Mは、金属又は半金属、好ましくはSi、Ti、Zr又はHf、より好ましくはSi又はTiであり、
A1、A2、A3は、それぞれ独立して水素又は直鎖状又は分枝鎖状の、脂肪族炭化水素基、芳香族炭化水素基又は芳香族−脂肪族炭化水素基である]のものである。
Mは、金属又は半金属、好ましくはSi、Ti、Zr又はHf、より好ましくはSi又はTiであり、
A1、A2、A3、A4は、それぞれ独立して水素又は直鎖状又は分枝鎖状の、脂肪族炭化水素基、芳香族炭化水素基又は芳香族−脂肪族炭化水素基であり、
R3、R4は、それぞれ独立して水素又は1〜6個の炭素原子を有するアルキル基、好ましくはメチル又はHである]のスピロ化合物である。
a)金属又は半金属を有する第一のモノマー単位、及び
b)化学結合によって第一のモノマー単位に結合されている第二のモノマー単位
を有する少なくとも1つのツインモノマーを有する組成物の使用を提供し、その際、該ツインモノマーは、該化学結合の切断及び第一のモノマー単位を有する第一のポリマー及び第二のモノマー単位を有する第二のポリマーの形成を伴いながら重合可能であり、且つ第一及び第二のモノマー単位は共通の機構によって重合可能である。
a)金属又は半金属を有する第一のモノマー単位、及び化学結合によって第一のモノマー単位に結合されている第二のモノマー単位を有する少なくとも1つのツインモノマーを半導体基板に適用し、且つ
b)この少なくとも1つの有機金属化合物を、該化学結合の切断及び第一のモノマー単位を有する第一のポリマー及び第二のモノマー単位を有する第二のポリマーの形成を伴いながら重合し、且つ、その際、第一及び第二のモノマー単位を同じ機構によって重合する処理によって適用されることができる。
Claims (17)
- 誘電率が3.5又はそれ未満の誘電体層を半導体基板上に製造するための少なくとも1種のツインモノマーを有する組成物の使用であって、
前記ツインモノマーは、
a) 金属又は半金属を有する第一のモノマー単位と、
b) 前記第一のモノマー単位に化学結合によって結合されている第二のモノマー単位と
を有しており、
ここで、前記ツインモノマーは、前記化学結合の切断と、前記第一のモノマー単位を有する第一のポリマーの形成と、前記第二のモノマー単位を有する第二のポリマーの形成とを伴う重合が可能であり、且つ
前記第一及び第二のモノマー単位が共通の機構によって重合可能である、
使用。 - 請求項1に記載の使用であって、
製造工程のバックエンド(BEOL)及び/又はフロントエンド(FEOL)の対象となる半導体装置におけるセクターに誘電体層を製造する際における使用。 - 請求項1又は2に記載の使用であって、
前記の金属又は半金属が、Si、B、Ti、Zr又はHfであり、特にSi又はTiである、
使用。 - 請求項1から3までのいずれか1項記載の使用であって、
前記第一のポリマーはその有機含有量が10質量%未満であり、且つ
前記第二のポリマーはその非有機フラクションが10質量%未満である、
使用。 - 請求項1から4までのいずれか1項記載の使用であって、
前記第一のモノマー単位及び前記第二のモノマー単位が、アニオン的に、カチオン的に又はフリーラジカル的に重合する、
使用。 - 請求項1から5までのいずれか1項記載の使用であって、
前記誘電率が、3.0以下、特に2.5以下である、
使用。 - 請求項1から6までのいずれか1項記載の使用であって、
前記第二のポリマーが、熱的に、酸化的に、又は、熱的に且つ酸化的に、除去される、
使用。 - 請求項8又は9記載の使用であって、
前記の基A 1 、基A 2 、基A 3 及び、存在する場合、基A 4 のうちの少なくとも2個が互いに結ばれており、より好ましくは融合している、
使用。 - 請求項8又は9記載の使用であって、
前記の基A 1 、基A 2 、基A 3 及び、存在する場合、基A 4 のうちの1個以上の炭素原子が、独立して、ヘテロ原子によって、より好ましくはO、S及び/又はNによって置き換えられている、
使用。 - 請求項8から11までのいずれか1項記載の使用であって、
A 1 、A 2 、A 3 及び、存在する場合、A 4 が、それぞれ独立して、1個以上の官能基、特に、ハロゲン、例えばBr又はCl、又は、CN、又は、NR 2 [式中、Rは、特に、H又は脂肪族若しくは芳香族の炭化水素、好ましくはH、メチル、エチル又はフェニルである]である、
使用。 - 請求項8から12までのいずれか1項記載の使用であって、
A 1 及びA 3 が、それぞれHであり、好ましくはA 1 、A 2 、A 3 及び、存在する場合、A 4 がそれぞれHである、
使用。 - 請求項1から15までのいずれか1項記載の使用によって得られた半導体部品。
- 3.5又はそれ未満の誘電率を有する誘電体層を少なくとも1つ有する半導体部品の製造法であって、
a) 金属又は半金属を有する第一のモノマー単位と、前記第一のモノマー単位に化学結合によって結合されている第二のモノマー単位とを有するツインモノマーの少なくとも1種を半導体基板に適用する工程と、
b) 前記の少なくとも1種の有機金属化合物であるツインモノマーの重合であって、前記化学結合の切断と、前記第一のモノマー単位を有する第一のポリマーの形成と、前記第二のモノマー単位を有する第二のポリマーの形成とを伴う重合を行い、ここで、前記の第一及び第二のモノマー単位が同じ機構によって重合し、それにより、前記の少なくとも1つの誘電体層を形成する、
半導体部品の製造法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08155304 | 2008-04-28 | ||
EP08155304.2 | 2008-04-28 | ||
PCT/EP2009/055092 WO2009133082A1 (en) | 2008-04-28 | 2009-04-28 | Low-k dielectrics obtainable by twin polymerization |
Publications (3)
Publication Number | Publication Date |
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JP2011524077A JP2011524077A (ja) | 2011-08-25 |
JP2011524077A5 JP2011524077A5 (ja) | 2012-06-14 |
JP5404772B2 true JP5404772B2 (ja) | 2014-02-05 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011506680A Active JP5404772B2 (ja) | 2008-04-28 | 2009-04-28 | ツイン重合によって得られるLow−k誘電体 |
Country Status (10)
Country | Link |
---|---|
US (1) | US8476368B2 (ja) |
EP (1) | EP2272068B1 (ja) |
JP (1) | JP5404772B2 (ja) |
KR (1) | KR101610978B1 (ja) |
CN (1) | CN102017015B (ja) |
IL (1) | IL208534A (ja) |
MY (1) | MY152799A (ja) |
RU (1) | RU2010148303A (ja) |
TW (1) | TWI491657B (ja) |
WO (1) | WO2009133082A1 (ja) |
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JP2006193629A (ja) * | 2005-01-14 | 2006-07-27 | Yokohama Rubber Co Ltd:The | 硬化性組成物およびその硬化物 |
JP4957037B2 (ja) * | 2006-03-24 | 2012-06-20 | 東ソー株式会社 | 有機シラン化合物、それを含むSi含有膜形成材料、製造方法および用途 |
DE102007063284A1 (de) | 2007-12-27 | 2009-07-02 | Basf Se | Spiroverbindungen |
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Publication number | Publication date |
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US8476368B2 (en) | 2013-07-02 |
RU2010148303A (ru) | 2012-06-10 |
CN102017015B (zh) | 2013-01-16 |
WO2009133082A1 (en) | 2009-11-05 |
KR101610978B1 (ko) | 2016-04-08 |
IL208534A0 (en) | 2010-12-30 |
TW201000532A (en) | 2010-01-01 |
KR20110007215A (ko) | 2011-01-21 |
MY152799A (en) | 2014-11-28 |
JP2011524077A (ja) | 2011-08-25 |
EP2272068B1 (en) | 2018-07-04 |
TWI491657B (zh) | 2015-07-11 |
CN102017015A (zh) | 2011-04-13 |
US20110046314A1 (en) | 2011-02-24 |
EP2272068A1 (en) | 2011-01-12 |
IL208534A (en) | 2013-09-30 |
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