JP2011524077A - ツイン重合によって得られるLow−k誘電体 - Google Patents
ツイン重合によって得られるLow−k誘電体 Download PDFInfo
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- JP2011524077A JP2011524077A JP2011506680A JP2011506680A JP2011524077A JP 2011524077 A JP2011524077 A JP 2011524077A JP 2011506680 A JP2011506680 A JP 2011506680A JP 2011506680 A JP2011506680 A JP 2011506680A JP 2011524077 A JP2011524077 A JP 2011524077A
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- 0 CC(*)(c(c(*)c(*)c(*)c1*2CC2)c1O)O Chemical compound CC(*)(c(c(*)c(*)c(*)c1*2CC2)c1O)O 0.000 description 3
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/441—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from alkenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
Abstract
Description
−純粋に無機性質である、シリケートをベースとする材料、
−有機ポリマー及び
−無定形炭素。
a)金属又は半金属を有する第一のモノマー、及び
b)第一のモノマーに化学結合によって結合されている第二のモノマー
を有し、その際、該重合は、該ツインモノマーを、該化学結合の切断及び第一のモノマー単位を有する第一のポリマーの形成及び第二のモノマー単位を有する第二のポリマーの形成を伴いながら重合することを含み、且つ、その際、第一及び第二のモノマー単位は共通の機構によって重合する。
Mは、金属又は半金属、好ましくはSi、B、Ti、Zr又はHfであり、
nは、3〜Mの最大原子価Vまでの整数であり、
mは、0〜V−nの整数であり、
R1は、
又は2個の基R1が一緒になって
A1、A2、A3、A4は、それぞれ独立して水素又は直鎖状又は分枝鎖状の、脂肪族炭化水素基、芳香族炭化水素基又は芳香族−脂肪族炭化水素基であり、
R2は、水素又は線状又は分枝鎖状の、脂肪族炭化水素基、芳香族炭化水素基又は芳香族−脂肪族炭化水素基であり、
R3、R4は、それぞれ独立して水素又は1〜6個の炭素原子を有するアルキル基、好ましくはメチル又はHである。
・基R1のいずれも一緒になって環系を形成していないハイブリッドモノマーの場合、カチオン重合により、付加的に更なる低分子量の縮合物、例えば水が形成される。この反応は、従って縮合重合であり、これ以降でツイン重縮合とも称される。
Mは、金属又は半金属、好ましくはSi、Ti、Zr又はHf、より好ましくはSi又はTiであり、
A1、A2、A3は、それぞれ独立して水素又は直鎖状又は分枝鎖状の、脂肪族炭化水素基、芳香族炭化水素基又は芳香族−脂肪族炭化水素基である]のものである。
Mは、金属又は半金属、好ましくはSi、Ti、Zr又はHf、より好ましくはSi又はTiであり、
A1、A2、A3、A4は、それぞれ独立して水素又は直鎖状又は分枝鎖状の、脂肪族炭化水素基、芳香族炭化水素基又は芳香族−脂肪族炭化水素基であり、
R3、R4は、それぞれ独立して水素又は1〜6個の炭素原子を有するアルキル基、好ましくはメチル又はHである]のスピロ化合物である。
a)金属又は半金属を有する第一のモノマー単位、及び
b)化学結合によって第一のモノマー単位に結合されている第二のモノマー単位
を有する少なくとも1つのツインモノマーを有する組成物の使用を提供し、その際、該ツインモノマーは、該化学結合の切断及び第一のモノマー単位を有する第一のポリマー及び第二のモノマー単位を有する第二のポリマーの形成を伴いながら重合可能であり、且つ第一及び第二のモノマー単位は共通の機構によって重合可能である。
a)金属又は半金属を有する第一のモノマー単位、及び化学結合によって第一のモノマー単位に結合されている第二のモノマー単位を有する少なくとも1つのツインモノマーを半導体基板に適用し、且つ
b)この少なくとも1つの有機金属化合物を、該化学結合の切断及び第一のモノマー単位を有する第一のポリマー及び第二のモノマー単位を有する第二のポリマーの形成を伴いながら重合し、且つ、その際、第一及び第二のモノマー単位を同じ機構によって重合する処理によって適用されることができる。
Claims (17)
- a)金属又は半金属を有する第一のモノマー単位、及び
b)化学結合によって第一のモノマー単位に結合されている第二のモノマー単位
を有する少なくとも1つのツインモノマーを重合することによって得られる誘電体を有する、3.5以下の誘電率を有する誘電体層であって、その際、前記重合は、前記ツインモノマーを、前記化学結合の切断及び前記第一のモノマー単位を有する第一のポリマーの形成及び前記第二のモノマー単位を有する第二のポリマーの形成を伴いながら重合することを含み、且つ、その際、第一及び第二のモノマー単位は共通の機構によって重合する。 - 前記の金属又は半金属が、Si、B、Ti、Zr又はHf、特にSi又はTiである、請求項1記載の誘電体層。
- 前記第一のポリマーが本質的に無機系であり、且つ前記第二のポリマーが本質的に有機系である、請求項1又は2記載の誘電体層。
- 前記第一のモノマー単位及び前記第二のモノマー単位が、アニオン的に、カチオン的に又はフリーラジカル的に重合する、請求項1から3までのいずれか1項記載の誘電体層。
- 前記誘電率が3.0以下、特に2.5以下である、請求項1から4までのいずれか1項記載の誘電体層。
- 前記第二のポリマーが、熱的に、酸化的に又は熱的及び酸化的に除去されている、請求項1から5までのいずれか1項記載の誘電体層。
- 前記の基A1、基A2、基A3及び、存在する場合、基A4の少なくとも2個が互いに結ばれており、より好ましくは融合している、請求項7又は8記載の誘電体層。
- 前記の基A1、基A2、基A3及び、存在する場合、基A4の1個以上の炭素原子が、独立してヘテロ原子によって、より好ましくはO、S及び/又はNによって置き換えられている、請求項7から9までのいずれか1項記載の誘電体層。
- A1、A2、A3及び、存在する場合、A4が、それぞれ独立して1個以上の官能基、特にハロゲン、例えばBr及びCl、それにCN及びNR2であり、その際、Rが、特にH又は脂肪族又は芳香族の炭化水素、好ましくはH、メチル、エチル又はフェニルである、請求項7から10までのいずれか1項記載の誘電体層。
- A1及びA3がそれぞれHであり、好ましくはA1、A2、A3及び、存在する場合、A4がそれぞれHである、請求項7から11までのいずれか1項記載の誘電体層。
- 半導体基板上に3.5の誘電率を有する誘電体層を製造するための、
a)金属又は半金属を有する第一のモノマー単位、及び
b)化学結合によって第一のモノマー単位に結合されている第二のモノマー単位
を有する少なくとも1つのツインモノマーを有する組成物の使用であって、その際、前記ツインモノマーが、前記化学結合の切断及び前記第一のモノマー単位を有する第一のポリマー及び前記第二のモノマー単位を有する第二のポリマーの形成を伴いながら重合可能であり、且つ第一及び第二のモノマー単位が共通の機構によって重合可能である、少なくとも1つのツインモノマーを有する組成物の使用。 - 請求項1から14までのいずれか1項記載の誘電体層を有する半導体部品。
- 3.5未満の誘電率を有する少なくとも1つの誘電体層を有する半導体部品の製造法であって、その際、
a)金属又は半金属を有する第一のモノマー単位、及び化学結合によって第一のモノマー単位に結合されている第二のモノマー単位を有する少なくとも1つのツインモノマーを半導体基板に適用し、且つ
b)前記の少なくとも1つの有機金属化合物を、前記化学結合の切断及び前記第一のモノマー単位を有する第一のポリマー及び前記第二のモノマー単位を有する第二のポリマーの形成を伴いながら重合し、且つ、その際、前記の第一及び第二のモノマー単位が同じ機構によって重合する、3.5未満の誘電率を有する少なくとも1つの誘電体層を有する半導体部品の製造法。
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EP08155304.2 | 2008-04-28 | ||
EP08155304 | 2008-04-28 | ||
PCT/EP2009/055092 WO2009133082A1 (en) | 2008-04-28 | 2009-04-28 | Low-k dielectrics obtainable by twin polymerization |
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JP2011524077A true JP2011524077A (ja) | 2011-08-25 |
JP2011524077A5 JP2011524077A5 (ja) | 2012-06-14 |
JP5404772B2 JP5404772B2 (ja) | 2014-02-05 |
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US (1) | US8476368B2 (ja) |
EP (1) | EP2272068B1 (ja) |
JP (1) | JP5404772B2 (ja) |
KR (1) | KR101610978B1 (ja) |
CN (1) | CN102017015B (ja) |
IL (1) | IL208534A (ja) |
MY (1) | MY152799A (ja) |
RU (1) | RU2010148303A (ja) |
TW (1) | TWI491657B (ja) |
WO (1) | WO2009133082A1 (ja) |
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WO2009133082A1 (en) | 2009-11-05 |
US8476368B2 (en) | 2013-07-02 |
RU2010148303A (ru) | 2012-06-10 |
MY152799A (en) | 2014-11-28 |
CN102017015A (zh) | 2011-04-13 |
EP2272068B1 (en) | 2018-07-04 |
IL208534A0 (en) | 2010-12-30 |
US20110046314A1 (en) | 2011-02-24 |
CN102017015B (zh) | 2013-01-16 |
TWI491657B (zh) | 2015-07-11 |
TW201000532A (en) | 2010-01-01 |
IL208534A (en) | 2013-09-30 |
KR20110007215A (ko) | 2011-01-21 |
KR101610978B1 (ko) | 2016-04-08 |
EP2272068A1 (en) | 2011-01-12 |
JP5404772B2 (ja) | 2014-02-05 |
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