CN101645394A - 基板支撑、运送用托盘 - Google Patents

基板支撑、运送用托盘 Download PDF

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CN101645394A
CN101645394A CN200910148889A CN200910148889A CN101645394A CN 101645394 A CN101645394 A CN 101645394A CN 200910148889 A CN200910148889 A CN 200910148889A CN 200910148889 A CN200910148889 A CN 200910148889A CN 101645394 A CN101645394 A CN 101645394A
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柴垣真果
榑松保美
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Canon Anelva Corp
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Abstract

本发明提供一种基板支撑、运送用托盘，该基板支撑、运送用的托盘被载置在配备于对基板进行加热处理的处理室的基板支撑部，特别是被载置在内置着基板加热用的加热构件的基板支撑部上，在上侧放置着基板，在对基板进行加热处理时，能够更均匀地加热基板，同时，在加热处理结束后，不必等到基板的温度降低，即可简单地从上述基板支撑部卸下，从进行加热处理的处理室运往他处。本发明的基板支撑、运送用托盘中，在上面侧具有圆盘状的基板支撑部，具有从该圆盘状的基板支撑部的周缘向下侧延伸的筒状侧壁部，和从该筒状侧壁部的下端侧在径向向外侧延伸的环状部。

Description

基板支撑、运送用托盘
本申请是申请号为200580039349.5、申请日为2005年10月18日、由申请人佳能安内华股份有限公司提出的、发明名称为“基板支撑·运送用托盘”的申请的分案申请。
技术领域
本发明涉及被载置在配备于对半导体基板进行加热处理的处理室的基板支撑部件上，在上侧放置着基板的基板支撑·运送用的托盘。特别是涉及被载置在内部具有基板加热处理用的加热构件的基板支撑部件上，在上侧放置着半导体基板的基板支撑·运送用的托盘。
背景技术
在半导体制造装置中，在真空状态或大气压状态的处理室内，进行对半导体基板的加热处理，在这种情况下，考虑对半导体基板均匀的加热、加热处理完成后的半导体基板的移送等，在上部侧具有基板支撑部的基板支撑·运送用托盘上放置着半导体基板的状态下，对半导体基板进行加热处理。
例如，如图7(a)所示，将基板1放置于在上部侧具有基板支撑部的基板支撑·运送用托盘18上，将它放在内置着对半导体基板进行加热的加热构件4的基板支撑部件2上，在真空状态或大气压状态下，进行针对基板1的加热处理。
该图7(a)所示的方式是以均匀加热基板1为目的，使用了基板支撑·运送用托盘18，但是，在想要将加热处理完成后的基板1从处理室(未图示出)内取出，将下一个受到加热处理的新的基板运入处理室内进行加热处理时，在基板支撑·运送用托盘18上没有运送用机械手等可支撑的位置。因此，结果为存在不能在基板1的温度降低前进行运送处理的问题。
因此，如图7(b)所示，采用了平板状、大直径的基板支撑·运送用托盘18a，该基板支撑·运送用托盘18a在上部侧具有基板支撑部，外周缘18d比内置着对基板进行加热的加热构件4的基板支撑部件2的外周缘2a大。这样的现有技术例如记载于特开2002-2695等中。
在这样方式的基板支撑·运送用托盘18a的情况下，因为外周缘18d比内置着对基板1进行加热的加热构件4的基板支撑部件2的外周缘2a大，所以可以通过运送用机械手等的前端为双股的叉，来支撑基板支撑·运送用托盘18a的外周缘侧18c的下侧(图7(b)中下侧)。
因此，若对基板1进行加热的处理完成后，则可以不必等到基板1的温度降低，可以通过运送用机械手等的成为叉的双股的前端部分来支撑基板支撑·运送用托盘18a的外周缘侧18c的下侧(图4(b)中下侧)，从基板支撑部件2上卸下基板支撑·运送用托盘18a。然后，通过同样地运来在基板支撑部上放置着下一个进行加热处理的新基板的其它的基板支撑·运送用托盘18a，并放置在基板支撑部件2上，可以开始新基板的加热处理。据此，能够有效地进行多片基板的加热处理。
但是，在内置着对基板进行加热的加热构件4的基板支撑部件2上，如图7(b)所示的方式那样，放置着外周缘18d比基板支撑部件2的外周缘2a大，平板状的大直径的基板支撑·运送用托盘18a，在进行基板1的加热处理的情况下，热从突出于基板支撑部件2的外周缘2a的基板支撑·运送用托盘18a的外周缘侧18c放射。因此，在基板支撑·运送用托盘18a的中心部侧和基板支撑·运送用托盘18a的外周缘侧18c之间温度不均匀，其结果为，产生了难以进行基板1的均匀加热的问题。
本发明的目的在于提供一种基板支撑·运送用托盘，该基板支撑·运送用的托盘是在真空状态或大气压状态下，被载置在配备于对基板(半导体基板)进行加热处理的处理室的基板支撑部件上，特别是被载置在内置着基板加热用的加热构件的基板支撑部件上，在上侧放置着基板(半导体基板)，在对基板(半导体基板)进行加热处理时，能够更均匀地加热基板，同时，在加热处理结束后，不必等到基板(半导体基板)的温度降低，即可简单地从上述基板支撑部件卸下，从进行加热处理的处理室运往他处，能够有效地进行多片基板的加热处理。
发明内容
为了解决上述课题，本发明所提出的基板支撑·运送用托盘是被载置在配备于对基板(半导体基板)进行加热处理的处理室的基板支撑部件上，在上侧放置着基板的基板支撑·运送用的托盘，其特征在于，在上部侧具有圆盘状的基板支撑部，具有从该圆盘状的基板支撑部的周缘向下侧延伸的筒状侧壁部，和从该筒状侧壁部的下端侧在径向向外侧延伸的环状部。
发明效果
根据本发明，可以提供一种基板支撑·运送用托盘，该基板支撑·运送用的托盘是在真空状态或大气压状态下，被载置在配备于对基板(半导体基板)进行加热处理的处理室的基板支撑部件上，特别是被载置在内置着基板加热用的加热构件的基板支撑部件上，在上侧放置着基板(半导体基板)，在对基板进行加热处理时，能够更均匀地加热基板，同时，在加热处理结束后，不必等到基板的温度降低，即可简单地从上述基板支撑部件卸下，从进行加热处理的处理室运往他处，能够有效地进行多片基板的加热处理。
附图说明
图1是说明本发明的第一实施方式的省略了一部分的剖视图。
图2是说明本发明的第二实施方式的省略了一部分的剖视图。
图3是说明图1所示的本发明的第一实施方式的其它的例子的省略了一部分的剖视图。
图4是说明图2所示的本发明的第二实施方式的其它的例子的省略了一部分的剖视图。
图5(a)、(b)、(c)是说明本发明的第三实施方式的省略了一部分的剖视图。
图6(a)是说明对在上侧载置着基板的状态的本发明的基板支撑·运送用托盘进行运送的状态的俯视图，(b)是说明对在上侧载置着基板的状态的本发明的基板支撑·运送用托盘进行运送的状态的正视图。
图7(a)、(b)是说明以往的基板支撑·运送用托盘的省略了一部分的剖视图。
具体实施方式
下面，参照附图，说明本发明的优选的实施方式。
图1是说明本发明的第一实施例的图。
在对基板1进行加热处理的处理室11的内部配备着基板支撑部件2。基板支撑部件2在内部具有由电子冲击加热用的热电子发生构件、红外线灯加热用的红外线灯等构成的基板加热用的加热构件4。据此，在处理室11内对基板1进行加热处理。
在处理室11内对基板1进行的加热处理可以使处理室11内成为规定的真空状态进行，也可以使处理室11内成为大气压状态进行。
本发明的基板支撑·运送用托盘8被载置在该基板支撑部2上，在上侧放置着基板(例如是Si基板、SiC基板那样的半导体基板)。
基板支撑·运送用托盘8在其上部侧具有圆盘状的基板支撑部8e(图3(a))。筒状侧壁部9从该圆盘状的基板支撑部8e的周缘向下侧延伸。
筒状侧壁部9可以如图1所示，成为沿圆柱状的基板支撑部件2的外周，从圆盘状的基板支撑部8e的周缘向垂直方向下侧(图1中下侧)延伸的圆筒状。另外，也可以如图2所示，成为以沿圆柱状的基板支撑部件2的外周，从圆盘状的基板支撑部8e的周缘开始随着趋近垂直方向下侧(图1中下侧)直径逐渐增大的方式，倾斜地扩大的倒漏斗状的形式。
但是在通过加热构件4借助基板支撑部件2进行加热时，在减小与基板支撑·运送用托盘8之间产生的温度差、基板支撑·运送用托盘8的面内的温度分布，能够在基板支撑·运送用托盘8面内进行更均匀地加热的基础上，最好是使筒状侧壁部9如图1所示那样为沿基板支撑部件2的外周，从圆盘状的基板支撑部8e的周缘延伸的圆筒状。
环状部10从筒状侧壁部9的下端侧在径向向外侧延伸。
在通过运送机械手等提升、运送象图1所示那样，在圆盘状的基板支撑部8e上载置着基板1的基板支撑·运送用托盘8时，从与运送机械手等的前端的臂23、24连结的叉基端部22分为两股并延伸的叉21a、21b如图6(a)、(b)所示那样，支撑环状部10的下侧。
因此，若结束对基板1的加热处理，则不必等到基板1的温度降低，可以用运送用机械手等的叉21a、21b来支撑基板支撑·运送用托盘8的环状部10的下侧，将基板支撑·运送用托盘8从基板支撑部件2上卸下。然后，可以通过同样地运来在圆盘状的基板支撑部8e上放置着下一个进行加热处理的新基板的其它的基板支撑·运送用托盘8，并放置在基板支撑部件2上，来开始新基板的加热处理。据此，能够有效地进行多片基板的加热处理。
本发明的基板支撑·运送用托盘8如图1、图2所示，具有从在上部侧所具备的圆盘状的基板支撑部8e的周缘向下侧延伸的筒状侧壁部9。因此，在通过加热构件4，借助基板支撑部件2进行加热时，与图7(a)、(b)所示的那样方式的以往的基板支撑·运送用托盘18、18a的情况相比，能够减小在基板支撑部件2和基板支撑·运送用托盘8之间产生的温度差。再有，与图7(a)、(b)所示的那样方式的以往的基板支撑·运送用托盘18、18a的情况相比，也可以减小基板支撑·运送用托盘8的面内的温度分布。因此，能够进行在基板支撑·运送用托盘8面内的更均匀的加热。
另外，如图3、图4所示，即使是不具有环状部10，仅配备筒状侧壁部9的方式，也能发挥上述的效果。图3所示的实施方式是在图1所示的实施方式中，不具有环状部10，仅具有筒状侧壁部9。图4所示的实施方式是在图2所示的实施方式中，不具有环状部10，仅具有筒状侧壁部9。但是，如图1、图2所示的实施方式那样，还是具有环状部10的方式有利。这是因为在进一步减小在内部具有发热体4的基板支撑部件2和基板支撑·运送用托盘8之间产生的温度差，进一步减小基板支撑·运送用托盘8面内的温度分布，进行在基板支撑·运送用托盘8面内的更均匀的加热方面是理想的。
图5(a)是进行加热处理时，在基板支撑·运送用托盘8上放置盖5，在基板支撑·运送用托盘8上载置的基板1(例如SiC基板)通过盖5被覆盖，通过该盖5和基板支撑·运送用托盘8密封基板1。
据此，在对基板1进行加热处理时，通过盖5密封配置着基板1的空间3。即，通过在载置着加热处理的基板1的基板支撑·运送用托盘8上覆盖盖5，用盖5密封配置着基板1的空间3。
这样一来，在加热处理时，如上所述，因为配置着基板1的空间3被密封，另外，施加了来自盖5的辐射热，所以可以更有效地对基板1进行加热。
图5(b)与图5(a)所示的实施方式的不同之处在于，盖5在侧壁5c的下端侧具有被钩挂在基板支撑·运送用托盘8的上端外周的钩挂阶梯部6，在钩挂阶梯部6中的盖5的侧壁内径R2比基板支撑·运送用托盘8的筒状侧壁部9的外径R3至少大正公差的量。
即，图5(b)所示的本发明的基板支撑·运送用托盘8是上述的本发明的基板支撑·运送用托盘8与盖5的组合，该盖5配置于在上侧配置有基板1的基板支撑部上，并对在基板支撑部的上侧配置有基板1的空间3进行密封，在下端侧具有被钩挂在基板支撑部的上端外周的钩挂阶梯部6，在钩挂阶梯部6中的盖的侧壁内径(R2)与基板支撑部的上端的外径(R3)相比至少大正公差的量。
据此，在进行加热处理时，通过盖5、基板支撑·运送用托盘8的热膨胀，提高了配置着基板1的空间3的密封状态。
图5(c)与图5(b)所示的实施方式的不同之处在于，盖5在盖主体5a的表面形成着涂层5b。
其目的在于，通过对盖主体5a的表面进行涂层，抑制在加热处理期间的来自盖5的气体释放、形成盖5的材质的飞散，防止基板1、处理室11的内面被污染。
涂层5b可由能够防止气体释放的材质、例如热分解碳(PyrolyticGraphite、Pyrolytic Carbon)形成，希望涂层5b的厚度为10-50μm。
上面，参照附图说明了本发明的优选的实施方式，但本发明并不限定于该实施方式，在权利要求范围的记载可把握的技术范围内，可变更为各种方式。

Claims (4)

1.一种对基板进行加热处理的装置，包括：
处理室(11)，
配置在该处理室内的基板支撑部件(2)，包括组成内部空间的顶棚壁和侧壁，在内部空间内提供对顶棚壁和侧壁进行加热的加热构件(4)；及
基板托盘(8)可卸下地附于支撑构件，并且包括延伸出该基板支撑部件的顶棚壁的顶部(8e)，并且与该基板支撑部件的顶棚壁的外表面热耦合，并且侧壁部(9)沿着该基板支撑部件的侧壁向下延伸并与该基板支撑部件的侧壁的外表面热耦合，并且该侧壁部被热连接到顶部，并且侧壁部的外周缘被配置成通过传递机器人的叉机械地支撑。
2.如权利要求1所述的装置，其中，加热构件产生被冲击到基板支撑部件的顶棚壁和侧壁的内表面上的电子，用以加热基板支撑部件。
3.如权利要求1所述的装置，其中，侧壁部的外周缘被提供径向向外延伸的环状部(10)。
4.如权利要求1所述的装置，进一步包括，安装在基板托盘的盖，该盖的外周被提供插入到基板托盘的侧壁部的外表面的钩挂阶梯部(6)。
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