WO2006043531A1 - 基板支持・搬送用トレイ - Google Patents

基板支持・搬送用トレイ Download PDF

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Publication number
WO2006043531A1
WO2006043531A1 PCT/JP2005/019091 JP2005019091W WO2006043531A1 WO 2006043531 A1 WO2006043531 A1 WO 2006043531A1 JP 2005019091 W JP2005019091 W JP 2005019091W WO 2006043531 A1 WO2006043531 A1 WO 2006043531A1
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WO
WIPO (PCT)
Prior art keywords
substrate
substrate support
tray
heat treatment
cap
Prior art date
Application number
PCT/JP2005/019091
Other languages
English (en)
French (fr)
Inventor
Masami Shibagaki
Yasumi Kurematsu
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Priority to EP05795512A priority Critical patent/EP1811559A4/en
Priority to US11/665,446 priority patent/US7780440B2/en
Priority to JP2006542992A priority patent/JP4453984B2/ja
Publication of WO2006043531A1 publication Critical patent/WO2006043531A1/ja
Priority to US12/632,161 priority patent/US8147242B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Definitions

  • the present invention relates to a substrate supporting and conveying tray placed on a substrate supporting member provided in a processing chamber in which a heat treatment for a semiconductor substrate is performed, and a substrate is placed on the upper side.
  • the present invention relates to a substrate supporting and conveying tray which is placed on a substrate supporting member provided with heating means for substrate heating processing and in which a semiconductor substrate is placed on the upper side.
  • the semiconductor substrate may be subjected to heat treatment in a state where the semiconductor substrate is placed on the substrate support / transport tray having the substrate support portion on the upper side.
  • the substrate 1 is placed on a substrate supporting and conveying tray 18 having a substrate supporting portion on the upper side, and this is heated by a heating means 4 for heating the semiconductor substrate.
  • the substrate 1 may be subjected to a heat treatment in a vacuum state or an atmospheric pressure state on the substrate support member 2 in which is incorporated.
  • the substrate 1 is used for the purpose of heating the substrate 1 uniformly, and the substrate 1 that has been subjected to the force heat treatment is processed.
  • the substrate support 'transport tray 18 can be supported by a transport robot, etc. There is no place to be. Therefore, after all, there is a problem that the transfer process cannot be performed until the temperature of the substrate 1 is lowered.
  • FIG. 7 (b) there is a substrate support portion on the upper side, and the outer peripheral edge 18d has a built-in heating means 4 for heating the substrate.
  • a substrate supporting / transporting tray 18a having a plate-like shape and a large diameter larger than the peripheral edge 2a is adopted.
  • Such a prior art is described in, for example, Japanese Patent Application Laid-Open No. 2002-2695.
  • the outer peripheral edge 18d is larger than the outer peripheral edge 2a of the substrate support member 2 which has built-in heating means 4 for heating the substrate 1.
  • the bottom of the outer peripheral edge 18c of the substrate support / transport tray 18a (the lower side in FIG. 7 (b)) can be supported by a fork whose front end is bifurcated.
  • the substrate is supported at the forked end portion of the fork of the transfer robot or the like without waiting for the temperature of the substrate 1 to decrease.
  • the substrate support / transport tray 18a can be removed from above the substrate support member 2 by supporting the lower side (the lower side in FIG. 4B) of the outer peripheral edge 18c of the transport tray 18a. Then, another substrate support 'transport tray 18a on which a new substrate to be heat-treated next is placed on the substrate support portion is transported in the same manner and placed on the substrate support member 2. A new substrate heat treatment can be started. Thereby, the heat treatment of a plurality of substrates can be performed efficiently.
  • the outer peripheral edge 18d is more than the outer peripheral edge 2a of the substrate support member 2 as shown in FIG. 7B.
  • the substrate support' transport tray protruding from the outer peripheral edge 2a of the substrate support member 2 is used. Heat is radiated from the outer peripheral side 18c of 18a. Therefore, the temperature becomes uneven between the center side of the substrate support 'transport tray 18a and the outer peripheral side 18c of the substrate support' transport tray 18a. As a result, the substrate 1 can be heated uniformly. There was a problem that became difficult.
  • the present invention incorporates a substrate support member provided in a processing chamber in which a substrate (semiconductor substrate) is heated in a vacuum state or an atmospheric pressure state, particularly a heating means for heating the substrate.
  • a substrate support 'transport tray that is placed on the substrate support member and the substrate (semiconductor substrate) is placed on the upper side.
  • the heat treatment of the substrate it is more uniform on the substrate.
  • the heat treatment is completed, it can be easily removed from the substrate support member without waiting until the temperature of the substrate (semiconductor substrate) decreases, and the heat treatment is performed. It can be transported from one room to another for efficient use. It is an object of the present invention to provide a substrate supporting and carrying tray capable of performing heat treatment on a plurality of substrates.
  • the substrate support / transport tray proposed by the present invention is disposed in a processing chamber in which a heat treatment is performed on a substrate (semiconductor substrate)!
  • the tray has a disk-like substrate support part on the upper side, and A cylindrical side wall portion extending downward from the peripheral edge and an annular portion extending radially outward from the lower end side of the cylindrical side wall portion are provided.
  • the substrate support member provided in the processing chamber in which the heat treatment is performed on the substrate (semiconductor substrate) in a vacuum state or an atmospheric pressure state, in particular, the heating means for heating the substrate is incorporated.
  • This is a substrate support 'transport tray that is placed on the substrate support member and the substrate (semiconductor substrate) is placed on the upper side.
  • the heat treatment of the substrate more uniform heating to the substrate is possible.
  • the heat treatment is completed, it is easily removed from the substrate support member and transported from the heat treatment chamber to another without waiting until the temperature of the substrate decreases! / Therefore, it is possible to provide a substrate supporting / conveying tray capable of efficiently performing a heat treatment on a plurality of substrates.
  • FIG. 1 illustrates a first embodiment of the present invention.
  • a substrate support member 2 is disposed inside a processing chamber 11 in which a heat treatment is performed on the substrate 1.
  • the substrate support member 2 includes heating means 4 for heating the substrate, such as thermoelectron generating means for electron impact heating and infrared lamps for heating infrared lamps. Thereby, the heat treatment for the substrate 1 is performed in the processing chamber 11.
  • the heat treatment performed on the substrate 1 in the processing chamber 11 can be performed in a predetermined vacuum state in the processing chamber 11, or is performed in an atmospheric pressure state in the processing chamber 11.
  • the substrate support / transport tray 8 of the present invention is placed on the substrate support 2 and a substrate (for example, a Si substrate or a semiconductor substrate such as a SiC substrate) is placed on the upper side. is there.
  • the substrate support / transport tray 8 has a disk-shaped substrate support portion 8e (FIG. 3 (a)) on its upper side.
  • a cylindrical side wall 9 extends from the peripheral edge of the disk-shaped substrate support 8e toward the lower side.
  • the cylindrical side wall portion 9 extends vertically downward from the periphery of the disk-shaped substrate support member 8e along the outer periphery of the columnar substrate support member 2 (in FIG. 1, It can have a cylindrical shape extending to the lower side.
  • the diameter gradually increases from the periphery of the disk-shaped substrate support 8e toward the lower side in the vertical direction (lower side in FIG. 1) along the outer periphery of the cylindrical substrate support member 2. It spreads diagonally so that it becomes larger! /, In the form of a reverse funnel.
  • the cylindrical side wall portion 9 is arranged along the outer periphery of the substrate support member 2 as shown in FIG. It is preferable to form a cylindrical shape extending from the periphery of the disk-shaped substrate support 8e.
  • the annular portion 10 extends outward in the radial direction.
  • the forks 21a and 21b which are connected to the fork arms 23 and 24 and extend from the fork base end 22 in a bifurcated manner, extend below the annular portion 10 as shown in FIGS. 6 (a) and 6 (b). To support.
  • the substrate is supported by the forks 21a, 2 lb of the transfer robot, etc. without waiting for the temperature of the substrate 1 to decrease.
  • the substrate support / transport tray 8 can be removed from the substrate support member 2 while supporting the lower side of the annular portion 10. Then, a new substrate to be subjected to the next heat treatment is transported in a similar manner to another substrate support 'transport tray 8 placed on the disk-shaped substrate support 8e. By placing it on, a new substrate heat treatment can be started. Thereby, the heat treatment of a plurality of substrates can be performed efficiently.
  • the substrate support / transport tray 8 of the present invention is a cylinder that extends downward from the periphery of a disk-shaped substrate support 8e provided on the upper side.
  • the side wall portion 9 is formed. Therefore, when heating is performed through the substrate support member 2 by the heating means 4, compared to the case of the conventional substrate support 'transport trays 18 and 18a in the form shown in Figs. 7 (a) and 7 (b). In comparison, the temperature difference between the substrate support member 2 and the substrate support / transport tray 8 can be reduced. Furthermore, the temperature distribution in the surface of the substrate support 'transport tray 8 is also smaller than that of the conventional substrate support' transport trays 18 and 18a in the form shown in Figs. 7 (a) and 7 (b). can do. Therefore, it was possible to perform more uniform heating within the eight sides of the substrate support / transport tray.
  • FIGS. 3 and 4 the above-described effects can be exhibited even in a configuration in which only the cylindrical side wall portion 9 is not provided, and the annular portion 10 is not provided.
  • the annular portion 10 is not provided in the embodiment shown in FIG. 1, but only the cylindrical side wall portion 9 is provided.
  • the annular portion 10 is not provided in the embodiment shown in FIG. 2, but only the cylindrical side wall portion 9 is provided.
  • the temperature difference generated between the substrate support member 2 with the heating element 4 inside and the substrate support / transport tray 8 is further reduced, and the temperature distribution in the surface of the substrate support / transport tray 8 is further decreased. This is because it is preferable to perform more uniform heating within the surface of the substrate support / transport tray 8.
  • FIG. 5 (a) shows the substrate 1 placed on the substrate support / transport tray 8 when the cap 5 is placed on the substrate support / transport tray 8 when the heat treatment is performed.
  • a SiC substrate is covered with a cap 5, and the substrate 1 is sealed by the cap 5 and the substrate support / transport tray 8.
  • the space 3 in which the substrate 1 is disposed is sealed with the cap 5. That is, the substrate 1 is placed by placing the cap 5 on the substrate supporting and carrying tray 8 on which the substrate 1 to be heat-treated is placed, and the space 3 is sealed with the cap 5. .
  • the space 3 in which the substrate 1 is disposed is sealed as described above, and the radiant heat from the cap 5 is applied, so that the substrate 1 can be heated more efficiently. You It can be done.
  • FIG. 5 (b) is different from the embodiment shown in FIG. 5 (a) in that the cap 5 is hooked on the outer periphery of the upper end of the tray 8 for supporting and supporting the substrate on the lower end side of the side wall 5c.
  • the side wall inner diameter R2 of the cap 5 at the hooking step 6 is at least a plus tolerance larger than the outer diameter R3 of the cylindrical side wall 9 of the substrate support / transport tray 8. It is a point.
  • the substrate support 'conveying tray 8 of the present invention shown in FIG. 5 (b) has the above-described substrate support' conveying tray 8 of the present invention, and the substrate 1 is disposed on the upper side.
  • the cap 5 that has a step 6 and the side wall inner diameter (R2) of the cap at the latching step 6 is at least a plus tolerance larger than the outer diameter (R3) of the upper end of the substrate support. It is what.
  • the sealed state of the space 3 in which the substrate 1 is arranged is enhanced by the thermal expansion of the cap 5 and the substrate support / transport tray 8.
  • FIG. 5 (c) is different from the embodiment shown in FIG. 5 (b) in that the cap 5 has a coating layer 5b formed on the surface of the cap body 5a.
  • the coating layer 5b can be formed of a material capable of preventing gas release, for example, pyrolytic carbon (Pyrolytic Gr aphite, Pyrolytic Carbon), and the thickness of the coating layer 5b is preferably 10 to 50 ⁇ m. .
  • pyrolytic carbon Pyrolytic Gr aphite, Pyrolytic Carbon
  • FIG. 1 is a cross-sectional view with a part omitted illustrating a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view in which a part of the second embodiment of the present invention is omitted.
  • FIG. 3 is a partially omitted cross-sectional view illustrating another example of the first embodiment of the present invention shown in FIG. Figure.
  • FIG. 4 A cross-sectional view with a part omitted illustrating another example of the second embodiment of the present invention shown in FIG.
  • FIG. 5 (a), (b), (c) Sectional views in which a part of the third embodiment of the present invention is omitted. 6)
  • FIG. 6 is a front view for explaining a state of transporting the substrate support / transport tray of the present invention.
  • FIGS. 7A and 7B are cross-sectional views in which a part of a conventional substrate support / transport tray is omitted.

Abstract

【課題】基板に対する加熱処理が行われる処理室に配備されている基板支持部、特に、基板加熱用の加熱手段を内蔵している基板支持部の上に載置可能で、上側に基板が置かれる基板支持・搬送用のトレイであって、基板への加熱処理の際に、基板へのより均一な加熱を可能にし、同時に、加熱処理が終了したならば、基板の温度が低下するまで待つことなしに、簡単に、前記基板支持部から取り除き、加熱処理の行われた処理室から他へ搬送していくことが可能な基板支持・搬送用トレイを提供する。 【解決手段】上面側に円盤状の基板支持部を有し、当該円盤状の基板支持部の周縁から下側に向かって延びる筒状側壁部と、当該筒状側壁部の下端側から径方向で外側に延びる環状部とを備えている基板支持・搬送用トレイ。

Description

明 細 書
基板支持 ·搬送用トレイ
技術分野
[0001] この発明は、半導体基板に対する加熱処理が行われる処理室に配備されている基 板支持部材の上に載置され、上側に基板が置かれる基板支持'搬送用のトレイに関 する。特に、基板加熱処理用の加熱手段を内部に備えている基板支持部材の上に 載置され、上側に半導体基板が置かれる基板支持'搬送用のトレイに関する。
背景技術
[0002] 半導体製造装置において、真空状態あるいは大気圧状態の処理室内で半導体基 板への加熱処理を行う場合に、半導体基板への均一な加熱や、加熱処理完了後の 半導体基板の移送等を考慮して、上部側に基板支持部を有する基板支持 ·搬送用ト レイの上に半導体基板を置!、た状態で、半導体基板への加熱処理が行われることが ある。
[0003] 例えば、図 7 (a)図示のように、上部側に基板支持部を有する基板支持'搬送用トレ ィ 18の上に基板 1を置き、これを、半導体基板を加熱する加熱手段 4が内蔵されてい る基板支持部材 2の上において、真空状態あるいは大気圧状態で、基板 1への加熱 処理が行われることがある。
[0004] この図 7 (a)図示の形態は、基板 1を均一に加熱することを目的として基板支持'搬 送用トレイ 18を用いているものである力 加熱処理が完了した基板 1を処理室 (不図 示）内から取り出し、次に加熱処理を受ける新たな基板を処理室内に搬送して加熱 処理を行おうとするときに、基板支持'搬送用トレイ 18に搬送用ロボット等が支持でき る箇所がない。そこで、結局、基板 1の温度が低下するまで搬送処理を行うことができ ないという問題があった。
[0005] そこで、図 7 (b)図示のように、上部側に基板支持部を有し、外周縁 18dが、基板を 加熱する加熱手段 4が内蔵されて!ヽる基板支持部材 2の外周縁 2aより大き ヽ、平板 状で大径の基板支持 ·搬送用トレイ 18aが採用されるようになって 、る。このような先 行技術は、例えば、特開 2002— 2695などに記載されている。 [0006] このような形態の基板支持'搬送用トレイ 18aの場合、外周縁 18dが、基板 1を加熱 する加熱手段 4が内蔵されて!ヽる基板支持部材 2の外周縁 2aより大き ヽので、搬送 用ロボット等の先端が二股になっているフォークで、基板支持'搬送用トレイ 18aの外 周縁側 18cの下側（図 7 (b)中、下側）を支持することができる。
[0007] そこで、基板 1を加熱する処理が完了したならば、基板 1の温度が低下するのを待 つことなしに、搬送用ロボット等のフォークの二股になっている先端部分で基板支持' 搬送用トレイ 18aの外周縁側 18cの下側（図 4 (b)中、下側）を支持して、基板支持' 搬送用トレイ 18aを基板支持部材 2の上から取り外すことができる。そして、次に加熱 処理が行われる新たな基板が基板支持部の上に置かれている別の基板支持'搬送 用トレイ 18aを同様にして搬送してきて基板支持部材 2の上に置くことにより、新たな 基板の加熱処理を開始することができる。これにより、効率よく複数枚の基板の加熱 処理を行うことができる。
[0008] しかし、基板を加熱する加熱手段 4が内蔵されている基板支持部材 2の上に、図 7 ( b)図示の形態のように、外周縁 18dが基板支持部材 2の外周縁 2aより大きい、平板 状で大径の基板支持'搬送用トレイ 18aが置かれて基板 1の加熱処理が行われる場 合には、基板支持部材 2の外周縁 2aより突出している基板支持'搬送用トレイ 18aの 外周縁側 18cから熱が放射される。そこで、基板支持'搬送用トレイ 18aの中心部側 と、基板支持'搬送用トレイ 18aの外周縁側 18cとの間で温度が不均一になり、この結 果、基板 1の均一な加熱を行うことが難しくなるという問題があった。
発明の開示
発明が解決しょうとする課題
[0009] この発明は、真空状態あるいは大気圧状態で基板 (半導体基板）に対する加熱処 理が行われる処理室に配備されている基板支持部材、特に、基板加熱用の加熱手 段を内蔵している基板支持部材の上に載置され、上側に基板 (半導体基板)が置か れる基板支持'搬送用のトレイであって、基板 (半導体基板)への加熱処理の際に、 基板へのより均一な加熱を可能にし、同時に、加熱処理が終了したならば、基板（半 導体基板)の温度が低下するまで待つことなしに、簡単に、前記基板支持部材から 取り除き、加熱処理の行われた処理室から他へ搬送していくことが可能で、効率よく 複数枚の基板の加熱処理を行うことができる基板支持'搬送用トレイを提供することを 目的としている。
課題を解決するための手段
[0010] 前記課題を解決するため、この発明が提案する基板支持'搬送用トレイは、基板（ 半導体基板）に対する加熱処理が行われる処理室に配備されて！ヽる基板支持部材 の上に載置され、上側に基板が置かれる基板支持'搬送用のトレイであって、上部側 に円盤状の基板支持部を有し、当該円盤状の基板支持部の周縁から下側に向かつ て延びる筒状側壁部と、当該筒状側壁部の下端側から径方向で外側に延びる環状 部とを備えて 、ることを特徴とするものである。
発明の効果
[0011] この発明によれば、真空状態あるいは大気圧状態で基板 (半導体基板）に対する 加熱処理が行われる処理室に配備されている基板支持部材、特に、基板加熱用の 加熱手段を内蔵している基板支持部材の上に載置され、上側に基板 (半導体基板） が置かれる基板支持'搬送用のトレイであって、基板への加熱処理の際に、基板へ のより均一な加熱を可能にし、同時に、加熱処理が終了したならば、基板の温度が 低下するまで待つことなしに、簡単に、前記基板支持部材から取り除き、加熱処理の 行われた処理室から他へ搬送して!/、くことが可能で、効率よく複数枚の基板の加熱 処理を行うことができる基板支持'搬送用トレイを提供することができる。
発明を実施するための最良の形態
[0012] 以下、添付図面を参照して本発明の好ましい実施形態を説明する。
[0013] 図 1は、この発明の第一の実施例を説明するものである。
[0014] 基板 1に対する加熱処理が行われる処理室 11の内部に基板支持部材 2が配備さ れている。基板支持部材 2は、電子衝撃加熱用の熱電子発生手段や、赤外線ランプ 加熱用の赤外線ランプなど力 なる基板加熱用の加熱手段 4を内部に備えて 、る。 これによつて、処理室 11内で基板 1に対する加熱処理が行われる。
[0015] 処理室 11内で基板 1に対して行われる加熱処理は、処理室 11内を所定の真空状 態にして行うこともできるし、処理室 11内を大気圧状態にしておいて行うこともできる [0016] 本発明の基板支持'搬送用トレイ 8は、この基板支持部 2の上に載置され、上側に 基板 (例えば、 Si基板や、 SiC基板のような半導体基板)が置かれるものである。
[0017] 基板支持'搬送用トレイ 8はその上部側に円盤状の基板支持部 8e (図 3 (a) )を有し ている。この円盤状の基板支持部 8eの周縁からは下側に向力つて筒状側壁部 9が 延びている。
[0018] 筒状側壁部 9は、図 1図示のように、円柱状の基板支持部材 2の外周に沿って、円 盤状の基板支持部 8eの周縁から鉛直方向下側（図 1中、下側）に延びる円筒状にす ることができる。また、図 2図示のように、円柱状の基板支持部材 2の外周に沿って、 円盤状の基板支持部 8eの周縁から鉛直方向下側（図 1中、下側）に向かうに従って しだいに径が大きくなるように、斜めに拡がって!/、く逆漏斗状の形態をして 、るもので ちょい。
[0019] ただし、加熱手段 4によって基板支持部材 2を介して加熱が行う際に、基板支持'搬 送用トレイ 8との間に生じる温度差、基板支持'搬送用トレイ 8の面内の温度分布を小 さくし、基板支持'搬送用トレイ 8面内でのより均一な加熱を可能にする上では、筒状 側壁部 9を、図 1図示のように、基板支持部材 2の外周に沿って、円盤状の基板支持 部 8eの周縁から延びる円筒状にすることが好ま 、。
[0020] 筒状側壁部 9の下端側からは、径方向で外側に向力つて環状部 10が延びている。
[0021] 円盤状の基板支持部 8eの上に図 1図示のように基板 1が載置されている基板支持 •搬送用トレィ 8を搬送ロボット等によって持ち上げ、搬送する際には、搬送ロボット等 の先端のアーム 23、 24に連結されて 、るフォーク基端部 22から二股に分かれて延 びるフォーク 21a、 21bが図 6 (a)、（b)図示のように環状部 10の下側を支持する。
[0022] そこで、基板 1を加熱する処理が完了したならば、基板 1の温度が低下するのを待 つことなしに、搬送用ロボット等のフォーク 21a、 2 lbで基板支持'搬送用トレイ 8の環 状部 10の下側を支持して、基板支持'搬送用トレイ 8を基板支持部材 2の上から取り 外すことができる。そして、次に加熱処理が行われる新たな基板が円盤状の基板支 持部 8eの上に置かれている別の基板支持'搬送用トレイ 8を同様にして搬送してきて 基板支持部材 2の上に置くことにより、新たな基板の加熱処理を開始することができ る。これにより、効率よく複数枚の基板の加熱処理を行うことができる。 [0023] 本発明の基板支持'搬送用トレイ 8は、図 1、図 2図示のように、上部側に備えられて いる円盤状の基板支持部 8eの周縁から下側に向力つて延びる筒状側壁部 9を有し ている。そこで、加熱手段 4によって基板支持部材 2を介して加熱が行われる際に、 図 7 (a)、 （b)図示のような形態の従来の基板支持'搬送用トレイ 18、 18aの場合に比 較して、基板支持部材 2と基板支持'搬送用トレイ 8との間に生じる温度差を小さくす ることができる。更に、基板支持'搬送用トレイ 8の面内の温度分布も、図 7 (a)、 (b) 図示のような形態の従来の基板支持'搬送用トレイ 18、 18aの場合に比較して小さく することができる。そこで、基板支持'搬送用トレイ 8面内でのより均一な加熱を可能 にすることができた。
[0024] なお、図 3、図 4のように、環状部 10を備えていない、筒状側壁部 9のみが配備され ている形態にしても前述した効果を発揮させることができる。図 3図示の実施形態は、 図 1図示の実施形態において、環状部 10を備えておらず、筒状側壁部 9のみを備え ているものである。図 4図示の実施形態は、図 2図示の実施形態において、環状部 1 0を備えておらず、筒状側壁部 9のみを備えているものである。ただし、図 1、図 2図示 の実施形態のように、環状部 10をも備えている形態にした方が有利である。発熱体 4 を内部に備えて ヽる基板支持部材 2と基板支持 ·搬送用トレイ 8との間に生じる温度 差を一層小さくし、基板支持'搬送用トレイ 8面内の温度分布を更に小さくして、基板 支持'搬送用トレイ 8面内でのより均一な加熱を行う上で好ましいからである。
[0025] 図 5 (a)は、加熱処理が行われる際に、基板支持 ·搬送用トレイ 8の上にキャップ 5が 置かれ、基板支持'搬送用トレイ 8上に載置されている基板 1 (例えば、 SiC基板)が キャップ 5によって覆われ、このキャップ 5と基板支持'搬送用トレイ 8とによって基板 1 が密封されるようになって ヽるものである。
[0026] これによつて、基板 1を加熱処理するにあたって、基板 1が配置されている空間 3を キャップ 5で密封するようにしたのである。すなわち、加熱処理する基板 1が載置され ている基板支持'搬送用トレイ 8の上にキャップ 5を被せることにより基板 1が配置され て 、る空間 3をキャップ 5で密封するようにしたのである。
[0027] このようにすれば、加熱処理の際には前記のように基板 1が配置されている空間 3 が密封され、また、キャップ 5からの輻射熱が加わるので、より効率よく基板 1を加熱す ることがでさる。
[0028] 図 5 (b)が、図 5 (a)図示の実施形態と相違しているのは、キャップ 5が側壁 5cの下 端側に基板支持 ·搬送用トレイ 8の上端外周に掛止される掛止段部 6を有し、掛止段 部 6におけるキャップ 5の側壁内径 R2が、基板支持'搬送用トレイ 8の筒状側壁部 9 の外径 R3より少なくともプラス公差分大きくなつている点である。
[0029] すなわち、図 5 (b)に図示されている本発明の基板支持'搬送用トレイ 8は、前述し た本発明の基板支持'搬送用トレイ 8が、上側に基板 1が配置される基板支持部の上 に配置されて、基板支持部の上側に基板 1が配置されている空間 3を密封するキヤッ プであって、下端側に基板支持部の上端外周に掛止される掛止段部 6を有し、掛止 段部 6におけるキャップの側壁内径 (R2)が、基板支持部の上端の外径 (R3)より少 なくともプラス公差分大きくなつているキャップ 5と組み合わされているものである。
[0030] これによつて、加熱処理が行われた際に、キャップ 5、基板支持'搬送用トレイ 8の熱 膨張により、基板 1が配置されている空間 3の密封状態が高められる。
[0031] 図 5 (c)が、図 5 (b)図示の実施形態と相違しているのは、キャップ 5が、キャップ本 体 5aの表面にコーティング層 5bが形成されている点である。
[0032] キャップ本体 5aの表面にコーティングを施すことにより、加熱処理の間におけるキヤ ップ 5からのガス放出や、キャップ 5を形成している材質の飛散を抑制し、基板 1や、 処理室 11の内面が汚染されることを防止することを目的としたものである。
[0033] コーティング層 5bはガス放出を防止できる材質、例えば、熱分解炭素（Pyrolytic Gr aphite、 Pyrolytic Carbon)で形成することができ、コーティング層 5bの厚みは 10〜50 μ mとしておくことが望ましい。
[0034] 以上、本発明の好ましい実施形態を添付図面を参照して説明したが、本発明はか かる実施形態に限定されるものではなぐ特許請求の範囲の記載から把握される技 術的範囲にぉ 、て種々の形態に変更可能である。
図面の簡単な説明
[0035] [図 1]本発明の第一の実施形態を説明する一部を省略した断面図。
[図 2]本発明の第二の実施形態を説明する一部を省略した断面図。
[図 3]図 1図示の本発明の第一の実施形態の他の例を説明する一部を省略した断面 図。
圆 4]図 2図示の本発明の第二の実施形態の他の例を説明する一部を省略した断面 図。
[図 5] (a)、（b)、（c)本発明の第三の実施形態を説明する一部を省略した断面図。 圆 6] (a)上側に基板が載置されている状態の本発明の基板支持'搬送用トレィを搬 送する状態を説明する平面図、（b)上側に基板が載置されている状態の本発明の基 板支持 ·搬送用トレィを搬送する状態を説明する正面図。
[図 7] (a)、（b)従来の基板支持'搬送用トレイを説明する一部を省略した断面図。

Claims

請求の範囲
[1] 基板に対する加熱処理が行われる処理室に配備されている基板支持部材の上に載 置され、上側に基板が置かれる基板支持'搬送用のトレイであって、上部側に円盤状 の基板支持部を有し、当該円盤状の基板支持部の周縁から下側に向力つて延びる 筒状側壁部と、当該筒状側壁部の下端側から径方向で外側に延びる環状部とを備 えて ヽることを特徴とする基板支持 ·搬送用トレイ。
[2] 上側に基板が配置される基板支持部の上に配置されて、基板支持部の上側に基板 が配置されている空間を密封するキャップであって、下端側に基板支持部の上端外 周に掛止される掛止段部を有し、掛止段部におけるキャップの側壁内径 (R2)が、基 板支持部の上端の外径 (R3)より少なくともプラス公差分大きくなつて 、るキャップと 組み合わされることを特徴とする請求項 1記載の基板支持 ·搬送用トレイ。
PCT/JP2005/019091 2004-10-19 2005-10-18 基板支持・搬送用トレイ WO2006043531A1 (ja)

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US7780440B2 (en) 2010-08-24
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