KR100582481B1 - 전자 디바이스 재료의 제조 방법 - Google Patents
전자 디바이스 재료의 제조 방법 Download PDFInfo
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- KR100582481B1 KR100582481B1 KR1020037009815A KR20037009815A KR100582481B1 KR 100582481 B1 KR100582481 B1 KR 100582481B1 KR 1020037009815 A KR1020037009815 A KR 1020037009815A KR 20037009815 A KR20037009815 A KR 20037009815A KR 100582481 B1 KR100582481 B1 KR 100582481B1
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- Prior art keywords
- electronic device
- film
- sio
- insulating film
- substrate
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- 238000000034 method Methods 0.000 title claims abstract description 89
- 239000000463 material Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 claims abstract description 75
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- 239000000758 substrate Substances 0.000 claims description 50
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- 239000010703 silicon Substances 0.000 claims description 19
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052743 krypton Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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Abstract
Description
Claims (27)
- 전자 디바이스용 기판과, 이 기판 상에 배치된 절연막을 포함하는 피처리 기체를, 복수의 슬롯이 있는 평면 안테나 부재를 통한 마이크로파 조사에 기초하여 처리 가스로부터 생성한 플라즈마에 노출시켜, 상기 절연막을 개질하는 공정을 포함하는 것인 전자 디바이스 재료의 제조 방법.
- 제1항에 있어서, 상기 전자 디바이스용 기판은 반도체 재료인 것인 전자 디바이스 재료의 제조 방법.
- 제1항 또는 제2항에 있어서, 상기 전자 디바이스용 기판은 단결정 실리콘을 주성분으로 하는 기판인 것인 전자 디바이스 재료의 제조 방법.
- 제1항 또는 제2항에 있어서, 상기 전자 디바이스용 기판은 액정 디바이스 재료인 것인 전자 디바이스 재료의 제조 방법.
- 제1항 또는 제2항에 있어서, 상기 절연막은 CVD에 의해 형성된 절연막인 것인 전자 디바이스 재료의 제조 방법.
- 제1항 또는 제2항에 있어서, 상기 처리 가스는 희가스와, 산소(O2)와 질소(N2) 중 하나 이상과, 수소(H2)를 함유하는 것인 전자 디바이스 재료의 제조 방법.
- 제6항에 있어서, 상기 희가스는 크립톤, 아르곤 또는 헬륨인 것인 전자 디바이스 재료의 제조 방법.
- 제7항에 있어서, 상기 처리 가스는 유량 1∼1000 sccm의 O2; 유량 200∼3000 sccm의 크립톤, 헬륨, 크세논 또는 아르곤; 및 유량 1∼200 sccm의 수소를 함유하는 가스인 것인 전자 디바이스 재료의 제조 방법.
- 제1항 또는 제2항에 있어서, 상기 절연막은 산화실리콘(SiO2) 막이고, 이 절연막의 개질은 실온∼700℃의 온도 하에서 행해지는 것인 전자 디바이스 재료의 제조 방법.
- 제1항 또는 제2항에 있어서, 상기 절연막은 SiO2막이고, 이 절연막의 개질은 20∼5000 mTorr의 압력 하에서 행해지는 것인 전자 디바이스 재료의 제조 방법.
- 제1항 또는 제2항에 있어서, 상기 플라즈마는 0.5∼5 W/cm2의 출력으로 형성되는 것인 전자 디바이스 재료의 제조 방법.
- 전자 디바이스용 기판과, 이 기판 상에 배치된 제1 SiO2막과, 이 제1 SiO2막 상에 배치된 제1 다결정 실리콘층과, 이 제1 다결정 실리콘층 상에 배치된 제2 SiO2막을 적어도 포함하는 피처리 기체를, 복수의 슬롯이 있는 평면 안테나 부재를 통한 마이크로파 조사에 기초하여 처리 가스로부터 생성한 플라즈마에 노출시켜, 상기 제2 SiO2막을 개질하는 공정을 포함하는 것인 전자 디바이스 재료의 제조 방법.
- 제12항에 있어서, 상기 제2 SiO2막 상에 제2 다결정 실리콘층을 형성하는 것인 전자 디바이스 재료의 제조 방법.
- 제12항 또는 제13항에 있어서, 상기 제1 다결정 실리콘층과 제2 SiO2막 중 하나 이상이 CVD에 의해 형성되는 것인 전자 디바이스 재료의 제조 방법.
- 제13항에 있어서, 상기 제2 다결정 실리콘층은 CVD에 의해 형성되는 것인 전자 디바이스 재료의 제조 방법.
- 제12항 또는 제13항에 있어서, 상기 제1 다결정 실리콘층 상의 제2 SiO2막은 CVD에 의해 형성되는 것인 전자 디바이스 재료의 제조 방법.
- 제12항 또는 제13항에 있어서, 상기 전자 디바이스용 기판은 반도체 재료인 것인 전자 디바이스 재료의 제조 방법.
- 제12항 또는 제13항에 있어서, 상기 전자 디바이스용 기판은 단결정 실리콘을 주성분으로 하는 기판인 것인 전자 디바이스 재료의 제조 방법.
- 제12항 또는 제13항에 있어서, 상기 전자 디바이스용 기판은 액정 디바이스 재료인 것인 전자 디바이스 재료의 제조 방법.
- 제12항 또는 제13항에 있어서, 상기 제1 다결정 실리콘층을 형성하는 공정과 상기 제1 다결정 실리콘층 상에 제2 SiO2막을 형성하는 공정과의 사이에, 상기 피처리 기체를, 복수의 슬롯이 있는 평면 안테나 부재를 통해 처리 가스에 마이크로파를 조사함으로써 생성한 플라즈마에 노출시키고, 이 플라즈마를 이용하여 상기 제1 또는 제2 다결정 실리콘층을 개질하는 공정을 더 포함하는 것인 전자 디바이스 재료의 제조 방법.
- 전자 디바이스용 기판과, 이 기판 상에 배치된 절연막을 적어도 포함하는 피처리 기체를, 복수의 슬롯이 있는 평면 안테나 부재를 통해 처리 가스에 마이크로파를 조사함으로써 생성한 플라즈마에 노출시키고, 이 플라즈마를 이용하여 상기 절연막을 개질하는 공정과, 상기 절연막 상에 금속층을 형성하는 공정을 포함하는 것인 전자 디바이스 재료의 제조 방법.
- 제21항에 있어서, 상기 절연막은 CVD에 의해 형성되는 것인 전자 디바이스 재료의 제조 방법.
- 제21항 또는 제22항에 있어서, 상기 전자 디바이스용 기판은 Si를 주성분으로 하는 것인 전자 디바이스 재료의 제조 방법.
- 제21항 또는 제22항에 있어서, 상기 절연막은 SiO2, 실리콘산질화막(Si0N), 질화실리콘(SiN), 산화알루미늄(Al2O3), 산화지르코늄(ZrO2), 산화하프늄(HfO2), 실리케이트, 알루미네이트로 이루어진 군에서 선택되는 1 또는 2 이상인 것인 전자 디바이스 재료의 제조 방법.
- 제24항에 있어서, 상기 실리케이트는 ZrSi0 혹은 HfSiO의 조성을 갖는 실리케이트인 것인 전자 디바이스 재료의 제조 방법.
- 제12항 또는 제13항에 있어서, 상기 제2 다결정 실리콘층을 형성한 후에, 상기 피처리 기체를, 복수의 슬롯이 있는 평면 안테나 부재를 통해 처리 가스에 마이크로파를 조사함으로써 생성한 플라즈마에 노출시키고, 이 플라즈마를 이용하여 상기 제1 또는 제2 다결정 실리콘층을 개질하는 공정을 더 포함하는 것인 전자 디바이스 재료의 제조 방법.
- 제24항에 있어서, 상기 알루미네이트는 ZrAlO 혹은 HfAlO의 조성을 갖는 알루미네이트인 것인 전자 디바이스 재료의 제조 방법.
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2002
- 2002-01-25 JP JP2002560186A patent/JP4334225B2/ja not_active Expired - Lifetime
- 2002-01-25 US US10/470,198 patent/US6897149B2/en not_active Expired - Fee Related
- 2002-01-25 DE DE60238389T patent/DE60238389D1/de not_active Expired - Lifetime
- 2002-01-25 WO PCT/JP2002/000571 patent/WO2002059956A1/ja active IP Right Grant
- 2002-01-25 CN CNB028041542A patent/CN100347832C/zh not_active Expired - Fee Related
- 2002-01-25 KR KR1020037009815A patent/KR100582481B1/ko active IP Right Grant
- 2002-01-25 KR KR1020057025306A patent/KR100639147B1/ko active IP Right Grant
- 2002-01-25 CN CN2009102534267A patent/CN101752244B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
JPWO2002059956A1 (ja) | 2004-05-27 |
EP1361606B1 (en) | 2010-11-24 |
CN1489784A (zh) | 2004-04-14 |
KR20030091973A (ko) | 2003-12-03 |
KR20060009395A (ko) | 2006-01-31 |
CN100585814C (zh) | 2010-01-27 |
US20070218687A1 (en) | 2007-09-20 |
CN1691290A (zh) | 2005-11-02 |
WO2002059956A1 (fr) | 2002-08-01 |
US20040048452A1 (en) | 2004-03-11 |
CN101752244A (zh) | 2010-06-23 |
US6897149B2 (en) | 2005-05-24 |
DE60238389D1 (de) | 2011-01-05 |
US20050176263A1 (en) | 2005-08-11 |
US7217659B2 (en) | 2007-05-15 |
CN100347832C (zh) | 2007-11-07 |
JP2010062576A (ja) | 2010-03-18 |
CN101752244B (zh) | 2012-02-08 |
KR100639147B1 (ko) | 2006-10-31 |
EP1361606A4 (en) | 2005-06-29 |
JP4334225B2 (ja) | 2009-09-30 |
KR20060006109A (ko) | 2006-01-18 |
JP4917142B2 (ja) | 2012-04-18 |
EP1361606A1 (en) | 2003-11-12 |
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