KR20060006109A - 플라즈마 처리 방법 - Google Patents
플라즈마 처리 방법 Download PDFInfo
- Publication number
- KR20060006109A KR20060006109A KR1020057025306A KR20057025306A KR20060006109A KR 20060006109 A KR20060006109 A KR 20060006109A KR 1020057025306 A KR1020057025306 A KR 1020057025306A KR 20057025306 A KR20057025306 A KR 20057025306A KR 20060006109 A KR20060006109 A KR 20060006109A
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- South Korea
- Prior art keywords
- film
- plasma
- gas
- sio
- insulating film
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- 238000003672 processing method Methods 0.000 title claims 11
- 238000000034 method Methods 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000007789 gas Substances 0.000 claims description 103
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 82
- 238000012545 processing Methods 0.000 claims description 70
- 230000008569 process Effects 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052743 krypton Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
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- 239000000203 mixture Substances 0.000 claims description 5
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- 150000004645 aluminates Chemical class 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 2
- 229910003855 HfAlO Inorganic materials 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 41
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- 238000010438 heat treatment Methods 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 238000012986 modification Methods 0.000 description 9
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
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- 238000009413 insulation Methods 0.000 description 5
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- 229910000077 silane Inorganic materials 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
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- 239000002019 doping agent Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- 238000000206 photolithography Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- 229910006411 Si—Si Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
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- 150000004760 silicates Chemical class 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
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- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
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- 238000007429 general method Methods 0.000 description 1
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
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- 238000005121 nitriding Methods 0.000 description 1
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- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
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- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
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Abstract
Description
Claims (13)
- 기판 상에 절연막을 형성하는 공정과,안테나 부재를 통한 마이크로파 조사에 기초하여 처리 가스로부터 생성한 플라즈마에 노출시켜, 상기 절연막을 개질하는 공정을 포함하는 플라즈마 처리 방법으로서,상기 처리 가스가 희가스와, 산소, 질소 및 수소 중 적어도 하나를 포함하는 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 절연막은 SiO2 막인 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 희가스는 크립톤, 아르곤 또는 헬륨인 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 처리 가스는 유량 1∼1000 sccm의 O2; 유량 200∼3000 sccm의 크립톤, 헬륨, 크세논 및 아르곤 중 적어도 하나; 및 유량 1∼200 sccm의 수소를 함유하는 가스인 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 절연막은 실온∼700℃의 온도에서 개질되는 것인 플라 즈마 처리 방법.
- 제1항에 있어서, 상기 절연막은 20∼5000 mTorr의 압력에서 개질되는 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 플라즈마는 0.5∼5 W/cm2의 출력으로 형성되는 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 플라즈마는 0.5~2 eV의 전자 온도를 가지는 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 플라즈마는 1 x 1010~5 x 1012 / cm3 의 밀도를 가지는 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 절연막은 SiO2, 실리콘산질화막, 질화실리콘, 산화알루미늄, 산화지르코늄, 산화하프늄, 실리케이트, 알루미네이트로 이루어진 군에서 선택되는 1 또는 2 이상인 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 절연막은 ZrSi0 혹은 HfSiO의 조성을 갖는 실리케이트 를 포함하거나 또는 상기 절연막은 ZrAlO 혹은 HfAlO의 조성을 갖는 알루미네이트를 포함하는 것인 플라즈마 처리 방법.
- 제1항에 있어서, 상기 안테나는 평면 안테나인 것인 플라즈마 처리 방법.
- 제12항에 있어서, 상기 평면 안테나는 복수 개의 슬롯을 가지는 것인 플라즈마 처리 방법.
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JPJP-P-2001-00017664 | 2001-01-25 |
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KR1020057025305A KR20060009395A (ko) | 2001-01-25 | 2002-01-25 | 기판의 처리 방법 |
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KR1020057025305A KR20060009395A (ko) | 2001-01-25 | 2002-01-25 | 기판의 처리 방법 |
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EP (1) | EP1361606B1 (ko) |
JP (2) | JP4334225B2 (ko) |
KR (3) | KR100639147B1 (ko) |
CN (3) | CN100347832C (ko) |
DE (1) | DE60238389D1 (ko) |
WO (1) | WO2002059956A1 (ko) |
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KR101250057B1 (ko) * | 2008-02-08 | 2013-04-03 | 도쿄엘렉트론가부시키가이샤 | 절연막의 플라즈마 개질 처리 방법 및 플라즈마 처리 장치 |
KR20170141117A (ko) * | 2016-06-14 | 2017-12-22 | 도쿄엘렉트론가부시키가이샤 | 질화 규소막의 처리 방법 및 질화 규소막의 형성 방법 |
WO2023146076A1 (ko) * | 2022-01-26 | 2023-08-03 | 김남헌 | 웨이퍼 식각을 위한 플라즈마 챔버 및 플라즈마 챔버를 이용한 웨이퍼 식각 방법 |
WO2024085410A1 (ko) * | 2022-10-21 | 2024-04-25 | 주식회사 나이스플라즈마 | 플라즈마 챔버 및 플라즈마 챔버를 이용한 웨이퍼 식각 방법 |
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US20070218687A1 (en) | 2007-09-20 |
CN100347832C (zh) | 2007-11-07 |
CN101752244B (zh) | 2012-02-08 |
JP2010062576A (ja) | 2010-03-18 |
JP4334225B2 (ja) | 2009-09-30 |
WO2002059956A1 (fr) | 2002-08-01 |
US20040048452A1 (en) | 2004-03-11 |
DE60238389D1 (de) | 2011-01-05 |
EP1361606B1 (en) | 2010-11-24 |
CN101752244A (zh) | 2010-06-23 |
KR20030091973A (ko) | 2003-12-03 |
KR100639147B1 (ko) | 2006-10-31 |
CN1489784A (zh) | 2004-04-14 |
KR20060009395A (ko) | 2006-01-31 |
JP4917142B2 (ja) | 2012-04-18 |
US20050176263A1 (en) | 2005-08-11 |
EP1361606A1 (en) | 2003-11-12 |
JPWO2002059956A1 (ja) | 2004-05-27 |
CN100585814C (zh) | 2010-01-27 |
US6897149B2 (en) | 2005-05-24 |
US7217659B2 (en) | 2007-05-15 |
EP1361606A4 (en) | 2005-06-29 |
CN1691290A (zh) | 2005-11-02 |
KR100582481B1 (ko) | 2006-05-23 |
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