CN101495668A - 晶片支撑销组件 - Google Patents

晶片支撑销组件 Download PDF

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Publication number
CN101495668A
CN101495668A CNA2006800024705A CN200680002470A CN101495668A CN 101495668 A CN101495668 A CN 101495668A CN A2006800024705 A CNA2006800024705 A CN A2006800024705A CN 200680002470 A CN200680002470 A CN 200680002470A CN 101495668 A CN101495668 A CN 101495668A
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CN
China
Prior art keywords
pin
substrate support
supporting
downside
pedestal
Prior art date
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Pending
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CNA2006800024705A
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English (en)
Inventor
K·丰杜鲁力亚
C·怀特
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ASM America Inc
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ASM America Inc
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Publication date
Application filed by ASM America Inc filed Critical ASM America Inc
Publication of CN101495668A publication Critical patent/CN101495668A/zh
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract

本发明公开了一种半导体晶片支撑销组件。基座具有至少三个支撑销，其被配置以将晶片提升至基座顶部表面的上方。各支撑销包括上销和下销，上销和下销通过卡口座形式的快卸机构相互锁定。上销由非金属材料制成，诸如聚苯并咪唑。基座由电机或气压缸驱动的提升机构上下驱动。基座相对支撑销上下移动。

Description

晶片支撑销组件
相关引用
【0001】本申请要求享有2005年1月18日提交的美国临时专利申请第60/645,581号以及2005年2月24日提交的美国临时专利申请第60/656,832号的优先权。
技术领域
【0002】本发明领域主要涉及半导体制造，更具体地，涉及用于加工半导体衬底的半导体衬底支座。
背景技术
【0003】半导体加工步骤一般采用各种加工工具。加工工具包括沉积设备、光蚀刻设备以及抛光设备等。即使不是全部，多数设备使用衬底固定机构来固定半导体衬底以进行加工。一些衬底支座或支架具有多个(优选为至少三个)从衬底支座的顶部表面轴向向上延伸的支撑销。加工期间，支撑销可为固定使用，或者支撑销为顶销(lift pin)，其被配置为从衬底支座的顶部表面提升半导体衬底或降低半导体衬底至衬底支座的顶部表面。支撑销的顶部表面配置为接触半导体衬底的下表面或底部表面(背面)。加工(如沉积、抛光等)通常在半导体衬底的顶部表面或上表面进行。
【0004】许多半导体加工设备为单晶片加工类型设备，其在反应腔内具有衬底支架。通常在衬底支架或基座上加热衬底时，进行加工衬底或晶片。单晶片加工类型设备中的典型基座包含由导热率高的金属或陶瓷制成的盘形主体，基座内也可具有内置加热元件，诸如电热器。
【0005】衬底背面的某些区域在一个或多个加工步骤期间和/或之后可能遭受颗粒污染。这样的污染可导致或造成衬底中瑕疵。颗粒也会污染反应腔内的加工环境，这可能又会污染腔内正被加工的衬底。
【0006】组装衬底支架时有时会产生颗粒。例如，具有支撑销的衬底支架通常需要使用手动工具(如扳手)以进行组装，这增加了颗粒的产生。支撑销组件中所使用的材料也可造成销和导向装置的磨损，这也会增加颗粒。在支撑销的销头和主体间常常具有螺纹接口。这种螺纹设计通常要求真空排气孔以释放因加工压力的增加而产生的销头和销主体间螺纹连接内不希望有的残留气体。不幸的是，这些排气孔是颗粒及污染的潜在聚集处。此外，由于金属会释放半导体加工中希望有的金属污染物，金属制造的销头是不理想的。一些支撑销由钛形成，这可能要求在钛销上具有氧化铝钝化层，以保护钛并为衬底产生钝化表面。
【0007】衬底支架用于沉积腔中，如化学气相沉积(CVD)和原子层沉积(ALD)腔。ALD加工提供了保形沉积层的优点。然而，ALD加工存在特定问题，诸如需要顺序自饱和脉冲。在ALD加工中，重要的是在时间和空间上分离反应物，以避免会破坏ALD保形优点的类似CVD的反应。例如，在ALD加工中，来自一脉冲的残留气体可从聚集处泄漏或散开，并与另一脉冲发生反应，产生来自于类似CVD的反应的颗粒与不均匀性。
【0008】如上所述，对工具的需要，以及对衬底支架部件材料的选择，增加了衬底支架制造与组装的复杂性。
发明内容
【0009】根据本发明的一方面，提供了用于加工半导体衬底的衬底支架。衬底支架具有从顶部表面延伸至底部表面的多个开口。衬底支架包括多个支撑销。多个支撑销中的每个支撑销可滑动地安装于多个开口之一中。多个支撑销中的每个支撑销包括上销和下销。上销通过卡口座与下销啮合。
【0010】根据本发明的另一方面，提供了组装具有多个支撑结构的半导体衬底支架的方法。提供了具有多个从顶部表面延伸至底部表面的孔的基座。上销穿过多个孔中的每个孔，各上销通过旋转上销和下销之一小于约360度，啮合上销下方的下销。
【0011】根据本发明的又一方面，提供了用于加工半导体衬底的加工工具。加工工具包含基座、提升机构以及加热器。基座具有多个从顶部表面延伸至底部表面的多个开口。基座包含多个支撑销，其中多个支撑销中的每个支撑销可滑动地安装于多个开口之一中，多个支撑销中的每个支撑销包含上销和下销，其中上销通过快卸机构与下销啮合。提升机构被配置以提升或降低基座。衬底支架安装于加热器上方。
【0012】根据本发明的另一方面，提供了可滑动地安装于晶片支架开口内、用于半导体加工的晶片支撑销。支撑销包含具有扩大销头的上销和从销头向下延伸的上销轴。下销被配置以通过卡口座与上销啮合。
附图说明
【0013】通过以下描述以及附图，本发明的这些和其他方面将变得显而易见的，附图(不按比例)意在阐述而非限制本发明，其中：
【0014】图1A是具有支撑销的衬底支架的实施例的透视及局部横截面图。
【0015】图1B是具有延伸穿过衬底中的洞的支撑销的衬底支架的实施例的分解仰视透视图。
【0016】图1C是支撑销处于衬底支架中的降低位置的横截面侧视图。
【0017】图1D是实施例的加热器和提升机构的分解透视图。
【0018】图1E是加热器以及从加热器中心向下延伸的轴的透视图。
【0019】图2A是支撑销的上销部分的侧视图。
【0020】图2B是图2A中所示的上销部分连接器的详细视图。
【0021】图2C是图2A所示的上销部分旋转90度的侧视图。
【0022】图3A是支撑销的下销部分的透视图。
【0023】图3B是图3A中所示的下销部分旋转90度的透视图。
【0024】图3C是图3A中所示的下销部分的侧视图。
具体实施方式
【0025】优选实施例和方法的下列详细描述为帮助理解权利要求而给出了对某些具体实施例的描述。然而，本发明可在权利要求限定并涵盖的范围内以多种不同实施方式和方法实现。例如，优选实施例的快拆连接机构是卡口机构，熟练技术人员会意识到：其他快拆机构可为手动操作，没有螺纹螺钉或螺栓。
【0026】更具体地参照阐释性的附图，本发明体现于附图中大致所示的装置中。可以意识到：设备可在结构及部件的细节上变化，方法可在具体步骤和顺序上变化，而不脱离本说明书中所公开的基本思想。
【0027】在ALD加工中，气体输送用于保持反应物分离。ALD中的反应物不是如CVD反应中那样混合。此外，ALD腔中，为间隔顺序脉冲输送反应物的控制设定为其间有移除或清除步骤。温度通常维持在100℃和150℃之间，取决于反应物，以确保自饱和吸收和反应，以使得每周期沉积少于约一单分子层。
【0028】图1A-1C示出了一实施例。如图1A所示，衬底支架(如基底或卡盘)110被配置以支撑其上的衬底(未示出)。衬底支架110优选地具有至少三个可滑动安装于衬底支架110中的支撑销开口或孔130中的支撑结构或销120。一般希望最小化支撑销120的数量以减少衬底支架110的机械复杂性。在优选实施例中，衬底支架110具有三个支撑销120，各自绕衬底支架110在径向方向120度隔开(见图1D和1E)布置。熟练技术人员会理解，支撑销120可布置于靠近衬底支架110的中心，或更靠近边缘。在图1D和1E所阐释的实施例中，支撑销120布置在衬底支架110的中心与边缘间的大致中间位置。支撑销120确定了衬底的支撑平台，使衬底于衬底支架110上方留有间隔。在优选实施例中，衬底支架110由钛制成。在替代性实施例中，衬底支架110可由不锈钢、铝、硅、氧化铝(陶瓷)、镍、镍合金(如
Figure A20068000247000121
)等制成。
【0029】在所阐释的实施例中，衬底支架110安装于加热器135上方。加热器135连接至衬底支架110中心的轴180(见图1D和1E)。轴180由电机驱动的导螺杆上下驱动，下文将对其进行详述。如图1A-1C所示，开口130延伸穿过衬底支架110和加热器135。
【0030】通过在装载或卸载期间使用支撑销120将衬底提升至衬底支架110的顶部表面上方，机器人或晶片处理手臂不接触衬底支架110的顶部表面，从而使损害衬底和衬底支架110的可能性最小化。熟练技术人员会意识到：支撑销120允许使用运输叉和操作杆以到达衬底的下侧，装载或卸载衬底。使用支撑销120以进行衬底装载/卸载也避免了衬底因吸力难以取出的粘结问题和在脱离时在残留气体上滑动的问题。
【0031】如图1A所示，椭圆连接器140布置在加热器135和支撑销120下方。椭圆连接器140优选地螺纹连接至固定于加工腔地板的底座160。衬底支架110由提升机构170(如发动机或空气气压缸)(见图1D)提升或下降，以通过电力或气动上下驱动衬底支架110。在优选实施例中，提升机构170由连接至电机的导螺杆驱动。熟练技术人员会理解，在某些实施例中，提升机构由气动驱动器驱动。
【0032】如图1B的分解透视图以及图1C的侧面横截面图所示，衬底支架110具有对准的支撑销开口或孔130，其从支架110的顶部表面至加热器135的底部表面延伸穿过衬底支架110。开口130中的每个开口优选地具有从约6mm至10mm的直径。支撑销120可滑动地安装于开口130中的每个开口中，并被配置为提升和/或降低衬底。如图1C所示，布置支撑销120中的每个支撑销以在开口120内滑动。当装载衬底至衬底支架110或从衬底支架110卸载衬底时，滑动安装的支撑销120穿过衬底支架110中的开口130上升，并且提升或降低衬底，下文将对其进行详述。
【0033】每个支撑销120优选地具有大致为柱形表面的销头120A，当降低时，销头120A位于衬底支架110的上部中的凹槽130A内，如图1C最佳所示。销头120A的直径优选地大于支撑销120的主体120B的直径。支撑销120主体120B的直径优选稍小于开口130的直径，以使得支撑销120可在开口130内滑动而不会因与开口130的内壁接触而造成磨损。支撑销120可相对衬底支架110提升和/或降低，以提升或降低衬底。
【0034】在图1A-1C、2A和2C所示的实施例中，支撑销120具有稍有锥度(朝向销轴或主体120B宽度逐渐减少)销头120A。如图1C所示，销头120A降低时回退所进入的衬底支架110的凹槽或开口130A也为锥形。在所阐释的实施例中，因为凹槽130A为锥形，并且销头120A的配合面也为锥形，销头120A的配合面与凹槽130A的表面相配合以抑制通过开口130的气流。熟练技术人员会理解，抑制通过开口的气流使得衬底背面污染的风险最小化。
【0035】熟练技术人员会意识到：可以锥形表面形成支撑销头120，该锥形表面可在降低位置与凹槽130A的相应形状的锥形表面相配合，如所阐释的实施例中所示。替代性地，凹槽130A的表面可形成为与柱形销头120A相配合。
【0036】如图1B和1C中所示，各支撑销120包括上销122和下销124，他们优选地通过卡口座啮合。上销和下销122、124由技术人员相对旋转时，上销和下销122、124优选地相互啮合并锁定在一起，旋转优选地小于360度，并且，诸如压缩弹簧的压缩弹簧机构128偏置分开上销和下销122、124。优选地，旋转小于180度，在所阐释的实施例中，约为90度。
【0037】图2A是上销122的侧视图，图2C是图2A中所示的上销旋转90度的侧视图。如图2A-2C所示，上销122具有连接器125，其被配置为啮合下销124中的槽127和沟129(见图3A和3B)。图2B是图2A中圆A中的连接器125的详细视图。
【0038】图3A和图3B为下销124的透视图，图3B为图3A透视图旋转90度的透视图。图3C是下销124的侧视图。熟练技术人员会理解，在连接器125被插入槽127后(通过推动上销和下销122、124，压缩弹簧128)、优选地旋转上销122或下销124约90度时，上销122被偏置远离下销124。旋转约90度后，连接器125被弹簧128偏置以靠在下销124上的槽129的上表面。压缩弹簧128保持上销122和下销124锁定到位(见图1C)。在该旋转位置，上销122不能与下销124分开，除非逆着弹簧128的阻力向下将上销122推出槽129并反转90度以释放弹簧128。熟练技术人员可以理解，在此实施例中，不需要工具接合上销和下销122、124，并且快拆机构(卡口座)和弹簧消除了对上销和下销122、124间螺纹接口的需要，从而减少不希望有的颗粒产生，并极大简化了安装与替换。
【0039】上销122优选地具有扩大的销头120A，如图1A-1C、2A和2C所示，并优选地由非晶态聚合物PBI(聚苯并咪唑)材料制成，诸如
Figure A20068000247000151
其为美国北卡罗来纳州夏洛特市PBI PerformanceProducts公司的商标，并且可从美国宾夕法尼亚州里丁市QuadrantEngineering Plastic Products of Reading公司商业上获得。由于具有高耐温性，PBI材料较为理想。由PBI材料制成的上销122提供了非金属销头120A，避免了销头120A在衬底背面的金属污染。PBI销头120A也消除了对氧化铝钝化层的需要。下销124也优选地由PBI材料制成。用于下销124的替代性非金属材料包括但不限于陶瓷(例如氧化铝)和工程塑料，诸如Torlon、Semitron、Peek、Ultem、Vespel以及Ertalyte。下销也可为诸如钛或不锈钢的金属。
【0040】在所阐释的实施例中，下销124被配置为与压缩弹簧128啮合，如图1B和1C所示。连接装置131(诸如所阐释的实施例中的定位螺丝)被提供，以在安装之前将压缩弹簧128固定在下销124中的适当位置。如图1C所示，压缩弹簧128适配进入下销124的中心孔中。
【0041】如上所示，当衬底支架110由提升机构170向下驱动时，支撑销120被配置为提升至衬底支架110的顶部表面上方，衬底支架110被向上驱动时，支撑销120位于凹槽130A内。如上所述，提升机构170，如发动机或空气气压缸，通过电力或气动上下驱动衬底支架110。在优选实施例中，提升机构170由连接至电机的导螺杆驱动。熟练技术人员会理解，在某些实施例中，提升机构由气动驱动器驱动。
【0042】如图1A所示，在优选实施例中，椭圆连接器140相对加工腔保持静止。(用于调节并紧固椭圆连接器140和底座160之间连接的)锁紧螺母150位于椭圆连接器140和底座160之间。为从衬底支架110的顶部表面上方的“提升”位置降低支撑销120，提升机构170向上驱动衬底支架110。最初，随着衬底支架110上移，弹簧126偏置(相对平台或连接器140保持静止的)支撑销120使其缩回或“降低”至衬底支架110的凹槽130A内。销头120A位于沉头凹槽130A中，并且不能相对衬底支架110进一步降低，同时密封孔130不让反应气体进出。随着衬底支架110的继续上移以密封加工室，销120与衬底支架110一起移动。
【0043】为从位于凹槽130A中的“降低”位置提升支撑销120，图1D所示提升机构170向下驱动衬底支架110。最初，随着加工室的打开，(由弹簧126偏置于缩回位置的)支撑销120与衬底支架110一起下移。持续下移导致每个支撑销120的底部表面接触椭圆连接器140。支撑销120与椭圆连接器140的接触压缩支撑销120下部周围的弹簧126，如图1A-1C所示。随着提升机构170向下驱动衬底支架110时弹簧126受压，弹簧126获得的恢复力有助于下一次衬底支架110提升时销120的相对“降低”。因此，弹簧126与由椭圆连接器140为销下移提供的平台或“地板”的组合，允许销在衬底支架110上下移动时相对衬底支架110移动，而无需相对由连接器140形成的平台固定销，也允许使用更短的销120。销120的固定会避免销120相对于腔的横向运动，并且避免了装载和卸载期间衬底支架110横向运动的情况下、销破损的风险。在所阐释的配置中，销120会随衬底支架110的任何微小横向移动而横向移动。
【0044】图1D是加热器135和提升机构170的分解透视图。图1E是加热器135和从加热器135的中心向下延伸的轴180的透视图。如图1D所示，加热器135安装至提升机构170。在阐释性实施例中，轴180适配安装在提升机构170的波纹管组件190内，并在波纹管组件190的内底座处安装至提升机构170。提升机构170优选地固定于加工腔的底板。熟练技术人员会理解，波纹管组件190在加工腔的底部产生密封。
【0045】支撑销120被降低时，支撑销120收回，以使得支撑销120的销头120A位于支撑销开口130的凹槽130A内，并且支撑销120的顶部表面稍微凹入衬底所安装至的衬底支架110的顶部表面(或在其他实施例中，与衬底支架110的顶部表面齐平)，以使得衬底可放置在衬底支架110上。
【0046】图1C示出了退入凹槽130A的支撑销120。优选地，支撑销头120A紧贴凹槽130A并形成密封，以使得反应气体不能流入、流经开口或孔130，反应气体在开口或孔130可能聚集并污染衬底背面；或者以使得反应气体不能散开并与其他反应气体混合而以CVD产生的颗粒和不均匀性污染晶片。各支撑销头120A优选地配合相应开口130的凹槽130A的表面，以抑制衬底加工期间流经衬底支架110中开口130的气流，避免衬底背面的污染。此外，在一些实施例中，衬底支架110齐平的顶部表面为衬底的均匀加工提供了均匀(如均匀受热)的衬底支撑面。可以理解，在衬底加工期间支撑销120通常处于“降低”位置。支撑销120相对于衬底支架110处于降低位置时，附加的弹簧126靠着衬底支架110的凹槽130A的下表面拉动销头120A，以提供密封。
【0047】图1所示的支撑销头120A的设计和相应的沉头凹槽130A也在它们降低时、为支撑销120提供了降低时的终点，以使得其可预知地降低至衬底支架110中的正确位置，在此位置，销头120A的顶部与衬底支架110的上表面齐平。因而，支撑销120降低时，其为衬底支架110提供了可预知的齐平上表面，该齐平上表面会均匀加热衬底，如上所述。
【0048】在“提升位置”，支撑销120优选地在衬底支架110的上表面上方留有约0.100至约1.0英寸的范围的间隔，约0.2至约0.8英寸的范围更佳，离衬底支架110顶部表面高度约0.60英寸(15mm)甚至更佳。
【0049】在所阐释的实施例中，衬底支架110被加热，例如由衬底支架110下方的电阻加热器135加热。在其它实施例中，衬底支架110可由安装于反应腔外的辐射加热器辐射加热。在该辐射加热的实施例中，多个辐射热灯优选地绕反应室外排列，以加热衬底并催化衬底上的化学沉积。在一些实施例中，一组上加长热灯可排列在反应腔的上壁外，并且一组下加长热灯可与上灯组交叉排列。在一些实施例中，集中阵列的热灯的可从衬底支架110的下方指向上方。该灯排列可用于CVD腔，该CVD腔商业上可从亚利桑那州菲尼克斯市ASM，America，Inc的EPSILON商标下的AZ获得。
【0050】在一些实施例中，衬底支架110可旋转，以在加工衬底期间旋转衬底。衬底支架110的旋转优选地由连接至旋转轴的旋转驱动装置驱动，该旋转轴从衬底支架110和加热器135延伸。熟练技术人员会意识到：在加工期间旋转衬底有助于确保加热和反应气体分布的均匀性，从而提高所加工的衬底的均匀性。
【0051】可以理解，可使用支撑销的快卸机构轻松组装本说明书中所描述的实施例。通过在将衬底支架110放入加工腔之后、将将上销122插入下销并旋转，技术人员组装衬底支架110和支撑销120装置。熟练技术人员会意识到，不必使用工具来组装衬底支架110中的支撑销120。组装过程中省去工具减少了支撑销120和开口130的磨损造成的颗粒数量。此外，所阐释的实施例中的销头120A避免了衬底上的金属接触，并密封了开口的潜在聚集位置。
【0052】尽管已经以优选实施例和实例公开了本发明，本领域技术人员会理解：本发明不限于具体公开的实施例，而是包括其他替代性实施例和/或对本发明的使用以及对其的明显修改。因而，本说明书中所公开的本发明的范围不应受到上述公开的特定实施例的限制，而应仅由对所附权利要求的合理阐释确定。

Claims (54)

1.一种用于加工半导体衬底的衬底支架，所述衬底支架具有多个从顶部表面延伸至底部表面的开口，所述衬底支架包含：
多个支撑销，其中所述多个支撑销中的每个支撑销可滑动地安
装在所述多个开口之一中，所述多个支撑销中的每个支撑销包含：
上销；以及
下销，其中所述上销通过卡口座与所述下销啮合。
2.根据权利要求1所述的衬底支架，其中所述多个支撑销中的每个支撑销由非金属材料制成。
3.根据权利要求2所述的衬底支架，其中所述非金属材料为聚苯并咪唑。
4.根据权利要求2所述的衬底支架，其中所述非金属材料为陶瓷。
5.根据权利要求1所述的衬底支架，进一步包含被配置以提升或降低所述衬底支架的提升机构。
6.根据权利要求5所述的衬底支架，其中所述提升机构由电机驱动。
7.根据权利要求5所述的衬底支架，其中所述提升机构由气压缸驱动。
8.根据权利要求5所述的衬底支架，其中所述支撑销，在所述衬底支架被提升或降低时，被配置以相对于所述衬底支架竖直移动。
9.根据权利要求8所述的衬底支架，被配置以使得当所述衬底支架被降低时，所述多个支撑销中的每个支撑销的所述上销提升至所述衬底支架顶部表面的上方。
10.根据权利要求8所述的衬底支架，被配置以使得当所述衬底支架被提升时，所述多个支撑销中的每个支撑销的所述上销收回进入所述多个开口之一中。
11.根据权利要求10所述的衬底支架，进一步包含弹簧，该弹簧被配置以可相对于所述衬底支架向下偏置所述支撑销。
12.根据权利要求1所述的衬底支架，其中所述衬底支架安装于加热器上方。
13.根据权利要求1所述的衬底支架，其中所述衬底支架位于加工腔内，并且所述衬底支架进一步包含所述加热器下方的连接器，其中所述连接器连接至固定至所述加工腔的地板的底座。
14.根据权利要求13所述的衬底支架，其中所述连接器和所述底座通过锁紧螺母连接。
15.根据权利要求1所述的衬底支架，进一步包含辐射加热器，该辐射加热器被配置以加热所述衬底支架。
16.根据权利要求1所述的衬底支架，其中所述多个支撑销中的每个支撑销包含销头，该销头被配置以布置于所述衬底支架的开口内，以使得所述销头的顶部表面低于所述衬底支架的顶部表面。
17.根据权利要求1所述的衬底支架，其中所述多个支撑销中的每个支撑销包含放大销头，该销头被配置以位于所述衬底支架的开口内，以使得所述销头的顶部表面与所述衬底支架的顶部表面基本齐平。
18.根据权利要求1所述的衬底支架，其中所述多个支撑销中的每个支撑销包含销头，该销头被配置以在衬底被提升离开或放到所述衬底支架的所述顶部表面上时，位于所述衬底支架的所述顶部表面上方。
19.根据权利要求1所述的衬底支架，进一步包含所述上销的下表面上的弹簧和连接器，其中所述弹簧被配置以靠着所述下销中的沟偏置所述连接器并且啮合所述下销中的沟，以阻止所述上销相对于所述下销的旋转。
20.根据权利要求19所述的衬底支架，其中所述上销和下销被配置以相对于对方旋转小于180度以进行啮合。
21.根据权利要求19所述的衬底支架，其中所述上销和下销被配置以相对于对方旋转小于360度以进行啮合。
22.一种组装具有多个支撑结构的半导体衬底支架的方法，所述方法包含：
提供具有从顶部表面延伸至底部表面的多个孔的基座；
上销穿过所述多个孔中的每个孔；以及
通过旋转所述上销和所述下销之一小于约360度，所述上销中的每个上销与所述上销下方的下销啮合。
23.根据权利要求22所述的方法，其中通过旋转所述上销和所述下销之一小于约180度，所述上销中的每个上销与下销啮合。
24.根据权利要求22所述的方法，其中通过旋转所述上销和所述下销之一小于约90度，所述上销中的每个上销与下销啮合。
25.根据权利要求22所述的方法，其中所述上销中的每个上销具有位于下表面上的连接器，并且啮合进一步包含：
旋转前，将所述连接器插入所述下销的上表面中的槽，同时压缩位于所述下销下方的弹簧。
26.根据权利要求25所述的方法，其中啮合后，所述连接器被靠着相对于所述槽小于360度布置的沟偏置。
27.根据权利要求26的方法，其中所述槽为竖直，而所述沟为水平。
28.根据权利要求22所述的方法，其中所述上销由聚苯并咪唑制成。
29.根据权利要求22所述的方法，进一步包含在加热器上方安装所述基座。
30.根据权利要求22所述的方法，进一步包含提供被配置以加热所述基座的辐射加热器。
31.根据权利要求22所述的方法，进一步包含将所述基座连接至提升机构，该提升机构被配置以提升或者降低所述基座。
32.根据权利要求31所述的方法，其中当所述提升机构提升所述基座时，所述上销相对于所述基座的所述顶部表面降低。
33.根据权利要求32的方法，其中当所述提升机构降低所述基座时，所述上销相对于所述基座的所述顶部表面提升。
34.根据权利要求31所述的方法，其中当所述衬底支架提升或降低时，所述上销和下销相对于所述衬底支架竖直移动。
35.根据权利要求31所述的方法，其中当所述衬底支架提升时，弹簧相对于所述衬底支架向下偏置所述上销和下销。
36.根据权利要求22所述的方法，其中所述基座和所述上销被配置以相对于对方移动。
37.一种用于加工半导体衬底的加工工具，其包含：
具有从顶部表面延伸至底部表面的的多个开口的基座，所述基座包含多个支撑销，其中所述多个支撑销中的每个支撑销可滑动地安装在所述多个开口之一中，所述多个支撑销中的每个销包含上销和下销，其中所述上销通过快卸机构与所述下销啮合；
提升机构，其被配置以提升或降低所述基座；以及
加热器，其中所述衬底支架安装于所述加热器上方。
38.根据权利要求37所述的加工工具，其中所述加工工具针对原子层沉积配置。
39.根据权利要求37所述的加工工具，其中所述多个支撑销中的每个支撑销由非金属材料制成。
40.根据权利要求39所述的加工工具，其中所述非金属材料为聚苯并咪唑。
41.根据权利要求39所述的加工工具，其中所述非金属材料为陶瓷。
42.根据权利要求39所述的加工工具，其中所述提升机构由电机驱动。
43.根据权利要求37所述的加工工具，其中所述提升机构由气压缸驱动。
44.根据权利要求37所述的加工工具，其中所述基座提升或降低时，所述支撑销被配置以相对于所述衬底支架竖直移动。
45.根据权利要求37所述的加工工具，其中所述基座进一步包含下平台和弹簧，当所述基座提升或降低时，所述弹簧被配置以相对于所述衬底支架竖直移动。
46.根据权利要求37所述的加工工具，其中所述基座位于加工腔内，并且所述基座进一步包含所述加热器下方的连接器，其中所述连接器连接至固定至所述加工腔的地板的底座。
47.根据权利要求46所述的加工工具，其中所述连接器和所述底座通过锁紧螺母连接。
48.根据权利要求37所述的加工工具，其中所述多个支撑销中的每个支撑销包含销头，所述销头被配置以位于开口内，以使得所述销头的顶部表面与所述衬底支架的所述顶部表面基本齐平。
49.根据权利要求37所述的加工工具，其中所述多个支撑销中的每个支撑销包含销头，该销头被配置以在衬底被提升离开或放到所述衬底支架的所述顶部表面上时，位于所述衬底支架的所述顶部表面上方。
50.根据权利要求37所述的加工工具，其中所述快拆机构包含卡口座。
51.根据权利要求50所述的加工工具，进一步所述支撑销中的每个支撑销进一步包含所述上销的下表面上的弹簧和连接器，其中所述弹簧被配置以靠着所述下销中的沟偏置所述连接器并且啮合所述下销中的沟，以阻止所述上销相对于所述下销的旋转。
52.根据权利要求51所述的加工工具，其中所述上销和下销被配置以相对于对方旋转小于180度以进行啮合。
53.根据权利要求51所述的加工工具，其中所述上销和下销被配置以相对于对方旋转小于360度以进行啮合。
54.一种可滑动地安装于晶片支架中的开口内、用于半导体加工的晶片支撑销，所述支撑销包括：
上销，其具有扩大销头的上销和从所述销头向下延伸的上销轴；以及
下销，其被配置以通过卡口座与所述上销啮合。
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