WO2009063755A1 - プラズマ処理装置および半導体基板のプラズマ処理方法 - Google Patents

プラズマ処理装置および半導体基板のプラズマ処理方法 Download PDF

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Publication number
WO2009063755A1
WO2009063755A1 PCT/JP2008/069773 JP2008069773W WO2009063755A1 WO 2009063755 A1 WO2009063755 A1 WO 2009063755A1 JP 2008069773 W JP2008069773 W JP 2008069773W WO 2009063755 A1 WO2009063755 A1 WO 2009063755A1
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WIPO (PCT)
Prior art keywords
plasma processing
semiconductor substrate
region
processing apparatus
plasma
Prior art date
Application number
PCT/JP2008/069773
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English (en)
French (fr)
Inventor
Hirokazu Ueda
Tetsuya Nishizuka
Toshihisa Nozawa
Takaaki Matsuoka
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Tokyo Electron Limited
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Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to US12/743,047 priority Critical patent/US20100279512A1/en
Priority to KR1020107010462A priority patent/KR101203038B1/ko
Priority to JP2009541091A priority patent/JPWO2009063755A1/ja
Priority to CN2008801162237A priority patent/CN101861641B/zh
Publication of WO2009063755A1 publication Critical patent/WO2009063755A1/ja
Priority to US13/668,367 priority patent/US20130065399A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954—Electron temperature measurement
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　プラズマ処理装置１１は、マイクロ波をプラズマ源とし、チャンバー内に相対的にプラズマの電子温度が高い第一の領域２５ａと、第一の領域２５ａよりもプラズマの電子温度が低い第二の領域２５ｂとを形成するようにプラズマを発生させるアンテナ部１３と、半導体基板Ｗを第一の領域２５ａ内に位置させる第一の配置手段と、半導体基板Ｗを第二の領域２５ｂ内に位置させる第二の配置手段と、半導体基板Ｗを第二の領域２５ｂに位置させた状態で、プラズマ発生手段によるプラズマの発生を停止させるプラズマ発生停止手段とを備える。
PCT/JP2008/069773 2007-11-14 2008-10-30 プラズマ処理装置および半導体基板のプラズマ処理方法 WO2009063755A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/743,047 US20100279512A1 (en) 2007-11-14 2008-10-30 Plasma processing apparatus and method for plasma-processing semiconductor substrate
KR1020107010462A KR101203038B1 (ko) 2007-11-14 2008-10-30 플라즈마 처리 장치 및 반도체 기판의 플라즈마 처리 방법
JP2009541091A JPWO2009063755A1 (ja) 2007-11-14 2008-10-30 プラズマ処理装置および半導体基板のプラズマ処理方法
CN2008801162237A CN101861641B (zh) 2007-11-14 2008-10-30 等离子体处理装置以及半导体衬底的等离子体处理方法
US13/668,367 US20130065399A1 (en) 2007-11-14 2012-11-05 Plasma processing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-295278 2007-11-14
JP2007295278 2007-11-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/668,367 Division US20130065399A1 (en) 2007-11-14 2012-11-05 Plasma processing method

Publications (1)

Publication Number Publication Date
WO2009063755A1 true WO2009063755A1 (ja) 2009-05-22

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PCT/JP2008/069773 WO2009063755A1 (ja) 2007-11-14 2008-10-30 プラズマ処理装置および半導体基板のプラズマ処理方法

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Country Link
US (2) US20100279512A1 (ja)
JP (1) JPWO2009063755A1 (ja)
KR (1) KR101203038B1 (ja)
CN (1) CN101861641B (ja)
TW (1) TW200939902A (ja)
WO (1) WO2009063755A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130008607A1 (en) * 2011-07-06 2013-01-10 Tokyo Electron Limited Antenna, dielectric window, plasma processing apparatus and plasma processing method

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