WO2013005481A1 - サセプタ装置及びこれを備えた成膜装置 - Google Patents
サセプタ装置及びこれを備えた成膜装置 Download PDFInfo
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- WO2013005481A1 WO2013005481A1 PCT/JP2012/062548 JP2012062548W WO2013005481A1 WO 2013005481 A1 WO2013005481 A1 WO 2013005481A1 JP 2012062548 W JP2012062548 W JP 2012062548W WO 2013005481 A1 WO2013005481 A1 WO 2013005481A1
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- WIPO (PCT)
- Prior art keywords
- substrate
- lift pin
- moving
- susceptor
- lift
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Definitions
- the present invention relates to a susceptor apparatus and a film forming apparatus including the same.
- a substrate carried into a load lock chamber is carried into a film forming chamber by a robot, and the substrate is placed on a susceptor device.
- a device is known in which the tip of the pin is brought into contact with the substrate and the pin is moved up and down in this state to move the substrate up and down (see, for example, Patent Document 1).
- JP 2006-41028 A (paragraph 0020 etc.)
- an object of the present invention is to solve the above-mentioned problems of the prior art, and a susceptor device capable of suppressing impact generated on a substrate when the substrate is moved without lowering productivity and a component provided with the susceptor device.
- a membrane device is to be provided.
- the susceptor device according to the present invention is provided on the placement portion on which the substrate is placed and the placement portion, and protrudes upward from the placement portion when the substrate is loaded or unloaded.
- the control unit controls the lift pin moving means so as to reduce a moving speed immediately before the substrate and the substrate transfer device come into contact with each other when the substrate is moved while the substrate is supported by the lift pins. Is preferred. By comprising in this way, it can suppress that the installation position of a board
- the lift pin moving means and the placing portion moving means are electric cylinders. This is because movement control can be easily performed with an electric cylinder.
- the film forming apparatus of the present invention includes any one of the susceptor apparatuses described above.
- the film forming apparatus I on which the susceptor device 30 is mounted is a single wafer type film forming apparatus.
- the film forming apparatus I includes a first load lock chamber 12 in which a first substrate cassette 11 in which a substrate S for film formation is stored is placed, and a second load lock chamber 18 in which a second substrate cassette 17 is placed.
- processing chambers 13 to 16 in which processes including a film forming process are performed.
- Each of the processing chambers 13 to 16, the first load lock chamber 12 and the second load lock chamber 18 includes a vacuum exhaust unit (not shown), and can maintain the degree of vacuum independently in each chamber.
- the processing chamber 14 is a film forming chamber for performing a process of forming a film by epitaxial growth on the substrate S.
- the film forming apparatus I includes a robot (substrate transport apparatus) 21 for transporting the substrate S to each chamber.
- the robot 21 has a blade 22 on which the substrate S is placed.
- the width of the blade 22 is provided to be smaller than the width of the substrate S.
- the processing chamber 14 is provided with a susceptor device 30 according to the present invention.
- a substrate S is placed on the susceptor device 30.
- the processing chamber 14 is provided with a film forming gas introducing means 14 a for introducing a film forming gas into the processing chamber 14.
- the film formation surface of the substrate S on the susceptor device 30 is moved to a predetermined film formation position by the susceptor device 30, and a film is formed by the epitaxial growth method at this film formation position.
- the susceptor device 30 has a placement portion 31 on the surface side where the substrate is placed.
- the placement unit 31 has a circular shape in a top view.
- the placement portion 31 is provided with a placement portion shaft 32 on the back side thereof.
- the placement portion 31 is supported by the placement portion shaft 32.
- the mounting portion 31 is provided with a through hole 33 that penetrates the mounting portion 31.
- the through hole 33 includes a first through part 34 opened on the front surface side of the mounting part 31 and a second through part 35 opened on the back surface side of the mounting part 31.
- the second penetrating portion 35 is provided such that its diameter is smaller than that of the first penetrating portion 34. That is, the through hole 33 is T-shaped in a cross-sectional view as shown in the drawing.
- the through holes 33 are provided in the placement portions 31 so as to be located inside the edge portions of the substrate when the substrate is placed.
- the lift pin 40 is installed in the through hole 33.
- Three lift pins 40 are provided for one susceptor device 30.
- Each lift pin 40 is provided at an interval wider than the width of the adjacent lift pin 40 and the blade 22 (see FIG. 3B).
- the lift pin 40 is provided integrally with the support portion 41 having a diameter slightly smaller than that of the first through portion 34 and the support portion 41, and has a diameter slightly smaller than that of the second through portion 35. It consists of a pin part 42. That is, the lift pin 40 is also T-shaped in a cross-sectional view as shown in the drawing.
- the support unit 41 is configured such that the substrate is placed thereon when the support unit 41 is transported into the film forming chamber, and the surface thereof is configured to be horizontal with respect to the floor surface.
- the support portion 41 has the same depth as the first penetration portion 34, and the support portion 41 is supported by the bottom surface of the first penetration portion 34.
- the pin portion 42 extends in a direction perpendicular to the floor surface. Since the lift pin 40 is configured to have a slightly smaller diameter than the through hole 33 as described above, the lift pin 40 is pressed vertically upward with respect to the floor surface from below to form the through hole 33. Can be moved.
- the susceptor device 30 is further provided with a wafer lift member 50.
- the wafer lift member 50 includes an inclined lift pin support portion 51 and a cylindrical tubular shaft portion 52 provided integrally with the lift pin support portion 51.
- the lift pin support portion 51 is an arm-shaped support member that extends upward from the upper end portion of the cylindrical shaft portion 52, and is positioned so as to face the end portion of the pin portion 42 of each lift pin 40. Yes. That is, in this embodiment, the three lift pin support parts 51 are provided in the upper end part of the cylindrical shaft part 52, and each lift pin support part 51 supports each lift pin 40 from the downward side.
- the wafer lift member 50 and the mounting portion shaft 32 are provided with electric cylinders 61 and 62 in order to move up and down perpendicular to the floor surface. That is, the mounting portion shaft 32 is provided with a first electric cylinder (mounting portion moving means) 61, and the cylindrical shaft portion 52 of the wafer lift member 50 is provided with a second electric cylinder (lift pin moving means). 62 is provided. These electric cylinders 61 and 62 are individually moved up and down by receiving control signals individually from the control unit 63.
- the case where the substrate is moved includes a case where the robot places the substrate on the susceptor device 30, a case where the substrate is moved to the film forming position, and a case where the robot carries out the substrate.
- the substrate and the members and blades constituting the susceptor device 30 come into contact with each other, and it is considered that the substrate is displaced in the surface direction due to this impact.
- the movement of the substrate is controlled by the control unit 63 so that a series of processing can be efficiently performed on the substrate while suppressing the impact generated on the substrate and improving productivity.
- the movement of the susceptor device 30 is controlled by controlling the moving speed of the mounting portion shaft 32 and the cylindrical shaft portion 52 by the electric cylinders 61 and 62 in two stages by the control portion 63 as described below. It is configured such that a series of processes can be efficiently performed on the substrate by controlling and suppressing the impact generated on the substrate during the movement of the substrate while improving the productivity.
- FIG. 3 illustrates the operation of the susceptor device 30 before the substrate is carried in until the substrate is installed. As shown in FIG. 3A, since the distance between the upper end portion of the wafer lift member 50 and the placement portion 31 is shorter than the length of the lift pins 40 before the substrate is loaded, the lift pins 40 are supported by the wafer lift member 50. It protrudes above the mounting portion 31.
- the blade 22 of the robot 21 (see FIG. 1) is introduced into the film forming chamber.
- a substrate S is placed on the blade 22.
- the substrate S is placed on the blade 22 so as to be located at the transfer position P1.
- the width of the substrate S is wider than the width of the blade 22, and the substrate S is placed on the blade 22 so that the central portion of the substrate S is supported.
- the electric cylinders 61 and 62 are actuated by the control unit 63 (see FIG. 2), and the mounting portion shaft 32 and the cylindrical shaft portion 52 are operated. Simultaneously start moving upwards at the same speed.
- the control unit 63 controls the movement speed to be the first movement speed.
- the first movement speed is faster than the second movement speed.
- the first movement speed is 20 mm / s
- the second movement speed is 5 mm / s.
- the electric cylinders 61 and 62 are operated by the control unit 63, and the placement unit shaft 32 and the cylindrical shaft unit 52 are simultaneously moved upward at the same speed. Then, as shown in FIG. 3C, when the support portion 41 of the lift pin 40 and the substrate S rise to a close position, the placement portion shaft 32 and the cylindrical shaft portion 52 are controlled by the control portion 63 (see FIG. 2). Is switched to the second movement speed. That is, the moving speed of the mounting part 31 and the lift pin 40 falls.
- the mounting portion shaft 32 and the cylindrical shaft portion 52 move at the second movement speed, and the support portion 41 of the lift pin 40 contacts the back surface of the substrate S.
- the moving speed of the mounting portion 31 and the lift pin 40 decreases, so that the impact when the support portion 41 contacts the back surface of the substrate S is small, and the substrate S may shift in the surface direction. Absent.
- the control unit 63 moves the placement unit 31.
- the movement speed of the placement portion shaft 32 is switched to the second movement speed, and the placement portion shaft 32, that is, the placement portion 31 is raised as it is.
- the mounting portion 31 moves upward at the second movement speed and comes into contact with the back surface of the substrate S supported by the lift pins 40. Also in this case, since the moving speed of the placement portion shaft 32 is reduced as described above, the impact when the placement portion 31 comes into contact with the back surface of the substrate S is small and the substrate S is not displaced. .
- the control unit again switches the movement speed of the placement unit 31 to the first movement speed and raises it as shown in FIG. 4D.
- the mounting portion 31 is raised.
- the lift pins 40 and the lift pin support portion 51 are separated from each other, and the rising of the mounting portion 31 is stopped at a predetermined film forming position P2.
- the placement portion shaft 32 moves downward at the first movement speed. That is, only the placement part 31 descends at the first movement speed. And if the lift pin 40 and the lift pin support part 51 adjoin, the moving speed to the downward direction of the mounting part 31 will be switched to a 2nd moving speed.
- the movement speed of the lift pin 40 is as follows. Since the second moving speed is relatively slow, the impact generated on the substrate is small, and the displacement of the substrate S is suppressed.
- the placement portion 31 and the substrate S are separated from each other. In this state, only the placement portion 31 is moved downward. Move at 1 movement speed. Thereby, the distance between the placement unit 31 and the substrate S is increased. Then, as shown in FIG. 5D, the blade 22 is carried into the film forming chamber. In this case, when the substrate S is placed on the blade 22, the substrate S is inserted into the gap between the placement portion 31 and the substrate S so as to be positioned at the transfer position. Thereafter, the placement portion shaft 32 and the cylindrical shaft portion 52 are further moved at the first movement speed to positions where the distance between the blade 22 and the substrate S is close to each other.
- a process until the substrate S is unloaded from the film formation chamber will be described with reference to FIG.
- the placement portion shaft 32 and the cylindrical shaft portion 52 are moved downward at a second movement speed from a position where the distance between the blade 22 and the substrate S is close to each other, as shown in FIG. A substrate S is placed. Also in this case, when the substrate S is placed on the blade 22, the impact at the time of placement is transmitted to the substrate S. Even in this case, the moving speed of the substrate S is the second moving speed. Since it is relatively slow, the impact generated on the substrate is small, and displacement of the substrate S is suppressed.
- the placement portion shaft 32 and the cylindrical shaft portion 52 are further moved downward at the first movement speed, and the substrate is moved. S is supported only by the blade.
- the substrate S can be transported to the next processing chamber by unloading the blade 22 from the film forming chamber while the substrate S on the blade 22 is placed.
- the susceptor device 30 when an impact occurs when the substrate S is brought into contact with the substrate S, the susceptor device 30 is moved at the second movement speed, and at other locations, the first movement speed is used. By moving the substrate S, the displacement of the substrate S is prevented efficiently and the impact is suppressed.
- the case where an impact occurs when the substrate S is brought into contact with the substrate S is different from the case where the substrate S and the support portion 41 shown in FIG. 3D are in contact with each other as shown in FIG.
- abut when the board
- FIG.5 (b) when the board
- FIG.5 (b) when the board
- the movement speed is reduced immediately before the substrate S and the lift pins 40 or the placement portion 31 come into contact with each other, so that the impact can be suppressed efficiently and the displacement of the substrate S can be prevented.
- “immediately before contact” means that the distance between the substrate S and the lift pins 40 or the placement portion 31 is 10 mm or less, preferably 3 to 6 mm. If the distance between the two is longer than 10 mm, it is difficult to reduce the cycle time. And by setting it as a preferable range, an impact can be suppressed most efficiently.
- the cycle time for one substrate by the susceptor device according to the present embodiment was about 5% shorter than the cycle time of the susceptor device not according to the present embodiment (where each shaft is moved by an air cylinder instead of an electric cylinder). Further, the substrate was not displaced. Thus, it was found that by using the susceptor device in the present embodiment, it is possible to suppress the impact and suppress the displacement of the substrate and improve the productivity.
- the first movement speed is 20 mm / s and the second movement speed is 5 mm / s.
- the first movement speed is faster than 5 mm / s and not more than 50 mm / s. If the second moving speed is higher than 0 mm / s and not higher than 5 mm / s, the effect of the present invention can be preferably obtained. If the second movement speed is faster than 5 mm / s, the substrate may be easily displaced, and if the first movement speed is 5 mm / s or less, film formation cannot be performed efficiently. The second moving speed is preferably close to 5 mm / s because film formation can be performed efficiently. On the other hand, if the first moving speed is faster than 50 mm / s, there is a problem that the substrate is displaced or jumps. Therefore, each moving speed is preferably within the above-described range.
- each speed may be determined in more detail depending on, for example, the weight of the substrate, the surface shape, the pressure in the film forming chamber, and the like. The heavier the substrate, the rougher the surface roughness, and the closer the pressure is to atmospheric pressure, the more difficult the substrate is to slip when contacting, so the speed may be high.
- the movement speed is switched at the locations shown in FIGS. 3D, 4C, 5B, and 6A, but the present invention is not limited to this.
- the switching may be performed at least when the substrate and the lift pin are in contact with each other. If it is this range, while improving productivity, the impact which arises on a board
- the susceptor device of the present invention is used in the film forming chamber for epitaxial film formation, but the present invention is not limited to this. For example, you may use for another CVD apparatus etc.
- the susceptor device is configured to rotate during film formation, but is not limited thereto.
- the rotation may not be performed at the time of film formation.
- the film forming apparatus has a plurality of processing chambers, but is not limited thereto.
- a film forming apparatus including only a film forming chamber provided with a susceptor apparatus may be used.
- each chamber is provided with a vacuum exhaust means, but is not limited thereto.
- the vacuum evacuation unit may not be provided.
- the electric cylinder is used as the placement portion moving means and the lift pin moving means, the present invention is not limited to this. Any means capable of adjusting the moving speed may be used.
- First substrate cassette 12 First load lock chamber 13, 14, 15, 16 Processing chamber 14a Film forming gas introduction means 17 Second substrate cassette 18 Second load lock chamber 21 Robot 22 Blade 30 Susceptor device 31 Mounting section 32 Placement part shaft 33 Through hole 34 First penetration part 35 Second penetration part 40 Lift pin 41 Support part 42 Pin part 50 Wafer lift member 51 Lift pin support part 52 Cylindrical shaft parts 61, 62 Electric cylinder 63 Control part I Film forming apparatus S Substrate
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Abstract
Description
図1に示すように、サセプタ装置30が搭載される成膜装置Iは、枚葉式の成膜装置である。成膜装置Iは、成膜用の基板Sが収納された第1基板カセット11が載置された第1ロードロックチャンバー12と、第2基板カセット17が載置された第2ロードロックチャンバー18と、成膜処理を含む各処理がそれぞれ行われる処理室13~16とを有する。各処理室13~16、第1ロードロックチャンバー12及び第2ロードロックチャンバー18は、それぞれ図示しない真空排気手段を備え、各室で独立して真空度を保持することができる。本実施形態では、処理室13~16のうち、処理室14が基板S上にエピタキシャル成長による膜を成膜する処理を行う成膜室である。
サセプタ装置30は、その表面側に基板が載置される載置部31を有する。載置部31は、上面視において円形状である。載置部31にはその裏面側に載置部シャフト32が設けられている。この載置部シャフト32によって載置部31は支持されている。
図3(a)に示すように、基板搬入前にはウエハリフト部材50の上端部と載置部31との距離は、リフトピン40の長さよりも短いので、リフトピン40はウエハリフト部材50に支持されて載置部31よりも上方に突出している。
ブレード22と基板Sとの距離が近接する位置から載置部シャフト32及び筒状シャフト部52とを下方へ第2移動スピードで移動させて、図6(a)に示すようにブレード22上に基板Sを載置する。この場合にもブレード22上に基板Sを載置すると、この載置の際の衝撃が基板Sに伝達されるが、この場合であっても基板Sの移動スピードは第2移動スピードであり、比較的遅いので基板に生じる衝撃は小さく、基板Sのずれが抑制される。
12 第1ロードロックチャンバー
13,14,15,16 処理室
14a 成膜ガス導入手段
17 第2基板カセット
18 第2ロードロックチャンバー
21 ロボット
22 ブレード
30 サセプタ装置
31 載置部
32 載置部シャフト
33 貫通孔
34 第1貫通部
35 第2貫通部
40 リフトピン
41 支持部
42 ピン部
50 ウエハリフト部材
51 リフトピン支持部
52 筒状シャフト部
61,62 電動シリンダ
63 制御部
I 成膜装置
S 基板
Claims (5)
- 基板が載置される載置部と、
前記載置部に設けられ、前記基板の搬入又は搬出の際には前記載置部よりも上側に突出して前記載置部上に載置された前記基板を支持するリフトピンと、
前記リフトピンを上下動させるリフトピン移動手段とを備え、
前記基板の搬入又は搬出の際には、前記基板を前記リフトピンで支持した状態で前記リフトピン移動手段によりリフトピンを上下動させ前記基板を上下動させるサセプタ装置であって、
前記リフトピンを移動させる場合には、前記基板と前記リフトピンとが当接する直前で移動スピードを低下させるように前記リフトピン移動手段を制御する制御部とを備えたことを特徴とするサセプタ装置。 - 前記載置部を上下動させる載置部移動手段をさらに備え、
前記制御部が、前記基板の成膜時には、前記載置部移動手段を制御して前記載置部を上下動させるにあたり、前記リフトピンに支持された基板と該載置部とが当接する直前で移動スピードを低下させるように前記載置部移動手段を制御することを特徴とする請求項1記載のサセプタ装置。 - 前記制御部は、前記基板を前記リフトピンで支持した状態で前記基板を移動させる場合に、前記基板と基板搬送装置とが当接する直前で移動スピードを低下させるように前記リフトピン移動手段を制御する制御部を備えたことを特徴とする請求項1又は2記載のサセプタ装置。
- 前記リフトピン移動手段及び前記載置部移動手段が電動シリンダであることを特徴とする請求項2又は3記載のサセプタ装置。
- 請求項1~4のいずれか一項に記載のサセプタ装置を備えたことを特徴とする成膜装置。
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JP2013520306A JP5551831B2 (ja) | 2011-07-05 | 2012-05-16 | サセプタ装置及びこれを備えた成膜装置 |
US14/003,369 US20140007808A1 (en) | 2011-07-05 | 2012-05-16 | Susceptor Device And Deposition Apparatus Having The Same |
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JP2011-149524 | 2011-07-05 | ||
JP2011149524 | 2011-07-05 |
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US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
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Also Published As
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JPWO2013005481A1 (ja) | 2015-02-23 |
US20140007808A1 (en) | 2014-01-09 |
JP5551831B2 (ja) | 2014-07-16 |
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