JP2014179656A - 3次元構造のメモリ素子を製造する装置 - Google Patents
3次元構造のメモリ素子を製造する装置 Download PDFInfo
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- JP2014179656A JP2014179656A JP2014117902A JP2014117902A JP2014179656A JP 2014179656 A JP2014179656 A JP 2014179656A JP 2014117902 A JP2014117902 A JP 2014117902A JP 2014117902 A JP2014117902 A JP 2014117902A JP 2014179656 A JP2014179656 A JP 2014179656A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 126
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 6
- AUEPDNOBDJYBBK-UHFFFAOYSA-N [Si].[C-]#[O+] Chemical compound [Si].[C-]#[O+] AUEPDNOBDJYBBK-UHFFFAOYSA-N 0.000 claims description 5
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000003825 pressing Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
【解決手段】本発明の3次元構造のメモリ素子製造装置は,基板に対する工程が行われるチャンバ;前記チャンバ内に設けられ前記基板が載置され,昇降によって前記基板が前記チャンバの内部に出入する解除位置及び前記基板に対する工程が行われる工程位置に切り替えられる基板支持台;前記基板支持台が前記解除位置に位置する時,前記基板の上部に配置され,前記基板支持台が前記工程位置に切り替えられる時,前記基板支持台の上部に載置された前記基板のエッジ部を加圧する加圧面を有するエッジリングを含む。
【選択図】図9
Description
Claims (6)
- 基板に対する工程が行われるチャンバ;
前記チャンバ内に設けられ前記基板が載置され,昇降によって前記基板が前記チャンバの内部に出入する解除位置及び前記基板に対する工程が行われる工程位置に切り替えられる基板支持台;及び
前記基板支持台が前記解除位置に位置する時,前記基板の上部に配置され,前記基板支持台が前記工程位置に切り替えられる時,前記基板支持台の上部に載置された前記基板のエッジ部を加圧する加圧面を有するエッジリングを含むことを特徴とする3次元構造のメモリ素子製造装置。 - 前記基板のエッジ部は,前記基板の境界から内側に約0.5mm乃至3mmの範囲の幅を有することを特徴とする請求項1記載の3次元構造のメモリ素子製造装置。
- 前記エッジリングは,セラミック材質であることを特徴とする請求項1又は2記載の3次元構造のメモリ素子製造装置。
- 前記基板支持台は,前記基板の外側に位置するリング形状のエッジ部を有し,
前記エッジリングは,
前記基板支持台のエッジ部の上部に位置する支持部;
前記支持部から前記基板のエッジ部に向かって延長され,前記加圧面を有する加圧部;
前記支持部から前記チャンバの側壁に向かって延長され,前記基板支持台が解除位置にある時,前記チャンバの側壁に設けられた固定突起の上面に置かれる水平支持部;及び
前記支持部から前記下部に向かって延長され,前記基板支持台が解除位置にある時,前記チャンバの側壁に設けられた固定突起の側面と接する垂直支持部を備えることを特徴とする請求項1又は2記載の3次元構造のメモリ素子製造装置。 - 前記基板上に前記絶縁層を積層する時,SiCO(Silicon Carbon Oxide)を積層するために前記基板にエチル系のガス及びメチル系のガスから成る群より選択された1つ以上のガスと共に,SiH4,Si2H6,Si3H8,Si4H10を含む群から選択された1つ以上のガスを供給し,前記基板上に前記犠牲層を積層する時,窒化膜を積層するために前記基板にSiH4,Si2H6,Si3H8,Si4H10,SiCl2H2を含む群から選択された1つ以上のガスとアンモニア系のガスを供給するシャワーヘッドを含むことを特徴とする請求項1又は2記載の3次元構造のメモリ素子製造装置。
- 前記基板上に前記絶縁層を積層する時,SiCO(Silicon Carbon Oxide)を積層するために前記基板にエチル系のガス及びメチル系のガスから成る群より選択された1つ以上のガスと共に,SiH4,Si2H6,Si3H8,Si4H10を含む群から選択された1つ以上のガスを供給し,前記基板上に前記犠牲層を積層する時,窒化膜を積層するために前記基板にSiH4,Si2H6,Si3H8,Si4H10,ジクロロシラン(SiCl2H2)を含む群から選択された1つ以上のガスとアンモニア系のガス,そしてB2H6,PH3を含む群から選択された1つ以上のガスを供給するシャワーヘッドを含むことを特徴とする請求項1又は2記載の3次元構造のメモリ素子製造装置。
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