JP5690406B2 - 3次元構造のメモリ素子を製造する方法 - Google Patents
3次元構造のメモリ素子を製造する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 104
- 239000007789 gas Substances 0.000 claims description 39
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 238000010030 laminating Methods 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- AUEPDNOBDJYBBK-UHFFFAOYSA-N [Si].[C-]#[O+] Chemical compound [Si].[C-]#[O+] AUEPDNOBDJYBBK-UHFFFAOYSA-N 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
Claims (9)
- 3次元構造のメモリ素子を製造する方法において,
基板上に1つ以上の絶縁層及び1つ以上の犠牲層を交互に積層するステップ;
前記絶縁層及び前記犠牲層を貫通する貫通孔を形成するステップ;
前記貫通孔を埋めるパターンを形成するステップ;
前記絶縁層及び前記犠牲層を貫通する開口を形成するステップ;及び
前記開口を介してH3PO4,HF,BOEを含む群から選択された1つ以上のエッチャントを供給して前記犠牲層を除去するステップを含み,
前記絶縁層を積層するステップは,前記基板にエチル系のガス及びメチル系のガスから成る群より選択された1つ以上のガスと共に,SiH4,Si2H6,Si3H8,Si4H10を含む群から選択された1つ以上のガスを供給してSiCO(Silicon Carbon Oxide)膜を蒸着するステップを含み,
前記犠牲層を積層するステップは,前記基板にSiH4,Si2H6,Si3H8,Si4H10,SiCl2H2を含む群から選択された1つ以上のガスとアンモニア系のガスを供給して窒化膜を蒸着するステップを含むことを特徴とする3次元構造のメモリ素子を製造する方法。 - 前記絶縁層及び前記犠牲層は,前記エッチャントに対してエッチング選択比(etch selectivity)を有し,
前記犠牲層のエッチング率は,前記絶縁層のエッチング率に比べて5倍乃至300倍以上であることを特徴とする請求項1記載の3次元構造のメモリ素子を製造する方法。 - 前記アンモニア系のガスは,NH3であることを特徴とする請求項1又は2記載の3次元構造のメモリ素子を製造する方法。
- 前記絶縁層及び犠牲層の積層中,前記基板の温度を,300乃至790℃に維持すると共に,前記基板の工程圧力を10mTorr乃至250Torrに維持することを特徴とする請求項1又は2記載の3次元構造のメモリ素子を製造する方法。
- 前記SiCO膜と前記窒化膜は,互いに異なる厚さを有することを特徴とする請求項1又は2記載の3次元構造のメモリ素子を製造する方法。
- 前記絶縁層及び犠牲層を交互に積層するステップは,エッジリングを用いて前記基板のエッジ部を加圧するステップをさらに含むことを特徴とする請求項1記載の3次元構造のメモリ素子を製造する方法。
- 前記基板のエッジ部は,前記基板の境界から内側に約0.5mm乃至3mmの範囲の幅を有することを特徴とする請求項6記載の3次元構造のメモリ素子を製造する方法。
- 前記エッジリングは,セラミック材質であることを特徴とする請求項6又は7記載の3次元構造のメモリ素子を製造する方法。
- 3次元構造のメモリ素子を製造する方法において,
基板上に1つ以上の絶縁層及び1つ以上の犠牲層を交互に積層するステップ;
前記絶縁層及び前記犠牲層を貫通する貫通孔を形成するステップ;
前記貫通孔を埋めるパターンを形成するステップ;
前記絶縁層及び前記犠牲層を貫通する開口を形成するステップ;及び
前記開口を介してH3PO4,HF,BOEを含む群から選択された1つ以上のエッチャントを供給して前記犠牲層を除去するステップを含み,
前記絶縁層を積層するステップは,前記基板にエチル系のガス及びメチル系のガスから成る群より選択された1つ以上のガスと共に,SiH4,Si2H6,Si3H8,Si4H10を含む群から選択された1つ以上のガスを供給してSiCO(Silicon Carbon Oxide)膜を蒸着するステップを含み,
前記犠牲層を積層するステップは,前記基板にSiH4,Si2H6,Si3H8,Si4H10,ジクロロシラン(SiCl2H2)を含む群から選択された1つ以上のガスとアンモニア系のガス,そしてB2H6,PH3を含む群から選択された1つ以上のガスを供給してホウ素(boron)又は燐(phosphorus)が注入された窒化膜を蒸着するステップを含むことを特徴とする3次元構造のメモリ素子を製造する方法。
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