WO2012050322A2 - 3차원 구조의 메모리 소자를 제조하는 방법 및 장치 - Google Patents
3차원 구조의 메모리 소자를 제조하는 방법 및 장치 Download PDFInfo
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- WO2012050322A2 WO2012050322A2 PCT/KR2011/007403 KR2011007403W WO2012050322A2 WO 2012050322 A2 WO2012050322 A2 WO 2012050322A2 KR 2011007403 W KR2011007403 W KR 2011007403W WO 2012050322 A2 WO2012050322 A2 WO 2012050322A2
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 137
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical class N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 15
- 150000004767 nitrides Chemical class 0.000 claims abstract description 13
- 230000000149 penetrating effect Effects 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 44
- 238000003825 pressing Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- AUEPDNOBDJYBBK-UHFFFAOYSA-N [Si].[C-]#[O+] Chemical compound [Si].[C-]#[O+] AUEPDNOBDJYBBK-UHFFFAOYSA-N 0.000 claims description 5
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract 4
- 238000010030 laminating Methods 0.000 abstract 3
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 2
- 229910005096 Si3H8 Inorganic materials 0.000 abstract 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 230000035515 penetration Effects 0.000 abstract 2
- -1 Si4H10 Inorganic materials 0.000 abstract 1
- 229910003915 SiCl2H2 Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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Abstract
Description
Claims (18)
- 3차원 구조의 메모리 소자를 제조하는 방법에 있어서,기판 상에 하나 이상의 절연층 및 하나 이상의 희생층을 교대로 적층하는 단계;상기 절연층 및 상기 희생층을 관통하는 관통홀을 형성하는 단계;상기 관통홀을 채우는 패턴을 형성하는 단계;상기 절연층 및 상기 희생층을 관통하는 개구를 형성하는 단계; 및상기 개구를 통해 에천트를 공급하여 상기 희생층을 제거하는 단계를 포함하되,상기 절연층을 적층하는 단계는 상기 기판에 SiH4, Si2H6, Si3H8, Si4H10을 포함하는 군으로부터 선택된 하나 이상의 가스를 공급하여 실리콘 산화막을 증착하는 단계를 포함하며,상기 희생층을 적층하는 단계는 상기 기판에 SiH4, Si2H6, Si3H8, Si4H10, SiCl2H2을 포함하는 군으로부터 선택된 하나 이상의 가스와 암모니아 계열의 가스를 공급하여 질화막을 증착하는 단계를 포함하는 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제1항에 있어서,상기 절연층 및 상기 희생층은 상기 에천트에 대해 식각 선택비(etch selectivity)를 가지며,상기 희생층의 식각률은 상기 절연층의 식각률에 비해 5배 내지 300배 이상인 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제1항 또는 제2항에 있어서,상기 에천트는 H3PO4, HF, BOE를 포함하는 군으로부터 선택된 하나 이상인 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제1항 또는 제2항에 있어서,상기 절연층을 적층하는 단계는 에틸계열의 가스를 공급하는 단계를 더 포함하며,상기 실리콘 산화막은 SiCO(Silicon Carbon Oxide)인 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제1항 또는 제2항에 있어서,상기 절연층을 적층하는 단계는 메틸계열의 가스를 공급하는 단계를 더 포함하며,상기 실리콘 산화막은 SiCO(Silicon Carbon Oxide)인 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제1항 또는 제2항에 있어서,상기 암모니아 계열의 가스는 NH3인 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제1항 또는 제2항에 있어서,상기 기판의 온도는 300 내지 790도를 유지하며,상기 기판의 공정압력은 10 mTorr 내지 250 Torr를 유지하는 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제1항 또는 제2항에 있어서,상기 실리콘 산화막과 상기 질화막은 서로 다른 두께를 가지는 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제1항에 있어서,상기 절연층 및 희생층을 교대로 적층하는 단계는 에지링을 이용하여 상기 기판의 에지부를 가압하는 단계를 더 포함하는 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제9항에 있어서,상기 기판의 에지부는 상기 기판의 에지로부터 0.5 ㎜ 내지 3 ㎜ 내측에 해당하는 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 제9항 또는 제10항에 있어서,상기 에지링은 세라믹 재질인 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 3차원 구조의 메모리 소자를 제조하는 방법에 있어서,기판 상에 하나 이상의 절연층 및 하나 이상의 희생층을 교대로 적층하는 단계;상기 절연층 및 상기 희생층을 관통하는 관통홀을 형성하는 단계;상기 관통홀을 채우는 패턴을 형성하는 단계;상기 절연층 및 상기 희생층을 관통하는 개구를 형성하는 단계; 및상기 개구를 통해 에천트를 공급하여 상기 희생층을 제거하는 단계를 포함하되,상기 절연층을 적층하는 단계는 상기 기판에 SiH4, Si2H6, Si3H8, Si4H10을 포함하는 군으로부터 선택된 하나 이상의 가스를 공급하여 제1 실리콘 산화막을 증착하는 단계를 포함하며,상기 희생층을 적층하는 단계는 상기 기판에 SiH4, Si2H6, Si3H8, Si4H10, 디클로로실란(SiCl2H2)을 포함하는 군으로부터 선택된 하나 이상의 가스와 암모니아 계열의 가스, 그리고 B2H6, PH3를 포함하는 군으로부터 선택된 하나 이상의 가스를 공급하여 보론(boron) 또는 인(phosphorus)이 주입된 질화막을 증착하는 단계를 포함하는 것을 특징으로 하는 3차원 구조의 메모리 소자를 제조하는 방법.
- 기판에 대한 공정이 이루어지는 챔버;상기 챔버 내에 설치되어 상기 기판이 놓여지며, 승강에 의해 상기 기판이 상기 챔버의 내부로 출입하는 해제위치 및 상기 기판에 대한 공정이 이루어지는 공정위치로 전환되는 기판지지대; 및상기 기판지지대가 상기 해제위치에 위치할 때 상기 기판의 상부에 배치되며, 상기 기판지지대가 상기 공정위치로 전환될 때 상기 기판지지대의 상부에 놓여진 상기 기판의 에지부를 가압하는 가압면을 가지는 에지링을 포함하는 것을 특징으로 하는 3차원 구조의 메모리 소자 제조장치.
- 제13항에 있어서,상기 기판의 에지부는 상기 기판의 에지로부터 0.5 ㎜ 내지 3 ㎜ 내측에 해당하는 것을 특징으로 하는 3차원 구조의 메모리 소자 제조장치.
- 제13항 또는 제14항에 있어서,상기 에지링은 세라믹 재질인 것을 특징으로 하는 3차원 구조의 메모리 소자 제조장치.
- 제13항 또는 제14항에 있어서,상기 기판지지대는 상기 기판의 외측에 위치하는 링 형상의 에지부를 가지며,상기 에지링은,상기 기판지지대의 에지부 상부에 위치하는 지지부;상기 지지부로부터 상기 기판의 에지부를 향해 연장되며, 상기 가압면을 가지는 가압부;상기 지지부로부터 상기 챔버의 측벽을 향해 연장되며, 상기 기판지지대가 해제위치에 있을 때 상기 챔버의 측벽에 설치된 고정돌기의 상면에 놓여지는 수평지지부; 및상기 지지부로부터 상기 하부를 향해 연장되며, 상기 기판지지대가 해제위치에 있을 때 상기 챔버의 측벽에 설치된 고정돌기의 측면과 접하는 수직지지부를 구비하는 것을 특징으로 하는 3차원 구조의 메모리 소자 제조장치.
- 기판 상에 하나 이상의 절연층 및 하나 이상의 희생층을 교대로 적층하여 3차원 구조의 메모리 소자를 제조하는 장치에 있어서,기판에 대한 공정이 이루어지는 챔버;상기 챔버 내에 설치되어 상기 기판이 놓여지는 기판지지대; 및상기 기판 상에 상기 절연층을 적층할 때 상기 기판에 SiH4, Si2H6, Si3H8, Si4H10을 포함하는 군으로부터 선택된 하나 이상의 가스를 공급하며, 상기 기판 상에 상기 희생층을 적층할 때 상기 기판에 SiH4, Si2H6, Si3H8, Si4H10, SiCl2H2을 포함하는 군으로부터 선택된 하나 이상의 가스와 암모니아 계열의 가스를 공급하는 샤워헤드를 포함하는 것을 특징으로 하는 3차원 구조의 메모리 소자 제조장치.
- 기판 상에 하나 이상의 절연층 및 하나 이상의 희생층을 교대로 적층하여 3차원 구조의 메모리 소자를 제조하는 장치에 있어서,기판에 대한 공정이 이루어지는 챔버;상기 챔버 내에 설치되어 상기 기판이 놓여지는 기판지지대; 및상기 기판 상에 상기 절연층을 적층할 때 상기 기판에 SiH4, Si2H6, Si3H8, Si4H10을 포함하는 군으로부터 선택된 하나 이상의 가스를 공급하며, 상기 기판 상에 상기 희생층을 적층할 때 상기 기판에 SiH4, Si2H6, Si3H8, Si4H10, 디클로로실란(SiCl2H2)을 포함하는 군으로부터 선택된 하나 이상의 가스와 암모니아 계열의 가스, 그리고 B2H6, PH3를 포함하는 군으로부터 선택된 하나 이상의 가스를 공급하는 샤워헤드를 포함하는 것을 특징으로 하는 3차원 구조의 메모리 소자 제조장치.
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KR20040103648A (ko) * | 2003-05-30 | 2004-12-09 | 삼성전자주식회사 | 반도체 기판지지 척 및 박막 증착 장치 |
KR20080105525A (ko) * | 2007-05-31 | 2008-12-04 | 주성엔지니어링(주) | 실리콘을 포함한 박막 형성방법 |
KR20100059655A (ko) * | 2008-11-25 | 2010-06-04 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 동작 방법 |
KR20100074543A (ko) * | 2008-12-24 | 2010-07-02 | 주식회사 하이닉스반도체 | 수직채널형 비휘발성 메모리 소자 및 그 제조 방법 |
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KR20120038578A (ko) | 2012-04-24 |
TW201432885A (zh) | 2014-08-16 |
CN104674192B (zh) | 2018-06-15 |
US20130178066A1 (en) | 2013-07-11 |
TW201232762A (en) | 2012-08-01 |
JP2014500609A (ja) | 2014-01-09 |
WO2012050322A3 (ko) | 2012-06-28 |
JP5836431B2 (ja) | 2015-12-24 |
CN103155138A (zh) | 2013-06-12 |
TWI524508B (zh) | 2016-03-01 |
CN104674192A (zh) | 2015-06-03 |
JP2014179656A (ja) | 2014-09-25 |
KR101175148B1 (ko) | 2012-08-20 |
JP5690406B2 (ja) | 2015-03-25 |
US9396954B2 (en) | 2016-07-19 |
TWI570890B (zh) | 2017-02-11 |
CN103155138B (zh) | 2015-08-26 |
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