JP5371785B2 - Rfシャッター - Google Patents
Rfシャッター Download PDFInfo
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- JP5371785B2 JP5371785B2 JP2009551866A JP2009551866A JP5371785B2 JP 5371785 B2 JP5371785 B2 JP 5371785B2 JP 2009551866 A JP2009551866 A JP 2009551866A JP 2009551866 A JP2009551866 A JP 2009551866A JP 5371785 B2 JP5371785 B2 JP 5371785B2
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 abstract description 59
- 230000008021 deposition Effects 0.000 abstract description 18
- 239000002245 particle Substances 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 23
- 238000000151 deposition Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
Description
本発明の実施形態は、主に基板ペデスタルの下に生じる堆積の量を低減するためのRFシャッターに関する。
プラズマ処理において、基板はその基板上でのプロセスを実行するためにプラズマに曝されるかもしれない。このようなプロセスはデポジション、エッチング、イオンインプランテーション、堆積後の処理を含むかもしれない。そのようなプラズマ堆積プロセスの一つである、プラズマエンハンスド化学蒸着(PECVD)において、RFバイアスは、プラズマを発生するためにシャワーヘッドに印加され、及び/又は、更にこのシャワーヘッドと基板支持体との間のところで、離れて発生されるプラズマを励起するために印加されるかもしれない。プラズマ堆積プロセスにおいて、堆積はプラズマに曝される全ての部位においてチャンバ内で生じる。チャンバの表面上の所定量の堆積があっても、チャンバ上の表面上に堆積した物質が剥離し、又は、剥がれ落ち、潜在的に基板を汚染しなければ、許容される。チャンバの表面上の堆積のレベルが、一旦、許容度に達すると、パーティクルの剥離の可能性を低減するために、チャンバの表面は洗浄もしくは交換されるかもしれない。
Claims (14)
- 複数の壁により区分けされた内部空間を有し、少なくとも1つの壁は、第1の距離だけ口が広がった開口を有するチャンバ本体と、
第1の壁から延び出て、前記第1の壁の長さと等しい長さを有する第1のRFシャッターと、
第2の壁から延び出て、前記第2の壁の長さより短い長さを有する第2のRFシャッターと、
前記第2の壁の長さより短い長さを有する前記第2の壁から延び出た第3のRFシャッターとを含むプロセス装置。 - 前記第1の壁は、貫通する開口を有する請求項1記載の装置。
- 第2の壁は、前記第1の壁の反対側に設けられている請求項1記載の装置。
- 第3の壁から延び出て、前記第3の壁の長さとほぼ等しい長さを有する第4のRFシャッターと、
第4の壁の長さとほぼ等しい長さを有する、前記第4の壁から延び出た第5のRFシャッターとを含む請求項3記載の装置。 - 前記第2のRFシャッターと前記第3のRFシャッターは実質的に同等のものである請求項4記載の装置。
- 前記第3の壁及び第4の壁は、相互に平行であり、前記第1の壁及び前記第2の壁に隣接している請求項5記載の装置。
- 前記第2の壁は前記第1の壁に隣接して設けられている請求項1記載の装置。
- 第3の壁から延び出て、前記第3の壁の長さより短い長さを有する第4のRFシャッターと、
前記第3の壁の長さより短い長さを有する、前記第3の壁から延び出た第5のRFシャッターとを含む請求項7記載の装置。 - 第4の壁から延び出て、前記第4の壁の長さより短い長さを有する第6のRFシャッターと、
前記第4の壁の長さより短い長さを有する、前記第4の壁から延び出た第7のRFシャッターとを含む請求項8記載の装置。 - 前記第2のRFシャッター、前記第3のRFシャッター、及び第4のRFシャッター、前記第5のRFシャッター、前記第6のRFシャッター、及び前記第7のRFシャッターは実質的に同等のものである請求項9記載の装置。
- 前記第1、第2及び第3のRFシャッターに結合される第1の位置と、前記第1、第2、及び第3のRFシャッターとは結合されていない第2の位置との間で移動可能なシャドウフレームを含む更に含む請求項1記載の装置。
- 複数の壁により区分けされる内部空間を有し、前記複数の壁のうちの第1の壁は貫通する開口を有するチャンバ本体と、
第1の壁から延び出て、前記第1の壁の長さとほぼ同じ長さを有する第1のRFシャッターと、
第2の壁から延び出て、全体で前記第2の壁の長さより短い長さを有する複数の第2のRFシャッターと、
第3の壁から延び出て、全体で前記第3の壁の長さより短い長さを有する複数の第3のRFシャッターと、
第4の壁から延び出て、前記第4の壁の長さとほぼ等しい長さを有する第4のRFシャッターとを含むプラズマエンハンスド化学蒸着装置。 - 前記第1の壁は前記第4の壁にほぼ平行である請求項12記載の装置。
- 前記複数の第2のRFシャッター及び前記複数の第3のRFシャッターは、ほぼ一直線上に並べられている請求項13記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US89244707P | 2007-03-01 | 2007-03-01 | |
US60/892,447 | 2007-03-01 | ||
PCT/US2008/055438 WO2008106632A2 (en) | 2007-03-01 | 2008-02-29 | Rf shutter |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010520370A JP2010520370A (ja) | 2010-06-10 |
JP5371785B2 true JP5371785B2 (ja) | 2013-12-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009551866A Expired - Fee Related JP5371785B2 (ja) | 2007-03-01 | 2008-02-29 | Rfシャッター |
Country Status (6)
Country | Link |
---|---|
US (1) | US8281739B2 (ja) |
JP (1) | JP5371785B2 (ja) |
KR (1) | KR101374583B1 (ja) |
CN (1) | CN101647090B (ja) |
TW (1) | TWI405247B (ja) |
WO (1) | WO2008106632A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101768761B1 (ko) | 2014-02-27 | 2017-08-17 | 도쿄엘렉트론가부시키가이샤 | 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법 |
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KR101768761B1 (ko) | 2014-02-27 | 2017-08-17 | 도쿄엘렉트론가부시키가이샤 | 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법 |
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CN101647090A (zh) | 2010-02-10 |
WO2008106632A3 (en) | 2008-12-11 |
KR20100014609A (ko) | 2010-02-10 |
KR101374583B1 (ko) | 2014-03-17 |
US8281739B2 (en) | 2012-10-09 |
CN101647090B (zh) | 2012-08-29 |
WO2008106632A2 (en) | 2008-09-04 |
US20080286463A1 (en) | 2008-11-20 |
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TWI405247B (zh) | 2013-08-11 |
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