CN103201408A - 具有多个等离子体室的游离基反应器 - Google Patents
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Abstract
在游离基反应器中提供两个或者更多等离子体室以在不同条件下生成气体的游离基用于在原子层沉积(ALD)工艺中使用。游离基反应器具有如下本体,该本体具有多个通道和对应工艺室。每个等离子体室由外电极包围并且具有经过室延伸的内电极。在跨外电极和内电极施加电压而气体存在于等离子体室中时,在等离子体室中生成气体的游离基。然后向混合室中注入在等离子体室中生成的游离基用于与来自另一等离子体室的另一气体的游离基混合、然后向衬底上注入。通过提供两个或者更多等离子体室,可以在相同游离基反应器内生成气体的不同游离基,这可以避免需要分离的游离基反应器。
Description
技术领域
本发明涉及一种用于使用原子层沉积(ALD)在衬底上沉积一个或者多个材料层的游离基反应器。
背景技术
原子层沉积(ALD)是用于在衬底上沉积一个或者多个材料层的薄膜沉积技术。ALD使用两种类型化学物,一种是源前体而另一种是反应物前体。一般而言,ALD包括四个阶段:(i)注入源前体,(ii)去除源前体的物理吸收层,(iii)注入反应物前体以及(iv)去除反应物前体的物理吸收层。ALD可以是在可以获得所需厚度的层之前可能需要延长的时间量或者许多重复的缓慢过程。因此,为了加速过程,如在公开号为2009/0165715的美国专利申请中描述的具有单元模块(所谓的线性注入器)的汽相沉积反应器或者其它相似设备可以用来加速ALD工艺。单元模块包括用于源材料的注入单元和排放单元(源模块)以及用于反应物的注入单元和排放单元(反应物模块)。
常规ALD汽相沉积室具有用于在衬底上沉积ALD层的一组或者多组反应器。随着衬底在反应器以下穿过,所以衬底暴露于源前体、吹扫气体和反应物前体。在衬底上沉积的源前体分子与反应物前体分子反应或者源前体分子替换为反应物前体分子以在衬底上沉积材料层。在使衬底暴露于源前体或者反应物前体之后,衬底可以暴露于吹扫气体以从衬底去除过量源前体分子或者反应物前体分子。
发明内容
实施例涉及使用具有多个等离子体室的游离基(radical)反应器在衬底上沉积一个或者多个材料层,每个等离子体室在不同条件下用于生成不同气体的游离基。可以在不同条件下在等离子体室中形成气体的游离基。因此,游离基反应器形成有多个等离子体室,这些等离子体室放置于适当条件中以用于生成向等离子体室中注入的气体的游离基。
在一个实施例中,游离基反应器具有与衬底装配于其上的基座相邻放置的本体。本体可以形成有:第一等离子体室,被配置用于接收第一气体;第二等离子体室,被配置用于接收第二气体;以及混合室,连接到第一等离子体室和第二等离子体室以从第一等离子体室和第二等离子体室接收第一气体的游离基和第二气体的游离基。等离子体室从衬底远离定位以防止向等离子体室施加的电压影响衬底或者在衬底上形成的设备。
在一个实施例中,第一内电极在第一等离子体室内延伸。第一内电极被配置用于通过跨第一内电极和第一外电极施加第一电压差在第一等离子体室内生成第一气体的游离基。第二内电极在第二等离子体室内延伸。第二内电极被配置用于通过跨第二内电极和第二外电极施加第二电压差在第二等离子体室内生成第二气体的游离基。第一电压差大于或者小于第二电压差。
在一个实施例中,本体还形成有混合室,第一气体的游离基和第二气体的游离基在与衬底发生接触之前在该混合室中混合。
在一个实施例中,本体还形成有将第一等离子体室连接到第一气体源的第一通道和将第二等离子体室连接到第二气体源的第二通道。
在一个实施例中,本体还形成有将第一等离子体室与混合室连接的至少一个第一穿孔和将第二等离子体室与混合室连接的至少一个第二穿孔。
在一个实施例中,沿着第一平面对准第一通道、第一电极、第一等离子体室和第一穿孔。也沿着相对于第一平面成角度定向的第二平面对准第二通道、第二电极、第二等离子体室和第二穿孔。
在一个实施例中,第一穿孔和第二穿孔朝着混合室内的相同内部区域定向以有助于混合游离基。
在一个实施例中,游离基反应器放置于基座上方以随着基座在游离基反应器下方移动而注入游离基。
在一个实施例中,本体在游离基反应器的相对侧形成有两个出口。
在一个实施例中,本体形成有:第一混合室,在该第一混合室中,从第一等离子体室和第二等离子体室注入第一气体的游离基和第二气体的游离基以用于混合;第二混合室,与衬底相向,用于允许经混合的游离基与衬底发生接触;以及连通通道,连接第一混合室和第二混合室。
在一个实施例中,游离基反应器用于对衬底执行原子层沉积(ALD)。
实施例也涉及一种用于使用原子层沉积(ALD)在衬底上沉积一个或者多个材料层的沉积装置。沉积装置包括游离基反应器,游离基反应器具有形成于其中以用于在不同条件下生成气体的游离基的多个游离基反应器。
实施例也涉及一种使用原子层沉积(ALD)在衬底上沉积一层或者多层的方法。该方法包括向形成于游离基反应器中的第一等离子体室中注入第一气体。在第一条件下在第一等离子体室中生成第一气体的游离基。向形成于游离基反应器中的第二等离子体室中注入第二气体。在与第一条件不同的第二条件下在第二等离子体室中生成第二气体的游离基。在形成于游离基反应器中的混合室中混合第一气体的游离基与第二气体的游离基。向衬底上注入混合的游离基。
在一个实施例中,第一条件涉及跨第一等离子体室的内电极和外电极施加第一电压电平,并且第二条件涉及跨第二等离子体室的内电极和外电极施加第二电压电平。
附图说明
图1是根据一个实施例的线性沉积设备的截面图。
图2是根据一个实施例的线性沉积设备的透视图。
图3是根据一个实施例的旋转沉积设备的透视图。
图4是根据一个实施例的反应器的透视图。
图5A是根据一个实施例的游离基反应器的俯视图。
图5B是根据一个实施例的沿着图5A的线A-A′截取的游离基反应器的截面图。
图6是根据一个实施例的沿着图5A的线B-B′截取的游离基反应器的截面图。
图7至图9是根据各种实施例的游离基反应器的截面图。
图10是图示根据一个实施例的向衬底上注入混合的游离基的工艺的流程图。
具体实施方式
这里参照附图描述实施例。然而可以用许多不同形式实现这里公开的原理并且不应解释这些原理为限于这里阐述的实施例。在描述中可以省略众所周知的特征和技术的细节以免不必要地模糊实施例的特征。
在附图中,附图中的相似标号表示相似元件。为了清楚,可以夸大附图的形状、尺寸和区域等。
实施例涉及在游离基反应器中提供两个或者更多等离子体室以在不同条件下生成气体的游离基用于在原子层沉积(ALD)工艺中使用。游离基反应器具有如下本体,该本体具有多个通道和对应等离子体室。电极放置于每个等离子体室中和周围以在跨电极施加电压时生成等离子体。等离子体生成在等离子体室中存在的气体的游离基。然后向混合室中注入在等离子体室中生成的游离基用于与来自另一等离子体室的另一气体的游离基混合,并且然后向衬底上注入。通过在游离基反应器中提供两个或者更多等离子体室,可以避免需要多个游离基反应器。
这里描述的等离子体室是指向其中注入气体用于生成气体的游离基的腔。电极放置于等离子体室中和/或周围以在跨电极施加电压时在等离子体室中生成等离子体。等离子体室可以从衬底远离定位以防止等离子体或者电火花影响衬底或者衬底上的设备。
这里描述的混合室是指在其中混合两种或者更多种气体的游离基的腔。
图1是根据一个实施例的线性沉积设备100的截面图。图2是图1的线性沉积设备100(无室壁110以便于说明)的透视图。线性沉积设备100可以包括支撑柱118、处理室110和一个或者多个反应器136以及其它部件。反应器136可以包括注入器和游离基反应器中的一个或者多个。注入器模块中的每个注入器模块向衬底120上注入源前体、反应物前体、吹扫气体或者这些材料的组合。游离基反应器向衬底120上注入一种或者多种气体的游离基。游离基可以充当源前体、反应物前体或者用于处理衬底120的表面的材料。
可以将由壁110包围的处理室维持在真空状态中以防止污染物影响沉积工艺。处理室包含接收衬底120的基座128。基座128放置于用于滑动移动的支撑板124上。支撑板124可以包括用于控制衬底120的温度的温度控制器(例如加热器或者冷却器)。线性沉积设备100也可以包括有助于向基座128上加载衬底120或者从基座128卸装衬底120的升降销(lift pin)。
在一个实施例中,基座128固着至托架210,托架210沿在其上形成有螺杆的延伸棒138移动。托架210具有在它们的接收延伸棒138的孔中形成的对应螺杆。延伸棒138固着到马达114的主轴,因此延伸棒138随着马达114的主轴旋转而旋转。延伸棒138的旋转使托架210(并且因此使基座128)在支撑板124上产生线性移动。通过控制马达114的速度和旋转方向,可以控制基座128的线性移动的速度和方向。马达114和延伸棒138的使用仅为用于移动基座128的机制的例子。可以使用移动基座128的各种其它方式(例如在基座128的底部、顶部或者侧部处使用齿轮和小齿轮)。另外,基座128可以保持静止并且可以移动反应器136而不是移动基座128。
图3是根据一个实施例的旋转沉积设备300的透视图。根据另一实施例,旋转沉积设备300可以用来执行沉积工艺而不是使用图1的线性沉积设备100。旋转沉积设备300可以包括反应器320、334、364、368、基座318和包围这些部件的容器324以及其它部件。基座318适当地固着衬底314。反应器320、334、364、368放置于衬底314和基座318上方。基座318或者反应器320、334、364、368旋转以使衬底314受到不同工艺。
反应器320、334、364、368中的一个或者多个经由入口330连接到导管以接收源前体、反应器前体、吹扫气体和/或其它材料。导管提供的材料可以(i)由反应器320、334、364、368直接、(ii)在反应器320、334、364、368以内的室中混合之后或者(iii)在由反应器320、334、364、368内生成的等离子体转换成游离基之后向衬底314上注入。在向衬底314上注入材料之后,可以经过出口330排放多余材料。
可以在沉积设备(诸如线性沉积设备100、旋转沉积设备300或者其它类型的沉积设备)中使用这里描述的游离基反应器的实施例。图4是与注入器136A串接放置于线性沉积设备100中的游离基反应器136B的例子。装配有衬底120的基座128在两个方向(即图4中的右和左方向)上往复以使衬底120暴露于注入器136A和游离基反应器136B注入的气体和/或游离基。虽然在图4中仅图示一个注入器136A和一个游离基反应器136B,但是可以在线性沉积设备100中提供多得多的注入器和/或游离基反应器。也可以仅提供游离基反应器136B而不提供注入器136A。
注入器136A经过导管412接收气体并且随着基座128在注入器136A下方移动而向衬底120上注入气体。注入的气体可以是源气体、反应物气体、吹扫气体或者其组合。在向衬底120上注入之后,经由出口422排出注入器136A中的过量气体。出口422连接到导管(未示出)以将过量气体排出线性沉积设备100以外。
游离基反应器136B经由导管(未示出)接收气体并且具有两个等离子体室。通道形成于游离基反应器136B的本体中以向等离子体室输送接收的气体。两个内电极410、414跨游离基反应器137B纵向延伸并且经由接线402、404连接到电压源(未示出)或者接地(未示出)。如下文参照图6具体描述的那样,内电极410、414放置于等离子体室以内。游离基反应器136B中的外电极连接到接地或者电压源。在一个实施例中,游离基反应器136B的传导本体充当外电极。出口424形成于游离基反应器136B的本体中以排出在向衬底120上注入之后从游离基恢复成不活跃状态的过量游离基和/或气体。出口424连接到导管(未示出)以将过量游离基和/或气体排出线性沉积设备100以外。
图5A是根据一个实施例的游离基反应器136B的俯视图。内电极410、414分别沿着圆柱形等离子体516、518纵向延伸(在图6中更清楚地图示)。等离子体516、518经由孔508、512连接到通道502、506以接收向游离基反应器136B中注入的气体。可以形成缝或者其它穿孔而不是孔508、512以向等离子体室516、518输送气体。通道502、506连接到提供不同气体的不同气体源,从而等离子体室516、518由不同气体填充。
图5B是根据一个实施例的沿着图5A的线A-A′截取的游离基反应器136B的截面图。游离基反应器136B具有出口424形成于其中的本体524。出口424被成形为使得它的底部部分520跨游离基反应器136B纵向延伸而上部分521具有用于连接到导管(未示出)的更窄宽度。通过跨游离基反应器136B延伸底部部分520,出口424可以更有效排出过量游离基/气体。
图6是根据一个实施例的沿着图5A的线B-B′截取的游离基反应器136B的截面图。在游离基反应器136B的本体524中,两个等离子体室516、518形成于混合室530的右和左侧。两个等离子体室516、518中的每个等离子体室经由孔508、512连接到通道502、506以接收气体并且经由缝604、608连接到混合室530。内电极410、414沿着游离基反应器137B纵向延伸。在图6的实施例中,沿着平面C1-C2对准通道502、孔508、等离子体室516和缝604。相对于竖直平面C1-C4成角度α倾斜平面C1-C2。沿着平面C1-C3对准通道506、孔512、等离子体室518和缝608。在通道502、孔508、等离子体室516和缝604对面,相对于竖直平面C1-C4成角度β倾斜平面C1-C3。角度α和角度β可以有相同或者不同幅度。
在其它实施例中,未沿着相同平面对准通道、孔、等离子体室和缝中的一个或者多个,而是将其以不同布置放置。例如可以在通道的左或者右侧水平或者在通道上方竖直提供通道。也可以使用通道、孔、等离子体室和缝的各种其它布置。
在图6的实施例中,经由通道502和孔508向等离子体室516中注入第一气体。通过跨内电极410和外电极520施加电压,在等离子体室516中生成等离子体,从而在等离子体室516内产生第一气体的游离基。然后经由缝604向混合室530中注入第一气体的生成的游离基。此外,经由通道506和孔512向等离子体室518中注入第二气体。通过跨内电极414和外电极522施加电压,在等离子体室518内生成等离子体,从而在等离子体室518内产生第二气体的游离基。然后经由缝608向混合室530中注入第二气体的生成的游离基。
缝604和608朝着混合室530的区域定向(在图6中的混合室530的点C1周围)以向混合室530中的相同区域中注入游离基。以这一方式,可以有助于混合从缝604、608注入的游离基。也就是说,缝604、608被配置用于相对于竖直平面C1-C4成角度α和β注入气体的游离基。以这一方式,在两种气体的游离基与衬底120发生接触之前,在混合室530内有效混合游离基。混合室530的尺度可以被配置用于允许游离基在与衬底120发生接触之前在混合室530内充分扩散。一些游离基可以在与衬底120发生接触之前、期间或者之后恢复成不活跃状态。经过出口424排出剩余游离基和经恢复的气体。
如在下表1中所见,不同类型的气体具有不同电离能量级。因此根据向等离子体室供应的气体类型在等离子体的内电极与外电极之间施加不同电压电平。为了生成不同气体的游离基,可能由于用于不同气体的不同电离能量级而需要对应数目的等离子体室和电极组。
气体 | 电离能量(eV) |
H2 | 15.4 |
N2 | 15.58 |
O2 | 12.06 |
CO | 14.0 |
CO2 | 13.77 |
CH4 | 12.6 |
C2H6 | 11.5 |
C3H8 | 11.1 |
NH3 | 11.2 |
NO | 9.25 |
N2O | 12.9 |
H2O | 18.3 |
He | 24.48 |
Ne | 21.56 |
Ar | 15.78 |
Kr | 14.00 |
Xe | 12.13 |
表1
在图6的实施例中,提供两个分开的等离子体室516、518以接收两种不同气体。可以向与等离子体室516关联的电极410、520施加如下电压差,该电压差低于或者高于在与等离子体室518关联的电极414、522之间的另一电压差。通过提供两个不同等离子体室516、518,可以在单个游离基反应器138B中生成具有不同电离能量的两种不同气体的游离基。两个等离子体室516、518中的气体的其它条件(例如压强和温度)可以不同以按照需要生成游离基。
概括而言,游离基反应器136B充当具有一个等离子体室的两个游离基反应器。通过向一个游离基反应器中并入两个游离基反应器,可以减少线性沉积设备100的空间和成本。
图7是根据另一实施例的游离基反应器700的截面图。图7的游离基反应器700具有在游离基反应器700的相对侧形成的两个出口712、717。游离基反应器700具有通道704、724,这些通道经由通道704、724和孔708、728向等离子体室716、736提供气体。内电极712、732沿着等离子体室716、736的纵向方向延伸以与包围等离子体室716、736的外电极结合而在等离子体室716、736中生成游离基。通过在两侧提供出口712、717,可以从游离基反应器700更有效排出过量气体或者气体的游离基。
图8是根据另一实施例的游离基反应器800的截面图。除了沿着竖直平面D1-D3和D2-D4对准通道810、812、孔814、816、等离子体室832、834、内电极818、820和缝826、828之外,游离基反应器800具有与游离基反应器136B相似的结构。具体而言,通道810从气体源接收第一气体并且经由孔814向等离子体室832中注入第一气体。通道812从另一气体源接收第二气体并且经由孔816向等离子体室834中注入第二气体。
通过跨内电极818、820和外电极822、824施加电压,在等离子体室832、834中生成第一和第二气体的游离基。然后经由缝826、828向混合室830中注入生成的游离基。混合室830可以具有充分高度以允许游离基随着游离基沿着混合室830向衬底120上行进而充分混合。经由出口842排出剩余游离基和/或气体。
图9是根据一个实施例的游离基反应器900的截面图。游离基反应器900具有通道904、906、孔908、910、等离子体室912、918、内电极916、914和缝920、926的与游离基反应器136B的部件相似的配置。然而游离基反应器900与游离基反应器136B不同在于游离基反应器900包括其中混合游离基的单独的第一混合室924。然后经由连通通道930向第二混合室934中注入混合的游离基。混合的游离基在第二混合室934下方与衬底120发生接触。通过提供从衬底120远离的分离混合室925,在与衬底120发生接触之前更均匀混合游离基。经由在游离基反应器900的一侧提供的出口902排出(恢复成不活跃状态的)剩余游离基和/或气体。在另一实施例中,出口形成于游离基反应器900的两侧上。
也可以使用各种其它配置的游离基反应器。虽然图4至图9中的游离基反应器的实施例包括两个等离子体室,但是其它实施例可以包括多于两个等离子体室。此外,等离子体室和电极可以具有除圆柱形之外的其它形状。也有可能具有位于游离基反应器的不同竖直位置的不同室。另外,除了缝或者孔之外的连通通道可以连接到等离子体室。
图10是图示根据一个实施例的向衬底上注入混合的游离基的工艺的流程图。经由连接到气体源的通道向游离基反应器中的第一等离子体室中注入1010第一气体。在第一等离子体室内,在第一条件下生成1020第一气体的游离基。第一条件可以包括跨与第一等离子体室关联的内电极和外电极施加第一电压差电平。第一条件可以包括在某些范围内维持第一等离子体室内的等离子体或者气体的压强和温度。
经由连接到气体源的另一通道向相同游离基反应器中的第二等离子体室中注入1030第二气体。在第二等离子体室内,在第二条件下生成1040第一气体的游离基。第二条件可以包括跨与第二等离子体室关联的内电极和外电极施加第二电压差电平。第二条件可以包括在某些范围内维持第二等离子体室内的等离子体或者气体的压强和温度。第二条件的至少一个要素不同于第一条件的对应要素。
然后向其中混合1050游离基的混合室中注入在第一和第二等离子体室中生成的游离基。然后向衬底上注入1060混合的游离基。
图10中的工艺序列仅为示例,并且可以使用不同序列。例如可以与注入1030第二气体和生成1040第二气体的游离基的工艺并行或者在这些工艺之后执行注入1010第一气体和生成1020第一气体的游离基的工艺。
虽然上文已经参照若干实施例描述本发明,但是可以在本发明的范围内进行各种修改。因而本发明的公开内容旨在于举例说明、但是并非限制在所附权利要求中阐述的本发明的范围。
Claims (20)
1.一种用于在衬底上沉积一个或者多个材料层的游离基反应器,包括:
与所述衬底装配于其上的基座相邻放置的本体,所述本体形成有:
第一等离子体室,被配置用于接收第一气体,
第二等离子体室,被配置用于接收第二气体,以及
混合室,连接到所述第一等离子体室和所述第二等离子体室以从所述第一等离子体室和所述第二等离子体室接收所述第一气体的游离基和所述第二气体的游离基;
第一内电极,在所述第一等离子体室内延伸,所述第一内电极被配置用于通过跨所述第一内电极和第一外电极施加第一电压差在所述第一等离子体室内生成所述第一气体的所述游离基;以及
第二内电极,在所述第二等离子体室内延伸,所述第二内电极被配置用于通过跨所述第二内电极和第二外电极施加第二电压差在所述第二等离子体室内生成所述第二气体的所述游离基。
2.根据权利要求1所述的游离基反应器,其中所述本体还形成有混合室,所述第一气体的所述游离基和所述第二气体的所述游离基在与所述衬底发生接触之前在所述混合室中混合。
3.根据权利要求2所述的游离基反应器,其中所述本体还形成有将所述第一等离子体室连接到第一气体源的第一通道和将所述第二等离子体室连接到第二气体源的第二通道。
4.根据权利要求3所述的游离基反应器,其中所述本体还形成有将所述第一等离子体室与所述混合室连接的至少一个第一穿孔和将所述第二等离子体室与所述混合室连接的至少一个第二穿孔。
5.根据权利要求4所述的游离基反应器,其中沿着第一平面对准所述第一通道、所述第一内电极、所述第一等离子体室和所述第一穿孔;并且沿着相对于所述第一平面成角度定向的第二平面对准所述第二通道、所述第二内电极、所述第二等离子体室和所述第二穿孔。
6.根据权利要求4所述的游离基反应器,其中所述第一穿孔和所述第二穿孔朝着所述混合室内的相同内部区域定向。
7.根据权利要求1所述的游离基反应器,其中所述游离基反应器放置于所述基座上方。
8.根据权利要求1所述的游离基反应器,其中所述本体在所述游离基反应器的相对侧形成有两个出口。
9.根据权利要求1所述的游离基反应器,其中所述本体形成有:第一混合室,在所述第一混合室中,从所述第一等离子体室和所述第二等离子体室注入所述第一气体的所述游离基和所述第二气体的所述游离基以用于混合;第二混合室,与所述衬底相向,用于允许经混合的游离基与所述衬底发生接触;以及连通通道,连接所述第一混合室和所述第二混合室。
10.根据权利要求1所述的游离基反应器,其中所述游离基反应器用于对所述衬底执行原子层沉积(ALD)。
11.一种用于使用原子层沉积(ALD)在衬底上沉积一个或者多个材料层的沉积装置,包括:
基座,被配置用于装配衬底;
游离基反应器,包括:
与所述基座相邻放置的本体,所述本体形成有:
第一等离子体室,被配置用于接收第一气体,
第二等离子体室,被配置用于接收第二气体,以及
混合室,连接到所述第一等离子体室和所述第二等离子体室以从所述第一等离子体室和所述第二等离子体室接收所述第一气体的游离基和所述第二气体的游离基;
第一内电极,在所述第一等离子体室内延伸,所述第一内电极被配置用于通过跨所述第一内电极和第一外电极施加第一电压差在所述第一等离子体室内生成所述第一气体的所述游离基;以及
第二内电极,在所述第二等离子体室内延伸,所述第二内电极被配置用于通过跨所述第二内电极和第二外电极施加第二电压差在所述第二等离子体室内生成所述第二气体的所述游离基;以及
致动器,被配置用于引起在所述基座和所述游离基反应器之间的相对移动。
12.根据权利要求11所述的沉积装置,其中所述本体还形成有混合室,所述第一气体的所述游离基和所述第二气体的所述游离基在与所述衬底发生接触之前在所述混合室中混合。
13.根据权利要求12所述的沉积装置,其中所述本体还形成有将所述第一等离子体室连接到第一气体源的第一通道和将所述第二等离子体室连接到第二气体源的第二通道。
14.根据权利要求13所述的沉积装置,其中所述本体还形成有将所述第一等离子体室与所述混合室连接的至少一个第一穿孔和将所述第二等离子体室与所述混合室连接的至少一个第二穿孔。
15.根据权利要求14所述的沉积装置,其中沿着第一平面对准所述第一通道、所述第一内电极、所述第一等离子体室和所述第一穿孔;并且沿着相对于所述第一平面成角度定向的第二平面对准所述第二通道、所述第二内电极、所述第二等离子体室和所述第二穿孔。
16.根据权利要求14所述的沉积装置,其中所述第一穿孔和所述第二穿孔朝着所述混合室内的相同内部区域定向。
17.根据权利要求11所述的沉积装置,其中所述本体在所述游离基反应器的相对侧形成有两个出口。
18.根据权利要求11所述的沉积装置,其中所述本体形成有:第一混合室,在所述第一混合室中,从所述第一等离子体室和所述第二等离子体室注入所述第一气体的所述游离基和所述第二气体的所述游离基以用于混合;第二混合室,与所述衬底相向,用于允许经混合的游离基与所述衬底发生接触;以及连通通道,连接所述第一混合室和所述第二混合室。
19.一种使用原子层沉积(ALD)在衬底上沉积一层或者多层的方法,包括:
向形成于游离基反应器中的第一等离子体室中注入第一气体;
在第一条件下在所述第一等离子体室中生成所述第一气体的游离基;
向形成于所述游离基反应器中的第二等离子体室中注入第二气体;
在与所述第一条件不同的第二条件下在所述第二等离子体室中生成所述第二气体的游离基;
在形成于所述游离基反应器中的混合室中混合所述第一气体的所述游离基与所述第二气体的所述游离基;以及
向所述衬底上注入所述混合的游离基。
20.根据权利要求19所述的方法,其中所述第一条件包括跨所述第一等离子体室的内电极和外电极施加第一电压电平,并且所述第二条件包括跨所述第二等离子体室的内电极和外电极施加第二电压电平。
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CN104332427A (zh) * | 2013-07-22 | 2015-02-04 | Asmip控股有限公司 | 具有等离子体能力的半导体反应室 |
CN104332427B (zh) * | 2013-07-22 | 2019-08-02 | Asm Ip控股有限公司 | 具有等离子体能力的半导体反应室 |
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TW201229302A (en) | 2012-07-16 |
KR20130086620A (ko) | 2013-08-02 |
KR20140138328A (ko) | 2014-12-03 |
WO2012061278A1 (en) | 2012-05-10 |
US20120114877A1 (en) | 2012-05-10 |
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