CN104332427B - 具有等离子体能力的半导体反应室 - Google Patents

具有等离子体能力的半导体反应室 Download PDF

Info

Publication number
CN104332427B
CN104332427B CN201410331047.6A CN201410331047A CN104332427B CN 104332427 B CN104332427 B CN 104332427B CN 201410331047 A CN201410331047 A CN 201410331047A CN 104332427 B CN104332427 B CN 104332427B
Authority
CN
China
Prior art keywords
stimulated
generation area
substance generation
substance
process chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410331047.6A
Other languages
English (en)
Other versions
CN104332427A (zh
Inventor
R·B·米利根
F·阿洛克塞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM IP Holding BV
Original Assignee
ASM IP Holding BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM IP Holding BV filed Critical ASM IP Holding BV
Priority to CN202210250487.3A priority Critical patent/CN114628217A/zh
Priority to CN201810755771.XA priority patent/CN108899296B/zh
Publication of CN104332427A publication Critical patent/CN104332427A/zh
Application granted granted Critical
Publication of CN104332427B publication Critical patent/CN104332427B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

一种处理室，其包括：反应室，其具有处理区域；处理气体入口，其与处理区域连通；第一受激发物质生成区，其与处理气体入口连通；以及第二受激发物质生成区，其与处理气体入口连通。一种处理基板的方法，其包括以下步骤：在处理区域内加载基板；激活第一受激发物质生成区，以在第一脉冲期间向处理区域提供第一受激发物质前驱物；以及激活第二受激发物质生成区，以在第二脉冲期间向处理区域提供不同于第一受激发物质前驱物的第二受激发物质前驱物。

Description

具有等离子体能力的半导体反应室
技术领域
本公开总体上涉及半导体工艺，并且更特别地涉及用于向反应室中的基板或晶片提供处理气体的受激发物质(excited species)的设备和方法。
背景技术
半导体制造工艺通常在受控条件下在基板支撑在室内的情况下进行。出于许多目的，半导体基板(例如，晶片)在处理室内部被加热。例如，基板可通过与内热式晶片支座或“卡盘(chuck)”的直接物理接触而被加热。“基座(susceptor)”是在其中晶片和基座吸收热量的系统中使用的晶片支撑件。
用于工艺的重要的受控条件中的一些包括但不限于：室的压力、进入室的流体流速、反应室的温度、流入反应室中的流体的温度和晶片加载期间晶片在基座上的位置。
在反应室内加热可以以许多方式进行，包括定位在基板表面上方用于直接加热基座的灯组或灯阵列或定位在基座下方的基座加热器/台座加热器。传统地，台座式加热器通过底壁延伸到室中，而基座被安装在加热器的顶部表面上。加热器可包括电阻加热元件，该电阻加热元件封闭在加热器内以提供传导热并增加基座温度。
一致的工艺和一致的结果通常需要对系统中的处理气体进行小心控制和计量。用于控制处理气体的最后地点之一是在喷淋头处，在那里处理气体然后接触反应室中的晶片。此外，由于喷淋头孔变得阻塞或发生在喷淋头内的寄生前驱物(precursor)反应，获得最佳流速和均匀性有时可能是困难的。
基于等离子体的反应器可使用集成到反应器的直接等离子体或设置在反应器上游的远程等离子体。直接等离子体可形成更强烈和更有效的等离子体，但也可能损坏基板。相反，远程等离子体降低损坏基板的风险，但可能遇到受激发物质较不活跃且因此不与基板上的薄膜恰当地反应的问题。
发明内容
各种方面和实现公开在本文中，其涉及具有用于处理晶片的等离子体能力的反应室。在一方面，处理室包括：反应室，其具有处理区域；处理气体入口，其与处理区域连通；第一受激发物质生成区，其与处理气体入口连通；以及第二受激发物质生成区，其与处理气体入口连通。
在一个实现中，第一和第二受激发物质生成区可彼此连通。第一和第二受激发物质生成区可选择性地彼此连通。阀可被定位在第一受激发物质生成区和处理气体入口之间。阀可被定位在第二受激发物质生成区和处理气体入口之间。第一和第二受激发物质生成区可以是非同轴的。
第一和第二受激发物质生成区可以同轴对齐。第一和第二受激发物质生成区可生成可燃性不相容的受激发前驱物。第一受激发物质生成区可激发氟基化学物质，并且第二受激发物质生成区可激发氯基化学物质。第一和第二受激发物质生成区还可各自包括电感耦合等离子体发生器。第一和第二受激发物质生成区的电感耦合等离子体发生器可被各自单独地控制。第一和第二受激发物质生成区还可各自包括电容耦合等离子体发生器。第一和第二受激发物质生成区的电容耦合等离子体发生器可被各自单独地控制。
处理室还可包括定位在第一和第二受激发物质生成区之间的惰性气体流。第一和第二受激发物质生成区可通过惰性气体阀来分隔开。第一和第二受激发物质生成区可至少部分地由氧化铝或石英构成。第一和第二受激发物质生成区可用单线圈来激励。
在另一方面，一种处理基板的方法可包括以下步骤：在处理区域内加载基板；激活第一受激发物质生成区，以在第一脉冲期间向处理区域提供第一受激发物质前驱物；以及激活第二受激发物质生成区，以在第二脉冲期间向处理区域提供不同于第一受激发物质前驱物的第二受激发物质前驱物。
在一种实现中，第一和第二受激发物质生成区是不同的生成区。
在另一方面，将多个前驱物输送到处理区域的方法可包括以下步骤：提供与处理区域连通的第一和第二受激发物质生成区；使第一前驱物选择性地流动通过第一受激发物质生成区，同时激发第一受激发物质生成区；以及使第二前驱物选择性地流动通过第二受激发物质生成区，同时激发第二受激发物质生成区。
提供本发明内容用于以简化形式引入将在下面的具体实施方式中进一步描述的一系列概念。本发明内容并非旨在确定要求保护的主题的关键特征或必要特征，也不旨在用来限制要求保护的主题的范围。此外，要求保护的主题并不限于解决本公开的任何部分中指出的任何或全部缺点的实现。
附图说明
图1示出具有双等离子体生成区域的反应室的示意性剖视图。
图2示出双等离子体生成区域的示意性剖视图。
图3示出双等离子体生成区域的示意性剖视图。
图4示出双等离子体生成区域的示意性剖视图。
图5示出第二方面的双等离子体生成区域的示意性俯视剖视图。
图6示出大体沿图5的线6-6截取的第二方面的双等离子体生成区域的示意性俯视剖视图。
图7示出第二方面的双等离子体生成区域的示意性剖视图。
图8示出第二方面的双等离子体生成区域的示意性剖视图。
图9示出第三方面的双等离子体生成区域的示意性俯视剖视图。
图10示出第三方面的双等离子体生成区域的示意性俯视剖视图。
图11示出第四方面的双等离子体生成区域的放大的示意性剖视图。
具体实施方式
本发明的方面和实现可以以功能块组件和各种处理步骤的形式描述。这样的功能块可通过任意数量的硬件或软件组件来实现，所述硬件或软件组件被配置成执行指定的功能并实现各种结果。例如，本发明的各方面可采用能执行多种功能的各种传感器、检测器、流控制装置、加热器等等。此外，可结合任意数量的处理方法来实践本发明的各方面和实现，并且所描述的设备和系统可采用任意数量的处理方法，并且所描述的设备和方法仅仅是本发明的应用的示例。
图1示出具有反应室20的处理室18，反应室20具有上室22和下室24。上室22包括喷淋头26，而下室24通常包括本领域公知的基座组件28，用以接纳晶片30来供加载、卸载和处理。虽然本公开示出并描述了具有上部部段和下部部段的分割室中的喷淋头26，但是把喷淋头26并入非分割室反应器或无喷淋头的交叉流反应器中落在本公开的精神和范围内。如另外所公知的，喷淋头26由入口歧管(manifold)32(或歧管端口喷射器或交叉流反应器中的其它合适的喷射装置)供料，使得反应室内的气体流由箭头33表示。
入口歧管32可包括前驱物输送系统中公知的阀34，并且可以是标准气动阀、机械阀、惰性气体阀、或任何其它合适的阀机构。阀34的上游在一些实现中可以是分离管36，分离管36具有类似于阀34的另外的阀38和40，其用来选择性地使各种前驱物入口彼此隔离。虽然未特别地示出，另外的吹扫(purge)或真空端口和/或线路(line)可朝阀38和40的下游取向以辅助吹扫分离管36和入口歧管32。阀34、38和40可用控制器42分别经由控制线路44、46和48或用任何其它合适的控制系统单独地控制。
前驱物A50通过阀38上游的出口管52，而前驱物B54通过阀40上游的出口管56。前驱物A50通过第一受激发物质生成区58，而前驱物B54通过第二受激发物质生成区60。如可以看到的，合适的阀可用来使第一和第二受激发物质生成区58和60隔离，使得流动通过相应的受激发物质生成区中的每一个的前驱物之间的反应可被防止。
第一和第二受激发物质生成区58和60中的每一个在每个区的外周边上可包括法拉第(Faraday)屏蔽62。第一受激发物质生成区58可包括控制线路64和66，而第二受激发物质生成区60可包括控制线路68和70。各种控制线路64、66、68和70连接到受激发物质生成控制器72，如以下将更详细描述的。
图2示出第一和第二受激发物质生成区58、60的剖视图。第一和第二受激发物质生成区58和60两者包括法拉第屏蔽62、安全护套74、电线圈76和生成区配管78。冷却区域80形成在安全护套74和生成区配管78之间以提供冷却的惰性气体流，以便接触定位在其中的电线圈76并使其保持合适的操作温度。生成区配管78包括在其中的开口82，用于接纳前驱物A50或前驱物B，这取决于该配管定位在哪一个受激发物质生成区中。有利地，开口82与合适的前驱物瓶流体连通，以在处理气体到达反应室之前在通过闸阀38或40并最终通过闸阀34之前向出口管52或56供应处理气体。生成区配管78可由用于在开口82中使用的前驱物的任何合适的材料构成。例如，当使用掺入氟、氧、或氢的前驱物时，生成区配管可以为氧化铝，而当使用掺入氯、氧或氯化硅的前驱物时，生成区配管可以为石英。关键在于蚀刻或沉积化学物质与生成区配管材料相容而没有不期望的反应或粒子生成。电线圈76连接到控制线路64、66或68、70(根据需要)以在受激发物质生成区提供电流，从而形成磁场并在前驱物A50或前驱物B54的合适的开口82内形成受激发物质。
现在参见控制器72，供能和匹配电路84在控制器72内示出，而开关电路86也可被集成到控制器72内并根据合适的工艺处方或程序由处理室控制器(未示出)操作。供能和匹配电路84被设计成向电线圈76提供合适的阻抗和功率以在合适的生成区配管78内生成足够充足的受激发物质，使得受激发物质可与惰性气体一起移动通过闸阀、喷淋头以及最终晶片表面。还可进一步设想，第一和第二受激发物质生成区中的每一个可能需要不同的或可变的功率，在这种情况下，控制器72可被调节以根据需要提供这种可变电流，并且供能电路可利用RF或任何其它合适的机构来供能。返回参见阀34、38和40，致动器88被定位在每个阀中并且被电控制或气动控制来打开或关闭，这取决于正在执行的过程步骤。本领域的技术人员将立即理解，任何合适的机构可被并入以防止/允许气体流动通过阀，包括致动器88或本领域中已知的任何其它装置或方法。优选地，阀将能够具有高的基本传导性(radicalconductance)以限制和/或防止受激发物质的损耗。
图3示出如由箭头90所指示的被引导通过生成区配管78的前驱物A50，而图4示出如由箭头92所指示的被引导通过生成区配管78的前驱物B54。在图3中，当前驱物A50对于晶片工艺为必要时，闸阀40保持处于关闭位置，而闸阀38和闸阀34在适当量的能量已通过线圈76传递到前驱物之后沿与箭头94相关联的方向打开。类似地，当前驱物B54对于晶片工艺为必要时，闸阀38保持处于关闭位置，而闸阀40和闸阀34在适当量的能量已通过线圈76传递到前驱物之后沿与箭头94相关联的方向打开。
在操作中，图3和图4所示的过程单独地执行，使得前驱物无论是否被激发都不相遇。在某些情况下，如果前驱物混合，严重的损坏将随着发生。此外，受激发物质生成区可彼此分离，使得即使受激发物质生成区都具有激活的物质，在室吹扫步骤期间也只有激活的物质中的一个到达反应室，或两个都不到达。在另一个实现中，开关电路86可用来每次选择性地激活仅一个合适的受激发物质生成区以降低功率消耗。最后，如可在图4中看到的，在一个实现中，第一和第二受激发物质生成区可彼此错开并且是非同轴的。
图5至图8示出了在单个法拉第屏蔽62内的第一和第二受激发物质生成区域96的第二实施例。在该第二实现中，前驱物A50和前驱物B54被定位成彼此同轴并且共享相同的受激发物质生成源或电线圈76和安全护套74。再次地，类似于之前的实现，冷却的惰性气体可流经电线圈76并通过冷却区域80。第二实现96也可将惰性气体流98直接引入通过第一和第二受激发物质生成区两者以将相应的受激发物质前驱物引导到反应室。
在所公开的第二实现96中，前驱物B54流动通过由区域壁102和104形成的外部区域100，区域壁102和104可形成为由与前驱物互补或相容的材料(氧化铝或石英，作为非限制示例)形成的圆柱形形状。间隙106可径向朝区域壁104的内部定位，而区域壁108形成中心开口110。区域壁108也优选地由与在其中使用的前驱物互补和相容的材料形成，并且作为非限制示例，可以为氧化铝或石英。
图7示出被激活并且如箭头112所指示地移动通过中心开口110的前驱物A50。前驱物A50可与惰性气体98一起移动通过第一受激发物质生成区并可离开第一受激发物质生成区，因为闸阀被打开以允许中心开口110和反应室20之间的连通。箭头114指示前驱物B54的流动路径并指示闸阀阻挡流动，使得第二受激发物质生成区内的前驱物B54不能离开外部区域100。因此，选择性地受激发的前驱物可有选择地提供给反应室而具有非相容前驱物。
图8示出被激活并且如箭头116所示地移动通过外部区域100的前驱物B54。前驱物B54可与惰性气体98一起移动通过第二受激发物质生成区并且可离开第二受激发物质生成区，因为闸阀被打开以允许外部区域100和反应室20之间的连通。箭头118指示前驱物A50的流动路径并指示闸阀阻挡流动，使得第一受激发物质生成区内的前驱物A50不能离开中心开口110。在操作中，在蚀刻或沉积过程期间的循环过程中，前驱物A50将提供给反应室20而没有前驱物B54并且随后前驱物B54将提供给反应室20而没有前驱物A50。以这种方式，不相容的前驱物可在反应室内使用而没有损坏或危险。
图9和10示出如以上所示并描述的、具有电容耦合等离子体发生器而不是电感耦合等离子体发生器的第三实现的受激发物质生成区120的示图。再一次，区域壁102和104可以为圆柱形形状并且限定外部区域100，在外部区域100中，前驱物A50可被激发并且然后选择性地提供给反应室20。等离子体发生器可包括分别连接到控制线路64和66的内电极122和外电极124。在操作中，电容耦合等离子体的内电极122和外电极124被控制器72激活，并且在使前驱物A50流入反应室20中用于沉积或蚀刻工艺之前可选择性地激发该前驱物。在功能上，除了并入电容耦合发生器而不是电感耦合发生器以外，第三实现的受激发物质生成区域120与之前所述的实施例类似。此外，第三实现的受激发物质生成区域120可使用类似于第一方面的非同轴布置的生成区，并且第二受激发物质生成区120可以以类似于之前所述的那些的方式定位成与反应室选择性连通而不背离本公开的精神和范围。
图11示出了具有法拉第屏蔽62和安全护套74的受激发物质生成区126的第四实现。类似于之前的电容耦合等离子体发生器，内电极122和外电极124分别定位在前驱物区域的内部和外部。外部区域128由第一壁130和第二壁132形成，其中前驱物在两个壁之间流动。内部区域134由第三壁136和第四壁138形成。壁130、132、136和138可由任何合适的材料形成(氧化铝、石英等)，这取决于与这些特定壁接触的前驱物。在操作中，单个电容耦合等离子体发生器能在内部区域134和外部区域128两者中激发前驱物，并且那些受激发物质的流动由闸阀控制。替代地，单独的电容耦合等离子体发生器可用于每个单独的前驱物，并且每个前驱物的受激发物质的流动可通过闸阀或基于等离子体操作而独立地控制。
在操作中，晶片30被加载在基座28上，并且第一前驱物在通过必要的闸阀并通过喷淋头26进入反应室之前在第一或第二受激发物质生成区中的一个内被激活或激发。同时，第二前驱物可保持在受激发物质生成区中的另一个内，直到闸阀打开以允许通过其中。接下来，第一前驱物流因为闸阀而停止并且第二受激发前驱物或惰性气体可提供给反应室。既然已示出和描述了等离子体发生器的多个实现，可连续操作单个CCP或ICP以在两个受激发物质生成区中保持受激发物质，或者刚好在反应室中需要受激发物质之前使用和触发单独的CCP和ICP。以这种方式，在工艺期间前驱物彼此不接触的情况下，入口歧管和反应室可选择性地接纳任意数量的前驱物的受激发物质。因而，可看到，通过使在单独的等离子体生成区中激活的受激发物质选择性地流动，不相容的受激发前驱物可用来处理晶片或蚀刻反应室。
用于其中具有双等离子体生成区域的反应室的方法和设备的这些与其它实施例可结合概念、实施例和构型，如参照用于测量以上所述的装置的设备的实施例所描述的。所示出和所描述的特定实现是对本发明和其最佳模式的说明并且不旨在以任何其它方式限制方面和实现的范围。实际上，为简洁起见，系统的常规制造、连接、制备和其它功能方面可不详细描述。此外，各个附图中所示的任何连接线旨在表示各种元件之间的示例性功能关系和/或物理联接。许多替代的或额外的功能关系或物理连接可存在于实际系统中，和/或可不存在于一些实施例中。此外，其它设计的各种方面和实现可被结合到本公开的范围内。
如本文所用，术语“包括”、“包含”、或它们的任何变型旨在引用非排他的包括，使得包括一系列要素的过程、方法、制品、组合物或设备不仅包括这些所叙述的要素，而且还可包括未明确列举的或这样的过程、方法、制品、组合物或设备固有的其它要素。除了那些没有明确叙述的，用于本发明的实践的上述结构、布置、应用、比例、元素、材料或部件的其它组合和/或修改可改变，或者说是特别适于具体环境、制造规格、设计参数或其它操作要求而不脱离总原则。

Claims (20)

1.一种处理室，包括：
反应室，其具有处理区域；
处理气体入口，其与所述处理区域连通；
第一受激发物质生成区，其与所述处理气体入口连通；以及
第二受激发物质生成区，其与所述处理气体入口连通，
阀，其被定位在所述第一受激发物质生成区和所述处理气体入口之间，以及
另一个阀，其被定位在所述第二受激发物质生成区和所述处理气体入口之间，
其中所述第一和第二受激发物质生成区选择性地彼此连通。
2.如权利要求1所述的处理室，其特征在于，所述第一和第二受激发物质生成区彼此连通。
3.如权利要求1所述的处理室，其特征在于，所述处理室还包括入口歧管阀。
4.如权利要求1-3中的任一项所述的处理室，其特征在于，所述第一和第二受激发物质生成区是非同轴的。
5.如权利要求1-3中的任一项所述的处理室，其特征在于，所述第一和第二受激发物质生成区生成可燃性不相容的前驱物。
6.如权利要求1-3中的任一项所述的处理室，其特征在于，所述第一受激发物质生成区激发氟基化学物质并且所述第二受激发物质生成区激发氯基化学物质。
7.如权利要求1-3中的任一项所述的处理室，其特征在于，所述第一和第二受激发物质生成区还各自包括电感耦合等离子体发生器。
8.如权利要求7所述的处理室，其特征在于，所述第一和第二受激发物质生成区的电感耦合等离子体发生器被各自单独地控制。
9.如权利要求1-3中的任一项所述的处理室，其特征在于，所述第一和第二受激发物质生成区还各自包括电容耦合等离子体发生器。
10.如权利要求9所述的处理室，其特征在于，所述第一和第二受激发物质生成区的电容耦合等离子体发生器被各自单独地控制。
11.如权利要求1-3中的任一项所述的处理室，其特征在于，所述第一和第二受激发物质生成区至少部分地由氧化铝或石英构成。
12.如权利要求1-3中的任一项所述的处理室，其特征在于，所述第一和第二受激发物质生成区用单线圈来激励。
13.一种处理室，包括：
反应室，其具有处理区域；
处理气体入口，其与所述处理区域连通；
第一受激发物质生成区，其与所述处理气体入口连通；以及
第二受激发物质生成区，其与所述处理气体入口连通，
其中阀被定位在所述第一受激发物质生成区和所述处理气体入口之间。
14.一种处理室，包括：
反应室，其具有处理区域；
处理气体入口，其与所述处理区域连通；
第一受激发物质生成区，其与所述处理气体入口连通；以及
第二受激发物质生成区，其与所述处理气体入口连通，
其中阀被定位在所述第二受激发物质生成区和所述处理气体入口之间。
15.如权利要求1、13和14中任一项所述的处理室，其特征在于，所述第一和第二受激发物质生成区同轴对齐。
16.如权利要求15所述的处理室，其特征在于，所述处理室还包括定位在所述第一和第二受激发物质生成区之间的惰性气体流。
17.如权利要求1、13和14中任一项所述的处理室，其特征在于，所述阀包括惰性气体阀。
18.一种处理基板的方法，包括以下步骤：
在处理区域内加载基板；
激活第一受激发物质生成区，以在第一脉冲期间向所述处理区域提供第一受激发物质前驱物；以及
激活第二受激发物质生成区，以在第二脉冲期间向所述处理区域提供不同于所述第一受激发物质前驱物的第二受激发物质前驱物，
其中所述第一和第二受激发物质生成区选择性地彼此连通。
19.如权利要求18所述的方法，其特征在于，所述第一和第二受激发物质生成区是不同的生成区。
20.一种将多个前驱物输送到处理区域的方法，包括以下步骤：
提供与所述处理区域连通的第一和第二受激发物质生成区；
使第一前驱物选择性地流动通过所述第一受激发物质生成区，同时激发所述第一受激发物质生成区；以及
使第二前驱物选择性地流动通过所述第二受激发物质生成区，同时激发所述第二受激发物质生成区，
其中所述第一和第二受激发物质生成区选择性地彼此连通。
CN201410331047.6A 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室 Active CN104332427B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202210250487.3A CN114628217A (zh) 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室
CN201810755771.XA CN108899296B (zh) 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/948,055 2013-07-22
US13/948,055 US9018111B2 (en) 2013-07-22 2013-07-22 Semiconductor reaction chamber with plasma capabilities

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN201810755771.XA Division CN108899296B (zh) 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室
CN202210250487.3A Division CN114628217A (zh) 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室

Publications (2)

Publication Number Publication Date
CN104332427A CN104332427A (zh) 2015-02-04
CN104332427B true CN104332427B (zh) 2019-08-02

Family

ID=52343926

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201810755771.XA Active CN108899296B (zh) 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室
CN202210250487.3A Pending CN114628217A (zh) 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室
CN201410331047.6A Active CN104332427B (zh) 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CN201810755771.XA Active CN108899296B (zh) 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室
CN202210250487.3A Pending CN114628217A (zh) 2013-07-22 2014-07-11 具有等离子体能力的半导体反应室

Country Status (4)

Country Link
US (2) US9018111B2 (zh)
KR (1) KR102166199B1 (zh)
CN (3) CN108899296B (zh)
TW (1) TWI626700B (zh)

Families Citing this family (372)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
TWI622664B (zh) 2012-05-02 2018-05-01 Ａｓｍ智慧財產控股公司 相穩定薄膜，包括該薄膜之結構及裝置，及其形成方法
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
SG11201603358PA (en) * 2014-03-04 2016-09-29 Canon Anelva Corp Vacuum process apparatus and vacuum process method
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
JP6054470B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置
JP5990626B1 (ja) * 2015-05-26 2016-09-14 株式会社日本製鋼所 原子層成長装置
JP6054471B2 (ja) 2015-05-26 2016-12-27 株式会社日本製鋼所 原子層成長装置および原子層成長装置排気部
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
JP6616265B2 (ja) * 2015-10-16 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 加熱部、基板処理装置、及び半導体装置の製造方法
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US20170162366A1 (en) * 2015-12-08 2017-06-08 Asm Ip Holding B.V. Film forming apparatus, recording medium, and film forming method
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
TWI794238B (zh) * 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
TW202104656A (zh) 2019-03-28 2021-02-01 美商蘭姆研究公司 噴淋頭護罩
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210027601A (ko) 2019-08-29 2021-03-11 삼성전자주식회사 플라즈마 표면처리 장치 및 이를 구비하는 기판 처리 시스템과 이를 이용한 플라즈마 표면처리 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
GB2590614B (en) * 2019-12-16 2022-09-28 Dyson Technology Ltd Method and apparatus for use in generating plasma
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326427A (en) * 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
CN103201408A (zh) * 2010-11-05 2013-07-10 思诺斯技术公司 具有多个等离子体室的游离基反应器

Family Cites Families (1144)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089507A (en) 1963-05-14 Air eject system control valve
US2161626A (en) 1937-09-25 1939-06-06 Walworth Patents Inc Locking device
US2745640A (en) 1953-09-24 1956-05-15 American Viscose Corp Heat exchanging apparatus
US3094396A (en) 1959-07-07 1963-06-18 Continental Can Co Method of and apparatus for curing internal coatings on can bodies
US2990045A (en) 1959-09-18 1961-06-27 Lipe Rollway Corp Thermally responsive transmission for automobile fan
US3232437A (en) 1963-03-13 1966-02-01 Champlon Lab Inc Spin-on filter cartridge
US4393013A (en) 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US3833492A (en) 1971-09-22 1974-09-03 Pollution Control Ind Inc Method of producing ozone
US3862397A (en) 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
US3854443A (en) 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
US3887790A (en) 1974-10-07 1975-06-03 Vernon H Ferguson Wrap-around electric resistance heater
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4054071A (en) 1975-06-17 1977-10-18 Aetna-Standard Engineering Company Flying saw with movable work shifter
DE2610556C2 (de) 1976-03-12 1978-02-02 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt
US4194536A (en) 1976-12-09 1980-03-25 Eaton Corporation Composite tubing product
US4181330A (en) 1977-03-22 1980-01-01 Noriatsu Kojima Horn shaped multi-inlet pipe fitting
US4176630A (en) 1977-06-01 1979-12-04 Dynair Limited Automatic control valves
US4145699A (en) 1977-12-07 1979-03-20 Bell Telephone Laboratories, Incorporated Superconducting junctions utilizing a binary semiconductor barrier
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4322592A (en) 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4479831A (en) 1980-09-15 1984-10-30 Burroughs Corporation Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
US4436674A (en) 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
US4414492A (en) 1982-02-02 1983-11-08 Intent Patent A.G. Electronic ballast system
US4401507A (en) 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4499354A (en) 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
US4570328A (en) 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
JPS6050923A (ja) 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
USD288556S (en) 1984-02-21 1987-03-03 Pace, Incorporated Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards
US4735259A (en) 1984-02-21 1988-04-05 Hewlett-Packard Company Heated transfer line for capillary tubing
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US4653541A (en) 1985-06-26 1987-03-31 Parker Hannifin Corporation Dual wall safety tube
US4789294A (en) 1985-08-30 1988-12-06 Canon Kabushiki Kaisha Wafer handling apparatus and method
KR940000915B1 (ko) 1986-01-31 1994-02-04 가부시기가이샤 히다찌세이사꾸쇼 표면 처리방법
US4654226A (en) 1986-03-03 1987-03-31 The University Of Delaware Apparatus and method for photochemical vapor deposition
US4722298A (en) 1986-05-19 1988-02-02 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US4718637A (en) 1986-07-02 1988-01-12 Mdc Vacuum Products Corporation High vacuum gate valve having improved metal vacuum joint
US4681134A (en) 1986-07-23 1987-07-21 Paris Sr Raymond L Valve lock
US5183511A (en) 1986-07-23 1993-02-02 Semiconductor Energy Laboratory Co., Ltd. Photo CVD apparatus with a glow discharge system
US4882199A (en) 1986-08-15 1989-11-21 Massachusetts Institute Of Technology Method of forming a metal coating on a substrate
US4753192A (en) 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
JPH0344472Y2 (zh) 1987-02-10 1991-09-18
US4976996A (en) 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US4821674A (en) 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4780169A (en) 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4827430A (en) 1987-05-11 1989-05-02 Baxter International Inc. Flow measurement system
US5221556A (en) 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
NO161941C (no) 1987-06-25 1991-04-30 Kvaerner Eng Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs.
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
USD327534S (en) 1987-07-30 1992-06-30 CLM Investments, Inc. Floor drain strainer
US4854263B1 (en) 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US4756794A (en) 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
JPH0648217B2 (ja) 1987-12-24 1994-06-22 川惣電機工業株式会社 溶融金属の連続測温装置
US5028366A (en) 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
FR2628985B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
US4978567A (en) 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
JP2859632B2 (ja) 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
US4857382A (en) 1988-04-26 1989-08-15 General Electric Company Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides
US5178682A (en) 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
US4986215A (en) 1988-09-01 1991-01-22 Kyushu Electronic Metal Co., Ltd. Susceptor for vapor-phase growth system
JP2918892B2 (ja) 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US4837185A (en) 1988-10-26 1989-06-06 Intel Corporation Pulsed dual radio frequency CVD process
US5119760A (en) 1988-12-27 1992-06-09 Symetrix Corporation Methods and apparatus for material deposition
JPH0834187B2 (ja) 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ
US5194401A (en) 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
JP2543224B2 (ja) 1989-04-25 1996-10-16 松下電子工業株式会社 半導体装置とその製造方法
US5192717A (en) 1989-04-28 1993-03-09 Canon Kabushiki Kaisha Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method
US5360269A (en) 1989-05-10 1994-11-01 Tokyo Kogyo Kabushiki Kaisha Immersion-type temperature measuring apparatus using thermocouple
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5060322A (en) 1989-07-27 1991-10-29 Delepine Jean C Shower room and ceiling element, especially for a shower room
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
JPH0734936Y2 (ja) 1990-01-16 1995-08-09 大日本スクリーン製造株式会社 処理液蒸気供給装置
JPH03277774A (ja) 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
DE4011933C2 (de) 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
US5273609A (en) * 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
JP2780866B2 (ja) 1990-10-11 1998-07-30 大日本スクリーン製造 株式会社 光照射加熱基板の温度測定装置
TW214599B (zh) 1990-10-15 1993-10-11 Seiko Epson Corp
JPH04115531U (ja) 1991-03-25 1992-10-14 ノリタケダイヤ株式会社 ワイヤーソー用ジヨイントパイプ
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
US5116018A (en) 1991-04-12 1992-05-26 Automax, Inc. Lockout modules
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5104514A (en) 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
JP3040212B2 (ja) 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
EP0533568A1 (en) 1991-09-17 1993-03-24 Sumitomo Electric Industries, Ltd. Superconducting thin film formed of oxide superconductor material, superconducting device utilizing the superconducting thin film and method for manufacturing thereof
JP3140111B2 (ja) 1991-11-19 2001-03-05 オリンパス光学工業株式会社 高倍率顕微鏡対物レンズ
US5199603A (en) 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
US5455069A (en) 1992-06-01 1995-10-03 Motorola, Inc. Method of improving layer uniformity in a CVD reactor
KR100293830B1 (ko) 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3148004B2 (ja) 1992-07-06 2001-03-19 株式会社東芝 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法
US5601641A (en) 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
KR100304127B1 (ko) 1992-07-29 2001-11-30 이노마다 시게오 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치
US5271967A (en) 1992-08-21 1993-12-21 General Motors Corporation Method and apparatus for application of thermal spray coatings to engine blocks
JPH06295862A (ja) 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
IT1257434B (it) 1992-12-04 1996-01-17 Cselt Centro Studi Lab Telecom Generatore di vapori per impianti di deposizione chimica da fase vapore
KR100238629B1 (ko) 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5421893A (en) 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
DE4311197A1 (de) 1993-04-05 1994-10-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle
US5404082A (en) 1993-04-23 1995-04-04 North American Philips Corporation High frequency inverter with power-line-controlled frequency modulation
US5354580A (en) 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
JPH0799162A (ja) 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
DE69415408T2 (de) 1993-06-28 1999-06-10 Canon K.K., Tokio/Tokyo Wärmeerzeugender, TaNO.8 enthaltender Widerstand, Substrat mit diesem wärmeerzeugenden Widerstand für Flüssigkeitsstrahlkopf, Flüssigkeitsstrahlkopf mit diesem Substrat, und Gerät für einen Flüssigkeitsstrahl mit diesem Flüssigkeitsstrahlkopf
US5415753A (en) 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US6122036A (en) 1993-10-21 2000-09-19 Nikon Corporation Projection exposure apparatus and method
US5413813A (en) 1993-11-23 1995-05-09 Enichem S.P.A. CVD of silicon-based ceramic materials on internal surface of a reactor
US5616947A (en) 1994-02-01 1997-04-01 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an MIS structure
US5681779A (en) 1994-02-04 1997-10-28 Lsi Logic Corporation Method of doping metal layers for electromigration resistance
US5589002A (en) 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
JP3211548B2 (ja) 1994-03-30 2001-09-25 ウシオ電機株式会社 誘電体バリア放電蛍光ランプ
JPH07283149A (ja) 1994-04-04 1995-10-27 Nissin Electric Co Ltd 薄膜気相成長装置
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
KR100306527B1 (ko) 1994-06-15 2002-06-26 구사마 사부로 박막반도체장치의제조방법,박막반도체장치
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
JP2709568B2 (ja) 1994-06-30 1998-02-04 日本プレシジョン・サーキッツ株式会社 ダウンフロー型スピンドライヤ
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
JP3632256B2 (ja) 1994-09-30 2005-03-23 株式会社デンソー 窒化シリコン膜を有する半導体装置の製造方法
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
FI97730C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
JPH08181135A (ja) 1994-12-22 1996-07-12 Sharp Corp 半導体装置の製造方法
JP3151118B2 (ja) 1995-03-01 2001-04-03 東京エレクトロン株式会社 熱処理装置
US5518549A (en) 1995-04-18 1996-05-21 Memc Electronic Materials, Inc. Susceptor and baffle therefor
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5852879A (en) 1995-04-26 1998-12-29 Schumaier; Daniel R. Moisture sensitive item drying appliance
SE506163C2 (sv) 1995-04-27 1997-11-17 Ericsson Telefon Ab L M Anordning vid ett kiselsubstrat med ett urtag för upptagande av ett element jämte förfarande för framställande av en dylik anordning
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US5683517A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
JPH08335558A (ja) 1995-06-08 1996-12-17 Nissin Electric Co Ltd 薄膜気相成長装置
JP3380091B2 (ja) 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
US20020114886A1 (en) 1995-07-06 2002-08-22 Applied Materials, Inc. Method of tisin deposition using a chemical vapor deposition process
NO953217L (no) 1995-08-16 1997-02-17 Aker Eng As Metode og innretning ved rörbunter
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5997588A (en) 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US5801104A (en) 1995-10-24 1998-09-01 Micron Technology, Inc. Uniform dielectric film deposition on textured surfaces
KR100201386B1 (ko) 1995-10-28 1999-06-15 구본준 화학기상증착장비의 반응가스 분사장치
US5736314A (en) 1995-11-16 1998-04-07 Microfab Technologies, Inc. Inline thermo-cycler
US5796074A (en) 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
KR100267418B1 (ko) 1995-12-28 2000-10-16 엔도 마코토 플라스마처리방법및플라스마처리장치
US5679215A (en) 1996-01-02 1997-10-21 Lam Research Corporation Method of in situ cleaning a vacuum plasma processing chamber
US5632919A (en) 1996-01-25 1997-05-27 T.G.M., Inc. Temperature controlled insulation system
SE9600705D0 (sv) 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5837320A (en) 1996-02-27 1998-11-17 The University Of New Mexico Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
US5732744A (en) 1996-03-08 1998-03-31 Control Systems, Inc. Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components
DE19609678C2 (de) 1996-03-12 2003-04-17 Infineon Technologies Ag Speicherzellenanordnung mit streifenförmigen, parallel verlaufenden Gräben und vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
USD380527S (en) 1996-03-19 1997-07-01 Cherle Velez Sink drain shield
US5819434A (en) 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US5920798A (en) 1996-05-28 1999-07-06 Matsushita Battery Industrial Co., Ltd. Method of preparing a semiconductor layer for an optical transforming device
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5827757A (en) 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
US5724748A (en) 1996-07-24 1998-03-10 Brooks; Ray G. Apparatus for packaging contaminant-sensitive articles and resulting package
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
KR0183912B1 (ko) 1996-08-08 1999-05-01 김광호 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
JP3122618B2 (ja) 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US6347636B1 (en) 1996-11-13 2002-02-19 Applied Materials, Inc. Methods and apparatus for gettering fluorine from chamber material surfaces
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US5836483A (en) 1997-02-05 1998-11-17 Aerotech Dental Systems, Inc. Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles
US6367410B1 (en) 1996-12-16 2002-04-09 Applied Materials, Inc. Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6461982B2 (en) 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
JP3752578B2 (ja) 1997-04-21 2006-03-08 株式会社フジキン 流体制御器用加熱装置
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
JP3230051B2 (ja) 1997-05-16 2001-11-19 東京エレクトロン株式会社 乾燥処理方法及びその装置
JPH1144799A (ja) 1997-05-27 1999-02-16 Ushio Inc 光路分割型紫外線照射装置
US6201999B1 (en) 1997-06-09 2001-03-13 Applied Materials, Inc. Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool
US5968275A (en) 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US6576064B2 (en) 1997-07-10 2003-06-10 Sandia Corporation Support apparatus for semiconductor wafer processing
US6024799A (en) 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6083321A (en) 1997-07-11 2000-07-04 Applied Materials, Inc. Fluid delivery system and method
US6312525B1 (en) 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US5975492A (en) 1997-07-14 1999-11-02 Brenes; Arthur Bellows driver slot valve
US6099596A (en) 1997-07-23 2000-08-08 Applied Materials, Inc. Wafer out-of-pocket detection tool
US6013553A (en) 1997-07-24 2000-01-11 Texas Instruments Incorporated Zirconium and/or hafnium oxynitride gate dielectric
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (ko) 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
US7393561B2 (en) 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
JP3317209B2 (ja) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US5908672A (en) 1997-10-15 1999-06-01 Applied Materials, Inc. Method and apparatus for depositing a planarized passivation layer
KR20010031714A (ko) 1997-11-03 2001-04-16 러셀 엔. 페어뱅크스, 쥬니어 수명이 긴 고온 공정 챔버
JP3050193B2 (ja) 1997-11-12 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
EP2099061A3 (en) 1997-11-28 2013-06-12 Mattson Technology, Inc. Systems and methods for low contamination, high throughput handling of workpieces for vacuum processing
US6248168B1 (en) 1997-12-15 2001-06-19 Tokyo Electron Limited Spin coating apparatus including aging unit and solvent replacement unit
KR100249391B1 (ko) 1997-12-30 2000-03-15 김영환 가열장치
US6125789A (en) 1998-01-30 2000-10-03 Applied Materials, Inc. Increasing the sensitivity of an in-situ particle monitor
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
TW437017B (en) 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US6635578B1 (en) * 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6050506A (en) 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6015465A (en) 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
KR100309918B1 (ko) 1998-05-16 2001-12-17 윤종용 광시야각액정표시장치및그제조방법
JP3208376B2 (ja) 1998-05-20 2001-09-10 株式会社半導体プロセス研究所 成膜方法及び半導体装置の製造方法
JPH11343571A (ja) 1998-05-29 1999-12-14 Ngk Insulators Ltd サセプター
JPH11354637A (ja) 1998-06-11 1999-12-24 Oki Electric Ind Co Ltd 配線の接続構造及び配線の接続部の形成方法
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2963443B1 (ja) 1998-06-19 1999-10-18 キヤノン販売株式会社 半導体装置の製造装置
KR20000002833A (ko) 1998-06-23 2000-01-15 윤종용 반도체 웨이퍼 보트
US6232248B1 (en) 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
US6335293B1 (en) * 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
JP2000040728A (ja) 1998-07-22 2000-02-08 Nippon Asm Kk ウェハ搬送機構
US20010001384A1 (en) 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
USD451893S1 (en) 1998-10-15 2001-12-11 Meto International Gmbh Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
JP2000150617A (ja) 1998-11-17 2000-05-30 Tokyo Electron Ltd 搬送装置
JP2000183346A (ja) 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
US6129954A (en) 1998-12-22 2000-10-10 General Electric Company Method for thermally spraying crack-free mullite coatings on ceramic-based substrates
US6137240A (en) 1998-12-31 2000-10-24 Lumion Corporation Universal ballast control circuit
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
TW455912B (en) 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
US6044860A (en) 1999-02-01 2000-04-04 Spx Corporation Adjustable lockout device for knife gate valves
US6374831B1 (en) 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
WO2000047404A1 (en) 1999-02-12 2000-08-17 Gelest, Inc. Chemical vapor deposition of tungsten nitride
IT1308606B1 (it) 1999-02-12 2002-01-08 Lpe Spa Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore
US6250250B1 (en) 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
JP3398936B2 (ja) 1999-04-09 2003-04-21 日本エー・エス・エム株式会社 半導体処理装置
US6326597B1 (en) 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
KR100347379B1 (ko) 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
JP3072989B1 (ja) 1999-05-14 2000-08-07 日本エー・エス・エム株式会社 半導体基板上に薄膜を形成する成膜装置における成膜方法
JP4294791B2 (ja) 1999-05-17 2009-07-15 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
JP3668079B2 (ja) 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
FR2795745B1 (fr) 1999-06-30 2001-08-03 Saint Gobain Vitrage Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu
JP3252835B2 (ja) 1999-07-02 2002-02-04 松下電器産業株式会社 半導体装置およびその製造方法
JP2001023955A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
US6579833B1 (en) 1999-09-01 2003-06-17 The Board Of Trustees Of The University Of Illinois Process for converting a metal carbide to carbon by etching in halogens
JP2001077088A (ja) 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
US6429146B2 (en) 1999-09-02 2002-08-06 Micron Technology, Inc. Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6355153B1 (en) 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6420792B1 (en) 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
JP4209057B2 (ja) 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
KR100369324B1 (ko) 1999-12-02 2003-01-24 한국전자통신연구원 평면형 마이크로 공동구조 제조 방법
FI118804B (fi) 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
JP3810604B2 (ja) 1999-12-21 2006-08-16 Ｓｍｃ株式会社 ゲートバルブ
JP2001176952A (ja) 1999-12-21 2001-06-29 Toshiba Mach Co Ltd ウェーハ位置ずれ検出装置
US6576062B2 (en) 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
US6475930B1 (en) 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
US6436819B1 (en) 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
US6521046B2 (en) 2000-02-04 2003-02-18 Kabushiki Kaisha Kobe Seiko Sho Chamber material made of Al alloy and heater block
US6372583B1 (en) 2000-02-09 2002-04-16 Intel Corporation Process for making semiconductor device with epitaxially grown source and drain
US6407435B1 (en) 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
TW476996B (en) 2000-02-28 2002-02-21 Mitsubishi Material Silicon Semiconductor manufacturing method and semiconductor manufacturing apparatus
AU2001245388A1 (en) 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
JP2001342570A (ja) 2000-03-30 2001-12-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
AU2001247685A1 (en) 2000-03-30 2001-10-15 Tokyo Electron Limited Method of and apparatus for tunable gas injection in a plasma processing system
JP2001345263A (ja) 2000-03-31 2001-12-14 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
DE10021871A1 (de) 2000-05-05 2001-11-15 Infineon Technologies Ag Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
KR100406173B1 (ko) 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
US6461435B1 (en) 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
KR100467366B1 (ko) 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
US6874480B1 (en) 2000-07-03 2005-04-05 Combustion Dynamics Corp. Flow meter
AU2001288225A1 (en) 2000-07-24 2002-02-05 The University Of Maryland College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US6784108B1 (en) 2000-08-31 2004-08-31 Micron Technology, Inc. Gas pulsing for etch profile control
USD449873S1 (en) 2000-09-22 2001-10-30 James Bronson Garbage disposal strainer and splash guard
AU146326S (en) 2000-09-29 2001-12-18 American Standard Int Inc Faucet
US6370796B1 (en) 2000-09-29 2002-04-16 Sony Corporation Heater block cooling system for wafer processing apparatus
US6578893B2 (en) 2000-10-02 2003-06-17 Ajs Automation, Inc. Apparatus and methods for handling semiconductor wafers
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
US7204887B2 (en) 2000-10-16 2007-04-17 Nippon Steel Corporation Wafer holding, wafer support member, wafer boat and heat treatment furnace
FI118014B (fi) 2000-10-23 2007-05-31 Asm Int Menetelmä alumiinioksidiohutkalvojen valmistamiseksi matalissa lämpötiloissa
JP4156788B2 (ja) 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
US6824665B2 (en) 2000-10-25 2004-11-30 Shipley Company, L.L.C. Seed layer deposition
US6688784B1 (en) 2000-10-25 2004-02-10 Advanced Micro Devices, Inc. Parallel plate development with multiple holes in top plate for control of developer flow and pressure
US6445574B1 (en) 2000-10-30 2002-09-03 Motorola, Inc. Electronic device
JP2002158178A (ja) 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US20020064592A1 (en) 2000-11-29 2002-05-30 Madhav Datta Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects
US7208428B2 (en) 2000-12-05 2007-04-24 Tokyo Electron Limited Method and apparatus for treating article to be treated
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US6413321B1 (en) 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
US20020076507A1 (en) 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
JP5068402B2 (ja) 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
US6398184B1 (en) 2000-12-29 2002-06-04 General Signal Corporation Lock device and lock method for knife gate valves
US7172497B2 (en) 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
US7087482B2 (en) 2001-01-19 2006-08-08 Samsung Electronics Co., Ltd. Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
JP3626933B2 (ja) 2001-02-08 2005-03-09 東京エレクトロン株式会社 基板載置台の製造方法
US20020108670A1 (en) 2001-02-12 2002-08-15 Baker John Eric High purity chemical container with external level sensor and removable dip tube
EP1421607A2 (en) 2001-02-12 2004-05-26 ASM America, Inc. Improved process for deposition of semiconductor films
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US6632478B2 (en) 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
JP4487135B2 (ja) 2001-03-05 2010-06-23 東京エレクトロン株式会社 流体制御装置
US6716571B2 (en) 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
US6521295B1 (en) 2001-04-17 2003-02-18 Pilkington North America, Inc. Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby
US6482331B2 (en) 2001-04-18 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing contamination in a plasma process chamber
US6753507B2 (en) 2001-04-27 2004-06-22 Kyocera Corporation Wafer heating apparatus
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6528430B2 (en) 2001-05-01 2003-03-04 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
US6864041B2 (en) 2001-05-02 2005-03-08 International Business Machines Corporation Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
US6627268B1 (en) 2001-05-03 2003-09-30 Novellus Systems, Inc. Sequential ion, UV, and electron induced chemical vapor deposition
JP2002343790A (ja) 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
US6528767B2 (en) 2001-05-22 2003-03-04 Applied Materials, Inc. Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US6472266B1 (en) 2001-06-18 2002-10-29 Taiwan Semiconductor Manufacturing Company Method to reduce bit line capacitance in cub drams
US6391803B1 (en) 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6420279B1 (en) 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US6677254B2 (en) 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
US6638839B2 (en) 2001-07-26 2003-10-28 The University Of Toledo Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
WO2003012843A1 (fr) 2001-07-31 2003-02-13 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procede et appareil de nettoyage et procede et appareil de gravure
US6531412B2 (en) 2001-08-10 2003-03-11 International Business Machines Corporation Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
JP2003059999A (ja) 2001-08-14 2003-02-28 Tokyo Electron Ltd 処理システム
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
JP2003060076A (ja) 2001-08-21 2003-02-28 Nec Corp 半導体装置及びその製造方法
US6521547B1 (en) 2001-09-07 2003-02-18 United Microelectronics Corp. Method of repairing a low dielectric constant material layer
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
US6541370B1 (en) 2001-09-17 2003-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Composite microelectronic dielectric layer with inhibited crack susceptibility
US20030059535A1 (en) 2001-09-25 2003-03-27 Lee Luo Cycling deposition of low temperature films in a cold wall single wafer process chamber
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US6720259B2 (en) 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
KR100431658B1 (ko) 2001-10-05 2004-05-17 삼성전자주식회사 기판 가열 장치 및 이를 갖는 장치
TW563176B (en) 2001-10-26 2003-11-21 Applied Materials Inc Gas delivery apparatus for atomic layer deposition
US6902624B2 (en) 2001-10-29 2005-06-07 Genus, Inc. Massively parallel atomic layer deposition/chemical vapor deposition system
KR100760291B1 (ko) 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
KR20030039247A (ko) 2001-11-12 2003-05-17 주성엔지니어링(주) 서셉터
GB2395493B (en) 2001-11-16 2005-03-09 Trikon Holdings Ltd Forming low K dielectric layers
US6926774B2 (en) 2001-11-21 2005-08-09 Applied Materials, Inc. Piezoelectric vaporizer
USD461233S1 (en) 2001-11-29 2002-08-06 James Michael Whalen Marine deck drain strainer
KR100446619B1 (ko) 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치
JP3891267B2 (ja) 2001-12-25 2007-03-14 キヤノンアネルバ株式会社 シリコン酸化膜作製方法
CN100373559C (zh) 2002-01-15 2008-03-05 东京毅力科创株式会社 形成含硅绝缘膜的cvd方法和装置
CN1643179B (zh) 2002-01-17 2010-05-26 松德沃技术公司 Ald装置和方法
US6760981B2 (en) 2002-01-18 2004-07-13 Speedline Technologies, Inc. Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation
US20030141820A1 (en) 2002-01-30 2003-07-31 Applied Materials, Inc. Method and apparatus for substrate processing
US6899507B2 (en) 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
US6734090B2 (en) 2002-02-20 2004-05-11 International Business Machines Corporation Method of making an edge seal for a semiconductor device
DE10207131B4 (de) 2002-02-20 2007-12-20 Infineon Technologies Ag Verfahren zur Bildung einer Hartmaske in einer Schicht auf einer flachen Scheibe
US20030170583A1 (en) 2002-03-01 2003-09-11 Hitachi Kokusai Electric Inc. Heat treatment apparatus and a method for fabricating substrates
KR100449028B1 (ko) 2002-03-05 2004-09-16 삼성전자주식회사 원자층 증착법을 이용한 박막 형성방법
EP1485513A2 (en) 2002-03-08 2004-12-15 Sundew Technologies, LLC Ald method and apparatus
JP2003264186A (ja) 2002-03-11 2003-09-19 Asm Japan Kk Ｃｖｄ装置処理室のクリーニング方法
US6800134B2 (en) 2002-03-26 2004-10-05 Micron Technology, Inc. Chemical vapor deposition methods and atomic layer deposition methods
US6825134B2 (en) 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
JP4099092B2 (ja) 2002-03-26 2008-06-11 東京エレクトロン株式会社 基板処理装置および基板処理方法、高速ロータリバルブ
JP4128383B2 (ja) 2002-03-27 2008-07-30 東京エレクトロン株式会社 処理装置及び処理方法
WO2003083167A1 (en) 2002-03-28 2003-10-09 President And Fellows Of Harvard College Vapor deposition of silicon dioxide nanolaminates
US6594550B1 (en) 2002-03-29 2003-07-15 Asm America, Inc. Method and system for using a buffer to track robotic movement
JP4106948B2 (ja) 2002-03-29 2008-06-25 東京エレクトロン株式会社 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法
US7988833B2 (en) 2002-04-12 2011-08-02 Schneider Electric USA, Inc. System and method for detecting non-cathode arcing in a plasma generation apparatus
US6710312B2 (en) 2002-04-12 2004-03-23 B H Thermal Corporation Heating jacket assembly with field replaceable thermostat
US6846515B2 (en) 2002-04-17 2005-01-25 Air Products And Chemicals, Inc. Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US8293001B2 (en) 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US6682973B1 (en) 2002-05-16 2004-01-27 Advanced Micro Devices, Inc. Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications
KR100466818B1 (ko) 2002-05-17 2005-01-24 주식회사 하이닉스반도체 반도체 소자의 절연막 형성 방법
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7195693B2 (en) 2002-06-05 2007-03-27 Advanced Thermal Sciences Lateral temperature equalizing system for large area surfaces during processing
US20060014384A1 (en) 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
JP2004014952A (ja) 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7601225B2 (en) 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
US20040018750A1 (en) 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6976822B2 (en) 2002-07-16 2005-12-20 Semitool, Inc. End-effectors and transfer devices for handling microelectronic workpieces
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
KR100447284B1 (ko) 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
TW200427858A (en) 2002-07-19 2004-12-16 Asml Us Inc Atomic layer deposition of high k dielectric films
WO2004010467A2 (en) 2002-07-19 2004-01-29 Aviza Technology, Inc. Low temperature dielectric deposition using aminosilane and ozone
US7297641B2 (en) 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
AU2003268000A1 (en) 2002-07-19 2004-02-09 Mykrolis Corporation Liquid flow controller and precision dispense apparatus and system
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7223323B2 (en) 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
KR100464855B1 (ko) 2002-07-26 2005-01-06 삼성전자주식회사 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
JP4585852B2 (ja) 2002-07-30 2010-11-24 エーエスエム アメリカ インコーポレイテッド 基板処理システム、基板処理方法及び昇華装置
DE10235427A1 (de) 2002-08-02 2004-02-12 Eos Gmbh Electro Optical Systems Vorrichtung und Verfahren zum Herstellen von dreidimensionalen Objekten mittels eines generativen Fertigungsverfahrens
US7153542B2 (en) 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
JP4034145B2 (ja) 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
KR100480610B1 (ko) 2002-08-09 2005-03-31 삼성전자주식회사 실리콘 산화막을 이용한 미세 패턴 형성방법
TW200408323A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high k metal oxides
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
US6649921B1 (en) 2002-08-19 2003-11-18 Fusion Uv Systems, Inc. Apparatus and method providing substantially two-dimensionally uniform irradiation
US20040036129A1 (en) 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US6794284B2 (en) 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
JP2004091848A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 薄膜形成装置の原料ガス供給系および薄膜形成装置
US6884066B2 (en) 2002-09-10 2005-04-26 Fsi International, Inc. Thermal process station with heated lid
US7011299B2 (en) 2002-09-16 2006-03-14 Matheson Tri-Gas, Inc. Liquid vapor delivery system and method of maintaining a constant level of fluid therein
KR100497748B1 (ko) 2002-09-17 2005-06-29 주식회사 무한 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법
JP2004127957A (ja) 2002-09-30 2004-04-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
JP2004134553A (ja) 2002-10-10 2004-04-30 Sony Corp レジストパターンの形成方法及び半導体装置の製造方法
EP1408140A1 (en) 2002-10-11 2004-04-14 STMicroelectronics S.r.l. A high-density plasma process for depositing a layer of Silicon Nitride
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
KR100460841B1 (ko) 2002-10-22 2004-12-09 한국전자통신연구원 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법
KR100520902B1 (ko) 2002-11-20 2005-10-12 주식회사 아이피에스 알루미늄 화합물을 이용한 박막증착방법
KR100496265B1 (ko) 2002-11-29 2005-06-17 한국전자통신연구원 반도체 소자의 박막 형성방법
TW200410337A (en) 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US6858524B2 (en) 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
US7122414B2 (en) 2002-12-03 2006-10-17 Asm International, Inc. Method to fabricate dual metal CMOS devices
US6895158B2 (en) 2002-12-09 2005-05-17 Eastman Kodak Company Waveguide and method of smoothing optical surfaces
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
AU2003301074A1 (en) 2002-12-20 2004-07-22 Brooks Automation, Inc. System and method for on-the-fly eccentricity recognition
USD486891S1 (en) 2003-01-21 2004-02-17 Richard W. Cronce, Jr. Vent pipe protective cover
US7122222B2 (en) 2003-01-23 2006-10-17 Air Products And Chemicals, Inc. Precursors for depositing silicon containing films and processes thereof
US20040144980A1 (en) 2003-01-27 2004-07-29 Ahn Kie Y. Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
US7129165B2 (en) 2003-02-04 2006-10-31 Asm Nutool, Inc. Method and structure to improve reliability of copper interconnects
US7163721B2 (en) 2003-02-04 2007-01-16 Tegal Corporation Method to plasma deposit on organic polymer dielectric film
CN100429753C (zh) 2003-02-06 2008-10-29 东京毅力科创株式会社 等离子体处理方法、半导体基板以及等离子体处理装置
US6876017B2 (en) 2003-02-08 2005-04-05 Intel Corporation Polymer sacrificial light absorbing structure and method
TWI338323B (en) 2003-02-17 2011-03-01 Nikon Corp Stage device, exposure device and manufacguring method of devices
US7091453B2 (en) 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US20040168627A1 (en) 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Atomic layer deposition of oxide film
US6930059B2 (en) 2003-02-27 2005-08-16 Sharp Laboratories Of America, Inc. Method for depositing a nanolaminate film by atomic layer deposition
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7098149B2 (en) 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
JP2004273766A (ja) 2003-03-07 2004-09-30 Watanabe Shoko:Kk 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法
JP4369203B2 (ja) 2003-03-24 2009-11-18 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2004294638A (ja) 2003-03-26 2004-10-21 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト材料およびレジストパターン形成方法
JP4363401B2 (ja) 2003-03-26 2009-11-11 信越半導体株式会社 熱処理用ウェーハ支持具及び熱処理装置
US7208389B1 (en) 2003-03-31 2007-04-24 Novellus Systems, Inc. Method of porogen removal from porous low-k films using UV radiation
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US20040261712A1 (en) 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7033113B2 (en) 2003-05-01 2006-04-25 Shell Oil Company Mid-line connector and method for pipe-in-pipe electrical heating
US6939817B2 (en) 2003-05-08 2005-09-06 Micron Technology, Inc. Removal of carbon from an insulative layer using ozone
EP1623454A2 (en) 2003-05-09 2006-02-08 ASM America, Inc. Reactor surface passivation through chemical deactivation
US7265061B1 (en) 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
US8512798B2 (en) 2003-06-05 2013-08-20 Superpower, Inc. Plasma assisted metalorganic chemical vapor deposition (MOCVD) system
US7598513B2 (en) 2003-06-13 2009-10-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
WO2004114368A2 (en) 2003-06-13 2004-12-29 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University METHOD FOR PREPARING GE1-x-ySnxEy (E=P, As, Sb) SEMICONDUCTORS AND RELATED Si-Ge-Sn-E AND Si-Ge-E ANALOGS
US7589003B2 (en) 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
KR20050001793A (ko) 2003-06-26 2005-01-07 삼성전자주식회사 단원자층 증착 공정의 실시간 분석 방법
US7547363B2 (en) 2003-07-08 2009-06-16 Tosoh Finechem Corporation Solid organometallic compound-filled container and filling method thereof
US7055875B2 (en) 2003-07-11 2006-06-06 Asyst Technologies, Inc. Ultra low contact area end effector
JP4298421B2 (ja) 2003-07-23 2009-07-22 エスペック株式会社 サーマルプレートおよび試験装置
US6909839B2 (en) 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
US7399388B2 (en) 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
US7122481B2 (en) 2003-07-25 2006-10-17 Intel Corporation Sealing porous dielectrics with silane coupling reagents
WO2005017963A2 (en) 2003-08-04 2005-02-24 Asm America, Inc. Surface preparation prior to deposition on germanium
JP2005072405A (ja) 2003-08-27 2005-03-17 Sony Corp 薄膜の形成方法および半導体装置の製造方法
KR20060064067A (ko) 2003-09-03 2006-06-12 동경 엘렉트론 주식회사 가스 처리 장치 및 처리 가스 토출 기구의 방열 방법
US7335277B2 (en) 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
US7235482B2 (en) 2003-09-08 2007-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US7414281B1 (en) 2003-09-09 2008-08-19 Spansion Llc Flash memory with high-K dielectric material between substrate and gate
KR100551138B1 (ko) 2003-09-09 2006-02-10 어댑티브프라즈마테크놀로지 주식회사 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스
US7132201B2 (en) 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
US6911399B2 (en) 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
CN101914760B (zh) 2003-09-19 2012-08-29 株式会社日立国际电气 半导体装置的制造方法及衬底处理装置
JP4524554B2 (ja) 2003-09-25 2010-08-18 信越化学工業株式会社 γ，δ−不飽和カルボン酸及びそのシリルエステルの製造方法、カルボキシル基を有する有機ケイ素化合物及びその製造方法
US7156380B2 (en) 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US20050069651A1 (en) 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
US6875677B1 (en) 2003-09-30 2005-04-05 Sharp Laboratories Of America, Inc. Method to control the interfacial layer for deposition of high dielectric constant films
US7205247B2 (en) 2003-09-30 2007-04-17 Aviza Technology, Inc. Atomic layer deposition of hafnium-based high-k dielectric
US6974781B2 (en) 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
US20070054405A1 (en) 2003-10-23 2007-03-08 Ortho-Clinical Diagnostics, Inc. Patient sample classification based upon low angle light scattering
WO2005042160A2 (en) 2003-10-29 2005-05-12 Asm America, Inc. Reaction system for growing a thin film
US7329947B2 (en) 2003-11-07 2008-02-12 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor substrate
US8313277B2 (en) 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
KR100550641B1 (ko) 2003-11-22 2006-02-09 주식회사 하이닉스반도체 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법
JP4725085B2 (ja) 2003-12-04 2011-07-13 株式会社豊田中央研究所 非晶質炭素、非晶質炭素被膜部材および非晶質炭素膜の成膜方法
US7143897B1 (en) 2003-12-09 2006-12-05 H20 International, Inc. Water filter
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
KR100549273B1 (ko) 2004-01-15 2006-02-03 주식회사 테라세미콘 반도체 제조장치의 기판홀더
JP4513329B2 (ja) 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
US7071051B1 (en) 2004-01-20 2006-07-04 Advanced Micro Devices, Inc. Method for forming a thin, high quality buffer layer in a field effect transistor and related structure
US7354847B2 (en) 2004-01-26 2008-04-08 Taiwan Semiconductor Manufacturing Company Method of trimming technology
KR101118863B1 (ko) 2004-01-30 2012-03-19 도쿄엘렉트론가부시키가이샤 유체 간극을 갖는 기판 홀더 및 그 기판 홀더를 제조하는방법
DE102004005385A1 (de) 2004-02-03 2005-10-20 Infineon Technologies Ag Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten
US20050181535A1 (en) 2004-02-17 2005-08-18 Yun Sun J. Method of fabricating passivation layer for organic devices
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
US7088003B2 (en) 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
US20050214458A1 (en) 2004-03-01 2005-09-29 Meiere Scott H Low zirconium hafnium halide compositions
US20060062910A1 (en) 2004-03-01 2006-03-23 Meiere Scott H Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
JP4879159B2 (ja) 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのｃｖｄプロセス
KR100538096B1 (ko) 2004-03-16 2005-12-21 삼성전자주식회사 원자층 증착 방법을 이용하는 커패시터 형성 방법
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US20050214457A1 (en) 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US20050221618A1 (en) 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
CN1292092C (zh) 2004-04-01 2006-12-27 南昌大学 用于金属有机化学气相沉积设备的双层进气喷头
US7585371B2 (en) 2004-04-08 2009-09-08 Micron Technology, Inc. Substrate susceptors for receiving semiconductor substrates to be deposited upon
US20050227502A1 (en) 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US20060019502A1 (en) 2004-07-23 2006-01-26 Park Beom S Method of controlling the film properties of a CVD-deposited silicon nitride film
WO2005104204A1 (ja) 2004-04-21 2005-11-03 Hitachi Kokusai Electric Inc. 熱処理装置
USD553104S1 (en) 2004-04-21 2007-10-16 Tokyo Electron Limited Absorption board for an electric chuck used in semiconductor manufacture
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7049247B2 (en) 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US20060019033A1 (en) 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
JP2005340251A (ja) 2004-05-24 2005-12-08 Shin Etsu Chem Co Ltd プラズマ処理装置用のシャワープレート及びプラズマ処理装置
US7271093B2 (en) 2004-05-24 2007-09-18 Asm Japan K.K. Low-carbon-doped silicon oxide film and damascene structure using same
US20050266173A1 (en) 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US7580388B2 (en) 2004-06-01 2009-08-25 Lg Electronics Inc. Method and apparatus for providing enhanced messages on common control channel in wireless communication system
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7132360B2 (en) 2004-06-10 2006-11-07 Freescale Semiconductor, Inc. Method for treating a semiconductor surface to form a metal-containing layer
KR100589062B1 (ko) 2004-06-10 2006-06-12 삼성전자주식회사 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법
US7396743B2 (en) 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
JP4534619B2 (ja) 2004-06-21 2010-09-01 株式会社Ｓｕｍｃｏ 半導体シリコン基板用熱処理治具
CN101133475B (zh) 2004-07-09 2012-02-01 皇家飞利浦电子股份有限公司 带有反射器的uvc/vuv电介质阻挡放电灯
US7094442B2 (en) 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
KR100578819B1 (ko) 2004-07-15 2006-05-11 삼성전자주식회사 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
ATE378443T1 (de) 2004-07-30 2007-11-15 Lpe Spa Epitaxiereaktor mit suszeptorgesteuerter positionierung
US7470633B2 (en) 2004-08-09 2008-12-30 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
KR101071136B1 (ko) 2004-08-27 2011-10-10 엘지디스플레이 주식회사 평판표시장치의 제조를 위한 기판의 박막처리장치
ITMI20041677A1 (it) 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
DE102004042431B4 (de) 2004-08-31 2008-07-03 Schott Ag Verfahren und Vorrichtung zur Plasmabeschichtung von Werkstücken mit spektraler Auswertung der Prozessparameter und Verwendung der Vorrichtung
US8158488B2 (en) 2004-08-31 2012-04-17 Micron Technology, Inc. Method of increasing deposition rate of silicon dioxide on a catalyst
US7910288B2 (en) 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
US20060137609A1 (en) 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus
US20060060930A1 (en) 2004-09-17 2006-03-23 Metz Matthew V Atomic layer deposition of high dielectric constant gate dielectrics
DE102005045081B4 (de) 2004-09-29 2011-07-07 Covalent Materials Corp. Suszeptor
US7241475B2 (en) 2004-09-30 2007-07-10 The Aerospace Corporation Method for producing carbon surface films by plasma exposure of a carbide compound
US6874247B1 (en) 2004-10-12 2005-04-05 Tsang-Hung Hsu Toothbrush dryer
US20060257563A1 (en) 2004-10-13 2006-11-16 Seok-Joo Doh Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique
US7780440B2 (en) 2004-10-19 2010-08-24 Canon Anelva Corporation Substrate supporting/transferring tray
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7163900B2 (en) 2004-11-01 2007-01-16 Infineon Technologies Ag Using polydentate ligands for sealing pores in low-k dielectrics
JP2006135161A (ja) 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
US7678682B2 (en) 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
TWI538013B (zh) 2004-11-18 2016-06-11 尼康股份有限公司 A position measuring method, a position control method, a measuring method, a loading method, an exposure method and an exposure apparatus, and a device manufacturing method
KR100773755B1 (ko) 2004-11-18 2007-11-09 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
CN100573803C (zh) 2004-11-24 2009-12-23 Oc欧瑞康巴尔斯公司 用于非常大面积基片的真空处理室
US20060113806A1 (en) 2004-11-29 2006-06-01 Asm Japan K.K. Wafer transfer mechanism
US20060113675A1 (en) 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7290813B2 (en) 2004-12-16 2007-11-06 Asyst Technologies, Inc. Active edge grip rest pad
US7396732B2 (en) 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
JP4560681B2 (ja) 2004-12-24 2010-10-13 ミネベア株式会社 多灯式放電灯点灯装置
JP2006186271A (ja) 2004-12-28 2006-07-13 Sharp Corp 気相成長装置および成膜済基板の製造方法
WO2006073871A1 (en) 2004-12-30 2006-07-13 Applied Materials, Inc. Line edge roughness reduction compatible with trimming
US7846499B2 (en) 2004-12-30 2010-12-07 Asm International N.V. Method of pulsing vapor precursors in an ALD reactor
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7598516B2 (en) 2005-01-07 2009-10-06 International Business Machines Corporation Self-aligned process for nanotube/nanowire FETs
JP4934595B2 (ja) 2005-01-18 2012-05-16 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
KR100725037B1 (ko) * 2005-01-21 2007-06-07 세메스 주식회사 반도체 플라즈마 처리 장치 및 방법
KR100640550B1 (ko) 2005-01-26 2006-10-31 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US7135402B2 (en) 2005-02-01 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing pores of low-k dielectrics using CxHy
US7298009B2 (en) 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
EP1851794A1 (en) 2005-02-22 2007-11-07 ASM America, Inc. Plasma pre-treating surfaces for atomic layer deposition
JP4764028B2 (ja) 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
US7629267B2 (en) 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US6972478B1 (en) 2005-03-07 2005-12-06 Advanced Micro Devices, Inc. Integrated circuit and method for its manufacture
US7314835B2 (en) 2005-03-21 2008-01-01 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7422636B2 (en) 2005-03-25 2008-09-09 Tokyo Electron Limited Plasma enhanced atomic layer deposition system having reduced contamination
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
KR20080003387A (ko) 2005-04-07 2008-01-07 에비자 테크놀로지, 인크. 다중층, 다중성분 높은-ｋ 막들 및 이들의 증착 방법
US7479198B2 (en) 2005-04-07 2009-01-20 Timothy D'Annunzio Methods for forming nanofiber adhesive structures
KR100640640B1 (ko) 2005-04-19 2006-10-31 삼성전자주식회사 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법
JP4694878B2 (ja) 2005-04-20 2011-06-08 Ｏｋｉセミコンダクタ株式会社 半導体製造装置および半導体装置の製造方法
US7160819B2 (en) 2005-04-25 2007-01-09 Sharp Laboratories Of America, Inc. Method to perform selective atomic layer deposition of zinc oxide
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US20060251827A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US20060260545A1 (en) 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US20070155138A1 (en) 2005-05-24 2007-07-05 Pierre Tomasini Apparatus and method for depositing silicon germanium films
US8129290B2 (en) * 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US7732342B2 (en) 2005-05-26 2010-06-08 Applied Materials, Inc. Method to increase the compressive stress of PECVD silicon nitride films
US20090029564A1 (en) 2005-05-31 2009-01-29 Tokyo Electron Limited Plasma treatment apparatus and plasma treatment method
US8435905B2 (en) 2005-06-13 2013-05-07 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device, and substrate processing apparatus
US20060278524A1 (en) 2005-06-14 2006-12-14 Stowell Michael W System and method for modulating power signals to control sputtering
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
JP4753173B2 (ja) 2005-06-17 2011-08-24 株式会社フジキン 流体制御装置
JP2007005582A (ja) 2005-06-24 2007-01-11 Asm Japan Kk 基板搬送装置及びそれを搭載した半導体基板製造装置
US7575990B2 (en) 2005-07-01 2009-08-18 Macronix International Co., Ltd. Method of forming self-aligned contacts and local interconnects
KR20080028963A (ko) 2005-07-08 2008-04-02 에비자 테크놀로지, 인크. 실리콘 함유 필름의 증착 방법
US20070010072A1 (en) 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
CN101222983B (zh) 2005-07-09 2012-09-05 康邦权 用于在常压等离子体中疏水和超疏水处理的表面涂覆方法
US7762755B2 (en) 2005-07-11 2010-07-27 Brooks Automation, Inc. Equipment storage for substrate processing apparatus
US7925378B2 (en) 2005-07-11 2011-04-12 Brooks Automation, Inc. Process apparatus with on-the-fly workpiece centering
US7314838B2 (en) 2005-07-21 2008-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a high density dielectric film by chemical vapor deposition
JP2007035747A (ja) 2005-07-25 2007-02-08 Sumitomo Electric Ind Ltd ウェハ保持体およびそれを搭載したウェハプローバ
JP2007035899A (ja) 2005-07-27 2007-02-08 Sumitomo Electric Ind Ltd ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ
TWI313486B (en) 2005-07-28 2009-08-11 Nuflare Technology Inc Position measurement apparatus and method and writing apparatus and method
US20070028842A1 (en) 2005-08-02 2007-02-08 Makoto Inagawa Vacuum chamber bottom
US20090045829A1 (en) 2005-08-04 2009-02-19 Sumitomo Electric Industries, Ltd. Wafer holder for wafer prober and wafer prober equipped with same
US20070037412A1 (en) 2005-08-05 2007-02-15 Tokyo Electron Limited In-situ atomic layer deposition
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7718225B2 (en) 2005-08-17 2010-05-18 Applied Materials, Inc. Method to control semiconductor film deposition characteristics
USD557226S1 (en) 2005-08-25 2007-12-11 Hitachi High-Technologies Corporation Electrode cover for a plasma processing apparatus
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7393736B2 (en) 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
JP4815600B2 (ja) 2005-09-06 2011-11-16 株式会社テラセミコン 多結晶シリコン薄膜製造方法及びその製造装置
JP2007088113A (ja) 2005-09-21 2007-04-05 Sony Corp 半導体装置の製造方法
US20070065578A1 (en) 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
US7691204B2 (en) 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
US7785658B2 (en) 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
US7294581B2 (en) 2005-10-17 2007-11-13 Applied Materials, Inc. Method for fabricating silicon nitride spacer structures
US7691205B2 (en) 2005-10-18 2010-04-06 Asm Japan K.K. Substrate-supporting device
US7906910B2 (en) 2005-10-27 2011-03-15 Luxim Corporation Plasma lamp with conductive material positioned relative to RF feed
US7638951B2 (en) 2005-10-27 2009-12-29 Luxim Corporation Plasma lamp with stable feedback amplification and method therefor
US7994721B2 (en) 2005-10-27 2011-08-09 Luxim Corporation Plasma lamp and methods using a waveguide body and protruding bulb
DE102005051994B4 (de) 2005-10-31 2011-12-01 Globalfoundries Inc. Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius
JP4940635B2 (ja) 2005-11-14 2012-05-30 東京エレクトロン株式会社 加熱装置、熱処理装置及び記憶媒体
KR100660890B1 (ko) 2005-11-16 2006-12-26 삼성전자주식회사 Ａｌｄ를 이용한 이산화실리콘막 형성 방법
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
US20070116873A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7629277B2 (en) 2005-11-23 2009-12-08 Honeywell International Inc. Frag shield
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
JP4666496B2 (ja) 2005-12-07 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
JP4629574B2 (ja) 2005-12-27 2011-02-09 日本発條株式会社 基板支持装置と、その製造方法
KR101296911B1 (ko) 2005-12-28 2013-08-14 엘지디스플레이 주식회사 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법
TWI284390B (en) 2006-01-10 2007-07-21 Ind Tech Res Inst Manufacturing method of charge store device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
US20080254220A1 (en) 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
US20070173071A1 (en) 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
US8673413B2 (en) 2006-01-27 2014-03-18 Tosoh Finechem Corporation Method for packing solid organometallic compound and packed container
JP4854317B2 (ja) 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
KR100785163B1 (ko) * 2006-02-03 2007-12-11 위순임 다중 원격 플라즈마 발생기를 구비하는 기판 처리 시스템
US8057603B2 (en) 2006-02-13 2011-11-15 Tokyo Electron Limited Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7794546B2 (en) 2006-03-08 2010-09-14 Tokyo Electron Limited Sealing device and method for a processing system
US7740705B2 (en) 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system
US7460003B2 (en) 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7494882B2 (en) 2006-03-10 2009-02-24 Texas Instruments Incorporated Manufacturing a semiconductive device using a controlled atomic layer removal process
KR20070093493A (ko) 2006-03-14 2007-09-19 엘지이노텍 주식회사 서셉터 및 반도체 제조장치
US8268078B2 (en) 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US20070218200A1 (en) 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system
US7566891B2 (en) 2006-03-17 2009-07-28 Applied Materials, Inc. Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors
US7410915B2 (en) 2006-03-23 2008-08-12 Asm Japan K.K. Method of forming carbon polymer film using plasma CVD
US20070234955A1 (en) 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
JP2007266464A (ja) 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US8951478B2 (en) 2006-03-30 2015-02-10 Applied Materials, Inc. Ampoule with a thermally conductive coating
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US20070287301A1 (en) 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US20070237697A1 (en) 2006-03-31 2007-10-11 Tokyo Electron Limited Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
US7396491B2 (en) 2006-04-06 2008-07-08 Osram Sylvania Inc. UV-emitting phosphor and lamp containing same
US7902074B2 (en) 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
US20070248767A1 (en) 2006-04-19 2007-10-25 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7410852B2 (en) 2006-04-21 2008-08-12 International Business Machines Corporation Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
FR2900276B1 (fr) 2006-04-25 2008-09-12 St Microelectronics Sa Depot peald d'un materiau a base de silicium
US7537804B2 (en) 2006-04-28 2009-05-26 Micron Technology, Inc. ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US8231799B2 (en) 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7875312B2 (en) 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US20070277735A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
WO2007140813A1 (en) 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7554103B2 (en) 2006-06-26 2009-06-30 Applied Materials, Inc. Increased tool utilization/reduction in MWBC for UV curing chamber
US20080153311A1 (en) 2006-06-28 2008-06-26 Deenesh Padhi Method for depositing an amorphous carbon film with improved density and step coverage
US7867578B2 (en) 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
WO2008004278A1 (fr) 2006-07-04 2008-01-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Procédé et dispositif de concentration / dilution de gaz spécifique
JP4193883B2 (ja) 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
KR100799735B1 (ko) 2006-07-10 2008-02-01 삼성전자주식회사 금속 산화물 형성 방법 및 이를 수행하기 위한 장치
KR100791334B1 (ko) 2006-07-26 2008-01-07 삼성전자주식회사 원자층 증착법을 이용한 금속 산화막 형성 방법
FR2904328B1 (fr) 2006-07-27 2008-10-24 St Microelectronics Sa Depot par adsorption sous un champ electrique
US7749879B2 (en) 2006-08-03 2010-07-06 Micron Technology, Inc. ALD of silicon films on germanium
GB0615722D0 (en) 2006-08-08 2006-09-20 Boc Group Plc Apparatus for conveying a waste stream
US8080282B2 (en) 2006-08-08 2011-12-20 Asm Japan K.K. Method for forming silicon carbide film containing oxygen
US7514375B1 (en) 2006-08-08 2009-04-07 Novellus Systems, Inc. Pulsed bias having high pulse frequency for filling gaps with dielectric material
TW200814131A (en) 2006-08-11 2008-03-16 Schott Ag External electrode fluorescent lamp with optimized operating efficiency
US20110027999A1 (en) 2006-08-16 2011-02-03 Freescale Semiconductor, Inc. Etch method in the manufacture of an integrated circuit
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
KR100753020B1 (ko) 2006-08-30 2007-08-30 한국화학연구원 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법
US7690881B2 (en) 2006-08-30 2010-04-06 Asm Japan K.K. Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus
JP4943780B2 (ja) 2006-08-31 2012-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US20080057659A1 (en) 2006-08-31 2008-03-06 Micron Technology, Inc. Hafnium aluminium oxynitride high-K dielectric and metal gates
JP4762835B2 (ja) 2006-09-07 2011-08-31 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体
USD613829S1 (en) 2006-09-13 2010-04-13 Hayward Industries, Inc. Circular suction outlet assembly cover
US7789965B2 (en) 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US7976898B2 (en) 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
JP2008074963A (ja) 2006-09-21 2008-04-03 Fujifilm Corp 組成物、膜、およびその製造方法
US7718553B2 (en) 2006-09-21 2010-05-18 Asm Japan K.K. Method for forming insulation film having high density
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US8137048B2 (en) 2006-09-27 2012-03-20 Vserv Technologies Wafer processing system with dual wafer robots capable of asynchronous motion
US7476291B2 (en) 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
TWI462179B (zh) 2006-09-28 2014-11-21 Tokyo Electron Ltd 用以形成氧化矽膜之成膜方法與裝置
US7767262B2 (en) 2006-09-29 2010-08-03 Tokyo Electron Limited Nitrogen profile engineering in nitrided high dielectric constant films
KR101480971B1 (ko) 2006-10-10 2015-01-09 에이에스엠 아메리카, 인코포레이티드 전구체 전달 시스템
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
USD593969S1 (en) 2006-10-10 2009-06-09 Tokyo Electron Limited Processing chamber for manufacturing semiconductors
CN100451163C (zh) 2006-10-18 2009-01-14 中微半导体设备(上海)有限公司 用于半导体工艺件处理反应器的气体分布装置及其反应器
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US7727864B2 (en) 2006-11-01 2010-06-01 Asm America, Inc. Controlled composition using plasma-enhanced atomic layer deposition
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7955516B2 (en) 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
JP2008117903A (ja) 2006-11-02 2008-05-22 Toshiba Corp 半導体装置の製造方法
WO2008056295A1 (en) 2006-11-09 2008-05-15 Nxp B.V. A semiconductor device and a method of manufacturing thereof
US7749574B2 (en) 2006-11-14 2010-07-06 Applied Materials, Inc. Low temperature ALD SiO2
US7776395B2 (en) 2006-11-14 2010-08-17 Applied Materials, Inc. Method of depositing catalyst assisted silicates of high-k materials
US7671134B2 (en) 2006-11-15 2010-03-02 Brady Worldwide, Inc. Compositions with improved adhesion to low surface energy substrates
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US7807575B2 (en) 2006-11-29 2010-10-05 Micron Technology, Inc. Methods to reduce the critical dimension of semiconductor devices
EP2089897A2 (en) 2006-12-07 2009-08-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film
US7960236B2 (en) 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
DE102007003416A1 (de) 2007-01-16 2008-07-17 Hansgrohe Ag Duschvorrichtung
DE102007002962B3 (de) 2007-01-19 2008-07-31 Qimonda Ag Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators
WO2008143716A2 (en) 2007-01-22 2008-11-27 Innovalight, Inc. In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
JP5109376B2 (ja) 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
US7550090B2 (en) 2007-01-23 2009-06-23 Applied Materials, Inc. Oxygen plasma clean to remove carbon species deposited on a glass dome surface
US7833353B2 (en) 2007-01-24 2010-11-16 Asm Japan K.K. Liquid material vaporization apparatus for semiconductor processing apparatus
US20080173239A1 (en) 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
JP2008192643A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
JP4805862B2 (ja) 2007-02-21 2011-11-02 富士通セミコンダクター株式会社 基板処理装置、基板処理方法、及び半導体装置の製造方法
JP2008202107A (ja) 2007-02-21 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置
US20080207007A1 (en) 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
DE102007009914B4 (de) 2007-02-28 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben
US20080216077A1 (en) 2007-03-02 2008-09-04 Applied Materials, Inc. Software sequencer for integrated substrate processing system
US7833913B2 (en) 2007-03-20 2010-11-16 Tokyo Electron Limited Method of forming crystallographically stabilized doped hafnium zirconium based films
US7435987B1 (en) 2007-03-27 2008-10-14 Intel Corporation Forming a type I heterostructure in a group IV semiconductor
US7651961B2 (en) 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US20080241384A1 (en) 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
KR100829759B1 (ko) 2007-04-04 2008-05-15 삼성에스디아이 주식회사 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자
US8357214B2 (en) 2007-04-26 2013-01-22 Trulite, Inc. Apparatus, system, and method for generating a gas from solid reactant pouches
US7575968B2 (en) 2007-04-30 2009-08-18 Freescale Semiconductor, Inc. Inverse slope isolation and dual surface orientation integration
US7713874B2 (en) 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
JP5103056B2 (ja) 2007-05-15 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US20080299326A1 (en) 2007-05-30 2008-12-04 Asm Japan K.K. Plasma cvd apparatus having non-metal susceptor
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
US20080302303A1 (en) 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8142606B2 (en) 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
KR101073858B1 (ko) 2007-06-08 2011-10-14 도쿄엘렉트론가부시키가이샤 패터닝 방법
JP4427562B2 (ja) 2007-06-11 2010-03-10 株式会社東芝 パターン形成方法
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
CN100590804C (zh) 2007-06-22 2010-02-17 中芯国际集成电路制造(上海)有限公司 原子层沉积方法以及形成的半导体器件
US20090000550A1 (en) 2007-06-29 2009-01-01 Applied Materials, Inc. Manifold assembly
US20090033907A1 (en) 2007-07-05 2009-02-05 Nikon Corporation Devices and methods for decreasing residual chucking forces
US7501292B2 (en) 2007-07-19 2009-03-10 Asm Japan K.K. Method for managing UV irradiation for curing semiconductor substrate
JP4900110B2 (ja) 2007-07-20 2012-03-21 東京エレクトロン株式会社 薬液気化タンク及び薬液処理システム
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US7720560B2 (en) 2007-07-26 2010-05-18 International Business Machines Corporation Semiconductor manufacturing process monitoring
US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
US20090041952A1 (en) 2007-08-10 2009-02-12 Asm Genitech Korea Ltd. Method of depositing silicon oxide films
WO2009023169A1 (en) 2007-08-10 2009-02-19 Nano Terra Inc. Structured smudge-resistant coatings and methods of making and using the same
US7745352B2 (en) 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
US8334015B2 (en) 2007-09-05 2012-12-18 Intermolecular, Inc. Vapor based combinatorial processing
WO2009031886A2 (en) 2007-09-07 2009-03-12 Fujifilm Manufacturing Europe B.V. Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
CA122619S (en) 2007-10-09 2010-01-27 Silvano Breda Shower strainer
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP4986784B2 (ja) 2007-09-18 2012-07-25 東京エレクトロン株式会社 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体
US20090085156A1 (en) 2007-09-28 2009-04-02 Gilbert Dewey Metal surface treatments for uniformly growing dielectric layers
JP5236983B2 (ja) 2007-09-28 2013-07-17 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体
US8041450B2 (en) 2007-10-04 2011-10-18 Asm Japan K.K. Position sensor system for substrate transfer robot
US20090090382A1 (en) 2007-10-05 2009-04-09 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
KR101399117B1 (ko) * 2007-10-19 2014-05-28 주성엔지니어링(주) 원격 플라즈마를 이용한 기판 식각장치 및 이를 이용한기판 식각방법
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7615831B2 (en) 2007-10-26 2009-11-10 International Business Machines Corporation Structure and method for fabricating self-aligned metal contacts
CA123273S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
US8272516B2 (en) 2007-11-19 2012-09-25 Caterpillar Inc. Fluid filter system
CA123272S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
US8021723B2 (en) 2007-11-27 2011-09-20 Asm Japan K.K. Method of plasma treatment using amplitude-modulated RF power
JP5314700B2 (ja) 2007-11-28 2013-10-16 コーニンクレッカ フィリップス エヌ ヴェ 誘電バリア放電ランプ
US8060252B2 (en) 2007-11-30 2011-11-15 Novellus Systems, Inc. High throughput method of in transit wafer position correction in system using multiple robots
KR20090056475A (ko) * 2007-11-30 2009-06-03 삼성전자주식회사 플라즈마 처리장치
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US20090139657A1 (en) 2007-12-04 2009-06-04 Applied Materials, Inc. Etch system
US8440569B2 (en) 2007-12-07 2013-05-14 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US8003174B2 (en) 2007-12-13 2011-08-23 Asm Japan K.K. Method for forming dielectric film using siloxane-silazane mixture
KR100956247B1 (ko) 2007-12-13 2010-05-06 삼성엘이디 주식회사 금속유기 화학기상 증착장치
JP5307029B2 (ja) 2007-12-17 2013-10-02 株式会社オーク製作所 放電ランプ
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
KR101542636B1 (ko) 2007-12-19 2015-08-06 램 리써치 코포레이션 나노다공성 로우-k 유전체 재료 처리 방법
KR20090068179A (ko) 2007-12-21 2009-06-25 에이에스엠 인터내셔널 엔.브이. 실리콘 이산화물을 포함하는 박막의 제조 방법
US7678715B2 (en) 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
KR101013413B1 (ko) 2008-01-07 2011-02-14 한국과학기술연구원 플라즈마 표면 처리를 이용한 투명 기체 차단 필름의 제조방법 및 이로부터 제조된 투명 기체 차단 필름
US7935940B1 (en) 2008-01-08 2011-05-03 Novellus Systems, Inc. Measuring in-situ UV intensity in UV cure tool
US20090203197A1 (en) 2008-02-08 2009-08-13 Hiroji Hanawa Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
GB0802486D0 (en) 2008-02-12 2008-03-19 Gilbert Patrick C Warm water economy device
US20090214777A1 (en) 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
KR100968132B1 (ko) 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
USD585968S1 (en) 2008-03-06 2009-02-03 West Coast Washers, Inc. Pipe flashing
EP2099067A1 (en) 2008-03-07 2009-09-09 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Process for adjusting the friction coefficient between surfaces of two solid objects
US8252114B2 (en) 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
US20090246399A1 (en) 2008-03-28 2009-10-01 Asm Japan K.K. Method for activating reactive oxygen species for cleaning carbon-based film deposition
US7816278B2 (en) 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US7963736B2 (en) 2008-04-03 2011-06-21 Asm Japan K.K. Wafer processing apparatus with wafer alignment device
US20090250955A1 (en) 2008-04-07 2009-10-08 Applied Materials, Inc. Wafer transfer blade
CN102007597B (zh) 2008-04-17 2014-02-19 应用材料公司 低温薄膜晶体管工艺、装置特性和装置稳定性改进
US20090269506A1 (en) 2008-04-24 2009-10-29 Seiji Okura Method and apparatus for cleaning of a CVD reactor
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
US8076237B2 (en) 2008-05-09 2011-12-13 Asm America, Inc. Method and apparatus for 3D interconnect
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
US20090286402A1 (en) 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
US8333842B2 (en) 2008-05-15 2012-12-18 Applied Materials, Inc. Apparatus for etching semiconductor wafers
US8298628B2 (en) 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
WO2009146744A1 (de) 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
JP2009295932A (ja) 2008-06-09 2009-12-17 Canon Inc 露光装置及びデバイス製造方法
US8726837B2 (en) 2008-06-23 2014-05-20 Applied Materials, Inc. Semiconductor process chamber vision and monitoring system
US8702867B2 (en) 2008-07-08 2014-04-22 Jusung Engineering Co., Ltd. Gas distribution plate and substrate treating apparatus including the same
US8058138B2 (en) 2008-07-17 2011-11-15 Micron Technology, Inc. Gap processing
US20100025796A1 (en) 2008-08-04 2010-02-04 Amir Massoud Dabiran Microchannel plate photocathode
KR20100015213A (ko) 2008-08-04 2010-02-12 삼성전기주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
US20110220874A1 (en) 2008-08-08 2011-09-15 Tobias Hanrath Inorganic Bulk Multijunction Materials and Processes for Preparing the Same
US8129555B2 (en) 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
KR101017170B1 (ko) 2008-08-13 2011-02-25 주식회사 동부하이텍 백 메탈 공정챔버
US8263502B2 (en) 2008-08-13 2012-09-11 Synos Technology, Inc. Forming substrate structure by filling recesses with deposition material
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20100055442A1 (en) 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
JP2010087467A (ja) 2008-09-04 2010-04-15 Tokyo Electron Ltd 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
USD643055S1 (en) 2008-09-11 2011-08-09 Asm Japan K.K. Heater block for use in a semiconductor processing tool
US9711373B2 (en) 2008-09-22 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a gate dielectric for high-k metal gate devices
DE102008049353A1 (de) 2008-09-29 2010-04-08 Vat Holding Ag Vakuumventil
US20100081293A1 (en) 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
TWD135511S1 (zh) 2008-10-03 2010-06-21 日本碍子股份有限公司 靜電夾頭
CN102177571A (zh) 2008-10-07 2011-09-07 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
KR101627297B1 (ko) 2008-10-13 2016-06-03 한국에이에스엠지니텍 주식회사 플라즈마 처리부 및 이를 포함하는 증착 장치 및 증착 방법
US8105465B2 (en) 2008-10-14 2012-01-31 Applied Materials, Inc. Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD)
WO2010044978A1 (en) 2008-10-15 2010-04-22 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Hybrid group iv/iii-v semiconductor structures
JP2010097834A (ja) 2008-10-17 2010-04-30 Ushio Inc バックライトユニット
KR20110084275A (ko) 2008-10-27 2011-07-21 어플라이드 머티어리얼스, 인코포레이티드 삼원 화합물의 기상 증착 방법
JP5062143B2 (ja) 2008-11-10 2012-10-31 東京エレクトロン株式会社 成膜装置
US8647722B2 (en) 2008-11-14 2014-02-11 Asm Japan K.K. Method of forming insulation film using plasma treatment cycles
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
JP2010153769A (ja) 2008-11-19 2010-07-08 Tokyo Electron Ltd 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20100130017A1 (en) 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
WO2010065473A2 (en) 2008-12-01 2010-06-10 Applied Materials, Inc. Gas distribution blocker apparatus
US8138676B2 (en) 2008-12-01 2012-03-20 Mills Robert L Methods and systems for dimmable fluorescent lighting using multiple frequencies
EP2194574B1 (en) 2008-12-02 2018-11-07 IMEC vzw Method for producing interconnect structures for integrated circuits
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
KR20100075070A (ko) 2008-12-24 2010-07-02 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US8216380B2 (en) 2009-01-08 2012-07-10 Asm America, Inc. Gap maintenance for opening to process chamber
US20100176513A1 (en) 2009-01-09 2010-07-15 International Business Machines Corporation Structure and method of forming metal interconnect structures in ultra low-k dielectrics
WO2010081003A2 (en) 2009-01-11 2010-07-15 Applied Materials, Inc. Systems, apparatus and methods for moving substrates
US8151814B2 (en) 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
US7919416B2 (en) 2009-01-21 2011-04-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8142862B2 (en) 2009-01-21 2012-03-27 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US7972980B2 (en) 2009-01-21 2011-07-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8680650B2 (en) 2009-02-03 2014-03-25 Micron Technology, Inc. Capacitor structures having improved area efficiency
US8307472B1 (en) 2009-02-04 2012-11-13 Thomas Jason Saxon Light emitting diode system
CN102308380B (zh) 2009-02-04 2014-06-04 马特森技术有限公司 用于径向调整衬底的表面上的温度轮廓的静电夹具系统及方法
US8287648B2 (en) 2009-02-09 2012-10-16 Asm America, Inc. Method and apparatus for minimizing contamination in semiconductor processing chamber
EP2397574A4 (en) 2009-02-16 2013-08-14 Mitsubishi Plastics Inc METHOD FOR PRODUCING A MULTILAYER GAS-REINFORCED FILM
JP2010205967A (ja) 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP5221421B2 (ja) 2009-03-10 2013-06-26 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
US8703624B2 (en) 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
KR20110137775A (ko) 2009-03-26 2011-12-23 파나소닉 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
JP5292160B2 (ja) 2009-03-31 2013-09-18 東京エレクトロン株式会社 ガス流路構造体及び基板処理装置
US8197915B2 (en) 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
US8284601B2 (en) 2009-04-01 2012-10-09 Samsung Electronics Co., Ltd. Semiconductor memory device comprising three-dimensional memory cell array
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
JP5338443B2 (ja) 2009-04-14 2013-11-13 信越半導体株式会社 Ｓｏｉウェーハの製造方法
SG174993A1 (en) 2009-04-21 2011-11-28 Applied Materials Inc Cvd apparatus for improved film thickness non-uniformity and particle performance
US8071452B2 (en) 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
JP5136574B2 (ja) 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7842622B1 (en) 2009-05-15 2010-11-30 Asm Japan K.K. Method of forming highly conformal amorphous carbon layer
US8004198B2 (en) 2009-05-28 2011-08-23 Osram Sylvania Inc. Resetting an electronic ballast in the event of fault
US20100317198A1 (en) 2009-06-12 2010-12-16 Novellus Systems, Inc. Remote plasma processing of interface surfaces
USD652896S1 (en) 2009-06-17 2012-01-24 Neoperl Gmbh Faucet stream former
US7825040B1 (en) 2009-06-22 2010-11-02 Asm Japan K.K. Method for depositing flowable material using alkoxysilane or aminosilane precursor
US20110006406A1 (en) 2009-07-08 2011-01-13 Imec Fabrication of porogen residues free and mechanically robust low-k materials
KR101110080B1 (ko) 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
JP2011023718A (ja) 2009-07-15 2011-02-03 Asm Japan Kk ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
US20120107607A1 (en) 2009-07-17 2012-05-03 Mitsui Chemicals, Inc. Multilayered material and method of producing the same
US8071451B2 (en) 2009-07-29 2011-12-06 Axcelis Technologies, Inc. Method of doping semiconductors
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
KR101031226B1 (ko) 2009-08-21 2011-04-29 에이피시스템 주식회사 급속열처리 장치의 히터블록
CN102414801A (zh) 2009-08-27 2012-04-11 应用材料公司 在原位腔室清洁后的处理腔室去污方法
USD634719S1 (en) 2009-08-27 2011-03-22 Ebara Corporation Elastic membrane for semiconductor wafer polishing apparatus
WO2011026064A1 (en) 2009-08-31 2011-03-03 The Penn State Research Foundation Improved plasma enhanced atomic layer deposition process
JP5457109B2 (ja) 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
KR200478069Y1 (ko) 2009-09-10 2015-08-24 램 리써치 코포레이션 플라즈마 처리 장치의 교체가능한 상부 체임버 부품
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
EP2306497B1 (en) 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound
US8173554B2 (en) 2009-10-14 2012-05-08 Asm Japan K.K. Method of depositing dielectric film having Si-N bonds by modified peald method
US8415259B2 (en) 2009-10-14 2013-04-09 Asm Japan K.K. Method of depositing dielectric film by modified PEALD method
US8465791B2 (en) 2009-10-16 2013-06-18 Msp Corporation Method for counting particles in a gas
US20110097901A1 (en) 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
JP5451324B2 (ja) 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8854734B2 (en) 2009-11-12 2014-10-07 Vela Technologies, Inc. Integrating optical system and methods
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
JP5753351B2 (ja) 2009-11-19 2015-07-22 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 電子デバイスを形成する方法
KR20110055912A (ko) 2009-11-20 2011-05-26 주식회사 하이닉스반도체 반도체 소자의 콘택홀 형성방법
AU329418S (en) 2009-11-23 2010-01-29 Pusher tool
US8328494B2 (en) 2009-12-15 2012-12-11 Varian Semiconductor Equipment Associates, Inc. In vacuum optical wafer heater for cryogenic processing
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20110159202A1 (en) 2009-12-29 2011-06-30 Asm Japan K.K. Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD
USD653734S1 (en) 2010-01-08 2012-02-07 Bulk Tank, Inc. Screened gasket
US20110183269A1 (en) 2010-01-25 2011-07-28 Hongbin Zhu Methods Of Forming Patterns, And Methods For Trimming Photoresist Features
US8480942B2 (en) 2010-01-27 2013-07-09 The Board Of Trustees Of The University Of Illinois Method of forming a patterned layer of a material on a substrate
JP5258981B2 (ja) 2010-02-05 2013-08-07 東京エレクトロン株式会社 基板保持具及び基板搬送装置及び基板処理装置
KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
JP5812606B2 (ja) * 2010-02-26 2015-11-17 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US8241991B2 (en) 2010-03-05 2012-08-14 Asm Japan K.K. Method for forming interconnect structure having airgap
FR2957716B1 (fr) 2010-03-18 2012-10-05 Soitec Silicon On Insulator Procede de finition d'un substrat de type semi-conducteur sur isolant
US8709551B2 (en) 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US8252691B2 (en) 2010-04-14 2012-08-28 Asm Genitech Korea Ltd. Method of forming semiconductor patterns
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
CZ303655B6 (cs) 2010-04-16 2013-01-30 Skutchanová@Zuzana Zpusob výroby brousicího povrchu skleneného kosmetického prípravku
US8721798B2 (en) 2010-04-30 2014-05-13 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
US8707754B2 (en) 2010-04-30 2014-04-29 Applied Materials, Inc. Methods and apparatus for calibrating flow controllers in substrate processing systems
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US20110294075A1 (en) 2010-05-25 2011-12-01 United Microelectronics Corp. Patterning method
US8912353B2 (en) 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
US8669185B2 (en) 2010-07-30 2014-03-11 Asm Japan K.K. Method of tailoring conformality of Si-containing film
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8357608B2 (en) 2010-08-09 2013-01-22 International Business Machines Corporation Multi component dielectric layer
US9449858B2 (en) 2010-08-09 2016-09-20 Applied Materials, Inc. Transparent reflector plate for rapid thermal processing chamber
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
US8945305B2 (en) 2010-08-31 2015-02-03 Micron Technology, Inc. Methods of selectively forming a material using parylene coating
EP2426233B1 (en) 2010-09-03 2013-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of dialkyl monoalkoxy aluminum for the growth of Al2O3 thin films for photovoltaic applications
US8394466B2 (en) 2010-09-03 2013-03-12 Asm Japan K.K. Method of forming conformal film having si-N bonds on high-aspect ratio pattern
US8192901B2 (en) 2010-10-21 2012-06-05 Asahi Glass Company, Limited Glass substrate-holding tool
US8845806B2 (en) 2010-10-22 2014-09-30 Asm Japan K.K. Shower plate having different aperture dimensions and/or distributions
TWI562204B (en) * 2010-10-26 2016-12-11 Hitachi Int Electric Inc Substrate processing apparatus, semiconductor device manufacturing method and computer-readable recording medium
JP2013542613A (ja) 2010-10-27 2013-11-21 アプライド マテリアルズ インコーポレイテッド フォトレジスト線幅の荒れを制御するための方法及び装置
US8470187B2 (en) 2010-11-05 2013-06-25 Asm Japan K.K. Method of depositing film with tailored comformality
US20120121823A1 (en) 2010-11-12 2012-05-17 Applied Materials, Inc. Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film
KR101866719B1 (ko) 2010-12-20 2018-06-11 에베 그룹 에. 탈너 게엠베하 웨이퍼의 장착을 위한 수용 수단
JP5735304B2 (ja) 2010-12-21 2015-06-17 株式会社日立国際電気 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管
US8314034B2 (en) 2010-12-23 2012-11-20 Intel Corporation Feature size reduction
JP5675331B2 (ja) 2010-12-27 2015-02-25 東京エレクトロン株式会社 トレンチの埋め込み方法
JP2012138500A (ja) 2010-12-27 2012-07-19 Tokyo Electron Ltd タングステン膜又は酸化タングステン膜上への酸化シリコン膜の成膜方法及び成膜装置
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
JP5573666B2 (ja) 2010-12-28 2014-08-20 東京エレクトロン株式会社 原料供給装置及び成膜装置
FR2970110B1 (fr) 2010-12-29 2013-09-06 St Microelectronics Crolles 2 Procede de fabrication d'une couche de dielectrique polycristalline
JP6104817B2 (ja) 2010-12-30 2017-03-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ マイクロ波プラズマを用いた薄膜堆積
JP5609663B2 (ja) 2011-01-18 2014-10-22 旭硝子株式会社 ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法
US8465811B2 (en) 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
US20120263876A1 (en) 2011-02-14 2012-10-18 Asm Ip Holding B.V. Deposition of silicon dioxide on hydrophobic surfaces
US8563443B2 (en) 2011-02-18 2013-10-22 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
US8329599B2 (en) 2011-02-18 2012-12-11 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
TWM412450U (en) 2011-02-21 2011-09-21 Santoma Ltd Ceramic Glass composite electrode and Fluorescent
US8466411B2 (en) 2011-03-03 2013-06-18 Asm Japan K.K. Calibration method of UV sensor for UV curing
CN102655086B (zh) 2011-03-03 2015-07-01 东京毅力科创株式会社 半导体器件的制造方法
JP5820731B2 (ja) 2011-03-22 2015-11-24 株式会社日立国際電気 基板処理装置および固体原料補充方法
JP5203482B2 (ja) 2011-03-28 2013-06-05 株式会社小松製作所 加熱装置
EP2691977B1 (en) 2011-03-31 2019-06-05 IMEC vzw Method for growing a monocrystalline tin-containing semiconductor material
US8900402B2 (en) * 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8298951B1 (en) 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
WO2012141067A1 (ja) 2011-04-15 2012-10-18 タツモ株式会社 ウエハ交換装置およびウエハ支持用ハンド
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8492170B2 (en) 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
US8592005B2 (en) 2011-04-26 2013-11-26 Asm Japan K.K. Atomic layer deposition for controlling vertical film growth
USD655055S1 (en) 2011-04-28 2012-02-28 Carolyn Grace Toll Pet outfit
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US20120304935A1 (en) 2011-05-31 2012-12-06 Oosterlaken Theodorus G M Bubbler assembly and method for vapor flow control
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US8927318B2 (en) 2011-06-14 2015-01-06 International Business Machines Corporation Spalling methods to form multi-junction photovoltaic structure
US9175392B2 (en) 2011-06-17 2015-11-03 Intermolecular, Inc. System for multi-region processing
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US8962400B2 (en) 2011-07-07 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ doping of arsenic for source and drain epitaxy
US20130014697A1 (en) 2011-07-12 2013-01-17 Asm Japan K.K. Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
JP5940342B2 (ja) 2011-07-15 2016-06-29 東京エレクトロン株式会社 基板搬送装置、基板処理システムおよび基板搬送方法、ならびに記憶媒体
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8778448B2 (en) 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
US8551892B2 (en) 2011-07-27 2013-10-08 Asm Japan K.K. Method for reducing dielectric constant of film using direct plasma of hydrogen
JP5740246B2 (ja) * 2011-08-15 2015-06-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20130048606A1 (en) 2011-08-31 2013-02-28 Zhigang Mao Methods for in-situ chamber dry clean in photomask plasma etching processing chamber
JP5712874B2 (ja) * 2011-09-05 2015-05-07 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US20130217240A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
US20130064973A1 (en) 2011-09-09 2013-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Chamber Conditioning Method
US20130217241A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers
US20130217239A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-and-carbon-containing layers for semiconductor processing
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US20130068970A1 (en) 2011-09-21 2013-03-21 Asm Japan K.K. UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations
JP5549655B2 (ja) 2011-09-26 2014-07-16 株式会社安川電機 ハンドおよびロボット
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
US9644796B2 (en) 2011-09-29 2017-05-09 Applied Materials, Inc. Methods for in-situ calibration of a flow controller
US8569184B2 (en) 2011-09-30 2013-10-29 Asm Japan K.K. Method for forming single-phase multi-element film by PEALD
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
TWI541377B (zh) 2011-11-04 2016-07-11 Ａｓｍ國際股份有限公司 形成摻雜二氧化矽薄膜的方法
US8927059B2 (en) 2011-11-08 2015-01-06 Applied Materials, Inc. Deposition of metal films using alane-based precursors
US20130122712A1 (en) 2011-11-14 2013-05-16 Jong Mun Kim Method of etching high aspect ratio features in a dielectric layer
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US10276410B2 (en) 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
USD691974S1 (en) 2011-12-22 2013-10-22 Tokyo Electron Limited Holding pad for transferring a wafer
CN104126228B (zh) 2011-12-23 2016-12-07 英特尔公司 非平面栅极全包围器件及其制造方法
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
US20130183814A1 (en) 2012-01-13 2013-07-18 Applied Materials, Inc. Method of depositing a silicon germanium tin layer on a substrate
USD665055S1 (en) 2012-01-24 2012-08-07 Asm Ip Holding B.V. Shower plate
JP5601331B2 (ja) 2012-01-26 2014-10-08 株式会社安川電機 ロボットハンドおよびロボット
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
JP5912637B2 (ja) 2012-02-17 2016-04-27 東京エレクトロン株式会社 半導体装置の製造方法
US20130224964A1 (en) 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
WO2013134661A1 (en) 2012-03-09 2013-09-12 Air Products And Chemicals, Inc. Barrier materials for display devices
US8912101B2 (en) 2012-03-15 2014-12-16 Asm Ip Holding B.V. Method for forming Si-containing film using two precursors by ALD
USD715410S1 (en) 2012-03-21 2014-10-14 Blucher Metal A/S Roof drain
US9082684B2 (en) 2012-04-02 2015-07-14 Applied Materials, Inc. Method of epitaxial doped germanium tin alloy formation
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US8535767B1 (en) 2012-04-18 2013-09-17 Asm Ip Holding B.V. Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation
US8647439B2 (en) 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
TWI622664B (zh) 2012-05-02 2018-05-01 Ａｓｍ智慧財產控股公司 相穩定薄膜，包括該薄膜之結構及裝置，及其形成方法
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
US8785215B2 (en) 2012-05-31 2014-07-22 Asm Ip Holding B.V. Method for repairing damage of dielectric film by cyclic processes
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US20130330911A1 (en) 2012-06-08 2013-12-12 Yi-Chiau Huang Method of semiconductor film stabilization
US8722546B2 (en) 2012-06-11 2014-05-13 Asm Ip Holding B.V. Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
US9984866B2 (en) 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US9023737B2 (en) 2012-07-11 2015-05-05 Asm Ip Holding B.V. Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
US8784950B2 (en) 2012-07-16 2014-07-22 Asm Ip Holding B.V. Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group
EP2875166B1 (en) 2012-07-20 2018-04-11 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Organosilane precursors for ald/cvd silicon-containing film applications
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US8911826B2 (en) 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
US8664627B1 (en) 2012-08-08 2014-03-04 Asm Ip Holding B.V. Method for supplying gas with flow rate gradient over substrate
US8912070B2 (en) 2012-08-16 2014-12-16 The Institute of Microelectronics Chinese Academy of Science Method for manufacturing semiconductor device
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US8742668B2 (en) 2012-09-05 2014-06-03 Asm Ip Holdings B.V. Method for stabilizing plasma ignition
WO2014039194A1 (en) 2012-09-07 2014-03-13 Applied Materials, Inc. Integrated processing of porous dielectric, polymer-coated substrates and epoxy within a multi-chamber vacuum system confirmation
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US20140077240A1 (en) 2012-09-17 2014-03-20 Radek Roucka Iv material photonic device on dbr
US8921207B2 (en) 2012-09-24 2014-12-30 Asm Ip Holding B.V., Inc. Tin precursors for vapor deposition and deposition processes
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
JP6042160B2 (ja) 2012-10-03 2016-12-14 東京エレクトロン株式会社 成膜方法及び成膜装置
US20140099798A1 (en) 2012-10-05 2014-04-10 Asm Ip Holding B.V. UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same
US9353441B2 (en) 2012-10-05 2016-05-31 Asm Ip Holding B.V. Heating/cooling pedestal for semiconductor-processing apparatus
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP2014086472A (ja) 2012-10-19 2014-05-12 Sinfonia Technology Co Ltd クランプ装置及びワーク搬送ロボット
JP5960028B2 (ja) 2012-10-31 2016-08-02 東京エレクトロン株式会社 熱処理装置
US20140116335A1 (en) 2012-10-31 2014-05-01 Asm Ip Holding B.V. UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus
US9105587B2 (en) 2012-11-08 2015-08-11 Micron Technology, Inc. Methods of forming semiconductor structures with sulfur dioxide etch chemistries
US8784951B2 (en) 2012-11-16 2014-07-22 Asm Ip Holding B.V. Method for forming insulation film using non-halide precursor having four or more silicons
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20140182053A1 (en) 2012-12-29 2014-07-03 Alexander Yeh Industry Co., Ltd. Pullable drain plug
US9018093B2 (en) 2013-01-25 2015-04-28 Asm Ip Holding B.V. Method for forming layer constituted by repeated stacked layers
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
KR20140102782A (ko) 2013-02-14 2014-08-25 삼성전자주식회사 웨이퍼 이송용 블레이드 및 이를 포함하는 웨이퍼 이송 장치
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9666702B2 (en) 2013-03-15 2017-05-30 Matthew H. Kim Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
JP6096547B2 (ja) 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
US8864202B1 (en) 2013-04-12 2014-10-21 Varian Semiconductor Equipment Associates, Inc. Spring retained end effector contact pad
US9142393B2 (en) 2013-05-23 2015-09-22 Asm Ip Holding B.V. Method for cleaning reaction chamber using pre-cleaning process
US9365924B2 (en) 2013-05-23 2016-06-14 Asm Ip Holding B.V. Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power
US9117657B2 (en) 2013-06-07 2015-08-25 Asm Ip Holding B.V. Method for filling recesses using pre-treatment with hydrocarbon-containing gas
US9245740B2 (en) 2013-06-07 2016-01-26 Dnf Co., Ltd. Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
US9123510B2 (en) 2013-06-12 2015-09-01 ASM IP Holding, B.V. Method for controlling in-plane uniformity of substrate processed by plasma-assisted process
US20140367043A1 (en) 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
CN105164791A (zh) 2013-06-26 2015-12-16 应用材料公司 沉积金属合金膜的方法
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
JP5861676B2 (ja) 2013-07-08 2016-02-16 株式会社安川電機 吸着構造、ロボットハンドおよびロボット
USD705745S1 (en) 2013-07-08 2014-05-27 Witricity Corporation Printed resonator coil
US8940646B1 (en) 2013-07-12 2015-01-27 Lam Research Corporation Sequential precursor dosing in an ALD multi-station/batch reactor
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9190263B2 (en) 2013-08-22 2015-11-17 Asm Ip Holding B.V. Method for forming SiOCH film using organoaminosilane annealing
US9136108B2 (en) 2013-09-04 2015-09-15 Asm Ip Holding B.V. Method for restoring porous surface of dielectric layer by UV light-assisted ALD
USD716742S1 (en) 2013-09-13 2014-11-04 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
US10312127B2 (en) 2013-09-16 2019-06-04 Applied Materials, Inc. Compliant robot blade for defect reduction
WO2015048303A1 (en) 2013-09-26 2015-04-02 Applied Materials, Inc Pneumatic end effector apparatus, substrate transportation systems, and methods for transporting substrates
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9029272B1 (en) 2013-10-31 2015-05-12 Asm Ip Holding B.V. Method for treating SiOCH film with hydrogen plasma
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US10431489B2 (en) 2013-12-17 2019-10-01 Applied Materials, Inc. Substrate support apparatus having reduced substrate particle generation
US9698035B2 (en) 2013-12-23 2017-07-04 Lam Research Corporation Microstructures for improved wafer handling
USD726884S1 (en) 2014-02-04 2015-04-14 Asm Ip Holding B.V. Heater block
USD724701S1 (en) 2014-02-04 2015-03-17 ASM IP Holding, B.V. Shower plate
US9370863B2 (en) 2014-02-04 2016-06-21 Asm Ip Holding B.V. Anti-slip end-effector for transporting workpiece
USD732644S1 (en) 2014-02-04 2015-06-23 Asm Ip Holding B.V. Top plate
USD720838S1 (en) 2014-02-04 2015-01-06 Asm Ip Holding B.V. Shower plate
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US20150267295A1 (en) 2014-03-19 2015-09-24 Asm Ip Holding B.V. Removable substrate tray and assembly and reactor including same
US9343350B2 (en) 2014-04-03 2016-05-17 Asm Ip Holding B.V. Anti-slip end effector for transporting workpiece using van der waals force
US9663857B2 (en) 2014-04-07 2017-05-30 Asm Ip Holding B.V. Method for stabilizing reaction chamber pressure
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9464352B2 (en) 2014-05-02 2016-10-11 Asm Ip Holding B.V. Low-oxidation plasma-assisted process
TWI518751B (zh) 2014-05-14 2016-01-21 國立清華大學 成分元素濃度漸變分佈之載子通道及其製作方法
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326427A (en) * 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
CN103201408A (zh) * 2010-11-05 2013-07-10 思诺斯技术公司 具有多个等离子体室的游离基反应器

Also Published As

Publication number Publication date
KR102166199B1 (ko) 2020-10-16
US9018111B2 (en) 2015-04-28
CN114628217A (zh) 2022-06-14
US9412564B2 (en) 2016-08-09
US20150024609A1 (en) 2015-01-22
CN108899296A (zh) 2018-11-27
CN108899296B (zh) 2022-06-21
TW201511163A (zh) 2015-03-16
US20160013024A1 (en) 2016-01-14
CN104332427A (zh) 2015-02-04
KR20150011317A (ko) 2015-01-30
TWI626700B (zh) 2018-06-11

Similar Documents

Publication Publication Date Title
CN104332427B (zh) 具有等离子体能力的半导体反应室
JP6754765B2 (ja) プラズマ生成物を供給するための装置および方法
CN101656200B (zh) 多频等离子体刻蚀反应器
CN105624646B (zh) 借助可再入流路径的阀歧管盲管消除
CN104862671B (zh) 一种反应腔室及等离子体加工设备
TW201419403A (zh) 晶圓處理設備中的化學物質控制特徵
TW201011846A (en) Process and system for varying the exposure to a chemical ambient in a process chamber
CN109075024A (zh) 微体积沉积腔室
KR101842124B1 (ko) 지지 유닛, 기판 처리 장치 및 기판 처리 방법
JP2014532987A5 (zh)
US11348769B2 (en) Plasma-enhanced anneal chamber for wafer outgassing
US9488315B2 (en) Gas distribution apparatus for directional and proportional delivery of process gas to a process chamber
KR20140131330A (ko) 하이브리드 플라즈마 프로세싱 시스템
CN105261546A (zh) 用于产生载能中性粒子的系统和方法
KR101055064B1 (ko) 엘이디 제조 장치
KR102585507B1 (ko) 플라즈마 처리 장치
KR100983730B1 (ko) 엘이디 제조장치
US20210032753A1 (en) Methods and apparatus for dual channel showerheads
JP2016162794A (ja) 真空処理装置
TW202334489A (zh) 半導體處理用閥歧管
TWI834633B (zh) 用於多前驅物的歧管閥
CN102468105B (zh) 电感耦合等离子体装置
CN104752140B (zh) 一种反应腔室及等离子体加工设备
KR20130074417A (ko) 기판 처리 방법
US11107704B2 (en) Gas input system for a substrate processing chamber

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant