JP3140111B2 - 高倍率顕微鏡対物レンズ - Google Patents

高倍率顕微鏡対物レンズ

Info

Publication number
JP3140111B2
JP3140111B2 JP03303407A JP30340791A JP3140111B2 JP 3140111 B2 JP3140111 B2 JP 3140111B2 JP 03303407 A JP03303407 A JP 03303407A JP 30340791 A JP30340791 A JP 30340791A JP 3140111 B2 JP3140111 B2 JP 3140111B2
Authority
JP
Japan
Prior art keywords
lens
cemented
convex
concave
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03303407A
Other languages
English (en)
Other versions
JPH05142477A (ja
Inventor
斎藤良治
横谷麻子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optic Co Ltd filed Critical Olympus Optic Co Ltd
Priority to JP03303407A priority Critical patent/JP3140111B2/ja
Publication of JPH05142477A publication Critical patent/JPH05142477A/ja
Application granted granted Critical
Publication of JP3140111B2 publication Critical patent/JP3140111B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Lenses (AREA)

Description

【発明の詳細な説明】
【0001】
【産業上の利用分野】本発明は、像面が平坦で2次スペ
クトルがよく除去されたセミアポクロマート、アポクロ
マート設計で、かつ、近年、研究分野で盛んに使用され
ている紫外線励起蛍光(励起光波長:365nm)まで
高性能を発揮する高開口数、高倍率顕微鏡対物レンズに
関するものである。
【0002】
【従来の技術】従来より、高開口数、高倍率で2次スペ
クトルがよく除去された顕微鏡対物レンズは提案されて
いる。例えば、特開昭61−275813号のものは、
像面の平坦性はやや劣るけれども、2次スペクトルは非
常によく補正されている。しかし、レンズ枚数が多いこ
とや、後述するが、蛍光用の対物レンズとして高性能を
発揮できない問題点がある。
【0003】蛍光用の対物レンズの場合、特に蛍光用硝
材を用いなければならないために、特開昭61−275
813号や特開昭59−155822号のもので用いる
ハイパークロマティック(接合レンズの屈折率が凸と凹
でほぼ同一で、アッベ数が異なるようにしたもの)によ
る色収差補正は難しくなる。
【0004】また、特開昭51−135545号、特開
昭58−192013号のものは、比較的色収差、像面
湾曲が補正されているが、レンズ構成が簡単なために、
十分に諸収差が補正されていない。さらに、蛍光用の対
物レンズとして高性能を発揮することができない。
【0005】
【発明が解決しようとする課題】近年、特に生物関係の
研究市場では、ある特定の物質を蛍光染色することによ
って細胞にダメージを与えることなく観察できることか
ら、蛍光顕微鏡が広く使用されてきている。蛍光顕微鏡
は、短い波長の光を標本に当て(励起)、その蛍光を観
察するものであり、励起波長の短いものの代表的な光に
i線(365nm)があり、また、最近、生体内のカル
シウムイオンを観察するために、340nmの励起光も
用いられている。
【0006】したがって、蛍光用顕微鏡対物レンズで
は、340nm程度までの波長の透過率が20%以上あ
ることが必要である。さらに、発光する蛍光は微弱なも
のが多いため、対物レンズを構成している硝材に励起光
によって蛍光を発する(自家蛍光)ものがあると、観察
像のコントラストを著しく劣化させる。このために、蛍
光用対物レンズでは、使用できる硝材にかなりの制限が
加わる。例えば、アッベ数が35以下の硝材や、アッベ
数が50以下で屈折率が1.62以上の硝材は、使用で
きない。また、それ以外の範囲の硝材でも、使用できる
ものは限られている。
【0007】上記した従来技術の特開昭59−1558
22号、特開昭61−275813号のものでは、蛍光
用硝材を用いた設計でないということと、ハイパークロ
マティックの構成で色収差をとっているため、凸レンズ
の分散が比較的大きいので、蛍光用硝材を用いては、色
収差補正を十分にできない。
【0008】また、特開昭51−135545号、特開
昭58−192013号、特開昭49−10753号の
ものは、ハイパークロマティックの構成をとらずに、凸
レンズに分散の小さい硝材を使用しているが、蛍光用硝
材を用いて、色収差、像面湾曲等の諸収差の補正を行う
には、不十分なレンズ構成である。
【0009】本発明はこのような状況に鑑みてなされた
ものであり、その目的は、蛍光用硝材を用いて、球面収
差、色収差、像面湾曲等を良好に補正できる構成にした
高倍率、高開口数のセミアポクロマート又はアポクロマ
ート顕微鏡対物レンズを提供することである。
【0010】
【課題を解決するための手段】上記目的を達成する本発
明の高倍率顕微鏡対物レンズは、物体側から順に、平凸
レンズ又は像側に強い凸面を向けた接合面を持つ平凸レ
ンズの第1レンズ群G1、正屈折力の第2レンズ群G
2、凸レンズと凹レンズと凸レンズの3枚接合レンズと
負屈折力の接合面を持つ接合レンズを含む第3レンズ群
G3、像側に凹面を向けた接合メニスカスレンズとこの
接合メニスカスレンズに対向して物体側に凹面を向けた
接合メニスカスレンズを含む、前記第3レンズ群G3か
ら射出された光束を平行光束として射出する第4レンズ
群G4から構成され、以下の条件を満足することを特徴
とするものである。 (1) (n3N−n3P)|H3 |/|r3PN |>0.04 (2) (nIIIN−nIIIP)|HIII |/|rIIIPN |>0.15 (3) ν3P>70 ただし、n3Nは第3レンズ群の凸凹凸3枚接合レンズの
凹レンズの屈折率、n3P、ν3Pはそれぞれ第3レンズ群
の凸凹凸3枚接合レンズの物体側凸レンズの屈折率及び
アッベ数、r3PN は第3レンズ群の凸凹凸3枚接合レン
ズの物体側接合面の曲率半径、H3 は第3レンズ群の凸
凹凸3枚接合レンズの物体側接合面での最大開口数の光
線が通る光線高、nIIIN、nIIIP、rIIIP、HIII はそ
れぞれ第3レンズ群中の前記凸凹凸3枚接合レンズ以外
の少なくとも1面の接合面前後での凹レンズの屈折率、
凸レンズの屈折率、その接合面の曲率半径、及び、その
接合面での最大開口数の光線が通る光線高である。この
場合、下記の条件(4)、(5)を満足することが望ま
しい。 (4) 35<νIVP <45 (5) 50>νIVN ただし、νIVP 、νIVN はそれぞれ第4レンズ群G4の
物体側に凹面を向けた接合メニスカスレンズの凸レンズ
のアッベ数及び凹レンズのアッベ数である。
【0011】
【作用】以下、上記構成を採用した理由と作用について
説明する。本発明の高倍率顕微鏡対物レンズは、上記し
たように、物体側から順に、平凸レンズ又は像側に強い
凸面を向けた接合面を持つ平凸レンズの第1レンズ群G
1、正屈折力の第2レンズ群G2、凸レンズと凹レンズ
と凸レンズの3枚接合レンズと負屈折力の接合面を持つ
接合レンズを含む第3レンズ群G3、像側に凹面を向け
た接合メニスカスレンズとこの接合メニスカスレンズに
対向して物体側に凹面を向けた接合メニスカスレンズを
含む、第3レンズ群G3から射出された光束を平行光束
として射出する第4レンズ群G4から構成されているこ
とを特徴としている。
【0012】本発明の顕微鏡対物レンズにおいて、第1
群G1は平凸レンズであり、平凸レンズの硝材は、油浸
液、カバーガラスとほぼ同一の屈折率を持っていること
と、凸面の曲率は不遊条件を満足していることから、基
準波長の球面収差はほとんど発生しない。この平凸レン
ズが、像側に強い凸面を向けた負の屈折力を持つ接合面
を有することによって、ペッツバール和を正とすること
ができ、対物レンズ全系としての像面湾曲を小さくする
ことができる。
【0013】第2群G2は正屈折力を持ち、光線の発散
を小さくして第3群G3へ導く。
【0014】第3群G3は、球面収差、色収差の補正を
する。瞳位置に近い3枚接合レンズによって色収差の補
正を行う。下記の条件によって、諸収差が良好に補正さ
れる。
【0015】(1) (n3N−n3P)|H3 |/|r
3PN |>0.04 (2) (nIIIN−nIIIP)|HIII |/|rIIIPN
>0.15 (3) ν3P>70 ただし、n3Nは第3群G3の凸凹凸3枚接合レンズの凹
レンズの屈折率、n3P、ν3Pはそれぞれ第3群G3の凸
凹凸3枚接合レンズの物体側凸レンズの屈折率及びアッ
ベ数、r3PN は第3群G3の凸凹凸3枚接合レンズの物
体側接合面の曲率半径、H3 は第3群G3の凸凹凸3枚
接合レンズの物体側接合面での最大開口数の光線が通る
光線高、nIIIN、nIIIP、rIIIP、HIIIはそれぞれ第
3群G3中の前記凸凹凸3枚接合レンズ以外の少なくと
も1面の接合面前後での凹レンズの屈折率、凸レンズの
屈折率、その接合面の曲率半径、及び、その接合面での
最大開口数の光線が通る光線高である。
【0016】上記(1)、(2)の条件は、第1群G
1、第2群G2で発生した球面収差、色収差を補正する
条件で、全体に蛍光用硝材を用いているために、特に凸
レンズは屈折率の低い硝材を使用することになり、各レ
ンズ面での正の屈折力が強くなり、また、収差の発生も
多くなる。これを補正するために、第3群G3の接合面
で比較的強い負の屈折力を必要とする。(1)、(2)
の条件の下限を越えると、正屈折力の面で発生する球面
収差、色収差が補正不足となってしまう。
【0017】また、(3)の条件は、特に軸上色収差を
補正するのに必要な条件で、蛍光用対物レンズのため
に、アッベ数35以下の硝材又はアッベ数50以下でか
つ屈折率1.62以上の硝材が使用できない。したがっ
て、凹レンズに使用する硝材のアッベ数を小さくでき
ず、色収差を補正するためには、凸レンズのアッベ数を
大きくする必要がある。第3群G3の物体側の凸レンズ
は、対物レンズの瞳位置に近く、軸上色収差に最も効い
ているために、(3)の条件を満たす必要があり、
(3)の条件の下限を越えると、色収差が補正不足とな
ってしまう。
【0018】第4群G4は、特に倍率色収差、像面湾
曲、コマ収差を補正している。本発明の対物レンズは蛍
光用対物レンズであるから、屈折率の高い硝材を使えな
い。そのため、2つの接合メニスカスレンズの凹面を向
かい合わせる構成をとり、凹面での光線高を下げて、曲
率を小さくし、ペッツバール和を正としている。
【0019】第4群G4の物体側に凹面を向けた接合メ
ニスカスレンズの硝材の組み合わせを、蛍光対物レンズ
の場合、以下のようにすることによって、倍率色収差は
さらに補正される。
【0020】(4) 35<νIVP <45 (5) 50>νIVN ただし、νIVP 、νIVN はそれぞれ第4群G4の物体側
に凹面を向けた接合メニスカスレンズの凸レンズのアッ
ベ数及び凹レンズのアッベ数である。
【0021】(4)の上限、(5)の下限を越えると、
倍率色収差が補正不足となり、また、(4)の下限を越
えると、蛍光用硝材がなくなるので、蛍光用対物レンズ
としての性能が劣化してしまう。
【0022】さらに、以下の条件を加えることによっ
て、さらに良好に諸収差を補正することができる。
【0023】第2群G2は正の屈折力を持つが、色収差
の発生を小さくするため、分散の小さい異常分散ガラス
を用いることが望ましい。また、本発明の顕微鏡対物レ
ンズでは、第2群G2を正レンズ1枚で構成することが
できる。1枚で構成する場合、レンズ面での正の屈折力
が強くなるため、第3群G3以降に負の屈折力を持った
面がさらに必要となる。第2群G2が正の単レンズから
なる場合、第3群G3レンズ中の条件(1)、(2)以
外の接合面で、以下の条件を満たす面を少なくとも1面
設けることが望ましい。
【0024】 (6) (n3GN −n3GP )H3G/r3G>0.07 ここで、n3GN 、n3GP 、r3G、H3Gは、それぞれ条件
(1)、(2)以外の第3群G3中の少なくとも1面の
接合面前後での凹レンズの屈折率、凸レンズの屈折率、
その接合面の曲率半径、及び、その接合面での最大開口
数の光線が通る光線高である。本条件の下限を越える
と、第2群G2で発生した球面収差、色収差の補正不足
量が多くなる。
【0025】
【実施例】次に、本発明の高倍率顕微鏡対物レンズの実
施例1〜4について説明する。各実施例のレンズデータ
は後記するが、実施例1〜4のレンズ構成を示す断面図
をそれぞれ図1〜図4に示す。
【0026】各群の構成については、第1群G1は、実
施例1は平凸レンズ1枚からなり、実施例2〜3は平凸
レンズと負メニスカスレンズの接合レンズからなる平凸
レンズからなる。第2群G2は、実施例1、3は物体側
に凹面を向けた正メニスカスレンズからなり、実施例2
は両凸レンズからなり、また、実施例4は物体側に凹面
を向けた正メニスカスレンズと両凸レンズ2枚からな
る。第3群3は、実施例1、2は、両凸レンズ、両凹レ
ンズ、両凸レンズの3枚接合レンズと、両凸レンズと負
メニスカスレンズの接合レンズとからなり、実施例3、
4は、両凸レンズ、両凹レンズ、両凸レンズの3枚接合
レンズと、負メニスカスレンズ、両凸レンズ、負メニス
カスレンズの3枚接合レンズとからなる。第4群G4
は、何れの実施例も、両凸レンズと両凹レンズの接合メ
ニスカスレンズと、両凹レンズと両凸レンズの接合メニ
スカスレンズとからなる。
【0027】以下に各実施例のレンズデータを示すが、
記号は、r1 、r2 …は物体側から順に示した各レンズ
面の曲率半径、d1 、d2 …は物体側から順に示した各
レンズ面間の間隔、nd1、nd2…は物体側から順に示し
た各レンズのd線の屈折率、νd1、νd2…は物体側から
順に示した各レンズのアッベ数である。
【0028】各実施例ともに、焦点距離f=1.8m
m、倍率β=100×、開口数NAは、実施例1、2が
1.3、実施例3、4が1.35である。なお、何れも
油浸系であり、カバーガラス厚さは0.17mm、その
屈折率、アッベ数はそれぞれnd =1.521、νd
56.02であり、使用するオイルの屈折率とアッベ数
はそれぞれnd =1.51548、νd =43.1とし
て設計してある。
【0029】実施例1 r1 = ∞ d1 = 3.2039 nd1 =1.51633 νd1 =64.15 r2 = -2.2182 d2 = 0.1200 r3 = -28.5740 d3 = 3.3718 nd2 =1.56907 νd2 =71.30 r4 = -5.6832 d4 = 0.1800 r5 = 9.1739 d5 = 7.6264 nd3 =1.43389 νd3 =95.15 r6 = -7.6030 d6 = 1.5800 nd4 =1.61340 νd4 =43.84 r7 = 8.2087 d7 = 4.8000 nd5 =1.43389 νd5 =95.15 r8 = -10.2274 d8 = 2.6045 r9 = 19.7320 d9 = 3.8000 nd6 =1.43389 νd6 =95.15 r10= -6.6286 d10= 1.4000 nd7 =1.78650 νd7 =50.00 r11= -20.6157 d11= 0.1500 r12= 6.5086 d12= 3.3200 nd8 =1.56907 νd8 =71.30 r13= -15.2083 d13= 8.9523 nd9 =1.69680 νd9 =56.49 r14= 2.3896 d14= 1.4800 r15= -2.9839 d15= 2.2805 nd10=1.69680 νd10=56.49 r16= 20.1507 d16= 3.3886 nd11=1.59551 νd11=39.21 r17= -4.9409 。
【0030】実施例2 r1 = ∞ d1 = 0.3500 nd1 =1.51633 νd1 =64.15 r2 = -0.9000 d2 = 2.8416 nd2 =1.74100 νd2 =52.68 r3 = -2.3456 d3 = 0.1200 r4 = 15.1515 d4 = 4.1915 nd3 =1.56907 νd3 =71.30 r5 = -8.9429 d5 = 0.1800 r6 = 8.2306 d6 = 4.6318 nd4 =1.43389 νd4 =95.15 r7 = -7.2761 d7 = 1.5800 nd5 =1.61340 νd5 =43.84 r8 = 5.9360 d8 = 4.8000 nd6 =1.43389 νd6 =95.15 r9 = -10.2030 d9 = 2.7391 r10= 21.9862 d10= 3.8000 nd7 =1.43389 νd7 =95.15 r11= -5.0817 d11= 1.4000 nd8 =1.78650 νd8 =50.00 r12= -18.0917 d12= 0.1500 r13= 6.3636 d13= 3.3200 nd9 =1.56907 νd9 =71.30 r14= -16.3304 d14= 8.5742 nd10=1.67790 νd10=55.33 r15= 2.9640 d15= 1.4800 r16= -3.5537 d16= 3.3672 nd11=1.74100 νd11=52.68 r17= 9.6890 d17= 4.2315 nd12=1.59551 νd12=39.21 r18= -5.8215 。
【0031】実施例3 r1 = ∞ d1 = 0.3900 nd1 =1.51633 νd1 =64.15 r2 = -1.1107 d2 = 2.4969 nd2 =1.75500 νd2 =52.33 r3 = -2.2119 d3 = 0.1300 r4 = -28.9504 d4 = 3.1687 nd3 =1.49700 νd3 =81.61 r5 = -5.3025 d5 = 0.1700 r6 = 7.3775 d6 = 4.3329 nd4 =1.43389 νd4 =95.15 r7 = -28.7652 d7 = 1.2000 nd5 =1.78650 νd5 =50.00 r8 = 5.9676 d8 = 7.1251 nd6 =1.43389 νd6 =95.15 r9 = -8.0756 d9 = 1.0000 r10= 12.0675 d10= 1.1000 nd7 =1.78650 νd7 =50.00 r11= 6.4347 d11= 4.8006 nd8 =1.43389 νd8 =95.15 r12= -8.4507 d12= 1.0000 nd9 =1.61340 νd9 =43.84 r13= -23.2627 d13= 0.2300 r14= 5.5850 d14= 4.6000 nd10=1.45600 νd10=90.31 r15= -15.1371 d15= 6.2321 nd11=1.67790 νd11=55.33 r16= 2.5373 d16= 2.0000 r17= -3.1322 d17= 2.9411 nd12=1.74100 νd12=52.68 r18= 23.3701 d18= 3.0000 nd13=1.61293 νd13=37.00 r19= -5.1211 。
【0032】実施例4 r1 = ∞ d1 = 0.3900 nd1 =1.51633 νd1 =64.15 r2 = -1.2000 d2 = 2.4412 nd2 =1.75500 νd2 =52.33 r3 = -2.4965 d3 = 0.1300 r4 = -6.0998 d4 = 2.3000 nd3 =1.48749 νd3 =70.20 r5 = -3.8953 d5 = 0.1000 r6 = 23.4492 d6 = 3.0000 nd4 =1.43389 νd4 =95.15 r7 = -9.0406 d7 = 0.1700 r8 = 11.7642 d8 = 6.7864 nd5 =1.43389 νd5 =95.15 r9 = -5.8951 d9 = 1.0000 nd6 =1.78650 νd6 =50.00 r10= 74.3151 d10= 4.0000 nd7 =1.49700 νd7 =81.61 r11= -7.7673 d11= 0.1000 r12= 27.3570 d12= 1.0000 nd8 =1.78650 νd8 =50.00 r13= 6.1179 d13= 5.0000 nd9 =1.43389 νd9 =95.15 r14= -6.3330 d14= 1.0000 nd10=1.61340 νd10=43.84 r15= -11.2308 d15= 0.2300 r16= 6.9394 d16= 3.5000 nd11=1.49700 νd11=81.61 r17= -12.5880 d17= 7.7169 nd12=1.67790 νd12=55.33 r18= 3.3598 d18= 2.0000 r19= -2.7074 d19= 3.0122 nd13=1.74100 νd13=52.68 r20= 16.8593 d20= 2.8000 nd14=1.61293 νd14=37.00 r21= -4.9106 。
【0033】上記各実施例の対物レンズは、例えば以下
に示すレンズデータを有し、図5にレンズ断面を示す結
像レンズと組み合わせて用いられる。ただし、データ
中、r1'、r2'…は物体側から順に示した各レンズ面の
曲率半径、d1'、d2'…は物体側から順に示した各レン
ズ面間の間隔、nd1' 、nd2' …は物体側から順に示し
た各レンズのd線の屈折率、νd1' 、νd2' …は物体側
から順に示した各レンズのアッベ数である。
【0034】 r1'= 68.7541 d1'= 7.7321 nd1'=1.48749 νd1'=70.20 r2'= -37.5679 d2'= 3.4742 nd2'=1.80610 νd2'=40.95 r3'= -102.8477 d3'= 0.6973 r4'= 84.3099 d4'= 6.0238 nd3'=1.83400 νd3'=37.16 r5'= -50.7100 d5'= 3.0298 nd4'=1.64450 νd4'=40.82 r6'= 40.6619 。
【0035】この場合、実施例1〜4の対物レンズと図
5の結像レンズの間の間隔は50mm〜170mmの間
の何れの位置でもよいが、この間隔を100mmとした
場合についの実施例1〜4の球面収差、非点収差、OS
C’(倍率色収差を表すコンラディのOSC’)、コマ
収差を表す収差図をそれぞれ図6〜図9に示す(非点収
差は像高13.25まで、コマ収差は像高9.275の
値を示す。)。なお、上記間隔が50mm〜170mm
の間で100mm以外の位置においてもほぼ同様の収差
状況を示す。
【0036】また、各実施例の前記した条件(1)〜
(6)の値を次の表に示す。
【0037】
【発明の効果】以上の説明から明らかなように、本発明
によると、蛍光用硝材を用いても、球面収差、色収差、
像面湾曲等の諸収差が良好に補正され、高倍率、高開口
数のセミアポクロマート又はアポクロマートの顕微鏡対
物レンズを提供することができる。
【図面の簡単な説明】
【図1】本発明の実施例1の高倍率顕微鏡対物レンズの
レンズ断面図である。
【図2】実施例2のレンズ断面図である。
【図3】実施例3のレンズ断面図である。
【図4】実施例4のレンズ断面図である。
【図5】各実施例の顕微鏡対物レンズと共に用いる結像
レンズのレンズ断面図である。
【図6】実施例1の球面収差、非点収差、OSC’、コ
マ収差を表す収差図である。
【図7】実施例2の図6と同様な収差図である。
【図8】実施例3の図6と同様な収差図である。
【図9】実施例4の図6と同様な収差図である。
【符号の説明】
G1…第1レンズ群 G2…第2レンズ群 G3…第3レンズ群 G4…第4レンズ群
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G02B 9/00 - 17/08 G02B 21/02 - 21/04 G02B 25/00 - 25/04

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項1】 物体側から順に、平凸レンズ又は像側に
    強い凸面を向けた接合面を持つ平凸レンズの第1レンズ
    群G1、正屈折力の第2レンズ群G2、凸レンズと凹レ
    ンズと凸レンズの3枚接合レンズと負屈折力の接合面を
    持つ接合レンズを含む第3レンズ群G3、像側に凹面を
    向けた接合メニスカスレンズとこの接合メニスカスレン
    ズに対向して物体側に凹面を向けた接合メニスカスレン
    ズを含む、前記第3レンズ群G3から射出された光束を
    平行光束として射出する第4レンズ群G4から構成さ
    れ、以下の条件を満足することを特徴とする高倍率顕微
    鏡対物レンズ: (1) (n3N−n3P)|H3 |/|r3PN |>0.04 (2) (nIIIN−nIIIP)|HIII |/|rIIIPN |>0.15 (3) ν3P>70 ただし、n3Nは第3レンズ群の凸凹凸3枚接合レンズの
    凹レンズの屈折率、n3P、ν3Pはそれぞれ第3レンズ群
    の凸凹凸3枚接合レンズの物体側凸レンズの屈折率及び
    アッベ数、r3PN は第3レンズ群の凸凹凸3枚接合レン
    ズの物体側接合面の曲率半径、H3 は第3レンズ群の凸
    凹凸3枚接合レンズの物体側接合面での最大開口数の光
    線が通る光線高、nIIIN、nIIIP、rIIIP、HIII はそ
    れぞれ第3レンズ群中の前記凸凹凸3枚接合レンズ以外
    の少なくとも1面の接合面前後での凹レンズの屈折率、
    凸レンズの屈折率、その接合面の曲率半径、及び、その
    接合面での最大開口数の光線が通る光線高である。
  2. 【請求項2】 下記の条件(4)、(5)を満足するこ
    とを特徴とする請求項1記載の高倍率顕微鏡対物レン
    ズ: (4) 35<νIVP <45 (5) 50>νIVN ただし、νIVP 、νIVN はそれぞれ第4レンズ群G4の
    物体側に凹面を向けた接合メニスカスレンズの凸レンズ
    のアッベ数及び凹レンズのアッベ数である。
JP03303407A 1991-11-19 1991-11-19 高倍率顕微鏡対物レンズ Expired - Fee Related JP3140111B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03303407A JP3140111B2 (ja) 1991-11-19 1991-11-19 高倍率顕微鏡対物レンズ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03303407A JP3140111B2 (ja) 1991-11-19 1991-11-19 高倍率顕微鏡対物レンズ

Publications (2)

Publication Number Publication Date
JPH05142477A JPH05142477A (ja) 1993-06-11
JP3140111B2 true JP3140111B2 (ja) 2001-03-05

Family

ID=17920656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03303407A Expired - Fee Related JP3140111B2 (ja) 1991-11-19 1991-11-19 高倍率顕微鏡対物レンズ

Country Status (1)

Country Link
JP (1) JP3140111B2 (ja)

Cited By (177)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US9384987B2 (en) 2012-04-04 2016-07-05 Asm Ip Holding B.V. Metal oxide protective layer for a semiconductor device
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9412564B2 (en) 2013-07-22 2016-08-09 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US10361201B2 (en) 2013-09-27 2019-07-23 Asm Ip Holding B.V. Semiconductor structure and device formed using selective epitaxial process
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10438965B2 (en) 2014-12-22 2019-10-08 Asm Ip Holding B.V. Semiconductor device and manufacturing method thereof
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
KR102302720B1 (ko) 2014-01-21 2021-09-14 어플라이드 머티어리얼스, 인코포레이티드 저압 툴 교체를 허용하는 원자 층 증착 프로세싱 챔버
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11581220B2 (en) 2017-08-30 2023-02-14 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US11682572B2 (en) 2017-11-27 2023-06-20 Asm Ip Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11694892B2 (en) 2016-07-28 2023-07-04 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11735414B2 (en) 2018-02-06 2023-08-22 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11749562B2 (en) 2016-07-08 2023-09-05 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US12040184B2 (en) 2017-10-30 2024-07-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US12119228B2 (en) 2018-01-19 2024-10-15 Asm Ip Holding B.V. Deposition method
US12125700B2 (en) 2021-01-13 2024-10-22 Asm Ip Holding B.V. Method of forming high aspect ratio features

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3299808B2 (ja) * 1993-03-29 2002-07-08 オリンパス光学工業株式会社 液浸系顕微鏡対物レンズ
JP3363237B2 (ja) * 1994-02-18 2003-01-08 オリンパス光学工業株式会社 蛍光用顕微鏡対物レンズ
JP2951844B2 (ja) * 1994-06-30 1999-09-20 日本信販株式会社 クレジットカードシステム及び該システムを用いたクレジットカードの発行方法
JPH11106233A (ja) * 1997-10-03 1999-04-20 Nikon Corp 低蛍光光学ガラス及びその製造方法
JP5112832B2 (ja) 2006-12-11 2013-01-09 オリンパス株式会社 顕微鏡対物レンズ及びそれを用いた蛍光観察装置
JP7163055B2 (ja) 2018-04-19 2022-10-31 株式会社エビデント 液浸系の顕微鏡対物レンズ

Cited By (194)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US10480072B2 (en) 2009-04-06 2019-11-19 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US9384987B2 (en) 2012-04-04 2016-07-05 Asm Ip Holding B.V. Metal oxide protective layer for a semiconductor device
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US10366864B2 (en) 2013-03-08 2019-07-30 Asm Ip Holding B.V. Method and system for in-situ formation of intermediate reactive species
US10340125B2 (en) 2013-03-08 2019-07-02 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9412564B2 (en) 2013-07-22 2016-08-09 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US10361201B2 (en) 2013-09-27 2019-07-23 Asm Ip Holding B.V. Semiconductor structure and device formed using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
KR102330725B1 (ko) 2014-01-21 2021-11-23 어플라이드 머티어리얼스, 인코포레이티드 저압 툴 교체를 허용하는 얇은 필름 캡슐화 프로세싱 시스템 및 프로세스 키트
KR102302720B1 (ko) 2014-01-21 2021-09-14 어플라이드 머티어리얼스, 인코포레이티드 저압 툴 교체를 허용하는 원자 층 증착 프로세싱 챔버
KR102458230B1 (ko) 2014-01-21 2022-10-21 어플라이드 머티어리얼스, 인코포레이티드 저압 툴 교체를 허용하는 얇은 필름 캡슐화 프로세싱 시스템 및 프로세스 키트
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10438965B2 (en) 2014-12-22 2019-10-08 Asm Ip Holding B.V. Semiconductor device and manufacturing method thereof
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US11749562B2 (en) 2016-07-08 2023-09-05 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11694892B2 (en) 2016-07-28 2023-07-04 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11851755B2 (en) 2016-12-15 2023-12-26 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US10468262B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11695054B2 (en) 2017-07-18 2023-07-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11581220B2 (en) 2017-08-30 2023-02-14 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US12040184B2 (en) 2017-10-30 2024-07-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US11682572B2 (en) 2017-11-27 2023-06-20 Asm Ip Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US12119228B2 (en) 2018-01-19 2024-10-15 Asm Ip Holding B.V. Deposition method
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11735414B2 (en) 2018-02-06 2023-08-22 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11814715B2 (en) 2018-06-27 2023-11-14 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11866823B2 (en) 2018-11-02 2024-01-09 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11615980B2 (en) 2019-02-20 2023-03-28 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US12040229B2 (en) 2019-08-22 2024-07-16 Asm Ip Holding B.V. Method for forming a structure with a hole
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US12119220B2 (en) 2019-12-19 2024-10-15 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11837494B2 (en) 2020-03-11 2023-12-05 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US12125700B2 (en) 2021-01-13 2024-10-22 Asm Ip Holding B.V. Method of forming high aspect ratio features
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Also Published As

Publication number Publication date
JPH05142477A (ja) 1993-06-11

Similar Documents

Publication Publication Date Title
JP3140111B2 (ja) 高倍率顕微鏡対物レンズ
US7046451B2 (en) Immersion microscope objective lens
US7199938B2 (en) Immersion objective lens system for microscope
US7262922B2 (en) Immersion microscope objective lens
JP3457992B2 (ja) 液浸系顕微鏡対物レンズ
US5502596A (en) Immersion microscope objective
JP3280402B2 (ja) 顕微鏡対物レンズ
JP3985937B2 (ja) 蛍光用顕微鏡対物レンズ
JP3318060B2 (ja) 液浸系顕微鏡対物レンズ
US5444573A (en) Microscope objective
JPH08286113A (ja) 対物レンズ
US20030043473A1 (en) Liquid immersion type microscope objective lens
JP4742355B2 (ja) 液浸顕微鏡対物レンズ
JP3454935B2 (ja) 顕微鏡対物レンズ
US7072119B2 (en) Afocal zoom lens for microscopes
EP3557302A1 (en) Dry objective
US6128139A (en) Microscope objective lens
JP3335391B2 (ja) 高倍率顕微鏡対物レンズ
JPH08136816A (ja) 顕微鏡対物レンズ
JP3093835B2 (ja) 顕微鏡対物レンズ
JP2002098903A (ja) 液浸系顕微鏡対物レンズ
US5808807A (en) Microscope objective lens with cemented biconvex triplet
JP3450422B2 (ja) 顕微鏡対物レンズ
EP3623859A1 (en) Objective lens, optical system, and microscope
JPH1195130A (ja) 接眼レンズ

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20000926

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081215

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081215

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091215

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101215

Year of fee payment: 10

LAPS Cancellation because of no payment of annual fees