TW201419403A - 晶圓處理設備中的化學物質控制特徵 - Google Patents

晶圓處理設備中的化學物質控制特徵 Download PDF

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TW201419403A
TW201419403A TW102132460A TW102132460A TW201419403A TW 201419403 A TW201419403 A TW 201419403A TW 102132460 A TW102132460 A TW 102132460A TW 102132460 A TW102132460 A TW 102132460A TW 201419403 A TW201419403 A TW 201419403A
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fluid passage
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Qiwei Liang
xing-long Chen
Kien Chuc
Dimitry Lubomirsky
Soo-Nam Park
Jang-Gyoo Yang
Shankar Venkataraman
Toan Tran
Kimberly Hinckley
Saurabh Garg
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Applied Materials Inc
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Abstract

茲描述氣體分配組合件，包括環形主體、上板材及下板材。該上板材可以界定第一複數孔，並且該下板材可以界定第二和第三複數孔。該上板材和該下板材可以彼此耦接並與該環形主體耦接，使得該第一和第二孔形成通過該氣體分配組合件的通道，並且該上板材和該下板材之間界定一容積。

Description

晶圓處理設備中的化學物質控制特徵 【相關申請案的交叉引用】
本專利申請案主張於2012年09月21日提出申請且標題為「晶圓處理設備中的化學物質控制特徵(Chemical Control Features in Wafer Process Equipment)」的美國臨時專利申請案第61/704,257號的優先權權益，為了所有的目的將該申請案之全部內容以引用方式併入本文中。
本技術係關於半導體製程和設備。更具體而言，本技術係關於處理系統電漿組件。
積體電路能夠被製作出係藉由在基板表面上產生錯綜複雜的圖案化材料層的製程。在基板上產生圖案化材料需要控制的方法，以去除曝光的材料。化學蝕刻被用於各式各樣的目的，包括將光阻中的圖案轉入下面的層，即已經存在表面上的薄化層或特徵的薄化橫向尺寸。往往理想的是擁有一種蝕刻一種材料的速度比蝕刻另一種材料的速度更快的蝕刻製程，以有助於例如圖案轉移製程。這樣的蝕刻製程即所 謂的對第一種材料有選擇性。材料、電路及製程具有多樣性的結果是，已經開發出具有對各種材料的選擇性之蝕刻製程。
在基板處理區域內形成的局部電漿中產生的乾蝕刻可以穿透更受限的溝槽並表現出較少的細微剩餘結構變形。然而，隨著積體電路技術不斷地在尺寸上縮小，輸送前驅物的設備會影響所使用的前驅物和電漿物種之均勻性和品質。
因此，需要有可以在電漿環境中被有效使用同時提供適當降解曲線的經改良系統組件。本技術解決了這些和其他的需求。
茲描述氣體分配組合件，包括環形主體、上板材及下板材。該上板材可以界定第一複數孔，並且該下板材可以界定第二和第三複數孔。該上板材和該下板材可以彼此耦接並與該環形主體耦接，使得該第一和第二孔形成通過該氣體分配組合件的通道，並且該上板材和該下板材之間界定一容積。
該組合件可以包括環形主體，該環形主體具有位於內徑的內環形壁、位於外徑的外環形壁以及上表面和下表面。該環形主體可以進一步包括形成在該上表面中的第一上凹部、在該內環形壁形成在該下表面中的第一下凹部以及在該第一下凹部下方並從該第一下凹部徑向往外形成在該下表面中的第二下凹部。該環形主體還可以在該上表面中界定第一流體通道，該第一流體通道從該第一上凹部徑向往內位於該環形主體中。該組合件可以包括在該第一上凹部與該環形 主體耦接並覆蓋該第一流體通道的上板材，並且該上板材可以界定複數個第一孔。該組合件還可以包括在該第一下凹部與該環形主體耦接的下板材，並具有界定於該下板材中的複數個第二孔，其中該第二孔與界定於該上板材中的第一孔對齊。該下板材還可以界定位於該第二孔之間的複數個第三孔。該上板材和該下板材可以彼此耦接，使得該第一孔與該第二孔對齊而形成穿過該上板材和該下板材的通道。
可以將該組合件之該上板材和該下板材黏合在一起。該組合件之該環形主體可以進一步在該上表面中界定第二流體通道，該第二流體通道位於從該第一流體通道徑向往外處，並且可以將複數個通口界定在界定該第一流體通道之外壁和該第二流體通道之內壁的一部分該環形主體中。該第二流體通道可以位於該上凹部徑向往外，使得該第二流體通道未被該上板材覆蓋。該環形主體可以在該第二流體通道之頂部附近並在該內壁和一外壁中界定第二上凹部，而且該氣體分配組合件可以包括環形構件，該環形構件位於該第二上凹部內，以便覆蓋該第二流體通道。該上凹部可以包括與該第一流體通道之該外壁相交的底部部分。
該組合件可以進一步包括一對隔離通道，其中該對隔離通道中之一者係被界定於該環形主體之該上表面中，並且該對隔離通道中之另一者係被界定於該環形主體之該下表面中。該對隔離通道可以彼此垂直對齊。該第二流體通道可以位於從該上凹部徑向往內，使得在實施例中該第二流體通道被該上板材覆蓋。一部分的該上板材還可以延伸進入該第 二通道到該上凹部之底部下方。該複數個通口可以從該第二流體通道往該第一流體通道向上成一角度，使得該通口在延伸進入該第二通道的該部分上板材下方可流體連通。在實施例中可以配置該隔離通道，使得該對隔離通道中之一者係在從該上凹部徑向往內的位置被界定於該上板材中，並且該對隔離通道中之另一者係被界定於該環形主體之該下表面中，所以該對隔離通道彼此垂直對齊。該環形主體還可以界定環形溫度通道，該環形溫度通道設以接收冷卻流體，可操作該冷卻流體來保持該環形主體之溫度。該溫度通道還可以設以接收加熱元件，該加熱元件位於該通道內，並可操作該加熱元件來保持該環形主體之溫度。
茲亦描述可以包括環形主體的氣體分配組合件。該環形主體可以包括位於內徑的內環形壁、位於外徑的外環形壁、上表面及下表面。可以在該上表面中形成上凹部，並且可以在該下表面中形成下凹部。可以在該下表面中界定第一流體通道，該第一流體通道從該下凹部徑向往內位於該環形主體中。該組合件還可以包括在該上凹部與該環形主體耦接的上板材，其中該上板材界定複數個第一孔。該組合件還可以包括在該下凹部與該環形主體耦接並覆蓋該第一流體通道的下板材。該下板材可以界定複數個第二孔，該第二孔與界定於該上板材中的第一孔對齊。該下板材可以進一步界定複數個第三孔，該複數個第三孔位於該第二孔之間。該上板材和該下板材可以彼此耦接，使得該第一孔與該第二孔對齊而形成穿過該上板材和該下板材的通道。
該氣體分配組合件可以包括界定於該下表面中的第二流體通道，該第二流體通道從該第一流體通道徑向往外位於該環形主體中。可以將複數個通口界定在界定該第一流體通道之外壁和該第二流體通道之內壁的一部分該環形主體中，而且該複數個通口可以設以流體耦接該第二流體通道與該第一流體通道。該第二流體通道可以位於該下凹部徑向往內，使得該第二流體通道可以被該下板材覆蓋，以及其中一部分該下板材延伸進入該第二通道至該下凹部之頂部上方。該複數個通口可以從該第二流體通道往該第一流體通道向下成一角度，使得該通口在延伸進入該第二通道的該部分下板材上方可流體連通。當該第一孔延伸通過該上板材時，該第一孔還可以具有直徑減小的錐形形狀。當該第二孔和該第三孔延伸通過該下板材時，該第二孔和該第三孔可以具有直徑增加的錐形形狀。每個該第二孔和該第三孔還可以包括至少三個形狀或直徑不同的部分。
茲亦描述氣體分配組合件，該氣體分配組合件具有環形主體，該環形主體具有位於內徑的內環形壁、位於外徑的外環形壁、上表面及下表面。該組合件還可以包括與該環形主體耦接的上板材，並且該上板材可以界定複數個第一孔。中間板材可以與該上板材耦接，並且該中間板材可以界定複數個第二孔和第三孔，其中該第二孔與該上板材之該第一孔對齊。該組合件還可以包括下板材，該下板材與該環形主體和該中間板材耦接。該下板材可以界定複數個第四孔，該第四孔與該上板材之該第一孔及該中間板材之該第二孔對 齊，以形成通過該等板材的第一組流體通道。該下板材還可以界定複數個第五孔，該第五孔與該中間板材之該第三孔對齊，以形成通過該中間板材和該下板材的第二組流體通道，其中該第二組流體通道係與該第一組流體通道流體隔離。該下板材可以進一步界定第六組孔，該第六組孔形成通過該下板材的第三組流體通道，其中該第三組流體通道係與該第一和第二組流體通道流體隔離。
該氣體分配組合件之該下板材可以包括的該第四、第五及第六孔之方位使得大部分的該第四孔每個皆被至少四個該第五孔和四個該第六孔包圍。該第五孔可以位於該第四孔周圍，並且該第五孔之中心繞該第四孔之中心彼此間隔約90°，並且該第六孔可以位於該第四孔周圍，並且該第六孔之中心繞該第四孔之該中心彼此間隔約90°，並從該第五孔偏離約45°。該第五孔可以位於該第四孔周圍，並且該第五孔之中心繞該第四孔之中心彼此間隔約60°，以及其中該第六孔係位於該第四孔周圍，並且該第六孔之中心繞該第四孔之該中心彼此間隔約60°，並從該第五孔偏離約30°。
這樣的技術可以提供許多優於傳統系統和技術的效益。例如，可以最少化或避免經由組合件的洩漏，以提供改良的流動特性，而得出改良的製程均勻性。此外，可以經由該組合件輸送多種前驅物，同時將該等前驅物保持彼此流體隔離。茲結合以下的描述和附圖來更詳細地描述這些和其他的實施例以及該等實施例之許多優點和特徵。
100‧‧‧系統工具
102‧‧‧FOUP
104‧‧‧機器人手臂
106‧‧‧保持區域
108a‧‧‧處理腔室
108b‧‧‧處理腔室
108c‧‧‧處理腔室
108d‧‧‧處理腔室
108e‧‧‧處理腔室
108f‧‧‧處理腔室
109a‧‧‧串接製程腔室
109b‧‧‧串接製程腔室
109c‧‧‧串接製程腔室
110‧‧‧第二機器人手臂
200A‧‧‧製程腔室部分
200B‧‧‧製程腔室部分
201‧‧‧遠端電漿系統
203‧‧‧冷卻板材
205‧‧‧氣體入口組合件
206‧‧‧第一通道
207‧‧‧第二通道
210‧‧‧流體供應系統
212‧‧‧蓋體
215‧‧‧第一電漿區域
217‧‧‧面板材
220‧‧‧絕緣環
225‧‧‧噴灑頭
226‧‧‧第一歧管
227‧‧‧下板材
233‧‧‧處理區域
255‧‧‧基板
258‧‧‧供應區域
259‧‧‧孔
265‧‧‧基板支座
290‧‧‧通道
291‧‧‧孔
292‧‧‧軸
294‧‧‧內部噴灑頭容積
295‧‧‧流動
296‧‧‧孔
297‧‧‧軸
297’‧‧‧軸
300‧‧‧氣體分配組合件
301‧‧‧內環形壁
302‧‧‧第一下凹部
303‧‧‧上凹部
304‧‧‧第二下凹部
305‧‧‧外環形壁
306‧‧‧第一流體通道
308a‧‧‧第二流體通道
308b‧‧‧第二流體通道
309‧‧‧凹部空間
310‧‧‧下表面
312‧‧‧第一複數通口
314‧‧‧第二複數通口
315‧‧‧上表面
316‧‧‧環形構件
318‧‧‧隔離通道
320‧‧‧上板材
322‧‧‧流體輸送通道
324‧‧‧隔離通道
325‧‧‧下板材
340‧‧‧環形主體
342‧‧‧加熱器凹部
350‧‧‧導管
355‧‧‧導管
360‧‧‧孔
365‧‧‧第二孔
375‧‧‧第三孔
400‧‧‧氣體分配組合件
401‧‧‧內環形壁
402‧‧‧下凹部
403‧‧‧上凹部
406‧‧‧第一流體通道
408‧‧‧第二流體通道
410‧‧‧下表面
412‧‧‧通口
414‧‧‧通口
415‧‧‧上表面
420‧‧‧上板材
422‧‧‧流體輸送通道
425‧‧‧下板材
440‧‧‧環形主體
460‧‧‧第一孔
465‧‧‧第二孔
475‧‧‧第三孔
500‧‧‧氣體分配組合件
501‧‧‧內環形壁
505‧‧‧外環形壁
510‧‧‧下表面
515‧‧‧上表面
520‧‧‧上板材
525‧‧‧下板材
530‧‧‧中間板材
540‧‧‧環形主體
561‧‧‧第一複數流體通道
566‧‧‧第二複數流體通道
567‧‧‧第四孔
568‧‧‧第五孔
568a‧‧‧第五孔
568b‧‧‧第五孔
568c‧‧‧第五孔
568d‧‧‧第五孔
576‧‧‧第三複數流體通道
577‧‧‧第六孔
藉由參照本說明書的剩餘部分及圖式可以實現對揭示的技術之本質與優點的進一步瞭解。
第1圖圖示示例性處理工具之一個實施例的俯視圖。
第2A-2E圖圖示示例性處理腔室之示意性剖面圖。
第3A-3E圖圖示依據所揭示技術的示例性噴灑頭架構之示意圖。
第4A-4B圖圖示依據所揭示技術的示例性噴灑頭架構之附加示意圖。
第5A-5C圖圖示依據所揭示技術的示例性噴灑頭架構之附加示意圖。
在附圖中，相似的組件及/或特徵可以具有相同的數字參考標號。此外，相同類型的各個組件可以藉由在該參考標號之後接續字母來進行區分，該字母可以在類似的組件及/或特徵之間進行區分。假使只在說明書中使用第一數字參考標號，則該描述係適用於任何一個具有相同第一數字參考標號的類似組件及/或特徵，而與該字母下標無關。
本技術包括用於散佈處理氣體的改良氣體分配組合件或噴灑頭設計，以產生用於在高度更均勻的半導體基板上形成沉積層及/或以更均勻的方式蝕刻沉積層的流動模式。雖然傳統的噴灑頭設計可以簡單地提供用於處理和前驅物氣體的直通分配系統，但現在描述的技術允許在氣體被輸送到基板處理腔室時改良地控制氣體的流動特性。在這樣做時，沉 積操作可以在製造操作的過程中產生更精確的薄膜輪廓。
雖然一些傳統的氣體分配組合件或噴灑頭可以包括例如多個被板材覆蓋的流體通道，但這樣的設計例行地遭遇到在沿著板材與位在通道和內壁之間的主體部分之相交處存有縫隙。當板材與主體耦接時，例如經由黏接、硬焊等，板材可能會變形。因為只能在外邊緣周圍進行耦接，所以沒有額外的黏接可以存在於板材和主體的其他接面處。即使是輕微的板材變形也可能在上板材和環形主體之間的接面處產生不平整的表面，而發生變形的接面位置可能無法適當地與環形主體耦接。因此，在操作中，流體可能會在第一和第二流體通道之間以及在該第一流體通道和中央區域之間洩漏。這種洩漏會影響到進入處理區域的流體輸送，進而影響沉積或蝕刻。然而，本技術的各個態樣藉由提供較不可能變形的組件及/或受變形影響較小的設計克服了許多(若沒有全部)這些問題。
第1圖圖示依據所揭示實施例的沉積、蝕刻、烘烤及/或固化腔室之系統工具100的一個實施例之俯視平面圖。在該圖中，一對FOUP(前開式晶圓傳送盒)102供應基板(例如各種特定直徑的半導體晶圓)，該基板由機器人手臂104接收，並在被放入串接製程腔室109a-c的其中一個基板處理部分108 a-f之前被放入低壓保持區域106。可以使用第二機器人手臂110來在保持區域106和處理腔室108a-f之間來回運送基板。
串接製程腔室109a-c的基板處理部分108a-f可以包 括一或更多個系統組件，用以對基板或基板上的薄膜進行沉積、退火、固化及/或蝕刻。示例性的薄膜可以是流動性介電質，但仍有許多類型的薄膜可以使用該處理工具形成或處理。在一個架構中，可以使用處理腔室的兩對串接處理部分(例如108c-d和108e-f)在基板上沉積介電質材料，並且可以使用第三對串接處理部分(例如108a-b)對沉積的介電質進行退火。在另一種架構中，可以配置處理腔室的兩對串接處理部分(例如108c-d和108e-f)皆在基板上進行介電質薄膜的沉積和退火，同時可以使用第三對串接處理部分(例如108a-b)來紫外線(UV)或電子束固化沉積的薄膜。在仍另一種架構中，可以配置全部的三對串接處理部分(例如108a-f)在基板上進行介電質薄膜的沉積和固化或在沉積的薄膜中蝕刻出特徵。
在又另一種架構中，可以使用兩對串接處理部分(例如108c-d和108e-f)皆沉積和UV或電子束固化介電質，同時可以使用第三對串接處理部分(例如108a-b)來對介電質薄膜進行退火。另外，可以將串接處理部分108a-f中之一或更多者配置為處理腔室，而且串接處理部分108a-f可以是濕式或乾式處理腔室。這些製程腔室可以包括在含有水氣的氛圍中加熱介電質薄膜。因此，系統100的實施例可以包括濕式處理串接處理部分108a-b和退火串接處理部分108c-d，以在沉積的介電質薄膜上進行濕式與乾式退火兩者。將理解的是，系統100可考量用於進行介電質薄膜之沉積、退火及固化的另外架構。
第2A圖為示例性的製程腔室部分200之剖面圖，製程腔室部分200在處理腔室內具有分開的電漿產生區域。在薄膜沉積(例如氧化矽、氮化矽、矽氧氮化物或矽氧碳化物)過程中，可以使製程氣體經由氣體入口組合件205流入第一電漿區域215。遠端電漿系統(RPS)201可以處理氣體，然後該氣體經由氣體入口組合件205前進。可以在氣體入口組合件205內看到兩個截然不同的氣體供應通道。第一通道206攜帶通過遠端電漿系統(RPS)201的氣體，而第二通道207繞過RPS 201。在揭示的實施例中，第一通道206可用於製程氣體，並且第二通道207可用於處理氣體。製程氣體可以在進入遠端電漿系統(RPS)201內的第一電漿區域215之前被激發。依據所揭示的實施例圖示蓋體212、噴灑頭225及上面放有基板255的基板支座265。蓋體212可以是金字塔形、圓錐形或具有狹窄頂部擴展到寬底部的另一個類似結構。也可以使用其他幾何形狀的蓋體212。圖示蓋體(或導電頂部)212和噴灑頭225之間具有絕緣環220，絕緣環220使得AC電勢可被相對於噴灑頭225施加到蓋體212。絕緣環220可以位於蓋體212和噴灑頭225之間，以能夠在該第一電漿區域中形成電容耦合電漿(CCP)。第一電漿區域215中可以另外放置擋板(未圖示)，以影響經由氣體入口組合件205進入該區域的流體流動。
可以藉由本文所述的噴灑頭之實施例使諸如前驅物的流體(例如含矽前驅物)流入處理區域233。衍生自電漿區域215中的製程氣體的激發物種可以穿過噴灑頭225中的 孔，並與從噴灑頭流入處理區域233的前驅物反應。處理區域233中存在很少電漿或沒有電漿存在。在揭示的應用中，製程氣體和前驅物的激發衍生物可以在基板上方的區域中結合，而且有時可以在基板上結合，以在基板上形成可流動的薄膜。對於流動性薄膜，隨著薄膜的生長，更晚添加的材料可以比下方的材料具有更高的流動性。隨著有機物含量因蒸發而減少，流動性可能會降低。使用這種技術可以由流動性薄膜填充縫隙，而不會在沉積完成之後在薄膜內留下傳統的有機物含量密度。仍然可以使用固化步驟來進一步減少或去除沉積薄膜的有機物含量。
在第一電漿區域215中直接激發製程氣體、在RPS中激發製程氣體或上述兩者皆可以提供幾項效益。由於第一電漿區域215中的電漿，可以增加處理區域233內衍生自製程氣體的激發物種濃度。這種增加可能因為電漿在第一電漿區域215中的位置。處理區域233可以比遠端電漿系統(RPS)201更靠近第一電漿區域215，以留下較少的時間讓激發物種經由與其他氣體分子、腔室壁及噴灑頭表面碰撞而離開激發態。
也可以增加處理區域233內衍生自製程氣體的激發物種之濃度均勻性。這可能是第一電漿區域215的形狀所導致，第一電漿區域215的形狀可以與處理區域233的形狀更相似。遠端電漿系統(RPS)201中產生的激發物種相對於通過噴灑頭225中心附近的孔的物種可以行進更遠的距離，以通過噴灑頭225邊緣附近的孔。較長的距離可以產生減少的 激發物種激發，例如可能會導致在基板邊緣附近的生長速率較緩慢。在第一電漿區域215中激發製程氣體可以減輕這種變化。
處理氣體可以在RPS 201中被激發，並且可以在激發狀態中通過噴灑頭225到達處理區域233。或者，可以施加功率到第一處理區域，以激發電漿氣體或是增強來自RPS已經激發的製程氣體。雖然可以在處理區域233中產生電漿，但可以替換地不在處理區域中產生電漿。在一個實例中，處理氣體或前驅物的僅有激發可以來自於激發RPS 201中的處理氣體，以與處理區域233中的前驅物反應。
處理腔室及此討論的工具在2008年9月15日提出申請的專利申請案序號第12/210,940號和2008年9月15日提出申請的專利申請案序號第12/210,982號中有更全面的描述，在不會與所要求保護的態樣和本文的描述不一致的程度下將該等專利申請案以引用方式併入本文中。
第2B-2C圖為在本文所述處理腔室和氣體分配組合件中的前驅物流動製程之一個實施例的側面示意圖。可以將處理腔室部分200中使用的氣體分配組合件稱為雙通道噴灑頭(DCSH)或三通道噴灑頭(TCSH)並詳細描述在這裡的第3A-3G圖、第4A-4B圖及第5A-5C圖的實施例中。該雙通道或三通道噴灑頭可以允許流動性沉積介電質材料，以及在操作過程中分離前驅物和處理流體。可以替代地將該噴灑頭用於允許在反應區外面分離蝕刻劑的蝕刻製程，以提供與腔室組件的有限交互作用。
可以藉由首先引入內部噴灑頭容積294而將前驅物引入分配區，內部噴灑頭容積294係藉由第一歧管或上板材226和第二歧管或下板材227而被界定於噴灑頭225中。該等歧管可以是界定複數個孔的多孔板材。內部噴灑頭容積294中的前驅物可以經由下板材中形成的孔296流動295進入處理區域233。此流動路徑可以與腔室中其餘的製程氣體分離，並且可供處於未反應或基本上未反應狀態的前驅物使用，直到進入基板217和下板材227底部之間界定的處理區域233中。一旦在處理區域233中，則前驅物可以與處理氣體反應。可以經由噴灑頭中形成的側通道(例如如本文中的噴灑頭實施例中所圖示的通道322、422)將前驅物引入噴灑頭225中界定的內部噴灑頭容積294。製程氣體可以處於電漿狀態，該電漿狀態包括來自RPS單元或來自第一電漿區域中產生的電漿的自由基。此外，還可以在處理區域中產生電漿。
也可以提供處理氣體進入由面板材217和噴灑頭225的頂部界定的第一電漿區域215或上容積。處理氣體可以是在第一電漿區域215中被激發的電漿，以產生製程氣體電漿和自由基。或者，在引入面板材217和噴灑頭225頂部界定的第一電漿處理區域215之前，在通過遠端電漿系統之後處理氣體可以已經處於電漿狀態。
然後包括電漿和自由基的處理氣體可以經由通道(例如由噴灑頭板材或歧管中的孔形成的通道290)被輸送到處理區域233，以與前驅物反應。通過通道的處理氣體可以與內部噴灑頭容積294流體隔離，並且當處理氣體和前驅物皆 通過噴灑頭225時，處理氣體可以不與通過內部噴灑頭容積294的前驅物反應。一旦在處理容積中，則處理氣體和前驅物可以混合並反應。
除了製程氣體和介電質材料前驅物之外，可以為了不同的目的在不同的時間引導其他氣體。在沉積過程中，可以引導處理氣體來從腔室壁、基板、沉積薄膜及/或薄膜去除不要的物種。可以在電漿中激發處理氣體，然後使用處理氣體來減少或去除腔室內殘留的含量。在其他所揭示的實施例中，也可以使用沒有電漿的處理氣體。當處理氣體包括水蒸汽時，可以使用質量流量計(MFM)、噴射閥或由市售的水蒸汽產生器來實現輸送。可以從第一處理區域引導處理氣體經過RPS單元或繞過RPS單元，而且可以進一步在第一電漿區域中激發處理氣體。
孔291的開口的軸292和孔296的開口的軸297可以是彼此平行或大致上彼此平行的。或者，軸292和軸297可以彼此成一定角度，例如從約1°至約80°，例如從約1°至約30°。或者，每一個個別的軸292可以彼此成一定角度，例如從約1°至約80°，例如從約1°至約30°，而且每個個別的軸297可以彼此成一定角度，例如從約1°至約80°，例如從約1°至約30°。
個別的開口可以是傾斜的，例如第2B圖中的孔291所圖示，並且開口具有從約1°至約80°的角度，例如從約1°至約30°。孔291的開口的軸292和孔296的開口的軸297可以垂直於或大致上垂直於基板217的表面。或者，軸292和 軸297可與基板表面成一定角度，例如少於約5°。
第2C圖圖示處理腔室200和噴灑頭225的局部示意圖，該示意圖說明來自內部容積294的前驅物流動295經由孔296進入處理區域233。該圖還說明圖示兩個孔296的軸297和297'彼此成一定角度的替代實施例。
第2D圖圖示依據本技術之實施例的另一個示例性處理系統200之簡化剖面圖，處理系統200可以包括替代的流體輸送系統。處理氣體的分配可以藉由使用如圖所示的面板材217來實現。可以經由流體供應系統210輸送處理氣體，並且腔室可以包括或不包括如前面所述包括RPS 201、第一電漿區域215、絕緣環220、噴灑頭225、處理區域233、基座265及基板255的組件。該系統還可以在修改後的分配系統中包括冷卻板材203。
取決於RPS 201的使用，電漿產生氣體及/或電漿激發物種可以通過面板材217中的複數個孔，如第2E圖所示，以更均勻地輸入第一電漿區域215。示例性的架構包括使氣體入口組合件205打開進入氣體供應區域258，氣體供應區域258由面板材217分隔第一電漿區域215所形成，使得氣體/物種流經面板材217中的孔進入第一電漿區域215。可以選擇結構和操作的特徵，以防止電漿從第一電漿區域215明顯回流返回進入供應區域258、氣體入口組合件205及流體供應系統210。結構特徵可以包括選擇使回流電漿失活的面板材217中的孔之尺寸和橫截面幾何形狀。操作特徵可以包括保持氣體供應區域258和第一電漿區域215之間的壓力差，該壓力 差保持電漿單向流動通過噴灑頭225。
處理系統還可以包括與處理腔室電耦接的電源240，以提供電力給面板材217及/或噴灑頭225，而在第一電漿區域215或處理區域233中產生電漿。可以設置電源來根據進行的製程輸送可調整的功率量到腔室。
第2E圖圖示影響通過面板材217的處理氣體分佈的特徵之詳細視圖。如第2D圖和第2E圖中所圖示，面板材217、冷卻板材203及氣體入口組合件205相交而界定氣體供應區域258，可以將製程氣體從氣體入口205輸入氣體供應區域258。氣體可以填充氣體供應區域258並經由面板材217中的孔259流至第一電漿區域215。可以設置孔259來以大致上單向的方式導引流動，使得製程氣體可以流入處理區域233，但也可以在穿過面板材217之後部分地或完全地防止回流進入氣體供應區域258。
另外的雙通道噴灑頭以及此處理系統和腔室被更全面地描述於2011年10月3日提出申請的專利申請案序號第13/251,714號中，為了所有的目的在不會與所要求保護的特徵和本文的描述不一致的程度下將該專利申請案以引用方式併入本文中。
第3A圖圖示氣體分配組合件300的上透視圖。在使用中，氣體分配系統300可以具有大致上水平的方位，使得穿過氣體分配系統300形成的氣體孔之軸可以垂直於或大致上垂直於基板支座的平面(參見第2A圖中的基板支座265)。第3B圖圖示氣體分配組合件300的底部透視圖。第 3C圖為氣體分配組合件300的底部平面圖。第3D圖和第3E圖為氣體分配組合件300之揭示實施例沿第3C圖之線A-A所取得的剖面視圖。
參照第3A-3E圖，氣體分配組合件300通常包括環形主體340、上板材320及下板材325。環形主體340可以是具有位於內徑的內環形壁301、位於外徑的外環形壁305、上表面315及下表面310的環。上表面315和下表面310界定環形主體340的厚度。導管350或環形溫度通道可以被界定於環形主體內，並且可設以接收冷卻流體或加熱元件，冷卻流體或加熱元件可被用於維持或調節環形主體的溫度。如第3A圖所圖示，冷卻通道350可以在環形主體的外徑305上包括入口和出口。這可以提供從處理腔室側的通道，可以使冷卻流體從該通道流過。第3B圖中圖示另外的實施例，其中可以將導管355形成在底部表面310中，並且可以將加熱元件配置在導管355中。加熱器凹部342可以被形成在底部表面310中，並適用於固持加熱元件，而且加熱器凹部342提供了將加熱元件放在環形溫度通道或導管355內的通道。
可以將一或更多個凹部及/或通道形成於環形主體中或一或更多個凹部及/或通道可以由環形主體界定，如在揭示的實施例中圖示的，包括第3D圖中圖示的。環形主體可以包括形成在上表面中的上凹部303以及形成在下表面中的內環形壁301處的第一下凹部302。上凹部303可以是形成在環形主體340中的第一上凹部。環形主體還可以包括形成在下表面310中並在第一下凹部302的下方且徑向往外的第二下 凹部304。如第3D圖所圖示，第一流體通道306可以被界定於上表面315中，並且可以位於環形主體中從上凹部303徑向往內處。第一流體通道306的形狀可以是環形的，並可以形成環形主體340周圍的整個距離。在揭示的實施例中，上凹部303的底部部分與第一流體通道306的外壁相交。第一流體通道也可以是從第二下凹部304至少部分地徑向往外。可以在第一流體通道的內壁中界定複數個通口312，也可以在環形主體340的內環形壁301中界定複數個通口312。通口312可以提供第一流體通道和上板材320和下板材325之間界定的內部容積之間的通道。通口可以以特定的間隔被界定於通道的外周周圍，並且可以促進上板材和下板材之間界定的整個容積區域之分配。通口312之間的間距間隔可以是固定的，或者可以在不同的位置變化，以影響進入容積的流體流動。第一流體通道306的徑向內壁和外壁可以具有相似或不相似的高度。例如，可以將內壁形成為比外壁更高，以影響流體在第一流體通道中的分佈，而避免或大致上避免流體流動於第一流體通道的內壁上方。
再次參照第3D圖，可以將第二流體通道308a界定在上表面315中，第二流體通道308a位於第一流體通道306徑向往外的環形主體中。第二流體通道308a可以是環形的，並且位於從第一流體通道306徑向往外且與第一流體通道306同心。第二流體通道308a也可以位於第一上凹部303的徑向往外，使得第二流體通道308a未被上板材320覆蓋，討論如下。第二複數個通口314可以被界定在界定第一流體通 道306的外壁和第二流體通道308a的內壁的環形主體340部分中。第二複數個通口314可以位於通道周圍預先界定距離的間隔處，以在第二流體通道308a的幾個位置提供到第一流體通道306的流體通道。可以將第二上凹部309形成在第二流體通道308a的頂部中以及在第二流體通道的內壁和外壁兩者中。第二上凹部可設以接收環形構件316，環形構件316可被定位，而藉由徑向往內和往外延伸進入環形主體並通過通道的內壁和外壁進入凹部空間309來覆蓋第二流體通道。可以將環形構件316與環形主體340燒黏，以與上面的第二流體通道308a流體隔絕。在操作中，前驅物可以從處理腔室的外部流至位於環形主體340側邊的輸送通道322。流體可以流入第二流體通道308a、通過第二複數通口314進入第一流體通道306、通過第一複數通口312進入上和下板材之間界定的內部容積以及通過位在底部板材中的第三孔375。因此，可以將以這樣的方式提供的流體與經由孔360輸入第一電漿區域的任何流體隔離或大致上隔離，直到流體個別離開下板材325。
藉由提供環形構件316來覆蓋第二流體通道308a，可以大致上消除第一和第二流體通道之間的洩漏，而且在揭示的實施例中可以完全消除第一和第二流體通道之間的洩漏。環形構件316可以與環形主體340耦接，例如藉由在凹部309中黏合通道的兩側。由於環形構件316並未徑向延伸超出第二流體通道308a和凹部309的寬度，故環形構件316較不易產生徑向變形。因此，可以產生改良的覆蓋輪廓，並 且可以大致地或完全地防止從第二流體通道的洩漏。
上板材320可以是圓盤形的主體，並且可以在第一上凹部303與環形主體340耦接。因此，上板材320可以覆蓋第一流體通道306，以防止或大致上防止流體從第一流體通道306的頂部流出。上板材可以具有選擇來與上凹部303的直徑相配合的直徑，並且上板材可以包含複數個貫穿上板材形成的第一孔360。第一孔360可以延伸超出上板材320的底部表面，從而形成數個凸起的筒體。在每個凸起的筒體之間可以有縫隙。如第3A圖所見，可以在上板材320上將第一孔360排列成多邊形圖案，使得通過最外面的第一孔360之中心畫出的假想線界定或大致上界定多邊形的圖，該圖可以是例如六邊的多邊形。
該圖案還可以具有交錯的第一孔360之行排列的特徵，第一孔360之行數從約5至約60行，例如從約15至約25行。每一行沿著y軸可以具有從約5至約20個第一孔360，並且每一行被約0.4和約0.7英吋之間的間距隔開。在一行中的每個第一孔360可以沿著x軸與前一個孔從各自的直徑相距約0.4和約0.8英吋之間。第一孔360可以沿著x軸與另一行中的孔從各自的直徑錯開約0.2和約0.4英吋之間。在每一行中可以將第一孔360以等間距彼此隔開。參照第3D圖，上板材320的邊緣部分可以包含第二厚度，第二厚度大於位於更靠近板材中央部分的第一厚度，並且第二厚度可以等於或大致上等於第一上凹部303外壁的高度。邊緣部分可以從外邊緣徑向往內延伸等於或大致上等於上凹部之底部部分的距 離。因此，在揭示的實施例中，邊緣部分可以不徑向往內延伸超過第一上凹部303的最往內部分。
下板材325可以具有圓盤形的主體，該圓盤形的主體具有數個穿過該主體形成的第二孔365和第三孔375，特別是如第3C圖所見。下板材325可以有多個厚度，並且界定部分的厚度大於上板材320的中央厚度，而且在揭示的實施例中，界定部分的下板材325厚度為上板材320厚度的至少約兩倍。下板材325還可以具有與環形主體340在第一下凹部302的內環形壁301之直徑相匹配的直徑。如前所述，下板材325可以包含多個厚度，例如板材的第一厚度可以是第三孔375延伸通過的厚度。大於第一厚度的第二厚度可以是與環形主體340的第一下凹部302相交的板材邊緣區域之厚度。可以將相對於第一下凹部的第二厚度之尺寸製作為類似於相對於第一上凹部的上板材邊緣部分。在揭示的實施例中，第一和第二厚度大致上是相似的。大於第二厚度的第三厚度可以是圍繞第二孔365的板材厚度。例如，第二孔365可以被下板材325界定為向上延伸到上板材320的筒體。以這種方式，可以在彼此流體隔離的第一和第二孔之間形成通道。此外，可以將上板材和下板材之間形成的容積與第一和第二孔之間形成的通道流體隔離。因此，流過第一孔360的流體將流過第二孔365，並且在板材之間的內部容積內的流體將流過第三孔375，而且流體將被彼此流體隔離，直到經由第二或第三孔離開下板材325為止。這種分離可以提供許多效益，包括防止自由基前驅物在到達反應區之前接觸第二前驅物。藉由防 止氣體的相互作用，可以在需要沉積的處理區域之前最小化腔室內的沉積。
可以將第二孔365排列在與上述第一孔360的圖案對齊的圖案中。在一個實施例中，當將上板材320和底部板材325定位成一個在另一個的頂部時，第一孔360和第二孔365的軸是對齊的。在揭示的實施例中，上板材和下板材可以彼此耦接或直接接合在一起。在任何一種情況下，板材的耦接可以發生，使得第一和第二孔對齊而形成通過上板材和下板材的通道。複數個第一孔360和複數個第二孔365可以使各自的軸互相平行或大致上互相平行，例如孔360、365可以是同心的。或者，複數個第一孔360和複數個第二孔365可以使各自的軸相互呈約1°至約30°的角度配置。在底部板材325的中心可以沒有第二孔365。
如前所述，氣體分配組合件300通常是由環形主體340、上板材320及下板材325所組成。下板材325可以位於第一下凹部303內，並使凸起的筒體面向上板材320的底部表面，如第3D圖所圖示。然後可以將底部板材325定位在第一下凹部304中，並將底部板材325轉動定位，使得第一和第二孔360、365的軸可以對齊。可以將上板材320與底部板材325密封耦接，以將第一和第二孔360、365與第三孔375流體隔離。例如，可以將上板材320焊接於底部板材325，使得下板材325上的凸起筒體之表面和上板材320的底部表面之間產生密封。然後可以將上板材320和底部板材325以電子束焊接或其他方式結合於環形主體340。可以用電子束焊接 上板材320，使得環形主體的外緣和上凹部303的內緣之間產生密封。可以用電子束焊接底部板材325，使得環形主體的外緣和內環形壁301之間產生密封。在揭示的實施例中，氣體分配組合件300的表面可以是電拋光的、鍍有金屬的或是塗有各種金屬類物質或氧化物的。
複數個第二孔365和複數個第三孔375可以形成交替的交錯行。可以將第三孔375排列在底部板材325的至少兩個第二孔365之間。在每個第二孔365之間可以有第三孔375，第三孔375在兩個第二孔365之間被均勻地隔開。還可以有數個第三孔375以六邊形的圖案位在底部板材325的中心周圍，例如6個第三孔，或是數個第三孔375形成另一種幾何形狀。底部板材325的中心可以沒有第三孔375形成。在形成第二孔多邊形圖案頂點的周邊第二孔365之間也可以沒有設置第三孔375。或者，可以有第三孔375位於周邊第二孔365之間，而且還可以有另外的第三孔375位於從周邊第二孔365往外，而形成最外環的孔，例如如第3C圖中所圖示。
或者，第一和第二孔的排列可以形成任何其他的幾何圖案，並且可以分佈成基於板材中心位置彼此同心往外設置的孔環。作為一個實例並且不限制本技術的範圍，第3A圖圖示由該等孔形成的圖案，該圖案包括從中心往外延伸的同心六邊形環。每個往外設置的環可以具有與前述往內設置的環相同數量、更多的或更少的孔。在一個實例中，基於每個環的幾何形狀，每個同心環可以具有額外數量的孔。在六邊形的實例中，每個向外移動的環可以比直接向內設置的環多6 個孔，並且第一個內環具有6個孔。有了位置最接近上板材和底部板材中心的第一孔環，上板材和底部板材可以具有兩個以上的環，並且取決於所使用的孔幾何圖案，上板材和底部板材可以具有約1個和約50個之間的孔環。或者，板材可以具有約2個和約40個之間的環，或多達約30個環、約20個環、約15個環、約12個環、約10個環、約9個環、約8個環、約7個環、約6個環等或更少的環。在一個實例中，如第3A圖所圖示，在示例性的上板材上可以有9個六邊形環。
同心孔環也可以沒有其中一個同心孔環，或是同心孔環可以從其他的環之間移除向外延伸的一個孔環。例如參照第3A圖，其中板材上有示例性的9個六邊形環，但該板材可以替代地具有8個環，而且可以是第4環被移除。在這樣的實例中，可以不在會以其他方式設置第4環的地方形成通道，這可以重新分配通過孔的氣體流體流動。這些環仍然還可以從幾何圖案移除某些孔。例如再次參照第3A圖，可以將第10個六邊形孔環形成在圖示的板材上作為最外面的環。然而，該環可以不包括可形成六邊形圖案頂點的孔或其他在該環內的孔。
第一、第二及第三孔360、365、375可以全部適用於允許流體通過其中。第一和第二孔360、365可以具有圓柱形的形狀，並且可以替代地具有各種不同的橫截面形狀，包括圓錐形、圓柱形或多種形狀的組合。在一個實例中，如第3D圖所圖示，第一和第二孔可以具有大致上圓柱形的形狀，並且第三孔可以由一系列不同直徑的圓柱所形成。例如，第 三孔可以包含三個圓柱，其中第二圓柱的直徑小於其他圓柱的直徑。可以使用這些和許多其他的變化來調節流體通過該等孔的流動。
當所有的第一和第二孔具有相同的直徑時，通過通道的氣體流動可能不會是均勻的。當製程氣體流入處理腔室時，氣體的流動可以是例如較大量的氣體優先流過某些通道。因此，可以將某些孔的直徑從某些其他的孔縮小，以在前驅物流被輸入第一電漿區域時重新分配前驅物流。可以由於該等孔的相對位置(例如靠近擋板)而選擇性地縮小該等孔的直徑，因此，可以縮小靠近擋板的孔之直徑，以減少通過這些孔的製程氣體流量。在一個實例中，如第3A圖所圖示，其中9個六邊形的第一孔環同心地位於板材上，某些孔環可以使一些或全部的孔直徑縮小。例如，第4環可以包括直徑比其他環的第一孔小的第一孔子集。或者，第2環至第8環、第2環至第7環、第2環至第6環、第2環至第5環、第2環至第4環、第3環至第7環、第3環至第6環、第3環至第5環、第4環至第7環、第4環至第6環、第2環和第3環、第3環和第4環、第4環和第5環、第5環和第6環等或是一些環的其他組合可以使位在該等環中的一些或全部的孔之孔徑縮小。
再次參照第3D圖，可以將一對隔離通道318形成在環形主體340中。該對隔離通道318的其中一個可以被界定在環形主體340的上表面315中，而該對隔離通道318的另一個可以被界定在環形主體340的下表面310中。該對隔 離通道可以彼此垂直對齊，而且在揭示的實施例中，該對隔離通道可以處於直接垂直對齊。或者，該對隔離通道可以在任一方向偏離垂直對齊。在揭示的實施例中，該等通道可以提供諸如O形環的隔離阻障所用的位置。
來到第3E圖，依據揭示的實施例圖示出氣體分配組合件的附加特徵，並且該等附加特徵可以包括許多上述關於第3D圖的特徵。組合件300包括具有內環形壁301、外環形壁305、上表面315及下表面310的環形主體340。環形主體340可以另外包括上凹部303、第一下凹部302及第二下凹部304。環形主體還可以具有形成在上表面315中的第一流體通道306，並具有複數個界定在內通道壁中的通口312，通口312提供流體進入上板材320和下板材325之間形成的容積的通道。下板材325可以在第一下凹部302與環形主體340耦接。下板材325還可以另外界定第一和第二孔，如以上關於第3D圖所討論的。
上板材320可以在上凹部303與環形主體340耦接。可以類似於第3D圖的第一流體通道306界定第一流體通道306。或者，第一流體通道306的內壁和外壁可以具有大致上相似的高度，而且在揭示的實施例中，第一流體通道306的內壁和外壁可以具有相同的高度。上板材320可以覆蓋第一流體通道306，以防止來自第一流體通道306頂部的流動路徑。第一複數通口312可以類似於第3D圖中的通口312被界定於環形主體中。或者，第一複數通口312可以在內環形壁301被部分地形成於上表面315中。當上板材320與環形主體 340耦接時，上板材可以進一步界定複數個通口312的頂部。
可以在環形主體340的上表面315中形成第二流體通道308b，並且第二流體通道308b可設以接收通過流體輸送通道322輸送的流體，如前面所述。然而，第二流體通道308b可以位於從第一上凹部303徑向往內，使得第二流體通道308b被上板材320覆蓋。第二流體通道308b的外壁可以和上凹部303的底部相交。可以由形成第二流體通道308b內壁的部分環形主體和第一流體通道306的外壁界定第二複數通口314。該等通口可以提供第一和第二流體通道之間的流體連通，並且可以類似地位於如上所述之處。上板材320可設以在與環形主體340接觸的每個接面限制變形。例如，上板材320可以在設置孔的上板材320之中央部分中具有第一厚度，並且在板材的邊緣部分可以具有大於第一厚度的第二厚度。這些邊緣部分可以從上凹部303延伸於第二流體通道308b、第一流體通道306及內環形壁301上方。上板材320在邊緣部分增加的厚度可以更好地吸收在上板材耦接於環形主體的過程中產生的應力，從而減少變形。
部分的上板材320可以延伸進入第二流體通道308b一段距離。該部分的上板材可以延伸進入第二通道到上凹部303的底部以下一段高度。在揭示的實施例中，在上表面315中將第二流體通道308b形成到比第一流體通道306更大的深度。延伸進入第二流體通道308b的上板材320部分可以延伸到與第一流體通道306在環形主體340內的深度相同的深度。藉由使部分的上板材延伸進入第二流體通道308b，當將 上板材與環形主體340耦接時可能出現的上板材變形可以不會在第一和第二流體通道之間產生任何洩漏路徑，因為變形的程度可以被延伸進入第二流體通道308b的上板材320量克服。可以類似於第3D圖的通口314來界定第二複數通口314，或者可以類似於第一複數通口312將第二複數通口314部分地形成在上表面中。複數個通口314的頂部可以由上板材320的底部表面界定。可以在第二流體通道308b和第一流體通道306之間以垂直增加的角度形成第二複數通口314。藉由以一定的角度形成該等通口，該等通口可以不會被延伸進入第二流體通道308b的上板材部分阻塞。在揭示的實施例中，第二複數通口314可以是形成在環形主體中的各種形狀或尺寸的狹縫。可以以從第二流體通道308b往第一流體通道306增加或向上的角度形成該等狹縫，使得該等通口在該部分的上板材320下方延伸進入第二流體通道308b為流體連通的。
在揭示的實施例中，可以將一對隔離通道324形成在氣體分配組合件中，其中至少一部分的隔離通道與形成第二流體通道308b內壁和第一流體通道306內壁的部分環形主體垂直對齊。為了產生這種配置，可以將該對隔離通道中的一個界定在上板材中從第一上凹部徑向往內的位置。可以將該對隔離通道中的另一個界定在環形主體的下表面310中，並且該對隔離通道可以彼此垂直對齊。在揭示的實施例中，該對隔離通道可以處於直接垂直對齊。在操作中，隔離通道可以接收例如O型環或其他的隔離裝置。藉由在與第一和第二流體通道的共用壁至少部分對齊的位置提供隔離通道，可 以使用在隔離通道產生的壓縮來偏移、減少或去除在上板材320和環形主體的界面處可能發生的變形。
參照第4A-4B圖，提供的氣體分配組合件400或噴灑頭包括第一或上板材420和第二或下板材425，並且可以將下板材425的頂部設置成與上板材420的底部耦接。上板材和下板材可以是具有複數個孔的多孔板材，該複數個孔被界定在每塊板材中。在使用中，可以用使噴灑頭中形成的任何孔的軸可以垂直於或大致上垂直於基板平面的這種方式來設定噴灑頭400對基板的方位。
參照第4B圖，環形主體440可以包括在上表面415中的上凹部403和在下表面410中的下凹部402。第一流體通道406可以被界定在下表面410中，並且可以從下凹部402徑向往內位於環形主體中。第一流體通道的形狀可以是環形的，並且該通道可以被下板材425覆蓋。可以在內環形壁401將複數個通口412至少部分地界定在環形主體中，並且可以沿著整個通道在界定的間隔處設置複數個通口412，該等間隔可以相等或是在該複數個通口各處被修改。在揭示的實施例中，下板材425可以界定複數個通口412的頂部部分。可以在上凹部403將上板材420與環形主體440耦接，並且上板材420可以界定複數個第一孔460。可以在下凹部402將下板材425與環形主體440耦接，並且下板材425可以覆蓋第一流體通道406。下板材425可以界定複數個第二孔465，複數個第二孔465可以與上板材420中界定的第一孔460對齊，以形成穿過組合件400的第一組通道。下板材425還可以界 定複數個位於第二孔465之間和周圍的第三孔475。下板材425可以包括在第二孔465周圍的凸起部分，該凸起部分向上延伸到上板材420，以產生穿過組合件的流體隔離通道。
可以將上板材和下板材彼此密封耦接，使得第一和第二孔以該凸起部分對齊而形成通過上板材和下板材的通道，使得內部容積被界定於上板材和下板材之間。可以經由複數個通口412流體連接該容積。可以設置該組合件，使得第一流體可以流過第一孔並經由第一和第二孔之間形成的隔離通道延伸通過組合件400。此外，可以使第二流體經由第一流體通道406並輸入上板材和下板材之間界定的容積而流過該組合件。流過該容積的流體可以流過第三孔和下板材凸起部分的周圍，使得第一和第二流體可以經由噴灑頭流體隔離並保持分離，直到第一和第二流體分別通過第二和第三孔離開下板材為止。
可以將第一孔460成形為抑制離子帶電物種遷移出前述的第一電漿區域215，同時允許不帶電的中性或自由基物種通過噴灑頭225或氣體分配組合件400。這些不帶電的物種可以包括由較低反應性的載送氣體輸送通過孔的高反應性物種。如上所注意的，可以減少通過孔的離子物種遷移，並且在某些情況下可以完全抑制通過孔的離子物種遷移。控制通過氣體分配組合件400的離子物種量可以對被帶入而與下方的晶圓基板接觸的氣體混合物提供增多的控制，進而增加對氣體混合物之沉積及/或蝕刻特性的控制。因此，在揭示的實施例中，第一孔可以包括延伸通過上板材並且直徑減小的錐 形形狀，以控制流體的特性。具體地，此上板材可以作為離子抑制板材或離子阻擋件，使得配置有效地將離子抑制直接結合於噴灑頭設計中，而且可以不用額外需要另外的抑制元件。
每個第一孔460可以具有往第一圓柱形部分逐漸變細的錐形入口部分，該第一圓柱形部分與第二孔465相交。第二孔可以包括各種形狀的多個部分，以進一步影響通過第一和第二孔之間形成的通道的流體流動。在示例性的設計中，第二孔465可以包括多個直徑增加並通向錐形部分的圓柱形部分，該錐形部分以增加的直徑延伸到下板材425的底部。第三孔475可以同樣地包括各種形狀的多個部分，並且在示例性的配置中，第三孔475可以包括多個直徑減少並通向錐形部分的圓柱形部分，該錐形部分以增加的直徑延伸到下板材425的底部。在揭示的實施例中，該第二和第三孔包括至少三段不同的形狀或直徑。
對於離子抑制組合件，例如示例性的配置組合件400，孔的數量可以大於例如第3D圖和第3E圖的示例性組合件配置中的孔之數量。提供更大量的孔可以增加輸入腔室之處理區域的物種之密度。第4A圖圖示氣體分配組合件400的底視圖，氣體分配組合件400包括具有第二孔465和第三孔475的下板材425。雖然只圖示出四分之一圓的孔，將容易瞭解的是，該等孔係被類似地界定於該組合件的全部四個四分之一圓中。雖然第3A圖圖示示例性的9個六邊形孔環，但例如第4A圖圖示的大小類似的氣體分配組合件可以包括約18 個和25個之間的孔環。在第4A-4B圖中圖示的高密度設計中的孔之總數可以包括2-10倍多的第二孔和第三孔總數。如第3E圖所圖示的高密度配置可以包括直接在板材中心的附加第二孔365。
參照回第4B圖，氣體分配組合件可以另外包括界定於下表面410中的第二流體通道408，第二流體通道408位於從第一流體通道406徑向往外的環形主體440中。可以在整個環形主體360周圍形成第二流體通道408，並且第二流體通道408還可以與第一流體通道406同心。可以將第二複數通口414界定於環形主體中的至少一部分中，所述環形主體中的至少一部分為界定第一流體通道406的外壁和第二流體通道408的內壁之部分。第二流體通道408也可以位於下凹部的徑向往內處，使得第二流體通道被下板材425覆蓋。與第4E圖中描述的設計類似，一部分的下板材可以延伸進入第二流體通道408。
該部分的下板材425可以延伸進入第二通道到下凹部402的頂部上方某個高度。在揭示的實施例中，在下表面410中將第二流體通道408形成至比第一流體通道406更高的高度。延伸進入第二流體通道408的該部分下板材425可以在環形主體440內延伸到相當於第一流體通道406或更小的高度，或延伸到相當於約第一流體通道406的一半高度的高度。如上所說明的，延伸進入第二流體通道408的下板材部分可以限制當下板材與環形主體440耦接時可能發生的下板材變形之影響。可以類似於第3D圖或第3E圖的通口來界定 第二複數通口414，但是是在下表面410中。複數通口414的底部可以由下板材425的頂部表面界定。
可以在第二流體通道408和第一流體通道406之間以垂直減少的角度形成第二複數通口414。藉由以一定的角度形成該等通口，該等通口可以不會被延伸進入第二流體通道408的下板材部分阻塞。在揭示的實施例中，第二複數通口414可以是形成在環形主體中的各種形狀或尺寸的狹縫，而且可以以從第二流體通道408往第一流體通道406向下的角度形成該等狹縫，使得該等通口在該部分的下板材上方延伸進入第二流體通道408為流體連通的。在操作中，可以經由腔室中的側邊通口(例如流體輸送通道422)輸送流體通過氣體分配組合件400。流體可以流入第二流體通道408，然後通過第二複數通口414，第二複數通口414可以將第二流體通道408與第一流體通道406流體耦接。然後，流體可以流過第一複數通口412，第一複數通口412將第一流體通道406與上板材420和下板材425之間界定的容積流體耦接。流體可以繼續流過第三孔475而進入處理區域。在此配置中，可以將這樣的流體與形成通過氣體分配組合件的通道的第一和第二孔流體隔離。以此方式，該分配組合件可以防止此流體的流動進入第一孔，並且可以防止流體在沒有壓力差或強制流動下流過氣體分配組合件的頂部。
第5A圖圖示示例性的氣體分配組合件500，氣體分配組合件500設以提供到處理區域的三個隔離流體路徑。組合件500可以包括與先前所述類似的組件，包括具有位在內 徑的內環形壁501的環形主體540、位在外徑的外環形壁505、上表面515及下表面510。氣體分配組合件500可以包括與環形主體540耦接的上板材520，上板材520界定第一組孔。中間板材530可以與上板材520耦接，並且可以包含複數個第二孔和複數個第三孔。可以耦接中間板材530，使得第二孔與上板材的第一孔對齊。該組合件可以另外包括與環形主體540和中間板材530耦接的下板材525。下板材525可以界定與上板材的第一孔和中間板材的第二孔對齊的複數個第四孔，以形成通過板材的第一複數流體通道561。下板材也可以界定與中間板材的第三孔對齊的第五組孔，以形成通過中間板材和下板材的第二複數流體通道566。可以將第二複數流體通道566與第一複數流體通道561流體隔離。下板材還可以界定第六組孔，該第六組孔形成通過下板材的第三複數流體通道576。可以將第三複數流體通道576與第一和第二複數流體通道流體隔離。
在操作中，可以設置氣體分配組合件，使得兩種流體可以從側邊被輸入噴灑頭但在該組合件中形成的兩個流體隔離的容積中保持流體分離。可以從氣體分配組合件500的上方輸送第一流體，並且該第一流體可以包括例如RPS或第一電漿區域產生的自由基物種。該第一流體可以流過第一複數流體通道561，可以將第一複數流體通道561個別隔離，並且無法從組合件容積內進入第一複數流體通道561。可以將第二流體從側邊通口或第一輸送通道引入噴灑頭中，第一輸送通道在上板材520和中間板材530之間輸送第二流體。第二 流體可以在此第一界定的容積內流動，並通過第二複數流體通道。這些通道也可以與穿過組合件形成的其他通道流體隔離。可以將第三流體從另外的側邊通口或第二輸送通道引入噴灑頭中，第二輸送通道在中間板材530和下板材525之間輸送第三流體。第三流體可以在此第二界定的容積內流動，並通過第三複數流體通道，第三複數流體通道可以與穿過組合件形成的其他通道流體隔離。可以將另外的側邊通口或第二輸送通道以及第二界定容積與第一輸送通道和第一界定容積流體隔離。以此方式，可以將三種流體經由單一氣體分配組合件輸入處理區域，但可以將該等流體分開直到該等流體每個離開氣體分配組合件並進入處理區域。
雖然各種孔的配置也被所揭示的技術涵括，但第5B圖和第5C圖圖示第四孔567、第五孔568及第六孔577的兩個示例性配置。圖式顯示下板材525和第四、第五及第六孔的示例性方位之部分平面圖。在一些揭示的配置中，下板材可以包括的第四、第五及第六孔方位使得大部分的第四孔567每個皆被至少四個第五孔568和四個第六孔577包圍。
如第5B圖所圖示，第四孔567可以具有其中四個第五孔568位於每個第四孔567周圍。此外，其中四個第六孔577也可位於每個第四孔567的周圍。在此配置中，第五孔568a-d可以位於第四孔567周圍，並且如由圖所辨識，第五孔的中心繞著其中一個第四孔567的中心彼此間隔約90°。同樣地，第六孔577可以位於第四孔周圍，並且如由圖所辨識，第六孔的中心繞著第四孔577的中心彼此間隔約90°。第六孔 577還可以繞著第四孔577的中心與第五孔568偏離約45°，如由圖所辨識。每個第五孔568可以另外地具有四個第六孔577，四個第六孔577繞著第五孔568的中心以彼此間隔約90°位於第五孔568的周圍，如由圖所辨識。也可以將該等孔視為基於第四孔567和第五孔568的孔之列。如第5B圖所示，第四孔567或第五孔568的每個水平列以各列的第四或第五孔與第六孔577交錯。該等列在交替的列中額外位移一個孔，使得每一個第四或第五孔在每個交替的列中具有位在上方或下方的第六孔。
如第5C圖所圖示，第四孔567可以具有四個或更多的位在每個第四孔567周圍的第五孔568。第六孔568可以與第四孔567位於交錯的行中。此外，6個第六孔577也可以被定位在每個第四孔567周圍。在此配置中，第五孔568可以位於第四孔567周圍，並且第五孔的中心繞著第四孔567的中心彼此間隔約60°，如由圖所辨識。同樣地，第六孔577可以位於第四孔周圍，並且第六孔的中心第四孔577的中心彼此間隔約60°，如由圖所辨識。第六孔577還可以繞著第四孔577的中心與第五孔568偏離約30°，如由圖所辨識。第五孔568可以位於與每個第四孔567的中心相距第一徑向距離。此外，第六孔577可以位於與每個第四孔567的中心相距第二徑向距離。如第5C圖所圖示，第二徑向距離可以小於第一徑向距離。其他揭示的實施例可以具有大於第一徑向距離的第二徑向距離。可以再次考慮該等孔為第四或第五孔的交錯水平孔列。如圖式中所示，每個第四或第五孔與同列中的下一 個第四或第五孔間隔兩個第六孔。可以將孔列偏離，使得每一列位移一半的任兩個第四或第五孔之間的距離，使得每個其他的孔列係就第六孔577而對齊。
在前面的描述中，為了解釋的目的，已經提出許多細節，以提供對本發明的各種實施例的瞭解。然而，本技術領域中具有通常知識者顯而易見的是，可以在沒有部分的這些細節或具有另外的細節之情況下實施某些實施例。
有了揭示的幾個實施例，在本技術領域中具有通常知識者將理解到，可以在不偏離揭示的實施例之精神下使用各種修改、替代結構以及均等物。此外，並未描述數個習知的製程及元件，以避免不必要地混淆本發明。因此，不應將以上描述視為限制本發明之範圍。
當提供數值的範圍時，應瞭解到，除非內文以其他方式清楚指明，否則在該範圍的上限與下限之間、每個到下限單位的最小分率之中間值亦為具體揭示的。在陳述範圍中的任何陳述值或中間值與該陳述範圍中的任何其他陳述值或中間值之間的每個較小範圍亦被涵括。該等較小範圍的上限與下限可獨立地被包括或排除於該範圍中，而且不論是該等較小範圍包括任一限值、不包括二限值或是包括二限值，該等較小範圍中的每個範圍亦被涵括於本發明中，取決於該陳述範圍中任何經具體排除的限值。當該陳述範圍包括該等限值中之一者或二者時，排除該等包括的限值中之任一者或二者的範圍亦被包括。
除非內文以其他方式清楚指明，否則本文中與所附 申請專利範圍中使用的單數形「一」及「該」包括複數的指示對象。因此，舉例來說，提及「一孔」包括複數個該種孔，而提及「該板材」包括提及一或更多個板材及其為本技術領域中具有通常知識者所習知的均等物，以此類推。
同樣地，當用於本說明書中及以下申請專利範圍中時，字眼「包含」、「含有」及「包括」意欲指明陳述的特徵、整數、組件或步驟之存在，但該等字眼並不排除一或多個其他的特徵、整數、組件、步驟、動作或群組的存在或加入。
200A‧‧‧製程腔室部分
201‧‧‧遠端電漿系統
205‧‧‧氣體入口組合件
206‧‧‧第一通道
207‧‧‧第二通道
215‧‧‧第一電漿區域
217‧‧‧面板材
220‧‧‧絕緣環
225‧‧‧噴灑頭
233‧‧‧處理區域
255‧‧‧基板
265‧‧‧基板支座

Claims (23)

  1. 一種氣體分配組合件，包含：一環形主體，包含：位於一內徑的一內環形壁、位於一外徑的一外環形壁、一上表面及一下表面；形成在該上表面中的一第一上凹部；在該內環形壁形成在該下表面中的一第一下凹部；在該第一下凹部下方並從該第一下凹部徑向往外形成在該下表面中的一第二下凹部；界定於該上表面中的一第一流體通道，該第一流體通道從該第一上凹部徑向往內位於該環形主體中；一上板材，在該第一上凹部與該環形主體耦接並覆蓋該第一流體通道，其中該上板材界定複數個第一孔；以及一下板材，在該第一下凹部與該環形主體耦接，包含：界定於該下板材中的複數個第二孔，其中該第二孔與界定於該上板材中的第一孔對齊；界定於該下板材中並位於該第二孔之間的複數個第三孔；其中該上板材和該下板材彼此耦接，使得該第一孔與該第二孔對齊而形成一通道，該通道穿過該上板材和該下板材。
  2. 如請求項1所述之氣體分配組合件，其中該上板材和該下板材係黏合在一起。
  3. 如請求項1所述之氣體分配組合件，進一步包含界定在該上表面中的一第二流體通道，該第二流體通道從該第一流體通道徑向往外位於該環形主體中，其中複數個通口被界定在界定該第一流體通道之一外壁和該第二流體通道之一內壁的一部分該環形主體中。
  4. 如請求項3所述之氣體分配組合件，其中該第二流體通道係位於該上凹部徑向往外，使得該第二流體通道未被該上板材覆蓋。
  5. 如請求項4所述之氣體分配組合件，其中一第二上凹部被該環形主體界定於該第二流體通道之頂部附近並在該內壁和一外壁中，以及其中該氣體分配組合件進一步包含一環形構件，該環形構件位於該第二上凹部內，以便覆蓋該第二流體通道。
  6. 如請求項3所述之氣體分配組合件，其中該上凹部包含與該第一流體通道之該外壁相交的一底部部分。
  7. 如請求項3所述之氣體分配組合件，進一步包含一對隔離通道，其中該對隔離通道中之一者係被界定於該環形主體之該上表面中，並且該對隔離通道中之另一者係被界定於該環形主體之該下表面中，以及其中該對隔離通道彼此垂直對齊。
  8. 如請求項3所述之氣體分配組合件，其中該第二流體通道係位於從該上凹部徑向往內，使得該第二流體通道被該上板材覆蓋。
  9. 如請求項8所述之氣體分配組合件，其中一部分的該上板材延伸進入該第二通道到該上凹部之一底部下方。
  10. 如請求項9所述之氣體分配組合件，其中該複數個通口從該第二流體通道往該第一流體通道向上成一角度，使得該通口在延伸進入該第二通道的該部分上板材下方可流體連通。
  11. 如請求項8所述之氣體分配組合件，進一步包含一對隔離通道，其中該對隔離通道中之一者係在從該上凹部徑向往內的一位置被界定於該上板材中，並且該對隔離通道中之另一者係被界定於該環形主體之該下表面中，以及其中該對隔離通道彼此垂直對齊。
  12. 如請求項1所述之氣體分配組合件，進一步包含界定於該環形主體中的一環形溫度通道，該環形溫度通道設以接收一冷卻流體，可操作該冷卻流體來保持該環形主體之一溫度。
  13. 如請求項1所述之氣體分配組合件，進一步包含界定於 該環形主體中的一環形溫度通道，該環形溫度通道設以接收一加熱元件，該加熱元件位於該通道內，並可操作該加熱元件來保持該環形主體之一溫度。
  14. 一種氣體分配組合件，包含：一環形主體，包含：位於一內徑的一內環形壁、位於一外徑的一外環形壁、一上表面及一下表面；形成在該上表面中的一上凹部；形成在該下表面中的一下凹部；界定於該下表面中的一第一流體通道，該第一流體通道從該下凹部徑向往內位於該環形主體中；一上板材，在該上凹部與該環形主體耦接，其中該上板材界定複數個第一孔；以及一下板材，在該下凹部與該環形主體耦接並覆蓋該第一流體通道，該下板材包含：界定於該下板材中的複數個第二孔，其中該第二孔與界定於該上板材中的第一孔對齊；界定於該下板材中並位於該第二孔之間的複數個第三孔；其中該上板材和該下板材彼此耦接，使得該第一孔與該第二孔對齊而形成一通道，該通道穿過該上板材和該下板材。
  15. 如請求項14所述之氣體分配組合件，進一步包含界定在 該下表面中的一第二流體通道，該第二流體通道從該第一流體通道徑向往外位於該環形主體中，其中複數個通口被界定在界定該第一流體通道之一外壁和該第二流體通道之一內壁的一部分該環形主體中，其中該複數個通口設以流體耦接該第二流體通道與該第一流體通道。
  16. 如請求項15所述之氣體分配組合件，其中該第二流體通道係位於該下凹部徑向往內，使得該第二流體通道被該下板材覆蓋，以及其中一部分該下板材延伸進入該第二通道至該下凹部之一頂部上方。
  17. 如請求項16所述之氣體分配組合件，其中該複數個通口從該第二流體通道往該第一流體通道向下成一角度，使得該通口在延伸進入該第二通道的該部分下板材上方可流體連通。
  18. 如請求項14所述之氣體分配組合件，其中當該第一孔延伸通過該上板材時，該第一孔包含一直徑減小的錐形形狀，以及其中當該第二孔和該第三孔延伸通過該下板材時，該第二孔和該第三孔包含一直徑增加的錐形形狀。
  19. 如請求項14所述之氣體分配組合件，其中每個該第二孔和該第三孔包含至少三個形狀或直徑不同的部分。
  20. 一種氣體分配組合件，包含：一環形主體，包含：位於一內徑的一內環形壁、位於一外徑的一外環形壁、一上表面及一下表面；一上板材，與該環形主體耦接，其中該上板材界定複數個第一孔；一中間板材，與該上板材耦接，其中該中間板材界定複數個第二孔和第三孔，以及其中該第二孔與該上板材之該第一孔對齊；以及一下板材，與該環形主體和該中間板材耦接，包含：界定於該下板材中的複數個第四孔，該第四孔與該上板材之該第一孔及該中間板材之該第二孔對齊，以形成通過該等板材的一第一組流體通道；界定於該下板材中的複數個第五孔，該第五孔與該中間板材之該第三孔對齊，以形成通過該中間板材和該下板材的一第二組流體通道，其中該第二組流體通道係與該第一組流體通道流體隔離，及界定於該下板材中的複數個第六孔，該第六孔形成通過該下板材的一第三組流體通道，其中該第三組流體通道係與該第一和第二組流體通道流體隔離。
  21. 如請求項20所述之氣體分配組合件，其中該下板材包括的該第四、第五及第六孔之一方位使得大部分的該第四孔每個皆被至少四個該第五孔和四個該第六孔包圍。
  22. 如請求項21所述之氣體分配組合件，其中該第五孔係位於該第四孔周圍，並且該第五孔之中心關於該第四孔之一中心彼此間隔約90°，以及其中該第六孔係位於該第四孔周圍，並且該第六孔之中心關於該第四孔之該中心彼此間隔約90°，並從該第五孔偏離約45°。
  23. 如請求項21所述之氣體分配組合件，其中該第五孔係位於該第四孔周圍，並且該第五孔之中心關於該第四孔之一中心彼此間隔約60°，以及其中該第六孔係位於該第四孔周圍，並且該第六孔之中心關於該第四孔之該中心彼此間隔約60°，並從該第五孔偏離約30°。
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Families Citing this family (168)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5253511B2 (ja) * 2007-10-24 2013-07-31 オーツェー・エリコン・バルザース・アーゲー ワークピース製造方法及び装置
WO2011009002A2 (en) * 2009-07-15 2011-01-20 Applied Materials, Inc. Flow control features of cvd chambers
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) * 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US10407771B2 (en) 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US11384432B2 (en) * 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
US10023959B2 (en) * 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
KR102638572B1 (ko) 2015-06-17 2024-02-21 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버 내의 가스 제어
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) * 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
JP6430664B2 (ja) * 2016-01-06 2018-11-28 東芝三菱電機産業システム株式会社 ガス供給装置
TWI677593B (zh) * 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10872760B2 (en) * 2016-07-26 2020-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and manufacuturing method of semiconductor structure using the same
WO2018106627A1 (en) * 2016-12-08 2018-06-14 Applied Materials, Inc. Temporal atomic layer deposition processing chamber
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) * 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
JP6764771B2 (ja) * 2016-11-28 2020-10-07 東京エレクトロン株式会社 基板処理装置及び遮熱板
KR102410571B1 (ko) 2016-12-09 2022-06-22 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10604841B2 (en) * 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
EP3379416B1 (en) * 2017-03-24 2023-06-14 Nxp B.V. Memory system
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
CN107326341B (zh) * 2017-07-14 2019-10-25 君泰创新（北京）科技有限公司 Lpcvd工艺腔匀气装置
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US11124878B2 (en) 2017-07-31 2021-09-21 Applied Materials, Inc. Gas supply member with baffle
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
WO2019113478A1 (en) * 2017-12-08 2019-06-13 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
GB2591630B (en) 2018-07-26 2023-05-24 Sigray Inc High brightness x-ray reflection source
US11056308B2 (en) 2018-09-07 2021-07-06 Sigray, Inc. System and method for depth-selectable x-ray analysis
CN112673456A (zh) * 2018-09-10 2021-04-16 朗姆研究公司 使用亚稳的活化自由基物质的原子层处理工艺
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US20200087788A1 (en) * 2018-09-17 2020-03-19 Applied Materials, Inc. Multiple channel showerheads
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
CN111101117B (zh) * 2018-10-29 2022-07-22 北京北方华创微电子装备有限公司 匀气装置和半导体处理设备
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) * 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
JP2021019201A (ja) 2019-07-18 2021-02-15 エーエスエム アイピー ホールディング ビー．ブイ． 半導体処理システム用シャワーヘッドデバイス
CN114729907B (zh) 2019-09-03 2023-05-23 斯格瑞公司 用于计算机层析x射线荧光成像的系统和方法
US11387071B2 (en) 2019-10-06 2022-07-12 Applied Materials, Inc. Multi-source ion beam etch system
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
US11175243B1 (en) 2020-02-06 2021-11-16 Sigray, Inc. X-ray dark-field in-line inspection for semiconductor samples
US20210331183A1 (en) * 2020-04-24 2021-10-28 Applied Materials, Inc. Fasteners for coupling components of showerhead assemblies
CN115667896B (zh) 2020-05-18 2024-06-21 斯格瑞公司 使用晶体分析器和多个检测元件的x射线吸收光谱的系统和方法
US11242600B2 (en) * 2020-06-17 2022-02-08 Applied Materials, Inc. High temperature face plate for deposition application
US20220010431A1 (en) * 2020-07-08 2022-01-13 Applied Materials, Inc. Multiple-channel showerhead design and methods in manufacturing
JP2023542674A (ja) 2020-09-17 2023-10-11 シグレイ、インコーポレイテッド Ｘ線を用いた深さ分解計測および分析のためのシステムおよび方法
US11686692B2 (en) 2020-12-07 2023-06-27 Sigray, Inc. High throughput 3D x-ray imaging system using a transmission x-ray source
US11742185B2 (en) * 2021-03-26 2023-08-29 Applied Materials, Inc. Uniform in situ cleaning and deposition
KR102623814B1 (ko) 2021-12-27 2024-01-10 세메스 주식회사 기판 처리 장치와 이를 포함하는 기판 접합 시스템 및 이를 이용한 기판 처리 방법
KR102494936B1 (ko) * 2021-12-30 2023-02-06 세메스 주식회사 기판 처리 장치와 이를 포함하는 기판 접합 시스템 및 이를 이용한 기판 처리 방법

Family Cites Families (2213)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2369620A (en) 1941-03-07 1945-02-13 Battelle Development Corp Method of coating cupreous metal with tin
US3451840A (en) 1965-10-06 1969-06-24 Us Air Force Wire coated with boron nitride and boron
US3401302A (en) 1965-11-01 1968-09-10 Humphreys Corp Induction plasma generator including cooling means, gas flow means, and operating means therefor
US3537474A (en) 1968-02-19 1970-11-03 Varian Associates Push button vacuum control valve and vacuum system using same
US3756511A (en) 1971-02-02 1973-09-04 Kogyo Kaihatsu Kenyusho Nozzle and torch for plasma jet
US3969077A (en) 1971-12-16 1976-07-13 Varian Associates Alkali metal leak detection method and apparatus
US4632857A (en) 1974-05-24 1986-12-30 Richardson Chemical Company Electrolessly plated product having a polymetallic catalytic film underlayer
US4232060A (en) 1979-01-22 1980-11-04 Richardson Chemical Company Method of preparing substrate surface for electroless plating and products produced thereby
US4397812A (en) 1974-05-24 1983-08-09 Richardson Chemical Company Electroless nickel polyalloys
US4006047A (en) 1974-07-22 1977-02-01 Amp Incorporated Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates
US3937857A (en) 1974-07-22 1976-02-10 Amp Incorporated Catalyst for electroless deposition of metals
US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4190488A (en) 1978-08-21 1980-02-26 International Business Machines Corporation Etching method using noble gas halides
US4265943A (en) 1978-11-27 1981-05-05 Macdermid Incorporated Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions
US4234628A (en) 1978-11-28 1980-11-18 The Harshaw Chemical Company Two-step preplate system for polymeric surfaces
US4214946A (en) 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4361441A (en) 1979-04-17 1982-11-30 Plasma Holdings N.V. Treatment of matter in low temperature plasmas
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
IT1130955B (it) 1980-03-11 1986-06-18 Oronzio De Nora Impianti Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti
US4361418A (en) 1980-05-06 1982-11-30 Risdon Corporation High vacuum processing system having improved recycle draw-down capability under high humidity ambient atmospheric conditions
NL8004005A (nl) 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4381441A (en) 1980-10-30 1983-04-26 Western Electric Company, Inc. Methods of and apparatus for trimming film resistors
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
CH640571A5 (fr) * 1981-03-06 1984-01-13 Battelle Memorial Institute Procede et dispositif pour deposer sur un substrat une couche de matiere minerale.
US4368223A (en) 1981-06-01 1983-01-11 Asahi Glass Company, Ltd. Process for preparing nickel layer
DE3205345A1 (de) 1982-02-15 1983-09-01 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung von fluordotierten lichtleitfasern"
US4585920A (en) 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
JPS591671A (ja) 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS59126778A (ja) 1983-01-11 1984-07-21 Tokyo Denshi Kagaku Kabushiki プラズマエツチング方法及びその装置
JPS59222922A (ja) 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
DE3324388A1 (de) 1983-07-06 1985-01-17 Kraftwerk Union AG, 4330 Mülheim Verfahren und anlage zur wiederaufwaermung von rauchgasen hinter einer nassen rauchgasentschwefelungsanlage
JPS6060060A (ja) 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4656052A (en) 1984-02-13 1987-04-07 Kyocera Corporation Process for production of high-hardness boron nitride film
US4571819A (en) 1984-11-01 1986-02-25 Ncr Corporation Method for forming trench isolation structures
US4656076A (en) 1985-04-26 1987-04-07 Triquint Semiconductors, Inc. Self-aligned recessed gate process
US4600464A (en) 1985-05-01 1986-07-15 International Business Machines Corporation Plasma etching reactor with reduced plasma potential
JPS61276977A (ja) 1985-05-30 1986-12-06 Canon Inc 堆積膜形成法
US4807016A (en) 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
US4714520A (en) 1985-07-25 1987-12-22 Advanced Micro Devices, Inc. Method for filling a trench in an integrated circuit structure without producing voids
US4610775A (en) 1985-07-26 1986-09-09 Westinghouse Electric Corp. Method and apparatus for clearing short-circuited, high-voltage cathodes in a sputtering chamber
JPS6245119A (ja) 1985-08-23 1987-02-27 Matsushita Electric Ind Co Ltd ドライエツチング装置
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4668335A (en) 1985-08-30 1987-05-26 Advanced Micro Devices, Inc. Anti-corrosion treatment for patterning of metallic layers
US4690746A (en) 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4715937A (en) 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US5228501A (en) 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
US4872947A (en) 1986-12-19 1989-10-10 Applied Materials, Inc. CVD of silicon oxide using TEOS decomposition and in-situ planarization process
US4892753A (en) 1986-12-19 1990-01-09 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
JPS63204726A (ja) 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
US4868071A (en) 1987-02-24 1989-09-19 Polyonics Corporation Thermally stable dual metal coated laminate products made from textured polyimide film
US5322976A (en) 1987-02-24 1994-06-21 Polyonics Corporation Process for forming polyimide-metal laminates
DE3856483T2 (de) 1987-03-18 2002-04-18 Kabushiki Kaisha Toshiba, Kawasaki Verfahren zur Herstellung von Dünnschichten
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4786360A (en) 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
DE3884653T2 (de) 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
US4913929A (en) 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
JP2598019B2 (ja) 1987-06-01 1997-04-09 富士通株式会社 感光体の製造方法
US4753898A (en) 1987-07-09 1988-06-28 Motorola, Inc. LDD CMOS process
US4820377A (en) 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4857140A (en) 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4867841A (en) 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
US4904621A (en) 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4886570A (en) 1987-07-16 1989-12-12 Texas Instruments Incorporated Processing apparatus and method
US4838990A (en) 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4828649A (en) 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
US4878994A (en) 1987-07-16 1989-11-07 Texas Instruments Incorporated Method for etching titanium nitride local interconnects
JPS6432627A (en) 1987-07-29 1989-02-02 Hitachi Ltd Low-temperature dry etching method
US4919750A (en) 1987-09-14 1990-04-24 International Business Machines Corporation Etching metal films with complexing chloride plasma
US4810520A (en) 1987-09-23 1989-03-07 Magnetic Peripherals Inc. Method for controlling electroless magnetic plating
US5180435A (en) 1987-09-24 1993-01-19 Research Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer
WO1989003587A1 (en) 1987-10-14 1989-04-20 The Furukawa Electric Co., Ltd. Method and apparatus for thin film formation by plasma cvd
US4865685A (en) 1987-11-03 1989-09-12 North Carolina State University Dry etching of silicon carbide
US4981551A (en) 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US4851370A (en) 1987-12-28 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Fabricating a semiconductor device with low defect density oxide
JP2804037B2 (ja) 1988-02-05 1998-09-24 株式会社東芝 ドライエッチング方法
JPH01297141A (ja) 1988-05-25 1989-11-30 Canon Inc マイクロ波プラズマ処理装置
US4900856A (en) 1988-05-26 1990-02-13 Ethyl Corporation Preparation of metal halide-amine complexes
JPH029115A (ja) 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
US4904341A (en) 1988-08-22 1990-02-27 Westinghouse Electric Corp. Selective silicon dioxide etchant for superconductor integrated circuits
JPH02114525A (ja) 1988-10-24 1990-04-26 Toshiba Corp 有機化合物膜の除去方法及び除去装置
JPH02114530A (ja) 1988-10-25 1990-04-26 Mitsubishi Electric Corp 薄膜形成装置
US4894352A (en) 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
KR930004115B1 (ko) 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
JP2981243B2 (ja) 1988-12-27 1999-11-22 株式会社東芝 表面処理方法
EP0376252B1 (en) 1988-12-27 1997-10-22 Kabushiki Kaisha Toshiba Method of removing an oxide film on a substrate
US4985372A (en) 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
IT216961Z2 (it) 1989-03-07 1991-10-21 Roltra Spa Dispositivo attuatore per bloccaserratura elettrico
JPH02121330U (zh) 1989-03-15 1990-10-02
JP2823276B2 (ja) 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
US4946903A (en) 1989-03-27 1990-08-07 The Research Foundation Of State University Of Ny Oxyfluoropolymers having chemically reactive surface functionality and increased surface energies
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5270125A (en) 1989-07-11 1993-12-14 Redwood Microsystems, Inc. Boron nutride membrane in wafer structure
US4993358A (en) 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
US4994404A (en) 1989-08-28 1991-02-19 Motorola, Inc. Method for forming a lightly-doped drain (LDD) structure in a semiconductor device
US4980018A (en) 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
EP0447155B1 (en) 1990-03-12 1995-07-26 Ngk Insulators, Ltd. Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters
JP2960466B2 (ja) 1990-03-19 1999-10-06 株式会社日立製作所 半導体デバイスの配線絶縁膜の形成方法及びその装置
US5089441A (en) 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5147692A (en) 1990-05-08 1992-09-15 Macdermid, Incorporated Electroless plating of nickel onto surfaces such as copper or fused tungston
US5069938A (en) 1990-06-07 1991-12-03 Applied Materials, Inc. Method of forming a corrosion-resistant protective coating on aluminum substrate
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5083030A (en) 1990-07-18 1992-01-21 Applied Photonics Research Double-sided radiation-assisted processing apparatus
JPH04228572A (ja) 1990-08-10 1992-08-18 Sumitomo Electric Ind Ltd 硬質窒化ホウ素合成法
US5235139A (en) 1990-09-12 1993-08-10 Macdermid, Incorprated Method for fabricating printed circuits
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5089442A (en) 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
DE69116058T2 (de) 1990-09-27 1996-08-22 At & T Corp Verfahren zur Herstellung integrierter Schaltungen
JPH04142738A (ja) 1990-10-04 1992-05-15 Sony Corp ドライエッチング方法
JPH04355917A (ja) 1990-10-12 1992-12-09 Seiko Epson Corp 半導体装置の製造装置
JPH0817171B2 (ja) 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
US5549780A (en) 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
JP2640174B2 (ja) 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
JP3206916B2 (ja) 1990-11-28 2001-09-10 住友電気工業株式会社 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス
US5279705A (en) 1990-11-28 1994-01-18 Dainippon Screen Mfg. Co., Ltd. Gaseous process for selectively removing silicon nitride film
US5217559A (en) 1990-12-10 1993-06-08 Texas Instruments Incorporated Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing
US5578130A (en) 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
EP0519079B1 (en) 1991-01-08 1999-03-03 Fujitsu Limited Process for forming silicon oxide film
JPH04239723A (ja) 1991-01-23 1992-08-27 Nec Corp 半導体装置の製造方法
JP2697315B2 (ja) 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JP2787142B2 (ja) 1991-03-01 1998-08-13 上村工業 株式会社 無電解錫、鉛又はそれらの合金めっき方法
DE4107006A1 (de) 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5897751A (en) 1991-03-11 1999-04-27 Regents Of The University Of California Method of fabricating boron containing coatings
US5330578A (en) 1991-03-12 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus
US5290383A (en) 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
JPH05508266A (ja) 1991-04-03 1993-11-18 イーストマン・コダック・カンパニー ＧａＡｓをドライエッチングするための高耐久性マスク
EP0511448A1 (en) 1991-04-30 1992-11-04 International Business Machines Corporation Method and apparatus for in-situ and on-line monitoring of a trench formation process
JPH04341568A (ja) 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
DE69224640T2 (de) 1991-05-17 1998-10-01 Lam Res Corp VERFAHREN ZUR BESCHICHTUNG EINES SIOx FILMES MIT REDUZIERTER INTRINSISCHER SPANNUNG UND/ODER REDUZIERTEM WASSERSTOFFGEHALT
CA2068623A1 (en) 1991-05-28 1992-11-29 David Wilson Jr. Socket and drive assembly
JP2699695B2 (ja) 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
US5203911A (en) 1991-06-24 1993-04-20 Shipley Company Inc. Controlled electroless plating
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5279865A (en) 1991-06-28 1994-01-18 Digital Equipment Corporation High throughput interlevel dielectric gap filling process
JPH0521393A (ja) 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
JPH0562936A (ja) 1991-09-03 1993-03-12 Mitsubishi Electric Corp プラズマ処理装置およびプラズマクリーニング方法
US5240497A (en) 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
US5318668A (en) 1991-10-24 1994-06-07 Matsushita Electric Industrial Co., Ltd. Dry etching method
JPH05226480A (ja) 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5352636A (en) 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5300463A (en) 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
JP3084497B2 (ja) 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2773530B2 (ja) 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
JP2792335B2 (ja) 1992-05-27 1998-09-03 日本電気株式会社 半導体装置の製造方法
US5274917A (en) 1992-06-08 1994-01-04 The Whitaker Corporation Method of making connector with monolithic multi-contact array
US5880036A (en) 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
KR100293830B1 (ko) 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
US5286297A (en) 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JP3688726B2 (ja) 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
US5380560A (en) 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5292370A (en) 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5271972A (en) 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP2809018B2 (ja) 1992-11-26 1998-10-08 日本電気株式会社 半導体装置およびその製造方法
KR100238629B1 (ko) 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5500249A (en) 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5756402A (en) 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5624582A (en) 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5345999A (en) 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5302233A (en) 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5800686A (en) 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JP2664866B2 (ja) 1993-04-09 1997-10-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 窒化ホウ素をエッチングする方法
US5416048A (en) 1993-04-16 1995-05-16 Micron Semiconductor, Inc. Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage
EP0628644B1 (en) 1993-05-27 2003-04-02 Applied Materials, Inc. Improvements in or relating to susceptors suitable for use in chemical vapour deposition devices
US5591269A (en) 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
US5292682A (en) 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US5413670A (en) 1993-07-08 1995-05-09 Air Products And Chemicals, Inc. Method for plasma etching or cleaning with diluted NF3
US5560779A (en) 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
WO1995002900A1 (en) 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
EP0637063B1 (en) 1993-07-30 1999-11-03 Applied Materials, Inc. Method for depositing silicon nitride on silicium surfaces
US5483920A (en) 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
US5685946A (en) 1993-08-11 1997-11-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5468597A (en) 1993-08-25 1995-11-21 Shipley Company, L.L.C. Selective metallization process
US5865896A (en) 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5384284A (en) 1993-10-01 1995-01-24 Micron Semiconductor, Inc. Method to form a low resistant bond pad interconnect
SE501888C2 (sv) 1993-10-18 1995-06-12 Ladislav Bardos En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden
JPH07130713A (ja) 1993-11-04 1995-05-19 Fujitsu Ltd ダウンフローエッチング装置
JPH07161703A (ja) 1993-12-03 1995-06-23 Ricoh Co Ltd 半導体装置の製造方法
US5505816A (en) 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
JPH07193214A (ja) 1993-12-27 1995-07-28 Mitsubishi Electric Corp バイアホール及びその形成方法
US5415890A (en) 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5403434A (en) 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
JP3188363B2 (ja) 1994-01-21 2001-07-16 エフエスアイ・インターナショナル・インコーポレーテッド 循環クーラントを用いた温度コントローラ及びそのための温度制御方法
US5399237A (en) 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
US5451259A (en) 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5454170A (en) 1994-03-02 1995-10-03 Vlsi Technology Inc. Robot to pedestal alignment head
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
DE69531880T2 (de) 1994-04-28 2004-09-09 Applied Materials, Inc., Santa Clara Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung
US5468342A (en) 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US6110838A (en) 1994-04-29 2000-08-29 Texas Instruments Incorporated Isotropic polysilicon plus nitride stripping
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5580421A (en) 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5767373A (en) 1994-06-16 1998-06-16 Novartis Finance Corporation Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms
US5580385A (en) 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
JP3501524B2 (ja) 1994-07-01 2004-03-02 東京エレクトロン株式会社 処理装置の真空排気システム
JP3411678B2 (ja) 1994-07-08 2003-06-03 東京エレクトロン株式会社 処理装置
US5592358A (en) 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
EP0697467A1 (en) 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
JP3468859B2 (ja) * 1994-08-16 2003-11-17 富士通株式会社 気相処理装置及び気相処理方法
US5563105A (en) 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
JPH08107101A (ja) 1994-10-03 1996-04-23 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
US5597439A (en) 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
JPH08148470A (ja) 1994-11-21 1996-06-07 Sanyo Electric Co Ltd 半導体装置の製造方法
TW344897B (en) 1994-11-30 1998-11-11 At&T Tcorporation A process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
CN1053764C (zh) 1994-12-09 2000-06-21 中国科学院微电子中心 束致变蚀方法
US5605637A (en) 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
EP0795048B1 (en) 1994-12-19 2000-03-15 Alcan International Limited Cleaning aluminium workpieces
US5792376A (en) 1995-01-06 1998-08-11 Kabushiki Kaisha Toshiba Plasma processing apparatus and plasma processing method
US5772770A (en) 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JPH08279495A (ja) 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
US5571576A (en) 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6039851A (en) 1995-03-22 2000-03-21 Micron Technology, Inc. Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
US5556521A (en) 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
JPH08264510A (ja) 1995-03-27 1996-10-11 Toshiba Corp シリコン窒化膜のエッチング方法およびエッチング装置
US5571577A (en) 1995-04-07 1996-11-05 Board Of Trustees Operating Michigan State University Method and apparatus for plasma treatment of a surface
JP3270852B2 (ja) 1995-04-20 2002-04-02 東京エレクトロン株式会社 圧力調整装置及びこれを用いた部屋の連通方法
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JP3386287B2 (ja) 1995-05-08 2003-03-17 堀池 靖浩 プラズマエッチング装置
US20010028922A1 (en) 1995-06-07 2001-10-11 Sandhu Gurtej S. High throughput ILD fill process for high aspect ratio gap fill
TW434745B (en) 1995-06-07 2001-05-16 Tokyo Electron Ltd Plasma processing apparatus
JP3599204B2 (ja) 1995-06-08 2004-12-08 アネルバ株式会社 Ｃｖｄ装置
JP2814370B2 (ja) 1995-06-18 1998-10-22 東京エレクトロン株式会社 プラズマ処理装置
US5997962A (en) 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
US5968379A (en) 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US6022446A (en) 1995-08-21 2000-02-08 Shan; Hongching Shallow magnetic fields for generating circulating electrons to enhance plasma processing
US6197364B1 (en) 1995-08-22 2001-03-06 International Business Machines Corporation Production of electroless Co(P) with designed coercivity
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
US6053982A (en) 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US6228751B1 (en) 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5719085A (en) 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
US5716506A (en) 1995-10-06 1998-02-10 Board Of Trustees Of The University Of Illinois Electrochemical sensors for gas detection
JPH09106898A (ja) 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
US5635086A (en) 1995-10-10 1997-06-03 The Esab Group, Inc. Laser-plasma arc metal cutting apparatus
JPH09106899A (ja) 1995-10-11 1997-04-22 Anelva Corp プラズマｃｖｄ装置及び方法並びにドライエッチング装置及び方法
US5814238A (en) 1995-10-12 1998-09-29 Sandia Corporation Method for dry etching of transition metals
US5910340A (en) 1995-10-23 1999-06-08 C. Uyemura & Co., Ltd. Electroless nickel plating solution and method
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
US5599740A (en) 1995-11-16 1997-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Deposit-etch-deposit ozone/teos insulator layer method
US5648125A (en) 1995-11-16 1997-07-15 Cane; Frank N. Electroless plating process for the manufacture of printed circuit boards
JP4420986B2 (ja) 1995-11-21 2010-02-24 株式会社東芝 シャロウ・トレンチ分離半導体基板及びその製造方法
US5846598A (en) 1995-11-30 1998-12-08 International Business Machines Corporation Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating
JPH09153481A (ja) 1995-11-30 1997-06-10 Sumitomo Metal Ind Ltd プラズマ処理装置
US5756400A (en) 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5733816A (en) 1995-12-13 1998-03-31 Micron Technology, Inc. Method for depositing a tungsten layer on silicon
US6261637B1 (en) 1995-12-15 2001-07-17 Enthone-Omi, Inc. Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication
EP0811083B1 (en) 1995-12-19 2000-05-31 FSI International Electroless deposition of metal films with spray processor
US5883012A (en) 1995-12-21 1999-03-16 Motorola, Inc. Method of etching a trench into a semiconductor substrate
US5679606A (en) 1995-12-27 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. method of forming inter-metal-dielectric structure
DE69623651T2 (de) 1995-12-27 2003-04-24 Lam Research Corp., Fremont Verfahren zur füllung von gräben auf einer halbleiterscheibe
WO1997024760A1 (fr) 1995-12-28 1997-07-10 Nippon Sanso Corporation Procede et dispositif de transfert de substrats en plaques minces
US6191026B1 (en) 1996-01-09 2001-02-20 Applied Materials, Inc. Method for submicron gap filling on a semiconductor substrate
US5891513A (en) 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US5674787A (en) 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US5824599A (en) 1996-01-16 1998-10-20 Cornell Research Foundation, Inc. Protected encapsulation of catalytic layer for electroless copper interconnect
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US5872052A (en) 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
US5648175A (en) 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US6004884A (en) 1996-02-15 1999-12-21 Lam Research Corporation Methods and apparatus for etching semiconductor wafers
US6200412B1 (en) 1996-02-16 2001-03-13 Novellus Systems, Inc. Chemical vapor deposition system including dedicated cleaning gas injection
TW335517B (en) 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
JPH09260356A (ja) 1996-03-22 1997-10-03 Toshiba Corp ドライエッチング方法
US6065425A (en) 1996-03-25 2000-05-23 Canon Kabushiki Kaisha Plasma process apparatus and plasma process method
DE69739101D1 (de) 1996-03-25 2008-12-24 S George Lesinski Microantriebsbefestigung für implantierbares hörhilfegerät
US5858876A (en) 1996-04-01 1999-01-12 Chartered Semiconductor Manufacturing, Ltd. Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer
US5712185A (en) 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US5843847A (en) 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
KR100230981B1 (ko) 1996-05-08 1999-11-15 김광호 반도체장치 제조공정의 플라즈마 식각 방법
US5660957A (en) 1996-05-16 1997-08-26 Fujitsu Limited Electron-beam treatment procedure for patterned mask layers
US6313035B1 (en) 1996-05-31 2001-11-06 Micron Technology, Inc. Chemical vapor deposition using organometallic precursors
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US6048798A (en) 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
TW409152B (en) 1996-06-13 2000-10-21 Samsung Electronic Etching gas composition for ferroelectric capacitor electrode film and method for etching a transition metal thin film
US5846373A (en) 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
US5885358A (en) 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5846883A (en) * 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US6209480B1 (en) 1996-07-10 2001-04-03 Mehrdad M. Moslehi Hermetically-sealed inductively-coupled plasma source structure and method of use
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5868897A (en) 1996-07-31 1999-02-09 Toyo Technologies, Inc. Device and method for processing a plasma to alter the surface of a substrate using neutrals
US20010012700A1 (en) 1998-12-15 2001-08-09 Klaus F. Schuegraf Semiconductor processing methods of chemical vapor depositing sio2 on a substrate
JPH1079372A (ja) 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US5661093A (en) 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
US5747373A (en) 1996-09-24 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd. Nitride-oxide sidewall spacer for salicide formation
US5846375A (en) 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US5904827A (en) 1996-10-15 1999-05-18 Reynolds Tech Fabricators, Inc. Plating cell with rotary wiper and megasonic transducer
US6308654B1 (en) 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US5951776A (en) 1996-10-25 1999-09-14 Applied Materials, Inc. Self aligning lift mechanism
KR100237825B1 (ko) 1996-11-05 2000-01-15 윤종용 반도체장치 제조설비의 페디스탈
US5804259A (en) 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US5994209A (en) 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US5939831A (en) 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US5812403A (en) 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US6019848A (en) 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
US5963840A (en) 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US5935334A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US5968587A (en) 1996-11-13 1999-10-19 Applied Materials, Inc. Systems and methods for controlling the temperature of a vapor deposition apparatus
US5935340A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Method and apparatus for gettering fluorine from chamber material surfaces
US5873781A (en) 1996-11-14 1999-02-23 Bally Gaming International, Inc. Gaming machine having truly random results
US5882786A (en) 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating
US5844195A (en) 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US5830805A (en) 1996-11-18 1998-11-03 Cornell Research Foundation Electroless deposition equipment or apparatus and method of performing electroless deposition
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US5695810A (en) 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
FR2756663B1 (fr) 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
US5951896A (en) 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
JPH10172792A (ja) 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US6312554B1 (en) 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
US5843538A (en) 1996-12-09 1998-12-01 John L. Raymond Method for electroless nickel plating of metal substrates
DE19651646C2 (de) 1996-12-12 2002-07-11 Deutsch Zentr Luft & Raumfahrt Verfahren zum Einblasen einer ersten und zweiten Brennstoffkomponente und Einblaskopf
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5948702A (en) 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US5913140A (en) 1996-12-23 1999-06-15 Lam Research Corporation Method for reduction of plasma charging damage during chemical vapor deposition
KR100234539B1 (ko) 1996-12-24 1999-12-15 윤종용 반도체장치 제조용 식각 장치
US5788825A (en) 1996-12-30 1998-08-04 Samsung Electronics Co., Ltd. Vacuum pumping system for a sputtering device
US5955037A (en) 1996-12-31 1999-09-21 Atmi Ecosys Corporation Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
DE19700231C2 (de) 1997-01-07 2001-10-04 Geesthacht Gkss Forschung Vorrichtung zum Filtern und Trennen von Strömungsmedien
TW415970B (en) 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
US5913147A (en) 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US5882424A (en) 1997-01-21 1999-03-16 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field
JPH10223608A (ja) 1997-02-04 1998-08-21 Sony Corp 半導体装置の製造方法
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6013584A (en) 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US6190233B1 (en) 1997-02-20 2001-02-20 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
DE19706682C2 (de) 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
US5990000A (en) 1997-02-20 1999-11-23 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6479373B2 (en) 1997-02-20 2002-11-12 Infineon Technologies Ag Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
US6328803B2 (en) 1997-02-21 2001-12-11 Micron Technology, Inc. Method and apparatus for controlling rate of pressure change in a vacuum process chamber
US6059643A (en) 1997-02-21 2000-05-09 Aplex, Inc. Apparatus and method for polishing a flat surface using a belted polishing pad
US6267074B1 (en) 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
US5789300A (en) 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
KR100295518B1 (ko) 1997-02-25 2001-11-30 아끼구사 나오유끼 질화실리콘층의에칭방법및반도체장치의제조방법
US6039834A (en) 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
TW418461B (en) 1997-03-07 2001-01-11 Tokyo Electron Ltd Plasma etching device
US5850105A (en) 1997-03-21 1998-12-15 Advanced Micro Devices, Inc. Substantially planar semiconductor topography using dielectrics and chemical mechanical polish
TW376547B (en) 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6030666A (en) 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US6017414A (en) 1997-03-31 2000-01-25 Lam Research Corporation Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US5968610A (en) 1997-04-02 1999-10-19 United Microelectronics Corp. Multi-step high density plasma chemical vapor deposition process
US5866483A (en) 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6143158A (en) 1997-04-25 2000-11-07 Fuji Photo Film Co., Ltd. Method for producing an aluminum support for a lithographic printing plate
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6204200B1 (en) 1997-05-05 2001-03-20 Texas Instruments Incorporated Process scheme to form controlled airgaps between interconnect lines to reduce capacitance
US5969422A (en) 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US5838055A (en) 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US6189483B1 (en) 1997-05-29 2001-02-20 Applied Materials, Inc. Process kit
US6083344A (en) 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6136685A (en) 1997-06-03 2000-10-24 Applied Materials, Inc. High deposition rate recipe for low dielectric constant films
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US5872058A (en) 1997-06-17 1999-02-16 Novellus Systems, Inc. High aspect ratio gapfill process by using HDP
US5885749A (en) 1997-06-20 1999-03-23 Clear Logic, Inc. Method of customizing integrated circuits by selective secondary deposition of layer interconnect material
US5933757A (en) 1997-06-23 1999-08-03 Lsi Logic Corporation Etch process selective to cobalt silicide for formation of integrated circuit structures
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6518155B1 (en) 1997-06-30 2003-02-11 Intel Corporation Device structure and method for reducing silicide encroachment
US6184121B1 (en) 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
US6037273A (en) 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US5944049A (en) 1997-07-15 1999-08-31 Applied Materials, Inc. Apparatus and method for regulating a pressure in a chamber
JPH1136076A (ja) 1997-07-16 1999-02-09 Tokyo Electron Ltd Ｃｖｄ成膜装置およびｃｖｄ成膜方法
US5982100A (en) 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
JP3317209B2 (ja) * 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6007635A (en) 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US5814365A (en) 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
US5926737A (en) 1997-08-19 1999-07-20 Tokyo Electron Limited Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
US6080446A (en) * 1997-08-21 2000-06-27 Anelva Corporation Method of depositing titanium nitride thin film and CVD deposition apparatus
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6063688A (en) 1997-09-29 2000-05-16 Intel Corporation Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6364957B1 (en) 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6688375B1 (en) 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
JP3874911B2 (ja) 1997-10-15 2007-01-31 株式会社Ｎｅｏｍａｘマテリアル 微小プラスチック球へのめっき方法
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
GB9722028D0 (en) 1997-10-17 1997-12-17 Shipley Company Ll C Plating of polymers
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6136693A (en) 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
US6013191A (en) 1997-10-27 2000-01-11 Advanced Refractory Technologies, Inc. Method of polishing CVD diamond films by oxygen plasma
US6379576B2 (en) 1997-11-17 2002-04-30 Mattson Technology, Inc. Systems and methods for variable mode plasma enhanced processing of semiconductor wafers
US6063712A (en) 1997-11-25 2000-05-16 Micron Technology, Inc. Oxide etch and method of etching
US5849639A (en) 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
US6136165A (en) 1997-11-26 2000-10-24 Cvc Products, Inc. Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6077780A (en) 1997-12-03 2000-06-20 Advanced Micro Devices, Inc. Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6083844A (en) 1997-12-22 2000-07-04 Lam Research Corporation Techniques for etching an oxide layer
US6415858B1 (en) 1997-12-31 2002-07-09 Temptronic Corporation Temperature control system for a workpiece chuck
US6406759B1 (en) 1998-01-08 2002-06-18 The University Of Tennessee Research Corporation Remote exposure of workpieces using a recirculated plasma
JPH11204442A (ja) 1998-01-12 1999-07-30 Tokyo Electron Ltd 枚葉式の熱処理装置
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6074514A (en) 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US5932077A (en) 1998-02-09 1999-08-03 Reynolds Tech Fabricators, Inc. Plating cell with horizontal product load mechanism
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6186091B1 (en) 1998-02-11 2001-02-13 Silicon Genesis Corporation Shielded platen design for plasma immersion ion implantation
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6627532B1 (en) 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6197688B1 (en) 1998-02-12 2001-03-06 Motorola Inc. Interconnect structure in a semiconductor device and method of formation
US6171661B1 (en) 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
JP4151862B2 (ja) 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6892669B2 (en) 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
JP4217299B2 (ja) 1998-03-06 2009-01-28 東京エレクトロン株式会社 処理装置
US6177222B1 (en) 1998-03-12 2001-01-23 Xerox Corporation Coated photographic papers
US6551939B2 (en) 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US5920792A (en) 1998-03-19 1999-07-06 Winbond Electronics Corp High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers
US6194038B1 (en) 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6602434B1 (en) 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6203657B1 (en) 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6395150B1 (en) 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
JP2976965B2 (ja) 1998-04-02 1999-11-10 日新電機株式会社 成膜方法及び成膜装置
JP2002510878A (ja) 1998-04-02 2002-04-09 アプライド マテリアルズ インコーポレイテッド 低ｋ誘電体をエッチングする方法
US6198616B1 (en) 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US6174810B1 (en) 1998-04-06 2001-01-16 Motorola, Inc. Copper interconnect structure and method of formation
US6117245A (en) 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
US5997649A (en) 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6184489B1 (en) 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6113771A (en) 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6077386A (en) 1998-04-23 2000-06-20 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6179924B1 (en) 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6093594A (en) 1998-04-29 2000-07-25 Advanced Micro Devices, Inc. CMOS optimization method utilizing sacrificial sidewall spacer
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US6030881A (en) 1998-05-05 2000-02-29 Novellus Systems, Inc. High throughput chemical vapor deposition process capable of filling high aspect ratio structures
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
KR100505310B1 (ko) * 1998-05-13 2005-08-04 동경 엘렉트론 주식회사 성막 장치 및 방법
US6509283B1 (en) 1998-05-13 2003-01-21 National Semiconductor Corporation Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon
US6007785A (en) 1998-05-20 1999-12-28 Academia Sinica Apparatus for efficient ozone generation
EP0959496B1 (en) 1998-05-22 2006-07-19 Applied Materials, Inc. Methods for forming self-planarized dielectric layer for shallow trench isolation
KR100296137B1 (ko) 1998-06-16 2001-08-07 박종섭 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
JP2000012514A (ja) 1998-06-19 2000-01-14 Hitachi Ltd 後処理方法
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
US6562128B1 (en) 2001-11-28 2003-05-13 Seh America, Inc. In-situ post epitaxial treatment process
JP2003517190A (ja) 1998-06-30 2003-05-20 セミトウール・インコーポレーテツド ミクロ電子工学の適用のための金属被覆構造物及びその構造物の形成法
US6037018A (en) 1998-07-01 2000-03-14 Taiwan Semiconductor Maufacturing Company Shallow trench isolation filled by high density plasma chemical vapor deposition
US6248429B1 (en) 1998-07-06 2001-06-19 Micron Technology, Inc. Metallized recess in a substrate
JP2000026975A (ja) 1998-07-09 2000-01-25 Komatsu Ltd 表面処理装置
KR100265866B1 (ko) 1998-07-11 2000-12-01 황철주 반도체 제조장치
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6063683A (en) 1998-07-27 2000-05-16 Acer Semiconductor Manufacturing, Inc. Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells
US6436816B1 (en) 1998-07-31 2002-08-20 Industrial Technology Research Institute Method of electroless plating copper on nitride barrier
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
US6074954A (en) 1998-08-31 2000-06-13 Applied Materials, Inc Process for control of the shape of the etch front in the etching of polysilicon
US6383951B1 (en) 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6440863B1 (en) 1998-09-04 2002-08-27 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming patterned oxygen containing plasma etchable layer
US6165912A (en) 1998-09-17 2000-12-26 Cfmt, Inc. Electroless metal deposition of electronic components in an enclosable vessel
US6037266A (en) 1998-09-28 2000-03-14 Taiwan Semiconductor Manufacturing Company Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher
JP3725708B2 (ja) 1998-09-29 2005-12-14 株式会社東芝 半導体装置
US6170429B1 (en) 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6277733B1 (en) 1998-10-05 2001-08-21 Texas Instruments Incorporated Oxygen-free, dry plasma process for polymer removal
JP3764594B2 (ja) 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
US6180523B1 (en) 1998-10-13 2001-01-30 Industrial Technology Research Institute Copper metallization of USLI by electroless process
US6228758B1 (en) 1998-10-14 2001-05-08 Advanced Micro Devices, Inc. Method of making dual damascene conductive interconnections and integrated circuit device comprising same
US6251802B1 (en) 1998-10-19 2001-06-26 Micron Technology, Inc. Methods of forming carbon-containing layers
US6107199A (en) 1998-10-24 2000-08-22 International Business Machines Corporation Method for improving the morphology of refractory metal thin films
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
JP3064268B2 (ja) 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
US6176198B1 (en) 1998-11-02 2001-01-23 Applied Materials, Inc. Apparatus and method for depositing low K dielectric materials
US6462371B1 (en) 1998-11-24 2002-10-08 Micron Technology Inc. Films doped with carbon for use in integrated circuit technology
US6203863B1 (en) 1998-11-27 2001-03-20 United Microelectronics Corp. Method of gap filling
US6258220B1 (en) 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6251236B1 (en) 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6228233B1 (en) 1998-11-30 2001-05-08 Applied Materials, Inc. Inflatable compliant bladder assembly
US6015747A (en) 1998-12-07 2000-01-18 Advanced Micro Device Method of metal/polysilicon gate formation in a field effect transistor
US6242349B1 (en) 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
DE59914708D1 (de) 1998-12-24 2008-05-08 Atmel Germany Gmbh Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
KR20000044928A (ko) 1998-12-30 2000-07-15 김영환 반도체 소자의 트랜치 형성 방법
DE19901210A1 (de) 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
US6499425B1 (en) 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
TW428256B (en) 1999-01-25 2001-04-01 United Microelectronics Corp Structure of conducting-wire layer and its fabricating method
JP3330554B2 (ja) 1999-01-27 2002-09-30 松下電器産業株式会社 エッチング方法
US6245669B1 (en) 1999-02-05 2001-06-12 Taiwan Semiconductor Manufacturing Company High selectivity Si-rich SiON etch-stop layer
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
KR100322545B1 (ko) 1999-02-10 2002-03-18 윤종용 건식 세정 공정을 전 공정으로 이용하는 반도체 장치의콘택홀 채움 방법
US6010962A (en) 1999-02-12 2000-01-04 Taiwan Semiconductor Manufacturing Company Copper chemical-mechanical-polishing (CMP) dishing
US6245670B1 (en) 1999-02-19 2001-06-12 Advanced Micro Devices, Inc. Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure
TW469534B (en) 1999-02-23 2001-12-21 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
US6291282B1 (en) 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
TW582050B (en) 1999-03-03 2004-04-01 Ebara Corp Apparatus and method for processing substrate
US6136163A (en) 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6312995B1 (en) 1999-03-08 2001-11-06 Advanced Micro Devices, Inc. MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration
US6468604B1 (en) 1999-03-17 2002-10-22 Anelva Corporation Method for manufacturing a titanium nitride thin film
US6197705B1 (en) 1999-03-18 2001-03-06 Chartered Semiconductor Manufacturing Ltd. Method of silicon oxide and silicon glass films deposition
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6238582B1 (en) 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
US6144099A (en) 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
JP2000290777A (ja) 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6099697A (en) 1999-04-13 2000-08-08 Applied Materials, Inc. Method of and apparatus for restoring a support surface in a semiconductor wafer processing system
US6450116B1 (en) 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
US6110836A (en) 1999-04-22 2000-08-29 Applied Materials, Inc. Reactive plasma etch cleaning of high aspect ratio openings
US6110832A (en) 1999-04-28 2000-08-29 International Business Machines Corporation Method and apparatus for slurry polishing
JP3965258B2 (ja) 1999-04-30 2007-08-29 日本碍子株式会社 半導体製造装置用のセラミックス製ガス供給構造
US6541671B1 (en) 2002-02-13 2003-04-01 The Regents Of The University Of California Synthesis of 2H- and 13C-substituted dithanes
JP3099066B1 (ja) 1999-05-07 2000-10-16 東京工業大学長 薄膜構造体の製造方法
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6490146B2 (en) 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
JP3482904B2 (ja) 1999-05-10 2004-01-06 松下電器産業株式会社 プラズマ処理方法及び装置
US6129829A (en) 1999-05-14 2000-10-10 Thompson; Donald E. Electrostatic filter for dielectric fluid
EP1198610A4 (en) 1999-05-14 2004-04-07 Univ California PLASMA POWER GENERATING DEVICE WITH A LARGE PRESSURE RANGE AT LOW TEMPERATURES
US7091605B2 (en) 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
JP2000331993A (ja) 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
US6464795B1 (en) 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
EP1879213B1 (en) 1999-05-26 2012-03-14 Tokyo Electron Limited Plasma processing apparatus
US6323128B1 (en) 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
JP3320685B2 (ja) 1999-06-02 2002-09-03 株式会社半導体先端テクノロジーズ 微細パターン形成方法
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
US6565661B1 (en) 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US6174812B1 (en) 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US20020033233A1 (en) 1999-06-08 2002-03-21 Stephen E. Savas Icp reactor having a conically-shaped plasma-generating section
US6367413B1 (en) 1999-06-15 2002-04-09 Tokyo Electron Limited Apparatus for monitoring substrate biasing during plasma processing of a substrate
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6161576A (en) 1999-06-23 2000-12-19 Mks Instruments, Inc. Integrated turbo pump and control valve system
US6110530A (en) 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
FR2795555B1 (fr) 1999-06-28 2002-12-13 France Telecom Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
US6277752B1 (en) 1999-06-28 2001-08-21 Taiwan Semiconductor Manufacturing Company Multiple etch method for forming residue free patterned hard mask layer
US6242360B1 (en) 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
US6245192B1 (en) * 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6415736B1 (en) * 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6258223B1 (en) 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6516815B1 (en) 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6351013B1 (en) 1999-07-13 2002-02-26 Advanced Micro Devices, Inc. Low-K sub spacer pocket formation for gate capacitance reduction
US6342733B1 (en) 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US6235643B1 (en) 1999-08-10 2001-05-22 Applied Materials, Inc. Method for etching a trench having rounded top and bottom corners in a silicon substrate
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
EP1077480B1 (en) 1999-08-17 2008-11-12 Applied Materials, Inc. Method and apparatus to enhance properties of Si-O-C low K films
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
EP1214459B1 (en) 1999-08-17 2009-01-07 Tokyo Electron Limited Pulsed plasma processing method and apparatus
JP4220075B2 (ja) 1999-08-20 2009-02-04 東京エレクトロン株式会社 成膜方法および成膜装置
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US6375748B1 (en) 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
JP4285853B2 (ja) 1999-09-08 2009-06-24 東京エレクトロン株式会社 処理方法
EP1083593A1 (en) 1999-09-10 2001-03-14 Interuniversitair Micro-Elektronica Centrum Vzw Etching of silicon nitride by anhydrous halogen gas
US6441492B1 (en) 1999-09-10 2002-08-27 James A. Cunningham Diffusion barriers for copper interconnect systems
US6548414B2 (en) 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
JP3514186B2 (ja) 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
US6503843B1 (en) 1999-09-21 2003-01-07 Applied Materials, Inc. Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill
US6432819B1 (en) 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
US6153935A (en) 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6321587B1 (en) 1999-10-15 2001-11-27 Radian International Llc Solid state fluorine sensor system and method
US6423284B1 (en) 1999-10-18 2002-07-23 Advanced Technology Materials, Inc. Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases
US6364949B1 (en) 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
US20010041444A1 (en) 1999-10-29 2001-11-15 Jeffrey A. Shields Tin contact barc for tungsten polished contacts
DE29919142U1 (de) 1999-10-30 2001-03-08 Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen Plasmadüse
US6551924B1 (en) 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
EP1099776A1 (en) 1999-11-09 2001-05-16 Applied Materials, Inc. Plasma cleaning step in a salicide process
JP3366301B2 (ja) 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
US6162302A (en) 1999-11-16 2000-12-19 Agilent Technologies Method of cleaning quartz substrates using conductive solutions
US8114245B2 (en) 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6573194B2 (en) 1999-11-29 2003-06-03 Texas Instruments Incorporated Method of growing surface aluminum nitride on aluminum films with low energy barrier
US6465350B1 (en) 1999-11-29 2002-10-15 Texas Instruments Incorporated Aluminum nitride thin film formation on integrated circuits
US6599842B2 (en) 1999-11-29 2003-07-29 Applied Materials, Inc. Method for rounding corners and removing damaged outer surfaces of a trench
TW484170B (en) 1999-11-30 2002-04-21 Applied Materials Inc Integrated modular processing platform
AU2905901A (en) 1999-11-30 2001-06-12 Regents Of The University Of California, The Method for producing fluorinated diamond-like carbon films
US6342453B1 (en) 1999-12-03 2002-01-29 Applied Materials, Inc. Method for CVD process control for enhancing device performance
DE10060002B4 (de) 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
JP2001164371A (ja) 1999-12-07 2001-06-19 Nec Corp プラズマｃｖｄ装置およびプラズマｃｖｄ成膜法
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
JP3659101B2 (ja) 1999-12-13 2005-06-15 富士ゼロックス株式会社 窒化物半導体素子及びその製造方法
JP4695238B2 (ja) 1999-12-14 2011-06-08 東京エレクトロン株式会社 圧力制御方法
US6277763B1 (en) 1999-12-16 2001-08-21 Applied Materials, Inc. Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
KR100385133B1 (ko) 1999-12-16 2003-05-22 엘지전자 주식회사 교환기의 셀 다중화/역다중화 시스템
US6225745B1 (en) 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
WO2001046492A1 (en) 1999-12-22 2001-06-28 Tokyo Electron Limited Method and system for reducing damage to substrates during plasma processing with a resonator source
US6238513B1 (en) 1999-12-28 2001-05-29 International Business Machines Corporation Wafer lift assembly
KR20010058774A (ko) 1999-12-30 2001-07-06 박종섭 반도체 소자의 제조 방법
US6463782B1 (en) 2000-01-13 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Self-centering calibration tool and method of calibrating
US6306246B1 (en) 2000-01-14 2001-10-23 Advanced Micro Devices, Inc. Dual window optical port for improved end point detection
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6656831B1 (en) 2000-01-26 2003-12-02 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of a metal nitride layer
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
JP3723712B2 (ja) 2000-02-10 2005-12-07 株式会社日立国際電気 基板処理装置及び基板処理方法
US6447636B1 (en) 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
KR100378871B1 (ko) 2000-02-16 2003-04-07 주식회사 아펙스 라디칼 증착을 위한 샤워헤드장치
US6743473B1 (en) 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
TW580735B (en) 2000-02-21 2004-03-21 Hitachi Ltd Plasma treatment apparatus and treating method of sample material
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6350320B1 (en) 2000-02-22 2002-02-26 Applied Materials, Inc. Heater for processing chamber
EP1127957A1 (en) 2000-02-24 2001-08-29 Asm Japan K.K. A film forming apparatus having cleaning function
US6391788B1 (en) 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6958098B2 (en) 2000-02-28 2005-10-25 Applied Materials, Inc. Semiconductor wafer support lift-pin assembly
JP2001319885A (ja) 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
KR100350056B1 (ko) 2000-03-09 2002-08-24 삼성전자 주식회사 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법
US6537707B1 (en) 2000-03-15 2003-03-25 Agilent Technologies, Inc. Two-stage roughing and controlled deposition rates for fabricating laser ablation masks
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US7220937B2 (en) 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6900596B2 (en) 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6527968B1 (en) 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
JP3433721B2 (ja) 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
JP2001284340A (ja) 2000-03-30 2001-10-12 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
JP4056195B2 (ja) 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
AU2001247685A1 (en) 2000-03-30 2001-10-15 Tokyo Electron Limited Method of and apparatus for tunable gas injection in a plasma processing system
DE10016340C1 (de) 2000-03-31 2001-12-06 Promos Technologies Inc Verfahren zur Herstellung von flaschenförmigen Tiefgräben zur Verwendung in Halbleitervorrichtungen
US6558564B1 (en) 2000-04-05 2003-05-06 Applied Materials Inc. Plasma energy control by inducing plasma instability
JP2001355074A (ja) 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US7892974B2 (en) 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
KR20010096229A (ko) 2000-04-18 2001-11-07 황 철 주 반도체 소자의 극박막 형성장치 및 그 형성방법
US6762129B2 (en) 2000-04-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
JP2001308023A (ja) 2000-04-21 2001-11-02 Tokyo Electron Ltd 熱処理装置及び方法
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6779481B2 (en) 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
JP2001313282A (ja) 2000-04-28 2001-11-09 Nec Corp ドライエッチング方法
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
JP3662472B2 (ja) 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
EP1435655A3 (en) 2000-05-10 2004-07-14 Ibiden Co., Ltd. Electrostatic chuck
US6679981B1 (en) 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
KR100638917B1 (ko) 2000-05-17 2006-10-25 동경 엘렉트론 주식회사 처리 장치 부품의 조립 기구 및 그 조립 방법
US6364958B1 (en) 2000-05-24 2002-04-02 Applied Materials, Inc. Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
TW454429B (en) 2000-05-31 2001-09-11 Nanya Technology Corp Plasma generator
US6335261B1 (en) 2000-05-31 2002-01-01 International Business Machines Corporation Directional CVD process with optimized etchback
JP2002194547A (ja) 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
US6729081B2 (en) 2000-06-09 2004-05-04 United Solar Systems Corporation Self-adhesive photovoltaic module
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6603269B1 (en) 2000-06-13 2003-08-05 Applied Materials, Inc. Resonant chamber applicator for remote plasma source
KR100406174B1 (ko) 2000-06-15 2003-11-19 주식회사 하이닉스반도체 화학적 강화 화학 기상 증착 장비에 사용되는 샤워 헤드
US6509623B2 (en) 2000-06-15 2003-01-21 Newport Fab, Llc Microelectronic air-gap structures and methods of forming the same
US6391753B1 (en) 2000-06-20 2002-05-21 Advanced Micro Devices, Inc. Process for forming gate conductors
US6645550B1 (en) 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
US6531069B1 (en) 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
US6427623B2 (en) 2000-06-23 2002-08-06 Anelva Corporation Chemical vapor deposition system
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6303418B1 (en) 2000-06-30 2001-10-16 Chartered Semiconductor Manufacturing Ltd. Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer
US6835278B2 (en) 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
DE10032607B4 (de) 2000-07-07 2004-08-12 Leo Elektronenmikroskopie Gmbh Teilchenstrahlgerät mit einer im Ultrahochvakuum zu betreibenden Teilchenquelle und kaskadenförmige Pumpanordnung für ein solches Teilchenstrahlgerät
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6736987B1 (en) 2000-07-12 2004-05-18 Techbank Corporation Silicon etching apparatus using XeF2
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
KR100366623B1 (ko) 2000-07-18 2003-01-09 삼성전자 주식회사 반도체 기판 또는 ｌｃｄ 기판의 세정방법
AU2001288225A1 (en) 2000-07-24 2002-02-05 The University Of Maryland College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
WO2002009171A1 (fr) 2000-07-25 2002-01-31 Ibiden Co., Ltd. Substrat ceramique pour appareil de fabrication/inspection de semi-conducteurs, element chauffant en ceramique, dispositif de retenue electrostatique sans attache et substrat pour testeur de tranches
US6764958B1 (en) 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US20020185226A1 (en) 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
US6677242B1 (en) 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
US6412437B1 (en) 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
US6446572B1 (en) 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6800830B2 (en) 2000-08-18 2004-10-05 Hitachi Kokusai Electric, Inc. Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
US6335288B1 (en) 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6459066B1 (en) 2000-08-25 2002-10-01 Board Of Regents, The University Of Texas System Transmission line based inductively coupled plasma source with stable impedance
US6372657B1 (en) 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
US6569774B1 (en) 2000-08-31 2003-05-27 Micron Technology, Inc. Method to eliminate striations and surface roughness caused by dry etch
JP2002075972A (ja) 2000-09-04 2002-03-15 Hitachi Ltd 半導体装置の製造方法
JP4484345B2 (ja) 2000-09-11 2010-06-16 東京エレクトロン株式会社 半導体装置及びその製造方法
US6465366B1 (en) 2000-09-12 2002-10-15 Applied Materials, Inc. Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
JP2002100578A (ja) 2000-09-25 2002-04-05 Crystage Co Ltd 薄膜形成装置
US20020038791A1 (en) 2000-10-03 2002-04-04 Tomohiro Okumura Plasma processing method and apparatus
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
US6461974B1 (en) 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
DK200001497A (da) 2000-10-08 2002-04-09 Scanavo As Opbevaringsindretning for en databærer
JP2002115068A (ja) 2000-10-11 2002-04-19 Applied Materials Inc シャワーヘッド、基板処理装置および基板製造方法
KR100375102B1 (ko) 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
US6403491B1 (en) 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
JP4602532B2 (ja) 2000-11-10 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
JP2002151473A (ja) 2000-11-13 2002-05-24 Tokyo Electron Ltd プラズマ処理装置及びその組立方法
US6610362B1 (en) 2000-11-20 2003-08-26 Intel Corporation Method of forming a carbon doped oxide layer on a substrate
KR100382725B1 (ko) 2000-11-24 2003-05-09 삼성전자주식회사 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법
AUPR179500A0 (en) 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
US6291348B1 (en) 2000-11-30 2001-09-18 Advanced Micro Devices, Inc. Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed
US6544340B2 (en) 2000-12-08 2003-04-08 Applied Materials, Inc. Heater with detachable ceramic top plate
US6448537B1 (en) 2000-12-11 2002-09-10 Eric Anton Nering Single-wafer process chamber thermal convection processes
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US6461972B1 (en) 2000-12-22 2002-10-08 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
KR100382493B1 (ko) 2000-12-28 2003-05-09 엘지전자 주식회사 세경관형 열교환기
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US20020124867A1 (en) 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
US6500772B2 (en) 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
FR2819341B1 (fr) 2001-01-11 2003-06-27 St Microelectronics Sa Procede d'integration d'une cellule dram
US6879981B2 (en) 2001-01-16 2005-04-12 Corigin Ltd. Sharing live data with a non cooperative DBMS
US6849854B2 (en) 2001-01-18 2005-02-01 Saintech Pty Ltd. Ion source
US6358827B1 (en) 2001-01-19 2002-03-19 Taiwan Semiconductor Manufacturing Company Method of forming a squared-off, vertically oriented polysilicon spacer gate
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6743732B1 (en) 2001-01-26 2004-06-01 Taiwan Semiconductor Manufacturing Company Organic low K dielectric etch with NH3 chemistry
JP2002222934A (ja) 2001-01-29 2002-08-09 Nec Corp 半導体装置およびその製造方法
US6893969B2 (en) 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6537733B2 (en) 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
JP2002256235A (ja) 2001-03-01 2002-09-11 Hitachi Chem Co Ltd 接着シート、半導体装置の製造方法および半導体装置
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP4657473B2 (ja) 2001-03-06 2011-03-23 東京エレクトロン株式会社 プラズマ処理装置
US6348407B1 (en) 2001-03-15 2002-02-19 Chartered Semiconductor Manufacturing Inc. Method to improve adhesion of organic dielectrics in dual damascene interconnects
US6886491B2 (en) 2001-03-19 2005-05-03 Apex Co. Ltd. Plasma chemical vapor deposition apparatus
KR100423953B1 (ko) 2001-03-19 2004-03-24 디지웨이브 테크놀러지스 주식회사 화학기상증착장치
JP5013353B2 (ja) 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
US7084070B1 (en) 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
US6670278B2 (en) 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US20020177321A1 (en) 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
FR2823032B1 (fr) 2001-04-03 2003-07-11 St Microelectronics Sa Resonateur electromecanique a poutre vibrante
US20020144657A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. ALD reactor employing electrostatic chuck
JP3707394B2 (ja) 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
CN1304643C (zh) 2001-04-20 2007-03-14 克里斯铝轧制品有限公司 镀覆和预处理铝件方法
JP2002319571A (ja) 2001-04-20 2002-10-31 Kawasaki Microelectronics Kk エッチング槽の前処理方法及び半導体装置の製造方法
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US7161121B1 (en) 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6914009B2 (en) 2001-05-07 2005-07-05 Applied Materials Inc Method of making small transistor lengths
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
US6974523B2 (en) 2001-05-16 2005-12-13 Lam Research Corporation Hollow anode plasma reactor and method
US20020170678A1 (en) 2001-05-18 2002-11-21 Toshio Hayashi Plasma processing apparatus
US20020197823A1 (en) 2001-05-18 2002-12-26 Yoo Jae-Yoon Isolation method for semiconductor device
JP4720019B2 (ja) 2001-05-18 2011-07-13 東京エレクトロン株式会社 冷却機構及び処理装置
US6717189B2 (en) 2001-06-01 2004-04-06 Ebara Corporation Electroless plating liquid and semiconductor device
JP2004533123A (ja) 2001-06-14 2004-10-28 マトソン テクノロジー インコーポレーテッド 銅接続用の障壁エンハンスメント工程
US6506291B2 (en) 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US6573606B2 (en) 2001-06-14 2003-06-03 International Business Machines Corporation Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6685803B2 (en) 2001-06-22 2004-02-03 Applied Materials, Inc. Plasma treatment of processing gases
US6770166B1 (en) 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
JP2003019433A (ja) 2001-07-06 2003-01-21 Sekisui Chem Co Ltd 放電プラズマ処理装置及びそれを用いた処理方法
KR100403630B1 (ko) 2001-07-07 2003-10-30 삼성전자주식회사 고밀도 플라즈마를 이용한 반도체 장치의 층간 절연막 형성방법
US6531377B2 (en) 2001-07-13 2003-03-11 Infineon Technologies Ag Method for high aspect ratio gap fill using sequential HDP-CVD
US6596599B1 (en) 2001-07-16 2003-07-22 Taiwan Semiconductor Manufacturing Company Gate stack for high performance sub-micron CMOS devices
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6846745B1 (en) 2001-08-03 2005-01-25 Novellus Systems, Inc. High-density plasma process for filling high aspect ratio structures
US6596654B1 (en) 2001-08-24 2003-07-22 Novellus Systems, Inc. Gap fill for high aspect ratio structures
JP3914452B2 (ja) 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US6984288B2 (en) 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
TW554069B (en) 2001-08-10 2003-09-21 Ebara Corp Plating device and method
US7179556B2 (en) 2001-08-10 2007-02-20 Denso Corporation Fuel cell system
KR20040018558A (ko) 2001-08-13 2004-03-03 가부시키 가이샤 에바라 세이사꾸쇼 반도체장치와 그 제조방법 및 도금액
US20030038305A1 (en) 2001-08-21 2003-02-27 Wasshuber Christoph A. Method for manufacturing and structure of transistor with low-k spacer
JP2003059914A (ja) 2001-08-21 2003-02-28 Hitachi Kokusai Electric Inc プラズマ処理装置
US6753506B2 (en) 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
US6762127B2 (en) 2001-08-23 2004-07-13 Yves Pierre Boiteux Etch process for dielectric materials comprising oxidized organo silane materials
US7199328B2 (en) 2001-08-29 2007-04-03 Tokyo Electron Limited Apparatus and method for plasma processing
WO2003018867A1 (en) 2001-08-29 2003-03-06 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
US6796314B1 (en) 2001-09-07 2004-09-28 Novellus Systems, Inc. Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process
KR100441297B1 (ko) 2001-09-14 2004-07-23 주성엔지니어링(주) 리모트 플라즈마를 이용하는 ｃｃｐ형 ｐｅｃｖｄ장치
US20030054608A1 (en) 2001-09-17 2003-03-20 Vanguard International Semiconductor Corporation Method for forming shallow trench isolation in semiconductor device
US6555467B2 (en) 2001-09-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of making air gaps copper interconnect
US6462372B1 (en) 2001-10-09 2002-10-08 Silicon-Based Technology Corp. Scaled stack-gate flash memory device
US6656837B2 (en) 2001-10-11 2003-12-02 Applied Materials, Inc. Method of eliminating photoresist poisoning in damascene applications
EP1302988A3 (de) 2001-10-12 2007-01-24 Bayer MaterialScience AG Photovoltaik-Module mit einer thermoplastischen Schmelzklebeschicht sowie ein Verfahren zu ihrer Herstellung
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
US20030072639A1 (en) 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
KR100433091B1 (ko) 2001-10-23 2004-05-28 주식회사 하이닉스반도체 반도체소자의 도전배선 형성방법
JP3759895B2 (ja) 2001-10-24 2006-03-29 松下電器産業株式会社 エッチング方法
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20080102203A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US20030087488A1 (en) 2001-11-07 2003-05-08 Tokyo Electron Limited Inductively coupled plasma source for improved process uniformity
JP4040284B2 (ja) 2001-11-08 2008-01-30 住友大阪セメント株式会社 プラズマ発生用電極内蔵型サセプタ及びその製造方法
JP2003158080A (ja) 2001-11-22 2003-05-30 Mitsubishi Electric Corp 半導体製造装置、半導体製造装置における堆積物除去方法、および半導体装置の製造方法
KR100443121B1 (ko) 2001-11-29 2004-08-04 삼성전자주식회사 반도체 공정의 수행 방법 및 반도체 공정 장치
US7017514B1 (en) 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
US6794290B1 (en) 2001-12-03 2004-09-21 Novellus Systems, Inc. Method of chemical modification of structure topography
JP4392852B2 (ja) 2001-12-07 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置に用いられる排気リング機構及びプラズマ処理装置
KR100641762B1 (ko) 2001-12-07 2006-11-06 동경 엘렉트론 주식회사 절연막의 질화 방법, 반도체 장치 및 반도체 장치의 제조방법, 기판 처리 장치 및 기판 처리 방법
US6905968B2 (en) 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
WO2003052808A2 (en) 2001-12-13 2003-06-26 Applied Materials, Inc. Self-aligned contact etch with high sensitivity to nitride shoulder
JP4488662B2 (ja) * 2001-12-13 2010-06-23 東京エレクトロン株式会社 プラズマ処理装置、マッチングボックス
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
JP3969081B2 (ja) 2001-12-14 2007-08-29 東京エレクトロン株式会社 プラズマ処理装置
US6605874B2 (en) 2001-12-19 2003-08-12 Intel Corporation Method of making semiconductor device using an interconnect
WO2003054912A1 (en) 2001-12-20 2003-07-03 Tokyo Electron Limited Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US20030116439A1 (en) 2001-12-21 2003-06-26 International Business Machines Corporation Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices
JP2003197615A (ja) 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法
KR100442167B1 (ko) 2001-12-26 2004-07-30 주성엔지니어링(주) 자연산화막 제거방법
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
KR100484258B1 (ko) 2001-12-27 2005-04-22 주식회사 하이닉스반도체 반도체 소자 제조 방법
US6677247B2 (en) 2002-01-07 2004-01-13 Applied Materials Inc. Method of increasing the etch selectivity of a contact sidewall to a preclean etchant
US6828241B2 (en) 2002-01-07 2004-12-07 Applied Materials, Inc. Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
JP2003217898A (ja) 2002-01-16 2003-07-31 Sekisui Chem Co Ltd 放電プラズマ処理装置
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US6869880B2 (en) 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
US20040060514A1 (en) 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
TWI239794B (en) 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
US7226504B2 (en) 2002-01-31 2007-06-05 Sharp Laboratories Of America, Inc. Method to form thick relaxed SiGe layer with trench structure
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
US7048814B2 (en) 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7033447B2 (en) 2002-02-08 2006-04-25 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7479304B2 (en) 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US20080213496A1 (en) 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US6656848B1 (en) 2002-02-22 2003-12-02 Scientific Systems Research Limited Plasma chamber conditioning
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US6677167B2 (en) 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US6730355B2 (en) 2002-03-06 2004-05-04 Micron Technology, Inc. Chemical vapor deposition method of forming a material over at least two substrates
US20060252265A1 (en) 2002-03-06 2006-11-09 Guangxiang Jin Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US7252011B2 (en) 2002-03-11 2007-08-07 Mks Instruments, Inc. Surface area deposition trap
JP3813562B2 (ja) 2002-03-15 2006-08-23 富士通株式会社 半導体装置及びその製造方法
US7256370B2 (en) 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
US20040003828A1 (en) 2002-03-21 2004-01-08 Jackson David P. Precision surface treatments using dense fluids and a plasma
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
JP4053326B2 (ja) 2002-03-27 2008-02-27 東芝松下ディスプレイテクノロジー株式会社 薄膜トランジスタの製造方法
US6883733B1 (en) 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
US6541397B1 (en) 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
JP4330315B2 (ja) 2002-03-29 2009-09-16 東京エレクトロン株式会社 プラズマ処理装置
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US20030190426A1 (en) 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
US6921556B2 (en) 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US6897532B1 (en) 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US6616967B1 (en) 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
JP3773189B2 (ja) 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
KR100448714B1 (ko) 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
US6794889B2 (en) 2002-04-26 2004-09-21 Agilent Technologies, Inc. Unified apparatus and method to assure probe card-to-wafer parallelism in semiconductor automatic wafer test, probe card measurement systems, and probe card manufacturing
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6908862B2 (en) 2002-05-03 2005-06-21 Applied Materials, Inc. HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US20030215570A1 (en) 2002-05-16 2003-11-20 Applied Materials, Inc. Deposition of silicon nitride
TW538497B (en) 2002-05-16 2003-06-21 Nanya Technology Corp Method to form a bottle-shaped trench
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
JP2003338491A (ja) 2002-05-21 2003-11-28 Mitsubishi Electric Corp プラズマ処理装置および半導体装置の製造方法
JP2003347278A (ja) 2002-05-23 2003-12-05 Hitachi Kokusai Electric Inc 基板処理装置、及び半導体装置の製造方法
TW535991U (en) 2002-05-24 2003-06-01 Winbond Electronics Corp Barrier device
US6500728B1 (en) 2002-05-24 2002-12-31 Taiwan Semiconductor Manufacturing Company Shallow trench isolation (STI) module to improve contact etch process window
US6673200B1 (en) 2002-05-30 2004-01-06 Lsi Logic Corporation Method of reducing process plasma damage using optical spectroscopy
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
WO2003107409A1 (ja) 2002-06-01 2003-12-24 積水化学工業株式会社 酸化膜形成方法及び酸化膜形成装置
KR100434110B1 (ko) 2002-06-04 2004-06-04 삼성전자주식회사 반도체 장치의 제조방법
US20030230385A1 (en) 2002-06-13 2003-12-18 Applied Materials, Inc. Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system
US6924191B2 (en) 2002-06-20 2005-08-02 Applied Materials, Inc. Method for fabricating a gate structure of a field effect transistor
US7686918B2 (en) 2002-06-21 2010-03-30 Tokyo Electron Limited Magnetron plasma processing apparatus
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
US20040072446A1 (en) 2002-07-02 2004-04-15 Applied Materials, Inc. Method for fabricating an ultra shallow junction of a field effect transistor
US6767844B2 (en) 2002-07-03 2004-07-27 Taiwan Semiconductor Manufacturing Co., Ltd Plasma chamber equipped with temperature-controlled focus ring and method of operating
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US6826451B2 (en) 2002-07-29 2004-11-30 Asml Holding N.V. Lithography tool having a vacuum reticle library coupled to a vacuum chamber
US6818561B1 (en) 2002-07-30 2004-11-16 Advanced Micro Devices, Inc. Control methodology using optical emission spectroscopy derived data, system for performing same
EP1585999A4 (en) 2002-08-02 2008-09-17 E A Fischione Instr Inc METHOD AND DEVICE FOR PREPARING SAMPLES FOR MICROSCOPY
US20060046412A1 (en) 2002-08-06 2006-03-02 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US6921555B2 (en) 2002-08-06 2005-07-26 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20040058293A1 (en) 2002-08-06 2004-03-25 Tue Nguyen Assembly line processing system
US20060040055A1 (en) 2002-08-06 2006-02-23 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
DE10392996T5 (de) 2002-08-08 2005-07-21 Trikon Technologies Limited, Newport Verbesserungen für Duschköpfe
JP3861036B2 (ja) * 2002-08-09 2006-12-20 三菱重工業株式会社 プラズマｃｖｄ装置
US7541270B2 (en) 2002-08-13 2009-06-02 Micron Technology, Inc. Methods for forming openings in doped silicon dioxide
US20040033677A1 (en) 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
US7192486B2 (en) 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
SG108933A1 (en) 2002-08-23 2005-02-28 Asml Netherlands Bv Lithographic projection apparatus and particle barrier for use in said apparatus
US6781173B2 (en) 2002-08-29 2004-08-24 Micron Technology, Inc. MRAM sense layer area control
US7223701B2 (en) 2002-09-06 2007-05-29 Intel Corporation In-situ sequential high density plasma deposition and etch processing for gap fill
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
JP3991315B2 (ja) 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP3832409B2 (ja) 2002-09-18 2006-10-11 住友電気工業株式会社 ウエハー保持体及び半導体製造装置
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
JP4260450B2 (ja) 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US20070051471A1 (en) 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US6991959B2 (en) 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
KR100500852B1 (ko) 2002-10-10 2005-07-12 최대규 원격 플라즈마 발생기
JP4606713B2 (ja) 2002-10-17 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6699380B1 (en) 2002-10-18 2004-03-02 Applied Materials Inc. Modular electrochemical processing system
TW587139B (en) 2002-10-18 2004-05-11 Winbond Electronics Corp Gas distribution system and method for the plasma gas in the chamber
US6802944B2 (en) 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US7628897B2 (en) 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US6853043B2 (en) 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
JP2004165317A (ja) 2002-11-12 2004-06-10 Renesas Technology Corp 半導体装置およびその製造方法
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
KR100862658B1 (ko) * 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치
US6861332B2 (en) 2002-11-21 2005-03-01 Intel Corporation Air gap interconnect method
US6902628B2 (en) 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
US6713873B1 (en) 2002-11-27 2004-03-30 Intel Corporation Adhesion between dielectric materials
JP2004179426A (ja) 2002-11-27 2004-06-24 Tokyo Electron Ltd 基板処理装置のクリーニング方法
US7347901B2 (en) 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
TW561068B (en) 2002-11-29 2003-11-11 Au Optronics Corp Nozzle head with excellent corrosion resistance for dry etching process and anti-corrosion method thereof
US7396773B1 (en) 2002-12-06 2008-07-08 Cypress Semiconductor Company Method for cleaning a gate stack
KR100898580B1 (ko) 2002-12-07 2009-05-20 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
US6858532B2 (en) 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
JP3838969B2 (ja) 2002-12-17 2006-10-25 沖電気工業株式会社 ドライエッチング方法
US20040118344A1 (en) 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
DE10260352A1 (de) 2002-12-20 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung
US20040118519A1 (en) 2002-12-20 2004-06-24 Applied Materials, Inc. Blocker plate bypass design to improve clean rate at the edge of the chamber
US6806949B2 (en) 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
KR100964398B1 (ko) 2003-01-03 2010-06-17 삼성전자주식회사 유도결합형 안테나 및 이를 채용한 플라즈마 처리장치
US6720213B1 (en) 2003-01-15 2004-04-13 International Business Machines Corporation Low-K gate spacers by fluorine implantation
US6808748B2 (en) 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US7500445B2 (en) 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US7316761B2 (en) 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US7205248B2 (en) 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
US7078351B2 (en) 2003-02-10 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist intensive patterning and processing
US20060137613A1 (en) 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
US6982175B2 (en) 2003-02-14 2006-01-03 Unaxis Usa Inc. End point detection in time division multiplexed etch processes
US7604708B2 (en) 2003-02-14 2009-10-20 Applied Materials, Inc. Cleaning of native oxide with hydrogen-containing radicals
US20040195208A1 (en) 2003-02-15 2004-10-07 Pavel Elizabeth G. Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal
US6969619B1 (en) 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
KR100739837B1 (ko) 2003-02-19 2007-07-13 마쯔시다덴기산교 가부시키가이샤 불순물 도입 방법 및 불순물 도입 장치
US20040163590A1 (en) 2003-02-24 2004-08-26 Applied Materials, Inc. In-situ health check of liquid injection vaporizer
US7212078B2 (en) 2003-02-25 2007-05-01 Tokyo Electron Limited Method and assembly for providing impedance matching network and network assembly
US20040163601A1 (en) 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
DE10308870B4 (de) 2003-02-28 2006-07-27 Austriamicrosystems Ag Bipolartransistor mit verbessertem Basis-Emitter-Übergang und Verfahren zur Herstellung
US6913992B2 (en) 2003-03-07 2005-07-05 Applied Materials, Inc. Method of modifying interlayer adhesion
CN100388434C (zh) 2003-03-12 2008-05-14 东京毅力科创株式会社 半导体处理用的基板保持结构和等离子体处理装置
US20040182315A1 (en) 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
JP2004296467A (ja) 2003-03-25 2004-10-21 Hitachi Kokusai Electric Inc 基板処理装置
US20040187787A1 (en) 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US6844929B2 (en) 2003-04-09 2005-01-18 Phase Shift Technology Apparatus and method for holding and transporting thin opaque plates
KR100789063B1 (ko) 2003-04-11 2007-12-26 호야 가부시키가이샤 크롬계 박막의 에칭방법 및 포토마스크의 제조방법
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US7126225B2 (en) 2003-04-15 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US6872909B2 (en) 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
TWI227565B (en) 2003-04-16 2005-02-01 Au Optronics Corp Low temperature poly-Si thin film transistor and method of manufacturing the same
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
JP5404984B2 (ja) 2003-04-24 2014-02-05 東京エレクトロン株式会社 プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US7008877B2 (en) 2003-05-05 2006-03-07 Unaxis Usa Inc. Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias
US6903511B2 (en) 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
DE10320472A1 (de) 2003-05-08 2004-12-02 Kolektor D.O.O. Plasmabehandlung zur Reinigung von Kupfer oder Nickel
KR20040096365A (ko) 2003-05-09 2004-11-16 주식회사 하이닉스반도체 반도체소자의 제조방법
US7045020B2 (en) 2003-05-22 2006-05-16 Applied Materials, Inc. Cleaning a component of a process chamber
US6713835B1 (en) 2003-05-22 2004-03-30 International Business Machines Corporation Method for manufacturing a multi-level interconnect structure
KR100965758B1 (ko) 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
US8580076B2 (en) 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US7081414B2 (en) 2003-05-23 2006-07-25 Applied Materials, Inc. Deposition-selective etch-deposition process for dielectric film gapfill
WO2004107394A2 (ja) 2003-05-27 2004-12-09 Matsushita Electric Works, Ltd. プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法
US20040237897A1 (en) 2003-05-27 2004-12-02 Hiroji Hanawa High-Frequency electrostatically shielded toroidal plasma and radical source
US7205240B2 (en) 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7067432B2 (en) 2003-06-26 2006-06-27 Applied Materials, Inc. Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing
KR100853388B1 (ko) 2003-06-27 2008-08-21 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 기판 처리 방법
US7993460B2 (en) 2003-06-30 2011-08-09 Lam Research Corporation Substrate support having dynamic temperature control
US7151277B2 (en) 2003-07-03 2006-12-19 The Regents Of The University Of California Selective etching of silicon carbide films
JP4245996B2 (ja) 2003-07-07 2009-04-02 株式会社荏原製作所 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置
JP2005033023A (ja) 2003-07-07 2005-02-03 Sony Corp 半導体装置の製造方法および半導体装置
US7368392B2 (en) 2003-07-10 2008-05-06 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
US6995073B2 (en) 2003-07-16 2006-02-07 Intel Corporation Air gap integration
JP3866694B2 (ja) 2003-07-30 2007-01-10 株式会社日立ハイテクノロジーズ Ｌｓｉデバイスのエッチング方法および装置
US7256134B2 (en) 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
JP4239750B2 (ja) 2003-08-13 2009-03-18 セイコーエプソン株式会社 マイクロレンズ及びマイクロレンズの製造方法、光学装置、光伝送装置、レーザプリンタ用ヘッド、並びにレーザプリンタ
US20050035455A1 (en) 2003-08-14 2005-02-17 Chenming Hu Device with low-k dielectric in close proximity thereto and its method of fabrication
US7182816B2 (en) 2003-08-18 2007-02-27 Tokyo Electron Limited Particulate reduction using temperature-controlled chamber shield
US7361865B2 (en) 2003-08-27 2008-04-22 Kyocera Corporation Heater for heating a wafer and method for fabricating the same
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US7078312B1 (en) 2003-09-02 2006-07-18 Novellus Systems, Inc. Method for controlling etch process repeatability
KR20060064067A (ko) 2003-09-03 2006-06-12 동경 엘렉트론 주식회사 가스 처리 장치 및 처리 가스 토출 기구의 방열 방법
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US7282244B2 (en) 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
KR100518594B1 (ko) 2003-09-09 2005-10-04 삼성전자주식회사 로컬 ｓｏｎｏｓ형 비휘발성 메모리 소자 및 그 제조방법
US7030034B2 (en) 2003-09-18 2006-04-18 Micron Technology, Inc. Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
JP2005101141A (ja) 2003-09-24 2005-04-14 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7071532B2 (en) 2003-09-30 2006-07-04 International Business Machines Corporation Adjustable self-aligned air gap dielectric for low capacitance wiring
US7371688B2 (en) 2003-09-30 2008-05-13 Air Products And Chemicals, Inc. Removal of transition metal ternary and/or quaternary barrier materials from a substrate
KR20030083663A (ko) 2003-10-04 2003-10-30 삼영플랜트주식회사 건설폐기물로부터 시멘트 페이스트 및 모르타르가 제거된재생골재 및 모래를 생산하는 방법 및 장치
JP4399227B2 (ja) 2003-10-06 2010-01-13 株式会社フジキン チャンバの内圧制御装置及び内圧被制御式チャンバ
JP4644676B2 (ja) 2003-10-06 2011-03-02 アプライド マテリアルズ インコーポレイテッド フェイスアップウェット処理用のウェーハ温度均一性を改善する装置
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US20050087517A1 (en) 2003-10-09 2005-04-28 Andrew Ott Adhesion between carbon doped oxide and etch stop layers
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7125792B2 (en) 2003-10-14 2006-10-24 Infineon Technologies Ag Dual damascene structure and method
US7465358B2 (en) 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US20070111519A1 (en) 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
JP2005129666A (ja) 2003-10-22 2005-05-19 Canon Inc 処理方法及び装置
JP4306403B2 (ja) 2003-10-23 2009-08-05 東京エレクトロン株式会社 シャワーヘッド構造及びこれを用いた成膜装置
JP2005129688A (ja) 2003-10-23 2005-05-19 Hitachi Ltd 半導体装置の製造方法
US7053994B2 (en) 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
KR100561848B1 (ko) 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
US7709392B2 (en) 2003-11-05 2010-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Low K dielectric surface damage control
JP4273932B2 (ja) 2003-11-07 2009-06-03 株式会社島津製作所 表面波励起プラズマｃｖｄ装置
US7461614B2 (en) 2003-11-12 2008-12-09 Tokyo Electron Limited Method and apparatus for improved baffle plate
US20050103267A1 (en) 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
KR100550808B1 (ko) 2003-11-17 2006-02-09 주식회사 에스테크 전자파 차폐 성능이 우수한 다층 구조의 시트 및 그 제조방법
JP4256763B2 (ja) 2003-11-19 2009-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP4393844B2 (ja) 2003-11-19 2010-01-06 東京エレクトロン株式会社 プラズマ成膜装置及びプラズマ成膜方法
US20050145341A1 (en) 2003-11-19 2005-07-07 Masaki Suzuki Plasma processing apparatus
KR100558925B1 (ko) 2003-11-24 2006-03-10 세메스 주식회사 웨이퍼 에지 식각 장치
US20050109276A1 (en) 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US20050112876A1 (en) 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film
US7202172B2 (en) 2003-12-05 2007-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectronic device having disposable spacer
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7081407B2 (en) 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
KR100546401B1 (ko) 2003-12-17 2006-01-26 삼성전자주식회사 자기정렬된 전하트랩층을 포함하는 반도체 메모리 소자 및그 제조방법
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US20050136684A1 (en) 2003-12-23 2005-06-23 Applied Materials, Inc. Gap-fill techniques
US6958286B2 (en) 2004-01-02 2005-10-25 International Business Machines Corporation Method of preventing surface roughening during hydrogen prebake of SiGe substrates
US6893967B1 (en) 2004-01-13 2005-05-17 Advanced Micro Devices, Inc. L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials
US6852584B1 (en) 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
WO2005072211A2 (en) 2004-01-20 2005-08-11 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20060033678A1 (en) 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7012027B2 (en) 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
US7064078B2 (en) 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
EP1720202A4 (en) 2004-02-09 2009-04-29 Found Advancement Int Science METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND PHOTOGRAVIDE METHOD OF INSULATING FILM
US7291550B2 (en) 2004-02-13 2007-11-06 Chartered Semiconductor Manufacturing Ltd. Method to form a contact hole
US7015415B2 (en) 2004-02-18 2006-03-21 Dry Plasma Systems, Inc. Higher power density downstream plasma
JP4707959B2 (ja) 2004-02-20 2011-06-22 日本エー・エス・エム株式会社 シャワープレート、プラズマ処理装置及びプラズマ処理方法
US20060054280A1 (en) 2004-02-23 2006-03-16 Jang Geun-Ha Apparatus of manufacturing display substrate and showerhead assembly equipped therein
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20070123051A1 (en) 2004-02-26 2007-05-31 Reza Arghavani Oxide etch with nh4-nf3 chemistry
US20060051966A1 (en) 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7780793B2 (en) 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
JP4879159B2 (ja) 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのｃｖｄプロセス
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US7196342B2 (en) 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US20060081337A1 (en) 2004-03-12 2006-04-20 Shinji Himori Capacitive coupling plasma processing apparatus
US7682985B2 (en) 2004-03-17 2010-03-23 Lam Research Corporation Dual doped polysilicon and silicon germanium etch
US7109521B2 (en) 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7358192B2 (en) 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
JP4761723B2 (ja) 2004-04-12 2011-08-31 日本碍子株式会社 基板加熱装置
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
JP3998003B2 (ja) 2004-04-23 2007-10-24 ソニー株式会社 プラズマエッチング法
TWI249774B (en) 2004-04-23 2006-02-21 Nanya Technology Corp Forming method of self-aligned contact for semiconductor device
US20050238807A1 (en) 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
US7115974B2 (en) 2004-04-27 2006-10-03 Taiwan Semiconductor Manfacturing Company, Ltd. Silicon oxycarbide and silicon carbonitride based materials for MOS devices
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7449220B2 (en) 2004-04-30 2008-11-11 Oc Oerlikon Blazers Ag Method for manufacturing a plate-shaped workpiece
US20050241579A1 (en) 2004-04-30 2005-11-03 Russell Kidd Face shield to improve uniformity of blanket CVD processes
WO2005112092A2 (en) 2004-05-11 2005-11-24 Applied Materials, Inc. CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7691686B2 (en) 2004-05-21 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100580584B1 (ko) 2004-05-21 2006-05-16 삼성전자주식회사 리모트 플라즈마 발생 튜브의 표면 세정 방법과 이를이용하는 기판 처리 방법 및 기판 처리 장치
US7049200B2 (en) 2004-05-25 2006-05-23 Applied Materials Inc. Method for forming a low thermal budget spacer
KR100624566B1 (ko) 2004-05-31 2006-09-19 주식회사 하이닉스반도체 커패시터 상부에 유동성 절연막을 갖는 반도체소자 및 그제조 방법
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20050274324A1 (en) 2004-06-04 2005-12-15 Tokyo Electron Limited Plasma processing apparatus and mounting unit thereof
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US20050274396A1 (en) 2004-06-09 2005-12-15 Hong Shih Methods for wet cleaning quartz surfaces of components for plasma processing chambers
US7226852B1 (en) 2004-06-10 2007-06-05 Lam Research Corporation Preventing damage to low-k materials during resist stripping
US7430496B2 (en) 2004-06-16 2008-09-30 Tokyo Electron Limited Method and apparatus for using a pressure control system to monitor a plasma processing system
US7253107B2 (en) 2004-06-17 2007-08-07 Asm International N.V. Pressure control system
US7122949B2 (en) 2004-06-21 2006-10-17 Neocera, Inc. Cylindrical electron beam generating/triggering device and method for generation of electrons
US20050284573A1 (en) 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US7220687B2 (en) 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
US20060005856A1 (en) 2004-06-29 2006-01-12 Applied Materials, Inc. Reduction of reactive gas attack on substrate heater
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7097779B2 (en) 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
JP2006049817A (ja) 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
CN101076614A (zh) 2004-07-07 2007-11-21 莫门蒂夫性能材料股份有限公司 基底上的保护涂层及其制备方法
US7845309B2 (en) 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
KR100614648B1 (ko) 2004-07-15 2006-08-23 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 처리 장치
KR100584485B1 (ko) 2004-07-20 2006-05-29 동부일렉트로닉스 주식회사 반도체 소자의 금속 부식 방지 방법
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
JP4492947B2 (ja) 2004-07-23 2010-06-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7217626B2 (en) 2004-07-26 2007-05-15 Texas Instruments Incorporated Transistor fabrication methods using dual sidewall spacers
JP4579611B2 (ja) 2004-07-26 2010-11-10 株式会社日立ハイテクノロジーズ ドライエッチング方法
US7381291B2 (en) 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7192863B2 (en) 2004-07-30 2007-03-20 Texas Instruments Incorporated Method of eliminating etch ridges in a dual damascene process
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US20060021574A1 (en) * 2004-08-02 2006-02-02 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
US20060024954A1 (en) 2004-08-02 2006-02-02 Zhen-Cheng Wu Copper damascene barrier and capping layer
JP4718141B2 (ja) 2004-08-06 2011-07-06 東京エレクトロン株式会社 薄膜形成方法及び薄膜形成装置
US20060032833A1 (en) 2004-08-10 2006-02-16 Applied Materials, Inc. Encapsulation of post-etch halogenic residue
US7247570B2 (en) 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
US20060043066A1 (en) 2004-08-26 2006-03-02 Kamp Thomas A Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
US20060042752A1 (en) 2004-08-30 2006-03-02 Rueger Neal R Plasma processing apparatuses and methods
US7449416B2 (en) 2004-09-01 2008-11-11 Axcelis Technologies, Inc. Apparatus and plasma ashing process for increasing photoresist removal rate
US7390710B2 (en) 2004-09-02 2008-06-24 Micron Technology, Inc. Protection of tunnel dielectric using epitaxial silicon
US7115525B2 (en) 2004-09-02 2006-10-03 Micron Technology, Inc. Method for integrated circuit fabrication using pitch multiplication
US7329576B2 (en) 2004-09-02 2008-02-12 Micron Technology, Inc. Double-sided container capacitors using a sacrificial layer
JP2006108629A (ja) 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法
US20060292846A1 (en) 2004-09-17 2006-12-28 Pinto Gustavo A Material management in substrate processing
US7138767B2 (en) 2004-09-30 2006-11-21 Tokyo Electron Limited Surface wave plasma processing system and method of using
JP4467453B2 (ja) 2004-09-30 2010-05-26 日本碍子株式会社 セラミックス部材及びその製造方法
US7268084B2 (en) 2004-09-30 2007-09-11 Tokyo Electron Limited Method for treating a substrate
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7244311B2 (en) 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7148155B1 (en) 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7053003B2 (en) 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
JP2006128485A (ja) 2004-10-29 2006-05-18 Asm Japan Kk 半導体処理装置
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
US20060097397A1 (en) 2004-11-10 2006-05-11 Russell Stephen W Method for forming a dual layer, low resistance metallization during the formation of a semiconductor device
US7618515B2 (en) 2004-11-15 2009-11-17 Tokyo Electron Limited Focus ring, plasma etching apparatus and plasma etching method
EP1662546A1 (en) 2004-11-25 2006-05-31 The European Community, represented by the European Commission Inductively coupled plasma processing apparatus
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
US7052553B1 (en) 2004-12-01 2006-05-30 Lam Research Corporation Wet cleaning of electrostatic chucks
US7256121B2 (en) 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
FR2878913B1 (fr) 2004-12-03 2007-01-19 Cit Alcatel Controle des pressions partielles de gaz pour optimisation de procede
US20060118240A1 (en) 2004-12-03 2006-06-08 Applied Science And Technology, Inc. Methods and apparatus for downstream dissociation of gases
JP2006193822A (ja) 2004-12-16 2006-07-27 Sharp Corp めっき装置、めっき方法、半導体装置、及び半導体装置の製造方法
US20060130971A1 (en) 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
KR20070087196A (ko) 2004-12-21 2007-08-27 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 에칭 챔버로부터 부산물 증착을 제거하기 위한인-시튜 챔버 세정 방법
JP2006179693A (ja) 2004-12-22 2006-07-06 Shin Etsu Chem Co Ltd ヒータ付き静電チャック
JP4191137B2 (ja) 2004-12-24 2008-12-03 東京エレクトロン株式会社 基板処理装置のクリーニング方法
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
US20060148243A1 (en) 2004-12-30 2006-07-06 Jeng-Ho Wang Method for fabricating a dual damascene and polymer removal
KR100653722B1 (ko) 2005-01-05 2006-12-05 삼성전자주식회사 저유전막을 갖는 반도체소자의 제조방법
US7465953B1 (en) 2005-01-07 2008-12-16 Board Of Regents, The University Of Texas System Positioning of nanoparticles and fabrication of single election devices
US7253123B2 (en) 2005-01-10 2007-08-07 Applied Materials, Inc. Method for producing gate stack sidewall spacers
KR100610019B1 (ko) 2005-01-11 2006-08-08 삼성전자주식회사 플라즈마 분배장치 및 이를 구비하는 건식 스트리핑 장치
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP4601439B2 (ja) 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
GB0502149D0 (en) 2005-02-02 2005-03-09 Boc Group Inc Method of operating a pumping system
US7341943B2 (en) 2005-02-08 2008-03-11 Taiwan Semiconductor Manufacturing Co., Ltd. Post etch copper cleaning using dry plasma
US20060183270A1 (en) 2005-02-14 2006-08-17 Tessera, Inc. Tools and methods for forming conductive bumps on microelectronic elements
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
US7344912B1 (en) 2005-03-01 2008-03-18 Spansion Llc Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene)
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006261217A (ja) 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
US7253118B2 (en) 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
JP4518986B2 (ja) 2005-03-17 2010-08-04 東京エレクトロン株式会社 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体
US7514353B2 (en) 2005-03-18 2009-04-07 Applied Materials, Inc. Contact metallization scheme using a barrier layer over a silicide layer
TW200734482A (en) 2005-03-18 2007-09-16 Applied Materials Inc Electroless deposition process on a contact containing silicon or silicide
KR100681390B1 (ko) 2005-03-18 2007-02-09 (주)한빛레이저 레이저빔의 초점위치를 임의의 3차원으로 고속이동 시킬 수 있는 광집속장치와 광편향장치를 이용한 반도체웨이퍼의 레이저 다이싱 및 스크라이빙 방법
US20060210723A1 (en) 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7435454B2 (en) 2005-03-21 2008-10-14 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
KR100610465B1 (ko) 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US7611944B2 (en) 2005-03-28 2009-11-03 Micron Technology, Inc. Integrated circuit fabrication
US7442274B2 (en) 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
US20060215347A1 (en) 2005-03-28 2006-09-28 Tokyo Electron Limited Processing apparatus and recording medium
KR100689826B1 (ko) 2005-03-29 2007-03-08 삼성전자주식회사 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들
JP4860167B2 (ja) 2005-03-30 2012-01-25 東京エレクトロン株式会社 ロードロック装置，処理システム及び処理方法
US7789962B2 (en) 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
US20060228889A1 (en) 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
JP2006303309A (ja) 2005-04-22 2006-11-02 Hitachi High-Technologies Corp プラズマ処理装置
US7288482B2 (en) 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
KR100745067B1 (ko) 2005-05-18 2007-08-01 주식회사 하이닉스반도체 반도체 소자의 트렌치 소자분리막 및 그 형성방법
KR100731164B1 (ko) 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20060266288A1 (en) 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
KR100676203B1 (ko) 2005-06-21 2007-01-30 삼성전자주식회사 반도체 설비용 정전 척의 냉각 장치
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
KR100915722B1 (ko) 2005-06-23 2009-09-04 도쿄엘렉트론가부시키가이샤 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치
TW200721363A (en) 2005-07-25 2007-06-01 Sumitomo Electric Industries Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit
JP4554461B2 (ja) 2005-07-26 2010-09-29 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
WO2007016013A2 (en) 2005-07-27 2007-02-08 Applied Materials, Inc. Unique passivation technique for a cvd blocker plate to prevent particle formation
US8366829B2 (en) 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
JP5213150B2 (ja) 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法
US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7833381B2 (en) 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
DE102006038885B4 (de) 2005-08-24 2013-10-10 Wonik Ips Co., Ltd. Verfahren zum Abscheiden einer Ge-Sb-Te-Dünnschicht
EP2270834B9 (en) 2005-09-06 2013-07-10 Carl Zeiss SMT GmbH Particle-optical component
US20070056925A1 (en) 2005-09-09 2007-03-15 Lam Research Corporation Selective etch of films with high dielectric constant with H2 addition
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
WO2007035880A2 (en) 2005-09-21 2007-03-29 Applied Materials, Inc. Method and apparatus for forming device features in an integrated electroless deposition system
US7718030B2 (en) 2005-09-23 2010-05-18 Tokyo Electron Limited Method and system for controlling radical distribution
JP4823628B2 (ja) 2005-09-26 2011-11-24 東京エレクトロン株式会社 基板処理方法および記録媒体
DE102005047081B4 (de) 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
US8102123B2 (en) 2005-10-04 2012-01-24 Topanga Technologies, Inc. External resonator electrode-less plasma lamp and method of exciting with radio-frequency energy
US7438534B2 (en) 2005-10-07 2008-10-21 Edwards Vacuum, Inc. Wide range pressure control using turbo pump
US8772214B2 (en) 2005-10-14 2014-07-08 Air Products And Chemicals, Inc. Aqueous cleaning composition for removing residues and method using same
KR100703014B1 (ko) 2005-10-26 2007-04-06 삼성전자주식회사 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법
EP1780779A3 (en) 2005-10-28 2008-06-11 Interuniversitair Microelektronica Centrum ( Imec) A plasma for patterning advanced gate stacks
US7884032B2 (en) 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US20070099806A1 (en) 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
US7696101B2 (en) 2005-11-01 2010-04-13 Micron Technology, Inc. Process for increasing feature density during the manufacture of a semiconductor device
US20070119371A1 (en) 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US20070107750A1 (en) 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
JP4918778B2 (ja) 2005-11-16 2012-04-18 株式会社日立製作所 半導体集積回路装置の製造方法
US20070117396A1 (en) 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US7704887B2 (en) 2005-11-22 2010-04-27 Applied Materials, Inc. Remote plasma pre-clean with low hydrogen pressure
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
KR100663668B1 (ko) 2005-12-07 2007-01-09 주식회사 뉴파워 프라즈마 복수의 기판을 병렬 배치 처리하기 위한 플라즈마 처리장치
US7662723B2 (en) 2005-12-13 2010-02-16 Lam Research Corporation Methods and apparatus for in-situ substrate processing
US7405160B2 (en) 2005-12-13 2008-07-29 Tokyo Electron Limited Method of making semiconductor device
JP2007173383A (ja) 2005-12-20 2007-07-05 Sharp Corp トレンチ素子分離領域の形成方法、窒化シリコン膜ライナーの形成方法、半導体装置の製造方法
JP4344949B2 (ja) 2005-12-27 2009-10-14 セイコーエプソン株式会社 シャワーヘッド、シャワーヘッドを含む成膜装置、ならびに強誘電体膜の製造方法
US7449538B2 (en) 2005-12-30 2008-11-11 Hynix Semiconductor Inc. Hard mask composition and method for manufacturing semiconductor device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
KR100712727B1 (ko) 2006-01-26 2007-05-04 주식회사 아토 절연체를 이용한 샤워헤드
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
US20070169703A1 (en) 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US8173228B2 (en) 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US7494545B2 (en) 2006-02-03 2009-02-24 Applied Materials, Inc. Epitaxial deposition process and apparatus
KR100785164B1 (ko) 2006-02-04 2007-12-11 위순임 다중 출력 원격 플라즈마 발생기 및 이를 구비한 기판 처리시스템
KR100678696B1 (ko) 2006-02-08 2007-02-06 주식회사 뉴파워 프라즈마 환형 플라즈마를 형성하기 위한 페라이트 코어 조립체를구비한 자기 강화된 플라즈마 소오스
KR100752622B1 (ko) 2006-02-17 2007-08-30 한양대학교 산학협력단 원거리 플라즈마 발생장치
CN101378850A (zh) 2006-02-21 2009-03-04 应用材料股份有限公司 加强用于介电膜层的远程等离子体源清洁
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7713430B2 (en) 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7520969B2 (en) 2006-03-07 2009-04-21 Applied Materials, Inc. Notched deposition ring
CA2644356A1 (en) 2006-03-16 2007-09-27 Novartis Ag Heterocyclic organic compounds for the treatment of in particular melanoma
US7381651B2 (en) 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US7977245B2 (en) 2006-03-22 2011-07-12 Applied Materials, Inc. Methods for etching a dielectric barrier layer with high selectivity
US7628574B2 (en) 2006-03-28 2009-12-08 Arcus Technology, Inc. Apparatus and method for processing substrates using one or more vacuum transfer chamber units
US8343280B2 (en) 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7743731B2 (en) 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US7906032B2 (en) 2006-03-31 2011-03-15 Tokyo Electron Limited Method for conditioning a process chamber
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
JP5042517B2 (ja) 2006-04-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN100539080C (zh) 2006-04-12 2009-09-09 中芯国际集成电路制造(上海)有限公司 通过自对准形成多晶硅浮栅结构的方法
US20070243714A1 (en) 2006-04-18 2007-10-18 Applied Materials, Inc. Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step
US7488685B2 (en) 2006-04-25 2009-02-10 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
SG171606A1 (en) 2006-04-26 2011-06-29 Advanced Tech Materials Cleaning of semiconductor processing systems
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070254169A1 (en) 2006-04-28 2007-11-01 Kamins Theodore I Structures including organic self-assembled monolayers and methods of making the structures
US7541292B2 (en) 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
US7297564B1 (en) 2006-05-02 2007-11-20 Sharp Laboratories Of America, Inc. Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
US7601607B2 (en) 2006-05-15 2009-10-13 Chartered Semiconductor Manufacturing, Ltd. Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
JP5578389B2 (ja) 2006-05-16 2014-08-27 Ｎｌｔテクノロジー株式会社 積層膜パターン形成方法及びゲート電極形成方法
JP2007311540A (ja) 2006-05-18 2007-11-29 Renesas Technology Corp 半導体装置の製造方法
US20070266946A1 (en) 2006-05-22 2007-11-22 Byung-Chul Choi Semiconductor device manufacturing apparatus and method of using the same
JP5119609B2 (ja) 2006-05-25 2013-01-16 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体、並びに半導体装置
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070281106A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20070277734A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7777152B2 (en) 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
JP5069427B2 (ja) 2006-06-13 2012-11-07 北陸成型工業株式会社 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
US7932181B2 (en) 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
JP5045000B2 (ja) * 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
US20070296967A1 (en) 2006-06-27 2007-12-27 Bhupendra Kumra Gupta Analysis of component for presence, composition and/or thickness of coating
US8114781B2 (en) 2006-06-29 2012-02-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7618889B2 (en) 2006-07-18 2009-11-17 Applied Materials, Inc. Dual damascene fabrication with low k materials
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US20080029032A1 (en) 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
GB0615343D0 (en) 2006-08-02 2006-09-13 Point 35 Microstructures Ltd Improved etch process
KR20080013174A (ko) 2006-08-07 2008-02-13 주식회사 하이닉스반도체 캐패시터의 스토리지노드 분리 방법
GB0616131D0 (en) 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US20080124937A1 (en) 2006-08-16 2008-05-29 Songlin Xu Selective etching method and apparatus
KR100761757B1 (ko) 2006-08-17 2007-09-28 삼성전자주식회사 막 형성 방법
KR100818708B1 (ko) 2006-08-18 2008-04-01 주식회사 하이닉스반도체 표면 세정을 포함하는 반도체소자 제조방법
US20080063810A1 (en) 2006-08-23 2008-03-13 Applied Materials, Inc. In-situ process state monitoring of chamber
US7575007B2 (en) 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
US8110787B1 (en) 2006-08-23 2012-02-07 ON Semiconductor Trading, Ltd Image sensor with a reflective waveguide
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US20080063798A1 (en) 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US7452766B2 (en) 2006-08-31 2008-11-18 Micron Technology, Inc. Finned memory cells and the fabrication thereof
US7517804B2 (en) 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
KR100849929B1 (ko) * 2006-09-16 2008-08-26 주식회사 피에조닉스 반응 기체의 분사 속도를 적극적으로 조절하는 샤워헤드를구비한 화학기상 증착 방법 및 장치
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US20080075668A1 (en) 2006-09-27 2008-03-27 Goldstein Alan H Security Device Using Reversibly Self-Assembling Systems
US7476291B2 (en) 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
CN101153396B (zh) 2006-09-30 2010-06-09 中芯国际集成电路制造(上海)有限公司 等离子刻蚀方法
US7589950B2 (en) 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
JP2008103645A (ja) 2006-10-20 2008-05-01 Toshiba Corp 半導体装置の製造方法
US20080099147A1 (en) * 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
US7655571B2 (en) 2006-10-26 2010-02-02 Applied Materials, Inc. Integrated method and apparatus for efficient removal of halogen residues from etched substrates
JP2008109043A (ja) 2006-10-27 2008-05-08 Oki Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US8002946B2 (en) 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US20080102640A1 (en) 2006-10-30 2008-05-01 Applied Materials, Inc. Etching oxide with high selectivity to titanium nitride
US7909961B2 (en) 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7880232B2 (en) 2006-11-01 2011-02-01 Micron Technology, Inc. Processes and apparatus having a semiconductor fin
US7725974B2 (en) 2006-11-02 2010-06-01 Hughes Randall L Shoe and foot cleaning and disinfecting system
US7700479B2 (en) 2006-11-06 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning processes in the formation of integrated circuit interconnect structures
US20080178805A1 (en) 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US7939422B2 (en) 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
US20080142483A1 (en) 2006-12-07 2008-06-19 Applied Materials, Inc. Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
CN101542693A (zh) 2006-12-11 2009-09-23 应用材料股份有限公司 干式光阻剥除方法及设备
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
TWM318795U (en) 2006-12-18 2007-09-11 Lighthouse Technology Co Ltd Package structure
US20100059889A1 (en) 2006-12-20 2010-03-11 Nxp, B.V. Adhesion of diffusion barrier on copper-containing interconnect element
US8043430B2 (en) 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US7922863B2 (en) 2006-12-22 2011-04-12 Applied Materials, Inc. Apparatus for integrated gas and radiation delivery
JP5229711B2 (ja) 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
US20080156631A1 (en) 2006-12-27 2008-07-03 Novellus Systems, Inc. Methods of Producing Plasma in a Container
JP2008163430A (ja) 2006-12-28 2008-07-17 Jtekt Corp 高耐食性部材およびその製造方法
US20080157225A1 (en) 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
US7808053B2 (en) 2006-12-29 2010-10-05 Intel Corporation Method, apparatus, and system for flash memory
KR20080063988A (ko) 2007-01-03 2008-07-08 삼성전자주식회사 중성빔을 이용한 식각장치
US8097105B2 (en) 2007-01-11 2012-01-17 Lam Research Corporation Extending lifetime of yttrium oxide as a plasma chamber material
JP5168907B2 (ja) 2007-01-15 2013-03-27 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP4421618B2 (ja) 2007-01-17 2010-02-24 東京エレクトロン株式会社 フィン型電界効果トランジスタの製造方法
US7728364B2 (en) 2007-01-19 2010-06-01 International Business Machines Corporation Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
US8444926B2 (en) 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
KR100878015B1 (ko) 2007-01-31 2009-01-13 삼성전자주식회사 산화물 제거 방법 및 이를 이용한 트렌치 매립 방법
JP5048352B2 (ja) 2007-01-31 2012-10-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR100843236B1 (ko) 2007-02-06 2008-07-03 삼성전자주식회사 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법
JP2008205219A (ja) 2007-02-20 2008-09-04 Masato Toshima シャワーヘッドおよびこれを用いたｃｖｄ装置
US20080202892A1 (en) 2007-02-27 2008-08-28 Smith John M Stacked process chambers for substrate vacuum processing tool
CN100577866C (zh) 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US20080216901A1 (en) 2007-03-06 2008-09-11 Mks Instruments, Inc. Pressure control for vacuum processing system
US20080216958A1 (en) 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
JP4833890B2 (ja) 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
WO2008112673A2 (en) 2007-03-12 2008-09-18 Tokyo Electron Limited Dynamic temperature backside gas control for improved within-substrate processing uniformity
US7576018B2 (en) 2007-03-12 2009-08-18 Tokyo Electron Limited Method for flexing a substrate during processing
KR100853485B1 (ko) 2007-03-19 2008-08-21 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조 방법
US20080233709A1 (en) 2007-03-22 2008-09-25 Infineon Technologies North America Corp. Method for removing material from a semiconductor
US7815814B2 (en) 2007-03-23 2010-10-19 Tokyo Electron Limited Method and system for dry etching a metal nitride
WO2008123060A1 (ja) 2007-03-28 2008-10-16 Canon Anelva Corporation 真空処理装置
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
JP4988402B2 (ja) 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP5179476B2 (ja) 2007-04-17 2013-04-10 株式会社アルバック 成膜装置
JP5282419B2 (ja) 2007-04-18 2013-09-04 ソニー株式会社 半導体装置及びその製造方法
JP5135879B2 (ja) 2007-05-21 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
KR100777043B1 (ko) 2007-05-22 2007-11-16 주식회사 테스 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
US8084105B2 (en) 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
JP2008305871A (ja) 2007-06-05 2008-12-18 Spansion Llc 半導体装置およびその製造方法
KR20080111627A (ko) 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 공정장치 및 그 방법
US20090004873A1 (en) 2007-06-26 2009-01-01 Intevac, Inc. Hybrid etch chamber with decoupled plasma controls
JP5008478B2 (ja) 2007-06-27 2012-08-22 東京エレクトロン株式会社 基板処理装置およびシャワーヘッド
US7585716B2 (en) 2007-06-27 2009-09-08 International Business Machines Corporation High-k/metal gate MOSFET with reduced parasitic capacitance
KR100877107B1 (ko) 2007-06-28 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성방법
TWI479559B (zh) 2007-06-28 2015-04-01 Quantum Global Tech Llc 以選擇性噴灑蝕刻來清潔腔室部件的方法和設備
JP4438008B2 (ja) 2007-06-29 2010-03-24 東京エレクトロン株式会社 基板処理装置
KR101050454B1 (ko) 2007-07-02 2011-07-19 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 및 그 형성방법
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
US8197636B2 (en) 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
JP5047881B2 (ja) 2007-07-13 2012-10-10 東京応化工業株式会社 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
JP5660753B2 (ja) 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
WO2009010909A1 (en) 2007-07-19 2009-01-22 Koninklijke Philips Electronics N.V. Method, system and device for transmitting lighting device data
DE102007033685A1 (de) 2007-07-19 2009-01-22 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Silizium-Halbleitersubstrat
JP5077659B2 (ja) 2007-07-20 2012-11-21 ニチアス株式会社 触媒コンバーター及び触媒コンバーター用保持材
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US8108981B2 (en) 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
EP2042516A1 (en) 2007-09-27 2009-04-01 Protaffin Biotechnologie AG Glycosaminoglycan-antagonising MCP-1 mutants and methods of using same
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
JP5251033B2 (ja) 2007-08-14 2013-07-31 ソニー株式会社 半導体装置の製造方法
JP4160104B1 (ja) 2007-08-16 2008-10-01 株式会社アルバック アッシング装置
WO2009025392A2 (en) 2007-08-21 2009-02-26 Panasonic Corporation Plasma processing device and method of monitoring plasma discharge state in plasma processing device
US8202393B2 (en) * 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
US8765589B2 (en) 2007-08-31 2014-07-01 Tokyo Electron Limited Semiconductor device manufacturing method
TWI459851B (zh) 2007-09-10 2014-11-01 Ngk Insulators Ltd heating equipment
JP5148955B2 (ja) 2007-09-11 2013-02-20 東京エレクトロン株式会社 基板載置機構及び基板処理装置
JP5347294B2 (ja) * 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5169097B2 (ja) 2007-09-14 2013-03-27 住友電気工業株式会社 半導体装置の製造装置および製造方法
US20120122319A1 (en) 2007-09-19 2012-05-17 Hironobu Shimizu Coating method for coating reaction tube prior to film forming process
US7781332B2 (en) 2007-09-19 2010-08-24 International Business Machines Corporation Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer
JP5194125B2 (ja) * 2007-09-25 2013-05-08 ラム リサーチ コーポレーション シャワーヘッド電極アセンブリ用の温度制御モジュール、シャワーヘッド電極アセンブリ及びシャワーヘッド電極アセンブリの上部電極の温度を制御する方法
JP2009088229A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 成膜装置、成膜方法、記憶媒体及びガス供給装置
KR101070292B1 (ko) 2007-09-28 2011-10-06 주식회사 하이닉스반도체 반도체장치의 리세스게이트 제조 방법
US20090084317A1 (en) * 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US8298931B2 (en) 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
JP2011500961A (ja) * 2007-10-11 2011-01-06 バレンス プロセス イクウィップメント，インコーポレイテッド 化学気相成長反応器
US7838390B2 (en) 2007-10-12 2010-11-23 Samsung Electronics Co., Ltd. Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein
US20090095222A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
JP4865672B2 (ja) * 2007-10-22 2012-02-01 シャープ株式会社 気相成長装置及び半導体素子の製造方法
US7871926B2 (en) 2007-10-22 2011-01-18 Applied Materials, Inc. Methods and systems for forming at least one dielectric layer
CN101889329B (zh) 2007-10-31 2012-07-04 朗姆研究公司 长寿命可消耗氮化硅-二氧化硅等离子处理部件
US8668775B2 (en) 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
KR101508026B1 (ko) 2007-10-31 2015-04-08 램 리써치 코포레이션 컴포넌트 바디와 액체 냉각제 사이의 열 전도도를 제어하기 위해 가스 압력을 이용하는 온도 제어 모듈
US20100243165A1 (en) 2007-11-01 2010-09-30 Pyung-Yong Um Apparatus for surface-treating wafer using high-frequency inductively-coupled plasma
JP5006938B2 (ja) 2007-11-02 2012-08-22 キヤノンアネルバ株式会社 表面処理装置およびその基板処理方法
JP5192214B2 (ja) 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
JP5150217B2 (ja) 2007-11-08 2013-02-20 東京エレクトロン株式会社 シャワープレート及び基板処理装置
CN104037065A (zh) 2007-11-08 2014-09-10 朗姆研究公司 使用氧化物垫片减小节距
US7964040B2 (en) 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US20090120364A1 (en) 2007-11-09 2009-05-14 Applied Materials, Inc. Gas mixing swirl insert assembly
JP5172617B2 (ja) * 2007-11-12 2013-03-27 シャープ株式会社 気相成長装置及び気相成長方法
US7704849B2 (en) 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
AU2008333222A1 (en) 2007-12-04 2009-06-11 Parabel Ag Multilayer solar element
FR2924501B1 (fr) 2007-12-04 2010-02-05 Commissariat Energie Atomique Procede de reglage d'un circuit d'excitation et detection pour resonance magnetique nucleaire et circuit d'excitation et detection adapte a la mise en oeuvre d'un tel procede
JP5142692B2 (ja) 2007-12-11 2013-02-13 株式会社東芝 不揮発性半導体記憶装置
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
JP2009170890A (ja) 2007-12-18 2009-07-30 Takashima & Co Ltd 可撓性膜状太陽電池複層体
US8512509B2 (en) * 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
US20090159213A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
WO2009086013A2 (en) 2007-12-21 2009-07-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US8129029B2 (en) 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
JP4974873B2 (ja) 2007-12-26 2012-07-11 新光電気工業株式会社 静電チャック及び基板温調固定装置
US20090170331A1 (en) 2007-12-27 2009-07-02 International Business Machines Corporation Method of forming a bottle-shaped trench by ion implantation
TWI427697B (zh) 2007-12-28 2014-02-21 Tokyo Electron Ltd 金屬膜及金屬氧化膜之蝕刻方法與半導體裝置之製造方法
US7910477B2 (en) 2007-12-28 2011-03-22 Texas Instruments Incorporated Etch residue reduction by ash methodology
JP2009170509A (ja) 2008-01-11 2009-07-30 Hitachi High-Technologies Corp ヒータ内蔵静電チャックを備えたプラズマ処理装置
US8018023B2 (en) 2008-01-14 2011-09-13 Kabushiki Kaisha Toshiba Trench sidewall protection by a carbon-rich layer in a semiconductor device
US7998864B2 (en) 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
US20090191711A1 (en) 2008-01-30 2009-07-30 Ying Rui Hardmask open process with enhanced cd space shrink and reduction
TW200933812A (en) 2008-01-30 2009-08-01 Promos Technologies Inc Process for forming trench isolation structure and semiconductor device produced thereby
US20090194810A1 (en) 2008-01-31 2009-08-06 Masahiro Kiyotoshi Semiconductor device using element isolation region of trench isolation structure and manufacturing method thereof
CN101911253B (zh) 2008-01-31 2012-08-22 应用材料公司 闭环mocvd沉积控制
JP5224837B2 (ja) 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5250279B2 (ja) 2008-02-23 2013-07-31 東京エレクトロン株式会社 プローブ装置
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
KR101259484B1 (ko) 2008-02-26 2013-05-06 쿄세라 코포레이션 웨이퍼 지지 부재와 그 제조 방법, 및 이것을 사용한 정전 척
US8066895B2 (en) 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
US8075728B2 (en) 2008-02-28 2011-12-13 Applied Materials, Inc. Gas flow equalizer plate suitable for use in a substrate process chamber
US8336891B2 (en) 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
US7906818B2 (en) 2008-03-13 2011-03-15 Micron Technology, Inc. Memory array with a pair of memory-cell strings to a single conductive pillar
JP5188849B2 (ja) 2008-03-14 2013-04-24 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
US7915597B2 (en) 2008-03-18 2011-03-29 Axcelis Technologies, Inc. Extraction electrode system for high current ion implanter
JP5179389B2 (ja) 2008-03-19 2013-04-10 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
US9520275B2 (en) 2008-03-21 2016-12-13 Tokyo Electron Limited Mono-energetic neutral beam activated chemical processing system and method of using
JP5264231B2 (ja) 2008-03-21 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US20110011341A1 (en) 2008-03-24 2011-01-20 Tokyo Electron Limited Shower plate and plasma processing device using the same
JP5352103B2 (ja) 2008-03-27 2013-11-27 東京エレクトロン株式会社 熱処理装置および処理システム
DE102008016425B4 (de) 2008-03-31 2015-11-19 Advanced Micro Devices, Inc. Verfahren zur Strukturierung einer Metallisierungsschicht durch Verringerung der durch Lackentfernung hervorgerufenen Schäden des dielektrischen Materials
JP5026326B2 (ja) 2008-04-04 2012-09-12 株式会社日立ハイテクノロジーズ エッチング処理状態の判定方法、システム
US20090258162A1 (en) 2008-04-12 2009-10-15 Applied Materials, Inc. Plasma processing apparatus and method
JP2009266952A (ja) 2008-04-23 2009-11-12 Seiko Epson Corp デバイスの製造方法及び製造装置
US7977246B2 (en) 2008-04-25 2011-07-12 Applied Materials, Inc. Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
CN102017057B (zh) 2008-05-02 2012-11-28 欧瑞康太阳能股份公司(特吕巴赫) 用于基板的等离子体辅助处理的等离子体处理装置和方法
US8398777B2 (en) 2008-05-02 2013-03-19 Applied Materials, Inc. System and method for pedestal adjustment
US20090274590A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
US20090275206A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
KR100999182B1 (ko) 2008-05-20 2010-12-08 주식회사 뉴파워 프라즈마 내장 변압기를 갖는 플라즈마 반응기
KR100998011B1 (ko) * 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치
KR101006848B1 (ko) 2008-05-28 2011-01-14 주식회사 코미코 기판 지지 장치 및 이를 포함하는 기판 처리 장치
DE102008026134A1 (de) 2008-05-30 2009-12-17 Advanced Micro Devices, Inc., Sunnyvale Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen
US7754601B2 (en) 2008-06-03 2010-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor interconnect air gap formation process
US20090302005A1 (en) 2008-06-04 2009-12-10 General Electric Company Processes for texturing a surface prior to electroless plating
KR20090128913A (ko) 2008-06-11 2009-12-16 성균관대학교산학협력단 태양전지용 실리콘 기판의 텍스처링 장치 및 그 방법
US7699935B2 (en) 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
JP2010003826A (ja) 2008-06-19 2010-01-07 Toshiba Corp 半導体装置の製造方法
US8607731B2 (en) 2008-06-23 2013-12-17 Applied Materials, Inc. Cathode with inner and outer electrodes at different heights
JP5222040B2 (ja) 2008-06-25 2013-06-26 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
CN101932750B (zh) 2008-06-27 2014-05-07 三菱重工业株式会社 真空处理装置及真空处理装置的运转方法
JP5211332B2 (ja) 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8161906B2 (en) * 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8206506B2 (en) * 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8419960B2 (en) 2008-07-11 2013-04-16 Tokyo Electron Limited Plasma processing apparatus and method
KR20110036933A (ko) 2008-07-11 2011-04-12 어플라이드 머티어리얼스, 인코포레이티드 Ｃｖｄ 적용을 위한 챔버 구성요소
WO2010008021A1 (ja) 2008-07-15 2010-01-21 キヤノンアネルバ株式会社 プラズマ処理方法及びプラズマ処理装置
US8336188B2 (en) 2008-07-17 2012-12-25 Formfactor, Inc. Thin wafer chuck
US20140034239A1 (en) 2008-07-23 2014-02-06 Applied Materials, Inc. Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP2011253832A (ja) 2008-07-24 2011-12-15 Canon Anelva Corp レジストトリミング方法及びトリミング装置
KR20100013980A (ko) 2008-08-01 2010-02-10 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US20100025370A1 (en) 2008-08-04 2010-02-04 Applied Materials, Inc. Reactive gas distributor, reactive gas treatment system, and reactive gas treatment method
WO2010019430A2 (en) 2008-08-12 2010-02-18 Applied Materials, Inc. Electrostatic chuck assembly
US7882808B2 (en) 2008-08-20 2011-02-08 Crazy K Poultry + Livestock, LLC Protective hen apron
EP2324687B1 (en) 2008-08-20 2016-01-27 Vision Dynamics Holding B.V. Device for generating a plasma discharge for patterning the surface of a substrate
US8268729B2 (en) 2008-08-21 2012-09-18 International Business Machines Corporation Smooth and vertical semiconductor fin structure
JP2010047818A (ja) 2008-08-25 2010-03-04 Toshiba Corp 半導体製造装置および半導体製造方法
KR100997502B1 (ko) 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
KR101025741B1 (ko) 2008-09-02 2011-04-04 주식회사 하이닉스반도체 수직 채널 트랜지스터의 활성필라 제조방법
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US8168268B2 (en) 2008-12-12 2012-05-01 Ovishinsky Innovation, LLC Thin film deposition via a spatially-coordinated and time-synchronized process
US7709396B2 (en) 2008-09-19 2010-05-04 Applied Materials, Inc. Integral patterning of large features along with array using spacer mask patterning process flow
JP5295833B2 (ja) 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
JP2010080846A (ja) 2008-09-29 2010-04-08 Tokyo Electron Ltd ドライエッチング方法
US20100081285A1 (en) 2008-09-30 2010-04-01 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties
US8093116B2 (en) 2008-10-06 2012-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for N/P patterning in a gate last process
US7968441B2 (en) 2008-10-08 2011-06-28 Applied Materials, Inc. Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage
US7928003B2 (en) 2008-10-10 2011-04-19 Applied Materials, Inc. Air gap interconnects using carbon-based films
US8105465B2 (en) 2008-10-14 2012-01-31 Applied Materials, Inc. Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD)
US8563090B2 (en) 2008-10-16 2013-10-22 Applied Materials, Inc. Boron film interface engineering
US7910491B2 (en) 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US8207470B2 (en) 2008-10-20 2012-06-26 Industry-University Cooperation Foundation Hanyang University Apparatus for generating remote plasma
US20100099263A1 (en) 2008-10-20 2010-04-22 Applied Materials, Inc. Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
WO2010048076A2 (en) 2008-10-21 2010-04-29 Applied Materials, Inc. Plasma source for chamber cleaning and process
US8173547B2 (en) 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20100101727A1 (en) 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range
JP5396065B2 (ja) 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
US8206829B2 (en) 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US8043933B2 (en) 2008-11-24 2011-10-25 Applied Materials, Inc. Integration sequences with top surface profile modification
JP5358165B2 (ja) 2008-11-26 2013-12-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US20100144140A1 (en) 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US20100147219A1 (en) 2008-12-12 2010-06-17 Jui Hai Hsieh High temperature and high voltage electrode assembly design
US8869741B2 (en) 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8540844B2 (en) 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
KR20100074508A (ko) 2008-12-24 2010-07-02 주식회사 동부하이텍 반도체 소자의 제조 방법
JP2010154699A (ja) 2008-12-26 2010-07-08 Hitachi Ltd 磁束可変型回転電機
US8293013B2 (en) 2008-12-30 2012-10-23 Intermolecular, Inc. Dual path gas distribution device
US7749917B1 (en) 2008-12-31 2010-07-06 Applied Materials, Inc. Dry cleaning of silicon surface for solar cell applications
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101587601B1 (ko) 2009-01-14 2016-01-25 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US20100187694A1 (en) 2009-01-28 2010-07-29 Chen-Hua Yu Through-Silicon Via Sidewall Isolation Structure
US7964517B2 (en) 2009-01-29 2011-06-21 Texas Instruments Incorporated Use of a biased precoat for reduced first wafer defects in high-density plasma process
KR20100087915A (ko) 2009-01-29 2010-08-06 삼성전자주식회사 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법
KR101795658B1 (ko) 2009-01-31 2017-11-08 어플라이드 머티어리얼스, 인코포레이티드 에칭을 위한 방법 및 장치
KR101527195B1 (ko) 2009-02-02 2015-06-10 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
JP5210191B2 (ja) 2009-02-03 2013-06-12 東京エレクトロン株式会社 窒化珪素膜のドライエッチング方法
JP2010180458A (ja) 2009-02-06 2010-08-19 Kit:Kk アルミニウム表面の酸化層形成方法及び半導体装置の製造方法
CN102365906B (zh) 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
KR101566922B1 (ko) 2009-02-16 2015-11-09 삼성전자주식회사 저스트 드라이 에칭과 케미컬 드라이 에칭을 조합한 반도체소자의 금속 실리사이드막 형성 방법
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US20110048325A1 (en) * 2009-03-03 2011-03-03 Sun Hong Choi Gas Distribution Apparatus and Substrate Processing Apparatus Having the Same
US20100224322A1 (en) 2009-03-03 2010-09-09 Applied Materials, Inc. Endpoint detection for a reactor chamber using a remote plasma chamber
KR20100099535A (ko) 2009-03-03 2010-09-13 주성엔지니어링(주) 기판처리장치 및 그의 제조방법
JP2012519956A (ja) * 2009-03-03 2012-08-30 ジュソン エンジニアリング カンパニー リミテッド ガス分配装置およびこれを備える基板処理装置
US9378930B2 (en) 2009-03-05 2016-06-28 Applied Materials, Inc. Inductively coupled plasma reactor having RF phase control and methods of use thereof
JP5262878B2 (ja) 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
EP2409313A1 (de) 2009-03-17 2012-01-25 Roth & Rau AG Substratbearbeitungsanlage und substratbearbeitungsverfahren
KR101539699B1 (ko) 2009-03-19 2015-07-27 삼성전자주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법
US8312839B2 (en) 2009-03-24 2012-11-20 Applied Materials, Inc. Mixing frequency at multiple feeding points
US8382999B2 (en) 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5657262B2 (ja) 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5501807B2 (ja) 2009-03-31 2014-05-28 東京エレクトロン株式会社 処理装置
KR101534357B1 (ko) 2009-03-31 2015-07-06 도쿄엘렉트론가부시키가이샤 기판 지지 장치 및 기판 지지 방법
US8026179B2 (en) 2009-04-09 2011-09-27 Macronix International Co., Ltd. Patterning method and integrated circuit structure
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US20100263588A1 (en) 2009-04-15 2010-10-21 Gan Zhiyin Methods and apparatus for epitaxial growth of semiconductor materials
WO2010123707A2 (en) 2009-04-20 2010-10-28 Applied Materials, Inc. Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
US9431237B2 (en) 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
SG174993A1 (en) 2009-04-21 2011-11-28 Applied Materials Inc Cvd apparatus for improved film thickness non-uniformity and particle performance
US8110889B2 (en) 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
US8623141B2 (en) 2009-05-18 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Piping system and control for semiconductor processing
KR101064210B1 (ko) * 2009-06-01 2011-09-14 한국생산기술연구원 막증착 진공장비용 샤워헤드
KR101360876B1 (ko) 2009-06-03 2014-02-11 어플라이드 머티어리얼스, 인코포레이티드 식각을 위한 방법 및 장치
US8753447B2 (en) 2009-06-10 2014-06-17 Novellus Systems, Inc. Heat shield for heater in semiconductor processing apparatus
US8492292B2 (en) 2009-06-29 2013-07-23 Applied Materials, Inc. Methods of forming oxide layers on substrates
WO2011009002A2 (en) * 2009-07-15 2011-01-20 Applied Materials, Inc. Flow control features of cvd chambers
US8440061B2 (en) 2009-07-20 2013-05-14 Lam Research Corporation System and method for plasma arc detection, isolation and prevention
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US7935643B2 (en) 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
KR101095119B1 (ko) 2009-08-19 2011-12-16 삼성전기주식회사 다이 패키지 및 그 제조방법
US9299539B2 (en) 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
JP2013503414A (ja) 2009-08-26 2013-01-31 ビーコ・インスツルメンツ・インコーポレーテッド 磁気記録媒体上にパターンを製造するためのシステム
CN102414801A (zh) * 2009-08-27 2012-04-11 应用材料公司 在原位腔室清洁后的处理腔室去污方法
US8211808B2 (en) 2009-08-31 2012-07-03 Applied Materials, Inc. Silicon-selective dry etch for carbon-containing films
WO2011027515A1 (ja) 2009-09-02 2011-03-10 積水化学工業株式会社 シリコン含有膜のエッチング方法
US20120171852A1 (en) 2009-09-04 2012-07-05 Applied Materials, Inc Remote hydrogen plasma source of silicon containing film deposition
US20110073136A1 (en) 2009-09-10 2011-03-31 Matheson Tri-Gas, Inc. Removal of gallium and gallium containing materials
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5648349B2 (ja) 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
US8329587B2 (en) 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
US9449859B2 (en) 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
TWI430714B (zh) 2009-10-15 2014-03-11 Orbotech Lt Solar Llc 電漿處理腔之噴撒頭組件及電漿處理腔之噴撒頭組件之氣體電離板之製備方法
EP2315028A1 (en) 2009-10-26 2011-04-27 Atlas Antibodies AB PODXL protein in colorectal cancer
KR101757922B1 (ko) 2009-10-27 2017-07-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR101928402B1 (ko) 2009-10-30 2018-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
CN102598131B (zh) 2009-11-04 2016-04-13 应用材料公司 用于图案化的磁盘媒体应用的等离子体离子注入工艺
JP5257328B2 (ja) 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
WO2011056281A1 (en) 2009-11-06 2011-05-12 Rambus Inc. Three-dimensional memory array stacking structure
US8455364B2 (en) 2009-11-06 2013-06-04 International Business Machines Corporation Sidewall image transfer using the lithographic stack as the mandrel
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
KR20110054840A (ko) 2009-11-18 2011-05-25 주식회사 아토 샤워헤드 어셈블리 및 이를 구비한 박막증착장치
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
WO2011066508A2 (en) 2009-11-30 2011-06-03 Applied Materials, Inc. Chamber for processing hard disk drive substrates
US9540731B2 (en) * 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
US8604697B2 (en) 2009-12-09 2013-12-10 Jehara Corporation Apparatus for generating plasma
WO2011072143A2 (en) 2009-12-09 2011-06-16 Novellus Systems, Inc. Novel gap fill integration
US8202803B2 (en) 2009-12-11 2012-06-19 Tokyo Electron Limited Method to remove capping layer of insulation dielectric in interconnect structures
WO2011070945A1 (ja) 2009-12-11 2011-06-16 株式会社アルバック 薄膜製造装置、薄膜の製造方法、及び半導体装置の製造方法
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20110140229A1 (en) 2009-12-16 2011-06-16 Willy Rachmady Techniques for forming shallow trench isolation
US8274017B2 (en) 2009-12-18 2012-09-25 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8501629B2 (en) 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
JP4927158B2 (ja) 2009-12-25 2012-05-09 東京エレクトロン株式会社 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置
US20110303146A1 (en) 2009-12-28 2011-12-15 Osamu Nishijima Plasma doping apparatus
US8329262B2 (en) 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
JP5710209B2 (ja) 2010-01-18 2015-04-30 東京エレクトロン株式会社 電磁波給電機構およびマイクロ波導入機構
JP5166458B2 (ja) 2010-01-22 2013-03-21 株式会社東芝 半導体装置及びその製造方法
JP5608384B2 (ja) 2010-02-05 2014-10-15 東京エレクトロン株式会社 半導体装置の製造方法及びプラズマエッチング装置
ATE551439T1 (de) 2010-02-08 2012-04-15 Roth & Rau Ag PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE
US8946828B2 (en) 2010-02-09 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having elevated structure and method of manufacturing the same
US8361338B2 (en) 2010-02-11 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask removal method
US20110198034A1 (en) 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
WO2011099650A1 (en) 2010-02-15 2011-08-18 Daikin Industries, Ltd. Water and oil resistant agent for paper and paper treatment process
JP5476152B2 (ja) 2010-02-16 2014-04-23 積水化学工業株式会社 窒化シリコンのエッチング方法及び装置
US8456009B2 (en) 2010-02-18 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having an air-gap region and a method of manufacturing the same
JP5662079B2 (ja) 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
US20110207332A1 (en) 2010-02-25 2011-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film coated process kits for semiconductor manufacturing tools
KR101214758B1 (ko) 2010-02-26 2012-12-21 성균관대학교산학협력단 식각 방법
CN102844848A (zh) 2010-03-05 2012-12-26 应用材料公司 通过自由基成分化学气相沉积的共形层
US9175394B2 (en) 2010-03-12 2015-11-03 Applied Materials, Inc. Atomic layer deposition chamber with multi inject
US8354660B2 (en) 2010-03-16 2013-01-15 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20130012030A1 (en) 2010-03-17 2013-01-10 Applied Materials, Inc. Method and apparatus for remote plasma source assisted silicon-containing film deposition
US8435902B2 (en) 2010-03-17 2013-05-07 Applied Materials, Inc. Invertable pattern loading with dry etch
US8574447B2 (en) 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US20110256421A1 (en) 2010-04-16 2011-10-20 United Technologies Corporation Metallic coating for single crystal alloys
US8551248B2 (en) * 2010-04-19 2013-10-08 Texas Instruments Incorporated Showerhead for CVD depositions
US8288268B2 (en) 2010-04-29 2012-10-16 International Business Machines Corporation Microelectronic structure including air gap
US8475674B2 (en) 2010-04-30 2013-07-02 Applied Materials, Inc. High-temperature selective dry etch having reduced post-etch solid residue
US20110265884A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system with shared vacuum pump
US8562742B2 (en) 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US8721798B2 (en) 2010-04-30 2014-05-13 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
US20110278260A1 (en) 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US8361906B2 (en) 2010-05-20 2013-01-29 Applied Materials, Inc. Ultra high selectivity ashable hard mask film
US20140154668A1 (en) 2010-05-21 2014-06-05 The Trustees Of Princeton University Structures for Enhancement of Local Electric Field, Light Absorption, Light Radiation, Material Detection and Methods for Making and Using of the Same.
JP5567392B2 (ja) 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
JP5751895B2 (ja) 2010-06-08 2015-07-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
US8373239B2 (en) 2010-06-08 2013-02-12 International Business Machines Corporation Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
JP2011258768A (ja) 2010-06-09 2011-12-22 Sumitomo Electric Ind Ltd 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法
US20110304078A1 (en) 2010-06-14 2011-12-15 Applied Materials, Inc. Methods for removing byproducts from load lock chambers
US8928061B2 (en) 2010-06-30 2015-01-06 SanDisk Technologies, Inc. Three dimensional NAND device with silicide containing floating gates
US8349681B2 (en) 2010-06-30 2013-01-08 Sandisk Technologies Inc. Ultrahigh density monolithic, three dimensional vertical NAND memory device
JP5463224B2 (ja) 2010-07-09 2014-04-09 日本発條株式会社 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート
US20120009796A1 (en) 2010-07-09 2012-01-12 Applied Materials, Inc. Post-ash sidewall healing
KR101202352B1 (ko) 2010-07-19 2012-11-16 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
US8338211B2 (en) 2010-07-27 2012-12-25 Amtech Systems, Inc. Systems and methods for charging solar cell layers
US8278203B2 (en) 2010-07-28 2012-10-02 Sandisk Technologies Inc. Metal control gate formation in non-volatile storage
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US20130059448A1 (en) 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US8222125B2 (en) 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies
JP5198611B2 (ja) 2010-08-12 2013-05-15 株式会社東芝 ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
JP2012057251A (ja) 2010-08-13 2012-03-22 Toshiba Corp 保護膜とその形成方法、並びに半導体製造装置およびプラズマ処理装置
WO2012052858A1 (en) 2010-08-16 2012-04-26 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Etching of oxide materials
US8920597B2 (en) * 2010-08-20 2014-12-30 Applied Materials, Inc. Symmetric VHF source for a plasma reactor
US20120017989A1 (en) 2010-08-24 2012-01-26 Pai-Chun Chang Metal and metal oxide surface texturing
KR20120022251A (ko) 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8580699B2 (en) 2010-09-10 2013-11-12 Applied Materials, Inc. Embedded catalyst for atomic layer deposition of silicon oxide
US20120088356A1 (en) 2010-09-14 2012-04-12 Applied Materials, Inc. Integrated platform for in-situ doping and activation of substrates
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8840754B2 (en) 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
WO2012039932A2 (en) 2010-09-21 2012-03-29 Applied Materials, Inc. Methods for forming layers on a substrate
US8633423B2 (en) 2010-10-14 2014-01-21 Applied Materials, Inc. Methods and apparatus for controlling substrate temperature in a process chamber
KR101209003B1 (ko) 2010-10-14 2012-12-06 주식회사 유진테크 3차원 구조의 메모리 소자를 제조하는 방법 및 장치
US8183134B2 (en) 2010-10-19 2012-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
CN103109357B (zh) * 2010-10-19 2016-08-24 应用材料公司 用于紫外线纳米固化腔室的石英喷洒器
US20120097330A1 (en) 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design
US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
WO2012058377A2 (en) 2010-10-29 2012-05-03 Applied Materials, Inc. Methods for etching oxide layers using process gas pulsing
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
US9111994B2 (en) 2010-11-01 2015-08-18 Magnachip Semiconductor, Ltd. Semiconductor device and method of fabricating the same
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
WO2012061593A2 (en) 2010-11-03 2012-05-10 Applied Materials, Inc. Apparatus and methods for deposition of silicon carbide and silicon carbonitride films
US8389416B2 (en) 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
KR20120058962A (ko) 2010-11-30 2012-06-08 삼성전자주식회사 반도체 장치의 제조 방법
US8475103B2 (en) 2010-12-09 2013-07-02 Hamilton Sundstand Corporation Sealing washer assembly for large diameter holes on flat surfaces
US8470713B2 (en) 2010-12-13 2013-06-25 International Business Machines Corporation Nitride etch for improved spacer uniformity
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5728221B2 (ja) 2010-12-24 2015-06-03 東京エレクトロン株式会社 基板処理方法及び記憶媒体
US20120177846A1 (en) 2011-01-07 2012-07-12 Applied Materials, Inc. Radical steam cvd
KR101246170B1 (ko) 2011-01-13 2013-03-25 국제엘렉트릭코리아 주식회사 반도체 제조에 사용되는 분사부재 및 그것을 갖는 플라즈마 처리 장치
KR101529578B1 (ko) 2011-01-14 2015-06-19 성균관대학교산학협력단 플라즈마 기판 처리 장치 및 방법
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9018692B2 (en) 2011-01-19 2015-04-28 Macronix International Co., Ltd. Low cost scalable 3D memory
US8363476B2 (en) 2011-01-19 2013-01-29 Macronix International Co., Ltd. Memory device, manufacturing method and operating method of the same
WO2012098871A1 (ja) 2011-01-20 2012-07-26 東京エレクトロン株式会社 真空処理装置
US8723423B2 (en) 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
US9068265B2 (en) 2011-02-01 2015-06-30 Applied Materials, Inc. Gas distribution plate with discrete protective elements
KR101732936B1 (ko) 2011-02-14 2017-05-08 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
US20120216955A1 (en) 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
US9281207B2 (en) 2011-02-28 2016-03-08 Inpria Corporation Solution processible hardmasks for high resolution lithography
TW201246362A (en) 2011-03-01 2012-11-16 Univ King Abdullah Sci & Tech Silicon germanium mask for deep silicon etching
CN103403852B (zh) 2011-03-01 2016-06-08 应用材料公司 双负载闸配置的消除及剥离处理腔室
WO2012148568A1 (en) 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
EP2681088B1 (en) 2011-03-02 2016-11-23 Game Changers, Llc Air cushion transport
US9441296B2 (en) 2011-03-04 2016-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
FR2972563B1 (fr) 2011-03-07 2013-03-01 Altis Semiconductor Snc Procédé de traitement d'une couche de nitrure de métal oxydée
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US20120238108A1 (en) 2011-03-14 2012-09-20 Applied Materials, Inc. Two-stage ozone cure for dielectric films
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
US8828245B2 (en) 2011-03-22 2014-09-09 Industrial Technology Research Institute Fabricating method of flexible circuit board
KR101884003B1 (ko) * 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 증착 챔버를 위한 라이너 조립체
US9330953B2 (en) 2011-03-23 2016-05-03 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
JP6003011B2 (ja) 2011-03-31 2016-10-05 東京エレクトロン株式会社 基板処理装置
JP5815967B2 (ja) 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
JP5864879B2 (ja) 2011-03-31 2016-02-17 東京エレクトロン株式会社 基板処理装置及びその制御方法
US8460569B2 (en) 2011-04-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Method and system for post-etch treatment of patterned substrate features
US9196463B2 (en) 2011-04-07 2015-11-24 Varian Semiconductor Equipment Associates, Inc. System and method for plasma monitoring using microwaves
US20120258607A1 (en) 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US8815720B2 (en) 2011-04-12 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Method of etching a workpiece
US9695510B2 (en) 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US8415250B2 (en) 2011-04-29 2013-04-09 International Business Machines Corporation Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
US8298954B1 (en) 2011-05-06 2012-10-30 International Business Machines Corporation Sidewall image transfer process employing a cap material layer for a metal nitride layer
US20120285621A1 (en) 2011-05-10 2012-11-15 Applied Materials, Inc. Semiconductor chamber apparatus for dielectric processing
US9653327B2 (en) 2011-05-12 2017-05-16 Applied Materials, Inc. Methods of removing a material layer from a substrate using water vapor treatment
EP2707375A4 (en) 2011-05-13 2015-01-07 Greenct Canada MONO-METALLIC GROUP-11 PRECURSOR COMPOUNDS AND USE THEREOF IN A METAL SEPARATION
US9012283B2 (en) 2011-05-16 2015-04-21 International Business Machines Corporation Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture
US8663389B2 (en) 2011-05-21 2014-03-04 Andrew Peter Clarke Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor
JP5563522B2 (ja) 2011-05-23 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US9287093B2 (en) 2011-05-31 2016-03-15 Applied Materials, Inc. Dynamic ion radical sieve and ion radical aperture for an inductively coupled plasma (ICP) reactor
KR101390900B1 (ko) 2011-05-31 2014-04-30 세메스 주식회사 기판처리장치
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
US9589772B2 (en) 2011-06-09 2017-03-07 Korea Basic Science Institute Plasma generation source including belt-type magnet and thin film deposition system using this
US8637372B2 (en) 2011-06-29 2014-01-28 GlobalFoundries, Inc. Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate
US8883637B2 (en) 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials
US9117867B2 (en) 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly
US9054048B2 (en) 2011-07-05 2015-06-09 Applied Materials, Inc. NH3 containing plasma nitridation of a layer on a substrate
CN102867748B (zh) 2011-07-06 2015-09-23 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片
JP5902896B2 (ja) 2011-07-08 2016-04-13 東京エレクトロン株式会社 基板処理装置
KR20110086540A (ko) 2011-07-12 2011-07-28 조인숙 불소화합물을 이용한 필름의 선택적인 식각 방법
US8741775B2 (en) 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8921177B2 (en) 2011-07-22 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating an integrated circuit device
US8974601B2 (en) 2011-07-29 2015-03-10 Semes Co., Ltd. Apparatuses, systems and methods for treating substrate
US20130034666A1 (en) 2011-08-01 2013-02-07 Applied Materials, Inc. Inductive plasma sources for wafer processing and chamber cleaning
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
JP5893864B2 (ja) 2011-08-02 2016-03-23 東京エレクトロン株式会社 プラズマエッチング方法
CN102915902B (zh) 2011-08-02 2015-11-25 中微半导体设备(上海)有限公司 一种电容耦合式的等离子体处理装置及其基片加工方法
KR101271247B1 (ko) 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
US9117759B2 (en) 2011-08-10 2015-08-25 Micron Technology, Inc. Methods of forming bulb-shaped trenches in silicon
US20130045605A1 (en) 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8735291B2 (en) 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
WO2013033315A2 (en) 2011-09-01 2013-03-07 Veeco Instruments Inc. Wafer carrier with thermal features
US20150270135A1 (en) 2011-09-01 2015-09-24 Tel Epion Inc. Gas cluster ion beam etching process
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US8808562B2 (en) 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US20130260564A1 (en) 2011-09-26 2013-10-03 Applied Materials, Inc. Insensitive dry removal process for semiconductor integration
US8664012B2 (en) 2011-09-30 2014-03-04 Tokyo Electron Limited Combined silicon oxide etch and contamination removal process
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
US9653267B2 (en) 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
EP2764408B1 (en) 2011-10-06 2019-08-21 ASML Netherlands B.V. Chuck, lithography apparatus and method of using a chuck
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US20130087309A1 (en) 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control
JP5740281B2 (ja) 2011-10-20 2015-06-24 東京エレクトロン株式会社 金属膜のドライエッチング方法
US9666414B2 (en) 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US9017481B1 (en) * 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US20130115372A1 (en) 2011-11-08 2013-05-09 Primestar Solar, Inc. High emissivity distribution plate in vapor deposition apparatus and processes
WO2013070438A1 (en) * 2011-11-08 2013-05-16 Applied Materials, Inc. Precursor distribution features for improved deposition uniformity
JP5779482B2 (ja) 2011-11-15 2015-09-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US9508530B2 (en) 2011-11-21 2016-11-29 Lam Research Corporation Plasma processing chamber with flexible symmetric RF return strap
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US8900364B2 (en) * 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
US8440523B1 (en) 2011-12-07 2013-05-14 International Business Machines Corporation Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch
US20130149866A1 (en) 2011-12-12 2013-06-13 Texas Instruments Incorporated Baffle plate for semiconductor processing apparatus
US10825708B2 (en) 2011-12-15 2020-11-03 Applied Materials, Inc. Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability
KR20130072911A (ko) 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조 방법
KR101878311B1 (ko) 2011-12-30 2018-07-17 삼성전자주식회사 ｈｉｇｈ-Ｋ막을 스페이서 에치 스톱으로 이용하는 반도체 소자 형성 방법 및 관련된 소자
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
US8747686B2 (en) 2012-01-27 2014-06-10 Applied Materials, Inc. Methods of end point detection for substrate fabrication processes
JP6010406B2 (ja) 2012-01-27 2016-10-19 東京エレクトロン株式会社 マイクロ波放射機構、マイクロ波プラズマ源および表面波プラズマ処理装置
JP5836144B2 (ja) 2012-01-31 2015-12-24 東京エレクトロン株式会社 マイクロ波放射機構および表面波プラズマ処理装置
SG11201403527UA (en) 2012-02-08 2014-09-26 Iwatani Corp Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride
US20130175654A1 (en) 2012-02-10 2013-07-11 Sylvain Muckenhirn Bulk nanohole structures for thermoelectric devices and methods for making the same
WO2013130191A1 (en) 2012-02-29 2013-09-06 Applied Materials, Inc. Abatement and strip process chamber in a load lock configuration
TWI602283B (zh) 2012-03-27 2017-10-11 諾發系統有限公司 鎢特徵部塡充
US8747610B2 (en) 2012-03-30 2014-06-10 Tokyo Electron Limited Plasma source pumping and gas injection baffle
US8937800B2 (en) 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US9162236B2 (en) 2012-04-26 2015-10-20 Applied Materials, Inc. Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US9161428B2 (en) 2012-04-26 2015-10-13 Applied Materials, Inc. Independent control of RF phases of separate coils of an inductively coupled plasma reactor
US20130284369A1 (en) 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
KR20150013627A (ko) 2012-04-26 2015-02-05 어플라이드 머티어리얼스, 인코포레이티드 Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
US9948214B2 (en) 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
JP6005579B2 (ja) 2012-04-27 2016-10-12 日本碍子株式会社 半導体製造装置用部材
CN103377979B (zh) 2012-04-30 2016-06-08 细美事有限公司 调节板和具有该调节板的用于处理基板的装置
US9976215B2 (en) 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
CN103388132B (zh) 2012-05-11 2015-11-25 中微半导体设备(上海)有限公司 气体喷淋头、其制造方法及薄膜生长反应器
US20130298942A1 (en) 2012-05-14 2013-11-14 Applied Materials, Inc. Etch remnant removal
KR101917815B1 (ko) 2012-05-31 2018-11-13 에스케이하이닉스 주식회사 에어갭을 구비한 반도체장치 및 그 제조 방법
FR2991320B1 (fr) 2012-06-05 2014-06-27 Commissariat Energie Atomique Procede de preparation d'amines methylees
US8974164B2 (en) 2012-06-26 2015-03-10 Newfrey Llc Plastic high heat fastener
US8916477B2 (en) 2012-07-02 2014-12-23 Novellus Systems, Inc. Polysilicon etch with high selectivity
US9034773B2 (en) 2012-07-02 2015-05-19 Novellus Systems, Inc. Removal of native oxide with high selectivity
US8802572B2 (en) 2012-07-10 2014-08-12 Applied Materials, Inc. Method of patterning a low-k dielectric film
KR101989514B1 (ko) 2012-07-11 2019-06-14 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9184030B2 (en) 2012-07-19 2015-11-10 Lam Research Corporation Edge exclusion control with adjustable plasma exclusion zone ring
US9631273B2 (en) 2012-07-25 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for dielectric deposition process
US20140027060A1 (en) * 2012-07-27 2014-01-30 Applied Matericals, Inc Gas distribution apparatus for substrate processing systems
JP6160619B2 (ja) 2012-08-01 2017-07-12 Tdk株式会社 フェライト磁性材料、フェライト焼結磁石及びモータ
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US8772888B2 (en) 2012-08-10 2014-07-08 Avalanche Technology Inc. MTJ MRAM with stud patterning
US20140051253A1 (en) 2012-08-14 2014-02-20 Lam Research Corporation Plasma baffle ring for a plasma processing apparatus and method of use
US8747680B1 (en) 2012-08-14 2014-06-10 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
WO2014116304A2 (en) 2012-08-23 2014-07-31 Applied Materials, Inc. Method and hardware for cleaning uv chambers
WO2014035933A1 (en) 2012-08-28 2014-03-06 Applied Materials, Inc. Methods and apparatus for forming tantalum silicate layers on germanium or iii-v semiconductor devices
US20140062285A1 (en) 2012-08-29 2014-03-06 Mks Instruments, Inc. Method and Apparatus for a Large Area Inductive Plasma Source
US9121097B2 (en) 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
JP6027374B2 (ja) 2012-09-12 2016-11-16 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
JP2014078678A (ja) 2012-09-18 2014-05-01 Toyoda Gosei Co Ltd 半導体発光装置の製造方法
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US20140099794A1 (en) * 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9132436B2 (en) * 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
TWI604528B (zh) 2012-10-02 2017-11-01 應用材料股份有限公司 使用電漿預處理與高溫蝕刻劑沉積的方向性二氧化矽蝕刻
TWI591712B (zh) 2012-10-03 2017-07-11 應用材料股份有限公司 使用低溫蝕刻劑沉積與電漿後處理的方向性二氧化矽蝕刻
KR102137617B1 (ko) 2012-10-19 2020-07-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
CN103794460B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
US9165783B2 (en) 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9777564B2 (en) 2012-12-03 2017-10-03 Pyrophase, Inc. Stimulating production from oil wells using an RF dipole antenna
WO2014092856A1 (en) 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US9982343B2 (en) 2012-12-14 2018-05-29 Applied Materials, Inc. Apparatus for providing plasma to a process chamber
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
JP6173684B2 (ja) 2012-12-25 2017-08-02 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
WO2014104753A1 (ko) 2012-12-28 2014-07-03 주식회사 뉴파워 프라즈마 플라즈마 반응기 및 이를 이용한 플라즈마 점화 방법
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
US9165823B2 (en) 2013-01-08 2015-10-20 Macronix International Co., Ltd. 3D stacking semiconductor device and manufacturing method thereof
US9093389B2 (en) 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
JP6080571B2 (ja) 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
JP2014154421A (ja) 2013-02-12 2014-08-25 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法、および高周波発生器
JP2014157944A (ja) 2013-02-15 2014-08-28 Toshiba Corp ガス供給部材及びプラズマ処理装置
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
TWI487004B (zh) 2013-03-01 2015-06-01 Winbond Electronics Corp 圖案化的方法及記憶體元件的形成方法
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
KR102064914B1 (ko) 2013-03-06 2020-01-10 삼성전자주식회사 식각 공정 장치 및 식각 공정 방법
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US8859433B2 (en) 2013-03-11 2014-10-14 International Business Machines Corporation DSA grapho-epitaxy process with etch stop material
KR102021988B1 (ko) 2013-03-12 2019-09-17 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US20140262031A1 (en) * 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
US8946023B2 (en) 2013-03-12 2015-02-03 Sandisk Technologies Inc. Method of making a vertical NAND device using sequential etching of multilayer stacks
US20140273525A1 (en) 2013-03-13 2014-09-18 Intermolecular, Inc. Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films
US20140272184A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Methods for maintaining clean etch rate and reducing particulate contamination with pecvd of amorphous silicon filims
US20140273487A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Pulsed dc plasma etching process and apparatus
US20140273451A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Tungsten deposition sequence
TWI625424B (zh) 2013-03-13 2018-06-01 應用材料股份有限公司 蝕刻包含過渡金屬的膜之方法
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
US9411237B2 (en) 2013-03-14 2016-08-09 Applied Materials, Inc. Resist hardening and development processes for semiconductor device manufacturing
US9006106B2 (en) 2013-03-14 2015-04-14 Applied Materials, Inc. Method of removing a metal hardmask
US9117670B2 (en) 2013-03-14 2015-08-25 Sunedison Semiconductor Limited (Uen201334164H) Inject insert liner assemblies for chemical vapor deposition systems and methods of using same
US8946076B2 (en) 2013-03-15 2015-02-03 Micron Technology, Inc. Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
WO2014145263A1 (en) 2013-03-15 2014-09-18 Dr. Py Institute, Llc Single-use needle assembly and method
US9224583B2 (en) 2013-03-15 2015-12-29 Lam Research Corporation System and method for heating plasma exposed surfaces
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
JP6096547B2 (ja) * 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
JP5386046B1 (ja) 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
US10125422B2 (en) 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US10941501B2 (en) 2013-03-29 2021-03-09 Analytical Specialties, Inc. Method and composition for metal finishing
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US20140308758A1 (en) 2013-04-10 2014-10-16 Applied Materials, Inc. Patterning magnetic memory
US8748322B1 (en) 2013-04-16 2014-06-10 Applied Materials, Inc. Silicon oxide recess etch
US20140311581A1 (en) 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
TWI600786B (zh) 2013-05-01 2017-10-01 應用材料股份有限公司 用於腔室清潔或預清潔製程之鈷移除
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US9720022B2 (en) 2015-05-19 2017-08-01 Lam Research Corporation Systems and methods for providing characteristics of an impedance matching model for use with matching networks
KR102156795B1 (ko) * 2013-05-15 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 증착 장치
US20140342569A1 (en) 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
JP6002087B2 (ja) 2013-05-29 2016-10-05 東京エレクトロン株式会社 グラフェンの生成方法
US20140357083A1 (en) 2013-05-31 2014-12-04 Applied Materials, Inc. Directed block copolymer self-assembly patterns for advanced photolithography applications
JP6180799B2 (ja) 2013-06-06 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR102038647B1 (ko) 2013-06-21 2019-10-30 주식회사 원익아이피에스 기판 지지 장치 및 이를 구비하는 기판 처리 장치
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US10808317B2 (en) * 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US8871651B1 (en) 2013-07-12 2014-10-28 Globalfoundries Inc. Mask formation processing
US8932947B1 (en) 2013-07-23 2015-01-13 Applied Materials, Inc. Methods for forming a round bottom silicon trench recess for semiconductor applications
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
KR102154112B1 (ko) 2013-08-01 2020-09-09 삼성전자주식회사 금속 배선들을 포함하는 반도체 장치 및 그 제조 방법
US9070635B2 (en) 2013-08-09 2015-06-30 United Microelectronics Corp. Removing method
US20150050812A1 (en) 2013-08-13 2015-02-19 Globalfoundries Inc. Wafer-less auto clean of processing chamber
US9543163B2 (en) 2013-08-20 2017-01-10 Applied Materials, Inc. Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
WO2015031163A1 (en) 2013-08-27 2015-03-05 Tokyo Electron Limited Method for laterally trimming a hardmask
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
JP5837012B2 (ja) 2013-09-12 2015-12-24 ラピスセミコンダクタ株式会社 モニタリング方法、プラズマモニタリング方法、モニタリングシステム及びプラズマモニタリングシステム
US9230980B2 (en) 2013-09-15 2016-01-05 Sandisk Technologies Inc. Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9051655B2 (en) 2013-09-16 2015-06-09 Applied Materials, Inc. Boron ionization for aluminum oxide etch enhancement
US8980758B1 (en) 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
TWI720422B (zh) 2013-09-27 2021-03-01 美商應用材料股份有限公司 實現無縫鈷間隙填充之方法
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9214377B2 (en) 2013-10-31 2015-12-15 Applied Materials, Inc. Methods for silicon recess structures in a substrate by utilizing a doping layer
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
SG11201600440VA (en) 2013-11-06 2016-02-26 Mattson Tech Inc Novel mask removal process strategy for vertical nand device
JP2017504955A (ja) 2013-11-06 2017-02-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｄｃバイアス変調による、粒子発生抑制装置
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US8945414B1 (en) 2013-11-13 2015-02-03 Intermolecular, Inc. Oxide removal by remote plasma treatment with fluorine and oxygen radicals
US9330937B2 (en) 2013-11-13 2016-05-03 Intermolecular, Inc. Etching of semiconductor structures that include titanium-based layers
FR3013503B1 (fr) 2013-11-20 2015-12-18 Commissariat Energie Atomique Procede de gravure selective d’un masque dispose sur un substrat silicie
US9514953B2 (en) 2013-11-20 2016-12-06 Applied Materials, Inc. Methods for barrier layer removal
KR102237700B1 (ko) 2013-11-27 2021-04-08 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US10241839B2 (en) 2013-12-04 2019-03-26 Nec Corporation Method and system for generating a virtual device resource accessible by an application
US20150170926A1 (en) 2013-12-16 2015-06-18 David J. Michalak Dielectric layers having ordered elongate pores
US9312168B2 (en) 2013-12-16 2016-04-12 Applied Materials, Inc. Air gap structure integration using a processing system
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
KR102102787B1 (ko) 2013-12-17 2020-04-22 삼성전자주식회사 기판 처리 장치 및 블록커 플레이트 어셈블리
US20150171008A1 (en) 2013-12-17 2015-06-18 GLOBAL FOUNDRIES Singapore Ptd. Ltd. Integrated circuits with dummy contacts and methods for producing such integrated circuits
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US20150170943A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US20150170879A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US20170004975A1 (en) 2013-12-27 2017-01-05 Intel Corporation Technologies for selectively etching oxide and nitride materials and products formed using the same
US9622375B2 (en) 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
US9111907B2 (en) 2014-01-02 2015-08-18 Globalfoundries Inc. Silicide protection during contact metallization and resulting semiconductor structures
KR102128465B1 (ko) 2014-01-03 2020-07-09 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
US9945033B2 (en) 2014-01-06 2018-04-17 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized RF shield for plasma profile control
US20150200042A1 (en) 2014-01-10 2015-07-16 Applied Materials, Inc. Recessing ultra-low k dielectric using remote plasma source
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9299577B2 (en) 2014-01-24 2016-03-29 Applied Materials, Inc. Methods for etching a dielectric barrier layer in a dual damascene structure
US20150214066A1 (en) 2014-01-27 2015-07-30 Applied Materials, Inc. Method for material removal in dry etch reactor
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
JP6312451B2 (ja) 2014-01-29 2018-04-18 東京エレクトロン株式会社 給電部カバー構造及び半導体製造装置
US9502218B2 (en) 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
US9305749B2 (en) 2014-02-10 2016-04-05 Applied Materials, Inc. Methods of directing magnetic fields in a plasma source, and associated systems
JP6059165B2 (ja) 2014-02-19 2017-01-11 東京エレクトロン株式会社 エッチング方法、及びプラズマ処理装置
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9209031B2 (en) 2014-03-07 2015-12-08 Sandisk Technologies Inc. Metal replacement process for low resistance source contacts in 3D NAND
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9190290B2 (en) 2014-03-31 2015-11-17 Applied Materials, Inc. Halogen-free gas-phase silicon etch
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
KR102175763B1 (ko) 2014-04-09 2020-11-09 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
US9177853B1 (en) 2014-05-14 2015-11-03 Sandisk Technologies Inc. Barrier layer stack for bit line air gap formation
CN104392963B (zh) 2014-05-16 2017-07-11 中国科学院微电子研究所 三维半导体器件制造方法
US9520485B2 (en) 2014-05-21 2016-12-13 Macronix International Co., Ltd. 3D independent double gate flash memory on bounded conductor layer
US9881788B2 (en) 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US10269541B2 (en) 2014-06-02 2019-04-23 Applied Materials, Inc. Workpiece processing chamber having a thermal controlled microwave window
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US9666449B2 (en) 2014-06-17 2017-05-30 Micron Technology, Inc. Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US20150371865A1 (en) 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US20150371861A1 (en) 2014-06-23 2015-12-24 Applied Materials, Inc. Protective silicon oxide patterning
US9502518B2 (en) 2014-06-23 2016-11-22 Stmicroelectronics, Inc. Multi-channel gate-all-around FET
KR102248205B1 (ko) 2014-06-25 2021-05-04 삼성전자주식회사 수직 채널 및 에어 갭을 갖는 반도체 소자
US9768270B2 (en) 2014-06-25 2017-09-19 Sandisk Technologies Llc Method of selectively depositing floating gate material in a memory device
US10487399B2 (en) 2014-06-26 2019-11-26 Applied Materials, Inc. Atomic layer deposition chamber with counter-flow multi inject
US10196741B2 (en) 2014-06-27 2019-02-05 Applied Materials, Inc. Wafer placement and gap control optimization through in situ feedback
US9840777B2 (en) * 2014-06-27 2017-12-12 Applied Materials, Inc. Apparatus for radical-based deposition of dielectric films
KR20160002543A (ko) 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
TWI665328B (zh) 2014-07-02 2019-07-11 美商應用材料股份有限公司 用於電漿處理的多區域基座
US20160005833A1 (en) 2014-07-03 2016-01-07 Applied Materials, Inc. Feol low-k spacers
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
US10192717B2 (en) 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US20160042968A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Integrated oxide and si etch for 3d cell channel mobility improvements
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US20160043099A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Wordline 3d flash memory air gap
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9460898B2 (en) 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
JP6346849B2 (ja) * 2014-08-20 2018-06-20 東京エレクトロン株式会社 ガス供給系、プラズマ処理装置、及びプラズマ処理装置の運用方法
JP6315809B2 (ja) 2014-08-28 2018-04-25 東京エレクトロン株式会社 エッチング方法
US9558928B2 (en) 2014-08-29 2017-01-31 Lam Research Corporation Contact clean in high-aspect ratio structures
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9735009B2 (en) 2014-09-15 2017-08-15 Applied Materials, Inc. Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
JP5764246B1 (ja) 2014-09-24 2015-08-19 株式会社日立国際電気 基板処理装置、ガス導入シャフト及びガス供給プレート
US10083818B2 (en) 2014-09-24 2018-09-25 Applied Materials, Inc. Auto frequency tuned remote plasma source
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
CN105448737A (zh) 2014-09-30 2016-03-30 联华电子股份有限公司 用以形成硅凹槽的蚀刻制作工艺方法与鳍式场效晶体管
US20160099173A1 (en) 2014-10-03 2016-04-07 Applied Materials, Inc. Methods for etching a barrier layer for an interconnection structure for semiconductor applications
US10407771B2 (en) 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
US9240315B1 (en) 2014-10-10 2016-01-19 Applied Materials, Inc. CVD oxide surface pre-conditioning by inductively coupled O2 plasma
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US10008404B2 (en) 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
CN107148661B (zh) 2014-10-17 2019-10-18 朗姆研究公司 包括用于可调气流控制的气体分流器的气体供应输送装置
US9905400B2 (en) 2014-10-17 2018-02-27 Applied Materials, Inc. Plasma reactor with non-power-absorbing dielectric gas shower plate assembly
US9652567B2 (en) 2014-10-20 2017-05-16 Lam Research Corporation System, method and apparatus for improving accuracy of RF transmission models for selected portions of an RF transmission path
US9825051B2 (en) 2014-10-22 2017-11-21 Sandisk Technologies Llc Three dimensional NAND device containing fluorine doped layer and method of making thereof
US9508529B2 (en) 2014-10-23 2016-11-29 Lam Research Corporation System, method and apparatus for RF power compensation in a plasma processing system
US10102321B2 (en) 2014-10-24 2018-10-16 Lam Research Corporation System, method and apparatus for refining radio frequency transmission system models
US9202708B1 (en) 2014-10-24 2015-12-01 Applied Materials, Inc. Doped silicon oxide etch
US9368369B2 (en) 2014-11-06 2016-06-14 Applied Materials, Inc. Methods for forming a self-aligned contact via selective lateral etch
US9419135B2 (en) 2014-11-13 2016-08-16 Sandisk Technologies Llc Three dimensional NAND device having reduced wafer bowing and method of making thereof
US9466494B2 (en) 2014-11-18 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Selective growth for high-aspect ration metal fill
US9799509B2 (en) 2014-11-26 2017-10-24 Asm Ip Holding B.V. Cyclic aluminum oxynitride deposition
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9620377B2 (en) 2014-12-04 2017-04-11 Lab Research Corporation Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
JP6320282B2 (ja) 2014-12-05 2018-05-09 東京エレクトロン株式会社 エッチング方法
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10781518B2 (en) 2014-12-11 2020-09-22 Applied Materials, Inc. Gas cooled electrostatic chuck (ESC) having a gas channel formed therein and coupled to a gas box on both ends of the gas channel
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US20160181116A1 (en) 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US9396961B2 (en) 2014-12-22 2016-07-19 Lam Research Corporation Integrated etch/clean for dielectric etch applications
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US10134750B2 (en) 2014-12-30 2018-11-20 Toshiba Memory Corporation Stacked type semiconductor memory device and method for manufacturing the same
US9633867B2 (en) 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US9779919B2 (en) 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US10217614B2 (en) 2015-01-12 2019-02-26 Lam Research Corporation Ceramic gas distribution plate with embedded electrode
JP2016134530A (ja) 2015-01-20 2016-07-25 株式会社東芝 加工制御装置、加工制御プログラムおよび加工制御方法
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US10354860B2 (en) 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160237570A1 (en) 2015-02-13 2016-08-18 Applied Materials, Inc. Gas delivery apparatus for process equipment
JP6396822B2 (ja) 2015-02-16 2018-09-26 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法
US9275834B1 (en) 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch
US9343358B1 (en) 2015-02-23 2016-05-17 Sandisk Technologies Inc. Three-dimensional memory device with stress compensation layer within a word line stack
CN107548520B (zh) 2015-02-24 2021-05-25 东芝存储器株式会社 半导体存储装置及其制造方法
JP2018511935A (ja) 2015-02-25 2018-04-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 金属窒化物を選択的に除去するためにアルキルアミンを使用する方法及び装置
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
TWI670749B (zh) 2015-03-13 2019-09-01 美商應用材料股份有限公司 耦接至工藝腔室的電漿源
US10153133B2 (en) 2015-03-23 2018-12-11 Applied Materials, Inc. Plasma reactor having digital control over rotation frequency of a microwave field with direct up-conversion
JP2016184610A (ja) 2015-03-25 2016-10-20 株式会社東芝 上部電極、エッジリングおよびプラズマ処理装置
US9478433B1 (en) 2015-03-30 2016-10-25 Applied Materials, Inc. Cyclic spacer etching process with improved profile control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US20160293388A1 (en) 2015-04-03 2016-10-06 Tokyo Electron Limited Pneumatic counterbalance for electrode gap control
KR102452593B1 (ko) 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
US20160307772A1 (en) 2015-04-15 2016-10-20 Applied Materials, Inc. Spacer formation process with flat top profile
US10049862B2 (en) 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
US9576815B2 (en) 2015-04-17 2017-02-21 Applied Materials, Inc. Gas-phase silicon nitride selective etch
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9576788B2 (en) 2015-04-24 2017-02-21 Applied Materials, Inc. Cleaning high aspect ratio vias
KR101792941B1 (ko) * 2015-04-30 2017-11-02 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드, 상하이 화학기상증착장치 및 그 세정방법
US10253412B2 (en) 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
JP6184441B2 (ja) 2015-06-01 2017-08-23 キヤノンアネルバ株式会社 イオンビームエッチング装置、およびイオンビーム発生装置
JP6295439B2 (ja) 2015-06-02 2018-03-20 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法、電子デバイスの製造方法
CN107533978B (zh) 2015-06-04 2021-01-08 东芝存储器株式会社 半导体存储装置及其制造方法
US9449843B1 (en) 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
JP2017017277A (ja) 2015-07-06 2017-01-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
US9659791B2 (en) 2015-07-16 2017-05-23 Applied Materials, Inc. Metal removal with reduced surface roughness
US11473826B2 (en) 2015-07-27 2022-10-18 Mitegen, Llc Cryogenic cooling apparatus, methods, and applications
US9564341B1 (en) 2015-08-04 2017-02-07 Applied Materials, Inc. Gas-phase silicon oxide selective etch
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10950477B2 (en) 2015-08-07 2021-03-16 Applied Materials, Inc. Ceramic heater and esc with enhanced wafer edge performance
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US9659788B2 (en) 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
US10147736B2 (en) 2015-09-03 2018-12-04 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
US9564338B1 (en) 2015-09-08 2017-02-07 Applied Materials, Inc. Silicon-selective removal
US9412752B1 (en) 2015-09-22 2016-08-09 Macronix International Co., Ltd. Reference line and bit line structure for 3D memory
US9460959B1 (en) 2015-10-02 2016-10-04 Applied Materials, Inc. Methods for pre-cleaning conductive interconnect structures
US9853101B2 (en) 2015-10-07 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanowire CMOS device and method of forming
JP6868616B2 (ja) 2015-10-08 2021-05-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 背面でのプラズマ点火が低減されたシャワーヘッド
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US20170133202A1 (en) 2015-11-09 2017-05-11 Lam Research Corporation Computer addressable plasma density modification for etch and deposition processes
JP2017098478A (ja) 2015-11-27 2017-06-01 東京エレクトロン株式会社 エッチング方法
US9583399B1 (en) 2015-11-30 2017-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10043636B2 (en) 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
US10861693B2 (en) 2015-12-18 2020-12-08 Applied Materials, Inc. Cleaning method
US9831097B2 (en) 2015-12-18 2017-11-28 Applied Materials, Inc. Methods for selective etching of a silicon material using HF gas without nitrogen etchants
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
KR20180097763A (ko) 2016-01-20 2018-08-31 어플라이드 머티어리얼스, 인코포레이티드 측방향 하드마스크 리세스 감소를 위한 하이브리드 탄소 하드마스크
US10074730B2 (en) 2016-01-28 2018-09-11 International Business Machines Corporation Forming stacked nanowire semiconductor device
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10533252B2 (en) * 2016-03-31 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Showerhead, semicondcutor processing apparatus having the same and semiconductor process
TWI677593B (zh) 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102649369B1 (ko) 2016-04-11 2024-03-21 삼성전자주식회사 반도체 소자 및 그 제조 방법
WO2017184223A1 (en) 2016-04-22 2017-10-26 Applied Materials, Inc. Substrate support pedestal having plasma confinement features
KR101773448B1 (ko) 2016-04-29 2017-09-01 세메스 주식회사 안테나 및 그를 이용하는 기판 처리 장치
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10622189B2 (en) 2016-05-11 2020-04-14 Lam Research Corporation Adjustable side gas plenum for edge rate control in a downstream reactor
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
KR102156390B1 (ko) 2016-05-20 2020-09-16 어플라이드 머티어리얼스, 인코포레이티드 반도체 처리를 위한 가스 분배 샤워헤드
GB201609119D0 (en) 2016-05-24 2016-07-06 Spts Technologies Ltd A method of cleaning a plasma processing module
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US9812462B1 (en) 2016-06-07 2017-11-07 Sandisk Technologies Llc Memory hole size variation in a 3D stacked memory
JP6792786B2 (ja) 2016-06-20 2020-12-02 東京エレクトロン株式会社 ガス混合装置および基板処理装置
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9978768B2 (en) 2016-06-29 2018-05-22 Sandisk Technologies Llc Method of making three-dimensional semiconductor memory device having laterally undulating memory films
US10522377B2 (en) 2016-07-01 2019-12-31 Lam Research Corporation System and method for substrate support feed-forward temperature control based on RF power
US20180025900A1 (en) 2016-07-22 2018-01-25 Applied Materials, Inc. Alkali metal and alkali earth metal reduction
JP6994502B2 (ja) 2016-08-26 2022-01-14 アプライド マテリアルズ インコーポレイテッド プラズマ処理チャンバ用プラズマスクリーン
US10083961B2 (en) 2016-09-07 2018-09-25 International Business Machines Corporation Gate cut with integrated etch stop layer
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
JP2018046185A (ja) 2016-09-15 2018-03-22 東京エレクトロン株式会社 酸化シリコン及び窒化シリコンを互いに選択的にエッチングする方法
WO2018052477A2 (en) 2016-09-15 2018-03-22 Applied Materials, Inc. An integrated method for wafer outgassing reduction
US20180080124A1 (en) 2016-09-19 2018-03-22 Applied Materials, Inc. Methods and systems for thermal ale and ald
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9960068B1 (en) 2016-12-02 2018-05-01 Lam Research Corporation Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
JP6731549B2 (ja) 2016-10-28 2020-07-29 シグニファイ ホールディング ビー ヴィＳｉｇｎｉｆｙ Ｈｏｌｄｉｎｇ Ｂ．Ｖ． 照明のモニタリング
US10418246B2 (en) * 2016-11-03 2019-09-17 Applied Materials, Inc. Remote hydrogen plasma titanium deposition to enhance selectivity and film uniformity
KR102633031B1 (ko) 2016-11-04 2024-02-05 에스케이하이닉스 주식회사 반도체 메모리 소자
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10032661B2 (en) 2016-11-18 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
US10164042B2 (en) 2016-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10141328B2 (en) 2016-12-15 2018-11-27 Macronix International Co., Ltd. Three dimensional memory device and method for fabricating the same
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10692880B2 (en) 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US10123065B2 (en) 2016-12-30 2018-11-06 Mora Global, Inc. Digital video file generation
US9960045B1 (en) 2017-02-02 2018-05-01 Applied Materials, Inc. Charge-trap layer separation and word-line isolation for enhanced 3-D NAND structure
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US9779956B1 (en) 2017-02-06 2017-10-03 Lam Research Corporation Hydrogen activated atomic layer etching
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10208383B2 (en) 2017-02-09 2019-02-19 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
US20180261686A1 (en) 2017-03-13 2018-09-13 Applied Materials, Inc. Transistor sidewall formation process
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
KR102096700B1 (ko) * 2017-03-29 2020-04-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11447868B2 (en) 2017-05-26 2022-09-20 Applied Materials, Inc. Method for controlling a plasma process
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US20190032211A1 (en) 2017-07-28 2019-01-31 Lam Research Corporation Monolithic ceramic gas distribution plate
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US11049719B2 (en) 2017-08-30 2021-06-29 Applied Materials, Inc. Epitaxy system integrated with high selectivity oxide removal and high temperature contaminant removal
JP6883495B2 (ja) 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
US11222771B2 (en) * 2018-02-05 2022-01-11 Applied Materials, Inc. Chemical control features in wafer process equipment
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
KR20240027863A (ko) 2018-03-16 2024-03-04 램 리써치 코포레이션 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
KR102641752B1 (ko) 2018-11-21 2024-03-04 삼성전자주식회사 가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems

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