CN104641457B - 气体分配组合件 - Google Patents
气体分配组合件 Download PDFInfo
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- CN104641457B CN104641457B CN201380048676.1A CN201380048676A CN104641457B CN 104641457 B CN104641457 B CN 104641457B CN 201380048676 A CN201380048676 A CN 201380048676A CN 104641457 B CN104641457 B CN 104641457B
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- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
描述了气体分配组合件,包括环形主体、上板材及下板材。该上板材可以界定第一多个孔,并且该下板材可以界定第二和第三多个孔。该上板材和该下板材可以彼此耦接并与该环形主体耦接,使得该第一和第二孔形成通过该气体分配组合件的通道,并且该上板材和该下板材之间界定一容积。
Description
相关申请案的交叉引用
本申请案主张于2012年09月21日提出申请且标题为“晶圆处理设备中的化学物质控制特征(Chemical Control Features in Wafer Process Equipment)”的美国临时专利申请案第61/704,257号的优先权权益。为了所有的目的将该申请案的全部内容以引用方式并入本文中。
技术领域
本技术关于半导体工艺和设备。更具体而言,本技术关于处理系统等离子体组件。
背景
通过在基板表面上产生错综复杂的图案化材料层的工艺能够制作出集成电路。在基板上产生图案化材料需要控制的方法,以去除曝光的材料。化学蚀刻被用于各式各样的目的,包括将光阻中的图案转入下面的层,即已经存在表面上的薄化层或特征的薄化横向尺寸。往往理想的是拥有一种蚀刻一种材料的速度比蚀刻另一种材料的速度更快的蚀刻工艺,以有助于例如图案转移工艺。这样的蚀刻工艺即所谓的对第一种材料有选择性。材料、电路及工艺具有多样性的结果是,已经开发出具有对各种材料的选择性的蚀刻工艺。
在基板处理区域内形成的局部等离子体中产生的干蚀刻可以穿透更受限的沟槽并表现出较少的细微剩余结构变形。然而,随着集成电路技术不断地在尺寸上缩小,输送前驱物的设备会影响所使用的前驱物和等离子体物种的均匀性和品质。
因此,需要有可以在等离子体环境中被有效使用同时提供适当降解曲线的经改良系统组件。本技术解决了这些和其它的需求。
概要
描述了气体分配组合件,包括环形主体、上板材及下板材。该上板材可以界定第一多个孔,并且该下板材可以界定第二和第三多个孔。该上板材和该下板材可以彼此耦接并与该环形主体耦接,使得该第一和第二孔形成通过该气体分配组合件的通道,并且该上板材和该下板材之间界定一容积。
该组合件可以包括环形主体,该环形主体具有位于内径的内环形壁、位于外径的外环形壁以及上表面和下表面。该环形主体可以进一步包括形成在该上表面中的第一上凹部、在该内环形壁形成在该下表面中的第一下凹部以及在该第一下凹部下方并从该第一下凹部径向往外形成在该下表面中的第二下凹部。该环形主体还可以在该上表面中界定第一流体通道,该第一流体通道从该第一上凹部径向往内位于该环形主体中。该组合件可以包括在该第一上凹部与该环形主体耦接并覆盖该第一流体通道的上板材,并且该上板材可以界定多个第一孔。该组合件还可以包括在该第一下凹部与该环形主体耦接的下板材,下板材并具有界定于该下板材中的多个第二孔,其中该第二孔与界定于该上板材中的第一孔对齐。该下板材还可以界定位于该第二孔之间的多个第三孔。该上板材和该下板材可以彼此耦接,使得该第一孔与该第二孔对齐而形成穿过该上板材和该下板材的通道。
可以将该组合件的该上板材和该下板材黏合在一起。该组合件的该环形主体可以进一步在该上表面中界定第二流体通道,该第二流体通道位于从该第一流体通道径向往外处,并且可以将多个通口界定在该环形主体的一部分中,该环形主体的该部分界定该第一流体通道的外壁和该第二流体通道的内壁。该第二流体通道可以位于该上凹部径向往外,使得该第二流体通道未被该上板材覆盖。该环形主体可以在该第二流体通道的顶部附近并在该内壁和外壁中界定第二上凹部,而且该气体分配组合件可以包括环形构件,该环形构件位于该第二上凹部内,以便覆盖该第二流体通道。该上凹部可以包括与该第一流体通道的该外壁相交的底部部分。
该组合件可以进一步包括一对隔离通道,其中该对隔离通道中的一者被界定于该环形主体的该上表面中,并且该对隔离通道中的另一者被界定于该环形主体的该下表面中。该对隔离通道可以彼此垂直对齐。该第二流体通道可以位于从该上凹部径向往内,使得在实施例中该第二流体通道被该上板材覆盖。一部分的该上板材还可以延伸进入该第二通道至该上凹部的底部下方。该多个通口可以从该第二流体通道往该第一流体通道向上成一角度,使得该通口在延伸进入该第二通道的该部分上板材下方可流体连通。在实施例中可以配置该隔离通道,使得该对隔离通道中的一者在从该上凹部径向往内的位置被界定于该上板材中,并且该对隔离通道中的另一者被界定于该环形主体的该下表面中,所以该对隔离通道彼此垂直对齐。该环形主体还可以界定环形温度通道,该环形温度通道配置成接收冷却流体,可操作该冷却流体来保持该环形主体的温度。该温度通道还可以配置成接收加热元件,该加热元件位于该通道内,并可操作该加热元件来保持该环形主体的温度。
亦描述了可以包括环形主体的气体分配组合件。该环形主体可以包括位于内径的内环形壁、位于外径的外环形壁、上表面及下表面。可以在该上表面中形成上凹部,并且可以在该下表面中形成下凹部。可以在该下表面中界定第一流体通道,该第一流体通道从该下凹部径向往内位于该环形主体中。该组合件还可以包括在该上凹部与该环形主体耦接的上板材,其中该上板材界定多个第一孔。该组合件还可以包括在该下凹部与该环形主体耦接并覆盖该第一流体通道的下板材。该下板材可以界定多个第二孔,该第二孔与界定于该上板材中的第一孔对齐。该下板材可以进一步界定多个第三孔,该多个第三孔位于该第二孔之间。该上板材和该下板材可以彼此耦接,使得该第一孔与该第二孔对齐而形成穿过该上板材和该下板材的通道。
该气体分配组合件可以包括界定于该下表面中的第二流体通道,该第二流体通道从该第一流体通道径向往外位于该环形主体中。可以将多个通口界定在该环形主体的一部分中,该环形主体的该部分界定该第一流体通道的外壁和该第二流体通道的内壁,而且该多个通口可以配置成流体耦接该第二流体通道与该第一流体通道。该第二流体通道可以位于该下凹部径向往内,使得该第二流体通道可以被该下板材覆盖,以及其中一部分该下板材延伸进入该第二通道至该下凹部的顶部上方。该多个通口可以从该第二流体通道往该第一流体通道向下成一角度,使得该通口在延伸进入该第二通道的该部分下板材上方可流体连通。当该第一孔延伸通过该上板材时,该第一孔还可以具有直径减小的锥形形状。当该第二孔和该第三孔延伸通过该下板材时,该第二孔和该第三孔可以具有直径增加的锥形形状。每个该第二孔和该第三孔还可以包括至少三个形状或直径不同的部分。
亦描述了气体分配组合件,该气体分配组合件具有环形主体,该环形主体具有位于内径的内环形壁、位于外径的外环形壁、上表面及下表面。该组合件还可以包括与该环形主体耦接的上板材,并且该上板材可以界定多个第一孔。中间板材可以与该上板材耦接,并且该中间板材可以界定多个第二孔和第三孔,其中该第二孔与该上板材的该第一孔对齐。该组合件还可以包括下板材,该下板材与该环形主体和该中间板材耦接。该下板材可以界定多个第四孔,该第四孔与该上板材的该第一孔及该中间板材的该第二孔对齐,以形成通过该等板材的第一组流体通道。该下板材还可以界定多个第五孔,该第五孔与该中间板材的该第三孔对齐,以形成通过该中间板材和该下板材的第二组流体通道,其中该第二组流体通道与该第一组流体通道流体隔离。该下板材可以进一步界定第六组孔,该第六组孔形成通过该下板材的第三组流体通道,其中该第三组流体通道与该第一和第二组流体通道流体隔离。
该气体分配组合件的该下板材可以包括的该第四、第五及第六孔的方位使得大部分的该第四孔每个皆被至少四个该第五孔和四个该第六孔包围。该第五孔可以位于该第四孔周围,并且该第五孔的中心绕该第四孔的中心彼此间隔约90°,并且该第六孔可以位于该第四孔周围,并且该第六孔的中心绕该第四孔的该中心彼此间隔约90°,并从该第五孔偏离约45°。该第五孔可以位于该第四孔周围,并且该第五孔的中心绕该第四孔的中心彼此间隔约60°,以及其中该第六孔位于该第四孔周围,并且该第六孔的中心绕该第四孔的该中心彼此间隔约60°,并从该第五孔偏离约30°。
这样的技术可以提供许多优于传统系统和技术的效益。例如,可以最少化或避免经由组合件的泄漏,以提供改良的流动特性,而得出改良的工艺均匀性。此外,可以经由该组合件输送多种前驱物,同时将该等前驱物保持彼此流体隔离。结合以下的描述和附图来更详细地描述这些和其它的实施例以及该等实施例的许多优点和特征。
附图简述
藉由参照本说明书的剩余部分及附图可以实现对揭示的技术的本质与优点的进一步了解。
图1图示示例性处理工具的一个实施例的俯视图。
图2A-2E图示示例性处理腔室的示意性剖面图。
图3A-3E图示依据所揭示技术的示例性喷洒头架构的示意图。
图4A-4B图示依据所揭示技术的示例性喷洒头架构的附加示意图。
图5A-5C图示依据所揭示技术的示例性喷洒头架构的附加示意图。
在附图中,相似的组件及/或特征可以具有相同的数字参考标号。此外,相同类型的各个组件可以藉由在该参考标号之后接续字母来进行区分,该字母可以在类似的组件及/或特征之间进行区分。假使只在说明书中使用第一数字参考标号,则该描述适用于任何一个具有相同第一数字参考标号的类似组件及/或特征,而与该字母下标无关。
详细描述
本技术包括用于散布处理气体的改良气体分配组合件或喷洒头设计,以产生用于在高度更均匀的半导体基板上形成沉积层及/或以更均匀的方式蚀刻沉积层的流动模式。虽然传统的喷洒头设计可以简单地提供用于处理和前驱物气体的直通分配系统,但现在描述的技术允许在气体被输送到基板处理腔室时改良地控制气体的流动特性。在这样做时,沉积操作可以在制造操作的过程中产生更精确的膜轮廓。
虽然一些传统的气体分配组合件或喷洒头可以包括例如多个被板材覆盖的流体通道,但这样的设计例行地受到在沿着板材与位在通道和内壁之间的主体部分的相交处存有缝隙的影响。当板材与主体耦接时,例如经由黏接、硬焊等,板材可能会变形。因为只能在外边缘周围进行耦接,所以没有额外的黏接可以存在于板材和主体的其它接面处。即使是轻微的板材变形也可能在上板材和环形主体之间的接面处产生不平整的表面,而发生变形的接面位置可能无法适当地与环形主体耦接。因此,在操作中,流体可能会在第一和第二流体通道之间以及在该第一流体通道和中央区域之间泄漏。这种泄漏会影响到进入处理区域的流体输送,进而影响沉积或蚀刻。然而,本技术的各个态样藉由提供不太可能变形的组件及/或受变形影响较小的设计克服了许多(若不是全部)这些问题。
图1图示依据所揭示实施例的沉积、蚀刻、烘烤及/或固化腔室的系统工具100的一个实施例的俯视平面图。在该图中,一对FOUP(前开式晶圆传送盒)102供应基板(例如各种特定直径的半导体晶圆),该基板由机器人手臂104接收,并在被放入串接工艺腔室109a-c的基板处理部分108a-f中的一个基板处理部分之前被放入低压保持区域106。可以使用第二机器人手臂110来在保持区域106和处理腔室108a-f之间来回运送基板。
串接工艺腔室109a-c的基板处理部分108a-f可以包括一或更多个系统组件,用以对基板或基板上的膜进行沉积、退火、固化及/或蚀刻。示例性的膜可以是流动性介电质,但仍有许多类型的膜可以使用该处理工具形成或处理。在一个架构中,可以使用处理腔室的两对串接处理部分(例如108c-d和108e-f)在基板上沉积介电质材料,并且可以使用第三对串接处理部分(例如108a-b)对沉积的介电质进行退火。在另一种架构中,可以配置处理腔室的两对串接处理部分(例如108c-d和108e-f)被配置为在基板上既进行介电质膜的沉积又进行退火,同时可以使用第三对串接处理部分(例如108a-b)来紫外线(UV)或电子束固化沉积的膜。在仍另一种架构中,可以配置全部的三对串接处理部分(例如108a-f)在基板上进行介电质膜的沉积和固化或在沉积的膜中蚀刻出特征。
在又另一种架构中,可以使用两对串接处理部分(例如108c-d和108e-f)既沉积又UV或电子束固化介电质,同时可以使用第三对串接处理部分(例如108a-b)来对介电质膜进行退火。另外,可以将串接处理部分108a-f中的一或更多者配置为处理腔室,而且串接处理部分108a-f中的该一或更多者可以是湿式或干式处理腔室。这些工艺腔室可以包括在含有水气的氛围中加热介电质膜。因此,系统100的实施例可以包括湿式处理串接处理部分108a-b和退火串接处理部分108c-d,以在沉积的介电质膜上进行湿式与干式退火两者。将理解的是,系统100可考虑用于进行介电质膜的沉积、退火及固化的另外架构。
图2A为示例性的工艺腔室部分200的剖面图,工艺腔室部分200在处理腔室内具有分开的等离子体产生区域。在膜沉积(例如氧化硅、氮化硅、硅氧氮化物或硅氧碳化物)过程中,可以使工艺气体经由气体入口组合件205流入第一等离子体区域215。远程等离子体系统(RPS)201可以处理气体,然后该气体经由气体入口组合件205前进。可以在气体入口组合件205内看到两个截然不同的气体供应通道。第一通道206携带通过远程等离子体系统(RPS)201的气体,而第二通道207绕过RPS 201。在揭示的实施例中,第一通道206可用于工艺气体,并且第二通道207可用于处理气体。工艺气体可以在进入第一等离子体区域215之前在远程等离子体系统(RPS)201内被激发。依据所揭示的实施例图示盖体212、喷洒头225及上面放有基板255的基板支座265。盖体212可以是金字塔形、圆锥形或具有狭窄顶部扩展到宽底部的另一个类似结构。也可以使用其它几何形状的盖体212。图示盖体(或导电顶部)212和喷洒头225之间具有绝缘环220,绝缘环220使得AC电势可被相对于喷洒头225施加到盖体212。绝缘环220可以位于盖体212和喷洒头225之间,以能够在该第一等离子体区域中形成电容耦合等离子体(CCP)。第一等离子体区域215中可以另外放置挡板(未图示),以影响经由气体入口组合件205进入该区域的流体流动。
可以藉由本文所述的喷洒头的实施例使诸如前驱物的流体(例如含硅前驱物)流入处理区域233。衍生自等离子体区域215中的工艺气体的激发物种可以穿过喷洒头225中的孔,并与从喷洒头流入处理区域233的前驱物反应。处理区域233中存在很少等离子体或没有等离子体存在。在揭示的应用中,工艺气体和前驱物的激发衍生物可以在基板上方的区域中结合,而且有时可以在基板上结合,以在基板上形成可流动的膜。对于流动性膜,随着膜的生长,更晚添加的材料可以比下方的材料具有更高的流动性。随着有机物含量因蒸发而减少,流动性可能会降低。使用这种技术可以由流动性膜填充缝隙,而不会在沉积完成之后在膜内留下传统的有机物含量密度。仍然可以使用固化步骤来进一步减少或去除沉积膜的有机物含量。
在第一等离子体区域215中直接激发工艺气体、在RPS中激发工艺气体或上述两者皆可以提供几项效益。由于第一等离子体区域215中的等离子体,可以增加处理区域233内衍生自工艺气体的激发物种浓度。这种增加可能因为第一等离子体区域215中的等离子体的位置。处理区域233可以比远程等离子体系统(RPS)201更靠近第一等离子体区域215,以留下较少的时间让激发物种经由与其它气体分子、腔室壁及喷洒头表面碰撞而离开激发态。
处理区域233内衍生自工艺气体的激发物种的浓度均匀性也可以增加。这可能是第一等离子体区域215的形状所导致,第一等离子体区域215的形状可以与处理区域233的形状更相似。远程等离子体系统(RPS)201中产生的激发物种相对于通过喷洒头225中心附近的孔的物种可以行进更远的距离,以通过喷洒头225边缘附近的孔。较长的距离可以导致减少的激发物种激发,例如可能会导致在基板边缘附近的生长速率较缓慢。在第一等离子体区域215中激发工艺气体可以减轻这种变化。
处理气体可以在RPS 201中被激发,并且可以在激发状态中通过喷洒头225到达处理区域233。或者,可以施加功率到第一处理区域,以激发等离子体气体或是增强来自RPS已经激发的工艺气体。虽然可以在处理区域233中产生等离子体,但可以替换地不在处理区域中产生等离子体。在一个实例中,处理气体或前驱物的仅有激发可以来自于激发RPS 201中的处理气体,以与处理区域233中的前驱物反应。
处理腔室及此讨论的工具在2008年9月15日提出申请的专利申请案序号第12/210,940号和2008年9月15日提出申请的专利申请案序号第12/210,982号中有更全面的描述,在不会与所要求保护的态样和本文的描述不一致的程度下将该等专利申请案以引用方式并入本文中。
图2B-2C为在本文所述处理腔室和气体分配组合件中的前驱物流动工艺的一个实施例的侧面示意图。可以将处理腔室部分200中使用的气体分配组合件称为双通道喷洒头(DCSH)或三通道喷洒头(TCSH)并详细描述在这里的图3A-3E、图4A-4B及图5A-5C的实施例中。该双通道或三通道喷洒头可以允许流动地沉积介电质材料,以及在操作过程中分离前驱物和处理流体。可以替代地将该喷洒头用于允许在反应区外面分离蚀刻剂的蚀刻工艺,以提供与腔室组件的有限交互作用。
可以藉由首先引入内部喷洒头容积294而将前驱物引入分配区,内部喷洒头容积294藉由第一歧管或上板材226和第二歧管或下板材227而被界定于喷洒头225中。该等歧管可以是界定多个孔的多孔板材。内部喷洒头容积294中的前驱物可以经由下板材中形成的孔296流动295进入处理区域233。此流动路径可以与腔室中其余的工艺气体分离,并且可供处于未反应或基本上未反应状态的前驱物使用,直到进入基板217和下板材227底部之间界定的处理区域233中。一旦在处理区域233中,则前驱物可以与处理气体反应。可以经由喷洒头中形成的侧通道(例如如本文中的喷洒头实施例中所图标的通道322、422)将前驱物引入喷洒头225中界定的内部喷洒头容积294。工艺气体可以处于等离子体状态,该等离子体状态包括来自RPS单元或来自第一等离子体区域中产生的等离子体的自由基。此外,还可以在处理区域中产生等离子体。
也可以提供处理气体进入由面板材217和喷洒头225的顶部界定的第一等离子体区域215或上容积。处理气体可以是在第一等离子体区域215中被激发的等离子体,以产生工艺气体等离子体和自由基。或者,在引入到面板材217和喷洒头225顶部界定的第一等离子体处理区域215之前,在通过远程等离子体系统之后处理气体可以已经处于等离子体状态。
然后包括等离子体和自由基的处理气体可以经由通道(例如由喷洒头板材或歧管中的孔形成的通道290)被输送到处理区域233,以与前驱物反应。通过通道的处理气体可以与内部喷洒头容积294流体隔离,并且当处理气体和前驱物皆通过喷洒头225时,处理气体可以不与通过内部喷洒头容积294的前驱物反应。一旦在处理容积中,则处理气体和前驱物可以混合并反应。
除了工艺气体和介电质材料前驱物之外,可以为了不同的目的在不同的时间引导其它气体。在沉积过程中,可以引导处理气体来从腔室壁、基板、沉积薄膜及/或薄膜去除不要的物种。可以在等离子体中激发处理气体,然后使用处理气体来减少或去除腔室内残留的含量。在其它所揭示的实施例中,也可以使用没有等离子体的处理气体。当处理气体包括水蒸汽时,可以使用质量流量计(MFM)、喷射阀或由市售的水蒸汽产生器来实现输送。可以从第一处理区域引导处理气体经过RPS单元或绕过RPS单元,而且可以进一步在第一等离子体区域中激发处理气体。
孔291的开口的轴292和孔296的开口的轴297可以是彼此平行或大致上彼此平行的。或者,轴292和轴297可以彼此成一定角度,例如从约1°至约80°,例如从约1°至约30°。或者,每一个个别的轴292可以彼此成一定角度,例如从约1°至约80°,例如从约1°至约30°,而且每个个别的轴297可以彼此成一定角度,例如从约1°至约80°,例如从约1°至约30°。
个别的开口可以是倾斜的,例如图2B中的孔291所图示,并且开口具有从约1°至约80°的角度,例如从约1°至约30°。孔291的开口的轴292和孔296的开口的轴297可以垂直于或大致上垂直于基板217的表面。或者,轴292和轴297可与基板表面成一定角度,例如少于约5°。
图2C图示处理腔室200和喷洒头225的局部示意图,该示意图说明来自内部容积294的前驱物流动295经由孔296进入处理区域233。该图还说明图示两个孔296的轴297和297'彼此成一定角度的替代实施例。
图2D图示依据本技术的实施例的另一个示例性处理系统200的简化剖面图,处理系统200可以包括替代的流体输送系统。处理气体的分配可以藉由使用如图所示的面板材217来实现。可以经由流体供应系统210输送处理气体,并且腔室可以包括或不包括如前面所述包括RPS 201、第一等离子体区域215、绝缘环220、喷洒头225、处理区域233、基座265及基板255的组件。该系统还可以在修改后的分配系统中包括冷却板材203。
取决于RPS 201的使用,等离子体产生气体及/或等离子体激发物种可以通过面板材217中的多个孔,如图2E所示,以更均匀地输入第一等离子体区域215。示例性的架构包括使气体入口组合件205开口进入气体供应区域258,气体供应区域258由面板材217与第一等离子体区域215分隔开,使得气体/物种流经面板材217中的孔进入第一等离子体区域215。可以选择结构和操作上的特征,以防止等离子体从第一等离子体区域215明显回流返回进入供应区域258、气体入口组合件205及流体供应系统210。结构特征可以包括选择使回流等离子体失活的面板材217中的孔的尺寸和横截面几何形状。操作特征可以包括保持气体供应区域258和第一等离子体区域215之间的压力差,该压力差保持等离子体单向流动通过喷洒头225。
处理系统还可以包括与处理腔室电耦接的电源240,以提供电力给面板材217及/或喷洒头225,而在第一等离子体区域215或处理区域233中产生等离子体。可以设置电源来根据进行的工艺输送可调整的功率量到腔室。
图2E图示影响通过面板材217的处理气体分布的特征的详细视图。如图2D和图2E中所图示,面板材217、冷却板材203及气体入口组合件205相交而界定气体供应区域258,可以将工艺气体从气体入口205输入气体供应区域258。气体可以填充气体供应区域258并经由面板材217中的孔259流至第一等离子体区域215。可以设置孔259来以大致上单向的方式导引流动,使得工艺气体可以流入处理区域233,但也可以部分地或完全地防止在穿过面板材217之后回流进入气体供应区域258。
另外的双通道喷洒头以及此处理系统和腔室被更全面地描述于2011年10月3日提出申请的专利申请案序号第13/251,714号中,为了所有的目的在不会与所要求保护的特征和本文的描述不一致的程度下将该专利申请案以引用方式并入本文中。
图3A图标气体分配组合件300的上透视图。在使用中,气体分配系统300可以具有大致上水平的方位,使得穿过气体分配系统300形成的气体孔的轴可以垂直于或大致上垂直于基板支座的平面(参见图2A中的基板支座265)。图3B图标气体分配组合件300的底部透视图。图3C为气体分配组合件300的底部平面图。图3D和图3E为气体分配组合件300的揭示实施例沿图3C的线A-A所取得的剖面视图。
参照图3A-3E,气体分配组合件300通常包括环形主体340、上板材320及下板材325。环形主体340可以是具有位于内径的内环形壁301、位于外径的外环形壁305、上表面315及下表面310的环。上表面315和下表面310界定环形主体340的厚度。导管350或环形温度通道可以被界定于环形主体内,并且可配置成接收冷却流体或加热元件,冷却流体或加热元件可被用于维持或调节环形主体的温度。如图3A所图标,冷却通道350可以在环形主体的外径305上包括入口和出口。这可以提供从处理腔室侧的通道,可以使冷却流体从该通道流过。图3B中图示另外的实施例,其中可以将导管355形成在底部表面310中,并且可以将加热元件配置在导管355中。加热器凹部342可以被形成在底部表面310中,并适用于固持加热元件,而且加热器凹部342提供了将加热元件放在环形温度通道或导管355内的通道。
可以将一或更多个凹部及/或通道形成于环形主体中或一或更多个凹部及/或通道可以由环形主体界定,如在揭示的实施例中图示的,包括图3D中图示的。环形主体可以包括形成在上表面中的上凹部303以及形成在下表面中的内环形壁301处的第一下凹部302。上凹部303可以是形成在环形主体340中的第一上凹部。环形主体还可以包括形成在下表面310中并在第一下凹部302的下方且径向往外的第二下凹部304。如图3D所图示,第一流体通道306可以被界定于上表面315中,并且可以位于环形主体中从上凹部303径向往内处。第一流体通道306的形状可以是环形的,并可以形成环形主体340周围的整个距离。在揭示的实施例中,上凹部303的底部部分与第一流体通道306的外壁相交。第一流体通道也可以是从第二下凹部304至少部分地径向往外。可以在第一流体通道的内壁中界定多个通口312,也可以在环形主体340的内环形壁301中界定多个通口312。通口312可以提供第一流体通道与上板材320和下板材325之间界定的内部容积之间的通道。通口可以以特定的间隔被界定于通道的外周周围,并且可以促进上板材和下板材之间界定的整个容积区域的分配。通口312之间的间距间隔可以是固定的,或者可以在不同的位置变化,以影响进入容积的流体流动。第一流体通道306的径向内壁和外壁可以具有相似或不相似的高度。例如,可以将内壁形成为比外壁更高,以影响流体在第一流体通道中的分布,而避免或大致上避免流体流动于第一流体通道的内壁上方。
再次参照图3D,可以将第二流体通道308a界定在上表面315中,第二流体通道308a位于第一流体通道306径向往外的环形主体中。第二流体通道308a可以是环形的,并且位于从第一流体通道306径向往外且与第一流体通道306同心。第二流体通道308a也可以位于第一上凹部303的径向往外,使得第二流体通道308a未被上板材320覆盖,讨论如下。第二多个通口314可以被界定在环形主体340的一部分中,所述部分界定第一流体通道306的外壁和第二流体通道308a的内壁。第二多个通口314可以位于通道周围预定距离的间隔处,以在第二流体通道308a的几个位置提供到第一流体通道306的流体通道。可以将第二上凹部309形成在第二流体通道308a的顶部中以及在第二流体通道的内壁和外壁两者中。第二上凹部可配置成接收环形构件316,环形构件316可藉由径向往内和往外延伸进入环形主体并越过通道的内壁和外壁进入凹部空间309而被定位来覆盖第二流体通道。可以将环形构件316与环形主体340烧黏,以从上方与第二流体通道308a流体隔绝。在操作中,前驱物可以从处理腔室的外部流至位于环形主体340侧边的输送通道322。流体可以流入第二流体通道308a、通过第二多个通口314进入第一流体通道306、通过第一多个通口312进入上和下板材之间界定的内部容积以及通过位在底部板材中的第三孔375。因此,可以将以这样的方式提供的流体与经由孔360输入第一等离子体区域的任何流体隔离或大致上隔离,直到流体个别离开下板材325。
藉由提供环形构件316来覆盖第二流体通道308a,可以大致上消除第一和第二流体通道之间的泄漏,而且在揭示的实施例中可以完全消除第一和第二流体通道之间的泄漏。环形构件316可以与环形主体340耦接,例如藉由在凹部309中黏合通道的两侧。由于环形构件316并未径向延伸超出第二流体通道308a和凹部309的宽度,故环形构件316较不易产生径向变形。因此,可以产生改良的覆盖轮廓,并且可以大致地或完全地防止从第二流体通道的泄漏。
上板材320可以是圆盘形的主体,并且可以在第一上凹部303与环形主体340耦接。因此,上板材320可以覆盖第一流体通道306,以防止或大致上防止流体从第一流体通道306的顶部流出。上板材可以具有选择来与上凹部303的直径相配合的直径,并且上板材可以包含多个贯穿上板材形成的第一孔360。第一孔360可以延伸超出上板材320的底部表面,从而形成数个凸起的筒体。在每个凸起的筒体之间可以有缝隙。如图3A所见,可以在上板材320上将第一孔360排列成多边形图案,使得通过最外面的第一孔360的中心画出的假想线界定或大致上界定多边形的图,该图可以是例如六边的多边形。
该图案还可以具有第一孔360的交错的行阵列的特征,第一孔360的行数从约5至约60行,例如从约15至约25行。每一行沿着y轴可以具有从约5至约20个第一孔360,并且每一行被介于约0.4和约0.7英寸之间的间距隔开。在一行中的每个第一孔360可以沿着x轴与前一个孔从各自的直径相距约0.4和约0.8英寸之间。第一孔360可以沿着x轴与另一行中的孔从各自的直径错开约0.2和约0.4英寸之间。在每一行中可以将第一孔360以等间距彼此隔开。参照图3D,上板材320的边缘部分可以包含第二厚度,第二厚度大于位于更靠近板材中央部分的第一厚度,并且第二厚度可以等于或大致上等于第一上凹部303外壁的高度。边缘部分可以从外边缘径向往内延伸等于或大致上等于上凹部的底部部分的距离。因此,在揭示的实施例中,边缘部分可以不径向往内延伸超过第一上凹部303的最往内部分。
下板材325可以具有圆盘形的主体,该圆盘形的主体具有数个穿过该主体形成的第二孔365和第三孔375,特别是如图3C所见。下板材325可以有多个厚度,并且界定部分的厚度大于上板材320的中央厚度,而且在揭示的实施例中,界定部分的下板材325厚度为上板材320厚度的至少约两倍。下板材325还可以具有与环形主体340在第一下凹部302的内环形壁301的直径相匹配的直径。如前所述,下板材325可以包含多个厚度,例如板材的第一厚度可以是第三孔375延伸通过的厚度。大于第一厚度的第二厚度可以是与环形主体340的第一下凹部302相交的板材边缘区域的厚度。可以将相对于第一下凹部的第二厚度的尺寸制作为类似于相对于第一上凹部的上板材边缘部分。在揭示的实施例中,第一和第二厚度大致上是相似的。大于第二厚度的第三厚度可以是围绕第二孔365的板材厚度。例如,第二孔365可以被下板材325界定为向上延伸到上板材320的筒体。以这种方式,可以在彼此流体隔离的第一和第二孔之间形成通道。此外,可以将上板材和下板材之间形成的容积与第一和第二孔之间形成的通道流体隔离。因此,流过第一孔360的流体将流过第二孔365,并且在板材之间的内部容积内的流体将流过第三孔375,而且流体彼此间将被流体隔离,直到经由第二或第三孔离开下板材325为止。这种分离可以提供许多效益,包括防止自由基前驱物在到达反应区之前接触第二前驱物。藉由防止气体的相互作用,可以在需要沉积的处理区域之前最小化腔室内的沉积。
可以将第二孔365排列在与上述第一孔360的图案对齐的图案中。在一个实施例中,当将上板材320和底部板材325定位成一个在另一个的顶部时,第一孔360和第二孔365的轴是对齐的。在揭示的实施例中,上板材和下板材可以彼此耦接或直接接合在一起。在任何一种情况下,板材的耦接可以发生,使得第一和第二孔对齐而形成通过上板材和下板材的通道。多个第一孔360和多个第二孔365可以使各自的轴互相平行或大致上互相平行,例如孔360、365可以是同心的。或者,多个第一孔360和多个第二孔365可以使各自的轴相互呈约1°至约30°的角度配置。在底部板材325的中心可以没有第二孔365。
如前所述,气体分配组合件300通常是由环形主体340、上板材320及下板材325所组成。下板材325可以位于第一下凹部303内,并使凸起的筒体面向上板材320的底部表面,如图3D所图示。然后可以将底部板材325定位在第一下凹部304中,并将底部板材325转动定位,使得第一和第二孔360、365的轴可以对齐。可以将上板材320与底部板材325密封耦接,以将第一和第二孔360、365与第三孔375流体隔离。例如,可以将上板材320焊接于底部板材325,使得下板材325上的凸起筒体的表面和上板材320的底部表面之间产生密封。然后可以将上板材320和底部板材325以电子束焊接或其它方式结合于环形主体340。可以用电子束焊接上板材320,使得环形主体的外缘和上凹部303的内缘之间产生密封。可以用电子束焊接底部板材325,使得环形主体的外缘和内环形壁301之间产生密封。在揭示的实施例中,气体分配组合件300的表面可以是电抛光的、镀有金属的或是涂有各种金属类物质或氧化物的。
多个第二孔365和多个第三孔375可以形成交替的交错行。可以将第三孔375排列在底部板材325的至少两个第二孔365之间。在每个第二孔365之间可以有第三孔375,第三孔375在两个第二孔365之间被均匀地隔开。还可以有数个第三孔375以六边形的图案位在底部板材325的中心周围,例如6个第三孔,或是数个第三孔375形成另一种几何形状。底部板材325的中心可以没有第三孔375形成。在形成第二孔多边形图案顶点的周边第二孔365之间也可以没有设置第三孔375。或者,可以有第三孔375位于周边第二孔365之间,而且还可以有另外的第三孔375位于从周边第二孔365往外,而形成最外环的孔,例如如图3C中所图示。
或者,第一和第二孔的排列可以形成任何其它的几何图案,并且可以分布成基于板材中心位置彼此同心往外设置的孔环。作为一个实例并且不限制本技术的范围,图3A图示由该等孔形成的图案,该图案包括从中心往外延伸的同心六边形环。每个往外设置的环可以具有与前述往内设置的环相同数量、更多的或更少的孔。在一个实例中,基于每个环的几何形状,每个同心环可以具有额外数量的孔。在六边形的实例中,每个向外移动的环可以比直接向内设置的环多6个孔,并且第一个内环具有6个孔。有了位置最接近上板材和底部板材中心的第一孔环,上板材和底部板材可以具有两个以上的环,并且取决于所使用的孔几何图案,上板材和底部板材可以具有介于约1个和约50个之间的孔环。或者,板材可以具有约2个和约40个之间的环,或多达约30个环、约20个环、约15个环、约12个环、约10个环、约9个环、约8个环、约7个环、约6个环等或更少的环。在一个实例中,如图3A所图示,在示例性的上板材上可以有9个六边形环。
同心孔环也可以没有其中一个同心孔环,或是同心孔环可以从其它的环之间移除向外延伸的一个孔环。例如参照图3A,其中板材上有示例性的9个六边形环,但该板材可以替代地具有8个环,而且可以是第4环被移除。在这样的实例中,可以不在原本所要设置第4环的地方形成通道,这可以重新分配通过孔的气体流体流动。这些环仍然还可以从几何图案移除某些孔。例如再次参照图3A,可以将第10个六边形孔环形成在图示的板材上作为最外面的环。然而,该环可以不包括可形成六边形图案顶点的孔或其它在该环内的孔。
第一、第二及第三孔360、365、375可以全部适用于允许流体通过这些孔。第一和第二孔360、365可以具有圆柱形的形状,并且可以替代地具有各种不同的横截面形状,包括圆锥形、圆柱形或多种形状的组合。在一个实例中,如图3D所图示,第一和第二孔可以具有大致上圆柱形的形状,并且第三孔可以由一系列不同直径的圆柱所形成。例如,第三孔可以包含三个圆柱,其中第二圆柱的直径小于其它圆柱的直径。可以使用这些和许多其它的变化来调节流体通过该等孔的流动。
当所有的第一和第二孔具有相同的直径时,通过通道的气体流动可能不会是均匀的。当工艺气体流入处理腔室时,气体的流动可以是例如较大量的气体优先流过某些通道。因此,可以将某些孔的直径自某些其它的孔缩小,以在前驱物流被输入第一等离子体区域时重新分配前驱物流。可以由于该等孔的相对位置(例如靠近挡板)而选择性地缩小该等孔的直径,因此,可以缩小靠近挡板的孔的直径,以减少通过这些孔的工艺气体流量。在一个实例中,如图3A所图示,其中9个六边形的第一孔环同心地位于板材上,某些孔环可以使一些或全部的孔直径缩小。例如,第4环可以包括直径比其它环的第一孔小的第一孔子集。或者,第2环至第8环、第2环至第7环、第2环至第6环、第2环至第5环、第2环至第4环、第3环至第7环、第3环至第6环、第3环至第5环、第4环至第7环、第4环至第6环、第2环和第3环、第3环和第4环、第4环和第5环、第5环和第6环等或是一些环的其它组合可以使位于该等环中的一些或全部的孔的孔径缩小。
再次参照图3D,可以将一对隔离通道318形成在环形主体340中。该对隔离通道318的其中一个可以被界定在环形主体340的上表面315中,而该对隔离通道318的另一个可以被界定在环形主体340的下表面310中。该对隔离通道可以彼此垂直对齐,而且在揭示的实施例中,该对隔离通道可以处于直接垂直对齐。或者,该对隔离通道可以在任一方向偏离垂直对齐。在揭示的实施例中,该等通道可以提供诸如O形环的隔离阻障件所用的位置。
来到图3E,依据揭示的实施例图标出气体分配组合件的附加特征,并且该等附加特征可以包括许多上述关于图3D的特征。组合件300包括具有内环形壁301、外环形壁305、上表面315及下表面310的环形主体340。环形主体340可以另外包括上凹部303、第一下凹部302及第二下凹部304。环形主体还可以具有形成在上表面315中的第一流体通道306,并具有多个界定在内通道壁中的通口312,通口312提供流体进入上板材320和下板材325之间形成的容积的通道。下板材325可以在第一下凹部302与环形主体340耦接。下板材325还可以另外界定第一和第二孔,如以上关于图3D所讨论的。
上板材320可以在上凹部303与环形主体340耦接。可以类似于图3D的第一流体通道306界定第一流体通道306。或者,第一流体通道306的内壁和外壁可以具有大致上相似的高度,而且在揭示的实施例中,第一流体通道306的内壁和外壁可以具有相同的高度。上板材320可以覆盖第一流体通道306,以防止来自第一流体通道306顶部的流动路径。第一多个通口312可以类似于图3D中的通口312被界定于环形主体中。或者,第一多个通口312可以在内环形壁301被部分地形成于上表面315中。当上板材320与环形主体340耦接时,上板材可以进一步界定多个通口312的顶部。
可以在环形主体340的上表面315中形成第二流体通道308b,并且第二流体通道308b可配置成接收通过流体输送通道322输送的流体,如前面所述。然而,第二流体通道308b可以位于从第一上凹部303径向往内,使得第二流体通道308b被上板材320覆盖。第二流体通道308b的外壁可以和上凹部303的底部相交。可以由形成第二流体通道308b内壁和第一流体通道306的外壁的环形主体的部分界定第二多个通口314。该等通口可以提供第一和第二流体通道之间的流体连通,并且可以类似地位于如上所述之处。上板材320可配置成在与环形主体340接触的每个接面限制变形。例如,上板材320可以在设置孔的上板材320的中央部分中具有第一厚度,并且在板材的边缘部分可以具有大于第一厚度的第二厚度。这些边缘部分可以从上凹部303延伸于第二流体通道308b、第一流体通道306及内环形壁301上方。上板材320在边缘部分增加的厚度可以更好地吸收在上板材耦接于环形主体的过程中产生的应力,从而减少变形。
部分的上板材320可以延伸进入第二流体通道308b一段距离。该部分的上板材可以延伸进入第二通道到上凹部303的底部以下一段高度。在揭示的实施例中,在上表面315中将第二流体通道308b形成到比第一流体通道306更大的深度。上板材320延伸进入第二流体通道308b的部分可以延伸到与第一流体通道306在环形主体340内的深度相同的深度。藉由使部分的上板材延伸进入第二流体通道308b,当将上板材与环形主体340耦接时可能出现的上板材变形可以不会在第一和第二流体通道之间产生任何泄漏路径,因为变形的程度可以被上板材320延伸进入第二流体通道308b的量所克服。可以类似于图3D的通口314来界定第二多个通口314,或者可以类似于第一多个通口312将第二多个通口314部分地形成在上表面中。多个通口314的顶部可以由上板材320的底部表面界定。可以在第二流体通道308b和第一流体通道306之间以垂直增加的角度形成第二多个通口314。藉由以一定的角度形成该等通口,该等通口可以不会被延伸进入第二流体通道308b的上板材部分阻塞。在揭示的实施例中,第二多个通口314可以是形成在环形主体中的各种形状或尺寸的狭缝。可以以从第二流体通道308b往第一流体通道306增加或向上的角度形成该等狭缝,使得该等通口在上板材320延伸进入第二流体通道308b的该部分下方为流体连通的。
在揭示的实施例中,可以将一对隔离通道324形成在气体分配组合件中,其中至少一部分的隔离通道与环形主体形成第二流体通道308b内壁和第一流体通道306内壁的部分垂直对齐。为了产生这种配置,可以将该对隔离通道中的一个界定在上板材中从第一上凹部径向往内的位置。可以将该对隔离通道中的另一个界定在环形主体的下表面310中,并且该对隔离通道可以彼此垂直对齐。在揭示的实施例中,该对隔离通道可以处于直接垂直对齐。在操作中,隔离通道可以接收例如O型环或其它的隔离装置。藉由在与第一和第二流体通道的共享壁至少部分对齐的位置提供隔离通道,可以使用在隔离通道产生的压缩来偏移、减少或去除在上板材320和环形主体的接面处可能发生的变形。
参照图4A-4B,提供的气体分配组合件400或喷洒头包括第一或上板材420和第二或下板材425,并且可以将下板材425的顶部设置成与上板材420的底部耦接。上板材和下板材可以是具有多个孔的多孔板材,该多个孔被界定在每块板材中。在使用中,可以用使喷洒头中形成的任何孔的轴可以垂直于或大致上垂直于基板平面的这种方式来设定喷洒头400对基板的方位。
参照图4B,环形主体440可以包括在上表面415中的上凹部403和在下表面410中的下凹部402。第一流体通道406可以被界定在下表面410中,并且可以从下凹部402径向往内位于环形主体中。第一流体通道的形状可以是环形的,并且该通道可以被下板材425覆盖。可以在内环形壁401将多个通口412至少部分地界定在环形主体中,并且可以沿着整个通道在界定的间隔处设置多个通口412,该等间隔可以相等或是在该多个通口各处被修改。在揭示的实施例中,下板材425可以界定多个通口412的顶部部分。可以在上凹部403将上板材420与环形主体440耦接,并且上板材420可以界定多个第一孔460。可以在下凹部402将下板材425与环形主体440耦接,并且下板材425可以覆盖第一流体通道406。下板材425可以界定多个第二孔465,多个第二孔465可以与上板材420中界定的第一孔460对齐,以形成穿过组合件400的第一组通道。下板材425还可以界定多个位于第二孔465之间和周围的第三孔475。下板材425可以包括在第二孔465周围的凸起部分,该凸起部分向上延伸到上板材420,以产生穿过组合件的流体隔离的通道。
可以将上板材和下板材彼此密封耦接,使得第一和第二孔以该凸起部分对齐而形成通过上板材和下板材的通道,使得内部容积被界定于上板材和下板材之间。可以经由多个通口412流体连接该容积。可以配置该组合件,使得第一流体可以流过第一孔并经由第一和第二孔之间形成的隔离通道延伸通过组合件400。此外,可以使第二流体经由第一流体通道406并输入上板材和下板材之间界定的容积而流过该组合件。流过该容积的流体可以流过第三孔和下板材凸起部分的周围,使得第一和第二流体可以经由喷洒头流体隔离并保持分离,直到第一和第二流体分别通过第二和第三孔离开下板材为止。
可以将第一孔460成形为抑制离子带电物种迁移出前述的第一等离子体区域215,同时允许不带电的中性或自由基物种通过喷洒头225或气体分配组合件400。这些不带电的物种可以包括由较低反应性的载送气体输送通过孔的高反应性物种。如上所注意的,可以减少通过孔的离子物种迁移,并且在某些情况下可以完全抑制通过孔的离子物种迁移。控制通过气体分配组合件400的离子物种量可以对被带入而与下方的晶圆基板接触的气体混合物提供增多的控制,进而增加对气体混合物的沉积及/或蚀刻特性的控制。因此,在揭示的实施例中,第一孔可以包括以逐漸减小的直径延伸通过上板材的锥形形状,以控制流体的特性。具体地,此上板材可以作为离子抑制板材或离子阻挡件,使得配置有效地将离子抑制直接结合于喷洒头设计中,而且可以不用额外需要另外的抑制元件。
每个第一孔460可以具有往第一圆柱形部分逐渐变细的锥形入口部分,该第一圆柱形部分与第二孔465相交。第二孔可以包括各种形状的多个部分,以进一步影响通过第一和第二孔之间形成的通道的流体流动。在示例性的设计中,第二孔465可以包括多个直径增加并通向锥形部分的圆柱形部分,该锥形部分以增加的直径延伸到下板材425的底部。第三孔475可以同样地包括各种形状的多个部分,并且在示例性的配置中,第三孔475可以包括多个直径减少并通向锥形部分的圆柱形部分,该锥形部分以增加的直径延伸到下板材425的底部。在揭示的实施例中,该第二和第三孔包括至少三段不同的形状或直径。
对于离子抑制组合件,例如示例性的配置组合件400,孔的数量可以大于例如图3D和图3E的示例性组合件配置中的孔的数量。提供更大量的孔可以增加输入腔室的处理区域的物种的密度。图4A图标气体分配组合件400的底视图,气体分配组合件400包括具有第二孔465和第三孔475的下板材425。虽然只图示出四分之一圆的孔,将容易了解的是,该等孔被类似地界定于该组合件的全部四个四分之一圆中。虽然图3A图示示例性的9个六边形孔环,但例如图4A图示的大小类似的气体分配组合件可以包括约18个和25个之间的孔环。在图4A-4B中图标的高密度设计中的孔的总数可以包括2-10倍多的第二孔和第三孔总数。如图3E所图标的高密度配置可以包括直接在板材中心的附加第二孔365。
参照回图4B,气体分配组合件可以另外包括界定于下表面410中的第二流体通道408,第二流体通道408位于从第一流体通道406径向往外的环形主体440中。可以在整个环形主体360周围形成第二流体通道408,并且第二流体通道408还可以与第一流体通道406同心。可以将第二多个通口414界定于环形主体中的至少一部分中,所述环形主体中的该至少一部分为界定第一流体通道406的外壁和第二流体通道408的内壁的部分。第二流体通道408也可以位于下凹部的径向往内处,使得第二流体通道被下板材425覆盖。与图3E中描述的设计类似,一部分的下板材可以延伸进入第二流体通道408。
该部分的下板材425可以延伸进入第二通道至下凹部402的顶部上方某个高度。在揭示的实施例中,在下表面410中将第二流体通道408形成至比第一流体通道406更高的高度。下板材425延伸进入第二流体通道408的该部分可以在环形主体440内延伸到相当于第一流体通道406或更小的高度,或延伸到相当于约第一流体通道406的一半高度的高度。如上所说明的,延伸进入第二流体通道408的下板材部分可以限制当下板材与环形主体440耦接时可能发生的下板材变形的影响。可以类似于图3D或图3E的通口来界定第二多个通口414,但是是在下表面410中。多个通口414的底部可以由下板材425的顶部表面界定。
可以在第二流体通道408和第一流体通道406之间以垂直减少的角度形成第二多个通口414。藉由以一定的角度形成该等通口,该等通口可以不会被下板材延伸进入第二流体通道408的部分阻塞。在揭示的实施例中,第二多个通口414可以是形成在环形主体中的各种形状或尺寸的狭缝,而且可以以从第二流体通道408往第一流体通道406向下的角度形成该等狭缝,使得该等通口在下板材延伸进入第二流体通道408的该部分上方为流体连通的。在操作中,可以经由腔室中的侧边通口(例如流体输送通道422)输送流体通过气体分配组合件400。流体可以流入第二流体通道408,然后通过第二多个通口414,第二多个通口414可以将第二流体通道408与第一流体通道406流体耦接。然后,流体可以流过第一多个通口412,第一多个通口412将第一流体通道406与上板材420和下板材425之间界定的容积流体耦接。流体可以继续流过第三孔475而进入处理区域。在此配置中,可以将这样的流体与形成通过气体分配组合件的通道的第一和第二孔流体隔离。以此方式,该分配组合件可以防止此流体的流动进入第一孔,并且可以在没有压力差或强制流动下防止流体流过气体分配组合件的顶部。
图5A图示示例性的气体分配组合件500,气体分配组合件500配置成提供到处理区域的三个隔离的流体路径。组合件500可以包括与先前所述类似的组件,包括具有位于内径的内环形壁501、位于外径的外环形壁505、上表面515及下表面510的环形主体540。气体分配组合件500可以包括与环形主体540耦接的上板材520,上板材520界定第一组孔。中间板材530可以与上板材520耦接,并且可以包含多个第二孔和多个第三孔。可以耦接中间板材530,使得第二孔与上板材的第一孔对齐。该组合件可以另外包括与环形主体540和中间板材530耦接的下板材525。下板材525可以界定与上板材的第一孔和中间板材的第二孔对齐的多个第四孔,以形成通过板材的第一多个流体通道561。下板材也可以界定与中间板材的第三孔对齐的第五组孔,以形成通过中间板材和下板材的第二多个流体通道566。可以将第二多个流体通道566与第一多个流体通道561流体隔离。下板材还可以界定第六组孔,该第六组孔形成通过下板材的第三多个流体通道576。可以将第三多个流体通道576与第一和第二多个流体通道流体隔离。
在操作中,可以配置气体分配组合件,使得两种流体可以从侧边被输入喷洒头但在该组合件中形成的两个流体隔离的容积中保持流体分离。可以从气体分配组合件500的上方输送第一流体,并且该第一流体可以包括例如RPS或第一等离子体区域中产生的自由基物种。该第一流体可以流过第一多个流体通道561,可以将第一多个流体通道561个别隔离,并且无法从组合件容积内进入第一多个流体通道561。可以将第二流体从侧边通口或第一输送通道引入喷洒头中,第一输送通道在上板材520和中间板材530之间输送第二流体。第二流体可以在此第一界定的容积内流动,并通过第二多个流体通道。这些通道也可以与穿过组合件形成的其它通道流体隔离。可以将第三流体从另外的侧边通口或第二输送通道引入喷洒头中,第二输送通道在中间板材530和下板材525之间输送第三流体。第三流体可以在此第二界定的容积内流动,并通过第三多个流体通道,第三多个流体通道可以与穿过组合件形成的其它通道流体隔离。可以将另外的侧边通口或第二输送通道以及第二界定容积与第一输送通道和第一界定容积流体隔离。以此方式,可以将三种流体经由单一气体分配组合件输入处理区域,但可以将该等流体分开直到该等流体各自离开气体分配组合件并进入处理区域。
虽然各种孔的配置也被所揭示的技术涵括,但图5B和图5C图示第四孔567、第五孔568及第六孔577的两个示例性配置。附图显示下板材525和第四、第五及第六孔的示例性方位的部分平面图。在一些揭示的配置中,下板材可以包括的第四、第五及第六孔方位使得大部分的第四孔567每个皆被至少四个第五孔568和四个第六孔577包围。
如图5B所图示,第四孔567可以具有四个第五孔568位于每个第四孔567周围。此外,四个第六孔577也可位于每个第四孔567的周围。在此配置中,第五孔568a-d可以位于第四孔567周围,并且如由图所辨识,第五孔的中心绕着一个第四孔567的中心彼此间隔约90°。同样地,第六孔577可以位于第四孔周围,并且如由图所辨识,第六孔的中心绕着第四孔577的中心彼此间隔约90°。第六孔577还可以绕着第四孔577的中心与第五孔568偏离约45°,如由图所辨识。每个第五孔568可以另外地具有四个第六孔577,四个第六孔577绕着第五孔568的中心以彼此间隔约90°位于第五孔568的周围,如由图所辨识。也可以将该等孔视为基于第四孔567和第五孔568的孔的行。如图5B所示,第四孔567或第五孔568的每个水平行以各行的第四或第五孔与第六孔577交错。该等行在交替的行中额外位移一个孔,使得每一个第四或第五孔在每个交替的行中具有位于上方或下方的第六孔。
如图5C所图示,第四孔567可以具有四个或更多的位于每个第四孔567周围的第五孔568。第六孔568可以与第四孔567位于交错的列中。此外,6个第六孔577也可以被定位在每个第四孔567周围。在此配置中,第五孔568可以位于第四孔567周围,并且第五孔的中心绕着第四孔567的中心彼此间隔约60°,如由图所辨识。同样地,第六孔577可以位于第四孔周围,并且第六孔的中心绕着第四孔577的中心彼此间隔约60°,如由图所辨识。第六孔577还可以绕着第四孔577的中心与第五孔568偏离约30°,如由图所辨识。第五孔568可以位于与每个第四孔567的中心相距第一径向距离。此外,第六孔577可以位于与每个第四孔567的中心相距第二径向距离。如图5C所图示,第二径向距离可以小于第一径向距离。其它揭示的实施例可以具有大于第一径向距离的第二径向距离。可以再次考虑该等孔为第四或第五孔的交错水平孔行。如附图中所示,每个第四或第五孔与同行中的下一个第四或第五孔间隔两个第六孔。可以将孔行偏离,使得每一行位移任两个第四或第五孔之间的一半距离,使得每隔一行的孔就第六孔577而言是对齐。
在前面的描述中,为了解释的目的,已经提出许多细节,以提供对本发明的各种实施例的了解。然而,本领域技术人员显而易见的是,可以在没有部分的这些细节或具有另外的细节之情况下实施某些实施例。
有了揭示的几个实施例,本领域技术人员将理解到,可以在不偏离揭示的实施例的精神下使用各种修改、替代结构以及均等物。此外,并未描述数个习知的工艺及元件,以避免不必要地混淆本发明。因此,不应将以上描述视为限制本发明的范围。
当提供数值的范围时,应了解到,除非内文以其它方式清楚指明,否则在该范围的上限与下限之间、每个到下限单位的最小分率的中间值也是被具体揭示的。在陈述范围中的任何陈述值或中间值与该陈述范围中的任何其它陈述值或中间值之间的每个较小范围亦被涵括。该等较小范围的上限与下限可独立地被包括或排除于该范围中,而且不论是该等较小范围包括任一限值、不包括二限值或是包括二限值,该等较小范围中的每个范围亦被涵括于本发明中,取决于该陈述范围中任何经具体排除的限值。当该陈述范围包括该等限值中的一者或二者时,排除该等包括的限值中的任一者或二者的范围亦被包括。
除非内文以其它方式清楚指明,否则本文中与所附权利要求中使用的单数形“一”及“该”包括复数的指示对象。因此,举例来说,提及“一孔”包括多个该种孔,而提及“该板材”包括提及一或更多个板材及其为本领域技术人员所习知的均等物,以此类推。
同样地,当用于本说明书中及以下权利要求中时,字眼“包含”、“含有”及“包括”意欲指明陈述的特征、整数、组件或步骤的存在,但该等字眼并不排除一或多个其它的特征、整数、组件、步骤、动作或群组的存在或加入。
Claims (22)
1.一种气体分配组合件,包含:
环形主体,包含:
内环形壁、外环形壁、上表面及下表面,所述内环形壁位于内径,所述外环形壁位于外径;
第一上凹部,形成在所述上表面中;
第一下凹部,在所述内环形壁处形成在所述下表面中;
第二下凹部,在所述第一下凹部下方并从所述第一下凹部径向往外而形成在所述下表面中;
第一流体通道,界定于所述上表面中,所述第一流体通道从所述第一上凹部径向往内位于所述环形主体中;
第二流体通道,界定在所述上表面中,所述第二流体通道从所述第一流体通道径向往外位于所述环形主体中,其中多个通口被界定在所述环形主体的一部分中,所述环形主体的所述部分界定所述第一流体通道的外壁和所述第二流体通道的内壁;
上板材,在所述第一上凹部处与所述环形主体耦接,并覆盖所述第一流体通道,其中所述上板材界定多个第一孔;以及
下板材,在所述第一下凹部处与所述环形主体耦接,包含:
多个第二孔,界定于所述下板材中,其中所述第二孔与界定于所述上板材中的所述第一孔对齐;
多个第三孔,界定于所述下板材中并位于所述第二孔之间;
其中所述上板材和所述下板材彼此耦接,使得所述第一孔与所述第二孔对齐而形成通道,所述通道穿过所述上板材和所述下板材。
2.如权利要求1所述的气体分配组合件,其中所述上板材和所述下板材黏合在一起。
3.如权利要求1所述的气体分配组合件,其中所述第二流体通道位于所述第一上凹部的径向往外处,使得所述第二流体通道未被所述上板材覆盖。
4.如权利要求3所述的气体分配组合件,其中第二上凹部被所述环形主体界定于所述第二流体通道的顶部附近并在所述内壁和外壁两者中,且其中所述气体分配组合件进一步包含环形构件,所述环形构件位于所述第二上凹部内,以便覆盖所述第二流体通道。
5.如权利要求1所述的气体分配组合件,其中所述第一上凹部包含底部部分,所述底部部分与所述第一流体通道的所述外壁相交。
6.如权利要求1所述的气体分配组合件,进一步包含一对隔离通道,其中所述一对隔离通道中的一者被界定于所述环形主体的所述上表面中,并且所述一对隔离通道中的另一者被界定于所述环形主体的所述下表面中,且其中所述一对隔离通道彼此垂直对齐。
7.如权利要求1所述的气体分配组合件,其中所述第二流体通道位于所述第一上凹部的径向往内处,使得所述第二流体通道被所述上板材覆盖。
8.如权利要求7所述的气体分配组合件,其中所述上板材的一部分延伸进入所述第二流体通道而位于所述第一上凹部的底部下方。
9.如权利要求8所述的气体分配组合件,其中所述多个通口从所述第二流体通道往所述第一流体通道向上成一角度,使得所述通口在延伸进入所述第二流体通道的所述上板材的所述部分下方可流体连通。
10.如权利要求7所述的气体分配组合件,进一步包含一对隔离通道,其中所述一对隔离通道中的一者在从所述第一上凹部径向往内的位置处被界定于所述上板材中,并且所述一对隔离通道中的另一者被界定于所述环形主体的所述下表面中,且其中所述一对隔离通道彼此垂直对齐。
11.如权利要求1所述的气体分配组合件,进一步包含环形温度通道,所述环形温度通道界定于所述环形主体中并配置成接收冷却流体,并可操作所述冷却流体来保持所述环形主体的温度。
12.如权利要求1所述的气体分配组合件,进一步包含环形温度通道,所述环形温度通道界定于所述环形主体中并配置成接收加热元件,所述加热元件位于所述环形温度通道内,并可操作所述加热元件来保持所述环形主体的温度。
13.一种气体分配组合件,包含:
环形主体,包含:
内环形壁、外环形壁、上表面及下表面,所述内环形壁位于内径,所述外环形壁位于外径;
上凹部,形成在所述上表面中;
下凹部,形成在所述下表面中;
第一流体通道,界定于所述下表面中,所述第一流体通道从所述下凹部径向往内位于所述环形主体中;
上板材,在所述上凹部处与所述环形主体耦接,其中所述上板材界定多个第一孔;以及
下板材,在所述下凹部处与所述环形主体耦接,并覆盖所述第一流体通道,所述下板材包含:
多个第二孔,界定于所述下板材中,其中所述第二孔与界定于所述上板材中的所述第一孔对齐;
多个第三孔,界定于所述下板材中并位于所述第二孔之间;
其中所述上板材和所述下板材彼此耦接,使得所述第一孔与所述第二孔对齐而形成通道,所述通道穿过所述上板材和所述下板材。
14.如权利要求13所述的气体分配组合件,进一步包含第二流体通道,界定在所述下表面中,所述第二流体通道从所述第一流体通道径向往外位于所述环形主体中,其中多个通口被界定在所述环形主体的一部分中,所述环形主体的所述部分界定所述第一流体通道的外壁和所述第二流体通道的内壁,其中该多个通口配置成流体耦接所述第二流体通道与所述第一流体通道。
15.如权利要求14所述的气体分配组合件,其中所述第二流体通道位于所述下凹部径向往内,使得所述第二流体通道被所述下板材覆盖,且其中所述下板材的一部分延伸进入所述第二流体通道而位于所述下凹部的顶部上方。
16.如权利要求15所述的气体分配组合件,其中所述多个通口从所述第二流体通道往所述第一流体通道向下成一角度,使得所述通口在延伸进入所述第二流体通道的所述下板材的所述部分上方可流体连通。
17.如权利要求13所述的气体分配组合件,其中所述第一孔包含锥形形状,其直径随着所述第一孔延伸通过所述上板材而减小,且其中所述第二孔和所述第三孔包含锥形形状,其直径随着所述第二孔和所述第三孔延伸通过所述下板材而增加。
18.如权利要求13所述的气体分配组合件,其中所述第二孔和所述第三孔各自包含至少三个形状或直径不同的部分。
19.一种气体分配组合件,包含:
环形主体,包含:
内环形壁、外环形壁、上表面及下表面,所述内环形壁位于内径,所述外环形壁位于外径;
上板材,与所述环形主体耦接,其中所述上板材界定多个第一孔;
中间板材,与所述上板材耦接,其中所述中间板材界定多个第二孔和第三孔,且其中所述第二孔与所述上板材的所述第一孔对齐;以及
下板材,与所述环形主体和所述中间板材耦接,包含:
多个第四孔,界定于所述下板材中,所述第四孔与所述上板材的所述第一孔及所述中间板材的所述第二孔对齐,以形成通过这些板材的第一组流体通道;
多个第五孔,界定于所述下板材中,所述第五孔与所述中间板材的所述第三孔对齐,以形成通过所述中间板材和所述下板材的第二组流体通道,其中所述第二组流体通道与所述第一组流体通道流体隔离,及
多个第六孔,界定于所述下板材中,所述第六孔形成通过所述下板材的第三组流体通道,其中所述第三组流体通道与所述第一和第二组流体通道流体隔离。
20.如权利要求19所述的气体分配组合件,其中所述下板材包括所述第四、第五及第六孔的方位使得各个所述第四孔被至少四个所述第五孔和四个所述第六孔包围。
21.如权利要求20所述的气体分配组合件,其中所述第五孔位于所述第四孔周围,并且所述第五孔的中心绕着所述第四孔的中心彼此间隔90°,且其中所述第六孔位于所述第四孔周围,并且所述第六孔的中心绕着所述第四孔的所述中心彼此间隔90°,并从所述第五孔偏离45°。
22.如权利要求20所述的气体分配组合件,其中所述第五孔位于所述第四孔周围,并且所述第五孔的中心绕着所述第四孔的中心彼此间隔60°,且其中所述第六孔位于所述第四孔周围,并且所述第六孔的中心绕着所述第四孔的所述中心彼此间隔60°,并从所述第五孔偏离30°。
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