ATE551439T1 - PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE - Google Patents

PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE

Info

Publication number
ATE551439T1
ATE551439T1 AT10401018T AT10401018T ATE551439T1 AT E551439 T1 ATE551439 T1 AT E551439T1 AT 10401018 T AT10401018 T AT 10401018T AT 10401018 T AT10401018 T AT 10401018T AT E551439 T1 ATE551439 T1 AT E551439T1
Authority
AT
Austria
Prior art keywords
parallel plate
gas distribution
thin film
film deposition
plate reactor
Prior art date
Application number
AT10401018T
Other languages
English (en)
Inventor
Joachim Mai
Benjamin Strahm
Guillaume Wahli
Arthur Buechel
Thomas Schulze
Original Assignee
Roth & Rau Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth & Rau Ag filed Critical Roth & Rau Ag
Application granted granted Critical
Publication of ATE551439T1 publication Critical patent/ATE551439T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
AT10401018T 2010-02-08 2010-02-08 PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE ATE551439T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP10401018A EP2360292B1 (de) 2010-02-08 2010-02-08 Paralleler Plattenreaktor zur gleichmäßigen Dünnfilmablagerung mit reduzierter Werkzeugaufstellfläche

Publications (1)

Publication Number Publication Date
ATE551439T1 true ATE551439T1 (de) 2012-04-15

Family

ID=42194685

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10401018T ATE551439T1 (de) 2010-02-08 2010-02-08 PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE

Country Status (10)

Country Link
US (1) US9224581B2 (de)
EP (1) EP2360292B1 (de)
JP (1) JP5810448B2 (de)
KR (1) KR101696333B1 (de)
CN (1) CN102762764B (de)
AT (1) ATE551439T1 (de)
BR (1) BR112012019479B8 (de)
MY (1) MY164472A (de)
SG (1) SG182416A1 (de)
WO (1) WO2011095846A1 (de)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2360292B1 (de) 2010-02-08 2012-03-28 Roth & Rau AG Paralleler Plattenreaktor zur gleichmäßigen Dünnfilmablagerung mit reduzierter Werkzeugaufstellfläche
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
KR20120043636A (ko) * 2010-10-26 2012-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 플라즈마 처리 장치 및 플라즈마 ｃｖｄ 장치
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
DE102012100927A1 (de) 2012-02-06 2013-08-08 Roth & Rau Ag Prozessmodul
DE102012103710A1 (de) 2012-04-27 2013-10-31 Roth & Rau Ag Modulare Durchlauf-Plasmabearbeitungsanlage
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9610591B2 (en) * 2013-01-25 2017-04-04 Applied Materials, Inc. Showerhead having a detachable gas distribution plate
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9484190B2 (en) * 2014-01-25 2016-11-01 Yuri Glukhoy Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
CN103966550B (zh) * 2014-04-17 2016-07-06 北京信息科技大学 用于薄膜沉积工艺的装置
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9384949B2 (en) * 2014-08-08 2016-07-05 Taiwan Semiconductor Manufacturing Co., Ltd Gas-flow control method for plasma apparatus
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
KR101682155B1 (ko) * 2015-04-20 2016-12-02 주식회사 유진테크 기판 처리 장치
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
JP6718730B2 (ja) * 2016-04-19 2020-07-08 株式会社ニューフレアテクノロジー シャワープレート、気相成長装置及び気相成長方法
US9997336B2 (en) * 2016-04-26 2018-06-12 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-zone gas distribution plate (GDP) and a method for designing the multi-zone GDP
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) * 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US10984987B2 (en) * 2018-10-10 2021-04-20 Lam Research Corporation Showerhead faceplate having flow apertures configured for hollow cathode discharge suppression
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11572624B2 (en) * 2018-12-13 2023-02-07 Xia Tai Xin Semiconductor (Qing Dao) Ltd. Apparatus and method for semiconductor fabrication
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11332827B2 (en) * 2019-03-27 2022-05-17 Applied Materials, Inc. Gas distribution plate with high aspect ratio holes and a high hole density
KR102315665B1 (ko) * 2019-08-19 2021-10-22 세메스 주식회사 기판 처리 장치
JP2022551152A (ja) * 2019-10-14 2022-12-07 ラム リサーチ コーポレーション 二重プレナムフラクタルシャワーヘッド
CN110565073A (zh) * 2019-10-20 2019-12-13 湖南玉丰真空科学技术有限公司 化学气相沉积镀膜设备布气装置
JP2023539064A (ja) * 2020-08-25 2023-09-13 ジュソン エンジニアリング カンパニー リミテッド 基板処理装置
US20230260759A1 (en) * 2020-10-23 2023-08-17 Lam Research Corporation Integration of vapor deposition process into plasma etch reactor
CN112371452B (zh) * 2020-11-04 2022-03-18 上海华力集成电路制造有限公司 半导体制造工艺环境的调风装置
CN114059164B (zh) * 2022-01-06 2022-11-04 芯三代半导体科技(苏州)有限公司 一种碳化硅外延生长装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6355A (ja) 1986-06-18 1988-01-05 山村硝子株式会社 ポリエチレンテレフタレート樹脂製瓶及びその製造方法
JP2541393B2 (ja) * 1991-04-10 1996-10-09 日新電機株式会社 プラズマ発生装置
JP3194017B2 (ja) * 1991-11-28 2001-07-30 東京エレクトロン株式会社 処理装置
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
JPH0930893A (ja) 1995-05-16 1997-02-04 Hitachi Electron Eng Co Ltd 気相成長装置
JP3380091B2 (ja) * 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
TW415970B (en) 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6250250B1 (en) * 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
JP2001244256A (ja) 2000-03-02 2001-09-07 Hitachi Ltd 処理装置
TW573053B (en) * 2001-09-10 2004-01-21 Anelva Corp Surface processing apparatus
JP2005536042A (ja) 2002-08-08 2005-11-24 トリコン テクノロジーズ リミティド シャワーヘッドの改良
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
JP4502639B2 (ja) * 2003-06-19 2010-07-14 財団法人国際科学振興財団 シャワープレート、プラズマ処理装置、及び、製品の製造方法
WO2005076321A1 (ja) 2004-02-03 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法
KR100790392B1 (ko) * 2004-11-12 2008-01-02 삼성전자주식회사 반도체 제조장치
KR100645184B1 (ko) 2004-11-18 2006-11-10 주식회사 엘지화학 열가소성탄성체를 이용한 탈ｐｖｃ바닥재 및 그의 제조방법
US7837825B2 (en) * 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
US7743731B2 (en) * 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
US20080302303A1 (en) * 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US8343592B2 (en) 2007-12-25 2013-01-01 Applied Materials, Inc. Asymmetrical RF drive for electrode of plasma chamber
EP2360292B1 (de) 2010-02-08 2012-03-28 Roth & Rau AG Paralleler Plattenreaktor zur gleichmäßigen Dünnfilmablagerung mit reduzierter Werkzeugaufstellfläche

Also Published As

Publication number Publication date
BR112012019479B1 (pt) 2021-02-23
WO2011095846A1 (en) 2011-08-11
EP2360292A1 (de) 2011-08-24
KR20130001235A (ko) 2013-01-03
JP2013518989A (ja) 2013-05-23
SG182416A1 (en) 2012-08-30
JP5810448B2 (ja) 2015-11-11
EP2360292A8 (de) 2012-02-29
CN102762764B (zh) 2014-07-16
US20120304933A1 (en) 2012-12-06
EP2360292B1 (de) 2012-03-28
MY164472A (en) 2017-12-15
BR112012019479B8 (pt) 2021-03-23
US9224581B2 (en) 2015-12-29
KR101696333B1 (ko) 2017-01-23
CN102762764A (zh) 2012-10-31

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