JP2013518989A - 設置面積を減少させた一様な薄膜堆積用の平行平板型反応容器 - Google Patents
設置面積を減少させた一様な薄膜堆積用の平行平板型反応容器 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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Abstract
【解決手段】 その目的は、ガス分配ユニットが、ガス分配ユニットによるガス分配とガス放出分布の独立した調整をもたらすように構成された多段のシャワーヘッドを備えている容量結合式の平行平板型プラズマ促進化学気相堆積反応容器によって達成される。
Description
effect)を得るのに必要なガス圧の低下を発生できるようなガス流伝導度を有している。そのために、第1のガス分配プレートにおける各ガス孔のガス流伝導度と全ての孔の合計ガス流伝導度が、ガス分配ユニットで適切なガス圧の低下を生じるように調整される。そのガス圧の低下は、真空技術において周知のガス制止効果が各孔で得られるように調整されるべきである。
emission profile)もそれによって変化する。この問題が、第2のガス分配プレート13によって解消される。第2のガス分配プレート13内には、ガスバッファ容積部(volume)15が形成されている。ガスバッファ容積部15の寸法は、ガスバッファ容積部15の空所によって、顕著な背圧を形成することなく、孔14から流入するガスを確実に保持可能なように調整されている。ガスバッファ容積部15は相互に密封されているため、ガスバッファ容積部15間での想定されるガス交換は起こりえない。ガスバッファ容積部15の断面積を孔14と比較し大きくすることで、ガス粒子の速度はガスバッファ容積部15内で著しく減少される。
Claims (12)
- RF電極(2、36、50、50’)に一体化されたガス分配ユニット(10)と、少なくとも1つのガス流出部(8a、8b;34;43a、43b)とを備えた容量結合式の平行平板型プラズマ促進化学気相堆積用の反応容器(1,1’)において、
前記ガス分配ユニット(10)は、ガス分配ユニット(10)によるガス分配とガス放出分布の独立した調整をもたらすように構成された多段のシャワーヘッドを備えており、
前記ガス分配ユニット(10)は、前記反応容器(1,1’)を通るガス流の方向において、少なくとも1つの穿孔された第1のガス分配プレート(12)と、前記第1のガス分配プレート(12)から離間した少なくとも1つの穿孔された第2のガス分配プレート(13、13’、23)とを備え、前記第2のガス分配プレート(13、13’、23)の孔(16、16’、27)が前記第1のガス分配プレート(12)の孔(14、19、24)よりも大きい断面積で構成されており、
前記第1のガス分配プレート(12)の各単一の孔(14、19、24)または各一群の孔(14、19、24)と前記第2のガス分配プレート(13、13’、23)との間に、相互に分離されたガスバッファ容積部(15、15’、25)が設けられ、前記ガスバッファ容積部(15、15’、25)が前記孔とそれぞれ接続しており、前記ガスバッファ容積部(15、15’、25)が前記第2のガス分配プレート(13、13’、23)の孔(16、16’、27)よりも大きい断面積で構成されていることを特徴とする反応容器。 - 前記第1のガス分配プレート(12)は、第1のガス分配プレート(12)によってガス制止効果を得るのに必要なガス圧の低下を発生可能なガス流伝導度を有することを特徴とする特許請求の範囲の請求項1に記載の反応容器。
- 前記第1のガス分配プレート(12)は、所定の孔配列を有する穿孔箔(18)を備えることを特徴とする特許請求の範囲の請求項1または請求項2の少なくとも一項に記載の反応容器。
- 前記穿孔箔(18)は別の穿孔板(17)によって固定されていることを特徴とする特許請求の範囲の請求項3に記載の反応容器。
- 前記第2のガス分配プレート(13、13’、23)の孔(16)は、ガスの流出側及び/又はガスの流入側に皿穴を備えることを特徴とする特許請求の範囲の請求項1〜請求項4の少なくとも一項に記載の反応容器。
- 前記第2のガス分配プレート(13、13’、23)の孔密度は、第2のガス分配プレート(13、13’、23)の中央領域(28)においてよりも、前記RF電極(2、36、50、50’)の側方に設けられたポンプ排気グリッド(4a、4b)にそれぞれ近い領域のエッジ(29)における方が高いことを特徴とする特許請求の範囲の請求項1〜請求項5の少なくとも一項に記載の反応容器。
- 前記ガス分配プレート(12;13、13’、23)の孔(14、16)の追加の列(30a、30b)が、前記反応容器(1,1’)の前記ガス流出部(8a、8b;34;43a、43b)に向かう方向における前記ガス分配ユニット(10)の外側エッジに設けられていることを特徴とする特許請求の範囲の請求項1〜請求項6の少なくとも一項に記載の反応容器。
- 前記反応容器(1,1’)を通るガス流の方向に延びたガスポンプ吸引流路(32;42a、42b)が、前記RF電極(2、36)のそれぞれ側方に設けられたポンプ排気グリッド(31;41a、41b)と前記反応容器(1)のガス流出部(34;43a、43b)との間に設けられていることを特徴とする特許請求の範囲の請求項1〜請求項7の少なくとも一項に記載の反応容器。
- 前記ガスポンプ吸引流路(32)は、前記反応容器(1,1’)を通るガス流の方向において前記ポンプ排気グリッド(31)の後方に設けられた複数の平行なガスデフレクタ(33)によって形成されていることを特徴とする特許請求の範囲の請求項8に記載の反応容器。
- 前記ガスポンプ吸引流路(42a、42b)は、前記反応容器(1,1’)の少なくとも1つの壁(35,35’)に内蔵されていることを特徴とする特許請求の範囲の請求項8または請求項9に記載の反応容器。
- 少なくとも1つの追加グリッド(45)が、前記RF電極(2、36,50,50’)のそれぞれ側方に設けられたポンプ排気グリッド(44)と前記反応容器(1、1’)のガス流出部との間に設けられており、前記追加グリッド(45)は前記ポンプ排気グリッド(44)と比較し低いガス流伝導度を有することを特徴とする特許請求の範囲の請求項1〜請求項10の少なくとも一項に記載の反応容器。
- 前記単一または複数のポンプ排気グリッド(46)及び/又は請求の範囲第12項に追加グリッド(45)は、各グリッド(45,46)によってガス制止効果を得るのに必要なガス圧の低下を各グリッド(45,46)が発生可能なガス流伝導度を有することを特徴とする特許請求の範囲の請求項1〜請求項11の少なくとも一項に記載の反応容器。
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EP10401018A EP2360292B1 (en) | 2010-02-08 | 2010-02-08 | Parallel plate reactor for uniform thin film deposition with reduced tool foot-print |
EP10401018.6 | 2010-02-08 | ||
PCT/IB2010/053138 WO2011095846A1 (en) | 2010-02-08 | 2010-07-09 | Parallel plate reactor for uniform thin film deposition with reduced tool foot-print |
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WO2011095846A1 (en) | 2011-08-11 |
EP2360292A1 (en) | 2011-08-24 |
BR112012019479B8 (pt) | 2021-03-23 |
EP2360292B1 (en) | 2012-03-28 |
JP5810448B2 (ja) | 2015-11-11 |
KR20130001235A (ko) | 2013-01-03 |
US20120304933A1 (en) | 2012-12-06 |
KR101696333B1 (ko) | 2017-01-23 |
SG182416A1 (en) | 2012-08-30 |
US9224581B2 (en) | 2015-12-29 |
EP2360292A8 (en) | 2012-02-29 |
CN102762764B (zh) | 2014-07-16 |
MY164472A (en) | 2017-12-15 |
BR112012019479B1 (pt) | 2021-02-23 |
ATE551439T1 (de) | 2012-04-15 |
CN102762764A (zh) | 2012-10-31 |
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