JP5222040B2 - マイクロ波プラズマ処理装置 - Google Patents
マイクロ波プラズマ処理装置 Download PDFInfo
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- JP5222040B2 JP5222040B2 JP2008166347A JP2008166347A JP5222040B2 JP 5222040 B2 JP5222040 B2 JP 5222040B2 JP 2008166347 A JP2008166347 A JP 2008166347A JP 2008166347 A JP2008166347 A JP 2008166347A JP 5222040 B2 JP5222040 B2 JP 5222040B2
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- 238000012545 processing Methods 0.000 title claims description 153
- 239000000758 substrate Substances 0.000 claims description 37
- 239000007789 gas Substances 0.000 description 132
- 239000010408 film Substances 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 150000002500 ions Chemical class 0.000 description 20
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000010494 dissociation reaction Methods 0.000 description 6
- 230000005593 dissociations Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
Description
<第1の実施形態>
図1(A),(B)は、本発明の第1の実施形態によるマイクロ波プラズマ処理装置10を示す概略構成図である。本実施形態のマイクロ波プラズマ処理装置10は、アモルファスシリコン膜や多結晶シリコン膜などのシリコン膜を基板上に堆積するプラズマ支援薄膜堆積装置である。
処理容器11は、処理容器11は、好ましくはアルミニウム(Al)で作製して良く、また、Alを含有するオーステナイトステンレス鋼で作製しても良い。このステンレス鋼で処理容器11を作製する場合には、処理容器11の内壁面に酸化処理による酸化アルミニウムよりなる保護膜を形成すると好ましい。また、処理容器11の側面には、処理容器11内へ基板を搬入出するための搬入出口(図示せず)と、搬入出口を開閉するゲートバルブ(図示せず)とが設けられている。
まず、駆動装置52により、メッシュプレート50と保持台13との距離を調整する。例えば、この距離は、処理容器11内の圧力ひいては処理容器11内のガス分子等の平均自由行程により決定して良く、定性的には、処理容器11内の圧力が比較的高い場合は短くし、比較的低い場合は長くすることができる。また、必要に応じて電源14および温調器15により保持台13を加熱する。保持台13の温度は、堆積しようとするシリコン膜の膜質に応じて適宜決定してよい。また、必要に応じて電源53によりメッシュプレート50へ電圧を印加してもよい。
<第2の実施形態>
次に、本発明の第2の実施形態によるプラズマ処理装置について説明する。このプラズマ処理装置は、第1の実施形態によるプラズマ処理装置10に比して、メッシュプレート50の温度を調整する温度調整部を有する点で相違し、他の点で同一である。以下、相違点を中心に説明する。
<第3の実施形態>
次いで、本発明の第3の実施形態によるプラズマ処理装置について説明する。
図4は、第3の実施形態によるプラズマ処理装置300を示す概略図である。図4を図1と比較すると明らかなように、第3の実施形態によるプラズマ処理装置300は、ガス供給部(シャワープレート)の構造と、ガス供給部とメッシュプレートとの位置関係の点で、第1の実施形態によるプラズマ処理装置10と相違し、他の点で同様である。以下、相違点を中心に説明する。
<第4の実施形態>
続けて、本発明の第4の実施形態によるプラズマ処理装置について説明する。
図5は、第4の実施形態によるプラズマ処理装置400を示す概略図である。図5を図4と比較すると明らかなように、第4の実施形態によるプラズマ処理装置400は、シャワープレート71とメッシュプレート50との位置関係の点で、第3の実施形態によるプラズマ処理装置300と相違し、他の点で同様である。以下、相違点を中心に説明する。
<第5の実施形態>
次に、本発明の第5の実施形態によるプラズマ処理装置について説明する。
図6は、第5の実施形態によるプラズマ処理装置500を示す概略図である。図6を図1と比較すると明らかなように、第5の実施形態によるプラズマ処理装置500は、第1の実施形態によるプラズマ処理装置10のメッシュプレート50の代わりに、メッシュドーム50Dが利用されている点で、プラズマ処理装置10と相違し、他の点で同様である。
13 保持台
14 電源
15 温調器
20 プラズマ導入部
20B ラジアルラインスロットアンテナ
21 同軸導波管
23 マッチング回路
24 マイクロ波発生装置
31,71,72 シャワープレート
31A,31B ガス通路
31AH,31BH ガス吐出孔
41 排気装置
43 圧力調整器
50 メッシュプレート
53 電源
60 ガス供給源
S 基板
Claims (1)
- 内部を減圧に維持することが可能な処理容器と、
前記処理容器内に設けられ、基板を保持する保持台と、
前記処理容器内にガスを供給するガス供給部と、
マイクロ波を発生するマイクロ波発生部と、
前記保持台と対向して配置され、前記マイクロ波発生部により発生されたマイクロ波を前記処理容器内に導入するプラズマ導入部と、
前記プラズマ導入部と前記保持台との間に配置されるメッシュ部材と、
前記メッシュ部材の温度を調整する温度調整部と、
前記メッシュ部材に電圧を印加する電源装置と、
を備え、
前記ガス供給部が第1の部材と第2の部材とを含み、
前記第1の部材が、
当該第1の部材の内部に形成される、プラズマ生成ガス用の第1のガス通路と、
前記第1のガス通路に連通し、第1の方向に開口する複数の第1のガス吐出孔と、
を含み、
前記第2の部材が、
当該第2の部材の内部に形成される、処理ガス用の第2のガス通路と、
前記第2のガス通路に連通し、前記第1の方向と異なる第2の方向に開口する複数の第2のガス吐出孔と、
を含み、
前記プラズマ導入部と前記保持台との間において、前記第1の部材、前記メッシュ部材、および前記第2の部材が、前記マイクロ波導入部から前記保持台へ向かう方向に沿って記載の順に配置される、マイクロ波プラズマ処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008166347A JP5222040B2 (ja) | 2008-06-25 | 2008-06-25 | マイクロ波プラズマ処理装置 |
US12/487,719 US20090320756A1 (en) | 2008-06-25 | 2009-06-19 | Microwave plasma processing apparatus |
KR1020090055884A KR20100002139A (ko) | 2008-06-25 | 2009-06-23 | 마이크로파 플라즈마 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008166347A JP5222040B2 (ja) | 2008-06-25 | 2008-06-25 | マイクロ波プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010010297A JP2010010297A (ja) | 2010-01-14 |
JP5222040B2 true JP5222040B2 (ja) | 2013-06-26 |
Family
ID=41445912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008166347A Expired - Fee Related JP5222040B2 (ja) | 2008-06-25 | 2008-06-25 | マイクロ波プラズマ処理装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090320756A1 (ja) |
JP (1) | JP5222040B2 (ja) |
KR (1) | KR20100002139A (ja) |
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KR101046902B1 (ko) * | 2005-11-08 | 2011-07-06 | 도쿄엘렉트론가부시키가이샤 | 샤워 플레이트 및 샤워 플레이트를 사용한 플라즈마 처리장치 |
JP5005999B2 (ja) * | 2006-09-29 | 2012-08-22 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置の使用方法 |
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