JP5253511B2 - ワークピース製造方法及び装置 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims description 257
- 238000012545 processing Methods 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Description
前記真空プロセスのそれぞれに対して、真空プロセスステーションを提供する工程と、
前記真空プロセスステーションを、それぞれ第一真空処理プロセスを行うこのステーションの少なくとも第一グループと、それぞれ第二真空処理プロセスを行うこのプロセスステーションの第二グループとに分類する工程と、
を備える。
第一グループの第一真空プロセスステーションと、
第二グループの第二真空プロセスステーションと、
を備える。
前記第一プロセスステーションは、前記第一プロセスステーションのそれぞれのあるものから前記第一プロセスステーションの次のものへワークピースを同時に搬送するように設計されている第一ワークピース搬送装置により供給されている。
前記第二プロセスステーションは、ワークピースを個々に、前記第二プロセスステーションのうちの選択されたものへ及び前記第二プロセスステーションのうちの選択されたものから、搬送するように設計されている第二ワークピース搬送装置により供給されている。
32 第二真空搬送チャンバ
51 第一搬送装置
52 第二搬送装置
71 搬送アーム
72 搬送アーム
9 ワークピースサポート
92 ワークピースサポート
I 第一グループ
II 第二グループ
P11〜P1n 第一プロセスステーション
P21〜P2m 第二プロセスステーション
Claims (20)
- 真空プロセスのそれぞれに対して、真空プロセスステーションを提供する工程と、
前記真空プロセスステーションを、第一真空処理プロセスをそれぞれ行う少なくとも第一グループの真空プロセスステーションと、第二真空処理プロセスをそれぞれ行う第二グループの第二真空プロセスステーションとに分類する工程と、
を備え、
前記第一グループの真空プロセスはそれぞれ第一プロセスタイムスパンを有し、
前記第二グループの真空プロセスはそれぞれ第二プロセスタイムスパンを有し、
前記第一プロセスのタイムスパンは、前記第二プロセスのタイムスパンよりも短く、
前記第一真空プロセスのそれぞれにより各ワークピースを連続して処理し、かつその結果、ワークピースを同時に、ある前記第一プロセスステーションから次の前記第一プロセスステーションに搬送する工程と、
前記第二真空プロセスによりワークピースを処理し、かつその結果、ワークピースを個々に、選択された第二プロセスステーションへ及び選択された第二プロセスステーションから搬送する工程と、
を備え、ワークピースのそれぞれが複数の真空処理プロセスにより処理されることを特徴とするワークピース製造方法。 - 前記第二真空プロセスによりワークピースを処理する工程は、前記第二真空処理プロセスのうちの等しいものにより、ワークピースを同時に処理する工程を備えていることを特徴とする請求項1に記載の方法。
- 真空下で、前記ワークピースを、前記第一グループのプロセスステーションから前記第二グループのプロセスステーションへ、又は前記第二グループのプロセスステーションから前記第一グループのプロセスステーションへ、搬送する搬送する工程を、さらに備えていることを特徴とする請求項1又は2に記載の方法。
- 従って少なくとも一つの前記第二プロセスタイムスパンと等しくなる前記第一プロセスタイムスパンの総和を選択することを特徴とする請求項1〜3のいずれか一項に記載の方法。
- 前記ワークピースは基板であることを特徴とする請求項1〜4のいずれか一項に記載の方法。
- 前記ワークピースは半導体又はストレージデバイスウエハであることを特徴とする請求項1〜5のいずれか一項に記載の方法。
- 前記ワークピースは、光起電アプリケーション製造用の基板である請求項1〜5のいずれか一項に記載の方法。
- 前記光起電アプリケーションは太陽電池パネルである請求項7に記載の方法。
- 第一グループの真空プロセスステーションと、
第二グループの真空プロセスステーションと、
を備え、
前記第一プロセスステーションは、前記第一プロセスステーションの各第一プロセスステーションから前記第一プロセスステーションの次の第一プロセスステーションへ、ワークピースを同時に搬送するように設計されている第一ワークピース搬送装置により、供給されており、
前記第二プロセスステーションは、前記第二プロセスステーションのうち、選択された第二プロセスステーションへ及び選択された第二プロセスステーションから、ワークピースを個々に搬送するように設計されている第二ワークピース搬送装置により、供給されていることを特徴とする真空処理装置。 - 前記第一プロセスステーションは、前記第一ワークピース搬送装置を構成している第一中央真空搬送ステーションの周りに、環状に群をなしていることを特徴とする請求項9に記載の装置。
- 前記第二プロセスステーションは、前記第二ワークピース搬送装置を構成している第二真空搬送チャンバの周りに、環状に群をなしていることを特徴とする請求項9又は10に記載の装置。
- 前記第一グループのプロセスステーションから前記第二グループの真空プロセスステーションへワークピースを搬送するように設計されている追加の搬送装置を、さらに備えていることを特徴とする請求項9〜11のいずれか一項に記載の装置。
- 前記追加の搬送装置は、真空下で動作していることを特徴とする請求項12に記載の装置。
- 前記追加の搬送装置は、少なくとも一つの前記第一及び第二ワークピース搬送装置により実現されていることを特徴とする請求項13に記載の装置。
- 少なくとも二つの前記第二真空プロセスステーションは、同じものである請求項9〜14のいずれか一項に記載の装置。
- 前記第一プロセスステーションは、それぞれの第一プロセスタイムスパンを有する第一真空プロセスを行うように設計されており、
前記第二プロセスステーションは、それぞれの第二プロセスタイムスパンを有する第二真空プロセスを行うように設計されており、
前記第一プロセスのタイムスパンは、前記第二プロセスタイムのスパンより短いことを特徴とする請求項9〜15のいずれか一項に記載の装置。 - 前記第一プロセスのタイムスパンの総和は、少なくとも一つの前記第二プロセスのタイムスパンと等しいことを特徴とする請求項16に記載の装置。
- 前記ワークピースは、ウエハであることを特徴とする請求項9〜17のいずれか一項に記載の装置。
- 前記ウエハは、半導体デバイス、ストレージデバイス、又は光起電デバイス製造用のウエハであることを特徴とする請求項18に記載の装置。
- 前記ワークピースは、太陽電池パネル用の基板であることを特徴とする請求項9〜17のいずれか一項に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98225607P | 2007-10-24 | 2007-10-24 | |
US60/982,256 | 2007-10-24 | ||
PCT/EP2008/064373 WO2009053435A1 (en) | 2007-10-24 | 2008-10-23 | Method for manufacturing workpieces and apparatus |
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JP2011501453A JP2011501453A (ja) | 2011-01-06 |
JP5253511B2 true JP5253511B2 (ja) | 2013-07-31 |
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JP2010530458A Active JP5253511B2 (ja) | 2007-10-24 | 2008-10-23 | ワークピース製造方法及び装置 |
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US (2) | US8834969B2 (ja) |
EP (1) | EP2207909B1 (ja) |
JP (1) | JP5253511B2 (ja) |
KR (1) | KR20100086490A (ja) |
CN (1) | CN101835922B (ja) |
AU (1) | AU2008316467A1 (ja) |
CA (1) | CA2701402A1 (ja) |
WO (1) | WO2009053435A1 (ja) |
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TWI485799B (zh) * | 2009-12-10 | 2015-05-21 | Orbotech Lt Solar Llc | 自動排序之直線型處理裝置 |
WO2012089732A1 (en) * | 2010-12-29 | 2012-07-05 | Oc Oerlikon Balzers Ag | Vacuum treatment apparatus and a method for manufacturing |
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US20140345518A1 (en) | 2014-11-27 |
WO2009053435A1 (en) | 2009-04-30 |
CN101835922A (zh) | 2010-09-15 |
US20090106968A1 (en) | 2009-04-30 |
US10347515B2 (en) | 2019-07-09 |
AU2008316467A1 (en) | 2009-04-30 |
KR20100086490A (ko) | 2010-07-30 |
EP2207909A1 (en) | 2010-07-21 |
US8834969B2 (en) | 2014-09-16 |
EP2207909B1 (en) | 2012-08-29 |
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JP2011501453A (ja) | 2011-01-06 |
CA2701402A1 (en) | 2009-04-30 |
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