CN101835922A - 用于制造工件的方法和装置 - Google Patents
用于制造工件的方法和装置 Download PDFInfo
- Publication number
- CN101835922A CN101835922A CN200880113819A CN200880113819A CN101835922A CN 101835922 A CN101835922 A CN 101835922A CN 200880113819 A CN200880113819 A CN 200880113819A CN 200880113819 A CN200880113819 A CN 200880113819A CN 101835922 A CN101835922 A CN 101835922A
- Authority
- CN
- China
- Prior art keywords
- processing stations
- workpiece
- vacuum
- group
- handling equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 102
- 238000004519 manufacturing process Methods 0.000 title description 8
- 238000012545 processing Methods 0.000 claims abstract description 207
- 238000009489 vacuum treatment Methods 0.000 claims abstract description 6
- 230000008569 process Effects 0.000 claims description 58
- 238000005516 engineering process Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 24
- 238000009434 installation Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98225607P | 2007-10-24 | 2007-10-24 | |
US60/982,256 | 2007-10-24 | ||
PCT/EP2008/064373 WO2009053435A1 (en) | 2007-10-24 | 2008-10-23 | Method for manufacturing workpieces and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101835922A true CN101835922A (zh) | 2010-09-15 |
CN101835922B CN101835922B (zh) | 2012-05-02 |
Family
ID=40099579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801138191A Active CN101835922B (zh) | 2007-10-24 | 2008-10-23 | 用于制造工件的方法和装置 |
Country Status (8)
Country | Link |
---|---|
US (2) | US8834969B2 (zh) |
EP (1) | EP2207909B1 (zh) |
JP (1) | JP5253511B2 (zh) |
KR (1) | KR20100086490A (zh) |
CN (1) | CN101835922B (zh) |
AU (1) | AU2008316467A1 (zh) |
CA (1) | CA2701402A1 (zh) |
WO (1) | WO2009053435A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103299413A (zh) * | 2010-12-29 | 2013-09-11 | Oc欧瑞康巴尔斯公司 | 真空处理设备和制造方法 |
US11574826B2 (en) | 2019-07-12 | 2023-02-07 | Applied Materials, Inc. | High-density substrate processing systems and methods |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5253511B2 (ja) * | 2007-10-24 | 2013-07-31 | オーツェー・エリコン・バルザース・アーゲー | ワークピース製造方法及び装置 |
TWI485799B (zh) * | 2009-12-10 | 2015-05-21 | Orbotech Lt Solar Llc | 自動排序之直線型處理裝置 |
US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
US20200203071A1 (en) * | 2017-04-27 | 2020-06-25 | Evatec Ag | Soft magnetic multilayer desposition apparatus, methods of manufacturing and magnetic multilayer |
US11380520B2 (en) * | 2017-11-17 | 2022-07-05 | Evatec Ag | RF power delivery to vacuum plasma processing |
US10998209B2 (en) | 2019-05-31 | 2021-05-04 | Applied Materials, Inc. | Substrate processing platforms including multiple processing chambers |
US11117265B2 (en) | 2019-07-12 | 2021-09-14 | Applied Materials, Inc. | Robot for simultaneous substrate transfer |
CN114072897A (zh) | 2019-07-12 | 2022-02-18 | 应用材料公司 | 用于同时基板传输的机械手 |
US12080571B2 (en) | 2020-07-08 | 2024-09-03 | Applied Materials, Inc. | Substrate processing module and method of moving a workpiece |
US11817331B2 (en) | 2020-07-27 | 2023-11-14 | Applied Materials, Inc. | Substrate holder replacement with protective disk during pasting process |
US11749542B2 (en) | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
US11600507B2 (en) | 2020-09-09 | 2023-03-07 | Applied Materials, Inc. | Pedestal assembly for a substrate processing chamber |
US11610799B2 (en) | 2020-09-18 | 2023-03-21 | Applied Materials, Inc. | Electrostatic chuck having a heating and chucking capabilities |
US11674227B2 (en) | 2021-02-03 | 2023-06-13 | Applied Materials, Inc. | Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure |
US12002668B2 (en) | 2021-06-25 | 2024-06-04 | Applied Materials, Inc. | Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool |
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2008
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- 2008-10-23 AU AU2008316467A patent/AU2008316467A1/en not_active Abandoned
- 2008-10-23 KR KR1020107011193A patent/KR20100086490A/ko active Search and Examination
- 2008-10-23 EP EP08840827A patent/EP2207909B1/en active Active
- 2008-10-23 US US12/256,543 patent/US8834969B2/en active Active
- 2008-10-23 CA CA2701402A patent/CA2701402A1/en not_active Abandoned
- 2008-10-23 CN CN2008801138191A patent/CN101835922B/zh active Active
- 2008-10-23 WO PCT/EP2008/064373 patent/WO2009053435A1/en active Application Filing
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2014
- 2014-08-06 US US14/452,883 patent/US10347515B2/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103299413A (zh) * | 2010-12-29 | 2013-09-11 | Oc欧瑞康巴尔斯公司 | 真空处理设备和制造方法 |
CN103299413B (zh) * | 2010-12-29 | 2016-12-14 | 欧瑞康先进科技股份公司 | 真空处理设备和制造方法 |
US11574826B2 (en) | 2019-07-12 | 2023-02-07 | Applied Materials, Inc. | High-density substrate processing systems and methods |
TWI794620B (zh) * | 2019-07-12 | 2023-03-01 | 美商應用材料股份有限公司 | 高密度基板處理系統及方法 |
US12074042B2 (en) | 2019-07-12 | 2024-08-27 | Applied Materials, Inc. | High-density substrate processing systems and methods |
Also Published As
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US20140345518A1 (en) | 2014-11-27 |
WO2009053435A1 (en) | 2009-04-30 |
US20090106968A1 (en) | 2009-04-30 |
JP5253511B2 (ja) | 2013-07-31 |
US10347515B2 (en) | 2019-07-09 |
AU2008316467A1 (en) | 2009-04-30 |
KR20100086490A (ko) | 2010-07-30 |
EP2207909A1 (en) | 2010-07-21 |
US8834969B2 (en) | 2014-09-16 |
EP2207909B1 (en) | 2012-08-29 |
CN101835922B (zh) | 2012-05-02 |
JP2011501453A (ja) | 2011-01-06 |
CA2701402A1 (en) | 2009-04-30 |
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