JP5562189B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP5562189B2 JP5562189B2 JP2010212490A JP2010212490A JP5562189B2 JP 5562189 B2 JP5562189 B2 JP 5562189B2 JP 2010212490 A JP2010212490 A JP 2010212490A JP 2010212490 A JP2010212490 A JP 2010212490A JP 5562189 B2 JP5562189 B2 JP 5562189B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- unit
- substrate
- pressure
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 106
- 238000012545 processing Methods 0.000 title claims description 60
- 238000012546 transfer Methods 0.000 claims description 178
- 238000004140 cleaning Methods 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 14
- 230000007723 transport mechanism Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 111
- 238000000034 method Methods 0.000 description 27
- 239000007789 gas Substances 0.000 description 23
- 230000008569 process Effects 0.000 description 14
- 239000000112 cooling gas Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000013519 translation Methods 0.000 description 6
- 230000000717 retained effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
以下、実施の形態を図面を参照して具体的に説明する。本願に係る基板処理装置は、シリコンウェーハ、ガラス基板又はプラスチック基板等の基板に対して、例えば真空状態下又は雰囲気状態下で薄膜形成等の処理を施す。基板処理装置は、搬送室と、搬送室の周囲に連結された複数のチャンバ(気密容器)とを有するクラスタを備える。搬送室内の基板は、各チャンバに搬送されて各チャンバ内で各種処理が施される。また、搬送室に連結されたチャンバは、内部で基板を処理するチャンバに限るものではなく、基板を真空状態下で検査するために、例えば電子顕微鏡及び各種分光器等の試料室として設けられたチャンバであってもよい。基板処理装置は、一つ又は直列に連結された複数のクラスタを有する。本実施の形態では、直列に連結された2つのクラスタを有するタンデム型の基板処理装置を例に挙げて説明する。また、基板としてウェーハを例に挙げる。
実施の形態2は、実施の形態1の搬出室がロードロック機能を有するのに対して、更に加熱機能、冷却機能及び洗浄機能を有する。図8は、搬出室の他の例を示す模式的側面図である。図中白抜矢印は、ウェーハWの移動方向を示す。搬出室7は、加熱部74と、冷却ガスを供給する冷却ガス供給部(冷却部)75と、洗浄ガスを供給する洗浄ガス供給部76と、洗浄ガスを回収する洗浄ガス回収部77とを含む。洗浄ガス供給部76は、搬出室6の内部に突出する吐出管(洗浄部)T76にバルブV76を介して連結されている。
実施の形態3は搬出室6が圧力調整室と大気圧状態にある補助搬出室との2つを含む形態に関する。図10は実施の形態3に係る基板処理装置の例を示す模式的上面図である。搬出室6は真空状態から大気圧状態へ、または、大気圧状態から真空状態へ圧力を調整する圧力調整室6V、及び、大気圧状態下で圧力調整室6Vから搬出されたウェーハWを格納部1へ搬出する補助搬出室6Aを含む。圧力調整室6VはゲートバルブG6及びゲートバルブG7の他、圧力調整部としての排気部61、バルブV61、及び、開放部62を備える。圧力調整室6Vは第2開口部60及びゲートバルブG6を介して搬送室51に連結されている。
2、200 大気搬送部
3、300 ロードロック室(搬入部)
4、400 第1クラスタ
5、500 第2クラスタ
6、7 搬出室
6V 圧力調整室
6A 補助搬出室
W、W0 ウェーハ(基板)
31、61、301 排気部(圧力調整部)
32、62、302 開放部(圧力調整部)
V31、V61、V75〜V77、V301 バルブ
41、51、401、501 搬送室
41a、401a 中継部
A2 搬送アーム(搬入部)
A41、A51、A401、A501 搬送アーム
A6 搬送アーム(搬出部)
42、43、52、53、402、403、503、503 チャンバ(気密容器)
60 第2開口部
63 平行移動部(搬出部)
74 加熱部
75 冷却ガス供給部(冷却部)
76 洗浄ガス供給部
77 洗浄ガス回収部
410 第1開口部
T76 吐出管(洗浄部)
T77 吸入管
G2、G3、G7、G41〜G43、G51〜G53、G6 ゲートバルブ
X2 水平移動部
X6 水平移動部(搬出部)
Z2 上下移動部
Z6 上下移動部(搬出部)
Claims (6)
- 基板を格納する格納部と、
基板を気密状態下で処理する複数の気密容器が周囲に連結され、各気密容器との間で基板を搬送する搬送機構を内部に有し、且つ相互間で基板を搬送可能とする中継部を介して水平方向に沿って直列に連結された複数の搬送室と、
前記格納部内の基板を前記搬送室へ搬入する搬入部と、
前記搬送室から排出された基板を前記格納部へ搬出する搬出部を内部に有する搬出室とを備え、
一端側に配置した搬送室は、前記搬入部を介して前記格納部に連結され、
他端側に配置した搬送室は、前記搬出室を介して前記格納部に連結され、
前記搬出部は、前記搬出室内の基板を上側又は下側へ移動させる上下移動部と、該上下移動部により移動された基板を、前記搬送室の上側又は下側で、前記搬送室の連結方向と平行に前記格納部へ移動する平行移動部とを有することを特徴とする基板処理装置。 - 前記搬出室は、内部の圧力を調整する圧力調整部を備え、
前記搬出部は、前記圧力調整部により内部の圧力を前記搬送室の圧力に一致させた搬出室へ基板を搬入し、前記圧力調整部により内部の圧力を前記格納部の圧力に一致させた搬出室から基板を搬出するようにしてある
ことを特徴とする請求項1に記載の基板処理装置。 - 前記搬出室と前記搬送室との間に設けられる圧力調整室と、
前記搬送室から前記圧力調整室へ基板が排出される前に前記圧力調整室の圧力を真空状態へ調整し、前記基板が前記圧力調整室から前記搬出室へ搬出される前に前記圧力調整室の圧力を大気圧状態へ調整する圧力調整部と
を備えることを特徴とする請求項1に記載の基板処理装置。 - 前記搬出室は、基板を加熱する加熱部を備えることを特徴とする請求項1から請求項3までのいずれか一つに記載の基板処理装置。
- 前記搬出室は、基板を冷却する冷却部を備えることを特徴とする請求項1から請求項4までのいずれか一つに記載の基板処理装置。
- 前記搬出室は、基板を洗浄する洗浄部を備えることを特徴とする請求項1から請求項5までのいずれか一つに記載の基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010212490A JP5562189B2 (ja) | 2010-09-22 | 2010-09-22 | 基板処理装置 |
TW100133907A TWI557826B (zh) | 2010-09-22 | 2011-09-21 | Substrate processing device |
KR1020137007123A KR20130113437A (ko) | 2010-09-22 | 2011-09-21 | 기판 처리 장치 |
US13/824,637 US9230842B2 (en) | 2010-09-22 | 2011-09-21 | Substrate processing apparatus |
PCT/JP2011/071495 WO2012039426A1 (ja) | 2010-09-22 | 2011-09-21 | 基板処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010212490A JP5562189B2 (ja) | 2010-09-22 | 2010-09-22 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012069682A JP2012069682A (ja) | 2012-04-05 |
JP5562189B2 true JP5562189B2 (ja) | 2014-07-30 |
Family
ID=45873910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010212490A Active JP5562189B2 (ja) | 2010-09-22 | 2010-09-22 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9230842B2 (ja) |
JP (1) | JP5562189B2 (ja) |
KR (1) | KR20130113437A (ja) |
TW (1) | TWI557826B (ja) |
WO (1) | WO2012039426A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5253511B2 (ja) * | 2007-10-24 | 2013-07-31 | オーツェー・エリコン・バルザース・アーゲー | ワークピース製造方法及び装置 |
JP5883232B2 (ja) * | 2011-03-26 | 2016-03-09 | 東京エレクトロン株式会社 | 基板処理装置 |
WO2014025918A1 (en) * | 2012-08-08 | 2014-02-13 | Applied Materials, Inc | Linked vacuum processing tools and methods of using the same |
JP2014093489A (ja) * | 2012-11-06 | 2014-05-19 | Tokyo Electron Ltd | 基板処理装置 |
US9281221B2 (en) * | 2012-11-16 | 2016-03-08 | Taiwan Semiconductor Manufacturing Company Limited | Ultra-high vacuum (UHV) wafer processing |
KR102414340B1 (ko) * | 2017-09-08 | 2022-06-29 | 에이씨엠 리서치 (상하이) 인코포레이티드 | 반도체 웨이퍼를 세정하기 위한 방법 및 장치 |
JP7115879B2 (ja) * | 2018-03-23 | 2022-08-09 | 株式会社日立ハイテク | 真空処理装置の運転方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10144765A (ja) * | 1996-11-11 | 1998-05-29 | Canon Sales Co Inc | 基板処理システム |
US6168667B1 (en) * | 1997-05-30 | 2001-01-02 | Tokyo Electron Limited | Resist-processing apparatus |
JP2003059999A (ja) | 2001-08-14 | 2003-02-28 | Tokyo Electron Ltd | 処理システム |
JP2004349503A (ja) * | 2003-05-22 | 2004-12-09 | Tokyo Electron Ltd | 被処理体の処理システム及び処理方法 |
JP4376072B2 (ja) * | 2004-01-16 | 2009-12-02 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP4619854B2 (ja) | 2005-04-18 | 2011-01-26 | 東京エレクトロン株式会社 | ロードロック装置及び処理方法 |
JP4925650B2 (ja) | 2005-11-28 | 2012-05-09 | 東京エレクトロン株式会社 | 基板処理装置 |
KR20130004830A (ko) * | 2011-07-04 | 2013-01-14 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
-
2010
- 2010-09-22 JP JP2010212490A patent/JP5562189B2/ja active Active
-
2011
- 2011-09-21 TW TW100133907A patent/TWI557826B/zh active
- 2011-09-21 WO PCT/JP2011/071495 patent/WO2012039426A1/ja active Application Filing
- 2011-09-21 KR KR1020137007123A patent/KR20130113437A/ko not_active Application Discontinuation
- 2011-09-21 US US13/824,637 patent/US9230842B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2012039426A1 (ja) | 2012-03-29 |
KR20130113437A (ko) | 2013-10-15 |
TW201227859A (en) | 2012-07-01 |
US20130309045A1 (en) | 2013-11-21 |
TWI557826B (zh) | 2016-11-11 |
US9230842B2 (en) | 2016-01-05 |
JP2012069682A (ja) | 2012-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5562189B2 (ja) | 基板処理装置 | |
CN108431941B (zh) | 半导体系统中的湿度控制 | |
TWI544168B (zh) | A gate valve device, a substrate processing device, and a substrate processing method | |
JP4642619B2 (ja) | 基板処理システム及び方法 | |
US6696367B1 (en) | System for the improved handling of wafers within a process tool | |
JP4516966B2 (ja) | 半導体製造装置、基板の装填脱装方法および半導体装置の製造方法 | |
TWI532114B (zh) | Vacuum processing device and operation method of vacuum processing device | |
US20180114710A1 (en) | Equipment front end module and semiconductor manufacturing apparatus including the same | |
CN109560021B (zh) | 基板处理装置、基板处理方法以及计算机存储介质 | |
JPH05218176A (ja) | 熱処理方法及び被処理体の移載方法 | |
US7371683B2 (en) | Method for carrying object to be processed | |
JP4961894B2 (ja) | 基板処理装置、基板処理方法及び記憶媒体 | |
KR102274732B1 (ko) | 기판 반송 장치 | |
JP2015115517A (ja) | 基板搬送装置及びefem | |
JP2008251631A (ja) | 真空処理装置、真空処理装置の運転方法及び記憶媒体 | |
TW201123340A (en) | Vacuum processing system and vacuum processing method of semiconductor processing substrate | |
JP4983745B2 (ja) | 圧力調整装置、これを用いた処理システム及び圧力調整方法 | |
JPWO2009060539A1 (ja) | インライン型ウェハ搬送装置および基板搬送方法 | |
JP2009267012A (ja) | 真空処理装置及び真空処理方法 | |
KR102125122B1 (ko) | 기판 처리 장치 | |
JP2018170347A (ja) | ウェハー搬送装置及びウェハー搬送方法 | |
KR20140118718A (ko) | 진공 처리 장치 및 진공 처리 장치의 운전 방법 | |
TW201925063A (zh) | 模組加壓工作站及利用其處理半導體之方法 | |
JP7445509B2 (ja) | 基板処理装置及び基板搬送方法 | |
KR101929872B1 (ko) | 기판 처리 장치 및 기판 처리 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130614 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140311 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140428 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140520 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140610 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5562189 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |