JP7115879B2 - 真空処理装置の運転方法 - Google Patents
真空処理装置の運転方法 Download PDFInfo
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- JP7115879B2 JP7115879B2 JP2018055589A JP2018055589A JP7115879B2 JP 7115879 B2 JP7115879 B2 JP 7115879B2 JP 2018055589 A JP2018055589 A JP 2018055589A JP 2018055589 A JP2018055589 A JP 2018055589A JP 7115879 B2 JP7115879 B2 JP 7115879B2
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- vacuum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
Description
101…大気側ブロック、
102…真空側ブロック、
103…真空処理室、
104…第1の真空搬送室、
105…ロック室、
106…筐体、
107…カセット台、
108…真空搬送ロボット、
109…大気搬送ロボット、
110…第2の真空搬送室、
111…第1の真空搬送中間室、
112…第3の真空搬送室、
113…第2の真空搬送中間室、
120…ゲートバルブ、
121…ドライポンプ、
122…排気配管、
123…パージライン、
124…ガス導入口、
125…排気口、
126…ウエハ。
Claims (6)
- 減圧された内部に処理対象のウエハが搬送される搬送室を備えて前後方向に並べて配置された2つの真空搬送容器と、これらの真空搬送容器の間に連結されて配置され各々の真空搬送室同士と連通される中間室を内部に備えた中間室容器と、前記2つの真空搬送容器の各々に連結され内部に前記ウエハが搬送されてプラズマを用いて処理される処理室を備えた複数の真空処理容器とを備え、前記複数の真空処理容器の各々に前記ウエハを搬送して処理する真空処理装置の運転方法であって、
前記真空搬送容器の各々は、各々の真空搬送室の内部に、前記ウエハを搬送する搬送ロボットと、前後方向について前記搬送ロボットの後方の当該真空搬送室の内壁に開口を有してこの真空搬送室の中心側に向けてガスを供給する少なくとも1つの供給口及び前記搬送ロボットの前方の当該真空搬送室の内壁に開口を有し前記ガスを排気する少なくとも1つの排気口であって前記中間室の中心を通る前後の軸方向について左右の何れかの側に各々が配置されたガスの供給口及び排気口とを備え、
前記2つの真空搬送容器の前記供給口及び排気口のうち前後方向について前記搬送ロボットの間に配置された供給口及び排気口の対の間でガスを供給し前記中間室を通して排気する第1の運転と、前記2つ搬送ロボットの動作が停止している間に前記2つの真空搬送容器の前記供給口及び排気口のうち前後方向について前記搬送ロボットを間に挟んだ前記供給口及び排気口の対の間でガスを供給し前記中間室を通して排気する第2の運転とを繰り返す真空処理装置の運転方法。 - 減圧された内部に処理対象のウエハが搬送される搬送室を備えて前後方向に並べて配置された2つの真空搬送容器と、これらの真空搬送容器の間に連結されて配置され各々の真空搬送室同士と連通される中間室を内部に備えた中間室容器と、前記2つの真空搬送容器の各々に連結され内部に前記ウエハが搬送されてプラズマを用いて処理される処理室を備えた複数の真空処理容器とを備え、前記複数の真空処理容器の各々に前記ウエハを搬送して処理する真空処理装置の運転方法であって、
前記真空搬送容器のうち、前方の真空搬送容器の真空搬送室の内部に、前記ウエハを搬送する第1の搬送ロボットと、前後方向について前記第1の搬送ロボットの後方の当該真空搬送室の内壁に開口を有してこの真空搬送室の中心側に向けてガスを供給する第1の供給口及び前記第1の搬送ロボットの前方の当該真空搬送室の内壁に開口を有し前記ガスを排気する少なくとも1つの第1の排気口であって前記中間室の中心を通る前後の軸方向について左右の何れかの側に各々が配置されたガスの第1の供給口及び排気口と備え、
前記真空搬送容器のうち、後方の真空搬送容器の真空搬送室の内部に、前記ウエハを搬送する第2の搬送ロボットと、前後方向について前記第2の搬送ロボットの後方の当該真空搬送室の内壁に開口を有してこの真空搬送室の中心側に向けてガスを供給する第2の供給口及び前記第2の搬送ロボットの前方の当該真空搬送室の内壁に開口を有し前記ガスを排気する少なくとも1つの第2の排気口であって前記中間室の中心を通る前後の軸方向について左右の何れかの側に各々が配置されたガスの第2の供給口及び排気口と備え、
前記第1の供給口及び第2の排気口の対の間でガスを供給し前記中間室を通して排気する第1の運転と、前記第1及び第2の搬送ロボットの動作が停止している間に前記第2の供給口及び第1の排気口の対の間でガスを供給し当該第1及び第2の搬送ロボットを間に挟んで前記中間室を通して排気する第2の運転とを繰り返す真空処理装置の運転方法。 - 請求項1に記載の真空処理装置の運転方法であって、
前記2つの真空搬送容器各々が、前記供給口及び排気口を上方から見て各々の前記搬送ロボットを挟んだ各々の真空搬送室の対角の角部に配置された真空処理装置の運転方法。 - 請求項2に記載の真空処理装置の運転方法であって、
前記2つの真空搬送容器各々が、前記第1の供給口及び排気口と前記第2の供給口及び排気口とを上方から見て前記第1および第2の搬送ロボットを間に挟んだ各々の前記真空搬送室の対角の角部に備えた真空処理装置の運転方法。 - 請求項1乃至4の何れかに記載の真空処理装置の運転方法であって、
前記第1及び第2の運転において前記2つの真空搬送室各々と連結された前記真空処理容器との間が気密に封止され当該2つの真空搬送室及び前記中間室が連結された1つの室として区画される真空処理装置の運転方法。 - 請求項1乃至4の何れかに記載の真空処理装置の運転方法であって、
前記第2の運転が、前記真空処理容器の内部のメンテナンス中に実施される真空処理装置の運転方法。
Priority Applications (5)
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JP2018055589A JP7115879B2 (ja) | 2018-03-23 | 2018-03-23 | 真空処理装置の運転方法 |
KR1020190008008A KR102131664B1 (ko) | 2018-03-23 | 2019-01-22 | 진공 처리 장치의 운전 방법 |
TW108107589A TWI695448B (zh) | 2018-03-23 | 2019-03-07 | 真空處理裝置的運轉方法 |
US16/362,002 US11195733B2 (en) | 2018-03-23 | 2019-03-22 | Operation method of vacuum processing device |
US17/507,932 US20220051917A1 (en) | 2018-03-23 | 2021-10-22 | Operation method of vacuum processing device |
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JP2018055589A JP7115879B2 (ja) | 2018-03-23 | 2018-03-23 | 真空処理装置の運転方法 |
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JP2019169583A JP2019169583A (ja) | 2019-10-03 |
JP7115879B2 true JP7115879B2 (ja) | 2022-08-09 |
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TW202215562A (zh) * | 2020-09-17 | 2022-04-16 | 日商東京威力科創股份有限公司 | 基板處理裝置、吹淨氣體之控制方法及真空搬運室之清洗方法 |
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JP2014179431A (ja) | 2013-03-14 | 2014-09-25 | Hitachi High-Technologies Corp | 真空処理装置及びその運転方法 |
JP2017228626A (ja) | 2016-06-22 | 2017-12-28 | 株式会社日立ハイテクノロジーズ | 真空処理装置およびその運転方法 |
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JPH0794489A (ja) * | 1993-09-20 | 1995-04-07 | Tokyo Electron Ltd | 処理装置のクリーニング方法 |
JP2003045947A (ja) | 2001-07-27 | 2003-02-14 | Canon Inc | 基板処理装置及び露光装置 |
EP1506570A1 (en) | 2002-05-21 | 2005-02-16 | ASM America, Inc. | Reduced cross-contamination between chambers in a semiconductor processing tool |
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JP4825689B2 (ja) | 2007-01-12 | 2011-11-30 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP2009123723A (ja) | 2007-11-12 | 2009-06-04 | Hitachi High-Technologies Corp | 真空処理装置または真空処理方法 |
JP5295808B2 (ja) | 2009-02-09 | 2013-09-18 | 東京エレクトロン株式会社 | パーティクル付着防止方法及び被処理基板の搬送方法 |
TW201123340A (en) | 2009-11-12 | 2011-07-01 | Hitachi High Tech Corp | Vacuum processing system and vacuum processing method of semiconductor processing substrate |
JP2012028659A (ja) | 2010-07-27 | 2012-02-09 | Hitachi High-Technologies Corp | 真空処理装置 |
JP5562189B2 (ja) * | 2010-09-22 | 2014-07-30 | 東京エレクトロン株式会社 | 基板処理装置 |
JP5710194B2 (ja) | 2010-09-28 | 2015-04-30 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP5785712B2 (ja) | 2010-12-28 | 2015-09-30 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
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JP2014179431A (ja) | 2013-03-14 | 2014-09-25 | Hitachi High-Technologies Corp | 真空処理装置及びその運転方法 |
JP2017228626A (ja) | 2016-06-22 | 2017-12-28 | 株式会社日立ハイテクノロジーズ | 真空処理装置およびその運転方法 |
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JP2019169583A (ja) | 2019-10-03 |
US20190295871A1 (en) | 2019-09-26 |
US20220051917A1 (en) | 2022-02-17 |
TW201941344A (zh) | 2019-10-16 |
KR102131664B1 (ko) | 2020-07-08 |
US11195733B2 (en) | 2021-12-07 |
KR20190111738A (ko) | 2019-10-02 |
TWI695448B (zh) | 2020-06-01 |
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